Semiconductor device

Abstract

According to one embodiment, there is provided a semiconductor device including a semiconductor element including a first electrode and a second electrode opposed to the first electrode in a first direction. The first conductor includes: a first portion facing the first electrode in the first direction; and a second portion at least partially spaced apart from and opposed to the first portion in the first direction. The first fixing member is provided between the first electrode and the first portion and between the first portion and the second portion in a space in the first direction.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based upon and claims the benefit of priority from Japanese patent application No. 2023-173732, filed on October 5, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments described herein generally relate to semiconductor devices. Background Art

[0004] For example, a metal member called a lead frame or a connector is used in a structure for electrically connecting an electrode of a semiconductor element to the outside of a semiconductor package. The metal member and the semiconductor element are electrically connected by solder or the like. Summary of the invention

[0005] The semiconductor device of this embodiment has:

[0006] Lead frame;

[0007] Semiconductor components, including:

[0008] a first electrode, and

[0009] A second electrode, electrically connected to the lead frame, and disposed on a surface opposite to the first electrode in a first direction;

[0010] A first conductor comprises:

[0011] a first portion, which is opposite to the first electrode in the first direction, and

[0012] a second portion at least partially spaced apart from the first portion in the first direction and opposite to the first portion; and

[0013] The first fixing member is disposed between the first electrode and the first portion and between the first portion and the second portion in the first direction.

[0014] According to this embodiment, a semiconductor device capable of suppressing a short circuit can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1A is a top view of the semiconductor device 1 according to the first embodiment.

[0016] Figure 1B is a perspective view of the semiconductor device 1 according to the first embodiment.

[0017] Figure 2 It is along Figure 1A A cross-sectional view taken along line AA' is shown.

[0018] Figure 3A is a cross-sectional view taken along line AA′ of the semiconductor device 2 according to the second embodiment.

[0019] Figure 3B is a cross-sectional view taken along line AA′ of the semiconductor device 2 according to the second embodiment.

[0020] Figure 4 is a cross-sectional view taken along line AA′ of the semiconductor device 3 according to the third embodiment.

[0021] Figure 5 is a cross-sectional view taken along line AA′ of a modification of the semiconductor device 3 according to the third embodiment.

[0022] Figure 6 is a cross-sectional view taken along line AA′ of the semiconductor device 4 according to the fourth embodiment.

[0023] Figure 7 Yes means Figure 5 The B-B' section shown or Figure 6 A cross-sectional view of the CC' section is shown.

[0024] Figure 8 Yes means Figure 5 The B-B' section shown or Figure 6 A cross-sectional view of the CC' section is shown.

[0025] Fig. 9 Yes means Figure 5 The B-B' section shown or Figure 6 A cross-sectional view of the CC' section is shown.

[0026] Fig.10 is a cross-sectional view taken along line AA′ of the semiconductor device 5 according to the fifth embodiment.

[0027] Fig.11 is a cross-sectional view taken along line AA′ of the semiconductor device 6 according to the sixth embodiment.

[0028] Fig.12 is a cross-sectional view taken along line AA′ of a semiconductor device 7 according to the seventh embodiment.

[0029] Fig.13 is a cross-sectional view taken along line AA′ of a modification of the semiconductor device 7 according to the seventh embodiment. DETAILED DESCRIPTION

[0030] The embodiment provides a semiconductor device capable of preventing a short circuit.

[0031] In general, according to one embodiment, a semiconductor device is provided, which includes a semiconductor element, the semiconductor element including a first electrode and a second electrode opposite to the first electrode in a first direction. The first conductor includes: a first portion opposite to the first electrode in the first direction; and a second portion at least partially separated from the first portion in the first direction and opposite to the first portion. A first fixing member is disposed between the first electrode and the first portion and between the first portion and the second portion.

[0032] According to another embodiment, a semiconductor device is provided, which includes a semiconductor element including a first electrode and a second electrode opposite to the first electrode in a first direction. The second conductor includes: a fifth portion opposite to the first electrode in the first direction; and a sixth portion spaced apart from the fifth portion in the first direction and opposite to the fifth portion. The third conductor includes: a seventh portion disposed between the fifth portion and the sixth portion and at least partially in contact with the fifth portion and the sixth portion; and an eighth portion formed continuously with the seventh portion and spaced apart from the fifth portion in the first direction. The first fixing member is disposed between the first electrode and the fifth portion, and at least partially between the fifth portion and the eighth portion.

[0033] Embodiments of the present disclosure will be described below with reference to the accompanying drawings.

[0034] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between each part, etc. are not necessarily the same as the actual. Even when the same part is shown, the size and ratio of each part may be different depending on the drawings.

[0035] For example, in the cross-sectional views shown in the specification of the present application, some stacked structures are shown, but the thickness ratio of the layers in the stacked structure is not necessarily the same as the actual thickness ratio. Even when one layer is shown as thicker than another layer in a cross-sectional view, the thickness of the layer and the other layer may actually be approximately the same, or one layer may be thinner than the other layer. That is, the dimensions such as thickness shown in the drawings of the present specification may be different from the actual dimensions.

[0036] The direction from the second electrode 22 to the first electrode 21 is the Z direction (first direction). The direction intersecting the Z direction is the X direction (second direction), and the direction intersecting the X and Z directions is the Y direction (third direction). Figure 2 The semiconductor device 1 shown is a cross-sectional view in the XZ plane. In the embodiment, the X, Y and Z directions are shown as being orthogonal to each other, but are not limited to being orthogonal to each other, and may be mutually intersecting. For ease of description, the positive direction of the Z direction is referred to as "up" and the negative direction of the Z direction is referred to as "down". However, the directions of "up" and "down" are not limited to the direction of gravity or the direction when the semiconductor device is installed.

[0037] In the present specification and each drawing, elements similar to those previously described with reference to the already mentioned drawings are given the same reference numerals, and detailed description thereof is appropriately omitted.

[0038] First embodiment

[0039] Figure 1A is a plan view showing the semiconductor device 1 according to the first embodiment. Figure 1B is a perspective view showing a semiconductor device 1 according to the first embodiment. Figure 2 It is along Figure 1A First, the reference Figure 1A and 1B The semiconductor device 1 will be briefly described.

[0040] like Figure 1A As shown, the semiconductor device 1 is sealed by a resin portion 50. A portion of the lead frame 10 or the first conductor 11 protrudes from the resin portion 50 for electrical connection to the outside. The resin portion 50 is, for example, a sealing resin containing epoxy resin. The lead frame 10 and the first conductor 11 are formed of, for example, a metal containing copper (Cu).

[0041] Figure 1A An example is shown in which four protruding portions of the lead frame 10 are provided on the first side surface 50c of the resin portion 50, and four first conductors 11 are provided on the second side surface 50d opposite to the first side surface 50c in the X direction. The number and shape of the protruding portions of the first conductors 11 or the lead frame 10 are not limited to Figure 1A For example, three or less or five or more protrusions of the first conductor 11 or the lead frame 10 may be provided on the second side surface 50d or the first side surface 50c of the resin portion 50, respectively. In addition, for example, the protrusions of the first conductor 11 or the lead frame 10 may be provided on the lower surface 50b of the resin portion 50 that is opposite to the upper surface 50a in the Z direction, or may be provided over the lower surface 50b and the first side surface 50c or the second side surface 50d.

