OLED display device and preparation method thereof

Abstract

The present invention provides an OLED display device and a preparation method thereof, belonging to the field of semiconductor technology. The present invention provides an OLED display device, comprising a substrate, an anode film layer, a pixel definition layer, an encapsulation layer, an OC flat layer and a color filter layer stacked in sequence, wherein the pixel definition layer is arranged at intervals on the surface of the anode film layer, the intervals of the pixel definition layer are filled with an OLED light-emitting device layer, the OC flat layer is embedded with a BM barrier layer, and the thickness of the encapsulation layer is 500 to 650 nm. The present invention reduces the thickness of the encapsulation layer, increases the angle at which pure color light is emitted, that is, reduces the angle at which the color deviation phenomenon occurs, and at the same time adds a BM barrier layer above the encapsulation layer to block the crosstalk generated when the light is emitted, thereby improving the color deviation phenomenon of the OLED screen.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an OLED display device and a preparation method thereof. Background Art

[0002] Existing silicon-based OLED (Micro-OLED) screens have a serious screen color deviation problem. Due to the design of the underlying anode structure, crosstalk will occur when the pixel passes through the upper color filter during operation. For example, the light emitted by the pixel enters from the R film layer but is emitted from the G film layer, and the emitted light produces crosstalk, that is, crosstalk occurs, resulting in color deviation in the final light output effect. Summary of the invention

[0003] In view of this, the object of the present invention is to provide an OLED display device and a method for manufacturing the same. The present invention limits the thickness of the encapsulation layer 113 to 500-650 nm, reduces the thickness of the encapsulation layer 113, increases the angle at which pure color light is emitted, that is, reduces the angle at which the color shift phenomenon occurs, and adds a BM barrier layer 114 above the encapsulation layer 113 to block the crosstalk generated when the light is emitted, thereby improving the color shift phenomenon of the OLED screen.

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0005] The present invention provides an OLED display device, comprising a substrate 117, an anode film layer 110, a pixel definition layer 111, an encapsulation layer 113, an OC flat layer 115 and a color filter layer 116 which are stacked in sequence, wherein the pixel definition layers 111 are arranged at intervals on the surface of the anode film layer 110, an OLED light-emitting device layer 112 is filled in the intervals between the pixel definition layers 111, a BM barrier layer 114 is embedded in the OC flat layer 115, and the thickness of the encapsulation layer 113 is 500-650nm.

[0006] Preferably, the BM barrier layer 114 has a thickness of 300-500 nm.

[0007] Preferably, the thickness of the OC planar layer 115 is 300-500 nm, and the thickness of the OC planar layer 115 is not less than the thickness of the BM barrier layer 114 .

[0008] Preferably, the thickness difference between the OC planar layer 115 and the BM barrier layer 114 is 0-50 nm.

[0009] Preferably, the encapsulation layer 113 has a thickness of 550-600 nm.

[0010] Preferably, the anode film layer 110 has a thickness of 50-200 nm.

[0011] Preferably, the pixel definition layer 111 has a thickness of 100-400 nm.

[0012] Preferably, the thickness of the OLED light emitting device 112 is 100-300 nm.

[0013] Preferably, the color filter layer 116 has a thickness of 500-1500 nm.

[0014] The present invention also provides a method for preparing the OLED display device described in the above technical solution, comprising the following steps:

[0015] Depositing an anode material on the surface of the substrate 117 to form an anode film layer 110;

[0016] A pixel definition layer 111 is formed in the intervals on the surface of the anode film layer 110, and then an OLED light emitting device layer 112 is formed in the intervals;

[0017] Depositing an encapsulation layer 113 on the surface of the pixel definition layer 111 and the OLED light emitting device layer 112;

[0018] A BM barrier layer 114 is formed on the surface of the encapsulation layer 113, and then deposition is performed to sequentially form an OC flat layer 115 and a color filter layer 116 to obtain the OLED display device.

[0019] The present invention provides an OLED display device, comprising a substrate 117, an anode film layer 110, a pixel definition layer 111, an encapsulation layer 113, an OC flat layer 115 and a color filter layer 116 which are stacked in sequence, wherein the pixel definition layers 111 are arranged at intervals on the surface of the anode film layer 110, an OLED light-emitting device layer 112 is filled in the intervals between the pixel definition layers 111, a BM barrier layer 114 is embedded in the OC flat layer 115, and the thickness of the encapsulation layer 113 is 500-650nm.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] The present invention limits the thickness of the encapsulation layer 113 to 500-650nm, reduces the thickness of the encapsulation layer 113, increases the angle at which the pure color light is emitted, that is, reduces the angle at which the color shift phenomenon occurs, and adds a BM barrier layer 114 above the encapsulation layer 113 to block the crosstalk generated when the light is emitted, thereby improving the color shift phenomenon of the Micro-OLED screen. The specific principles are as follows:

