Anti-reflection cover plate and preparation method thereof

Abstract

The invention discloses a preparation method of an anti-reflection cover plate. The preparation method comprises the following steps: S1, carrying out surface cleaning and activation on a glass substrate; s2, the glass substrate treated in the step S1 is placed in an evaporation coating chamber, plasma cleaning is conducted on the glass substrate under the vacuum condition, then an anti-reflection and anti-reflection layer is deposited on the surface of the glass substrate, and the anti-reflection and anti-reflection layer comprises a medium-refractive-index film layer, a plurality of low-refractive-index film layers and a plurality of high-refractive-index film layers; wherein the medium-refractive-index film layer is attached to the surface of the glass substrate, the multiple low-refractive-index film layers and the multiple high-refractive-index film layers are alternately arranged on the medium-refractive-index film layer, and the film layer located on the outer side is the low-refractive-index film layer; s3, performing plasma etching on the surface of the antireflection layer of the glass cover plate obtained in the step S2 in a vacuum chamber; and S4, evaporating and depositing an antifouling layer on the surface of the antireflection layer treated in the step S3 in the vacuum chamber. The preparation method provided by the invention is simple in process, and the hardness and wear resistance of the cover plate can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of glass surface treatment, and in particular to an anti-reflection and anti-transmission cover plate and a preparation method thereof. Background Art

[0002] With the rapid development of digital touch products such as mobile phones, laptops, and car-mounted products, screen window covers need to meet higher performance requirements. Not only do they need to take into account higher transmittance requirements, but they also place higher requirements on the hardness and scratch resistance of the screen window covers.

[0003] Conventional evaporation coating processes are limited by coating materials and film deposition density, resulting in evaporation coating hardness and wear resistance that are inferior to magnetron sputtering coating, which limits the application of evaporation coating methods on screen window covers, causing equipment idleness and waste. Summary of the invention

[0004] The object of the present invention is to provide an anti-reflection and anti-reflection cover plate and a preparation method thereof, which has a simple process and can improve the hardness and wear resistance of the cover plate.

[0005] Based on the above problems, the technical solution provided by the present invention is:

[0006] A method for preparing an anti-reflection and anti-reflection cover plate comprises the following steps:

[0007] S1. Cleaning and activating the surface of the glass substrate;

[0008] S2, placing the glass substrate processed in step S1 in an evaporation coating chamber, plasma cleaning the glass substrate under vacuum conditions, and then depositing an anti-reflection and anti-reflection layer on the surface of the glass substrate, wherein the anti-reflection and anti-reflection film layer comprises a medium refractive index film layer, a plurality of low refractive index film layers and a plurality of high refractive index film layers, wherein the medium refractive index film layer is attached to the surface of the glass substrate, the plurality of low refractive index film layers and the plurality of high refractive index film layers are alternately arranged on the medium refractive index film layer and the film layer located on the outside is the low refractive index film layer, the medium refractive index film layer is a SION film layer, the low refractive index film layer is a SiO2 film layer, and the high refractive index film layer is a Si3N4 film layer;

[0009] S3, performing plasma etching on the surface of the anti-reflection and anti-reflection layer of the glass cover plate obtained in step S2 in a vacuum chamber;

[0010] S4, depositing an anti-fouling layer by evaporation on the surface of the anti-reflection and anti-transmission layer treated in step S3 in a vacuum chamber.

[0011] In some embodiments, in step S2, an evaporation coating machine with a radio frequency ion source is used to deposit the anti-reflection and anti-reflection layer.

[0012] In some embodiments, the deposition of the anti-reflection and anti-reflection layer in step S2 includes the following steps:

[0013] S21, fixing the glass substrate processed in step S1 on an umbrella-shaped rotating frame of an evaporation coating machine and closing the coating chamber of the evaporation coating machine;

[0014] S22, the coating chamber of the evaporation coating machine is evacuated, and the rotary vane pump, the roots pump, and the diffusion pump are turned on in sequence, and the heating is turned on during the evacuation process, and the heating temperature is 50-70° C.;

