IPM packaging structure and packaging method for partition temperature control

Abstract

The invention discloses an IPM packaging structure and packaging method for zoning temperature control, a heat insulation layer is located on a metal bottom plate, the area where an AMB substrate is located and the area where an HDI substrate for installing components is located are effectively isolated in the aspect of heat conduction, and the temperature stability of different functional areas in the whole packaging structure is improved. The peripheries of the AMB substrate and the SiC chip are filled with the colloid, so that the chip and the connection part of the chip and the substrate can be physically protected. The metal cover plate covers the whole structure, provides physical protection for the HDI substrate, the components and the colloid in the structure, and provides a top heat dissipation channel at the same time. And the HDI substrate is connected with the AMB substrate, so that effective transmission of signals among different functional areas is ensured, and the whole packaging structure can work coordinately and stably as a whole.

Description

Technical Field

[0001] The invention belongs to the technical field of hybrid integrated circuits and relates to an IPM packaging structure and a packaging method for zoned temperature control. Background Art

[0002] In recent years, the field of power electronics has developed towards high power, high density and high integration. There are more and more application requirements for integrating power semiconductor devices with protection / driving circuits. To solve this problem, the application of new semiconductor materials in power electronic devices has begun to attract more and more attention. With the advancement of semiconductor technology, the emergence and application of a new type of power device - Intelligent Power Module (Intelligent Power Module) has played a more important role in solving such problems.

[0003] As a core component of electronic equipment, the stability and reliability of IPM performance are crucial to the operation of the overall system. How to solve the heat dissipation problem of high-power semiconductor devices and ensure the normal operation of protection / driving circuits in ultra-high temperature environments have become key challenges for the long-term, efficient and stable operation of IPM.

[0004] The traditional IPM packaging structure usually adopts a single heat dissipation method, such as natural heat dissipation or forced air cooling. Although this method can meet the heat dissipation requirements of the module to a certain extent, the heat dissipation performance inside the module will still be affected in ultra-high temperature environments, resulting in excessively high temperatures inside the module, thus affecting its stability and reliability. In addition, the traditional packaging structure also has certain limitations in temperature control, especially in harsh working environments such as high temperature and high humidity, where it is impossible to achieve accurate zone temperature control, thus limiting the performance of the module in different application scenarios. There are two parts in the IPM module: the control area and the power area. The SiC MOSFET used in the power area has a junction temperature of up to 300°C, requiring this chip to maintain a high temperature of 215°C when working; but the control area is all silicon-based chips, and due to the process, the maximum junction temperature of the silicon-based chip is 150°C; therefore, when the two partitions work at the same time, the chip in the control area cannot be used in a high temperature environment of 215°C, which will directly lead to the risk of failure of the chip in the control area. Summary of the invention

[0005] The purpose of the present invention is to provide an IPM packaging structure and packaging method for zoned temperature control, so as to solve the need for heat zone control of high and low temperature zones inside such IPM modules, so that high temperature devices and ordinary silicon-based chips can work normally under specific ultra-high temperature application conditions.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] The present invention proposes an IPM packaging structure for zoned temperature control, comprising a metal cover plate, an AMB substrate and a heat insulation layer packaged on a metal bottom plate;

[0008] A SiC chip is mounted on the AMB substrate, and the AMB substrate and the SiC chip are encapsulated with colloid; an HDI substrate for mounting components is provided above the thermal insulation layer, and the metal cover is arranged above the HDI substrate, components and colloid;

[0009] The HDI substrate is connected to the AMB substrate, and the AMB substrate is connected to the SiC chip.

[0010] Preferably, a first plastic shell is provided at one end of the metal bottom plate, and a second plastic shell is provided at the other end of the metal bottom plate, and the tops of the first plastic shell and the second plastic shell are both in contact with the lower end surface of the metal cover plate.