[0042] Each protrusion of the lead frame 10 of each first conductor 11 is electrically connected to a Figure 2 The semiconductor element 20 shown in FIG. Figure 1A In FIG. 1 , the semiconductor element 20 is covered by the resin portion 50 and is not shown. The lead frame 10 is connected to, for example, a drain electrode of the semiconductor element 20. The first conductor 11 is connected to, for example, a source electrode of the semiconductor element 20.

[0043] A portion of the first conductor 11 protruding from the second side surface 50d may be connected to, for example, a gate electrode of the semiconductor element 20. Figure 1AAmong the plurality of first conductors 11 shown, a portion of the first conductors 11 may be connected to the source electrode, and a portion of the first conductors 11 may be connected to the gate electrode. The portion of the first conductor 11 connected to the source electrode and the portion connected to the gate electrode are electrically insulated.

[0044] like Figure 1B As shown, a portion of the lead frame 10 and a portion of the first conductor 11 protrude from the resin portion 50 and are used for electrical connection with the outside. The portions of the lead frame 10 and the first conductor 11 protruding from the resin portion 50 are referred to as terminals. The shape of each terminal is not limited to Figure 1B The shape shown in the figure may be, for example, a gull-wing type or a J-type. The gull-wing type is a shape in which a terminal extending in the X direction has a portion that is differently positioned in the Z direction. That is, a step is provided so that the position in the Z direction becomes lower toward the head end of the terminal.

[0045] Meanwhile, the J-type is a shape in which, for example, the terminal of the first conductor 11 is bent toward the negative direction of the Z direction in the XZ plane, and the head end of the terminal faces the negative direction of the X direction. Figure 1A and 1B The appearance of the semiconductor device 1 is described.

[0046] Next, we will refer to Figure 2 The internal wiring structure of the semiconductor device 1 will be described in detail.

[0047] Figure 2 It is along Figure 1A The cross-sectional view is taken along the line AA' shown in FIG. Figure 2 As shown, the semiconductor device 1 according to the first embodiment includes a lead frame 10, a first conductor 11, a semiconductor element 20, a first fixing member 31, a second fixing member 32, an insulator 40, and a resin portion 50. The first conductor 11 has a first portion 11a and a second portion 11b.

[0048] The semiconductor element 20 includes a first electrode 21 and a second electrode 22. The second electrode 22 is provided on a surface opposite to the first electrode 21 in the Z direction. The first electrode 21 and the second electrode 22 are formed of a metal containing nickel (Ni), for example, and are coated with gold (Au). The semiconductor element 20 is, for example, a MOSFET. The first electrode 21 is, for example, a source electrode. The second electrode 22 is, for example, a drain electrode.

[0049] The semiconductor element 20 may be further provided with a gate electrode (not shown) in addition to the first electrode 21 as a source electrode and the second electrode 22 as a drain electrode. The gate electrode is formed on the same surface of the semiconductor element 20 as the surface on which the first electrode 21 is provided, and is separated from the first electrode 21. For example, the gate electrode is electrically connected to the outside through a different conductor separated from the first conductor 11 or through wire bonding, etc. The gate electrode is electrically insulated from the first electrode 21, and different voltages can be applied to the gate electrode.

[0050] The first portion 11a is opposed to the first electrode 21 of the semiconductor element 20 in the Z direction. The first portion 11a has a first surface F11 which is a surface opposite to the surface opposed to the first electrode 21. The second portion 11b has a second surface F12 which is spaced apart from the first surface F11 in the Z direction and is opposed to the first surface F11.

[0051] The first conductor 11 has a connection portion Pc1 between the first portion 11a and the second portion 11b. The first portion 11a and the second portion 11b are connected by the connection portion Pc1. The first portion 11a and the second portion 11b may be integrally formed by a single conductive structure. Here, the integrally formed structure means a seamless structure without the intervention of solder. For example, the first portion 11a and the second portion 11b can be formed by bending the first conductor 11. For example, the first conductor 11 can be formed by bending the first conductor 11 in the XZ plane. Figure 2 The structure of the first conductor 11 is shown in FIG. The first conductor 11 may have Figure 2 Here, the connection portion Pc1 represents a curved structure connecting the first portion 11a and the second portion 11b extending in a direction intersecting the Z axis, so that the first portion 11a and the second portion 11b are at least partially separated and opposed to each other in the Z direction. However, the structure of the first conductor 11 is not limited to Figure 2 The structure shown, for example, the first portion 11 a and the second portion 11 b may be formed by bending the first conductor 11 in the YZ plane.

[0052] The first fixing member 31 is disposed between the first electrode 21 and the first conductor 11. The first fixing member 31 is also at least partially disposed between the first face F11 and the second face F12 of the first conductor 11. For example, the first fixing member 31 electrically connects at least a portion of the first face F11 and the second face F12 spaced apart in the Z direction. The first fixing member 31 may be in contact with the first face F11 but not in contact with the second face F12. However, in order to reduce resistance, it is preferable that the first fixing member 31 is in contact with the first face F11 and the second face F12, and the first face F11 and the second face F12 are electrically connected to each other. The first electrode 21, the first fixing member 31, the first portion 11a of the first conductor 11, the first fixing member 31, and the second portion 11b of the first conductor 11 are sequentially disposed in the Z direction. The first fixing member electrically connects the first electrode and the conductor.

[0053] For example, the first fixing member 31 extends continuously from the first electrode 21 to between the first face F11 and the second face F12. For example, the first fixing member 31 provided on the first electrode 21 is melted and introduced as a melt flow between the first face F11 and the second face F12, thereby forming the first fixing member 31. The shape of the first fixing member 31 may be, for example, Figure 2 The continuous shape surrounding the first portion 11 a is shown, or may be a shape remaining only on the first electrode 21 and the first face F11 .

[0054] For example, in the manufacturing process, after the melted first fixing member 31 reaches the first surface F11 in a continuous shape surrounding the first part 11a, the first fixing member 31 is sucked between the first part 11a and the second part 11b, which may cause the first fixing member 31 to be discontinuously formed on the first electrode 21 and the first surface F11.

[0055] The second fixing member 32 electrically connects the second electrode 22 and the lead frame 10. The second fixing member 32 may be formed of the same material as the first fixing member 31. For example, the first fixing member 31 and the second fixing member 32 are solder.

[0056] The first conductor 11 has a protruding portion 11p protruding from the resin portion 50. The second portion 11b of the first conductor 11 and the protruding portion 11p are connected via, for example, a connecting portion 11g, and together with the first portion 11a, form the first conductor 11. Figure 2 In the embodiment, the first conductor 11 includes a first portion 11a, a second portion 11b, a connection portion 11g, and a protruding portion 11p. The first portion 11a, the second portion 11b, and the protruding portion 11p are formed of, for example, a metal containing Cu, and the connection portion 11g is, for example, solder.

[0057] The protrusion 11p is made of, for example, the same material as the lead frame 10. For example, the protrusion 11p is cut from the lead frame 10 and bent to have a Figure 2 The structure shown.

[0058] For example, the portion from the second portion 11b to the protrusion 11p of the first conductor 11 may be integrally formed by a single conductive structure. That is, the second portion 11b and the protrusion 11p may be continuously formed without providing the connecting portion 11g. The second portion 11b and the protrusion 11p may be formed by bending the first conductor 11 as a continuous member. Therefore, the first conductor 11 may also have at least the first portion 11a, the second portion 11b, and the protrusion 11p.