[0015] S23, plasma cleaning, starting the radio frequency ion source when the vacuum degree is 0.002-0.003Pa, the screen grid voltage of the radio frequency ion source plasma cleaning is 700-900V, the screen grid current is 700-900mA, the accelerating electrode voltage is 600-900V, and the oxygen plasma cleaning is performed under the conditions of argon flux 0-10sccm, oxygen flux 30-50sccm, and umbrella frame rotation speed 10-20r / min;

[0016] S24, depositing a SiNO film layer, using a radio frequency ion source assisted deposition process to prepare the SiON film layer, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a SiON film layer, wherein nitrogen is 30-70 sccm, oxygen is 2-10 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200 V, the screen grid current is 800-1000 mA, and the accelerating electrode voltage is 600-800 V for deposition;

[0017] S25, depositing a Si3N4 film layer, using a radio frequency ion source assisted deposition process to prepare the Si3N4 film layer, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a Si3N4 film layer, wherein nitrogen is 30-100 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200V, the screen grid current is 800-1000mA, and the accelerating electrode voltage is 600-800V for deposition;

[0018] S26, depositing a SiO2 film layer, placing a crystalline SiO2 material in a copper crucible of an evaporation chamber, and then using an electron gun to excite an electron beam current to heat the material in the crucible, so that the crystalline SiO2 material is heated and evaporated and deposited on a glass substrate, wherein the electron gun current is 100-150 mA, the deposition rate is 1-4 A / s, and the deposition process adopts a radio frequency ion source to assist deposition, with 10-30 sccm of oxygen, 0-10 sccm of argon, a screen grid voltage of 800-1200 V, a screen grid current of 800-1000 mA, and an accelerating electrode voltage of 600-800 V for deposition;

[0019] S27, repeating step S25 and step S26 to deposit alternating low refractive index film layers and high refractive index film layers.

[0020] In some embodiments, in step S2, the refractive index of the low refractive index film layer is 1.46-1.50, the refractive index of the medium refractive index film layer is 1.7-1.8, and the refractive index of the high refractive index film layer is 1.95-2.05.

[0021] In some of the embodiments, the anti-reflection and anti-reflection layer in step S2 is a five-layer film structure, which is, from close to the glass substrate to away from the glass substrate, a SiON film layer of 60-70nm, a Si3N4 film layer of 135-140nm, a SiO2 film layer of 8-12nm, a Si3N4 film layer of 135-145nm, and a SiO2 film layer of 80-90nm.

[0022] In some embodiments, the anti-reflection and anti-reflection layer in step S2 is an eight-layer film structure, which is, from close to the glass substrate to away from the glass substrate, SiON film layer 15-25nm, SiO2 film layer 25-30nm, Si3N4 film layer 110-120nm, SiO2 film layer 8-12nm, Si3N4 film layer 35-45nm, SiO2 film layer 65-75nm, Si3N4 film layer 10-20nm, and SiO2 film layer 15-25nm.

[0023] In some embodiments, CF4 gas plasma etching is used in step S3, and the parameters are RF ion source screen grid voltage 800-1200V, screen grid current 700-900mA, accelerating electrode voltage 700-900V, carbon tetrafluoride 2-10sccm, oxygen 40-60sccm, and etching time 5-15min.

[0024] In some embodiments, in step S4, the antifouling material is placed in advance in a molybdenum boat for evaporation of the drug alkane in the evaporation coating chamber, and the antifouling material is evaporated onto the surface of the antireflection and anti-reflection layer obtained in step S3 at an evaporation current of 90 mA.

[0025] In some embodiments, the antifouling material in step S4 is an AF solution containing a fluorinated silane polymer.

[0026] Based on the above problems, the present invention also provides another technical solution:

[0027] An anti-reflection and anti-reflection cover plate is prepared according to any one of the above-mentioned methods for preparing an anti-reflection and anti-reflection cover plate.