[0011] Preferably, a copper strip lead-out terminal is provided on the first plastic housing, and a control line lead-out terminal is provided on the second plastic housing;

[0012] The HDI substrate and the control line lead-out terminal, the AMB substrate and the copper tape lead-out terminal, the HDI substrate and the AMB substrate, and the AMB substrate and the SiC chip are all connected via aluminum bonding wires.

[0013] Preferably, there are a plurality of SiC chips, and the plurality of SiC chips are arranged on the AMB substrate.

[0014] Preferably, some components are soldered on the HDI substrate using lead-tin solder.

[0015] Preferably, the metal base plate and the heat insulation layer are bonded with adhesive.

[0016] Preferably, the HDI substrate and the metal cover plate are bonded with thermally conductive adhesive.

[0017] Preferably, a plastic encapsulation resin is provided outside some components.

[0018] Preferably, the SiC chip and the AMB substrate, and the AMB substrate and the metal base plate are bonded by sintered silver, and external signals are led out by bonding.

[0019] The present invention provides a packaging method for an IPM packaging structure for zoned temperature control, comprising:

[0020] The AMB substrate and the heat insulation layer are arranged on the packaging position of the metal base plate;

[0021] The SiC chip is placed on the AMB substrate, and the colloid is used to encapsulate the SiC chip and the AMB substrate;

[0022] Place the HDI substrate on the thermal insulation layer and accurately mount the components on the HDI substrate;

[0023] Connecting HDI substrate and AMB substrate, and AMB substrate and SiC chip;

[0024] The metal cover is placed above the HDI substrate, components and colloid to complete the IPM packaging.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The present invention proposes an IPM packaging structure for zoned temperature control, in which the heat insulation layer is located on the metal bottom plate, and the area where the AMB substrate is located and the area where the HDI substrate where the components are installed are effectively isolated in terms of heat conduction. The heat generated by the SiC chip when working is mainly conducted through the heat dissipation path in the vertical direction of the AMB substrate, while the environment where the components on the HDI substrate are located is less affected by the heating of the SiC chip, which to a certain extent avoids the high temperature of the power zone being conducted through the metal bottom plate to exceed the maximum temperature control range of the control zone, thereby improving the temperature stability of different functional areas in the entire packaging structure. Through the structure of zoned temperature control, the components of the SiC chip that generate more heat under high power operation can work stably in the area with better heat dissipation conditions; and various components on the HDI substrate can operate in an environment with relatively low temperature and small temperature fluctuation, reducing the risks of performance degradation and failure caused by temperature factors, and ensuring that each component can perform at its best performance. At the same time, the HDI substrate and the AMB substrate are connected by bonding wires, which realizes the effective transmission of signals between different functional areas of the power zone and the control zone, and ensures that the entire packaging structure can work in a coordinated and stable manner as a whole. Furthermore, in order to meet the requirements of high-temperature resistant assembly, a planar structure that is more suitable for high-temperature resistant assembly was selected, and the two SiC chips were placed side by side on the left and right instead of being stacked up and down. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 It is a packaging diagram of the IPM packaging structure for zoned temperature control of the present invention.

[0029] Among them: 1-metal base plate, 2-AMB substrate, 3-thermal insulation layer, 4-SiC chip, 5-colloid, 6-HDI substrate, 7-first plastic shell, 8-lead-tin material, 9-adhesive, 10-metal cover plate, 11-thermal conductive adhesive, 12-plastic-sealed branches, 13-second plastic shell, 14-copper tape lead-out terminal, 15-control line lead-out terminal, 16-aluminum bonding wire. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0033] In the description of the embodiments of the present invention, it should be noted that if the terms "upper", "lower", "horizontal", "inner", etc. indicate an orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the invention is usually placed when in use, it is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0034] In addition, if the term "horizontal" appears, it does not mean that the component must be absolutely horizontal, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", which does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0035] In the description of the embodiments of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal connection of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] The present invention is further described in detail below in conjunction with the accompanying drawings:

[0037] The present invention proposes a new type of high-temperature resistant IPM packaging structure from the aspects of adopting efficient heat dissipation materials and optimizing heat dissipation structures. The structure is characterized in that: in the same module, different temperature controls can be achieved on both sides of the module, one side is the power area: including SiC MOSFET, ceramic substrate (AMB), etc. The power area is connected to strong electricity, and the SiC MOS needs to be kept at a high temperature of 215°C, and the area needs to be heat-dissipated; the other side is the control area: including drivers, chips, etc. The control area is connected to weak electricity, and the area needs to be insulated to isolate the heat from the power area; at the same time, a heat sink is installed above the device to achieve the purpose of heat dissipation of the chip with a large heat flux density in the control area, and a heat-insulating material can be set in the middle area of ​​the module to isolate the heat conduction in the high-temperature area to achieve a better temperature control effect, which is specifically described as follows:

[0038] The present invention proposes an IPM packaging structure for zone temperature control, such as Figure 1 As shown, it includes a special-shaped metal cover plate 10 and an AMB substrate 2 and a thermal insulation layer 3 packaged on a metal base plate 1; a SiC chip 4 is mounted on the AMB substrate 2, and the AMB substrate 2 and the SiC chip 4 are potted with a colloid 5; an HDI substrate 6 for mounting components is provided above the thermal insulation layer 3, and the metal cover plate 10 is arranged above the HDI substrate 6, the components and the colloid 5; the HDI substrate 6 is connected to the AMB substrate 2, and the AMB substrate 2 is connected to the SiC chip 4.

[0039] A first plastic shell 7 is provided at one end of the metal bottom plate 1, and a second plastic shell 13 is provided at the other end of the metal bottom plate 1. The tops of the first plastic shell 7 and the second plastic shell 13 are both in contact with the lower end surface of the metal cover plate 10. A copper strip lead-out terminal 14 is provided on the first plastic shell 7, and a control line lead-out terminal 15 is provided on the second plastic shell 13; the HDI substrate 6 and the control line lead-out terminal 15, the AMB substrate 2 and the copper strip lead-out terminal 14, the HDI substrate 6 and the AMB substrate 2, and the AMB substrate 2 and the SiC chip 4 are all connected through aluminum bonding wires 16, and the signals of each part are transmitted using the aluminum bonding wires 16.

[0040] Some components in the control area are soldered on the HDI substrate 6 using lead-tin solder 8. Lead-tin solder 8 has good conductivity, which can ensure reliable electrical connection between components and HDI substrate 6, so that current can be smoothly transmitted between components and substrate, and plays a key role in realizing the complex circuit functions of the entire IPM packaging structure, ensuring accurate signal transmission and normal power conversion. The connection points formed by welding have a certain mechanical strength, which can make the components firmly attached to the HDI substrate 6. Even under the working conditions where the packaging structure is subjected to a certain degree of vibration, impact or thermal stress changes, it can effectively prevent the components from loosening, falling off, etc., and ensure the stability and long-term reliability of the entire circuit system.

[0041] The thermal insulation layer 3 disposed under the HDI substrate 6 is a thermal insulation solution designed specifically for high-performance electronic components. It has an extremely low thermal conductivity of approximately 0.001 W / (m·K), which can effectively isolate heat transfer and ensure that the temperature of the control area is not affected by the power area. The thermal insulation layer has excellent thermal stability and chemical inertness, and can withstand extreme working environments while maintaining long-term reliability and durability. In addition, the thermal insulation layer also has good mechanical strength and processing performance, providing efficient and reliable thermal insulation protection for high-temperature, high-power modules.

