Semiconductor device

Abstract

Provided is a highly reliable semiconductor device. According to one embodiment, a semiconductor device includes: a particle; a first conductor and a second conductor that sandwich the particles in a first direction; a first joining member that joins the particles and the first conductor; and a second joining member that joins the particles and the second conductor, a first surface of the first conductor facing the particles has a plurality of protrusions that overlap the particles when viewed in the first direction and a groove provided so as to surround the particles, the design value of the height of the plurality of protrusions being a first value, and the design value of the height of the plurality of protrusions being a second value. The volume of the groove is set based on a volume of a portion sandwiched between the particle and the first conductor in a case where a first height between the particle and the first conductor is a second value greater than the first value.

Description

Technical Field

[0001] An embodiment of the present invention relates to a semiconductor device. Background Art

[0002] There is known a semiconductor device having a structure in which the upper and lower surfaces of a pellet are connected to a conductor via a bonding material.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-016603

[0006] Patent Document 2: Japanese Patent Application Publication No. 2012-104709

[0007] Patent Document 3: Japanese Patent Application Publication No. 2007-096042 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] Provided is a semiconductor device with high reliability.

[0010] Solutions for solving technical problems

[0011] A semiconductor device of an embodiment comprises: a particle; a first conductor and a second conductor, which sandwich the particle in a first direction; a first bonding member, which bonds the particle and the first conductor; and a second bonding member, which bonds the particle and the second conductor, wherein a first surface of the first conductor opposite to the particle has a plurality of protrusions overlapping with the particle when viewed in the first direction and a groove arranged to surround the particle, a design value of the height of the plurality of protrusions is a first value, and a volume of the groove is set based on the volume of a portion sandwiched between the particle and the first conductor when a first height between the particle and the first conductor is a second value larger than the first value. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a perspective view showing an example of the appearance of a semiconductor device according to an embodiment.

[0013] Figure 2 This is an exploded view showing an example of the internal structure of the semiconductor device according to the embodiment.

[0014] Figure 3 It is a plan view showing an example of a planar layout of a semiconductor device according to an embodiment.

[0015] Figure 4An example of a cross-sectional structure of a semiconductor device according to an embodiment is shown along Figure 3 A cross-sectional view taken along line IV-IV.

[0016] Figure 5 It is a plan view showing an example of a planar layout of a semiconductor device according to a first modification.

[0017] Figure 6 1 is a plan view showing an example of a planar layout of a semiconductor device according to a second modification.

[0018] Figure 7 1 is a plan view showing an example of a planar layout of a semiconductor device according to a third modification. DETAILED DESCRIPTION

[0019] Hereinafter, the embodiments will be described with reference to the drawings. The dimensions and ratios in the drawings are not necessarily the same as the actual ones.

[0020] In the following description, components having substantially the same function and structure are denoted by the same reference numerals. In order to distinguish components having the same structure from each other, different characters or numbers may be added to the end of the same reference numerals.

[0021] 1. Implementation Method

[0022] A semiconductor device according to an embodiment will be described.

[0023] Figure 1 1 is a perspective view showing an example of the appearance of a semiconductor device according to an embodiment. The semiconductor device 1 is an industrial power device. The semiconductor device 1 has, for example, a thin rectangular parallelepiped shape. Hereinafter, the thickness direction of the semiconductor device 1 is referred to as the up-down direction or the Z direction. In addition, when the components of the semiconductor device 1 have two surfaces facing each other in the up-down direction, the two surfaces are referred to as the lower surface and the upper surface, respectively. In addition, two directions perpendicular to each other in a plane perpendicular to the Z direction are referred to as the X direction and the Y direction.

[0024] The semiconductor device 1 includes a collector electrode 10, two emitter electrodes 20, two gate electrodes 30, and a sealing member 40. The collector electrode 10, two emitter electrodes 20, and two gate electrodes 30 each have a portion exposed to the outside of the sealing member 40 as a terminal for achieving electrical connection with the outside.

[0025] The collector electrode 10 and the two emitter electrodes 20 are respectively provided to be exposed on the lower surface and the upper surface of the sealing member 40. For example, the exposed surface of the collector electrode 10 and the exposed surfaces of the two emitter electrodes 20 are respectively flush with the lower surface and the upper surface of the sealing member 40. When viewed in the thickness direction, the exposed surfaces of the two emitter electrodes 20 are included in the exposed surface of the collector electrode 10.

