Room temperature terahertz Hall rectifier and preparation method and application thereof

Abstract

The invention belongs to the technical field of terahertz photoelectric detection, and provides a room-temperature terahertz Hall rectifier and a preparation method thereof. The room-temperature terahertz Hall rectifier comprises a substrate layer, an absorption layer and an oxidation-medium-imitating protection layer, wherein the substrate layer and the absorption layer are stacked; the absorption layer comprises a tantalum-nickel-tellurium layer and an end metal electrode layer which are arranged dispersedly; the number of the end metal electrode layers is four. The four end metal electrode layers are symmetrically distributed in the transverse direction and the longitudinal direction; and the tantalum-nickel-tellurium layer is positioned in the center of an area formed by the four end metal electrodes. According to the invention, a current rectifier which does not need to use a semiconductor junction and a bias voltage and is not limited by a thermal voltage threshold and transformation time is constructed by using a nonlinear Hall effect which is associated with a ferroelectric polarization surface state of tantalum-nickel-tellurium and can continuously exist above room temperature; the rectifier has the advantages of zero threshold voltage, quick response and broadband frequency detection, and can realize efficient collection of weak electromagnetic wave signals.

Description

Technical Field

[0001] The present invention relates to the field of terahertz photoelectric detection technology, and in particular to a room temperature terahertz Hall rectifier and a preparation method and application thereof. Background Art

[0002] At present, Schottky diodes, which are widely used in rectifiers, are limited by radio frequency and electron transition time, which makes rectifiers face difficulties in migrating to high frequency bands (especially terahertz). Therefore, it is necessary to explore new alternative mechanisms for high-frequency collection of electromagnetic energy.

[0003] The nonlinear Hall effect provides a new alternative mechanism for wireless rectifiers with broadband response, which can overcome the limitations of thermal voltage threshold and electron conversion time and has the potential to exceed the quantum efficiency limit. However, most of the current reports on the nonlinear Hall effect are still in low-temperature environments, and only a few have achieved the nonlinear Hall effect at room temperature. Moreover, the application of the nonlinear Hall effect to frequency is basically still under low-frequency conditions; the frequency used by the rectifier is generally limited to a few GHz. Therefore, there is an urgent need to develop room-temperature broadband nonlinear Hall effect-based technologies that can extend the rectifier frequency to the terahertz range. Summary of the invention

[0004] In view of this, the object of the present invention is to provide a room temperature terahertz Hall rectifier and a preparation method and application thereof. The operating frequency of the Hall rectifier provided by the present invention can reach terahertz.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0006] The present invention provides a room temperature terahertz Hall rectifier, comprising a substrate layer, an absorption layer and an oxidation-simulating medium protection layer, wherein the substrate layer and the absorption layer are stacked;

[0007] The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers;

[0008] The silicon dioxide layer is in contact with the absorption layer;

[0009] The absorption layer includes dispersed tantalum nickel telluride (TaNiTe5) layers and terminal metal electrode layers; the number of the terminal metal electrode layers is 4; the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum nickel telluride layers; the tantalum nickel telluride layer is located at the center of the area formed by the 4 terminal metal electrode layers;

[0010] The tantalum-nickel-telluride layer and the terminal metal electrode layer are connected via a metal connecting rod;

[0011] The pseudo-oxidation medium protection layer wraps the tantalum nickel telluride layer and the terminal metal electrode layer.

[0012] Preferably, the resistivity of the intrinsic high-resistance silicon layer is greater than or equal to 20,000 Ω·cm, and the thickness is 400-500 μm.

[0013] Preferably, the thickness of the silicon dioxide layer is 400-500 nm.

[0014] Preferably, the terminal metal electrode layer comprises a chromium layer and a gold layer which are stacked, and the chromium layer is in contact with the silicon dioxide layer;

[0015] The thickness of the chromium layer is 10-20 nm, and the thickness of the gold layer is 20-30 nm.

[0016] Preferably, the thickness of the tantalum-nickel-telluride layer is 30-80 nm.

[0017] Preferably, the metal connecting rod comprises a stacked chromium layer and a gold layer, the chromium layer overlaps the tantalum nickel tellurium layer and the terminal metal electrode layer; the thickness of the chromium layer is 15-20 nm, and the thickness of the gold layer is 65-75 nm.