[0042] The metal base plate 1 and the thermal insulation layer 3 are bonded with a high temperature resistant adhesive 9. The high temperature resistant adhesive 9 can maintain good bonding performance under high temperature conditions, ensure that the metal base plate 1 and the thermal insulation layer 3 are tightly connected, and will not cause the adhesive layer to fail or debond due to high temperature, so that the thermal insulation layer 3 can exert a strong and effective thermal insulation effect to a large extent, isolating the heat conducted from the power area through the metal base plate. The adhesive itself has a certain elasticity and flexibility. When the packaging structure is subjected to external mechanical stress or internal thermal stress changes, it can buffer and disperse the mechanical stress to a certain extent, avoid stress concentration at the connection between the metal base plate 1 and the thermal insulation layer 3, reduce the risk of structural damage caused by excessive stress, and enhance the mechanical stability and reliability of the entire packaging structure.

[0043] The metal cover covers the entire structure, providing physical protection for the internal substrate, components, etc., and protecting the internal precision components and electrical connections. At the same time, the metal cover helps conduct the heat inside the package structure to the top heat sink and the external environment, further optimizing the heat dissipation performance of the entire package structure and ensuring that each component works within the appropriate temperature range.

[0044] The HDI substrate 6 and the metal cover plate 10 are bonded to the special-shaped part of the control area by a thermally conductive adhesive 11. The thermally conductive adhesive 11 not only plays a bonding role, but also has good thermal conductivity. When the IPM packaging structure is working, the heat generated by the internal components can be conducted to the metal cover plate 10 through the thermally conductive adhesive 11. With the help of the good heat dissipation characteristics of the metal cover plate 10, the heat is conducted to the external environment, thereby effectively improving the heat dissipation efficiency of the entire packaging structure, ensuring that each component can work stably within a suitable temperature range and extend its service life; at the same time, it also helps to maintain the reliability of the entire module. A plastic encapsulation resin 12 is provided on the outside of some components. The plastic encapsulation resin 12 is wrapped around the outside of the component in the form of a plastic seal to protect the chip from mechanical damage and environmental influences, and can also play a role in improving the electrical and thermal properties of the chip.

[0045] The SiC chip 4 and the AMB substrate 2, as well as the AMB substrate 2 and the metal base plate 1 are bonded by sintered silver 17, and external signals are led out by bonding. Sintered silver 17 has excellent thermal conductivity, and forms a good heat conduction channel between the SiC chip 4 and the AMB substrate 2, and between the AMB substrate 2 and the metal base plate 1, which helps to maintain the temperature balance inside the entire packaging structure, improve the overall heat dissipation effect and thermal management capabilities, and is crucial to ensure the reliability of the IPM packaging structure in high-power application scenarios. At the same time, sintered silver is suitable for high-power module environments brought about by high current and high voltage. When the module is running at high power, the SiC chip needs to operate under high temperature conditions of 215°C. Sintered silver 17 can maintain stable performance under high temperature and high power conditions, which better meets the needs of high temperature and high power application fields of this zoned temperature-controlled IPM packaging structure.

[0046] The silicone gel 5 exhibits good flexibility and compliance due to its soft texture and low Young's modulus. Its large thermal expansion coefficient combined with low thermal stress level can effectively alleviate the mechanical stress caused by temperature changes, thereby protecting fragile bonding points from the risk of pulling and breaking; at the same time, it can also effectively isolate the potential damage to the chip coating from the external environment and provide an additional buffer layer for the chip; especially in modules that require high-precision and high-reliability protection, silicone gel can further enhance the reliability of the package, and its advantages are particularly prominent.

[0047] Preferably, there are a plurality of SiC chips 4 , and the plurality of SiC chips 4 are arranged on the AMB substrate 2 .

