Package carrier plate preparation method, package carrier plate and electronic device

Abstract

The invention is suitable for the technical field of package carrier boards, and provides a preparation method of a package carrier board, the package carrier board and a PCB, the preparation method of the package carrier board comprises the following steps: providing a glass substrate, the glass substrate comprising a first surface and a plurality of TGV holes arranged on the glass substrate; forming a conductive layer on the first surface, wherein the conductive layer comprises a first part formed on the first surface and a second part filled in the TGV hole; removing the first part; and preparing an RDL layer on the first surface. The first part in the conductive layer is removed, and only the second part is reserved to be coupled with the RDL layer, so that the material consumption of the conductive layer is reduced, the overall thickness of the package substrate is reduced, and the miniaturization design requirement of the package substrate is met. And after the second part is removed, a circuit can be prevented from being etched on the thicker conductive layer, and the process difficulty is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of packaging carrier boards, and in particular relates to a packaging carrier board preparation method, a packaging carrier board and a PCB board. Background Art

[0002] The chip needs to be installed on the PCB board to work properly. Since the chip has many connecting pins, these pins are densely distributed on the surface of the chip, and the pins of the circuits on the PCB board cannot be as dense as the connecting pins of the chip, resulting in the chip being unable to be directly coupled and connected with the circuits of the PCB circuit. Therefore, it is necessary to use a packaging carrier to realize the electrical connection between the chip and the PCB circuit. The packaging carrier is provided with pins corresponding to the pins of the chip one by one to couple with the chip. At the same time, the side of the packaging carrier close to the PCB board has relatively sparse pins, which can be electrically connected with the circuits on the PCB board.

[0003] The existing package carrier is composed of a glass substrate and several RDL layers, wherein the RDL layer has several conductive metal layers, which are coupled with metal pillars in the glass substrate. After the glass substrate is perforated, the holes are filled with electroplating to form metal pillars. At the same time, the electroplating method will also generate a metal layer on the surface of the glass substrate. Since the metal layer on the surface of the glass substrate is relatively thick, the thickness of the package carrier is increased, which is not conducive to the miniaturization of the package carrier. Summary of the invention

[0004] The embodiment of the present application provides a method for preparing a packaging carrier, aiming to solve the problems of high cost and large thickness of the existing packaging carrier.

[0005] The embodiment of the present application is implemented by providing a method for preparing a packaging carrier, comprising:

[0006] Providing a glass substrate, the glass substrate comprising a first surface and a plurality of TGV holes disposed on the glass substrate;

[0007] forming a conductive layer on the first surface, the conductive layer comprising a first portion formed on the first surface and a second portion filled in the TGV hole;

[0008] Remove the first part;

[0009] An RDL layer is prepared on the first surface.

[0010] Further, the step of forming a conductive layer on the first surface includes:

[0011] An insulating layer is provided on the first surface, wherein the insulating layer is provided with a plurality of perforations corresponding one to one with the TGV holes;

[0012] forming a conductive layer on a side of the insulating layer away from the glass substrate, so that the first portion is formed on the side of the insulating layer away from the glass substrate, and the second portion is formed in the TGV hole and the through hole;

[0013] The steps for removing the first part include:

[0014] The insulating layer is removed to remove the first portion.

[0015] Further, the diameter of the perforation is larger than the diameter of the TGV hole.

[0016] Furthermore, before the step of preparing the RDL layer on the first surface, the preparation method further comprises:

[0017] A pi layer is disposed on the first surface, and the pi layer constitutes a dielectric layer in the RDL layer.

[0018] Furthermore, the pi layer is provided with a plurality of through holes corresponding to the TGV holes one by one, and a conductive material is provided in the through holes, and the conductive material is used to electrically connect the RDL layer and the second part.

[0019] Further, the step of providing a pi layer on the first surface includes:

[0020] Coating a layer of pi material on the first surface;

[0021] curing the pi material to form a pi layer;

[0022] Laser drilling is performed on the pi layer to form perforations.

[0023] Further, the step of providing a pi layer on the first surface includes:

[0024] A pi film is attached to the first surface.

[0025] In a second aspect, the present application provides a packaging carrier, which is prepared by the packaging carrier preparation method as described above.