[0018] Preferably, the material of the imitation oxidation medium protection layer is boron nitride, and the thickness of the imitation oxidation medium protection layer is 10-30 nm.

[0019] Preferably, the room-temperature terahertz Hall rectifier further includes a PCB base, and the base layer in the room-temperature terahertz Hall rectifier is in contact with the PCB base.

[0020] The present invention also provides a method for preparing the room temperature terahertz Hall rectifier described in the above technical solution, comprising the following steps:

[0021] (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers;

[0022] (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer;

[0023] (3) using electron beam lithography to photolithography the metal connecting rod structure, and then using electron beam evaporation to prepare the metal connecting rod;

[0024] (4) The tantalum-nickel-telluride layer and the terminal metal electrode layer are wrapped with an oxidative medium protective layer to obtain the room temperature terahertz Hall rectifier.

[0025] The present invention also provides the use of the room temperature terahertz Hall rectifier described in the above technical solution or the room temperature terahertz Hall rectifier prepared by the preparation method described in the above technical solution in AC electromagnetic wave signal conversion.

[0026] The invention provides a room temperature terahertz Hall rectifier.

[0027] Tantalum nickel telluride (TaNiTe5) is a topological nodal line semi-metallic material with ferroelectricity. Under normal circumstances, metallic materials cannot coexist with ferroelectricity due to the strong shielding effect on local electric dipoles. In TaNiTe5, due to the reduced shielding along the out-of-plane direction, limited out-of-plane ferroelectric polarization is caused, while the in-plane semi-metallic properties are maintained. The bulk state of TaNiTe5 has a central symmetrical structure, but the surface atoms have symmetry breaking due to distortion. This symmetry breaking causes a mirror symmetry axis to disappear and induces the appearance of a Berry curvature dipole, resulting in a Berry curvature dipole associated with the ferroelectric polarization surface state. The spontaneous distortion of the surface atoms of tantalum nickel telluride causes symmetry breaking, resulting in the generation of a nonlinear Hall effect associated with ferroelectric polarization. The present invention utilizes this nonlinear Hall effect associated with ferroelectric polarization to achieve a rectification function. The rectifier of the present invention does not require the use of semiconductor junctions and bias voltages, has the characteristics of zero threshold voltage, fast response, broadband frequency detection, and an operating frequency of terahertz, and can achieve efficient collection of weak electromagnetic wave signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of the cross-sectional structure of a room temperature terahertz Hall rectifier provided by the present invention;

[0029] Figure 2 A schematic diagram of the top view of the room temperature terahertz Hall rectifier provided by the present invention;

[0030] Figure 3 Schematic diagram of ferroelectric distortion of tantalum nickel telluride and generation of Berry curvature dipole;

[0031] Figure 4 The test results of the tantalum nickel telluride layer in the room temperature terahertz Hall rectifier provided in Example 1 using a piezoresponse force microscope (PFM) to detect the ferroelectric domain at the nanoscale;

[0032] Figure 5 The second harmonic voltage test result of the room temperature terahertz Hall rectifier provided in Example 1 is as follows:

[0033] Figure 6 The result of the temperature dependence of the nonlinear magnetic susceptibility of the room temperature terahertz Hall rectifier provided in Example 1;

[0034] Figure 7 The analysis result of the scaling law of the room temperature terahertz Hall rectifier provided in Example 1;

[0035] Figure 8A diagram of a test system device for testing the photoelectric response performance of the room temperature terahertz Hall rectifier provided in Example 1;

[0036] Fig. 9 A terahertz light response time diagram of the room temperature terahertz Hall rectifier provided in Example 1;

[0037] Fig.10 A graph showing the variation of the optical response of the room temperature terahertz Hall rectifier provided in Example 1 with respect to frequency in different terahertz frequency bands;

[0038] Fig.11 The room temperature terahertz Hall rectifier provided in Example 1 has a signal receiving capability when the RF source outputs at different set powers;

[0039] Figure numerals: 1-intrinsic high-resistance silicon layer, 2-silicon dioxide layer, 3-terminal metal electrode layer, 4-tantalum nickel telluride layer; 5-metal connecting rod, 6-imitation oxide medium protection layer. DETAILED DESCRIPTION