[0048] The present invention provides a packaging method for an IPM packaging structure for zoned temperature control, comprising the following steps:

[0049] The AMB substrate 2 and the heat insulation layer 3 are respectively arranged on the packaging position of the metal base plate 1 by means of sintered silver 17 and bonding 9;

[0050] The SiC chip 4 is placed on the AMB substrate 2, and the colloid 5 is used to encapsulate the SiC chip 4 and the AMB substrate 2;

[0051] The HDI substrate 6 is placed on the heat insulation layer 3, and various components in the control area are accurately mounted on the HDI substrate 6;

[0052] Connecting the HDI substrate 6 and the AMB substrate 2, and the AMB substrate 2 and the SiC chip 4;

[0053] The special-shaped metal cover plate 10 is arranged above the HDI substrate 6, the components and the colloid 5, and assembled with the plastic housing to complete the packaging of the IPM.

[0054] The present invention achieves precise control of the inside of the module and ensures stable operation of the module at high power density by optimizing the heat dissipation structure, introducing an intelligent temperature monitoring system and adopting a partition design strategy.

[0055] (1) Optimization of heat dissipation structure

[0056] To further improve the heat dissipation capability, heat sinks are mounted on the top and bottom of the module to form a double heat sink structure. This design effectively reduces the temperature of the chip with high heat density in the control area, and significantly enhances the heat dissipation performance of the module by optimizing the heat dissipation path. In addition, heat pipe technology, liquid cooling technology and other heat dissipation solutions can be considered to meet the heat dissipation requirements in different application scenarios.

[0057] (2) Temperature monitoring system

[0058] By introducing a high-precision temperature sensor to monitor the temperature of the power partition inside the module in real time, the temperature signal is output to the host computer to achieve real-time monitoring of the temperature. The system integrates the power switch device and the drive / protection circuit together, and has an overheat protection inside, which can quickly respond to temperature changes. Through the overheat fault detection circuit, the fault information is sent to the CPU for processing. At the same time, the system also has fault warning and self-protection functions, which can automatically cut off the power supply under abnormal conditions to ensure the safe and stable operation of the module.

[0059] (3) Partition design

[0060] Since the power conversion part of the module has a local high temperature, in order to avoid affecting the driver part, it is necessary to meet the design requirements of the dual temperature zone:

[0061] The power zone uses key high-power components such as SiC MOSFET. The power zone is connected to strong electricity and needs to make SiC MOS run stably at a high temperature of 215°C. In order to meet the needs of high-temperature resistant assembly, the module chooses a planar structure that is more suitable for high-temperature resistant assembly. The SiC chip is placed side by side on the left and right instead of stacked up and down. The SiC chip is mounted on the AMB substrate through sintered silver, and the external signal is led out by bonding. The sintered silver is used for electrical interconnection and thermal interconnection bonding of the high-temperature part. The power zone is filled with silicone gel to protect the chip and aluminum bonding wire. The metal cover plate has the functions of thermal conductivity and shell packaging, and the vertical thermal conductivity of the substrate is increased by embedding thick copper on the AMB substrate. These designs enhance the heat dissipation performance of the SiC chip, and also improve the stability and reliability of the entire power zone.

[0062] The control area contains components such as drivers and Si chips, and the control area is connected to weak current. In addition, the components are soldered on the HDI substrate using mature lead-tin solder. The control area needs to be insulated here to isolate the heat from the power area. Therefore, an insulation layer with a very high insulation coefficient is placed under the HDI substrate to isolate the high temperature environment generated by the heat in the power area. By optimizing the insulation material and the method, the vertical heat conduction is greatly reduced. In addition, the longitudinal thermal conductivity of the HDI substrate is low, which can largely avoid the significant increase in the temperature of the control area due to overheating of the SiC chip. In order to achieve a better temperature control effect, an insulation material with extremely low thermal conductivity can be set in the middle area between the module control area and the insulation area to further block the heat conduction in the high temperature area.

