Processing method for improving wear resistance of AF film
By preparing the low-roughness coating surface, SiO2 layer and conductive AF film on the substrate, the problem of insufficient wear resistance of the existing AF film is solved, significantly improving the wear resistance and service life of the AF film, and improving the user experience and brand image.
Patent Information
- Application Number
- CN202411825906.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-12
- Publication Date
- 2025-04-11
AI Technical Summary
The wear resistance of existing AF films is insufficient, especially when facing physical wear in daily use, which leads to premature failure in actual applications and affects the service life and user experience of the product.
By preparing a substrate with a roughness of ≤0.8 nm, a SiO2 layer is prepared on the surface of the substrate under a vacuum environment, and an AF film is prepared on the surface of the SiO2 layer. The AF drug solution needs to be conductive to release static electricity generated during the friction process.
It significantly improves the wear resistance of AF film, extends the service life of the product, reduces maintenance costs, and improves user satisfaction and brand image.
Smart Images
Figure CN119800283A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of glass processing, and in particular to a processing method for improving the wear resistance of an AF film. Background Art
[0002] In the field of modern electronic devices and smart homes, such as mobile phones, smart wearable devices, car systems and smart home products, AF (Anti-Fouling) films are widely used on the surfaces of various structural parts to provide anti-fouling, anti-fingerprint and easy-to-clean functions. However, there is a significant problem with the AF films in the prior art: their durability is insufficient, especially when facing physical wear and tear in daily use.
[0003] Specifically, most AF films on the market currently have a wear resistance of less than 10,000 times after being tested with erasers and steel wool. This performance index is far from meeting the needs of actual applications, especially when users frequently touch it or the environment is relatively harsh, the AF film is prone to premature failure, which in turn affects the overall service life of the product and user experience.
[0004] As consumers’ requirements for product quality and durability continue to increase, the problem of insufficient durability of existing AF films has become more prominent, which not only increases the maintenance cost of the product, but may also reduce user satisfaction and affect the brand image.
[0005] Therefore, developing a technical solution that can significantly improve the wear resistance of AF film so that it can maintain a good anti-fouling effect for a longer period of time has become a key issue that needs to be urgently addressed in this field. Summary of the invention
[0006] The technical problem to be solved by the present invention is: in view of the above-mentioned defects of the prior art, a processing method for improving the wear resistance of the AF film is provided, so as to increase the wear times of the AF film and enable it to maintain a good anti-fouling effect for a longer period of time.
[0007] To achieve the above object, the present invention provides a processing method for improving the wear resistance of an AF film, which is used to prepare an AF film with high wear resistance on a substrate. The processing method comprises the following steps:
[0008] Step S1, preparing a substrate with a surface to be coated having a roughness of ≤0.8 nm;
[0009] Step S2, in a vacuum environment, preparing a SiO2 layer on the surface to be coated on the substrate, wherein the thickness of the SiO2 layer is 20 nm to 80 nm;
[0010] Step S3, after the SiO2 layer is prepared, an AF film is prepared on the surface of the SiO2 layer under a vacuum environment, and the AF liquid used to prepare the AF film has conductivity.
[0011] Preferably, the specific method of step S1 is:
[0012] The surface to be coated of the substrate is polished to have a surface roughness of ≤0.8 nm.
[0013] Preferably, in step S2, the method for preparing the SiO2 layer includes vacuum sputtering and evaporation.
[0014] Preferably, in step S3, the method for preparing the AF film includes spraying and evaporation coating.
[0015] Preferably, in step S3, the AF solution contains conductive groups, and the conductive properties of the AF solution are evaluated by measuring the electrical signal strength of the AF solution tested by TEM.
[0016] Preferably, the electrical signal strength of the AF solution is ≥10.
[0017] The present invention has the following beneficial effects: the present invention first prepares a substrate with a roughness of ≤0.8nm on the surface to be coated, and a lower roughness is conducive to improving the adhesion of the film layer; then, a SiO2 layer with a certain thickness is prepared on the surface to be coated of the substrate in a vacuum environment, and the SiO2 layer provides sufficient SI-O unsaturated chemical bonds to combine with the AF liquid, and makes the film layer have a certain toughness; finally, an AF film is prepared on the surface of the SiO2 layer in a vacuum environment, and the AF liquid for preparing the AF film needs to have a certain conductivity to release the static electricity generated during the friction process, so that the AF film layer is more stable. The AF film prepared by the method of the present invention performs far better than the existing technology in the eraser and steel wool friction test, and the number of frictions is significantly increased, thereby greatly improving the durability of the AF film, extending the overall service life of the product, reducing maintenance costs, and improving user satisfaction and brand image. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:
[0019] Figure 1 A schematic diagram of the steps of a processing method for improving the wear resistance of an AF film provided in an embodiment of the present invention. DETAILED DESCRIPTION
[0020] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0021] The general idea of the present invention is: first, prepare a substrate with a roughness of ≤0.8nm on the surface to be coated, and a lower roughness is conducive to improving the adhesion of the film layer; then, in a vacuum environment, prepare a SiO2 layer with a certain thickness on the surface to be coated of the substrate, and the SiO2 layer provides sufficient SI-O unsaturated chemical bonds to combine with the AF solution, and makes the film layer have a certain toughness; finally, prepare an AF film on the surface of the SiO2 layer in a vacuum environment, and the AF solution for preparing the AF film needs to have a certain conductivity to release the static electricity generated during the friction process, so that the AF film layer is more stable.