[0059] The insulator 40 is provided on at least a portion of the first electrode 21 of the semiconductor element 20. The insulator 40 covers, for example, at least a portion of the outer edge of the first electrode 21. Here, the outer edge is the outer peripheral portion of the first electrode 21 projected in the Z direction. The insulator 40 is made of, for example, polyimide. The insulator 40 can protect the first electrode 21 from moisture and the like that cannot be prevented by the resin portion 50.

[0060] Except for a part of the lead frame 10 and the first conductor 11, the rest of the lead frame 10 and the first conductor 11 are sealed by the resin portion 50. The resin portion 50 is, for example, a sealing resin and may include epoxy resin. The portion of the lead frame 10 and the first conductor 11 that is not sealed by the resin portion 50 is used as a terminal as shown in FIG. 1 for electrical connection with the outside.

[0061] The distance D1 between the first surface F11 and the second surface F12 in the Z direction is, for example, 30 μm or less. The thickness D2 of the first fixing member 31 provided between the first electrode 21 and the first portion 11 a in the Z direction is, for example, 30 μm or less. Figure 2 The shapes and sizes shown are for the convenience of explanation, and the size relationship between D1 and D2 is not limited to the sizes shown in the figure. For example, D1 is substantially the same as D2 or smaller than D2.

[0062] Since the purpose of the first fixing member 31 is to connect the first electrode 21 and the first portion 11a, it is preferable to provide the first fixing member 31 neither more nor less between the first electrode 21 and the first portion 11a. By forming D1 to be smaller than D2, the risk of insufficient first fixing member 31 between the first electrode 21 and the first portion 11a can be reduced. This is because when D1 is smaller than D2, sufficient first fixing member 31 can be provided between the first electrode 21 and the first portion 11a.

[0063] The resistance of the first fixing member 31 that electrically connects the first electrode 21 and the first portion 11a decreases as the first fixing member 31 is provided wider on the first electrode 21. That is, it is preferable that the first fixing member 31 is sufficient on the first electrode 21. Therefore, in order to make the connection between the first electrode 21 and the first portion 11a more reliable, it is preferable to set D1 smaller than D2. The first fixing member 31 can be formed between the first face F11 and the second face F12 while preventing obstruction to the electrical connection between the first electrode 21 and the first portion 11a.

[0064] Furthermore, by setting D1 to be small, the first fixing member 31 is formed in the wide portion between the first portion 11a and the second portion 11b. By electrically connecting the first portion 11a and the second portion 11b through the wide portion via the first fixing member 31, the resistance of the semiconductor device 1 can be reduced.

[0065] In order to prevent a short circuit caused by the extra first fixing member 31, D1 needs to have a size greater than a certain value. In order to accommodate the extra first fixing member 31 between the first part 11a and the second part 11b, D1 cannot be too small. That is, it is best to reduce D1 within a range that can accommodate the extra first fixing member 31 between the first part 11a and the second part 11b.

[0066] Hereinafter, an example of connecting the first electrode 21 and the first conductor 11 by the first fixing member 31 will be described while describing the manufacturing process of the semiconductor device 1. The first fixing member 31 is, for example, solder. First, the first fixing member 31 is temporarily fixed to the first electrode 21. Then, the first portion 11a of the first conductor 11 is placed on the first fixing member 31. At this time, the first fixing member 31 is not formed between the first portion 11a and the second portion 11b.

[0067] Next, the temporarily fixed first fixing member 31 is melted in a reflow process. The melted first fixing member 31 connects the first electrode 21 and the first portion 11a. In this reflow process, the melted first fixing member 31 flows between the first portion 11a and the second portion 11b, thereby obtaining Figure 2 The structure shown.

[0068] In the reflow process, the amount of the first fixing member 31 may be greater than the amount that can be accommodated between the first electrode 21 and the first portion 11a. That is, the first fixing member 31 may overflow from between the first electrode 21 and the first portion 11a. The first fixing member 31 overflowing from between the first electrode 21 and the first portion 11a flows between the first portion 11a and the second portion 11b, thereby preventing the first fixing member 31 from flowing out to the second electrode 22 of the semiconductor element 20.

[0069] Referring to Figures 1 and Figure 2 The configuration of the semiconductor device 1 according to the first embodiment is described. The effect of the semiconductor device 1 according to the present embodiment will be described below. In the semiconductor device 1 according to the present embodiment, the first conductor 11 has a first portion 11a and a second portion 11b that are spaced apart from each other and opposed in the Z direction. In the Z direction, there is a space between the first portion 11a and the second portion 11b. The first fixing member 31 is provided on the first electrode 21 and at least a portion between the first portion 11a and the second portion 11b. The first fixing member 31 is provided in the space between the first portion 11a and the second portion 11b. That is, the first fixing member 31 is diffused not only between the first electrode 21 and the first portion 11a, but also between the first portion 11a and the second portion 11b, thereby preventing the first fixing member 31 from overflowing from the first electrode 21 to the second electrode 22.

[0070] When the first electrode 21 is connected to the first conductor 11 by the first fixing member 31, more first fixing members 31 may be provided to prevent an increase in resistance due to poor connection. By providing more first fixing members 31, the gap between the first electrode 21 and the first conductor 11 can be reliably filled with the first fixing members 31 and an electrical connection can be established therebetween. However, for example, in a reflow process in which the temporarily fixed first fixing members 31 are melted, the first fixing members 31 may overflow from between the first electrode 21 and the first conductor 11.

[0071] Even when the first fixing member 31 is redundant as described above, by allowing the first fixing member 32 to spread between the first portion 11a and the second portion 11b, it is possible to prevent the first fixing member 33 from spreading in a direction where there is a risk of short circuit and thus the reliability of the semiconductor device is impaired, for example, in the direction of the second electrode 22 of the semiconductor element 20. A short circuit caused by the first fixing member 31 crossing the insulator 40 and reaching the second electrode 22 of the semiconductor element 20 can be prevented.

[0072] For example, the first portion 11a and the second portion 11b may be provided in the first conductor 11 by bending the first conductor 11. The structure between the second portion 11b and the protrusion 11p is not limited to Figure 2 In other words, the effect of this embodiment can be obtained as long as the first portion 11a and the second portion 11b are spaced apart from each other and face each other in the Z direction. For example, there is no need to change the shapes of the lead frame 10 and the semiconductor element 20. That is, this embodiment can be applied to conductors of various shapes and further to various semiconductor devices.

[0073] The insulator 40 protects the first electrode 21, but the adhesion between the insulator 40 and the first fixing member 31 may not be as good as the adhesion between the first conductor 11 and the first fixing member 31. The first fixing member 31 is, for example, solder, the first conductor 11 is, for example, Cu, and the insulator 40 is, for example, polyimide. In terms of wettability with solder, Cu is better than polyimide. In other words, the adhesion of copper to solder is higher than the adhesion of polyimide to solder.

[0074] Since the adhesion between the insulator 40 and the first fixing member 31 is low, there is a risk that the first fixing member 31 breaks away from the insulator 40 and goes over the insulator 40 to cause a short circuit. On the other hand, according to the semiconductor device 1 of the present embodiment, the first fixing member 31 can be adhered to the first conductor 11 having high adhesion, thereby being able to prevent the solder from being broken away by the insulator 40 and causing a short circuit.