[0063] Therefore, the packaging structure proposed by the present invention can solve the need for heat zoning control of high and low temperature zones within such IPM modules, so that both high-temperature devices and ordinary silicon-based chips can work normally under specific application conditions exceeding 150°C. It has the following advantages:

[0064] 1) As a new type of module packaging structure, the packaging structure is reasonably designed. Through the multi-zone layout in the package body, the module can simultaneously dissipate heat for power devices and insulate heat for control devices in a high-temperature environment, solving the technical problem of how to coexist high-temperature power areas and low-temperature control areas in the same module and realize zoned temperature control;

[0065] 2) This new packaging structure can be used in high temperature applications exceeding 150°C, and can ensure that all devices can work normally in high temperature environments. By adopting this packaging structure, not only can the stability and reliability of the IPM module be improved, but also the failure rate and maintenance cost of the system can be reduced.

[0066] 3) The service life and reliability of the IPM module in high temperature environments are improved. This module is a general module that can be widely used in power inverters, servo drives and other systems. The current application scenarios are mainly airborne, vehicle-mounted, and ground equipment. It is suitable for power electronics, communications, aerospace, aviation and other fields. It has important theoretical significance and practical value for the research and development of high-reliability and high-temperature resistant packaging structures.

[0067] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An IPM packaging structure for zone temperature control, characterized in that: It comprises a metal cover plate (10), an AMB substrate (2) and a heat insulation layer (3) which are packaged on a metal bottom plate (1); A SiC chip (4) is mounted on the AMB substrate (2), and the AMB substrate (2) and the SiC chip (4) are potted with a colloid (5); an HDI substrate (6) for mounting components is provided above the thermal insulation layer (3), and the metal cover plate (10) is arranged above the HDI substrate (6), the components and the colloid (5); The HDI substrate (6) is connected to the AMB substrate (2), and the AMB substrate (2) is connected to the SiC chip (4).

2. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: A first plastic shell (7) is provided at one end of the metal bottom plate (1), and a second plastic shell (13) is provided at the other end of the metal bottom plate (1), wherein the tops of the first plastic shell (7) and the second plastic shell (13) are both in contact with the lower end surface of the metal cover plate (10).

3. The IPM packaging structure for zoned temperature control according to claim 2, characterized in that: A copper strip lead-out terminal (14) is provided on the first plastic housing (7), and a control line lead-out terminal (15) is provided on the second plastic housing (13); The HDI substrate (6) and the control line lead-out terminal (15), the AMB substrate (2) and the copper strip lead-out terminal (14), the HDI substrate (6) and the AMB substrate (2), and the AMB substrate (2) and the SiC chip (4) are all connected via aluminum bonding wires (16).

4. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: There are a plurality of SiC chips (4), and the plurality of SiC chips (4) are arranged on the AMB substrate (2).

5. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: Some components are soldered onto the HDI substrate (6) using lead-tin solder (8).

6. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: The metal bottom plate (1) and the heat insulation layer (3) are bonded together using adhesive (9).

7. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: The HDI substrate (6) and the metal cover plate (10) are bonded together using a heat-conducting adhesive (11).

8. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: Plastic encapsulation resin (12) is provided outside some components.

9. The IPM packaging structure for zone temperature control according to claim 1, characterized in that: The SiC chip (4) and the AMB substrate (2), as well as the AMB substrate (2) and the metal base plate (1) are bonded via sintered silver (17), and external signals are led out via bonding.

10. A packaging method for an IPM packaging structure for zone temperature control, characterized in that: The IPM packaging structure for zone temperature control according to any one of claims 1 to 9 comprises: The AMB substrate (2) and the heat insulation layer (3) are arranged on the packaging position of the metal bottom plate (1); The SiC chip (4) is placed on the AMB substrate (2), and the colloid (5) is used to encapsulate the SiC chip (4) and the AMB substrate (2); Arranging the HDI substrate (6) on the heat insulation layer (3), and accurately mounting components on the HDI substrate (6); Connecting the HDI substrate (6) and the AMB substrate (2), and the AMB substrate (2) and the SiC chip (4); The metal cover plate (10) is arranged above the HDI substrate (6), components and colloid (5) to complete the packaging of the IPM.

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