[0022] Figure 1is a schematic structural diagram of an OLED display device of the present invention, Figure 2 is a schematic diagram of the structure of a Micro-OLED display device in the related art, Figure 2 and Figure 1 In comparison, the encapsulation layer 113 has a thicker structure and there is no BM barrier layer 114, so that when light is emitted from the Micro-OLED display device, the color deviation angle visible to the human eye is reduced, the color deviation viewing angle is reduced as a whole, and the entire crosstalk viewing angle is also reduced due to the addition of the BM barrier layer 114, and the overall color deviation range is also improved. The present invention adds a BM barrier layer 114 to prevent the crosstalk effect generated when the light emitted from the OLED light-emitting device layer 112 passes through the R, G, and B color filters, resulting in a deterioration in the purity of the emitted light, and reduces the color deviation by reducing the angle at which the light enters the color filter layer 116.

[0023] The present invention also provides a method for preparing the Micro-OLED display device described in the above technical solution. The preparation method of the present invention is simple to operate and is suitable for industrial applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a structural schematic diagram of an OLED display device of the present invention;

[0025] Figure 2 It is a structural schematic diagram of an OLED display device in the related art;

[0026] Figures 3 to 8 A flow chart for preparing an OLED display device according to the present invention;

[0027] Fig. 9 A schematic diagram of the color shift viewing angle of the Micro-OLED display device prepared in Example 1 of the present invention;

[0028] In the figure, 110 is the anode film layer, 111 is the pixel definition layer, 112 is the OLED light-emitting device layer, 113 is the encapsulation layer, 114 is the BM barrier layer, 115 is the OC flat layer, 116 is the color filter layer, and 117 is the substrate. DETAILED DESCRIPTION

[0029] The present invention provides an OLED display device, comprising a substrate 117, an anode film layer 110, a pixel definition layer 111, an encapsulation layer 113, an OC flat layer 115 and a color filter layer 116 which are stacked in sequence, wherein the pixel definition layers 111 are arranged at intervals on the surface of the anode film layer 110, an OLED light-emitting device layer 112 is filled in the intervals between the pixel definition layers 111, a BM barrier layer 114 is embedded in the OC flat layer 115, and the thickness of the encapsulation layer 113 is 500-650nm.

[0030] The present invention has no special limitation on the materials of the anode film layer 110, the pixel definition layer 111, the OLED light-emitting device layer 112, the encapsulation layer 113, the BM barrier layer 114, the OC flat layer 115 and the color filter layer 116, and any material familiar to those skilled in the art may be used. For example, the anode film layer 110 may be made of Ti, Al or TiN, the pixel definition layer 111 may be made of SiNx, the OLED light-emitting device layer 112 may be made of common vapor deposition device materials, the encapsulation layer 113 may be made of Al2O3, TiO2 or SiNx, the BM barrier layer 114 may be made of PR glue, the OC flat layer 115 may be made of PR glue, and the color filter layer 116 may be made of photoresist.

[0031] Figure 1 1 is a schematic diagram of the structure of the OLED display device of the present invention, wherein 110 is an anode film layer, 111 is a pixel definition layer, 112 is an OLED light emitting device layer, 113 is an encapsulation layer, 114 is a BM barrier layer, 115 is an OC flat layer, 116 is a color filter layer, and 117 is a substrate. Figure 1 The structure of the Micro-OLED display device of the present invention is described.

[0032] The OLED display device of the present invention includes a substrate 117 .

[0033] In the present invention, when the material of the substrate 117 is preferably silicon, the substrate 117 is a silicon-based substrate, and the OLED display device is a Micro-OLED display device.

[0034] The OLED display device of the present invention comprises an anode film layer 110. In the present invention, the thickness of the anode film layer 110 is preferably 50-200 nm, specifically 50, 100, 150 or 200 nm.

[0035] The OLED display device of the present invention comprises a pixel definition layer 111 , wherein the pixel definition layer 111 is arranged at intervals on the surface of the anode film layer 110 , and the intervals between the pixel definition layers 111 are filled with an OLED light emitting device layer 112 .

[0036] In the present invention, the width of the intervals of the pixel definition layer 111 is preferably 2-4 μm, and specifically may be 2, 3 or 4 μm.

[0037] In the present invention, the thickness of the pixel definition layer 111 is preferably 100-400 nm, and specifically can be 100, 20, 300 or 400 nm.

[0038] In the present invention, the thickness of the OLED light emitting device 112 is preferably 100-300 nm, and specifically may be 100, 150, 200, 250 or 300 nm.