[0040] Glossary:

[0041] In the present invention, the tantalum nickel telluride is peeled off from the single crystal tantalum nickel telluride to form a tantalum nickel telluride sheet. The cross-sectional shape of the tantalum nickel telluride sheet is a rectangle. The cross-sectional shape of the tantalum nickel telluride layer is a rectangle. The transverse direction specifically refers to the short side of the tantalum nickel telluride layer, that is, the crystallographic c-axis direction of the tantalum nickel telluride. The longitudinal direction specifically refers to the long side of the tantalum nickel telluride layer, that is, the crystallographic a-axis direction of the tantalum nickel telluride.

[0042] Figure 1 A schematic diagram of the cross-sectional structure of a room temperature terahertz Hall rectifier provided by the present invention, Figure 2 The schematic diagram of the top view of the room temperature terahertz Hall rectifier provided by the present invention is shown below in combination with Figure 1 and Figure 2 The structure of the room temperature terahertz Hall rectifier provided by the present invention is described in detail.

[0043] The present invention provides a room temperature terahertz Hall rectifier, comprising a substrate layer, an absorption layer and an oxidation-simulating medium protection layer, wherein the substrate layer and the absorption layer are stacked;

[0044] The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers;

[0045] The silicon dioxide layer is in contact with the absorption layer;

[0046] The absorption layer includes dispersed tantalum-nickel-telluride layers and terminal metal electrode layers; the number of the terminal metal electrode layers is 4; the 4 terminal metal electrode layers are symmetrically distributed in the horizontal and vertical directions; the tantalum-nickel-telluride layer is located at the center of the area formed by the 4 terminal metal electrode layers;

[0047] The tantalum-nickel-telluride layer and the terminal metal electrode layer are connected via a metal connecting rod;

[0048] The pseudo-oxidation medium protection layer wraps the tantalum nickel telluride layer and the terminal metal electrode layer.

[0049] The room temperature terahertz Hall rectifier provided by the present invention includes a base layer, and the base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked. In the present invention, the resistivity of the intrinsic high-resistance silicon layer is preferably greater than or equal to 20000Ω·cm, more preferably 20000-50000Ω·cm, and specifically preferably 20000Ω·cm, 25000Ω·cm, 30000Ω·cm, 35000Ω·cm, 40000Ω·cm, 45000Ω·cm or 50000Ω·cm; the thickness is preferably 400-500μm, and specifically preferably 400μm, 410μm, 420μm, 430μm, 440μm, 450μm, 460μm, 470μm, 480μm, 490μm or 500μm. In the present invention, the thickness of the silicon dioxide layer is preferably 400 to 500 nm, and is particularly preferably 400 nm, 410 nm, 420 nm, 430 nm, 440 nm, 450 nm, 460 nm, 470 nm, 480 nm, 490 nm or 500 nm. In the present invention, the cross-sectional shape of the substrate layer is preferably circular. In the specific implementation of the present invention, the substrate layer is particularly preferably a commercially available high-resistance silicon dioxide wafer, more preferably a high-resistance silicon dioxide wafer purchased from Shanghai Anwei Technology Co., Ltd.

[0050] The room temperature terahertz Hall rectifier provided by the present invention includes an absorption layer stacked on the substrate layer, and the silicon dioxide layer in the substrate layer is preferably in contact with the absorption layer. In the present invention, the absorption layer includes a dispersed tantalum nickel telluride layer and an end metal electrode layer; the number of the end metal electrode layers is 4; the 4 end metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum nickel telluride layers; the tantalum nickel telluride layers are located at the center of the area formed by the 4 end metal electrode layers; the tantalum nickel telluride layers and the end metal electrode layers are connected by a metal connecting rod. In the present invention, the 4 end metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum nickel telluride layers, and can form a rectifier structure that can collect currents in the transverse and longitudinal directions respectively.