[0026] The two gate electrodes 30 are provided so as to be exposed on the side surface of the sealing member 40. For example, the two gate electrodes 30 protrude from the side surface of the sealing member 40.

[0027] The sealing member 40 is an insulating member that protects the internal structure of the semiconductor device 1 from external physical and electrical influences. The sealing member 40 forms the outer shape of the semiconductor device 1 .

[0028] Figure 2 FIG. 1 is an exploded view showing an example of the internal structure of a semiconductor device according to an embodiment. Figure 2 , the internal structure of the semiconductor device 1 is schematically shown exploded in the thickness direction. Figure 2 In the figure, the sealing member 40 is omitted. The semiconductor device 1 includes two bonding members 50 , two particles 60 , two bonding members 70 , and two wires 80 as an internal structure in addition to the collector electrode 10 , two emitter electrodes 20 , and two gate electrodes 30 .

[0029] The collector electrode 10 and the emitter electrode 20 are each a copper plate having a thickness of about 1.5 mm, for example. The lower surface of the collector electrode 10 corresponds to the surface of the collector electrode 10 exposed from the seal 40. The lower surface of the collector electrode 10 has flatness, for example, over the entire surface. A more specific structure of the collector electrode 10 will be described later. The upper surface of the emitter electrode 20 corresponds to the surface of the emitter electrode 20 exposed from the seal 40. The upper surface of the emitter electrode 20 has flatness, for example, over the entire surface.

[0030] Two bonding members 50 are provided on the upper surface of the collector electrode 10 so as to be separated from each other. The bonding member 50 is, for example, a plate-shaped solder. The bonding member 50 is provided between the collector electrode 10 and the corresponding particle 60 .

[0031] The particle 60 is a power semiconductor chip. Specifically, for example, the particle 60 is an insulated gate bipolar transistor (IGBT) or a field effect transistor (MOSFET) using silicon carbide (SiC). In addition, when the particle 60 is a MOSFET using SiC, the collector electrode 10 and the emitter electrode 20 are replaced by a drain electrode and a source electrode, respectively.

[0032] The lower surface of the particle 60 is used as an electrode corresponding to the collector. The lower surface of the particle 60 is electrically connected to the collector electrode 10 via the bonding member 50. The area of ​​the lower surface of the particle 60 is smaller than that of the collector electrode 10. A pad corresponding to the emitter and a pad corresponding to the gate are provided on the upper surface of the particle 60. The area of ​​the upper surface of the particle 60 is larger than that of the emitter electrode 20.

[0033] The corresponding bonding material 70 is provided on the upper surface of the particle 60, including the pad corresponding to the emitter and excluding the pad corresponding to the gate. The bonding material 70 is, for example, a plate-shaped solder. The corresponding emitter electrode 20 is provided on the upper surface of the bonding material 70.

[0034] One end of a corresponding wire 80 is disposed on a pad corresponding to the gate electrode on the upper surface of the particle 60 . The wire 80 is a bonding wire. The other end of the wire 80 is connected to the corresponding gate electrode 30 .

[0035] For example, the two particles 60 are arranged in a row along the Y direction.

[0036] With the above structure, inside the semiconductor device 1, three terminals for input and output of the particle 60 are electrically connected to the collector electrode 10, the emitter electrode 20, and the gate electrode 30. The bonding members 50 and 70 realize the electrical connection between the particle 60 and the terminals, and have the function of dissipating the heat generated by the particle 60 in the upward and downward directions.

[0037] In addition, Figure 1 and Figure 2 In the above description, two particles 60 are provided in the semiconductor device 1, but the present invention is not limited thereto. The number of particles 60 provided in the semiconductor device 1 may be one or three or more.

[0038] Figure 3 It is a plan view showing an example of a planar layout of a semiconductor device according to an embodiment. Figure 4 An example of a cross-sectional structure of a semiconductor device according to an embodiment is shown along Figure 3 In addition, Figure 3 as well as Figure 4 In the figure, the seal 40 is omitted.