[0022] The embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings of the specification. It should be understood that the embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.
[0023] The present invention is suitable for preparing an AF film on the surface of a substrate such as glass, so as to improve the wear resistance of the AF film.
[0024] like Figure 1 As shown, an embodiment of the present invention provides a processing method for improving the wear resistance of an AF film, which is used to prepare an AF film with high wear resistance on a substrate. The processing method includes the following steps:
[0025] Step S1, preparing a substrate with a surface to be coated having a roughness of ≤0.8 nm.
[0026] In some embodiments of the present invention, the substrate is glass.
[0027] In some other embodiments of the present invention, the substrate is coated glass. Because the AF film is usually always located on the outermost layer of the substrate, the substrate may be coated with other functional film layers or decorative film layers before the AF film is coated. The solution of the present invention is also applicable to glass coated with functional film layers or decorative film layers.
[0028] In the embodiment of the present invention, the specific method of step S1 is: polishing the surface of the substrate to be coated to make its surface roughness ≤ 0.8 nm. Specifically, a chemical mechanical polishing method or a laser processing polishing method can be used.
[0029] Surface roughness refers to the degree of error in the microscopic geometric shape of the material surface, usually expressed as average roughness (Ra). It reflects the height difference between peaks and valleys on the material surface. Controlling the surface roughness of the substrate within the range of less than 0.8nm ensures the extreme smoothness of the substrate surface, which can enhance the adhesion between the substrate surface to be coated and the film layer, reduce stress concentration, reduce defect density, make the film layer thickness more uniform, and extend the service life of the film layer.
[0030] Step S2, in a vacuum environment, preparing a SiO2 layer on the surface to be coated of the substrate, wherein the thickness of the SiO2 layer is 20 nm to 80 nm.
[0031] In the embodiment of the present invention, in the step S2, the method for preparing the SiO2 layer includes vacuum sputtering and evaporation.
[0032] In an embodiment of the present invention, the thickness of the SiO2 layer is 20nm to 80nm. After the SiO2 layer is prepared on the surface to be coated on the substrate, the SiO2 layer provides a sufficient amount of Si-O unsaturated chemical bonds to combine with the AF solution, so that the AF film and the SiO2 layer are more firmly combined. The SiO2 layer needs to have a certain thickness to provide sufficient toughness to resist mechanical damage and maintain the flatness of the surface of the SiO2 layer. If the SiO2 layer is too thin or too thick, its surface flatness is not ideal. In practical applications, the surface flatness is controlled by controlling the thickness of the SiO2 layer.
[0033] Step S3, after the SiO2 layer is prepared, an AF film is prepared on the surface of the SiO2 layer under a vacuum environment, and the AF liquid used to prepare the AF film has conductivity.
[0034] In the embodiment of the present invention, the preparation of the SiO2 layer and the preparation of the AF film are carried out in the same machine, and the machine is in a vacuum environment. After the preparation of the SiO2 layer, the substrate is not taken out, and the AF film is directly prepared in the machine. Specifically, the machine can be an electroplating machine with multiple chambers. After the Si-O unsaturated chemical bonds on the surface of the SiO2 layer absorb impurities in the air, the Si-O unsaturated chemical bonds will be partially or completely converted into saturated chemical bonds, weakening the binding ability of the SiO2 layer and the AF solution.
[0035] In the embodiment of the present invention, in the step S3, the method for preparing the AF film includes spraying and evaporation coating.
[0036] The thickness of the SiO2 layer is relatively thick, providing a good insulation effect. When the AF film is rubbed, the static electricity generated cannot be conducted out through the SiO2 layer, resulting in the easy peeling off of the AF film. Therefore, in the embodiments of the present invention, the AF liquid medicine needs to have weak conductivity to effectively release the static electricity generated during the rubbing process, enhance the stability of the AF film layer, and reduce the risk of film layer peeling or failure caused by static electricity accumulation. In the embodiments of the present invention, the AF liquid medicine contains a conductive group, and the conductive group makes it have weak conductivity. Since the content of the conductive group only needs to be able to release static electricity and its content is low, it is not easy to measure through conductivity testing and concentration testing. In the embodiments of the present invention, the conductivity performance of the AF liquid medicine is evaluated by the electrical signal intensity of the AF liquid medicine measured by TEM (Transmission Electron Microscopy). In order to make the number of rubs of the AF film with rubber and steel wool both greater than 10,000, the electrical signal intensity of the AF liquid medicine ≥ 10.