[0051] In the present invention, the terminal metal electrode layer preferably includes a chromium layer and a gold layer stacked, and the chromium layer is in contact with the silicon dioxide layer. In the present invention, the thickness of the chromium layer is preferably 10 to 20 nm, and is preferably 10 nm, 15 nm or 20 nm. In the present invention, the thickness of the gold layer is preferably 20 to 30 nm, and is preferably 20 nm, 25 nm or 30 nm. In the present invention, the cross-sectional shape of the terminal metal electrode layer is preferably a "convex" type, and the "convex" type includes a head and a handle. The cross-sectional shape of the head is preferably a rectangle, and the size of the rectangle is preferably 100 to 200 μm × 100 to 200 μm, and is more preferably 100 μm × 100 μm; the cross-sectional shape of the handle is preferably a strip, and the size of the strip is preferably 200 to 400 μm × 10 to 20 μm, and is more preferably 150 μm × 15 μm. In the present invention, the handle of the terminal metal electrode layer is preferably facing the tantalum nickel telluride layer.

[0052] In the present invention, the thickness of the tantalum nickel telluride layer is preferably 30 to 80 nm, and more preferably 30 nm, 40 nm, 50 nm, 60 nm, 70 nm or 80 nm. In the present invention, the cross-sectional shape of the tantalum nickel telluride layer is preferably a rectangle, and the size of the rectangle is preferably ≥ 4 μm × 8 μm, and more preferably 4 μm × 8 μm.

[0053] In the present invention, the metal connecting rod preferably includes a stacked chromium layer and a gold layer, and the chromium layer is preferably overlapped with the tantalum nickel telluride layer and the terminal metal electrode layer. In the present invention, the thickness of the chromium layer is preferably 15 to 20 nm, specifically preferably 15 nm or 20 nm; the thickness of the gold layer is preferably 65 to 75 nm, specifically preferably 65 nm, 70 nm or 75 nm. In the present invention, the cross-sectional dimensions of the metal connecting rod are preferably 2 to 5 μm × 15 to 25 μm. In the present invention, the cross-sectional dimensions of the metal connecting rod overlapping the tantalum nickel telluride layer and the terminal metal electrolytic layer are independently preferably 2 to 5 μm × 2 to 5 μm, and further preferably 4 μm × 4 μm.

[0054] The room temperature terahertz Hall rectifier provided by the present invention includes an imitation oxidation medium protection layer; the imitation oxidation medium protection layer wraps the tantalum nickel telluride layer and the terminal metal electrode layer. In the present invention, the material of the imitation oxidation medium protection layer is preferably boron nitride, and the thickness of the imitation oxidation medium protection layer is preferably 10 to 30 nm, specifically preferably 10 nm, 15 nm, 20 nm, 25 nm or 30 nm. In the present invention, the imitation oxidation medium protection layer can protect the tantalum nickel telluride layer and the terminal metal electrode layer from being oxidized.

[0055] In the present invention, the room temperature terahertz Hall rectifier preferably further includes a PCB base, and the base layer in the room temperature terahertz Hall rectifier preferably contacts the PCB base.

[0056] The present invention also provides a method for preparing the room temperature terahertz Hall rectifier described in the above technical solution, comprising the following steps:

[0057] (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers;

[0058] (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer;

[0059] (3) using electron beam lithography to photolithography the metal connecting rod structure, and then using electron beam evaporation to prepare the metal connecting rod;

[0060] (4) The tantalum-nickel-telluride layer and the terminal metal electrode layer are wrapped with an oxidative medium protective layer to obtain the room temperature terahertz Hall rectifier.

[0061] The present invention uses ultraviolet photolithography to photolithograph the base layer to obtain four terminal metal electrode layer structures, and then uses electron beam evaporation to prepare the four terminal metal electrode layers.

[0062] The present invention does not specifically limit the parameters of the photolithography, and operations familiar to those skilled in the art can be used. The present invention does not specifically limit the parameters of the electron beam evaporation method.

[0063] After preparing four terminal metal electrode layers, the present invention mechanically peels off the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transfers the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer.

[0064] In the present invention, the tool for mechanical stripping is preferably a blue tape. In the present invention, the thickness of the tantalum nickel tellurium thin sheet is preferably 30 to 80 nm. In the present invention, the cross-sectional shape of the tantalum nickel tellurium thin sheet is preferably a rectangle. In the present invention, the tantalum nickel tellurium thin sheet is preferably transparent; the tantalum nickel tellurium thin sheet is preferably screened by a microscope.