[0039] For example, four collector protrusions P corresponding to each particle 60 are provided on the upper surface of the collector electrode 10. That is, when the semiconductor device 1 includes two particles 60, eight collector protrusions P are provided on the upper portion of the collector electrode 10. The collector protrusions P corresponding to each particle 60 are provided so as to overlap with the particle 60 when viewed in the Z direction. With the above structure, each particle 60 can contact the upper surface of the four collector protrusions P. In addition, the number of collector protrusions P corresponding to each particle 60 is not limited to four. The number of collector protrusions P corresponding to each particle 60 may be three or more.

[0040] The height t1 of the collector protrusion P in the Z direction is, for example, greater than 100 μm. The collector protrusion P on the collector electrode 10 has a deviation, and the height t1 has a deviation from the design value. That is, the heights of the plurality of collector protrusions P have values ​​greater than a minimum value and less than a maximum value. For example, when the design value of the height of the collector protrusion P is 150 μm, and the height of the collector protrusion P deviates by ±20 μm from the design value, the heights of the plurality of collector protrusions P may be greater than 130 μm and less than 170 μm, respectively. In addition, for example, when the design value is 200 μm and the height of the collector protrusion P deviates by ±20 μm from the design value, the heights of the plurality of collector protrusions P may be greater than 180 μm and less than 220 μm, respectively. The maximum and minimum values ​​of the height can be determined, for example, based on the design value and processing accuracy.

[0041] The bonding material 50 is provided to fill the space between the upper surface of the collector electrode 10 and each particle 60 supported by the collector protrusion P. Therefore, the thickness of the bonding material 50 is, for example, 100 μm or more, similar to the height t1 of the collector protrusion P.

[0042] The collector electrode 10 has, for example, two grooves G disposed on its upper portion. The grooves G are disposed corresponding to the particles 60 , respectively. Thus, the two grooves G are disposed, for example, in a manner aligned along the Y direction. The height of the upper surface of the collector electrode 10 excluding the collector protrusions P and the grooves G is, for example, substantially equal.

[0043] When viewed from the Z direction, each groove G is provided so as to surround the rectangular region R, for example. The width in the Y direction of the portion of the groove G extending along the X direction (the portion of the groove G in contact with the side of the region R extending along the X direction) and the width in the X direction of the portion of the groove G extending along the Y direction (the portion of the groove G in contact with the side of the region R extending along the Y direction) are, for example, substantially equal. In addition, in the following description, the width in the Y direction of the portion of the groove G extending along the X direction and the width in the X direction of the portion of the groove G extending along the Y direction are also referred to as the width of the groove G, respectively.

[0044] When viewed from the Z direction, the area of ​​each region R is larger than the area of ​​the lower surface of the particle 60. When viewed from the Z direction, the lower surface of each particle 60 is included in the region R corresponding to the particle 60. At one end and the other end of the particle 60 in the X direction, the width w1 between the particle 60 and the groove G is, for example, about 200 μm. In addition, although not shown in the figure, at one end and the other end of the particle 60 in the Y direction, the width between the particle 60 and the groove G is, for example, about 200 μm. Through the above structure, the collector protrusion P corresponding to each particle 60 is arranged in the region R corresponding to the particle 60.

[0045] A portion of the bonding material 50 can be included inside the groove G. To supplement, the semiconductor device 1 of the above structure is formed by filling the bonding material 50 between the collector electrode 10 and the particle 60, filling the bonding material 70 between the particle 60 and the emitter electrode 20, and then pressing the collection of these components in the up and down directions using a weight not shown. Thus, in this process, a force is exerted on the bonding material 50 to squeeze it out from between the particle 60 and the collector electrode 10. The amount of bonding material 50 used for filling between the collector electrode 10 and the particle 60 is set, for example, to fill the space between the collector electrode 10 and the particle 60 when the height of all the collector protrusions P is the maximum value of the height of the collector protrusion P. Through the above formation method, there is a situation where excess bonding material 50 flows out to the outside of the particle 60 when viewed along the Z direction. In addition, the portion of the bonding material 50 that flows out is sometimes contained inside the groove G.