[0026] In a third aspect, the present application provides a packaging substrate, including:

[0027] A glass substrate comprising a first surface and a plurality of TGV holes disposed on the first surface;

[0028] Conductive connection structure, filled in the TGV hole;

[0029] The RDL layer is disposed on the first surface, and the RDL layer is electrically connected to the conductive connection structure.

[0030] In a fourth aspect, the present application provides a circuit board, comprising:

[0031] PCB board; and

[0032] The packaging substrate as described above;

[0033] The package carrier is arranged on the PCB board so that the circuits of the package carrier are coupled with the circuits of the PCB board.

[0034] Beneficial effects of the present application: The method for preparing a package carrier provided by the present application includes providing a glass substrate, the glass substrate including a first surface and a plurality of TGV holes provided on the glass substrate; forming a conductive layer on the first surface, the conductive layer including a first portion formed on the first surface and a second portion filled in the TGV holes; removing the first portion; and preparing an RDL layer on the first surface. By removing the first portion of the conductive layer and retaining only the second portion to couple with the RDL layer, the overall thickness of the package carrier is reduced, meeting the miniaturization design requirements of the package carrier. After removing the second portion, etching of circuits on a thicker conductive layer can be avoided, reducing the difficulty of the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic flow chart of an embodiment of a method for preparing a packaging carrier provided by the present application;

[0036] Figure 2 It is a structural schematic diagram of the manufacturing process of an embodiment of the method for preparing a packaging carrier provided by the present application;

[0037] Figure 3 It is a structural schematic diagram of the manufacturing process of another embodiment of the method for preparing a packaging carrier provided by the present application;

[0038] Figure 4 It is a structural schematic diagram of an embodiment of a packaging carrier provided in the present application.

[0039] Explanation of reference numerals: 100 - glass substrate, 110 - TGV hole, 200 - RDL layer, 300 - conductive layer, 310 - first part, 320 - second part, 400 - glue layer, 410 - conductive column, 500 - PCB board. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. Examples of embodiments are shown in the accompanying drawings, in which the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application. In addition, it should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0041] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "left", "right", "horizontal", "top", "bottom", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0042] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0043] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0044] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0045] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference values ​​and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0046] The preparation method of the package carrier provided in the present application includes providing a glass substrate, the glass substrate includes a first surface and a plurality of TGV holes provided on the glass substrate; forming a conductive layer on the first surface, the conductive layer includes a first portion formed on the first surface and a second portion filled in the TGV holes; removing the first portion; and preparing an RDL layer on the first surface. By removing the first portion of the conductive layer and retaining only the second portion to couple with the RDL layer, the material used for the conductive layer is reduced while reducing the overall thickness of the package carrier, thereby meeting the miniaturization design requirements of the package carrier. After removing the second portion, etching of circuits on a thicker conductive layer can be avoided, thereby reducing the difficulty of the process.

[0047] like Figures 1 to 4 As shown, one embodiment of the present application provides a method for preparing a packaging carrier, comprising:

[0048] S1100, providing a glass substrate 100, wherein the glass substrate 100 comprises a first surface and a plurality of TGV holes 110 disposed on the glass substrate 100;

[0049] The glass substrate 100 is the base of the package carrier, and is used to carry the RDL layer 200. In practice, the glass substrate 100 in the present application is an example of the embodiment of the present application, rather than a specific limitation of the present application. In other embodiments, the base of the package carrier may also be other insulating substrates, such as a ceramic substrate or a silicon substrate, etc., without specific limitation.

[0050] In some embodiments, the glass substrate 100 may be a rectangular plate structure, such as Figure 2 Of course, the glass substrate 100 may also be a circular, irregular or other shaped plate structure, without specific limitation.

[0051] As a possible implementation, the thickness of the glass substrate 100 ranges from 5 μm to 10 mm. Preferably, the thickness of the glass substrate 100 ranges from 200 μm to 500 μm. For example, the thickness of the glass substrate 100 ranges from 250 μm, 300 μm, 350 μm, 400 μm or 450 μm, etc., without limitation.

[0052] The glass substrate 100 is provided with a TGV hole 110 (Through Glass Via), which is a vertical electrical interconnection through hole that passes through the glass substrate 100, so that the circuits or components on both sides of the glass substrate 100 can be electrically connected through the TGV hole 110. Figure 2 and Figure 3 As shown in (b) in .