[0065] After forming the tantalum-nickel-tellurium layer, the present invention uses electron beam lithography to photolithography the metal connecting rod structure, and then uses electron beam evaporation to prepare the metal connecting rod.

[0066] The present invention does not specifically limit the parameters of the electron beam lithography method and the electron beam evaporation method, and operations familiar to those skilled in the art may be adopted.

[0067] After the metal connecting rod is prepared, the present invention uses an oxidative medium protective layer to wrap the tantalum nickel tellurium layer and the terminal metal electrode layer to obtain the room temperature terahertz Hall rectifier.

[0068] In the present invention, when the material of the simulated oxidizing medium protective layer is preferably boron nitride, the use of the simulated oxidizing medium protective layer to wrap the tantalum nickel telluride layer and the terminal metal electrode layer preferably includes the following steps: mechanically exfoliating the single crystal boron nitride to obtain a thin layer of boron nitride, transferring the thin layer of boron nitride to the tantalum nickel telluride layer and the terminal metal electrode layer to form a simulated oxidizing medium protective layer. In the present invention, the tool for mechanical exfoliation is preferably a blue tape. In the present invention, the thickness of the thin layer of boron nitride is preferably 10 to 30 nm. In the present invention, the thin layer of boron nitride is preferably transparent; the thin layer of boron nitride is preferably screened by a microscope.

[0069] The present invention also provides the use of the room temperature terahertz Hall rectifier described in the above technical solution or the room temperature terahertz Hall rectifier prepared by the preparation method described in the above technical solution in AC electromagnetic wave signal conversion.

[0070] The room temperature terahertz Hall rectifier provided by the present invention and its preparation method and application are described in detail below in conjunction with the embodiments, but they should not be understood as limiting the protection scope of the present invention.

[0071] Example 1

[0072] according to Figure 1 and Figure 2 A room temperature terahertz Hall rectifier is provided, wherein the cross-sectional shape of the base layer is a four-inch (wafer) circle, the resistivity of the intrinsic high-resistance silicon layer stacked in the base layer is 20000Ω·cm, the thickness is 450μm, and the thickness of the silicon dioxide layer is 450nm; in the end metal electrode layer, the thickness of the chromium layer is 10nm, the thickness of the gold layer is 20nm, the cross-sectional shape of the end metal electrode layer is a "convex" type, the size of the "convex" head is 100μm×100μm, the size of the handle is 150μm×15μm, and the four end metal electrode layers are tantalum nickel telluride layers. It is symmetrically distributed in the transverse and longitudinal directions, forming a rectifying structure that can collect current in the transverse and longitudinal directions respectively; the thickness of the tantalum nickel telluride layer is 50nm, and the size of the cross-sectional shape is 4μm×8μm; in the metal connecting rod, the chromium layer is 15nm thick, the gold layer is 65nm thick, and the cross-sectional size is 4μm×20μm; the material of the simulated oxide medium protective layer is boron nitride with a thickness of 20nm; the cross-sectional size of the overlapping part of the metal connecting rod and the end metal electrode layer is 4μm×4μm, and the cross-sectional size of the overlapping part of the metal connecting rod and the tantalum nickel telluride layer is 4μm×4μm.

[0073] The specific preparation method is as follows: the substrate layer is photolithographically processed by ultraviolet photolithography to obtain four terminal metal electrode layer structures, and then the four terminal metal electrode layers are prepared by electron beam evaporation; the single crystal tantalum nickel telluride is mechanically stripped to obtain tantalum nickel telluride thin sheets, and the tantalum nickel telluride thin sheets are transferred to the surface of the substrate layer to form a tantalum nickel telluride layer; the metal connecting rod structure is photolithographically processed by electron beam lithography, and then the metal connecting rod is prepared by electron beam evaporation; the single crystal boron nitride is mechanically stripped to obtain a thin layer of boron nitride, and the thin layer of boron nitride is transferred to the tantalum nickel telluride layer and the terminal metal electrode layer to form an oxidation-simulated medium protective layer.