[0028] Compared with the prior art, the advantages of the present invention are:

[0029] (1) The cover plate is deposited with an anti-reflection and anti-reflection film layer by evaporation deposition, which has low requirements on the evaporation deposition machine and only requires an ordinary machine. In addition, the evaporation material only needs to be selected from crystalline SiO2, reaction gas: SiHH4, N2, O2, CF4, and protective gas: Ar, which can achieve high hardness and ultra-wear resistance. In addition, the structure of the cover plate is simple, and the process flow is simple and easy to operate, which greatly improves the yield rate of the finished product of the cover plate;

[0030] (2) The cover plate prepared by this method has high hardness and super wear resistance, the pencil hardness can reach 9H, the Vickers hardness is 11-15GPa, and the Mohs hardness can reach above level 6. In addition, the microscopic morphology Ra of this cover plate is 1-3nm, the microscopic morphology sharpness Psk is much less than 0, the microstructure is relatively rounded, and the dynamic friction coefficient of this cover plate is less than 0.05. The surface is flat and smooth. Therefore, the cover plate has excellent friction resistance. The anti-reflection and anti-reflection film layer is formed by deposition of high, medium and low refractive index materials Si3N4, SION, and SiO2, which can achieve a transmittance of more than 94% in the visible light range of 400nm to 700nm, and has excellent anti-reflection and anti-reflection effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. The accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0032] Figure 1 It is a structural schematic diagram of an embodiment of an anti-reflection and anti-reflection cover plate of the present invention;

[0033] Figure 2 Schematic diagram of the structure of the anti-reflection and anti-transmission layer in Example 1 of the present invention;

[0034] Figure 3 Schematic diagram of the structure of the anti-reflection and anti-transmission layer in Example 2 of the present invention;

[0035] in:

[0036] 1. Glass substrate;

[0037] 2. Anti-reflection and anti-reflection layer; 2-1. SiON film layer; 2-2. Si3N4 film layer; 2-3. SiO2 film layer;

[0038] 3. Anti-fouling layer. DETAILED DESCRIPTION

[0039] The above scheme is further described below in conjunction with specific examples. It should be understood that these examples are used to illustrate the present invention and are not limited to the scope of the present invention. The implementation conditions adopted in the examples can be further adjusted according to the conditions of the specific manufacturer, and the unspecified implementation conditions are usually the conditions in conventional experiments.

[0040] A method for preparing an anti-reflection and anti-reflection cover plate comprises the following steps:

[0041] S1. Cleaning and activating the surface of the glass substrate;

[0042] S2, placing the glass substrate processed in step S1 in an evaporation coating chamber, plasma cleaning the glass substrate under vacuum conditions, and then depositing an anti-reflection and anti-reflection layer on the surface of the glass substrate, wherein the anti-reflection and anti-reflection film layer comprises a medium refractive index film layer, a plurality of low refractive index film layers and a plurality of high refractive index film layers, wherein the medium refractive index film layer is attached to the surface of the glass substrate, the plurality of low refractive index film layers and the plurality of high refractive index film layers are alternately arranged on the medium refractive index film layer and the film layer located on the outside is the low refractive index film layer, the medium refractive index film layer is a SION film layer, the low refractive index film layer is a SiO2 film layer, and the high refractive index film layer is a Si3N4 film layer;

[0043] S3, plasma etching the surface of the anti-reflection and anti-reflection layer of the glass cover plate obtained in step S2 in an evaporation coating vacuum chamber;

[0044] S4, depositing an anti-fouling layer by evaporation deposition on the surface of the anti-reflection and anti-transmission layer treated in step S3 in an evaporation coating vacuum chamber.

[0045] In step S1, a Hekeda flatbed cleaning machine is used to clean and activate the surface of the glass substrate, which is sequentially cleaned by immersion in a neutral detergent tank, soaked in a pure water tank, sprayed in a pure water spray tank, and dried in a drying tank, etc., to clean and activate the surface to be coated, thereby improving the bonding strength between the film layer and the surface of the glass substrate.

[0046] Steps S2 to S4 are performed using a Han-1 2700 evaporation coating machine containing a radio frequency ion source.