[0039] The OLED display device of the present invention includes an encapsulation layer 113, and the thickness of the encapsulation layer 113 is 500-650nm, and specifically can be 500, 550, 600 or 650nm. The present invention limits the thickness of the encapsulation layer 113 to 500-650nm, and reduces the thickness of the encapsulation layer 113, thereby increasing the angle at which pure color light is emitted, that is, reducing the angle at which the color shift phenomenon occurs. Reducing the thickness of other layers cannot improve the color shift.

[0040] The OLED display device of the present invention includes an OC planar layer 115 , in which a BM barrier layer 114 is embedded.

[0041] In the present invention, the thickness of the BM barrier layer 114 is preferably 300-500nm, specifically 300, 350, 400, 450 or 500nm, and is a black matrix. The present invention defines the BM barrier layer 114 as being embedded in the OC flat layer 115, and is located below the CF layer, unlike the conventional position above the CF layer. The present invention adds a BM barrier layer 114 above the encapsulation layer 113 to block the crosstalk generated when light is emitted, thereby improving the color shift phenomenon of the Micro-OLED screen.

[0042] In the present invention, the positions of the BM barrier layer 114 and the pixel definition layer 111 are preferably corresponding, and the width of the interval of the BM barrier layer 114 is preferably 2-4 μm, specifically 2, 3 or 4 μm.

[0043] In the present invention, the thickness of the OC planar layer 115 is preferably 300-500 nm, specifically 300, 350, 400, 450 or 500 nm, and the thickness of the OC planar layer 115 is preferably not less than the thickness of the BM barrier layer 114 .

[0044] In the present invention, the thickness difference between the OC planar layer 115 and the BM barrier layer 114 is preferably 0-50 nm, and specifically can be 0, 10, 20, 30, 40 or 50 nm.

[0045] The Micro-OLED display device of the present invention includes a color filter layer 116, and the thickness of the color filter layer 116 is preferably 500-1500 nm, and specifically can be 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400 or 1500 nm.

[0046] The present invention also provides a method for preparing the OLED display device described in the above technical solution, comprising the following steps:

[0047] Depositing an anode material on the surface of the substrate 117 to form an anode film layer 110;

[0048] A pixel definition layer 111 is formed in the intervals on the surface of the anode film layer 110, and then an OLED light emitting device layer 112 is formed in the intervals;

[0049] Depositing an encapsulation layer 113 on the surface of the pixel definition layer 111 and the OLED light emitting device layer 112;

[0050] A BM barrier layer 114 is formed on the surface of the encapsulation layer 113, and then deposition is performed to sequentially form an OC flat layer 115 and a color filter layer 116 to obtain the Micro-OLED display device.

[0051] Figures 3 to 8 The flowchart of preparing the Micro-OLED display device of the present invention is as follows: Figures 3 to 8 The production method of the present invention is described.

[0052] The present invention deposits an anode material on the surface of the substrate 117 to form an anode film layer 110, and then forms a pixel definition layer 111 on the surface of the anode film layer 110. Figure 3 Then, an OLED light emitting device layer 112 is formed in the gap, preferably by evaporation. Figure 4 , and then deposit the encapsulation layer 113, see Figure 5 Then, a BM barrier layer 114 is formed on the surface of the encapsulation layer 113. Figure 6 Then, deposition is performed to form an OC flat layer 115 (see Figure 7 ) and color filter layer 116 (see Figure 8 ), to obtain the OLED display device.

[0053] In the present invention, the formation of the BM barrier layer 114 preferably includes the following steps: first, using a coating device to coat the entire surface of the BM barrier layer 114 material (such as PR glue), then using a photolithography machine to expose it, and then developing it to develop away the unnecessary PR glue, and the retained pattern is the BM barrier layer 114.

[0054] The present invention has no particular limitation on the specific method of depositing and forming each layer, and any method familiar to those skilled in the art may be used.

[0055] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0056] Example 1

[0057] Preparation with Figure 1 The OLED display device of the structure shown (a Micro-OLED display device in the present embodiment) comprises a substrate 117 (silicon-based), an anode film layer 110 (Ti, 50 nm thick), a pixel definition layer 111 (SiNx, 100 nm thick), an encapsulation layer 113 (made of Al2O3, 500 nm thick), an OC flat layer 115 (made of transparent PR glue, 300 nm thick) and a color filter layer 116 (500 nm thick) which are stacked in sequence. The pixel definition layers 111 are arranged at intervals on the surface of the anode film layer 110, and the intervals between the pixel definition layers 111 are filled with an OLED light-emitting device layer 112 (100 nm thick). The OC flat layer 115 has an embedded BM barrier layer 114 (made of black PR glue, 300 nm thick), and the width of the intervals between the pixel definition layers 111 is 2 μm.

