Preparation method of ultraviolet shielding hydrophobic transparent film

The ZnO layer is deposited at room temperature on the substrate through radio frequency magnetron sputtering technology, which solves the problems of insufficient weather resistance and insufficient UVA protection of existing ultraviolet shielding materials, and achieves efficient ultraviolet shielding and good visible light transmission performance.

CN119800311APending Publication Date: 2025-04-11HEFEI UNIV OF TECH
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Patent Information

Application Number
CN202510036801.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-09
Publication Date
2025-04-11

AI Technical Summary

Technical Problem

The existing ultraviolet shielding materials have problems such as insufficient long-term weather resistance, decreased visible light transmittance, and insufficient UVA protection from 320 to 400 nm.

Method used

The ZnO layer is deposited at room temperature on the substrate by radio frequency magnetron sputtering technology to form an ultraviolet shielding film.

Benefits of technology

It realizes efficient ultraviolet shielding, with a wavelength of 375nm ultraviolet transmittance <2%, and has good visible light transmittance performance, with good robustness, weather resistance and hydrophobicity.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to the field of ultraviolet shielding materials, and provides a preparation method of an ultraviolet shielding hydrophobic transparent film, which comprises the following steps: (1) taking a substrate, and ultrasonically cleaning with acetone, absolute ethyl alcohol and deionized water respectively; and (2) taking ZnO as a target material, sputtering a ZnO layer on the substrate at room temperature by adopting a radio frequency magnetron sputtering instrument, and strictly controlling sputtering air pressure, sputtering power and sputtering time. The preparation method has the advantages that a simple one-step single-target magnetron sputtering deposition technology is adopted, and single-layer ZnO is deposited at room temperature; the prepared film has high ultraviolet shielding performance, the transmittance of ultraviolet rays with the wavelength of 375 nm is smaller than 2%, and the film has good visible light transmittance performance; and meanwhile, the coating has better firmness and weather resistance, has self-cleaning performance combined with a surface hydrophobic function, and is wide in application scene.
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Description

Technical Field

[0001] The invention relates to the field of ultraviolet shielding materials, in particular to a method for preparing an ultraviolet shielding hydrophobic transparent film. Background Art

[0002] With the development of modern industrialization, the ozone layer that absorbs 99% of ultraviolet rays in the atmosphere has been destroyed. Excessive ultraviolet radiation will affect the performance of some materials and human health. Therefore, ultraviolet shielding materials have become a research hotspot in recent years.

[0003] Invention patent CN118046639A discloses a sun-proof laminated glass for vehicle windows and a preparation method thereof, which uses a laminated glass plus a surface magnetron sputtering deposition method for multi-layer thin films to achieve sun protection for vehicle windows. However, the ultraviolet shielding effect used is mostly derived from the reaction components of organic matter, which has the problems of poor light and heat stability and insufficient long-term stability. In addition, the decomposition products of the organic ultraviolet absorption components are toxic to a certain extent, and the preparation process and structure of the entire system are complicated.

[0004] Invention patent CN1412258A discloses a nano-UV-resistant acrylic coating, which is obtained by mixing titanium dioxide or zinc oxide nanopowder with a polymer dispersant to obtain a nano-dispersion, grinding and dispersing to obtain a nano-oxide slurry, and then adding the mixture into a polyacrylic resin to fully disperse the mixture to obtain an UV-resistant coating. However, the nano-powder grinding slurry used is difficult to restore the primary particle size dispersion level in principle, that is, inorganic nanoparticles are easy to agglomerate together, so that it can achieve UV shielding while causing a decrease in visible light transparency, especially when the nano-oxide content is selected too much, the agglomeration effect causes a more obvious decrease in light transmittance.

[0005] Invention patent CN103436111A discloses a method for preparing a water-based UV shielding coating based on ZnO quantum dots, wherein ethyl orthosilicate and deionized water are added to a ZnO QDs ethanol dispersion, and the mixture is stirred and reacted for 6 hours to obtain SiO 2 The coated ZnO QDs effectively inhibited the photocatalytic activity of ZnO QDs. However, the coating can only shield ultraviolet light below 340nm, and is insufficient for protection against UVA (320-400nm). Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a method for preparing a UV-shielding hydrophobic transparent film, which utilizes an inorganic UV-shielding material ZnO and uses a radio frequency magnetron sputtering method to sputter-deposit a UV-shielding film on a substrate at room temperature, thereby avoiding the problems of existing UV-shielding materials such as insufficient long-term weather resistance, decreased visible light transmittance, and insufficient protection against 320-400nm UVA.

[0007] The present invention adopts the following technical solutions to solve the above technical problems:

[0008] A method for preparing a UV shielding hydrophobic transparent film comprises the following steps:

[0009] (1) Cleaning the substrate

[0010] The substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water respectively;

[0011] (2) Sputtered ZnO layer

[0012] Using ZnO as the target material, a ZnO layer is sputtered on the substrate using a radio frequency magnetron sputtering instrument. The operation is as follows:

[0013] ①Start the instrument

[0014] After installing the ZnO target and substrate, close the chamber cover of the magnetron sputtering instrument; turn on the water cooler, the main power supply of the magnetron sputtering instrument, and the mechanical pump; after 30 seconds, open the fore valve, turn on the vacuum gauge, and open the stop valve when the pressure in the sputtering chamber reaches 10Pa; after opening the stop valve, turn on the gas flow meter, turn on the argon gas cylinder, adjust the gas flow meter knob for ventilation for 15 seconds, and then close it to exhaust the original air in the chamber; when the pressure drops to 5Pa, turn on the molecular pump and RF power supply;

[0015] ② Start sputtering

[0016] The pressure dropped to 5×10 -3 When the pressure reaches 0.0457 Pa, close the vent handle and adjust the gas flow meter knob to introduce argon gas to raise the gas pressure to the set value; start the substrate rotation, and adjust the voltage level and RF matcher to start the sputtering chamber and reach the preset sputtering power. Time the sputtering to the set time and end the sputtering.

