Method for manufacturing a display device

Abstract

A method for manufacturing a display device is provided. The method includes: providing a first inorganic layer on a substrate; providing a reflector on the first inorganic layer; providing a second inorganic layer on the reflector; and providing an organic light emitting diode on the second inorganic layer, wherein providing the reflector includes: forming a groove portion in the first inorganic layer; providing a reflective layer on the first inorganic layer to cover the first inorganic layer; and polishing the reflective layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0132701, filed on October 5, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] One or more embodiments relate to a method, and more particularly, to a method of manufacturing a display device. Background Art

[0004] Electronic devices based on mobility are widely used. Recently, tablet personal computers in addition to small electronic devices such as mobile phones have been widely used as mobile electronic devices.

[0005] Mobile electronic devices include display devices for providing visual information such as images to users in order to support various functions. Recently, as other components for driving display devices have been miniaturized, the proportion of display devices in electronic devices has gradually increased, and structures that are bendable at a certain angle from a flat state have been developed. Summary of the invention

[0006] One or more embodiments are directed to processing a reflector including a silver material by using a damascene method.

[0007] Additional aspects will be set forth in the description which follows and will be apparent from the description.

[0008] According to one or more embodiments, a method for manufacturing a display device includes: disposing a first inorganic layer on a substrate; disposing a reflector on the first inorganic layer; disposing a second inorganic layer on the reflector, and disposing an organic light emitting diode on the second inorganic layer; wherein disposing the reflector includes: forming a groove portion in the first inorganic layer; disposing a reflective layer on the first inorganic layer to cover the first inorganic layer; and polishing the reflective layer.

[0009] In an embodiment, providing the reflector may further include: providing an adhesive layer on the first inorganic layer to cover the first inorganic layer, wherein providing the reflector includes: providing a reflective layer on the adhesive layer.

[0010] In an embodiment, the adhesive layer may contact an inner peripheral surface of the groove portion.

[0011] In an implementation, the reflector may include a silver (Ag) material.

[0012] In an embodiment, the reflector may include: a first reflector; a second reflector spaced apart from the first reflector; and a third reflector spaced apart from the first reflector and the second reflector, wherein the organic light emitting diode includes: a first organic light emitting diode overlapping with the first reflector; a second organic light emitting diode overlapping with the second reflector; and a third organic light emitting diode overlapping with the third reflector.

[0013] In an embodiment, setting a second inorganic layer may include: setting a 2-1 inorganic layer on the reflector; setting a 2-2 inorganic layer on the 2-1 inorganic layer; and setting a 2-3 inorganic layer on the 2-2 inorganic layer, wherein a first organic light emitting diode is set on the 2-1 inorganic layer, a second organic light emitting diode is set on the 2-2 inorganic layer, and a third organic light emitting diode is set on the 2-3 inorganic layer.

[0014] In an embodiment, providing the second inorganic layer may further include: etching portions of the 2-2 inorganic layer and the 2-3 inorganic layer overlapping the first reflector; and etching a portion of the 2-3 inorganic layer overlapping the second reflective layer.

[0015] In an embodiment, each of the etching of the portions of the 2-2 inorganic layer and the 2-3 inorganic layer and the etching of the portion of the 2-3 inorganic layer may include a photolithography process.

[0016] In an embodiment, a distance from the first reflector to the first organic light emitting diode, a distance from the second reflector to the second organic light emitting diode, and a distance from the third reflector to the third organic light emitting diode may increase in sequence.

[0017] In an embodiment, the 2-1 inorganic layer and the 2-2 inorganic layer may include different materials.

[0018] In an embodiment, the 2-2 inorganic layer and the 2-3 inorganic layer may include different materials.

[0019] In an embodiment, the first organic light emitting diode may emit red light, the second organic light emitting diode may emit green light, and the third organic light emitting diode may emit blue light.

[0020] According to one or more embodiments, a method for manufacturing a display device includes: disposing a first inorganic layer on a substrate; disposing a first reflector, a second reflector, and a third reflector spaced apart from each other on the first inorganic layer; disposing a 2-1 inorganic layer on the first reflector, the second reflector, and the third reflector; disposing a 2-2 inorganic layer on the 2-1 inorganic layer; disposing a 2-3 inorganic layer on the 2-2 inorganic layer; etching portions of the 2-2 inorganic layer and the 2-3 inorganic layer overlapping with the first reflector; etching a portion of the 2-3 inorganic layer overlapping with the second reflective layer; disposing a first organic light emitting diode on the 2-1 inorganic layer to overlap with the first reflector; disposing a second organic light emitting diode on the 2-2 inorganic layer to overlap with the second reflector; and disposing a third organic light emitting diode on the 2-3 inorganic layer to overlap with the third reflector.

[0021] In an embodiment, a distance from the first reflector to the first organic light emitting diode, a distance from the second reflector to the second organic light emitting diode, and a distance from the third reflector to the third organic light emitting diode may increase in sequence.

[0022] In an embodiment, the 2-1 inorganic layer and the 2-2 inorganic layer may include different materials.

[0023] In an embodiment, the 2-2 inorganic layer and the 2-3 inorganic layer may include different materials.

[0024] In an embodiment, the first organic light emitting diode may emit red light, the second organic light emitting diode may emit green light, and the third organic light emitting diode may emit blue light.

[0025] In an embodiment, an adhesive layer may be disposed between the first inorganic layer and the first reflector, between the first inorganic layer and the second reflector, and between the first inorganic layer and the third reflector.

[0026] In an implementation, each of the first reflector, the second reflector, and the third reflector may include a silver (Ag) material.

[0027] In an embodiment, each of the etching of the portions of the 2-2 inorganic layer and the 2-3 inorganic layer and the etching of the portion of the 2-3 inorganic layer may include a photolithography process.