[0075] The melted first fixing member 31 flows in a manner surrounding the first conductor 11 having higher adhesion than the insulator 40, and flows between the first portion 11a and the second portion 11b. The first fixing member 31 and the first conductor 11 also adhere to each other on at least one of the first face F11 and the second face F12, thereby preventing the first fixing member 31 from passing over the insulator 40. Therefore, the insulator 40 can protect the first electrode 21 and prevent a short circuit caused by the first fixing member 31.

[0076] According to the semiconductor device 1 of this embodiment, by forming the first fixing member 31 between the first electrode 21 and the first portion 11a and between the first portion 11a and the second portion 11b, short circuits caused by the first fixing member 31 can be prevented. That is, the reliability of the semiconductor device can be improved.

[0077] Second embodiment

[0078] Figure 3A is a cross-sectional view taken along line AA′ of the semiconductor device 2 according to the second embodiment. Figure 3A A top view of the semiconductor device 1 according to the first embodiment is shown. Figure 1A Therefore, in the following description, for convenience, the cross-sectional view of the drawings other than the first embodiment may be referred to as the AA' cross-sectional view. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described.

[0079] like Figure 3AAs shown, the conductive film 61 is provided on at least a portion of the surface including the first surface F11 of the first portion 11a and the second surface F12 of the second portion 11b. The conductive film 61 is superior to the first conductor 11 in terms of adhesion to the first fixing member 31. For example, the wettability of the conductive film 61 to the melted first fixing member 31 is higher than the wettability of the first conductor 11 to the melted first fixing member 31.

[0080] The conductive film 61 contains at least one metal species of, for example, Ni, Ag, and Sn. The conductive film 61 is formed by, for example, plating a portion of the front surface of the first conductor 11.

[0081] The conductive film 61 may be formed continuously up to the portion in contact with the connection portion 11g of the first conductor 11. For example, when the conductive film 61 is formed by plating, it is preferable to plate the entire surface rather than selectively plate the surface by masking in order to reduce manufacturing cost.

[0082] The configuration of the semiconductor device 2 according to the second embodiment is described above. After describing the modification of the second embodiment, the effects of the semiconductor device 2 according to the second embodiment will be described together with the effects of the modification of the second embodiment.

[0083] Modification of the Second Embodiment

[0084] Figure 3B 2 is a cross-sectional view taken along line AA' of the semiconductor device 2 according to the modification of the second embodiment. Some descriptions of portions common to the semiconductor device 2 according to the second embodiment will be omitted, and only different portions will be described.

[0085] like Figure 3B As shown, at least a portion of the first surface F11 of the first portion 11a and the second surface F12 of the second portion 11b of the first conductor 11 is a rough surface portion 62. The surface roughness of the rough surface portion 62 is greater than the surface roughness of the original surface of the first conductor 11. The rough surface portion 62 can also be obtained by roughening a portion of the surface of the first conductor 11, for example, by sandblasting. The rough surface 62 is superior to the first conductor 11 before treatment in terms of adhesion to the first fixing member 31. For example, the wettability of the rough surface portion 62 to the melted first fixing member 31 is higher than the wettability of the first conductor 11 before treatment to the melted first fixing member 31.

[0086] The effects of the semiconductor device 2 according to the second embodiment or the modified example of the second embodiment will be described below. The semiconductor device 2 according to the present embodiment includes the conductive film 61 or the rough surface portion 62 having excellent adhesion to the first fixing member 31. Therefore, the first fixing member 31 can be more firmly adhered between the first face F11 and the second face F12 than the semiconductor device 1 according to the first embodiment. Compared with the semiconductor device 1 according to the first embodiment, the adhesion is higher, so the first fixing member 31 can be further prevented from passing over the insulator 40. The excess first fixing member 31 can be further prevented from flowing to the second electrode 22. That is, a short circuit can be prevented and reliability can be improved.

[0087] Third embodiment

[0088] Figure 4 and Figure 5 1 is a cross-sectional view taken along line AA' of the semiconductor device 3 according to the third embodiment. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described. Figure 4 As shown, in the semiconductor device 3 according to the present embodiment, a first through hole 11 h penetrating the first portion 11 a of the first conductor 11 in the Z direction is provided.

[0089] The first fixing member 31 fills at least a portion of the first through hole 11h. To prevent the resistance from increasing, preferably all the first through holes 11h are filled with the first fixing member. The first fixing member 31 disposed on the first electrode 21 extends between the first portion 11a and the second portion 11b through the first through hole 11h.

[0090] like Figure 2 In the case shown in FIG. 1 , the first fixing member 31 may be formed continuously in a manner surrounding the first conductor 11. Figure 5 As shown, the first fixing member 31 may be formed in the gap between the first surface F11 and the second surface F12 only through the first through hole 11h. Figure 6 After the description of Figure 5 The BB' section is shown.

[0091] The effects of the semiconductor device 3 according to the present embodiment will be described below. According to the semiconductor device 3 of the present embodiment, by providing the first through hole 11h, the first fixing member 31 is formed between the first face F11 and the second face F12 through the first through hole 11h from above the first electrode 21. Therefore, compared with the semiconductor device 1 according to the first embodiment, the first fixing member 31 is more easily formed between the first face F11 and the second face F12.

[0092] according to Figure 5 The shape of the first fixing member 31 shown is similar to Figure 2Compared with the case of the shape of the first fixing member 31 shown in the figure, it is possible to prevent the first fixing member 31 from flowing from the center to the outer edge of the first electrode 21 during the reflow process. This is because the excess first fixing member 31 can pass through the first through hole 11h. Therefore, by suppressing the momentum of the first fixing member 31 flowing to the outer edge of the first electrode 21, the risk of short circuit caused by the first fixing member 31 can be further reduced.

[0093] According to the semiconductor device 3 of the present embodiment, by forming the first fixing member 31 between the first face F11 and the second face F12 via the first through hole 11h, the first fixing member 31 can be prevented from overflowing onto the second electrode 22 of the semiconductor element 20. That is, the reliability of the semiconductor device can be further improved.

[0094] Fourth embodiment

[0095] Figure 6 4 is a cross-sectional view taken along line AA' of the semiconductor device 4 according to the fourth embodiment. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described. Figure 6 As shown, in the semiconductor device 4 according to the present embodiment, a first through hole 11h is provided which penetrates the second portion 11b of the first conductor 11 in the Z direction. The first fixing member 31 at least partially fills the first through hole 11h.

[0096] In order to prevent the increase of resistance, it is preferred that all the first through holes 11h provided are filled with the first fixing member. When the first through holes 11h are filled with the first fixing member, the resistance can be reduced compared to when an insulating portion (e.g., an air gap) exists in the first through holes 11h. The first fixing member 31 that passes through the first through holes 11h and is continuously formed on the surface of the second portion 11b opposite to the second surface F12 is covered by the resin portion 50.

[0097] The effects of the semiconductor device 4 according to the present embodiment will be described below. According to the semiconductor device 4 according to the present embodiment, by providing the first through hole 11h, the first fixing member 31 can be continuously formed to the surface of the second portion 11b opposite to the second surface F12 through the first through hole 11h. Therefore, the first fixing member 31 can be prevented from overflowing from the gap between the first surface F11 and the second surface F12.