[0053] S1200 , forming a conductive layer 300 on a first surface, wherein the conductive layer 300 includes a first portion 310 formed on the first surface and a second portion 320 filled in the TGV hole 110 ;

[0054] The conductive layer 300 is prepared by electroplating, sputtering or evaporation, for example, the conductive layer 300 can be prepared by PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition) or PCVD (Plasma Chemical Vapor Deposition).

[0055] The conductive layer 300 includes a first portion 310 and a second portion 320. Figure 2 and Figure 3 As shown in (c) in the figure. For example, taking the preparation of the conductive layer 300 by electroplating as an example, during the electroplating process, part of the metal is filled in the TGV hole 110 to form the second part 320, and at the same time, part of the metal is inevitably formed on the first surface to obtain the first part 310. The conductive layer 300 is made of metal or other conductive materials, such as a copper layer, an aluminum layer, a conductive plastic or a conductive rubber; for example, the conductive rubber is glass silver-plated, aluminum silver-plated or silver-plated conductive particles are evenly distributed in the silicone rubber, and the conductive particles are contacted by pressure to achieve a good conductive effect.

[0056] S1300, removing the first portion 310;

[0057] After the conductive layer 300 is prepared, the first portion 310 is further removed. Figure 2 and Figure 3 As shown in (d) in FIG. 3 , for example, the conductive layer 300 is removed by chemical dissolution using a specific chemical reagent. For example, a strong acid or a strong oxidant is used to destroy the bonding force between the conductive layer 300 and the glass substrate 100, and by controlling the concentration and reaction time of the chemical reagent, only the first portion 310 is removed and the second portion 320 is retained.

[0058] As a possible implementation, the first portion 310 may also be removed by mechanical grinding or electrochemical method, which will not be described in detail.

[0059] S1400 , preparing an RDL layer 200 on the first surface.

[0060] After removing the first portion 310, an RDL (Redistribution Layer) layer is further prepared on the first surface of the glass substrate 100, such as Figure 2 As shown in (e) in FIG. 2 . The RDL layer 200 is a rewiring metal interconnect layer, which achieves optimal use of pads and circuits through rewiring to achieve a more compact package design. The RDL layer generally includes multiple dielectric layers and metal circuit layers formed between the dielectric layers. Each dielectric layer has a via and a metal material connecting the upper and lower metal circuit layers and filling the via.

[0061] When preparing the RDL layer, the dielectric layer is prepared layer by layer, and each time a dielectric layer is prepared, a metal circuit layer is prepared. Exemplarily, the steps of forming the RDL layer include:

[0062] A first dielectric layer is formed on the first surface. The dielectric layer has insulating properties. For example, the dielectric layer may be a PI layer (Polyimide Film). The PI layer is a high-performance film material with excellent heat resistance, mechanical properties and electrical insulation properties.

[0063] Then, a window is opened on the first dielectric layer, the window corresponding to the TGV hole, and a hole filling process is performed at the window, and a conductive material, such as a first metal column, is filled, and one end of the first metal column is electrically connected to the second part in the TGV hole.

[0064] Then, a first metal circuit layer is prepared on the first dielectric layer, and the first metal circuit layer is electrically connected to the second end of the first metal column.

[0065] Next, a second dielectric layer is formed on the first dielectric layer, and then a window is opened on the second dielectric layer, and the window position is set according to the wiring requirements. After the window is opened, a conductive material is filled to form a second metal column, and one end of the second metal column is electrically connected to the first metal line layer.

[0066] Then, a second metal circuit layer is prepared on the second dielectric layer, and the second metal circuit layer is electrically connected to the second end of the second metal column.

[0067] The above steps are repeated to prepare multiple dielectric layers and metal circuit layers to form an RDL layer.

[0068] In some embodiments, after the RDL layer 200 is prepared, the conductive wires in the RDL layer 200 (i.e., the metal pillars or metal circuit layers described above) are coupled to the second portion 320. In subsequent use, the conductive wires in the RDL layer 200 can also be used to couple with semiconductor elements (e.g., chips), and the second portion 320 is coupled with a PCB (Printed Circuit Board) or other electronic modules, components, etc., which will not be described in detail.