[0037] Table 1 below is a comparison table of experimental data for different embodiments of the present invention. Each embodiment has different combinations of surface roughness of the surface to be coated, thickness of the SiO2 layer, and electrical signal intensity values of the AF liquid medicine. Rubber rubbing tests and steel wool rubbing tests are carried out for each group of embodiments. The number of rubs in Table 1 is the minimum value of the number of rubs obtained from the rubber rubbing test and the steel wool rubbing test. It can be seen from Table 1 that under the condition that the surface roughness and the thickness of the SiO2 layer are the same, the stronger the electrical signal intensity of the AF liquid medicine, the greater the number of rubs. When the thickness of the SiO2 layer and the electrical signal intensity of the AF liquid medicine are the same, the lower the surface roughness, the greater the number of rubs. When the surface roughness and the electrical signal intensity of the AF liquid medicine are the same, the number of rubs of the AF film when the thickness of the SiO2 layer is 12 nm < the number of rubs of the AF film when the thickness of the SiO2 layer is 40 nm < the number of rubs of the AF film when the thickness of the SiO2 layer is 25 nm. This is because when the thickness of the SiO2 layer is too thin or too thick, its surface roughness will deteriorate, thereby affecting the adhesion of the AF liquid medicine on the surface of the SiO2 layer. It can be seen from Table 1 that the surface roughness of the surface to be coated, the thickness of the SiO2 layer, and the electrical signal intensity of the AF liquid medicine all have an important impact on the number of rubs of the AF film. In the embodiments of the present invention, when the surface roughness is 0.9 nm, the maximum number of rubs is 13,000. When the surface roughness is 0.8 nm, the maximum number of rubs is 15,000. When the surface roughness is 0.6 nm, the maximum number of rubs reaches 22,000. The above number of rubs far exceeds the prior art. Therefore, compared with the prior art, the AF film prepared by the solution of the present invention has better wear resistance.
[0038] Table 1 Comparison Table of Experimental Data for Different Embodiments
[0039]
[0040]
[0041] The present invention has the following beneficial effects: the present invention first prepares a substrate with a roughness of ≤0.8nm on the surface to be coated, and a lower roughness is conducive to improving the adhesion of the film layer; then, a SiO2 layer with a certain thickness is prepared on the surface to be coated of the substrate in a vacuum environment, and the SiO2 layer provides sufficient SI-O unsaturated chemical bonds to combine with the AF liquid, and makes the film layer have a certain toughness; finally, an AF film is prepared on the surface of the SiO2 layer in a vacuum environment, and the AF liquid for preparing the AF film needs to have a certain conductivity to release the static electricity generated during the friction process, so that the AF film layer is more stable. The AF film prepared by the method of the present invention performs far better than the existing technology in the eraser and steel wool friction test, and the number of frictions is significantly increased, thereby greatly improving the durability of the AF film, extending the overall service life of the product, reducing maintenance costs, and improving user satisfaction and brand image.
[0042] The above are only specific implementations of the present invention, which cannot be used to limit the scope of the present invention. Equivalent changes made by ordinary technicians in this technical field based on this creation, as well as changes known to technicians in this field, should still fall within the scope of the present invention.
Claims
1. A processing method for improving the wear resistance of an AF film, used for preparing an AF film with high wear resistance on a substrate, characterized in that: The processing method comprises the following steps: Step S1, preparing a substrate with a surface to be coated having a roughness of ≤0.8 nm; Step S2, in a vacuum environment, preparing a SiO2 layer on the surface to be coated on the substrate, wherein the thickness of the SiO2 layer is 20 nm to 80 nm; Step S3, after the SiO2 layer is prepared, an AF film is prepared on the surface of the SiO2 layer under a vacuum environment, and the AF liquid used to prepare the AF film has conductivity.
2. The processing method for improving the wear resistance of the AF film according to claim 1, characterized in that: The specific method of step S1 is: The surface to be coated of the substrate is polished to have a surface roughness of ≤0.8 nm.
3. The processing method for improving the wear resistance of the AF film according to claim 1, characterized in that: In the step S2, the method for preparing the SiO2 layer includes vacuum sputtering and evaporation.
4. The processing method for improving the wear resistance of the AF film according to claim 1, characterized in that: In the step S3, the method for preparing the AF film includes spraying and evaporation coating.
5. The processing method for improving the wear resistance of the AF film according to claim 1, characterized in that: In step S3, the AF solution contains conductive groups, and the electrical signal strength of the AF solution tested by TEM is used to evaluate its conductive properties.
6. The processing method for improving the wear resistance of the AF film according to claim 5, characterized in that: The electrical signal strength of the AF solution is ≥10.