[0098] Therefore, even if the first fixing member 31 for connecting the first electrode 21 and the first conductor 11 is excessive and cannot be accommodated in the gap between the first face F11 and the second face F12, the first fixing member 31 passes through the first through hole 11h and flows out to the face of the second portion 11b opposite to the second face F12, thereby preventing the first fixing member 31 from overflowing in the direction of the second electrode of the semiconductor element 20.

[0099] In addition, although reducing D1 is preferable for ensuring reliable electrical connection between the first electrode 21 and the first portion 11a and for reducing the resistance between the first portion 11a and the second portion 11b, there is a concern that due to reducing D1, the excess first fixing member 31 cannot be accommodated between the first portion 11a and the second portion 11b. According to the semiconductor device 4 of this embodiment, the excess first fixing member 31 can be released above the second portion 11b through the first through hole 11h. Therefore, D1 can be reduced while preventing the risk of overflow of the first fixing member 31.

[0100] According to the semiconductor device 4 of the present embodiment, even when the first fixing members 31 are more than those of the semiconductor device 1 according to the first embodiment, short circuits caused by the first fixing members 31 can be prevented. In other words, the reliability of the semiconductor device can be further improved.

[0101] The semiconductor device 4 according to the fourth embodiment has been described above. Figure 4 and Figure 5 The semiconductor device 3 of the third embodiment described in Figure 6 The shape of the first through hole 11h is common to the semiconductor device 4 of the fourth embodiment described in .

[0102] Figure 7 , Figure 8 and Fig. 9 Shown along Figure 5 The XY plane is intercepted by the line BB'. In addition, Figure 7 , Figure 8 and Fig. 9 can be interpreted as following Figure 6 XY plane diagram intercepted by line CC'. Figure 7 An example in which one first through hole 11h is provided is shown. Figure 8 As shown in FIG. 1 , a plurality of first through holes 11h may be provided in a direction (Y direction) intersecting the direction from B to B'. Fig. 9 As shown, a plurality of first through holes 11h may also be provided in the direction from B to B' (X direction). The shape of the first through holes 11h is not limited to the following. Figure 7 , Figure 8 and Fig. 9 Instead of the rectangle shown, it may be, for example, an oval without corners.

[0103] The first fixing member 31 filling at least a portion of the first through hole 11h generally has different electrical conductivity from the first conductor 11. For example, the electrical conductivity of the first fixing member 31 made of solder is lower than that of the first conductor 11 made of Cu.

[0104] For example Figure 7As shown, by setting the length of the first through hole 11h in the Y direction shorter than the length in the X direction, the current flowing in the direction from B to B' (X direction) mainly passes through the first conductor 11. Therefore, compared with the case where the width of the first through hole 11h in the direction (Y direction) intersecting the direction from B to B' (X direction) is increased, it is possible to prevent the resistance from increasing.

[0105] The length of the first through hole 11h in the direction from B to B' (X direction) is referred to as L1, and the length in the direction intersecting the X direction (Y direction) is referred to as L2. For example, L1 is longer than L2. L1 may be longer than twice L2 or longer than three times L2.

[0106] On the other hand, the wider the first through hole 11h is set in the XY plane, the more efficiently the redundant first fixing member 31 can pass through the first through hole 11h, thereby further preventing the overflow of the first fixing member 31. That is, it is preferable to set the first through hole 11h wider in the XY plane to prevent short circuit. On the other hand, the wider the first through hole 11h is set, the more the resistance between BB' increases when the conductivity of the first fixing member 31 is lower than the conductivity of the first conductor 11. Since there is such a trade-off relationship in the way of setting the first through hole 11h, it is necessary to optimize the arrangement and area of ​​the first through hole 11h to prevent short circuit and increase in resistance.

[0107] Will refer to Figure 8 An example of a method for optimizing the arrangement and area of ​​the first through holes 11 h is described. Figure 8 The first conductor 11 shown has a plurality of first through holes 11h in the Y direction. The interval between the first through holes 11h in the Y direction is referred to as L3.

[0108] As L1 and L3 are fixed and L2 increases, the area of ​​the first through hole 11h becomes larger. On the other hand, by increasing L2, the proportion of the current flowing in the X direction that passes through the first conductor 11 decreases, while the proportion of the current that passes through the first fixing member 31 increases, so there is a risk that the resistance between B and B' may increase.

[0109] Therefore, by changing L1 and L2 simultaneously, both the area and resistance of the first through hole 11h can be optimized. L1 can be made larger to facilitate the first fixing member 31 to pass through the first through hole 11h over a wide range in the X direction, while L2 can be made smaller to prevent resistance from increasing.

[0110] For example, L1 is longer than L2. L1 may be longer than twice L2 or longer than three times L2. For example, L3 is longer than L2. L3 may be longer than twice L2 or longer than three times L2.

[0111] Furthermore, by increasing or decreasing the number of the first through holes 11 h in the Y direction and increasing or decreasing L3, the area of ​​the first through holes 11 h in the XY plane can be increased or decreased.

[0112] That is, in Figure 8 In the shape of the first through hole 11h shown, by changing L1, L2, L3 and the number of the first through holes 11h, the area of ​​the first through hole 11h can be changed to optimize the ratio of the first fixing member 31 to the first conductor 11. By changing L1, L2, L3 and the number of the first through holes 11h, optimization can be performed to prevent short circuits and keep the resistance below a predetermined value.

[0113] like Fig. 9 As shown, a plurality of first through holes 11h can also be divided and arranged in the X direction.

[0114] According to Figure 4 and Figure 5 In the semiconductor device 3 of the third embodiment described above, the first through hole 11h is at least partially filled with the first fixing member 31, and the excess first fixing member 31 diffuses through the first through hole 11h, thereby preventing a short circuit failure caused by the first fixing member 31. The shape of the first through hole 11h can be determined in such a way as to prevent an increase in resistance due to the provision of the first through hole 11h. By referring to Figure 6 The semiconductor device 4 of the fourth embodiment described above can also obtain the same effects.

[0115] Fifth embodiment

[0116] Fig.10 1 is a cross-sectional view taken along line AA' of the semiconductor device 5 according to the fifth embodiment. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described. Fig.10 As shown, in the semiconductor device 5 according to the present embodiment, the first conductor 11 further includes a third portion 11c. The third portion 11c is formed continuously with the second portion 11b.

[0117] In the first conductor 11, a first portion 11a, a second portion 11b, and a third portion 11c are sequentially formed. That is, the third portion 11c is formed between the protrusion 11p and the second portion 11b. The first portion 11a, the second portion 11b, and the third portion 11c are integrally formed from a single conductive structure, for example, by bending the first conductor 11.

[0118] The first portion 11a faces the first electrode 21 in the Z direction. The first surface F11 of the first portion 11a and the second surface F12 of the second portion 11b face each other with a gap in the Z direction. The third portion 11c faces the first electrode 21 in the Z direction.

[0119] The second portion 11b is located in the positive direction of the Z direction relative to the first portion 11a. The second portion 11b is located in the positive direction of the Z direction relative to the third portion 11c. The first portion 11a and the third portion 11c may be arranged at the same height in the Z direction. Here, the height refers to, for example, a distance measured from the first electrode 21 in the positive direction of the Z direction. This is preferred because by arranging the first portion 11a and the third portion 11c at the same height in the Z direction, the thickness of the first fixing member 31 in the Z direction can be made uniform between the first portion 11a and the first electrode 21 and between the third portion 11c and the first electrode 21, and the first conductor 11 can be arranged flat on the first fixing member 31.