[0028] Other aspects, features, and advantages of the present invention will become more apparent from the accompanying drawings, claims, and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features and advantages of certain embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1is a schematic plan view of a display device according to an embodiment;

[0031] Figure 2 is an equivalent circuit diagram illustrating one pixel included in a display device according to an embodiment;

[0032] Figure 3 is a cross-sectional view illustrating a display device according to an embodiment;

[0033] Figure 4 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0034] Figure 5 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0035] Figure 6 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0036] Figure 7 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0037] Figure 8 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0038] Fig. 9 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0039] Fig.10 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0040] Fig.11 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0041] Fig.12 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0042] Fig.13 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment;

[0043] Fig.14 is a schematic cross-sectional view illustrating a portion of a display device according to an embodiment; and

[0044] Fig.15 is a schematic flowchart illustrating a method of manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0045] The embodiments of the invention will now be described in detail with reference to the examples thereof illustrated in the accompanying drawings, in which similar reference numerals refer to similar elements throughout. In this respect, the invention may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the figures to illustrate the aspects of this description. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. Throughout this disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0046] Since the present disclosure allows various changes and many embodiments, certain embodiments will be illustrated in the drawings and described in the detailed description. The effects and features of the present invention and methods for achieving them will be explained with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the following embodiments and can be embodied in various forms.

[0047] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings, wherein the same or corresponding elements are denoted by the same reference numerals throughout and repeated descriptions thereof are omitted.

[0048] Although the terms “first”, “second”, etc. may be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element.

[0049] As used herein, the singular forms "one", "an" and "the" are intended to also include plural forms, unless the context clearly indicates otherwise. The terms used herein are only for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "one", "an" and "the" are intended to include plural forms including "at least one", unless the context clearly indicates otherwise. "At least one" is not interpreted as being limited to "one", "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It will also be understood that the terms "include" and / or "include" or "include" and / or "include" when used in this specification specify the presence of the features, regions, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0050] It will be understood that the terms “comprising” and “having” are intended to indicate the presence of the features or elements described in the specification, but are not intended to exclude the possibility that one or more other features or elements may be present or may be added.

[0051] It will also be understood that when a layer, region or component is referred to as being “on” another layer, region or component, it can be directly disposed on the other layer, region or component, or can be indirectly on the other layer, region or component with intervening layers, regions or components therebetween.

[0052] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures in the accompanying drawings is turned over, the element described as being on the "lower" side of the other elements will then be oriented to be on the "upper" side of the other elements. Therefore, depending on the specific orientation of the figure, the exemplary term "lower" can include both "lower" and "upper" orientations. Similarly, if the device in one of the figures in the accompanying drawings is turned over, the element described as being "below" or "below" the other elements will then be oriented to be "above" the other elements. Therefore, the exemplary terms "below" and "below" can include both above and below orientations.

[0053] For the convenience of explanation, the size of the components in the drawings may be exaggerated or reduced. For example, since the size and thickness of the elements in the drawings are arbitrarily illustrated for the convenience of explanation, the present disclosure is not limited thereto.

[0054] In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0055] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, areas, layers and / or sections, these elements, components, areas, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer or section from another element, component, area, layer or section. Therefore, without departing from the teachings herein, the "first element", "first component", "first area", "first layer" or "first section" discussed below may be referred to as a second element, second component, second area, second layer or second section.

[0056] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present invention belongs. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0057] When certain embodiments can be implemented differently, the specific process order may be different from the described order. For example, two processes described successively may be performed substantially simultaneously, or may be performed in the reverse order of the described order.

[0058] Figure 1 is a schematic plan view of a display device 1 according to an embodiment.

[0059] In an embodiment, the display device 1 may be any of various devices such as a smartphone, a tablet computer, a laptop computer, a television, or a billboard. The display device 1 includes a thin film transistor and a capacitor, and the thin film transistor and the capacitor may be implemented by a conductive layer and an insulating layer.

[0060] In an embodiment, the display device 1 includes a display area DA and a peripheral area PA disposed outside the display area DA. Figure 1 In the embodiment, the display area DA has a rectangular shape. However, the present invention is not limited thereto. The display area DA may have any one of various shapes such as a circular shape, an elliptical shape, a polygonal shape, or other specific shapes.

[0061] In an embodiment, a display area DA is a portion in which an image is displayed, and a plurality of pixels PX may be disposed in the display area DA. Each pixel PX may include a display device such as an organic light emitting diode. Each pixel PX may emit, for example, red light, green light, or blue light. The pixel PX may be connected to a pixel circuit including a thin film transistor and a storage capacitor. The pixel circuit may be connected to a scan line SL, a data line DL, and a drive voltage line PL, through which a scan signal is transmitted, through which the data line DL intersects the scan line SL and through which a data signal is transmitted, and through which a drive voltage is supplied by the drive voltage line PL. The scan line SL may extend in a first direction (e.g., an x-axis direction), and the data line DL and the drive voltage line PL may extend in a second direction (e.g., a y-axis direction) intersecting with the first direction (e.g., the x-axis direction).

[0062] In an embodiment, the pixel PX may emit light having a brightness corresponding to an electrical signal from a pixel circuit electrically connected to the pixel PX. The display area DA may display certain images by light emitted from the pixel PX. For reference, as described above, the pixel PX may be defined as an emission area that emits light of any one of red, green, and blue.

[0063] In an embodiment, the peripheral area PA may be a portion in which the pixels PX are not disposed and an image is not displayed. In the peripheral area PA, power wiring for driving the pixels PX may be disposed. In addition, in the peripheral area PA, pads may be disposed, and an integrated circuit device such as a driver IC or a printed circuit board including a driving circuit unit may be electrically connected to the plurality of pads.

[0064] In an embodiment, since the display device 1 includes the substrate 100 , the substrate 100 may include a display area DA and a peripheral area PA. The substrate 100 will be described in detail below.

[0065] In an embodiment, a plurality of transistors may be provided in the display area DA. Among the plurality of transistors, the first terminal of the transistor may be a source electrode or a drain electrode, and the second terminal may be an electrode different from the first terminal, depending on the type (N-type or P-type) of the transistor and / or operating conditions. For example, when the first terminal is a source electrode, the second terminal may be a drain electrode.