[0047] The deposition of the anti-reflection and anti-reflection layer in step S2 includes the following steps:

[0048] S21, fixing the glass substrate processed in step S1 on an umbrella-shaped rotating rack of an evaporation coating machine and closing the coating chamber of the evaporation coating machine;

[0049] S22, the coating chamber of the evaporation coating machine is evacuated, and the rotary vane pump, the roots pump, and the diffusion pump are turned on in sequence, and the heating is turned on during the evacuation process, and the heating temperature is 50-70° C.;

[0050] S23, plasma cleaning, starting the radio frequency ion source when the vacuum degree is 0.002-0.003Pa, the radio frequency ion source plasma cleaning is performed with a screen grid voltage of 700-900V, a screen grid current of 700-900mA, an accelerating electrode voltage of 600-900V, an argon flux of 0-10sccm, an oxygen flux of 30-50sccm, and an umbrella frame rotation speed of 10-20r / min;

[0051] S24, depositing a SiON film layer, using a radio frequency ion source assisted deposition process, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a SiON film layer, wherein nitrogen is 30-70 sccm, oxygen is 2-10 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200V, the screen grid current is 800-1000mA, and the accelerating electrode voltage is 600-800V for deposition;

[0052] S25, depositing a Si3N4 film layer, using a radio frequency ion source assisted deposition process to prepare the Si3N4 film layer, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a Si3N4 film layer, wherein nitrogen is 30-100 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200V, the screen grid current is 800-1000mA, and the accelerating electrode voltage is 600-800V for deposition;

[0053] S26, depositing a SiO2 film layer, placing a crystalline SiO2 material in a copper crucible of an evaporation chamber, and then using an electron gun to excite an electron beam current to heat the material in the crucible, so that the crystalline SiO2 material is heated and evaporated and deposited on a glass substrate, wherein the electron gun current is 100-150 mA, the deposition rate is 1-4 A / s, and the deposition process adopts a radio frequency ion source to assist deposition, with 10-30 sccm of oxygen, 0-10 sccm of argon, a screen grid voltage of 800-1200 V, a screen grid current of 800-1000 mA, and an accelerating electrode voltage of 600-800 V for deposition;

[0054] S27, repeating step S25 and step S26 to deposit alternating low refractive index film layers and high refractive index film layers.

[0055] In step S2, the refractive index of the low refractive index film layer is 1.46-1.50, the refractive index of the medium refractive index film layer is 1.7-1.8, and the refractive index of the high refractive index film layer is 1.95-2.05.

[0056] In step S3, CF4 gas plasma etching is used to make the microscopic surface of the anti-reflection and anti-transmittance layer smoother and improve the friction resistance of the cover plate. The parameters are: RF ion source screen grid voltage 800-1200V, screen grid current 700-900mA, accelerating electrode voltage 700-900V, carbon tetrafluoride 2-10sccm, oxygen 40-60sccm, and etching time 5-15min.

[0057] In step S4, the antifouling material is placed in advance in a molybdenum boat for evaporation of the anti-reflection and anti-transmission layer in the evaporation coating chamber, and the antifouling material is evaporated onto the surface of the anti-reflection and anti-transmission layer obtained in step S3 at an evaporation current of 90 mA. The antifouling material is an AF solution containing a fluorinated silane polymer, and Zhongren AF anti-reflection, Hollis AF anti-reflection, and American PPG AF anti-reflection can be used.

[0058] The anti-reflection and anti-reflection cover plate prepared by the above method is as follows: Figure 1 As shown, it includes a glass substrate 1, an anti-reflection and anti-reflection layer 2 deposited on the surface of the glass substrate 1, and an anti-fouling layer 3 deposited on the surface of the anti-reflection and anti-reflection layer 2.

[0059] Example 1

[0060] like Figure 2 As shown, the anti-reflection and anti-reflection layer 2 is a five-layer film structure, including a medium refractive index film layer, two low refractive index film layers and two high refractive index film layers, and the high refractive index film layers and the low refractive index film layers are arranged alternately, from the direction close to the glass substrate to the direction away from the glass substrate, the SiON film layer 2-1 with a thickness of 60 to 70 nm, the Si3N4 film layer 2-2 with a thickness of 135 to 140 nm, the SiO2 film layer 2-3 with a thickness of 8 to 12 nm, the Si3N4 film layer 2-2 with a thickness of 135 to 145 nm, and the SiO2 film layer 2-3 with a thickness of 80 to 90 nm. In specific implementation, during the evaporation coating process, the thickness of each film layer is controlled by a film thickness meter.