[0120] The first fixing member 31 is disposed between the first electrode 21 and the first portion 11 a , between the first electrode 21 and the third portion 11 c , and between the first portion 11 a and the second portion 11 b .

[0121] In addition, the first conductor 11 may have a fourth portion 11d disposed higher than the third portion 11c between the third portion 11c and the protrusion 11p. The fourth portion 11d is, for example, formed continuously and integrally with the third portion 11c. By disposing the fourth portion 11d higher than the third portion 11c, the risk of causing a short circuit between the fourth portion 11d and a portion of the semiconductor element 20 other than the first electrode 21 is reduced. Therefore, the first conductor 11 preferably has the fourth portion 11d disposed higher than the third portion 11c.

[0122] The effects of the semiconductor device 5 according to the present embodiment will be described below. In the semiconductor device 5 according to the present embodiment, the third portion 11c of the first conductor 11 is continuously formed, for example, between the protrusion 11p and the second portion 11b. According to the semiconductor device 5 of the present embodiment, by forming the first fixing member 31 between the first portion 11a and the second portion 11b, it is possible to prevent the first fixing member 31 from overflowing in the direction of the second electrode 22 of the semiconductor element 20. In particular, it is possible to prevent the first fixing member 31 from reaching the second electrode 22 along the side surface of the semiconductor element 20 opposite to the side surface close to the protrusion 11p of the first conductor 11.

[0123] The semiconductor device 1 according to the first embodiment is superior to the semiconductor device 5 according to the present embodiment in terms of the effect of preventing the first fixing member 31 from reaching the second electrode 22 along the side of the semiconductor element 20 close to the protruding portion 11p of the first conductor 11. On the other hand, the semiconductor device 5 according to the present embodiment is superior to the semiconductor device 1 according to the first embodiment in terms of the effect of preventing the first fixing member 31 from reaching the second electrode 22 along the side opposite to the side of the semiconductor element 20 close to the protruding portion 11p of the first conductor 11. This is because the space into which the excess first fixing member 31 flows is located at different positions in the X direction between the semiconductor device 1 according to the first embodiment and the semiconductor device 5 according to the present embodiment.

[0124] Furthermore, in the semiconductor device 5 according to the present embodiment, for a current flowing from the first electrode 21 to the first conductor 11, or a current flowing in the reverse direction, the path of the current passing through the first conductor 11 is shorter than that in the semiconductor device 1 according to the first embodiment. The current can flow from the first electrode 21 to the protrusion 11p through the first fixing member 31, the third portion 11c, and the fourth portion 11d.

[0125] For example, the conductivity of the first conductor 11 is higher than that of the first fixing member 31. Therefore, in the semiconductor device 5 according to the present embodiment, compared with the semiconductor device 1 according to the first embodiment, the current is allowed to flow through a shorter path in the first conductor 11, thereby reducing the resistance.

[0126] According to the semiconductor device 5 of the present embodiment, a gap can be formed between the first portion 11a and the second portion 11b at a position different from that of the semiconductor device 1 of the first embodiment in the X direction, and a short circuit can be prevented due to the first fixing member 31. In addition, a current can flow through a shorter path through the third portion 11c, and resistance can be reduced.

[0127] Sixth embodiment

[0128] Fig.11 1 is a cross-sectional view taken along line AA' of the semiconductor device 6 according to the sixth embodiment. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described. Fig.11 As shown, in the semiconductor device 6 according to the present embodiment, the distance between the first portion 11 a and the second portion 11 b of the first conductor 11 along the Z direction is not uniform.

[0129] A first fixing member 31 is at least partially provided between the first surface F11 and the second surface F12. The distance between the first surface F11 and the second surface F12 in the Z direction is D1. D1 is, for example, 30 μm or less. On the other hand, in a part of the second portion 11 b, the distance D3 from the first surface F11 in the Z direction is smaller than D1.

[0130] For example Fig.11 As shown, the distance between the first portion 11a and the second portion 11b along the Z direction decreases toward the negative direction of the X direction. In other words, the gap between the first portion 11a and the second portion 11b narrows along the negative direction of the X direction.

[0131] D3 may be small enough, for example, to electrically connect the first portion 11a to the second portion 11b, and the first portion 11a and the second portion 11b may at least partially contact each other. In a portion other than a portion where the first portion 11a and the second portion 11b are continuously formed by bending the first conductor 11, the first portion 11a and the second portion 11b are partially electrically connected by contacting each other.

[0132] For example, by partially extruding a Figure 2 The first conductor 11 of the structure shown in the figure can obtain a structure in which the first part 11a and the second part 11b are in contact with each other. Figure 2 In the process, pressure is selectively applied to the portion on the negative side in the X direction among the portions where the first portion 11a and the second portion 11b are opposed to each other to press the portion, thereby obtaining Fig.11 For example, Fig.11 The structure shown extends in the Y direction. In other words, the portion can be compressed by applying pressure uniformly in the Y direction.

[0133] A structure may be adopted in which pressure is partially applied in the Y direction to bring the first portion 11a and the second portion 11b into contact with each other. Fig.11 Although not shown in the figure, for example, the first part 11a and the second part 11b may be in contact with each other at a portion of the end portion on the positive side in the X direction in the gap between the first part 11a and the second part 11b. That is, the first part 11a and the second part 11b may be brought into contact with each other by locally applying pressure in the Y direction.

[0134] If a gap is formed at least partially in the Y direction between the first portion 11a and the second portion 11b, the first fixing member 31 can flow into the gap, thereby achieving a short circuit prevention effect. Since the first portion 11a and the second portion 11b can contact each other over a wider area, the resistance can be reduced.

[0135] The configuration of the semiconductor device 6 according to the sixth embodiment has been described above. Next, the effect of the semiconductor device 6 according to the present embodiment will be described. In the semiconductor device 6 according to the present embodiment, the distance between the first portion 11a and the second portion 11b in the Z direction is not uniform. By forming a gap of D3 that is smaller than D1, the gap between the first portion 11a and the second portion 11b can be filled with a smaller amount of the first fixing member 31 than the semiconductor device 1 according to the first embodiment. Therefore, the portion where the first portion 11a and the second portion 11b are not electrically connected in the Z direction is reduced, and the resistance can be reduced.

[0136] Furthermore, by making D3 small enough to electrically connect the first portion 11a and the second portion 11b, the flow path of the current can be made shorter and the flow path can be made wider. Therefore, the resistance between the first portion 11a and the second portion 11b is further reduced.

[0137] According to the semiconductor device 6 of the present embodiment, the resistance can be reduced by making the flow path of the current flowing from the first portion 11a to the second portion 11b or in the reverse direction shorter or wider. That is, a semiconductor device with lower resistance and improved performance can be provided.

[0138] Furthermore, according to the semiconductor device 6 of the present embodiment, even when the amount of the first fixing member 31 existing between the first portion 11a and the second portion 11b is smaller than that of the semiconductor device 1 according to the first embodiment, electrical connection between the first portion 11a and the second portion 11b is ensured.