[0046] Taking into account the portion of the bonding member 50 that is formed to flow out as described above, the groove G is constructed based on the volume of the portion sandwiched between the collector electrode 10 and the particle 60 when the height of the collector protrusion P (and the height of the portion sandwiched by the collector electrode 10 and the particle 60) is at a maximum value. More specifically, the groove G is constructed, for example, to have a volume greater than the volume obtained by subtracting the volume of the above portion when the height of the collector protrusion P is a design value from the volume of the above portion when the height of the collector protrusion P is a maximum value. In addition, in such a structure of the groove G, the volume of the groove G can also be set based on, for example, an average value, a median value, etc. of the heights of a plurality of collector protrusions P, instead of being set based on the design value of the height of the collector protrusion P.

[0047] According to the embodiment, the upper portion of the collector electrode 10 includes a groove G provided in a manner of surrounding the particle 60 at a portion outside the particle 60 when viewed from above, and a collector protrusion P provided in a manner of overlapping the particle 60. The volume of the groove G is provided based on the volume of the portion sandwiched between the collector electrode 10 and each particle 60 when the height of the collector protrusion P is at a maximum value. More specifically, the groove G is configured to have a volume greater than the volume obtained by subtracting the volume of the sandwiched portion when the height of the collector protrusion P is a reference value from the volume of the sandwiched portion when the height of the collector protrusion P is at a maximum value. With the above structure, even if the solder flows out from between the collector electrode 10 and the particle 60 when pressed in the up-down direction during the manufacturing process, it is possible to suppress the solder from excessively spreading on the upper surface of the collector electrode 10. Therefore, it is possible to suppress the seal 40 from being easily peeled off due to the solder that is not bonded to the seal 40 spreading on the upper surface of the collector electrode. Therefore, it is possible to suppress reliability degradation of the semiconductor device 1 .

[0048] 2. Modification

[0049] Next, a semiconductor device according to a modified example will be described. Hereinafter, the structure of the semiconductor device according to the modified example will be mainly described for the parts that are different from the structure of the semiconductor device according to the embodiment. The description of the same structure as that of the embodiment will be appropriately omitted.

[0050] 2.1 First Modification

[0051] The first modified example is different from the embodiment in that the groove includes a portion having a width wider than other portions when viewed in the Z direction.

[0052] Figure 5 It is a plan view showing an example of a planar layout of a semiconductor device according to a first modification. Figure 5 Corresponds to Figure 3 In addition, Figure 5In FIG. 1 , the emitter electrode 20, the gate electrode 30, and the wire 80 are omitted. Figure 5 In FIG. 1 , the region where the particles 60 are disposed is indicated by a dotted line.

[0053] In the semiconductor device 1a of the first modified example, in the X direction, the first portion of the collector electrode 10 provided on the one end side of the particle 60 has a width w2. The first portion is a portion between one end of the particle 60 and the side of the one end side of the collector electrode 10 in the X direction. In addition, in the X direction, the second portion of the collector electrode 10 provided on the other end side of the particle 60 has a width w3. The second portion is a portion between the other end of the particle 60 in the X direction and the side of the other end side of the collector electrode 10. In addition, in the Y direction, the third portion of the collector electrode 10 provided on the one end side of the particle 60 of the two particles 60 has a width w4. The third portion is a portion between one end of the particle 60 of the one end side in the Y direction and the side of the one end side of the collector electrode 10. In addition, in the Y direction, the fourth portion of the collector electrode 10 provided on the other end side of the particle 60 of the two particles 60 has a width w5. The fourth portion is a portion between the other end of the particle 60 on the other end side in the Y direction and the side on the other end side of the collector electrode 10. The widths w2 and w3 are, for example, wider than the widths w4 and w5.

[0054] The portion of the groove Ga extending along the Y direction includes, for example, a portion WPa having a width wider than other portions of the groove Ga. That is, in the first portion and the second portion having a width wider than the third portion and the fourth portion, the groove Ga includes the portion WPa having a width wider than the third portion and the fourth portion. The widths of the groove Ga in the other portions except the portion WPa are, for example, the same. Figure 5 In the example shown, each groove Ga has two parts WPa. However, the present invention is not limited thereto. The number of parts WPa each groove Ga has may be 1 or 3 or more.