[0066] In an embodiment, the plurality of transistors may include a driving transistor, a data writing transistor, a compensation transistor, an initialization transistor, and an emission control transistor. The driving transistor may be connected between a driving voltage line PL and an organic light emitting diode OLED (see Figure 2 ) between the data lines DL and the driving transistor, and the data write transistor may be connected to the data line DL and the driving transistor and may perform a switching operation of transmitting a data signal transmitted through the data line DL.

[0067] In an embodiment, the compensation transistor may be turned on according to a scan signal received through the scan line SL to connect the driving transistor to the organic light emitting diode OLED and compensate for a threshold voltage of the driving transistor.

[0068] In an embodiment, the initialization transistor may be turned on according to a scan signal received through the scan line SL to transmit an initialization voltage to the gate electrode of the driving transistor and initialize the gate electrode of the driving transistor. The scan line SL connected to the initialization transistor may be a separate scan line different from the scan line SL connected to the compensation transistor.

[0069] In an embodiment, the emission control transistor may be turned on according to an emission control signal received through the emission control line so that a driving current flows through the organic light emitting diode OLED.

[0070] In an embodiment, the organic light emitting diode OLED may include a pixel electrode (anode) and an opposite electrode (cathode), and the opposite electrode may receive a second power voltage ELVSS (see Figure 2 ). The organic light emitting diode OLED may receive a driving current from the driving transistor to emit light and display an image.

[0071] Hereinafter, although the organic light-emitting display device is described as the display device 1 according to the embodiment, the display device 1 of the present invention is not limited thereto. In another embodiment, the display device 1 of the present invention may be an inorganic light-emitting display device or an inorganic electroluminescent (EL) display device or a quantum dot light-emitting display device. For example, the emission layer of the display device included in the display device 1 may include an organic material or an inorganic material. In addition, the display device 1 may include an emission layer and quantum dots arranged in the path of light emitted from the emission layer.

[0072] Figure 2 is an equivalent circuit diagram illustrating one pixel PX included in the display device 1 according to the embodiment.

[0073] In an embodiment and as Figure 2 As shown in FIG. 1 , each pixel PX includes a pixel circuit PC connected to a scan line SL and a data line DL and an organic light emitting diode OLED connected to the pixel circuit PC. The pixel circuit PC includes a driving thin film transistor Td, a switching thin film transistor Ts, and a storage capacitor Cst. The switching thin film transistor Ts is connected to the scan line SL and the data line DL, and transmits a data signal Dm input through the data line DL to the driving thin film transistor Td according to a scan signal Sn input through the scan line SL.

[0074] In an embodiment, the storage capacitor Cst is connected to the switching thin film transistor Ts and the driving voltage line PL, and stores a voltage corresponding to a difference between a voltage received from the switching thin film transistor Ts and a first power supply voltage ELVDD supplied to the driving voltage line PL. The second power supply voltage ELVSS may be a driving voltage having a level lower than that of the first power supply voltage ELVDD. The level of the driving voltage supplied to each pixel PX may be a difference between the level of the first power supply voltage ELVDD and the level of the second power supply voltage ELVSS.

[0075] In an embodiment, the driving thin film transistor Td may be connected to the driving voltage line PL and the storage capacitor Cst, and may control a driving current flowing from the driving voltage line PL through the organic light emitting diode OLED in response to a value of a voltage stored in the storage capacitor Cst. Due to the driving current, the organic light emitting diode OLED may emit light with a certain brightness.

[0076] Figure 3 is a cross-sectional view illustrating a display device 1 according to an embodiment.

[0077] In the embodiments and with reference to Figure 3The display device 1 may include a substrate 100, a buffer layer 101, a thin film transistor, a gate insulating film 102, an interlayer insulating film 103, a first inorganic layer 104, a reflector, a bonding member, a second inorganic layer 105, an organic light emitting diode, a pixel defining film 106 and a thin film encapsulation layer TFE.

[0078] In an embodiment, the substrate 100 may include any of a variety of flexible or bendable materials. For ultra-high resolution, the substrate 100 included in the display device 1 may include a semiconductor material, for example, a group IV semiconductor, a group III-V compound semiconductor, or a group II-VI compound semiconductor. The substrate 100 may include a silicon layer. That is, the substrate 100 may be a substrate 100 of a semiconductor including a semiconductor material. Therefore, an OLED display using a substrate 100 including a semiconductor material may be referred to as a silicon-based OLED (OLEDoS). OLEDoS may be mainly used for extended reality (XR) and may have an ultra-high definition of 8K or higher in a small area of ​​about 1 to 2 inches. When a semiconductor substrate 100 is used, pixels arranged at ultra-high resolution may be tightly controlled.

[0079] In an embodiment, the type of substrate 100 is not limited to a semiconductor substrate 100. For example, the substrate 100 may include glass, metal, or a polymer resin. In addition, the substrate 100 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. However, various modifications may be made. For example, the substrate 100 may have a multilayer structure including two layers each including a polymer resin and a barrier layer including an inorganic material (e.g., silicon oxide, silicon nitride, or silicon oxynitride) and located between the two layers.

[0080] In an embodiment, a buffer layer 101 may be disposed on the substrate 100. The buffer layer 101 may be used as a barrier layer and / or a blocking layer for preventing diffusion of impurity ions, preventing penetration of moisture or external air, and flattening the surface. The buffer layer 101 may include silicon oxide, silicon nitride, or silicon oxynitride. The buffer layer 101 may adjust a heat supply rate during a crystallization process for forming a semiconductor layer 110 described below so that the semiconductor layer 110 is uniformly crystallized.

[0081] For example, the thin film transistor may include a first thin film transistor TFTa, a second thin film transistor TFTb, and a third thin film transistor TFTc, but is not limited thereto. In an embodiment, the thin film transistor may be disposed on the buffer layer 101. A plurality of thin film transistors may be provided. For example, the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc may be disposed on the buffer layer 101 to be spaced apart from each other. Each of the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc may include a semiconductor layer 110, a gate layer 120, and a conductive layer 130, respectively.