[0139] In accordance with Figure 2 In the semiconductor device 1 of the first embodiment shown, when the amount of the extra first fixing member 31 is not large enough to fill the space between the first portion 11a and the second portion 11b, it is conceivable that the sealing resin forming the resin portion 50 flows between the first portion 11a and the second portion 11b. In addition, an air gap can also be formed between the first portion 11a and the second portion 11b. The more the sealing resin flows between the first portion 11a and the second portion 11b, the more the insulating portion increases, and thus the resistance between the first portion 11a and the second portion 11b increases.

[0140] On the other hand, according to the present embodiment, by making a part of the second portion 11b contact the first portion 11a, the space between the first portion 11a and the second portion 11b can be reduced. Even when the amount of the redundant first fixing member 31 is small, the gap into which the sealing resin forming the resin portion 50 flows between the first portion 11a and the second portion 11b can be reduced.

[0141] According to the semiconductor device 6 of the present embodiment, by making the distance between the first portion 11 a and the second portion 11 b in the Z direction non-uniform, it is possible to reduce the resistance to the current flowing through the first portion 11 a and the second portion 11 b.

[0142] Seventh embodiment

[0143] Fig.12 1 is a cross-sectional view taken along line AA' of the semiconductor device 7 according to the seventh embodiment. Some descriptions of the parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the different parts will be described. Fig.12 As shown, the semiconductor device 7 according to the present embodiment includes a second conductor 12 and a third conductor 13 instead of the first conductor 11 .

[0144] The second conductor 12 has a fifth portion 12a that is opposed to the first electrode 21 in the Z direction. The fifth portion 12a is opposed to the first electrode 21 in the Z direction with the first fixing member 31 therebetween, and is electrically connected to the first electrode 21 via the first fixing member 31. The fifth portion 12a has a third surface F21 on the side opposite to the surface that is opposed to the first electrode 21 in the Z direction.

[0145] The second conductor 12 has a sixth portion 12b that is spaced apart from and opposed to the fifth portion 12a in the Z direction. A space exists between the fifth portion 12a and the sixth portion 12b in the Z direction. The sixth portion 12b has a fourth surface F22. The fourth surface F22 is spaced apart from and opposed to the third surface F21 of the fifth portion 12a in the Z direction.

[0146] The second conductor 12 is integrally formed of, for example, a single conductive structure, and the fifth portion 12a and the sixth portion 12b are made of the same material, for example, a metal containing Cu.

[0147] The third conductor 13 has a seventh portion 13a. The fifth surface F31 of the seventh portion 13a of the third conductor 13 is at least partially in contact with the third surface F21. In other words, the third surface F21 of the second conductor 12 and the fifth surface F31 of the third conductor 13 are electrically connected in whole or at least in part on the surface.

[0148] The seventh portion 13a further includes a sixth surface F32 which is a surface opposite to the fifth surface F31. The sixth surface F32 is at least partially in contact with the fourth surface F22 of the sixth portion 12b of the second conductor 12. That is, the fifth portion 12a and the sixth portion 12b of the second conductor 12 which are spaced apart in the Z direction are electrically connected to each other via the seventh portion 13a of the third conductor 13. The third surface F21 and the fifth surface F31 are in contact with each other, and the fourth surface F22 and the sixth surface F32 are in contact with each other.

[0149] The third conductor 13 has an eighth portion 13b in addition to the seventh portion 13a. For example, the eighth portion 13b is formed continuously and integrally with the seventh portion 13a. The eighth portion 13b has a seventh surface F33 that is continuous with the fifth surface F31 of the seventh portion 13a. The seventh surface F33 is arranged in the positive direction of the Z direction relative to the fifth surface F31. In other words, the third surface F21 and the seventh surface F33 are separated in the Z direction. There is a space between the fifth portion 12a and the eighth portion 13b in the Z direction.

[0150] At least a portion of the seventh surface F33 is in contact with the first fixing member 31. The first fixing member 31 is at least partially disposed between the third surface F21 and the seventh surface F33 spaced apart in the Z direction, and electrically connects the third surface F21 and the seventh surface F33. The first fixing member is disposed in the space between the fifth portion 12a and the eighth portion 13b along the first direction.

[0151] The distance D4 between the third surface F21 and the seventh surface F33 along the Z direction is approximately equal to or less than the distance D2 between the first electrode 21 and the fifth portion 12a. Here, D4 ​​is defined as the maximum value when the distance between the third surface F21 and the seventh surface F33 is not constant in the X direction. D4 is, for example, 30 μm or less.

[0152] The effects of the semiconductor device 7 according to the present embodiment will be described below. According to the semiconductor device 7 of the present embodiment, the first connection member 31 is formed in the gap generated by the separation along the Z direction between the third face F21 of the second conductor 12 and the seventh face F33 of the third conductor 13, and overflow of the first fixing member 31 is prevented, so that a short-circuit failure caused by the first connection member 31 can be prevented.

[0153] In addition, as with the semiconductor device 6 according to the sixth embodiment, the resistance can be reduced by shortening and widening the current path compared to the semiconductor device 1 according to the first embodiment. That is, since the second conductor 12 and the third conductor 13 are electrically connected to each other by the third face F21 and the fifth face F31 being in contact with each other, the flow path of the current flowing from the first electrode 21 to the third conductor 13 via the second conductor 12 or the current flowing in the reverse direction can be shortened and widened.

[0154] Furthermore, the gap between the third face F21 and the seventh face F33 into which the first fixing member 31 flows may be formed to be narrowed in the negative direction along the X direction. In the sixth embodiment, the shape of the gap is controlled by extruding a portion of the first conductor 11. In the manufacturing method of extruding the first conductor 11 along the Z direction, the ductility of the material of the first conductor 11 may be affected by environmental changes such as temperature, and the finally obtained structure may be affected by the deviation of the extrusion position.

[0155] On the other hand, in the structure according to the present embodiment, the shape of the gap into which the first fixing member 31 flows is controlled by the shape of the third conductor 13. For example, a mold can be used to mold the shape of the third conductor 13. Therefore, according to the present embodiment, the gap into which the first fixing member 31 flows can be controlled more accurately than in the sixth embodiment.

[0156] According to the semiconductor device 7 of the present embodiment, short-circuit failure due to the first fixing member 31 can be prevented and resistance can be reduced. In addition, the shape of the gap into which the first fixing member 31 flows can be precisely controlled by the connection portion of the third conductor 13 .

[0157] Modification of the Seventh Embodiment

[0158] A semiconductor device 7' which is a modification of the semiconductor device 7 according to the seventh embodiment will be described below. Some descriptions of parts common to the semiconductor device 7 according to the seventh embodiment will be omitted, and only different parts will be described. Fig.13 It is a cross-sectional view taken along the line AA′ of a semiconductor device 7 ′ which is a modification of the semiconductor device 7 according to the seventh embodiment.

[0159] In this modification, a second through hole 12h is provided to penetrate the fifth portion 12a of the second conductor 12 in the Z direction. The first fixing member 31 passes through the second through hole 12h from the first electrode 21 to the third surface F21 of the second conductor 12. The first fixing member 31 can also reach the fourth surface F22 of the sixth portion 12b of the second conductor 12.

[0160] Regarding the shape and arrangement of the second through holes 12h in the XY plane, it can be expressed similarly to Figure 7 , Figure 8 and Fig. 9 Various arrangements shown in .