[0074] Figure 3 Schematic diagram of ferroelectric distortion of tantalum nickel telluride and generation of Berry curvature dipole, where the upper figure is the distribution of Ni atoms in the bulk state of tantalum nickel telluride, and the lower figure is the distribution of Ni atoms on the surface of tantalum nickel telluride. Figure 3 As shown in the figure, due to the structural distortion of the surface atoms, the distribution of the surface atoms is different from that in the bulk; the undistorted surface (bulk) Ni atoms show two mirror symmetry axes X and Y. Due to the distortion of the Ni atoms in the direction of the crystal c-axis, the mirror symmetry axis X is destroyed, which leads to the generation of ferroelectric polarization and Berry curvature dipole on the surface (ferroelectric distortion generates a Berry curvature dipole perpendicular to the distortion direction).

[0075] Figure 4 The test results of the tantalum nickel telluride layer in the room temperature terahertz Hall rectifier provided in Example 1 using a piezoresponse force microscope (PFM) to detect the ferroelectric domain at the nanoscale; Figure 4 In the figure, the left picture is the phase hysteresis loop diagram, and the right picture is the amplitude "butterfly" loop diagram. Figure 4 It is shown that the surface of the tantalum nickel telluride layer has switchable ferroelectric polarization. Figure 4 The phase hysteresis loop in the figure shows a phase hysteresis loop and an amplitude "butterfly" loop with crystal axis dependence, where the crystallographic c-axis of tantalum nickel telluride has a more obvious ferroelectric polarization than the a-axis.

[0076] A second harmonic voltage test was performed on the room temperature terahertz Hall rectifier provided in Example 1. During the test, a low-frequency alternating current was applied along the tantalum nickel telluride crystallographic a-axis (c-axis), and a phase-locked amplifier was used to measure the second harmonic voltage of its crystallographic c-axis (a-axis), where the second harmonic voltage of the c-axis corresponds to the nonlinear Hall (NLH) voltage.

[0077] The results are as follows Figure 5 As shown, Figure 5 The second harmonic voltage test result of the room temperature terahertz Hall rectifier provided in Example 1 is as follows: Figure 5 middle, It represents the second harmonic voltage measured along the a-axis direction of the tantalum nickel telluride crystal when the current with frequency ω is fed along the c-axis direction of the tantalum nickel telluride crystal; It represents the second harmonic voltage measured along the c-axis direction of the tantalum nickel telluride crystal when the current with frequency ω is fed along the a-axis direction of the tantalum nickel telluride crystal. Figure 5 It can be seen that the second harmonic voltage signal of the tantalum nickel telluride crystal c-axis, and the second harmonic voltage depends on the square of the excitation current.

[0078] Considering that the second harmonic voltage signal in TaNiTe5 is relatively weak at temperatures above 100K and is easily affected by the deviation caused by the disordered state, the test of the temperature dependence of the nonlinear magnetic susceptibility of the room temperature terahertz Hall rectifier provided in Example 1 is mainly limited to the temperature range of 40 to 100K. The results are shown in Figure 6 and Figure 7 As shown, Figure 6 The result of the temperature dependence of the nonlinear magnetic susceptibility of the room temperature terahertz Hall rectifier provided in Example 1, Figure 7 The analysis results of the scaling law of the room temperature terahertz Hall rectifier provided in Example 1. Figure 7 It is shown that the nonlinear magnetic susceptibility is linearly related to the square of the conductivity in this temperature range. Since the conductivity is linearly related to the scattering time τ, there are two contributions to the second-order conductivity: τ 3 and τ. Among them, τ 3 represents the contribution from oblique scattering, while τ represents the contribution from the Berry curvature dipole and side hopping. Therefore, considering that the body state of TaNiTe is centrosymmetric, the resulting nonlinear response can be attributed to two aspects: on the one hand, the contribution of the intrinsic Berry curvature dipole caused by surface distortion, and on the other hand, the effect of external scattering.

[0079] The photoelectric response performance of the room temperature terahertz Hall rectifier provided in Example 1 is tested. The principle is as follows: first, a microwave source and a terahertz frequency multiplier are used to generate electromagnetic waves of 0.02 to 0.81 THz. The emitted electromagnetic waves are irradiated onto the surface of the device under test (i.e., the room temperature terahertz Hall rectifier provided in Example 1). The device under test can receive the alternating electromagnetic wave signal and convert it into a direct current signal. The direct current signal output is amplified by a preamplifier and then input into a phase-locked amplifier and an oscilloscope respectively. Finally, the signal is collected and recorded by a computer. The detailed test steps are as follows: The specific process is as follows:

[0080] a) According to Figure 8 b) assemble the test system and the device according to the system device diagram shown in the figure, and pre-set the system parameters; b) adjust the test system and the device to make the system and the device in normal working state; c) adjust the terahertz frequency multiplier, select the corresponding test frequency, and fix the test position of the device under test so that the device under test is placed in the vertical radiation position of the source; d) perform frequency scanning under computer control, and the data acquisition system measures the output voltage signal V of the detector in each frequency band λ; e) The photocurrent generated by the device can be calculated based on the output voltage signal.