[0061] In this example, the plasma cleaning process of step S23 is: starting the RF ion source when the vacuum degree of the evaporation coating chamber is 0.0025Pa, wherein the RF ion source processing conditions are: at an umbrella frame rotation speed of 10-20r / min, using a screen grid voltage of 800V, a screen grid current of 800mA, an accelerating electrode voltage of 600V, introducing 30sccm of reactive gas oxygen and 5sccm of protective gas argon, and processing time of 10min for plasma cleaning.

[0062] The process of depositing SiNO film layer in step S24 is as follows: preparation is carried out by adopting RF ion source assisted deposition process, silane and nitrogen are ionized under the screen grid electric field of RF ion source and then accelerated and deposited on the glass substrate through the accelerating electrode electric field to obtain SiON film layer, wherein the screen grid voltage is 1000V, the screen grid current is 800mA, the accelerating electrode voltage is 800V, and silane gas 50sccm, nitrogen gas 70sccm, and oxygen gas 5sccm are introduced.

[0063] The process of depositing Si3N4 film layer in step S25 is as follows: preparation is carried out by adopting RF ion source assisted deposition process, silane and nitrogen are ionized under the screen grid electric field of RF ion source and then accelerated to be deposited on glass substrate through accelerating electrode electric field to obtain Si3N4 film layer, wherein the screen grid voltage is 1000V, the screen grid current is 800mA, the accelerating electrode voltage is 800V, and silane gas 50sccm and nitrogen gas 70sccm are introduced.

[0064] The process of depositing the SiO2 film layer in step S26 is as follows: placing the crystalline SiO2 material in a copper crucible in an evaporation chamber, and then using an electron gun to excite an electron beam current to heat the material in the crucible, so that the crystalline SiO2 material is evaporated and deposited on a glass substrate by heat, wherein the evaporation current of the electron gun is 100mA and the evaporation rate is 2.5A / s; and a radio frequency ion source is used to assist deposition during the deposition process, wherein: the screen grid voltage is 1000V, the screen grid current is 800mA, the accelerating electrode voltage is 800V, and 30sccm of oxygen and 5sccm of argon are introduced.

[0065] The film layers in the anti-reflection and anti-transmission layer are respectively SINO film layer 65nm, Si3N4 film layer 134nm, SiO2 film layer 10nm, Si3N4 film layer 140nm, and SiO2 film layer 81nm.

[0066] The process of plasma etching in step S3 is as follows: under the conditions of RF ion source screen grid voltage of 1000V, screen grid current of 800mA, and accelerating electrode voltage of 800V, sputtering gas, reaction gas, sputtering gas oxygen, reaction gas carbon tetrafluoride, wherein the oxygen flow rate is 50sccm, the carbon tetrafluoride flow rate is 5sccm, the cover plate is plasma etched at a rotation speed of 35r / min, and the plasma etching time is 10min.

[0067] The preparation process of the antifouling film layer in step S4 is as follows: the AF drug prepared with a fluorocarbon solvent for the antifouling material is placed in advance in a molybdenum boat for drug evaporation in the evaporation coating chamber, and the antifouling material is evaporated onto the surface of the anti-reflection and anti-transmission layer treated in step 3 at an evaporation current of 90 mA, wherein the rotation speed of the umbrella frame loading the cover plate is 20 r / min, the film thickness of the antifouling layer is controlled by a film thickness meter, and the antifouling material is an AF drug solution containing a fluorine-containing silane polymer.

[0068] Five cover plates prepared in Example 1 were randomly selected for testing, and the measured hardness and transmittance parameters of the cover plates are shown in Table 1.

[0069] Table 1 Performance parameters of the cover plate obtained in Example 1

[0070]

[0071] Example 2

[0072] like Figure 3 As shown, the anti-reflection and anti-transmission layer is an eight-layer film structure, including a medium refractive index film layer, four low refractive index film layers and three high refractive index film layers, and the high refractive index film layers and the low refractive index film layers are arranged alternately, from the direction close to the glass substrate to the direction away from the glass substrate, they are 15-25nm SiON film layer 2-1, 25-30nm SiO2 film layer 2-3, 110-120nm Si3N4 film layer 2-2, 8-12nm SiO2 film layer 2-3, 35-45nm Si3N4 film layer 2-2, 65-75nm SiO2 film layer 2-3, 10-20nm Si3N4 film layer 2-2, and 15-25nm SiO2 film layer 2-3. In specific implementation, during the evaporation coating process, the thickness of each film layer is controlled by a film thickness meter.