[0082] In an embodiment, the semiconductor layer 110 may be disposed on the buffer layer 101. The semiconductor layer 110 may be formed of polysilicon and may include a channel region not doped with impurities and a source region and a drain region formed by doping impurities on both sides of the channel region. The impurities may vary according to the type of the thin film transistor and may be N-type impurities or P-type impurities.

[0083] In an embodiment, the gate insulating film 102 may be disposed on the semiconductor layer 110. The gate insulating film 102 may be an element for ensuring insulation between the semiconductor layer 110 and the gate layer 120. The gate insulating film 102 may include an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride, and may be disposed between the semiconductor layer 110 and the gate layer 120. In addition, the gate insulating film 102 may be formed to correspond to the entire surface of the substrate 100, and may have a structure in which a contact hole is formed at a preset portion. Therefore, the insulating film including an inorganic material may be formed by using chemical vapor deposition (CVD) or atomic layer deposition (ALD). This applies to the following embodiments and modifications thereof.

[0084] In an embodiment, the gate layer 120 may be disposed on the gate insulating film 102. The gate layer 120 may vertically overlap the semiconductor layer 110, and may include at least one metal of molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), titanium (Ti), tungsten (W), and copper (W).

[0085] In an embodiment, the interlayer insulating film 103 may be disposed on the gate layer 120. The interlayer insulating film 103 may cover the gate layer 120. The interlayer insulating film 103 may be formed of an inorganic material. For example, the interlayer insulating film 103 may be formed of a metal oxide or a metal nitride. In detail, the inorganic material may include silicon oxide (SiO 2 ), Silicon Nitride (SiN x), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZrO 2 In some embodiments, the interlayer insulating film 103 may have a SiO x / SiN y or SiN x / SiO y The double structure formed.

[0086] In an embodiment, the conductive layer 130 may be disposed on the interlayer insulating film 103. The conductive layer 130 may be used as an electrode connected to the source / drain region of the semiconductor layer 110 through a through hole formed in the interlayer insulating film 103. The conductive layer 130 may include at least one metal selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). For example, the conductive layer 130 may include a titanium layer, an aluminum layer, and / or a copper layer.

[0087] In an embodiment, the first inorganic layer 104 may be disposed on the conductive layer 130. The first inorganic layer 104 may cover an upper portion of the conductive layer 130 and may have a substantially flat top surface. The first inorganic layer 104 may be formed of an inorganic material. For example, the first inorganic layer 104 may be formed of a metal oxide or a metal nitride. In detail, the inorganic material may include silicon oxide (SiO 2 ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZrO 2 In some embodiments, the first inorganic layer 104 may have a SiO x / SiN y or SiN x / SiO y The double structure formed.

[0088] In an embodiment, the first inorganic layer 104 may include a groove portion. The groove portion may be recessed from the top surface of the first inorganic layer 104. For example, the groove portion may include a first groove portion GRa, a second groove portion GRb, and a third groove portion GRc, but is not limited thereto. The first groove portion GRa, the second groove portion GRb, and the third groove portion GRc may overlap with the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc, respectively. For example, the groove portion may have a quadrilateral cross-sectional shape. However, this is only an example, and the shape of the groove portion is not limited thereto.

[0089] In an embodiment, a plurality of groove portions may be provided. The number of groove portions may correspond to the number of thin film transistors. The first groove portion GRa, the second groove portion GRb, and the third groove portion GRc may be spaced apart from each other. The first groove portion GRa may correspond to the first thin film transistor TFTa, the second groove portion GRb may correspond to the second thin film transistor TFTb, and the third groove portion GRc may correspond to the third thin film transistor TFTc.

[0090] For example, the reflector may include a first reflector FLa, a second reflector FLb, and a third reflector FLc, but is not limited thereto. In an embodiment, the reflector may be disposed on the first inorganic layer 104. The reflector may include a material that reflects light. The reflector may include a metal material. For example, the reflector may include a silver (Ag) material. The first reflector FLa, the second reflector FLb, and the third reflector FLc may be accommodated in the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively. The shapes of the first reflector FLa, the second reflector FLb, and the third reflector FLc may correspond to the shapes of the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively. For example, when the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc have a quadrilateral cross-sectional shape, the first reflector FLa, the second reflector FLb, and the third reflector FLc may also have a quadrilateral cross-sectional shape, respectively. Therefore, the first, second, and third reflectors FLa, FLb, and FLc may contact bottom surfaces and inner peripheral surfaces of the first, second, and third groove portions GRa, GRb, and GRc, respectively.

[0091] A plurality of reflectors may be provided. The number of reflectors may correspond to the number of groove portions. For example, a first reflector FLa, a second reflector FLb, and a third reflector FLc may be disposed on the first inorganic layer 104. The first reflector FLa, the second reflector FLb, and the third reflector FLc may be spaced apart from each other. The first reflector FLa may be accommodated in the first groove portion GRa, the second reflector FLb may be accommodated in the second groove portion GRb, and the third reflector FLc may be accommodated in the third groove portion GRc.

[0092] The bonding member may include a first bonding member ADa, a second bonding member ADb, and a third bonding member ADc, but is not limited thereto. In an embodiment, the bonding member may be disposed on the first inorganic layer 104. The first bonding member ADa, the second bonding member ADb, and the third bonding member ADc may be accommodated in the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively. The first bonding member ADa, the second bonding member ADb, and the third bonding member ADc may be disposed between the first inorganic layer 104 and the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively. The first bonding member ADa, the second bonding member ADb, and the third bonding member ADc may contact the bottom surface and the inner peripheral surface of the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively. That is, the first bonding member ADa, the second bonding member ADb, and the third bonding member ADc may fill the space between the first inorganic layer 104 and the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively, and may respectively bond the first reflector FLa, the second reflector FLb, and the third reflector FLc to the first inorganic layer 104. In this case, the first reflector FLa, the second reflector FLb, and the third reflector FLc may indirectly contact the first inorganic layer 104 through the first bonding member ADa, the second bonding member ADb, and the third bonding member ADc, respectively. For example, the bonding member may be formed of an ITO material or a TiN material.