[0069] The preparation method of the package carrier provided in the present application includes providing a glass substrate 100, the glass substrate 100 includes a first surface and a plurality of TGV holes 110 provided on the first surface; forming a conductive layer 300 on the first surface, the conductive layer 300 includes a first portion 310 formed on the first surface and a second portion 320 filled in the TGV hole 110; removing the first portion 310; and preparing an RDL layer 200 on the first surface. By removing the first portion 310 in the conductive layer 300 and retaining only the second portion 320 to couple with the RDL layer 200, the material used in the conductive layer 300 is reduced while reducing the overall thickness of the package carrier, thereby meeting the miniaturization design requirements of the package carrier. After removing the second portion 320, etching of circuits on the thicker conductive layer 300 can be avoided, thereby reducing the process difficulty.

[0070] In some optional embodiments, the step of forming a conductive layer 300 on the first surface includes:

[0071] An insulating layer is disposed on the first surface, wherein the insulating layer is provided with a plurality of through holes corresponding to the TGV holes 110 one by one;

[0072] The conductive layer 300 is formed on one side of the insulating layer away from the glass substrate 100 , so that the first portion 310 is formed on the side of the insulating layer away from the glass substrate 100 , and the second portion 320 is formed in the TGV hole 110 and the through hole.

[0073] In implementation, the insulating layer can be made of an insulating material, which is a material that is not conductive under an allowable voltage. For example, the insulating layer can be made of rubber, PE (Polyethylene) material, PI material or PVC (Polyvinyl chloride) material. The insulating layer can be made by spraying on a coating method, for example, a layer of insulating material is coated on a first surface, and then the coated insulating material is cured to form an insulating layer. A plurality of perforations are provided on the insulating layer, for example, laser drilling is performed on the insulating layer to form perforations, and these perforations correspond to the TGV holes 110 one by one, so that the second portion 320 of the conductive layer 300 is formed in the perforations of the insulating layer and the TGV holes 110.

[0074] When the second portion 320 is formed, the first portion 310 is also formed on the side of the insulating layer away from the glass substrate 100. Therefore, when removing the first portion 310, the insulating layer can be removed to directly remove the first portion 310 and only retain the second portion 320. Removing the first portion 310 by removing the insulating layer is easier than removing the first portion 310 alone, which reduces the difficulty and improves production efficiency.

[0075] In some embodiments, the diameter of the perforation of the insulating layer is larger than the diameter of the TGV hole 110, so that the diameter of the portion of the second portion 320 corresponding to the perforation is larger than the diameter of the portion of the second portion 320 corresponding to the TGV hole 110. When the first portion 310 and the insulating layer are removed, part of the metal above the TGV hole of the glass substrate 100 can be retained, which can be better connected with the RDL layer 200. In other words, after the RDL layer 200 is prepared, the structure of the package carrier is the RDL layer 200 and the glass substrate 100 from top to bottom. Of course, in some possible embodiments, when the first portion 310 and the insulating layer are removed, part of the metal above the TGV hole may not be retained, and there is no limitation. It only needs to be coupled with the RDL layer 200, and no further description will be given.

[0076] In some possible embodiments, before the step of preparing the RDL layer 200 on the first surface, the preparation method provided by the present application further includes:

[0077] A pi layer is arranged on the first surface. The pi layer can refer to the above-mentioned dielectric layer and will not be described in detail.

[0078] In some embodiments, the pi layer is a mature pi film, and the side thereof bonded to the first surface has an adhesive layer, or if there is no adhesive layer, a layer of adhesive layer can be coated on the first surface and then the pi film can be bonded to the first surface.

[0079] Furthermore, the pi layer can also be directly formed on the first surface, and the step of providing a pi layer on the first surface includes:

[0080] Coating a layer of pi material on the first surface, where the pi material is a polyimide material;

[0081] curing the pi material to form a pi layer;

[0082] Laser drilling is performed on the pi layer to form perforations.

[0083] The pi layer is provided with a plurality of through holes corresponding to the TGV holes 110 one by one, and a conductive material is provided in the through holes, and the conductive material is used to electrically connect the RDL layer 200 and the second part 320 .

[0084] During implementation, after providing the glass substrate 100, a pi layer is first prepared on the first surface of the glass substrate 100. The pi layer can be regarded as an adhesion layer. The pi layer can better receive (prepare) the RDL layer 200 on the pi layer, and the structure is stable and reliable, thereby improving product quality. Moreover, making the RDL layer on the pi layer is a mature process, which reduces the difficulty of product process.