[0073] The preparation method in this example is the same as that in Example 1, except that the number of anti-reflection and anti-transmittance layers and the arrangement and thickness of each film layer are different. Specifically, the film layers obtained are SiON film layer 20nm, SiO2 film layer 28nm, Si3N4 film layer 1 16nm, SiO2 film layer 11nm, Si3N4 film layer 39nm, SiO2 film layer 70nm, Si3N4 film layer 15nm, and SiO2 film layer 20nm.

[0074] Table 2 Performance parameters of the cover plate obtained in Example 2

[0075]

[0076] Five cover plates prepared in Example 2 were randomly selected for testing, and the measured hardness and transmittance parameters of the cover plates are shown in Table 2.

[0077] Friction test: Japanese BONSTAR steel wool NO.0000# was used, fixed to the friction tester with a weight of 1000g, a friction area of ​​10mm*10mm, a friction stroke of 40mm, a reciprocating frequency of 60cycles / min, and a horizontal friction of 2000cycles. The friction results are shown in Table 3.

[0078] Table 3 Friction properties of cover plates obtained in Example 1 and Example 2

[0079] Example 1 Example 2 1# No obvious scratches OK No obvious scratches OK 2# No obvious scratches OK No obvious scratches OK 3# No obvious scratches OK No obvious scratches OK| 4# No obvious scratches OK No obvious scratches OK| 5# No obvious scratches OK No obvious scratches OK

[0080] In summary, the pencil hardness of the cover plate can reach 9H, the nanoindentation hardness is 11-15GPa, the Mohs hardness can reach above level six, the roughness Ra of the cover plate is 1-3nm, the sharpness Psk of the microstructure of the cover plate surface is <0, the microscopic surface morphology is relatively rounded, the dynamic friction coefficient is <0.05, and it has high hardness and super wear-resistant effect. The cover plate has a visible light transmittance of more than 94% at 400-700nm, and has excellent anti-reflection and anti-transmittance effects, and is also hydrophobic, anti-fouling and easy to clean.

[0081] The above examples are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent transformation or modification made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing an anti-reflection and anti-reflection cover plate, characterized in that: The following steps are involved: S1. Cleaning and activating the surface of the glass substrate; S2, placing the glass substrate processed in step S1 in an evaporation coating chamber, plasma cleaning the glass substrate under vacuum conditions, and then depositing an anti-reflection and anti-reflection layer on the surface of the glass substrate, wherein the anti-reflection and anti-reflection film layer includes a medium refractive index film layer, a plurality of low refractive index film layers and a plurality of high refractive index film layers, wherein the medium refractive index film layer is attached to the surface of the glass substrate, the plurality of low refractive index film layers and the plurality of high refractive index film layers are alternately arranged on the medium refractive index film layer and the film layer located on the outside is the low refractive index film layer, the medium refractive index film layer is a SION film layer, the low refractive index film layer is a SiO2 film layer, and the high refractive index film layer is a Si3N4 film layer; S3, plasma etching the surface of the anti-reflection and anti-reflection layer of the glass cover plate obtained in step S2 in an evaporation coating vacuum chamber; S4, depositing an anti-fouling layer by evaporation deposition on the surface of the anti-reflection and anti-transmission layer treated in step S3 in an evaporation coating vacuum chamber.

2. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S2, an evaporation coating machine with a radio frequency ion source is used to deposit the anti-reflection and anti-transmission layer.

3. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: The deposition of the anti-reflection and anti-reflection layer in step S2 includes the following steps: S21, fixing the glass substrate processed in step S1 on an umbrella-shaped rotating rack of an evaporation coating machine and closing the coating chamber of the evaporation coating machine; S22, the coating chamber of the evaporation coating machine is evacuated, and the rotary vane pump, the roots pump, and the diffusion pump are turned on in sequence, and the heating is turned on during the evacuation process, and the heating temperature is 50-70° C.; S23, plasma cleaning, starting the radio frequency ion source when the vacuum degree is 0.002-0.003Pa, the screen grid voltage of the radio frequency ion source plasma cleaning is 700-900V, the screen grid current is 700-900mA, the accelerating electrode voltage is 600-900V, and the oxygen plasma cleaning is performed under the conditions of argon flux 0-10sccm, oxygen flux 30-50sccm, and umbrella frame rotation speed 10-20r / min; S24, depositing a SiNO film layer, using a radio frequency ion source assisted deposition process to prepare the SiON film layer, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a SiON film layer, wherein nitrogen is 30-70 sccm, oxygen is 2-10 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200 V, the screen grid current is 800-1000 mA, and the accelerating electrode voltage is 600-800 V for deposition; S25, depositing a Si3N4 film layer, using a radio frequency ion source assisted deposition process to prepare the Si3N4 film layer, wherein silane and nitrogen are ionized under the screen grid electric field of the radio frequency ion source and then accelerated and deposited on a glass substrate through an accelerating electrode electric field to obtain a Si3N4 film layer, wherein nitrogen is 30-100 sccm, silane is 10-100 sccm, the screen grid voltage is 800-1200V, the screen grid current is 800-1000mA, and the accelerating electrode voltage is 600-800V for deposition; S26, depositing a SiO2 film layer, placing a crystalline SiO2 material in a copper crucible of an evaporation chamber, and then using an electron gun to excite an electron beam current to heat the material in the crucible, so that the crystalline SiO2 material is heated and evaporated and deposited on a glass substrate, wherein the electron gun current is 100-150 mA, the deposition rate is 1-4 A / s, and the deposition process adopts a radio frequency ion source to assist deposition, with 10-30 sccm of oxygen, 0-10 sccm of argon, a screen grid voltage of 800-1200 V, a screen grid current of 800-1000 mA, and an accelerating electrode voltage of 600-800 V for deposition; S27, repeating step S25 and step S26 to deposit alternating low refractive index film layers and high refractive index film layers.

4. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S2, the refractive index of the low refractive index film layer is 1.46-1.50, the refractive index of the medium refractive index film layer is 1.7-1.8, and the refractive index of the high refractive index film layer is 1.95-2.

05.

5. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S2, the anti-reflection and anti-transmission layer has a five-layer film structure, which is SiON film layer 60-70nm, Si3N4 film layer 135-140nm, SiO2 film layer 8-12nm, Si3N4 film layer 135-145nm, and SiO2 film layer 80-90nm from the direction close to the glass substrate to the direction away from the glass substrate.

6. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S2, the anti-reflection and anti-transmission layer has an eight-layer film structure, which is SiON film layer 15-25nm, SiO2 film layer 25-30nm, Si3N4 film layer 110-120nm, SiO2 film layer 8-12nm, Si3N4 film layer 35-45nm, SiO2 film layer 65-75nm, Si3N4 film layer 10-20nm, and SiO2 film layer 15-25nm, in order from close to the glass substrate to away from the glass substrate.

7. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S3, CF4 gas plasma etching is adopted, and the parameters are: RF ion source screen grid voltage 800-1200V, screen grid current 700-900mA, accelerating electrode voltage 700-900V, carbon tetrafluoride 2-10sccm, oxygen 40-60sccm, etching time 5-15min.

8. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 1, characterized in that: In step S4, the antifouling material is placed in advance in a molybdenum boat for evaporation of the drug alkane in the evaporation coating chamber, and the antifouling material is evaporated onto the surface of the antireflection and anti-reflection layer obtained in step S3 at an evaporation current of 90 mA.

9. The method for preparing the anti-reflection and anti-reflection cover plate according to claim 8, characterized in that: In step S4, the antifouling material is AF liquid containing fluorine-containing silane polymer.

10. An anti-reflection and anti-reflection cover plate, characterized in that: It is made according to the method for preparing the anti-reflection and anti-reflection cover plate according to any one of claims 1 to 9.

Images