[0093] In an embodiment, a plurality of bonding members may be provided. The number of bonding members may correspond to the number of groove portions. For example, a first bonding member ADa, a second bonding member ADb, and a third bonding member ADc may be disposed on the first inorganic layer 104. The first bonding member ADa, the second bonding member ADb, and the third bonding member ADc may be spaced apart from each other. The first bonding member ADa may be accommodated in the first groove portion GRa, the second bonding member ADb may be accommodated in the second groove portion GRb, and the third bonding member ADc may be accommodated in the third groove portion GRc.

[0094] In an embodiment, the second inorganic layer 105 may be disposed on the first inorganic layer 104. The second inorganic layer 105 may cover the first inorganic layer 104 and upper portions of the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively. For example, the second inorganic layer 105 may be formed of a metal oxide or a metal nitride. In detail, the inorganic material may include silicon oxide (SiO 2 ), Silicon Nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZrO 2 In some embodiments, the second inorganic layer 105 may have a SiO x / SiN y or SiN x / SiO y The double structure formed.

[0095] In an embodiment, the second inorganic layer 105 may include a 2-1 inorganic layer 1051, a 2-2 inorganic layer 1052, and a 2-3 inorganic layer 1053. The 2-1 inorganic layer 1051 may be disposed on the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively, the 2-2 inorganic layer 1052 may be disposed on the 2-1 inorganic layer 1051, and the 2-3 inorganic layer 1053 may be disposed on the 2-2 inorganic layer 1052. The 2-2 inorganic layer 1052 may cover a portion of the 2-1 inorganic layer 1051, and the 2-3 inorganic layer 1053 may cover a portion of the 2-2 inorganic layer 1052.

[0096] In an embodiment, the 2-1 inorganic layer 1051 may overlap the first reflector FLa, the second reflector FLb, and the third reflector FLc, the 2-2 inorganic layer 1052 may overlap the second reflector FLb and the third reflector FLc, and the 2-3 inorganic layer 1053 may overlap the third reflector FLc. Figure 3 As shown in FIG. 1 , the 2-1 inorganic layer 1051 , the 2-2 inorganic layer 1052 , and the 2-3 inorganic layer 1053 may be arranged in a step shape.

[0097] In an embodiment, the 2-1 inorganic layer 1051 and the 2-2 inorganic layer 1052 may be formed of different materials, and the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 may be formed of different materials. For example, the 2-1 inorganic layer 1051 may be formed of silicon nitride (SiN x ) material, the inorganic layer 1052 may be made of silicon oxide (SiO x ) material, and the 2-3 inorganic layer 1053 can be made of silicon nitride (SiN x ) material formation.

[0098] The organic light emitting diode may include a first organic light emitting diode OLEDa, a second organic light emitting diode OLEDb, and a third organic light emitting diode OLEDc, but is not limited thereto. In an embodiment, the organic light emitting diode may be disposed on the second inorganic layer 105. The first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may include a first pixel electrode 140a, a second pixel electrode 140b, and a third pixel electrode 140c, respectively, and include a first intermediate layer 150a, a second intermediate layer 150b, and a third intermediate layer 150c, respectively, and include an opposing electrode 160. The organic light emitting diode may emit light. For example, the organic light emitting diode may emit red light, green light, or blue light.

[0099] In an embodiment, the first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be disposed on the second inorganic layer 105, respectively. The first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be connected to the conductive layer 130 through contact holes formed in the first inorganic layer 104 and the second inorganic layer 105, respectively. That is, the first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be electrically connected to the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc, respectively. The first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be made of, for example, ITO, In 2 O 3 Or IZO light-transmitting conductive oxide material.

[0100] In an embodiment, the pixel defining film 106 may be disposed on the second inorganic layer 105. The pixel defining film 106 may cover the edges of the first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c, respectively. The pixel defining film 106 may have an opening corresponding to the pixel PX, and at least the central portion of each of the first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be exposed through the opening, respectively. The pixel defining film 106 may include an organic material such as polyimide or hexamethyldisiloxane (HMDSO). In addition, a spacer (not shown) may be disposed on the pixel defining film 106.

[0101] In an embodiment, the first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c may be respectively disposed in the opening of the pixel defining film 106. The first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c may include a low molecular weight material or a high molecular weight material, respectively. When the first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c include low molecular weight materials, respectively, the first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c may include a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and / or an electron injection layer, respectively. When the first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c include high molecular weight materials, respectively, the first intermediate layer 150a, the second intermediate layer 150b, and the third intermediate layer 150c may generally have a structure including a hole transport layer and an emission layer, respectively.

[0102] In an embodiment, the counter electrode 160 may include a material such as ITO, In 2 O 3 The first pixel electrode 140a, the second pixel electrode 140b, and the third pixel electrode 140c may be used as anodes, respectively, and the counter electrode 160 may be used as a cathode. The polarity of the electrodes may be reversed.

[0103] In an embodiment, the counter electrode 160 may be disposed in the display area DA (see Figure 1 ) and may be arranged in the display area DA (see Figure 1 ) on the entire surface. That is, the counter electrode 160 may be integrally formed to cover the plurality of pixels PX. The counter electrode 160 may be disposed in the peripheral area PA (see Figure 1 ) in electrical contact with a common power line (not shown).

[0104] In an embodiment, a plurality of organic light emitting diodes may be provided, and the number of organic light emitting diodes may correspond to the number of reflectors.