[0085] A plurality of through holes may be provided on the pi layer, and the through holes are filled with a conductive material. For example, the conductive material in the through holes is a conductive column 410, and these through holes correspond to the TGV holes 110 on the glass substrate 100 one by one, so that these conductive columns 410 are coupled and electrically connected with the second portion 320 located in the TGV hole 110 one by one, and then these conductive columns 410 are coupled with the RDL layer 200, so as to realize the coupled electrical connection between the RDL layer 200 and the second portion 320, as shown in FIG. Figure 3 As shown in (e) and (f) in .

[0086] Furthermore, after the step of providing the glass substrate 100, the preparation method provided by the present application further includes:

[0087] The first surface of the glass substrate 100 is cleaned with plasma.

[0088] Plasma, also known as plasma, is an ionized gaseous substance composed of positive and negative ions generated by the ionization of atoms and atomic groups after some electrons have been deprived. The functions of plasma cleaning mainly include surface cleaning, surface activation, surface roughening and etching, coating deposition, etc. Plasma cleaning technology achieves the purpose of cleaning, activation, modification, etc. by using the active components of plasma (such as ions, electrons, atoms, active groups, etc.) to react with the first surface.

[0089] In some embodiments, plasma cleaning can effectively remove organic pollutants and oxides on the first surface of the glass substrate 100. Compared with conventional wet cleaning methods, plasma cleaning does not leave residues on the surface, can achieve thorough cleaning, and obtain a surface with ultra-high cleanliness.

[0090] After plasma treatment, the first surface will form groups such as C=O carbonyl, -CO OH carboxyl and -OH hydroxyl, which have stable hydrophilic functions and can enhance the adhesion and coating effect of the first surface. At the same time, plasma treatment can cause active atoms, free radicals and unsaturated bonds to appear on the polymer surface, increase the surface energy, thereby enhancing the adhesion, cohesion and tension of the first surface, thereby making the RDL layer 200 better bonded to the first surface, or making the pi layer better bonded to the first surface.

[0091] In addition, the plasma only acts on the nanoscale surface of the material and will not change the original properties of the glass substrate 100, thus ensuring product stability.

[0092] In some embodiments, the present application provides a packaging carrier, which is prepared by the packaging carrier preparation method as described above.

[0093] Technicians in the relevant field can clearly understand that for the convenience and brevity of description, the structure, preparation method flow and implementation principle of the packaging carrier described above can refer to the corresponding structure, preparation method flow and implementation principle in the aforementioned embodiments, and will not be repeated here.

[0094] The preparation method of the package carrier provided in the present application includes providing a glass substrate 100, the glass substrate 100 includes a first surface and a plurality of TGV holes 110 provided on the first surface; forming a conductive layer 300 on the first surface, the conductive layer 300 includes a first portion 310 formed on the first surface and a second portion 320 filled in the TGV hole 110; removing the first portion 310; and preparing an RDL layer 200 on the first surface. By removing the first portion 310 in the conductive layer 300 and retaining only the second portion 320 to couple with the RDL layer 200, the material used in the conductive layer 300 is reduced while reducing the overall thickness of the package carrier, thereby meeting the miniaturization design requirements of the package carrier. After removing the second portion 320, etching of circuits on the thicker conductive layer 300 can be avoided, thereby reducing the process difficulty.

[0095] In some embodiments, the present application provides a packaging carrier, including:

[0096] The glass substrate 100 includes a first surface and a plurality of TGV holes 110 disposed on the first surface;

[0097] A conductive connection structure filled in the TGV hole 110;

[0098] The RDL layer 200 is disposed on the first surface, and the RDL layer 200 is electrically connected to the conductive connection structure.

[0099] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the structure and implementation principle of the packaging carrier described above can refer to the corresponding structure and implementation principle in the aforementioned embodiments, wherein the conductive link structure, i.e. the above-mentioned second part 320, will not be repeated here.

[0100] The preparation method of the package carrier provided in the present application includes providing a glass substrate 100, the glass substrate 100 includes a first surface and a plurality of TGV holes 110 provided on the first surface; forming a conductive layer 300 on the first surface, the conductive layer 300 includes a first portion 310 formed on the first surface and a second portion 320 filled in the TGV hole 110; removing the first portion 310; and preparing an RDL layer 200 on the first surface. By removing the first portion 310 in the conductive layer 300 and retaining only the second portion 320 to couple with the RDL layer 200, the material used in the conductive layer 300 is reduced while reducing the overall thickness of the package carrier, thereby meeting the miniaturization design requirements of the package carrier. After removing the second portion 320, etching of circuits on the thicker conductive layer 300 can be avoided, thereby reducing the process difficulty.