[0058] The specific preparation process is as follows:

[0059] Deposition is performed on the surface of the substrate 117 to form an anode film layer 110, and then a pixel definition layer 111 is formed in the interval on the surface of the anode film layer 110, and then an OLED light-emitting device layer 112 is formed by vapor deposition in the interval, and then a packaging layer 113 is deposited, and then a BM barrier layer 114 is formed on the surface of the packaging layer 113, and then deposition is performed again to sequentially form an OC flat layer 115 and a color filter layer 116 to obtain a Micro-OLED display device, wherein the formation of the BM barrier layer 114 is specifically the following steps: first, a coating device is used to coat the entire surface of the BM barrier layer 114 material, and then a photolithography machine is used to expose it, and then development is performed to develop away unnecessary PR glue, and the retained pattern is the BM barrier layer 114.

[0060] Comparative Example

[0061] preparation Figure 2The Micro-OLED display device of the structure shown includes a substrate 117 (silicon-based), an anode film layer 110 (Ti, 50nm thick), a pixel definition layer 111 (SiNx, 100nm thick), an encapsulation layer 113 (made of Al2O3, 500nm thick), an OC flat layer 115 (made of transparent PR glue, 300nm thick) and a color filter layer 116 (500nm thick) which are stacked in sequence. The pixel definition layers 111 are arranged at intervals on the surface of the anode film layer 110, and the intervals between the pixel definition layers 111 are filled with an OLED light-emitting device layer 112 (100nm thick).

[0062] The specific preparation process is as follows:

[0063] Deposition is performed on the surface of the substrate 117 to form an anode film layer 110, and then a pixel definition layer 111 is formed on the surface of the anode film layer 110, and then an OLED light-emitting device layer 112 is formed by evaporation, and then an encapsulation layer 113 is deposited, and then deposition is performed on the surface of the encapsulation layer 113 to sequentially form an OC flat layer 115 and a color filter layer 116 to obtain a Micro-OLED display device.

[0064] Fig. 9 Schematic diagram of the color deviation angle of the Micro-OLED display device manufactured in Example 1 of the present invention. The Micro-OLED display device of the embodiment of the present invention makes the color deviation angle visible to the human eye when light is emitted. Figure 2 The 40° in the equation is reduced to Fig. 9 The color deviation viewing angle has been improved by 10%; the viewing angle of the entire crosstalk has been improved by 36° Figure 2 The 9° in the Fig. 9 The 8° in the image stabilization angle is reduced by 11% overall, and the viewing angle and range of color shift are reduced overall, improving product performance.

[0065] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. An OLED display device, characterized in that: The invention comprises a substrate (117), an anode film layer (110), a pixel definition layer (111), an encapsulation layer (113), an OC flat layer (115) and a color filter layer (116) which are stacked in sequence, wherein the pixel definition layer (111) is arranged at intervals on the surface of the anode film layer (110), an OLED light-emitting device layer (112) is filled in the intervals between the pixel definition (111) layers, a BM barrier layer (114) is embedded in the OC flat layer (115), and the thickness of the encapsulation layer (113) is 500-650 nm.

2. The OLED display device according to claim 1, characterized in that: The thickness of the BM barrier layer (114) is 300-500 nm.

3. The OLED display device according to claim 2, characterized in that: The thickness of the OC flat layer (115) is 300-500 nm, and the thickness of the OC flat layer (115) is not less than the thickness of the BM barrier layer (114).

4. The OLED display device according to claim 3, characterized in that: The thickness difference between the OC flat layer (115) and the BM barrier layer (114) is 0-50 nm.

5. The OLED display device according to claim 1, characterized in that: The thickness of the encapsulation layer (113) is 550-600 nm.

6. The OLED display device according to claim 1, characterized in that: The thickness of the anode film layer (110) is 50-200 nm.

7. The OLED display device according to claim 1, characterized in that: The thickness of the pixel definition layer (111) is 100-400 nm.

8. The OLED display device according to claim 1, characterized in that: The thickness of the OLED light-emitting device (112) is 100-300 nm.

9. The OLED display device according to claim 1, characterized in that: The color filter layer (116) has a thickness of 500-1500 nm.

10. The method for preparing an OLED display device according to any one of claims 1 to 9, characterized in that: The following steps are involved: Depositing an anode material on the surface of a substrate (117) to form an anode film layer (110); Forming a pixel definition layer (111) in the surface interval of the anode film layer (110), and then forming an OLED light-emitting device layer (112) in the interval; Depositing an encapsulation layer (113) on the surface of the pixel definition layer (111) and the OLED light-emitting device layer (112); A BM barrier layer (114) is formed on the surface of the encapsulation layer (113), and then deposition is performed to sequentially form an OC flat layer (115) and a color filter layer (116), thereby obtaining the OLED display device.

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