[0105] In an embodiment, the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may be disposed on the second inorganic layer 105. The first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may be spaced apart from each other. The first organic light emitting diode OLEDa may be disposed on the 2-1 inorganic layer 1051, the second organic light emitting diode OLEDb may be disposed on the 2-2 inorganic layer 1052, and the third organic light emitting diode OLEDc may be disposed on the 2-3 inorganic layer 1053.

[0106] In an embodiment, the first organic light emitting diode OLEDa may include a first pixel electrode 140a, a first intermediate layer 150a, and an opposing electrode 160. The first pixel electrode 140a may be disposed on the 2-1 inorganic layer 1051. The first pixel electrode 140a may be connected to the conductive layer 130 through a contact hole formed in the first inorganic layer 104 and the 2-1 inorganic layer 1051. That is, the first pixel electrode 140a may be electrically connected to the first thin film transistor TFTa. The first intermediate layer 150a may be disposed on the first pixel electrode 140a.

[0107] In an embodiment, the second organic light emitting diode OLEDb may include a second pixel electrode 140b, a second intermediate layer 150b, and an opposing electrode 160. The second pixel electrode 140b may be disposed on the 2-2 inorganic layer 1052. The second pixel electrode 140b may be connected to the conductive layer 130 through a contact hole formed in the first inorganic layer 104 and the 2-2 inorganic layer 1052. That is, the second pixel electrode 140b may be electrically connected to the second thin film transistor TFTb. The second intermediate layer 150b may be disposed on the second pixel electrode 140b.

[0108] In an embodiment, the third organic light emitting diode OLEDc may include a third pixel electrode 140c, a third intermediate layer 150c, and an opposing electrode 160. The third pixel electrode 140c may be disposed on the 2-3 inorganic layer 1053. The third pixel electrode 140c may be connected to the conductive layer 130 through a contact hole formed in the first inorganic layer 104 and the 2-3 inorganic layer 1053. That is, the third pixel electrode 140c may be electrically connected to the third thin film transistor TFTc. The third intermediate layer 150c may be disposed on the third pixel electrode 140c.

[0109] In an embodiment, light emitted from the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may resonate by being reflected by the first reflector FLa, the second reflector FLb, and the third reflector FLc and the counter electrode 160, respectively. That is, the first reflector FLa, the second reflector FLb, and the third reflector FLc may respectively form an optical resonance structure with the counter electrode 160. The distances between the first reflector FLa, the second reflector FLb, and the third reflector FLc and the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc, respectively, may correspond to the wavelength regions of light emitted from the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc, respectively.

[0110] In an embodiment, in this structure, a distance d1 from the first reflector FLa to the first organic light emitting diode OLEDa, a distance d2 from the second reflector FLb to the second organic light emitting diode OLEDb, and a distance d3 from the third reflector FLc to the third organic light emitting diode OLEDc may be different from each other. Therefore, the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may emit light having different wavelengths.

[0111] In an embodiment, the distance d1 from the first reflector FLa to the first organic light emitting diode OLEDa, the distance d2 from the second reflector FLb to the second organic light emitting diode OLEDb, and the distance d3 from the third reflector FLc to the third organic light emitting diode OLEDc may increase in sequence. Therefore, the wavelength of light emitted from the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may decrease in sequence. For example, the first organic light emitting diode OLEDa may emit red light, the second organic light emitting diode OLEDb may emit green light, and the third organic light emitting diode OLEDc may emit blue light.

[0112] In an embodiment, the thin film encapsulation layer TFE may cover the entire display area DA (see Figure 1 ) and can extend to the peripheral area PA (see Figure 1 ) to cover the peripheral area PA (see Figure 1 ) at least a portion of.

[0113] In an embodiment, the thin film encapsulation layer TFE may extend to the outside of the common power line (not shown). The thin film encapsulation layer TFE may include a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 disposed between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include at least one inorganic material among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0114] In an embodiment, each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may have a single-layer or multi-layer structure including the above-mentioned materials. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include the same material or different materials. The thickness of the first inorganic encapsulation layer 310 and the thickness of the second inorganic encapsulation layer 330 may be different from each other. The thickness of the first inorganic encapsulation layer 310 may be greater than the thickness of the second inorganic encapsulation layer 330. In another embodiment, the thickness of the second inorganic encapsulation layer 330 may be greater than the thickness of the first inorganic encapsulation layer 310, or the thickness of the first inorganic encapsulation layer 310 and the thickness of the second inorganic encapsulation layer 330 may be the same.

[0115] In an implementation, the organic encapsulation layer 320 may include a monomer-based material or a polymer-based material. Examples of the polymer-based material may include acrylic resin, epoxy resin, polyimide, and polyethylene. In an implementation, the organic encapsulation layer 320 may include acrylate.

[0116] Figures 4 to 14 is a schematic cross-sectional view illustrating a part of a display device 1 according to an embodiment. Fig.15 is a schematic flow chart illustrating a method 2 of manufacturing a display device according to an embodiment.

[0117] exist Figures 4 to 15 In the same component Figure 3 The same reference numerals as those in the figure are denoted, and therefore, repeated description thereof will be omitted.

[0118] In the embodiments and with reference to Figures 4 to 15 , method 2 for manufacturing a display device may include: operation S1 of setting a first inorganic layer 104 on a substrate 100; operation S2 of setting a first reflector FLa, a second reflector FLb, and a third reflector FLc on the first inorganic layer 104; operation S3 of setting a second inorganic layer 105 on the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively; and operation S4 of setting a first organic light emitting diode OLEDa, a second organic light emitting diode OLEDb, and a third organic light emitting diode OLEDc, respectively, on the second inorganic layer 105.

[0119] In the embodiments and with reference to Figure 4 and Fig.15 , in operation S1 , a first inorganic layer 104 may be disposed on a substrate 100 .

[0120] In an implementation, the buffer layer 101 may be disposed on the substrate 100 , the gate insulating film 102 may be disposed on the buffer layer 101 , the interlayer insulating film 103 may be disposed on the gate insulating film 102 , and the first inorganic layer 104 may be disposed on the interlayer insulating film 103 .