[0101] In some embodiments, Figure 4 As shown, the present application provides a circuit board, comprising:

[0102] PCB board; and

[0103] The packaging substrate as described above;

[0104] The package carrier is arranged on the PCB board so that the circuits of the package carrier are coupled with the circuits of the PCB board.

[0105] During implementation, the circuit board provided by the present application is applied to common electronic devices on the market. For example, the electronic device can be some consumer electronic products, communication electronic products, medical equipment, automotive electronics, smart electronic products and other terminal devices. The electronic device can also be a semi-finished device such as a power supply device, a radio frequency device, and a filter device, without specific limitation.

[0106] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the structure and implementation principle of the circuit board described above can refer to the corresponding structure and implementation principle in the aforementioned embodiments, and will not be repeated here.

[0107] The preparation method of the package carrier provided in the present application includes providing a glass substrate 100, the glass substrate 100 includes a first surface and a plurality of TGV holes 110 provided on the first surface; forming a conductive layer 300 on the first surface, the conductive layer 300 includes a first portion 310 formed on the first surface and a second portion 320 filled in the TGV hole 110; removing the first portion 310; and preparing an RDL layer 200 on the first surface. By removing the first portion 310 in the conductive layer 300 and retaining only the second portion 320 to couple with the RDL layer 200, the material used in the conductive layer 300 is reduced while reducing the overall thickness of the package carrier, thereby meeting the miniaturization design requirements of the package carrier. After removing the second portion 320, etching of circuits on the thicker conductive layer 300 can be avoided, thereby reducing the process difficulty.

[0108] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for preparing a packaging carrier, characterized in that: include: Providing a glass substrate, the glass substrate comprising a first surface and a plurality of TGV holes disposed on the glass substrate; forming a conductive layer on the first surface, the conductive layer comprising a first portion formed on the first surface and a second portion filled in the TGV hole; removing the first portion; An RDL layer is prepared on the first surface.

2. The method for preparing a packaging carrier according to claim 1, characterized in that: The step of forming a conductive layer on the first surface comprises: An insulating layer is provided on the first surface, wherein the insulating layer is provided with a plurality of through holes corresponding one to one to the TGV holes; forming the conductive layer on a side of the insulating layer away from the glass substrate, so that the first portion is formed on the side of the insulating layer away from the glass substrate, and the second portion is formed in the TGV hole and the through hole; The step of removing the first portion comprises: The insulating layer is removed to remove the first portion.

3. The method for preparing a packaging carrier according to claim 2, characterized in that: The diameter of the perforation is greater than the diameter of the TGV hole.

4. The method for preparing a packaging carrier according to claim 1, characterized in that: Before the step of preparing the RDL layer on the first surface, the preparation method further includes: A pi layer is disposed on the first surface, and the pi layer constitutes a dielectric layer in the RDL layer.

5. The method for preparing a packaging carrier according to claim 4, characterized in that: The pi layer is provided with a plurality of through holes corresponding to the TGV holes one by one, and a conductive material is provided in the through holes, and the conductive material is used to electrically connect the RDL layer and the second part.

6. The method for preparing a packaging carrier according to claim 5, characterized in that: The step of providing a pi layer on the first surface comprises: Coating a layer of pi material on the first surface; Solidifying the pi material to form the pi layer; Laser drilling is performed on the pi layer to form the perforations.

7. The method for preparing a packaging carrier according to claim 5, characterized in that: The step of providing a pi layer on the first surface comprises: A pi film is attached to the first surface.

8. A packaging carrier, characterized in that: The packaging carrier is prepared by the packaging carrier preparation method according to any one of claims 1 to 7.

9. A packaging carrier, comprising: A glass substrate comprising a first surface and a plurality of TGV holes disposed on the first surface; A conductive connection structure filled in the TGV hole; An RDL layer is disposed on the first surface, and the RDL layer is electrically connected to the conductive connection structure.

10. An electronic device, characterized in that: include: PCB board; as well as The packaging carrier as claimed in claim 9; The package carrier is arranged on the PCB board, and the circuit of the package carrier is coupled with the circuit of the PCB board.

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