[0055] In the above description, the first portion, the second portion, the third portion, and the fourth portion may be respectively the portion of the collector electrode 10 provided on the one end side of the region Ra on the inner side of the groove Ga in the X direction, the portion of the collector electrode 10 provided on the other end side of the region Ra in the X direction, the portion of the collector electrode 10 provided on the one end side of the region Ra on the one end side of the two regions Ra in the Y direction, and the portion of the collector electrode 10 provided on the other end side of the region Ra on the other end side of the two regions Ra in the Y direction. In this case, the first portion, the second portion, the third portion, and the fourth portion are respectively the portion between the side on the one end side of the region Ra in the X direction and the side on the one end side of the collector electrode 10, the portion between the side on the other end side of the region Ra in the X direction and the side on the other end side of the collector electrode 10, the portion between one end of the region Ra on the one end side in the Y direction and the side on the one end side of the collector electrode 10, and the portion between the other end of the region Ra on the other end side in the Y direction and the side on the other end side of the collector electrode 10.

[0056] The first modification also provides the same effects as those of the embodiment.

[0057] In addition, the groove Ga includes a portion WPa with a wider width in the first portion and the second portion which are wider than the third portion and the fourth portion. Thus, it is possible to suppress the increase in the size of the semiconductor device 1a, and to ensure the portion of the collector electrode 10a bonded to the seal 40 in the area outside the groove Ga. To supplement, for example, in the case where the groove includes a portion with a wider width than other portions in the third portion and the fourth portion which are narrower than the first portion and the second portion, it may not be possible to fully ensure the portion of the collector electrode bonded to the seal in the area outside the groove. According to the first variant, by means of the above-mentioned structure, it is possible to ensure the portion of the collector electrode bonded to the seal without increasing the size of the collector electrode and the semiconductor device.

[0058] 2.2 Second Modification

[0059] The second modification example is different from the embodiment in that the collector electrode has a non-wettable region.

[0060] Figure 6 It is a plan view showing an example of a planar layout of a semiconductor device according to a second modification. Figure 6 Corresponds to Figure 3 and Figure 5 In addition, Figure 6 In, with Figure 5 Similarly, the emitter electrode 20, the gate electrode 30, and the wire 80 are omitted. Figure 6 In, with Figure 5Likewise, the region where the particles 60 are provided is indicated by a dotted line.

[0061] In the semiconductor device 1b of the second variant, a non-wetting region NWb is provided in a region Rb of the collector electrode 10b that is closer to the inner side than the groove Gb. The non-wetting region NWb is a region where solder is difficult to flow and difficult to set. The non-wetting region NWb is formed by applying a resist or performing an oxidation process based on a laser. The non-wetting region NWb is partially provided in the outer peripheral portion of the region Rb that is closer to the inner side than the groove Gb. In addition, in the following description, the region Rb where the non-wetting region NWb is not provided is referred to as the wetting region Wb.

[0062] The wetted area Wb is provided in contact with the groove Gb. Figure 6 In the example shown, the wetting area Wb is provided in contact with two portions of the grooves Gb extending in the X direction and two portions of the grooves Gb extending in the Y direction. In addition, the non-wetting area NWb and the wetting area Wb in contact with the grooves Gb may be provided in the outer peripheral portion of the region Rb inside the grooves Gb, and the number of locations where the wetting area Wb and the grooves Gb are in contact is not limited to four. The number of locations where the wetting area Wb and the grooves Gb are in contact may be 1 to 3 or 5 or more.

[0063] The second modification also provides the same effects as those of the embodiment.

[0064] In addition, according to the second modification, the non-wetting region NWb and the wetting region Wb connected to the groove Gb are provided in the outer peripheral portion of the region Rb on the inner side of the groove Gb. Thus, in the manufacturing process, the portion where the solder flows out when the solder flows out from between the collector electrode 10 and the particle 60 can be limited. Therefore, the solder can be prevented from excessively flowing out from between the collector electrode 10 and the particle 60. Therefore, the generation of solder shrinkage cavities (cracks, etc.) can be prevented.

[0065] 2.3 Third Modification

[0066] The third modification example is different from the first modification example in that the collector electrode has a non-wettable region.

[0067] Figure 7 It is a plan view showing an example of a planar layout of a semiconductor device according to a third modification. Figure 7 Corresponds to Figure 3 , Figure 5 and Figure 6 In addition, Figure 7 In, with Figure 5 as well as Figure 6 Similarly, the emitter electrode 20, the gate electrode 30, and the wire 80 are omitted. Figure 7 In, with Figure 5 and Figure 6Likewise, the region where the particles 60 are provided is indicated by a dotted line.