[0121] In an embodiment, the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc may be respectively disposed on the buffer layer 101. A plurality of thin film transistors may be provided. For example, the plurality of thin film transistors may include a first thin film transistor TFTa, a second thin film transistor TFTb, and a third thin film transistor TFTc, but is not limited thereto. Each of the first thin film transistor TFTa, the second thin film transistor TFTb, and the third thin film transistor TFTc may include a semiconductor layer 110, a gate layer 120, and a conductive layer 130, respectively.

[0122] In the embodiments and with reference to Figures 4 to 6 as well as Fig.15 In operation S2, the first reflector FLa, the second reflector FLb, and the third reflector FLc may be respectively disposed on the substrate 100. The first reflector FLa, the second reflector FLb, and the third reflector FLc may be respectively arranged by using a damascene process.

[0123] In the embodiments and with reference to Figure 4 and Fig.15 , operation S2 of setting the first reflector FLa, the second reflector FLb and the third reflector FLc may include: operation S21 of forming the first groove portion GRa, the second groove portion GRb and the third groove portion GRc in the first inorganic layer 104, respectively; and operation S22 of setting an adhesive layer AD on the first inorganic layer 104 to cover the first inorganic layer 104.

[0124] In an embodiment, operation S21 of respectively forming the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc may include a photolithography process. The first groove portion GRa, the second groove portion GRb, and the third groove portion GRc may be respectively formed in the first inorganic layer 104 by performing dry etching or wet etching on the first inorganic layer 104. A plurality of groove portions may be provided. For example, the plurality of groove portions may include the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc.

[0125] In an embodiment, the adhesive layer AD may cover the first inorganic layer 104, and a portion of the adhesive layer AD may be accommodated in the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc. The adhesive layer AD may contact the inner peripheral surfaces of the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively. The adhesive layer AD may have an uneven cross-sectional shape to correspond to the shapes of the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc, respectively.

[0126] In the embodiments and with reference to Figure 5 and Fig.15 , the operation S2 of respectively providing the first reflector FLa, the second reflector FLb, and the third reflector FLc may include: an operation S23 of providing the reflective layer FL on the first inorganic layer 104 to cover the first inorganic layer 104. In this case, since the adhesive layer AD covers the first inorganic layer 104, the operation S23 of providing the reflective layer FL on the first inorganic layer 104 may be an operation S23 of providing the reflective layer FL on the adhesive layer AD. That is, the adhesive layer AD may be provided between the first inorganic layer 104 and the reflective layer FL. Parts of the reflective layer FL may be respectively accommodated in the first groove portion GRa, the second groove portion GRb, and the third groove portion GRc. For example, the reflective layer FL may include a silver (Ag) material.

[0127] In the embodiments and with reference to Figure 5 , Figure 6 and Fig.15 , the operation S2 of respectively setting the first reflector FLa, the second reflector FLb, and the third reflector FLc may include the operation S24 of polishing the reflective layer FL. The polishing process of the reflective layer FL may include chemical mechanical polishing (CMP). The upper portions of the reflective layer FL and the adhesive layer AD may be polished and removed. In this process, the polished reflective layer FL may be divided into the first reflector FLa, the second reflector FLb, and the third reflector FLc. In addition, the polished adhesive layer AD may be divided into the first adhesive member ADa, the second adhesive member ADb, and the third adhesive member ADc. That is, the operation S2 of setting the first reflector FLa, the second reflector FLb, and the third reflector FLc may be an operation of setting the first reflector FLa, the second reflector FLb, and the third reflector FLc spaced apart from each other on the first inorganic layer 104.

[0128] In an embodiment, when the reflective layer FL is formed of a silver (Ag) material, dry etching of the reflective layer FL may be difficult. In addition, when the reflective layer FL is wet-etched, it may be deflected due to isotropic etching of the reflective layer FL, making it difficult to refine the patterns of the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively. In an embodiment, since the reflective layer FL is polished by using a damascene process, the accuracy of patterning the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively, can be improved.

[0129] In the embodiments and with reference to Figures 7 to 13 as well as Fig.15 In operation S3 , the second inorganic layer 105 may be disposed on the first reflector FLa, the second reflector FLb, and the third reflector FLc.

[0130] First, refer to Figure 7 and Fig.15 , the operation S3 of respectively disposing the second inorganic layer 105 on the first reflector FLa, the second reflector FLb, and the third reflector FLc may include: an operation S31 of respectively disposing a 2-1 inorganic layer 1051 on the first reflector FLa, the second reflector FLb, and the third reflector FLc; an operation S32 of disposing a 2-2 inorganic layer 1052 on the 2-1 inorganic layer 1051; and an operation S33 of disposing a 2-3 inorganic layer 1053 on the 2-2 inorganic layer 1052. The 2-1 inorganic layer 1051 may be disposed on the first reflector FLa, the second reflector FLb, and the third reflector FLc. The 2-2 inorganic layer 1052 may cover the 2-1 inorganic layer 1051, and the 2-3 inorganic layer 1053 may cover the 2-2 inorganic layer 1052.

[0131] In the embodiments and with reference to Figures 8 to 10 as well as Fig.15 , the operation S3 of disposing the second inorganic layer 105 on the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively, may include: an operation S34 of etching portions of the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 that overlap with the first reflector FLa. The operation S34 of etching portions of the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 may include a photolithography process. The portions of the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 may be dry-etched or wet-etched.

[0132] In the embodiments and with reference to Figure 8 and Fig.15 , a first photoresist layer PRL1 may be disposed on the 2-3 inorganic layer 1053. The first photoresist layer PRL1 may include a first photolithography opening OPP1. The first photolithography opening OPP1 may overlap with the first reflector FLa.

[0133] In the embodiments and with reference to Fig. 9 and Fig.15 , the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 overlapping the first photolithography opening OPP1 may be etched. The 2-1 inorganic layer 1051 and the 2-2 inorganic layer 1052 may be formed of different materials. Therefore, a phenomenon in which the 2-1 inorganic layer 1051 is etched during a process of etching the 2-2 inorganic layer 1052 may be reduced.

