Asymmetric quantum barrier semiconductor laser and application thereof

Abstract

The invention discloses an asymmetric quantum barrier semiconductor laser and application thereof, and the asymmetric quantum barrier semiconductor laser comprises an active region, two sides of the active region are provided with an N-side quantum barrier region and a P-side quantum barrier region which are asymmetric, and the N-side quantum barrier region and the P-side quantum barrier region are made of the same semiconductor material. The N-side quantum barrier region and the P-side quantum barrier region simultaneously regulate and control the carrier limiting capability and the light field distribution of the laser; the N-side quantum barrier region and the P-side quantum barrier region can have different thicknesses and can also have different material component distribution forms or different material component sizes, and at least one physical parameter of the thicknesses, the material component distribution forms and the material component sizes of the N-side quantum barrier region and the P-side quantum barrier region is different. According to the semiconductor laser and the application thereof provided by the invention, the limiting capability of a quantum barrier on current carriers can be improved, the slope efficiency of the semiconductor laser is improved, and then the electro-optical conversion efficiency and the output power of the semiconductor laser are improved; in addition, the light field regulation freedom degree of the laser can be increased, the large near-field size can be obtained under the condition that the thin epitaxial thickness is guaranteed, and the electro-optical conversion efficiency of the semiconductor laser is further improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor lasers, and in particular to an asymmetric quantum barrier semiconductor laser. Background Art

[0002] Semiconductor lasers have high electro-optical conversion efficiency, good coherence and small size, so they are often used in pumping, fiber coupling and material processing of solid-state lasers and fiber lasers.

[0003] The thickness and component distribution of the quantum barriers on both sides of the active region of traditional semiconductor lasers are exactly the same, resulting in the blocking potential barriers for electrons and holes being very different. Therefore, when one type of carrier is well confined, the leakage of the other type of carrier is often very serious, resulting in low slope efficiency of the laser. Although some research groups have introduced asymmetric barriers of different materials to suppress the leakage of carriers, the poor lattice matching between different material systems increases the difficulty of growth and leads to unstable life of the laser. In addition, the symmetrical quantum barriers also lead to low degrees of freedom in the optical field control of the laser, which is not conducive to the design and preparation of high-efficiency semiconductor lasers. Summary of the invention

[0004] In view of the deficiencies in the background technology, the present invention provides an asymmetric quantum barrier semiconductor laser and its application, in order to at least partially solve at least one of the above technical problems.

[0005] In order to achieve the above object, as one aspect of the present invention, an asymmetric quantum barrier semiconductor laser is provided, comprising: Active region, with asymmetric N-side quantum barrier region and P-side quantum barrier region on both sides of the active region, the N-side quantum barrier region and the P-side quantum barrier region use the same semiconductor material, and the N-side quantum barrier region and the P-side quantum barrier region simultaneously regulate the carrier confinement capability and light field distribution of the laser; The N-side quantum barrier region and the P-side quantum barrier region can have different thicknesses, and can also have different material component distribution forms or different material component sizes. The thickness, material component distribution form, and material component size of the N-side quantum barrier region and the P-side quantum barrier region have at least one different physical parameter.

[0006] Further, the active region contains active materials to provide gain for the laser; The N-side quantum barrier region is located on the N-type waveguide region to block the leakage of holes; The P-side quantum barrier region is located on the active region to prevent the leakage of electrons.

[0007] Furthermore, it also includes: N-type side electrode, forming the electric injection channel of the laser; An N-type substrate region, located on the N-type side electrode, to support the semiconductor chip; An N-type limiting region, located on the N-type substrate region, to limit the expansion of the light field; An N-type waveguide region, located on the N-type confinement region, to achieve expansion of the light field; The P-type waveguide region is located on the P-side quantum barrier region to appropriately expand the light field; A P-type confinement region, located on the P-type waveguide region, to limit the expansion of the light field; A P-type contact region, located on the P-type confinement region, to form an ohmic contact with the P-type side electrode; The insulating region is located on the contact region to limit the current injection channel on the P side; The P-type side electrode is located on the insulating area and the contact area, forming a current injection channel on the P side.