[0068] In the semiconductor device 1c of the third modification, similarly to the portion WPa in the groove Ga of the first modification, the wide portion WPc in the groove Gc is provided in the first portion and the second portion which are wider than the third portion and the fourth portion. That is, the wide portion WPc is included in the portion of the groove Gc extending along the Y direction.

[0069] In addition, in the semiconductor device 1c of the third variant, similar to the non-wetting area NWb of the second variant, the non-wetting area NWc is locally arranged in the outer periphery of the region Rc that is closer to the inside than the groove Gc. In addition, the wetting area Wc is arranged in a manner connected to the groove Gc. In the third variant, the wetting area Wc is arranged corresponding to the wide portion WPc. More specifically, each wetting area Wc is connected to the corresponding portion WPc. The length of each wetting area Wc along the Y direction is shorter than the length of the corresponding wide portion WPc along the Y direction, for example. When viewed in the X direction, the wetting areas Wc are respectively arranged in a manner overlapping with the corresponding wide portion WPc. In the above structure, the non-wetting area NWc is arranged as a whole in the outer periphery of the region Rc except for the wetting area Wc connected to the portion WPc.

[0070] According to the third modification, the same effects as those of the embodiment, the first modification, and the second modification are achieved.

[0071] In addition, according to the third modification, the wetting region Wc is provided so as to be in contact with the corresponding wide portion WPc. Thus, in the manufacturing process, when the solder flows out from between the collector electrode 10 and the particle 60, the solder easily flows out to the wide portion WPc through the portion in contact with the groove Gc of the wetting region Wc. According to such a structure, in the manufacturing process, when the solder flows out from between the collector electrode 10 and the particle 60, it is also possible to suppress the solder from flowing out to the outside of the groove Gc.

[0072] 3. Others

[0073] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope or subject matter of the invention, and are also included in the invention described in the claims and the scope of their equivalents.

Claims

1. A semiconductor device, characterized in that: have: Particles; A first conductor and a second conductor sandwiching the particle in a first direction; a first bonding member, bonding the particles and the first conductor; as well as a second bonding member bonding the particles and the second conductor; The first surface of the first conductor facing the particle has a plurality of protrusions overlapping the particle when viewed in the first direction, and a groove provided so as to surround the particle. The design value of the height of the plurality of protrusions is a first value, The volume of the groove is set based on the volume of a portion sandwiched between the particle and the first conductor when a first height between the particle and the first conductor is a second value greater than the first value.

2. The semiconductor device according to claim 1, wherein: The volume of the groove is equal to or larger than a volume obtained by subtracting a volume of the sandwiched portion when the first height is the first value from a volume of the sandwiched portion when the first height is the second value.

3. The semiconductor device according to claim 1, wherein: The second value is a maximum value among the deviations in heights of the plurality of protrusions.

4. The semiconductor device according to claim 1, wherein: The number of the plurality of protrusions is 3 or more.

5. The semiconductor device according to any one of claims 1 to 4, characterized in that In the first conductor, The width of the first portion outside the particle is a first width, A second portion different from the first portion and located outside the particle has a second width narrower than the first width, The groove includes, in the first portion, a first groove portion having a width wider than a width of the groove in the second portion.

6. The semiconductor device according to any one of claims 1 to 4, characterized in that When viewed in the first direction, a non-wetting region provided locally at the outer periphery and a wettable region in contact with the groove are provided in a region inside the groove in the first conductor.

7. The semiconductor device according to claim 6, wherein: The non-wetting region is a region where resist coating or oxidation treatment has been performed.

8. The semiconductor device according to claim 5, wherein: When viewed in the first direction, a non-wetting region provided locally at the outer periphery and a wettable region in contact with the first groove portion are provided in the region inside the groove in the first conductor.

9. The semiconductor device according to claim 8, wherein: The non-wetting region is provided in the entire region of the outer peripheral portion except for the wetting region.

10. The semiconductor device according to claim 1, wherein: The first bonding member and the second bonding member include solder.

11. The semiconductor device according to claim 1, wherein: The particles, the first bonding member, and the second bonding member are sealed by a sealing member, The first conductor and the second conductor each have at least a portion exposed from the sealing member.

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