[0134] In the embodiments and with reference to Fig. 9 , Fig.10 and Fig.15 , when portions of the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 are etched, the first photoresist layer PRL1 may be removed.

[0135] In the embodiments and with reference to Figures 11 to 13 as well as Fig.15 , the operation S3 of disposing the second inorganic layer 105 on the first reflector FLa, the second reflector FLb, and the third reflector FLc, respectively, may include an operation S35 of etching a portion of the 2-3 inorganic layer 1053 overlapping the second reflector FLb. The operation S35 of etching a portion of the 2-3 inorganic layer 1053 may include a photolithography process. The portion of the 2-3 inorganic layer 1053 may be dry-etched or wet-etched.

[0136] In the embodiments and with reference to Fig.11 and Fig.15 , the second photoresist layer PRL2 may be disposed on the second inorganic layer 105. In detail, the second photoresist layer PRL2 may be disposed on the 2-1 inorganic layer 1051 and the 2-3 inorganic layer 1053. The second photoresist layer PRL2 may include a second photolithography opening OPP2. The second photolithography opening OPP2 may be disposed in the second photoresist layer PRL2 to overlap with the second reflector FLb.

[0137] In the embodiments and with reference to Fig.12 and Fig.15 , the 2-3 inorganic layer 1053 overlapping with the second photolithography opening OPP2 may be etched. The 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 may be formed of different materials. Therefore, the phenomenon in which the 2-2 inorganic layer 1052 is etched during the process of etching the 2-3 inorganic layer 1053 may be reduced.

[0138] In the embodiments and with reference to Fig.12 , Fig.13 and Fig.15 , when portions of the 2-2 inorganic layer 1052 and the 2-3 inorganic layer 1053 are etched, the first photoresist layer PRL2 may be removed.

[0139] In the embodiments and with reference to Fig.14 and Fig.15 In operation S4, the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc may be respectively disposed on the second inorganic layer 105. The first organic light emitting diode OLEDa may be disposed on the 2-1 inorganic layer 1051 to overlap with the first reflector FLa, the second organic light emitting diode OLEDb may be disposed on the 2-2 inorganic layer 1052 to overlap with the second reflector FLb, and the third organic light emitting diode OLEDc may be disposed on the 2-3 inorganic layer 1053 to overlap with the third reflector FLc. The pixel defining film 106 and the thin film encapsulation layer TFE may be respectively disposed on the first organic light emitting diode OLEDa, the second organic light emitting diode OLEDb, and the third organic light emitting diode OLEDc.

[0140] According to an embodiment, the reflector may be processed more precisely by using a damascene process.

[0141] It should be understood that the embodiments described herein should be considered only in a descriptive sense, and not for limiting purposes. The description of the features or aspects within each embodiment should generally be considered to be other similar features or aspects that can be used in other embodiments. Although one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the present invention. Therefore, the scope of the various embodiments of the present invention should be interpreted as including all changes or modifications that can be obtained from the technical ideas of the various embodiments in addition to the embodiments disclosed herein. In addition, the embodiments or parts of the embodiments may be combined in whole or in part without departing from the scope of the present invention.

Claims

1. A method for manufacturing a display device, the method comprising: Disposing a first inorganic layer on a substrate; disposing a reflector on the first inorganic layer; disposing a second inorganic layer on the reflector; as well as An organic light emitting diode is arranged on the second inorganic layer, Wherein, setting the reflector comprises: forming a groove portion in the first inorganic layer; disposing a reflective layer on the first inorganic layer to cover the first inorganic layer; and The reflective layer is polished.

2. The method for manufacturing a display device according to claim 1, wherein: Providing the reflector further includes: providing an adhesive layer on the first inorganic layer to cover the first inorganic layer; and providing the reflective layer on the adhesive layer.

3. The method for manufacturing a display device according to claim 2, wherein: The adhesive layer contacts an inner peripheral surface of the groove portion.

4. The method for manufacturing a display device according to claim 1, wherein: The reflector includes a silver material.

5. The method for manufacturing a display device according to claim 1, wherein: The reflector comprises: first reflector; a second reflector spaced apart from the first reflector; and a third reflector spaced apart from the first reflector and the second reflector, Wherein, the organic light emitting diode comprises: a first organic light emitting diode overlapping the first reflector; a second organic light emitting diode overlapping the second reflector; and A third organic light emitting diode overlaps the third reflector.

6. The method for manufacturing a display device according to claim 5, wherein: Providing the second inorganic layer comprises: Disposing a 2-1 inorganic layer on the reflector; Disposing a 2-2 inorganic layer on the 2-1 inorganic layer; and Disposing a 2-3 inorganic layer on the 2-2 inorganic layer, Wherein, the first organic light emitting diode is disposed on the 2-1 inorganic layer, The second organic light emitting diode is disposed on the 2-2 inorganic layer, and The third organic light emitting diode is disposed on the 2-3 inorganic layer.

7. The method for manufacturing a display device according to claim 6, wherein: Providing the second inorganic layer further includes: Etching portions of the 2-2 inorganic layer and the 2-3 inorganic layer overlapping with the first reflector; and A portion of the 2-3 inorganic layer overlapping with the second reflector is etched.

8. The method for manufacturing a display device according to claim 7, wherein: Each of etching the portions of the 2-2 inorganic layer and the 2-3 inorganic layer and etching the portion of the 2-3 inorganic layer includes a photolithography process.

9. The method for manufacturing a display device according to claim 6, wherein: A distance from the first reflector to the first organic light emitting diode, a distance from the second reflector to the second organic light emitting diode, and a distance from the third reflector to the third organic light emitting diode increase in sequence.

10. The method for manufacturing a display device according to claim 6, wherein: The 2-1 inorganic layer and the 2-2 inorganic layer include different materials.

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