[0161] D4 is approximately equal to or less than D2. A distance D5 between the third surface F21 and the fourth surface F22 along the Z direction is approximately equal to or less than D2. D5 is, for example, 30 μm or less. By setting D4 and D5 to be approximately equal to or less than the length of D2, the risk of insufficient first fixing member 31 between the first electrode 21 and the fifth portion 12a can be reduced.

[0162] The effect of a modification of the semiconductor device 7' according to the seventh embodiment will be described below. In the semiconductor device 7' according to this modification, the third face F21 of the second conductor 12 is spaced apart from the seventh face F33 of the third conductor 13 in the Z direction, and the third face F21 of the second conductor 12 is spaced apart from the fourth face F22. At least a portion of each of these gaps is filled with the first fixing member 31. The first fixing member 31 fills at least a portion of the gap provided between the second conductor 12 and the third conductor 13 near both ends in the positive and negative directions of the X direction in the semiconductor element 20. That is, it is possible to prevent the first fixing member 31 from overflowing on both sides in the positive and negative directions of the X direction.

[0163] According to the semiconductor device 7' of this modification, the first fixing member 31 can be prevented from overflowing on both sides of the positive and negative directions in the X direction. Short circuits caused by the first fixing member 31 can be prevented on the side surfaces of the semiconductor element 20 in both directions in the X direction, and the reliability of the semiconductor device can be improved.

[0164] According to at least one of the above-described embodiments, by at least partially forming the first fixing member 31 in the gap in which the first conductor 11, the second conductor 12, or the third conductor 13 is provided, the first fixing member 31 can be prevented from overflowing in the direction of the second electrode 22. By preventing a short circuit due to the first fixing member 31, the reliability of the semiconductor device can be improved.

[0165] The embodiments are described above with reference to specific examples. However, the embodiments are not limited to these specific examples. That is, the solutions obtained by those skilled in the art by modifying the designs of these specific examples as appropriate fall within the scope of the embodiments as long as they have the characteristics of the embodiments. The elements of the above-mentioned specific examples and their arrangements, materials, conditions, shapes, sizes, etc. are not limited to the illustrated cases, but can be changed as appropriate.

[0166] The elements of the above-mentioned embodiments can be combined within the technically possible range, and the combination of these elements falls within the scope of the embodiments as long as they have the characteristics of the embodiments. In addition, within the scope of the idea of ​​the embodiments, those skilled in the art can conceive of various modifications and changes, and understand that these modifications and changes also fall within the scope of the embodiments.

[0167] Although certain embodiments have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the present disclosure. In fact, the novel embodiments described herein may be embodied in a variety of other forms; in addition, various omissions, substitutions, and changes may be made to the forms of the embodiments described herein without departing from the spirit of the present disclosure. The attached claims and their equivalents are intended to cover such forms or variations that fall within the scope and spirit of the present disclosure.

Claims

1. A semiconductor device comprising: Lead frame; Semiconductor components, including: a first electrode, and A second electrode, electrically connected to the lead frame, and disposed on a surface opposite to the first electrode in a first direction; A first conductor comprises: a first portion, which is opposite to the first electrode in the first direction, and a second portion at least partially spaced apart from the first portion in the first direction and opposite to the first portion; and The first fixing member is disposed between the first electrode and the first portion and between the first portion and the second portion in the first direction.

2. The semiconductor device according to claim 1, wherein The first conductor has a connecting portion between the first portion and the second portion.

3. The semiconductor device according to claim 1, wherein The first conductor is integrally formed from a single conductive structure.

4. The semiconductor device according to claim 1, wherein The first conductor is formed of a metal containing Cu, The first fixing member is formed of solder.

5. The semiconductor device according to claim 1, further comprising: An insulator covers the edge of the first electrode.

6. The semiconductor device according to claim 1, wherein The first surface and at least a portion of the second surface of the second part are coated with a first metal type different from the first conductor, wherein the first surface is the surface of the first part opposite to the surface opposite to the first electrode, and the second surface of the second part is at least partially separated from the first surface in the first direction and opposite to the first surface.

7. The semiconductor device according to claim 6, wherein: The first conductor is formed of a metal containing Cu, and The first metal species includes at least one of Ni, Ag, and Sn.

8. The semiconductor device according to claim 1, wherein The surface roughness of a first surface of the first part which is opposite to the surface opposing the first electrode, and at least a portion of a second surface of the second part are greater than the surface roughness of other portions of the first conductor, wherein the second surface of the second part is at least partially separated from the first surface in a first direction and opposed to the first surface.

9. The semiconductor device according to claim 1, wherein: The first conductor has a first through hole penetrating the first portion along the first direction, and The first fixing member fills at least a portion of the first through hole.

10. The semiconductor device according to claim 9, wherein The first through hole is filled with the first fixing member.

11. The semiconductor device according to claim 1, wherein The first conductor has a first through hole penetrating the second portion along the first direction, and The first fixing member fills at least a portion of the first through hole.

12. The semiconductor device according to claim 11, wherein The first through hole is filled with the first fixing member.

13. The semiconductor device according to claim 1, wherein The first conductor has a plurality of through holes penetrating the first portion along the first direction, and The plurality of through holes are each filled with the first fixing member.

14. The semiconductor device according to claim 1, wherein The first conductor has a third portion formed continuously with the second portion, The third portion is opposed to the first electrode via the first fixing member, and A distance between the third portion and the first electrode along the first direction is smaller than a distance between the second portion and the first electrode along the first direction.

15. The semiconductor device according to claim 1, wherein The first portion and the second portion of the first conductor at least partially contact each other.

16. A semiconductor device comprising: Lead frame; Semiconductor components, including: a first electrode, and A second electrode, electrically connected to the lead frame, and disposed on a surface opposite to the first electrode in a first direction; A first conductor comprises: a first portion, which is opposite to the first electrode in the first direction, and a second portion at least partially spaced apart from the first portion in the first direction and opposite to the first portion; and a first fixing member electrically connecting the first electrode and the first conductor, The first electrode, the first fixing member, the first portion, the first fixing component and the second portion are arranged in sequence in the first direction.

17. The semiconductor device according to claim 16, further comprising: An insulator is provided on the semiconductor element, the insulator covering an edge of the first electrode and separating the first fixing member and the second electrode.

18. A semiconductor device comprising: Lead frame; Semiconductor components, including: a first electrode, and A second electrode, electrically connected to the lead frame, and disposed on a surface opposite to the first electrode in a first direction; A first conductor comprises: a first portion, which is opposite to the first electrode in the first direction, and a second portion at least partially spaced from the first portion in the first direction and opposite to the first portion; The second conductor comprises: a third portion disposed between the first portion and the second portion and at least partially in contact with the first portion and the second portion, and a fourth portion connected to the third portion and spaced apart from the first portion in the first direction; and The first fixing member is at least partially disposed between the first electrode and the first portion, and is disposed between the first portion and the fourth portion along the first direction.

19. The semiconductor device according to claim 18, wherein: The height of the first fixing member disposed between the first portion and the fourth portion along the first direction is maximum at an edge of the first fixing member and gradually decreases along a second direction crossing the first direction and facing the first conductor.

20. The semiconductor device according to claim 19, wherein The first conductor has a through hole penetrating the first portion and filled with the first fixing member.

Images