[0008] Furthermore, the N-side quantum barrier region and the P-side quantum barrier region can be extended to a situation where the two are made of different materials.

[0009] Furthermore, the N-type substrate region, N-type confinement region, N-type waveguide region, N-side quantum barrier region, active region, P-side quantum barrier region, P-type waveguide region, P-type confinement region, and P-type contact region are all semiconductor laser materials, in the form of single-layer, multi-layer, or gradient material distribution.

[0010] Furthermore, the ridge region of the asymmetric quantum barrier semiconductor laser is formed by dry etching or wet etching to the N-type confinement region or the N-type waveguide region.

[0011] Furthermore, the asymmetric quantum barrier semiconductor laser is pumped by electric pumping or optical pumping.

[0012] As another aspect of the present invention, there is also provided an application of the asymmetric quantum barrier semiconductor laser as described above in the field of semiconductor lasers.

[0013] After adopting the above technical solution, the present invention has the following advantages compared with the prior art: By introducing asymmetric quantum barriers of the same material system into semiconductor lasers and making the thickness, component distribution or component size of the quantum barriers on both sides of the active region different, the ability of the quantum barriers to restrict carriers is improved, the leakage of carriers is effectively reduced, the slope efficiency of the semiconductor laser is improved, and the electro-optical conversion efficiency and output power of the semiconductor laser are thereby improved; At the same time, the asymmetric quantum barrier increases the degree of freedom of light field control. Under the condition of ensuring a thin epitaxial thickness, a larger near-field size can be obtained, further improving the electro-optical conversion efficiency of semiconductor lasers and providing new ideas for the research and development of semiconductor lasers. The invention has broad application prospects in high-efficiency semiconductor laser output.

[0014] The present invention is described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a cross-sectional view of an asymmetric quantum barrier semiconductor laser according to an embodiment of the present disclosure; Figure 2 yes Figure 1 The electric field distribution (black line) and refractive index distribution (gray line) of the asymmetric quantum barrier semiconductor laser are shown in the figure. x Represents the spatial position in the extension direction, the left vertical coordinate | E | n represents the normalized absolute value of the electric field, n Represents the refractive index of the material. The inset in the figure is a magnified view of the active area.

[0016] In the figure, 1-N-type side electrode, 2-N-type substrate region, 3-N-type confinement region, 4-N-type waveguide region, 5-N-side quantum barrier region, 6-active region, 7-P-side quantum barrier region, 8-P-type waveguide region, 9-P-type confinement region, 10-P-type contact region, 11-insulating region, 12-P-type side electrode. DETAILED DESCRIPTION

[0017] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, specific embodiments of the present invention are now described with reference to the accompanying drawings.

[0018] Traditional semiconductor lasers usually use exactly the same quantum barrier structure on both sides of the active region, resulting in different laser confinement capabilities for electrons and holes, which restricts the improvement of the laser's slope efficiency and electro-optical conversion efficiency.

[0019] like Figure 1 As shown, the present invention provides an asymmetric quantum barrier semiconductor laser, comprising: an active region 6, with asymmetric N-side quantum barrier regions 5 and P-side quantum barrier regions 7 on both sides of the active region 6, the N-side quantum barrier regions 5 and the P-side quantum barrier regions 7 are made of the same semiconductor material, and the carrier confinement capability and light field distribution of the laser are regulated at the same time; The N-side quantum barrier region 5 and the P-side quantum barrier region 7 may have different thicknesses, and may also have different material component distribution forms or material component sizes.

[0020] The N-side quantum barrier region 5 and the P-side quantum barrier region 7 are both GaPAs or AlGaAs or AlGaInP or AlGaPAs or AlGaInAs, etc., so as to enhance the carrier confinement capability and increase the degree of freedom of light field control.