[0081] Test results see Figures 9 to 11 , Fig. 9 A terahertz light response time diagram of the room temperature terahertz Hall rectifier provided in Example 1; Fig. 9 It is shown that under fast on / off terahertz radiation modulation when the output rise / fall time is 300ns, the rise and fall times of the room temperature terahertz Hall rectifier provided in Example 1 are approximately 800ns and 650ns.

[0082] Fig.10 The optical response of the room temperature terahertz Hall rectifier provided in Example 1 varies with frequency in different terahertz frequency bands. Fig.10 It is shown that the room temperature terahertz Hall rectifier provided in Example 1 has the response capability of a wide terahertz spectrum of 0.02 to 0.81 THz.

[0083] Fig.11 The room temperature terahertz Hall rectifier provided in Example 1 has a signal receiving capability when the RF source outputs at different set powers. Fig.11 It is shown that the room temperature terahertz Hall rectifier provided in Example 1 can detect signals when the output power of the microwave source is -17dBm.

[0084] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A room temperature terahertz Hall rectifier, comprising a substrate layer, an absorption layer and an oxidation-simulating medium protection layer, wherein the substrate layer and the absorption layer are stacked; The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers; The silicon dioxide layer is in contact with the absorption layer; The absorption layer includes dispersed tantalum-nickel-telluride layers and terminal metal electrode layers; the number of the terminal metal electrode layers is 4; the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum-nickel-telluride layers; the tantalum-nickel-telluride layer is located at the center of the region formed by the 4 terminal metal electrode layers; The tantalum-nickel-telluride layer and the terminal metal electrode layer are connected via a metal connecting rod; The pseudo-oxidation medium protection layer wraps the tantalum nickel telluride layer and the terminal metal electrode layer.

2. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The resistivity of the intrinsic high-resistance silicon layer is greater than or equal to 20,000 Ω·cm, and the thickness is 400-500 μm.

3. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The thickness of the silicon dioxide layer is 400-500 nm.

4. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The terminal metal electrode layer comprises a chromium layer and a gold layer stacked in layers, and the chromium layer is in contact with the silicon dioxide layer; The thickness of the chromium layer is 10-20 nm, and the thickness of the gold layer is 20-30 nm.

5. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The thickness of the tantalum-nickel-telluride layer is 30-80 nm.

6. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The metal connecting rod comprises a stacked chromium layer and a gold layer, wherein the chromium layer overlaps the tantalum-nickel-tellurium layer and the terminal metal electrode layer; the thickness of the chromium layer is 15-20 nm, and the thickness of the gold layer is 65-75 nm.

7. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The material of the imitation oxidation medium protection layer is boron nitride, and the thickness of the imitation oxidation medium protection layer is 10-30 nm.

8. The room temperature terahertz Hall rectifier according to claim 1, characterized in that: The room-temperature terahertz Hall rectifier further includes a PCB base, and the base layer in the room-temperature terahertz Hall rectifier is in contact with the PCB base.

9. The method for preparing a room temperature terahertz Hall rectifier according to any one of claims 1 to 8, characterized in that: The following steps are involved: (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers; (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer; (3) using electron beam lithography to photolithography the metal connecting rod structure, and then using electron beam evaporation to prepare the metal connecting rod; (4) The tantalum-nickel-telluride layer and the terminal metal electrode layer are wrapped with an oxidative medium protective layer to obtain the room temperature terahertz Hall rectifier.

10. Use of the room temperature terahertz Hall rectifier according to any one of claims 1 to 8 or the room temperature terahertz Hall rectifier prepared by the preparation method according to claim 9 in AC electromagnetic wave signal conversion.

Images