[0021] The N-side quantum barrier region 5 and the P-side quantum barrier region 7 are made of the same semiconductor material, but have at least one physical parameter that is different, such as thickness, material component distribution form, material component size, etc.

[0022] The components of the N-side quantum barrier region 5 and the P-side quantum barrier region 7 may be constant, linearly distributed, or nonlinearly distributed.

[0023] The active region 6 may include active materials such as semiconductor bulk materials, semiconductor quantum wells, semiconductor quantum wires, semiconductor quantum dots, etc., to provide gain for the laser.

[0024] The N-side quantum barrier region 5 is located on the N-type waveguide region 4 to block the leakage of holes.

[0025] The P-side quantum barrier region 7 is located on the active region 6 to block the leakage of electrons.

[0026] An asymmetric quantum barrier semiconductor laser also includes: N-type side electrode 1, forming an electric injection channel for the laser; An N-type substrate region 2, located on the N-type side electrode 1, to support the semiconductor chip; An N-type limiting region 3, located on the N-type substrate region 2, to limit the expansion of the light field; An N-type waveguide region 4 is located on the N-type confinement region 3 to achieve expansion of the light field; A P-type waveguide region 8 is located on the P-side quantum barrier region 7 to appropriately expand the optical field; A P-type confinement region 9, located on the P-type waveguide region 8, to limit the expansion of the light field; A P-type contact region 10 is located on the P-type confinement region 9 to form an ohmic contact with the P-type side electrode 12; An insulating region 11, located on the contact region 10, to limit the current injection channel on the P side; The P-type side electrode 12 is located on the insulating region 11 and the contact region 10 to form a current injection channel on the P side.

[0027] According to the embodiments of the present disclosure, the above-mentioned N-type substrate region 2, N-type confinement region 3, N-type waveguide 4, N-side quantum barrier region 5, active region 6, P-side quantum barrier region 7, P-type waveguide region 8, P-type confinement region 9, and P-type contact region 10 are common semiconductor laser materials; the material distribution forms may be single layer, multi-layer, gradient, etc.

[0028] According to the embodiment of the present disclosure, the ridge region of the asymmetric quantum barrier semiconductor laser is formed by dry etching or wet etching to the N-type confinement region 3 or the N-type waveguide region 4 .

[0029] According to the embodiments of the present disclosure, the asymmetric quantum barrier semiconductor laser is manufactured by semiconductor processing techniques such as thin film growth, epitaxial growth, exposure, and corrosion, and no special process is required.

[0030] According to an embodiment of the present disclosure, the pumping method of the asymmetric quantum barrier semiconductor laser is electric pumping or optical pumping.

[0031] According to an embodiment of the present disclosure, an asymmetric quantum barrier semiconductor laser is applied in the field of semiconductor lasers.

[0032] According to the embodiments of the present disclosure, the asymmetric N-side quantum barrier region 5 and the P-side quantum barrier region 7 can be extended to a case where the two are made of different materials.

[0033] Figure 2 yes Figure 1 The electric field distribution and refractive index distribution of the asymmetric quantum barrier semiconductor laser in the embodiment shown in the epitaxial direction are shown in the horizontal axis. x is the spatial position in the extension direction, in μm; the left ordinate | E | n is the normalized electric field distribution of the fundamental transverse mode, and the vertical coordinate on the right is n The refractive index distribution in the epitaxial direction; the inset is an enlarged view of the active region. 0.8 P 0.2 As; the component of the quantum barrier on the N side is Al 0.48 Ga 0.52 As linear gradient to Al 0.42 Ga 0.58 As, thickness is 30nm; the component of the quantum barrier on the P side is Al 0.42 Ga 0.58 As linear gradient to Al 0.45 Ga 0.55 As, the thickness is 15nm. This asymmetric quantum barrier structure is conducive to improving the symmetry of the conduction band order and the valence band order, making the time for electrons and holes to arrive at the active region closer, and also helping to reduce the thickness of the P-type waveguide region, thereby improving the slope efficiency and electro-optical conversion efficiency of the semiconductor laser.

[0034] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure.

[0035] Moreover, the shapes and sizes of the components in the figures do not reflect the actual size and proportion, but only illustrate the contents of the embodiments of the present disclosure. Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "one" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0036] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. However, this method of invention should not be interpreted as reflecting the following intention: the claimed disclosure requires more features than the features explicitly recited in each claim. More specifically, as reflected in the claims below, the inventive aspects lie in less than all the features of a single embodiment of the preceding invention. Therefore, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, with each claim itself serving as a separate embodiment of the present disclosure.

[0037] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above description is only a specific embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. An asymmetric quantum barrier semiconductor laser, characterized in that: The active region (6) comprises an active region (6), and the active region (6) has an asymmetric N-side quantum barrier region (5) and a P-side quantum barrier region (7) on both sides. The N-side quantum barrier region (5) and the P-side quantum barrier region (7) are made of the same semiconductor material. The N-side quantum barrier region (5) and the P-side quantum barrier region (7) simultaneously regulate the carrier confinement capability and light field distribution of the laser. The N-side quantum barrier region (5) and the P-side quantum barrier region (7) may have different thicknesses, and may also have different material component distribution forms or different material component sizes. The thickness, material component distribution form, and material component size of the N-side quantum barrier region (5) and the P-side quantum barrier region (7) may have at least one different physical parameter.

2. An asymmetric quantum barrier semiconductor laser as claimed in claim 1, characterized in that: The active region (6) contains active material and provides gain for the laser; An N-side quantum barrier region (5) located on the N-type waveguide region (4) to block the leakage of holes; The P-side quantum barrier region (7) is located on the active region (6) to block the leakage of electrons.

3. An asymmetric quantum barrier semiconductor laser as claimed in claim 2, characterized in that: Also includes: An N-type side electrode (1) forms an electric injection channel for the laser; An N-type substrate region (2) located on the N-type side electrode (1) to support the semiconductor chip; An N-type limiting region (3) located on the N-type substrate region (2) to limit the expansion of the light field; An N-type waveguide region (4) located on the N-type confinement region (3) to achieve expansion of the light field; A P-type waveguide region (8) is located on the P-side quantum barrier region (7) to appropriately expand the light field; A P-type confinement region (9), located on the P-type waveguide region (8) to limit the expansion of the light field; A P-type contact region (10) is located on the P-type confinement region (9) to form an ohmic contact with the P-type side electrode (12); An insulating region (11), located on the contact region (10), to limit the current injection channel on the P side; The P-type side electrode (12) is located on the insulating region (11) and the contact region (10), and forms a current injection channel on the P side.

4. An asymmetric quantum barrier semiconductor laser as claimed in claim 1, characterized in that: The N-side quantum barrier region (5) and the P-side quantum barrier region (7) can be extended to a situation where the two are made of different materials.

5. An asymmetric quantum barrier semiconductor laser as claimed in claim 3, characterized in that: The N-type substrate region (2), N-type confinement region (3), N-type waveguide region (4), N-side quantum barrier region (5), active region (6), P-side quantum barrier region (7), P-type waveguide region (8), P-type confinement region (9), and P-type contact region (10) are all semiconductor laser materials, and are in the form of single-layer, multi-layer, or gradient material distribution.

6. The asymmetric quantum barrier semiconductor laser according to claim 1, characterized in that: The ridge region of the asymmetric quantum barrier semiconductor laser is formed by dry etching or wet etching to an N-type confinement region (3) or an N-type waveguide region (4).

7. The asymmetric quantum barrier semiconductor laser according to claim 1, characterized in that: The pumping mode of asymmetric quantum barrier semiconductor lasers is electrical pumping or optical pumping.

8. Use of the asymmetric quantum barrier semiconductor laser according to any one of claims 1 to 7 in the field of semiconductor lasers.

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