[0017] ③ Turn off the instrument

[0018] Adjust the RF power supply voltage gear to zero, and turn off the gas cylinder, gas flow meter, substrate rotation, and molecular pump; after the molecular pump speed returns to zero, close the stop valve, vacuum gauge, fore valve, and mechanical pump in sequence; open the vent handle and open the gas valve; after silence, turn off the vent valve, main power supply, and water cooler; open the chamber cover, take out the sample, and remove the target material.

[0019] As one of the preferred embodiments of the present invention, in the step (1), a transparent glass substrate is used.

[0020] As one of the preferred embodiments of the present invention, the transparent glass substrate is ultra-clear rolled patterned glass or a glass slide.

[0021] As one of the preferred embodiments of the present invention, in step (1), the substrate is ultrasonically cleaned with acetone, anhydrous ethanol and deionized water in sequence for 15 minutes each.

[0022] As one of the preferred embodiments of the present invention, in step (2)①, the ZnO target has a purity of 99.99%, a diameter of 2 inches, a thickness of 3 mm, and is bound with a 1 mm copper backing plate.

[0023] As one of the preferred embodiments of the present invention, in step (2)②, the gas flow meter knob is adjusted to introduce argon gas, and after the gas pressure rises to the set value of 1.3 Pa, the substrate rotation is started.

[0024] As one of the preferred embodiments of the present invention, in step (2)②, the sputtering power is preset to 50 to 150 W, and the duration is set to 20 to 30 minutes.

[0025] As one of the preferred embodiments of the present invention, during the processes ① and ② of step (2), the substrate is at room temperature.

[0026] Design principle:

[0027] Magnetron sputtering deposition coating uses a high-energy particle beam under vacuum to bombard the target surface under the constraints of magnetic and electric fields, knocking out the atomic groups in the target material, so that the atomic groups with a certain energy move to the substrate surface and then deposit into a film. Figure 1 As shown in the figure, under certain vacuum conditions, the electrons are bound by the electric field and the orthogonal magnetic field on the target surface and move in a spiral shape near the target. During the movement, they collide with the Ar in the chamber and ionize to produce Ar. + Compared with the case without magnetic field, the addition of magnetic field changes the trajectory of electrons, which increases the ionization rate of Ar. + Under the action of the electric field, it flies towards the target material at high speed. The orthogonal magnetic field on the surface of the target material bombards the atomic clusters in the target material. The energetic atomic clusters move to the substrate to realize the deposition process.

[0028] According to the different types of electric fields added between the substrate and the target, magnetron sputtering can be divided into DC type and RF type. DC sputtering is to add a DC voltage or current between the target and the substrate, and grow under constant voltage or constant current conditions. The target must be able to conduct electricity, otherwise electrons will accumulate on the surface of the target, making sputtering unable to continue. Therefore, DC sputtering targets are mostly made of metal. RF sputtering directly adds an alternating electric field between the target and the substrate. There is no requirement for the conductive properties of the target, but the sputtering process and parameters must be strictly controlled to obtain high-quality films.

[0029] Accordingly, the present invention is based on radio frequency magnetron sputtering technology, and obtains a high-quality ultraviolet shielding film by adjusting factors such as sputtering gas pressure, sputtering power, and sputtering time.

[0030] The advantages of the present invention compared to the prior art are:

[0031] (1) The present invention adopts a simple one-step single-target magnetron sputtering deposition technology to deposit a single layer of ZnO at room temperature; the obtained film has high ultraviolet shielding performance, a wavelength of 375nm ultraviolet transmittance of less than 2%, and good visible light transmittance; at the same time, it has good robustness, weather resistance, and self-cleaning performance combined with surface hydrophobic function, and has a wide range of application scenarios;

[0032] (2) The magnetron sputtering method of the present invention is mature, the deposition parameters are optimized, the preparation process is simple and fast, and has industrial application prospects;

[0033] (3) The magnetron sputtering process of the present invention is room temperature (without heating the substrate) sputtering deposition; compared with the traditional heating deposition, the room temperature deposition of the present invention, on the one hand, will not cause thermal damage to the heat-sensitive substrate, and has a wider applicability; on the other hand, it is more energy-saving and simple while still being able to obtain high-quality films;

[0034] (4) The present invention adopts single-target magnetron sputtering; compared with multi-target magnetron co-sputtering, the single-target magnetron sputtering of the present invention is not only easy to operate and low in cost, but also has better sputtering stability: since only one target material is used, the magnetic field and sputtering conditions of the single-target system are easier to control and stabilize, reducing the sputtering non-uniformity caused by possible interference from multiple targets; at the same time, cross contamination is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic diagram of the magnetron sputtering equipment of the present invention and its application principle;

[0036] Figure 2 is the result of the ultraviolet shielding rate of the ultraviolet shielding hydrophobic transparent film of the present invention;

[0037] Figure 3 is a UV-Vis graph of the ultraviolet shielding hydrophobic transparent film of the present invention;

[0038] Figure 4 is the XRD diagram of the ultraviolet shielding hydrophobic transparent film of the present invention;

[0039] Figure 5 1 is the water drop contact angle test result of the ultraviolet shielding hydrophobic transparent film of the present invention (in the figure, Figure A is the test result of the film of Example 1; Figure B is the test result of the film of Example 2; Figure C is the test result of the film of Example 3);

[0040] Figure 6 The UV shielding effect of the banknote sample coated with the film of the present invention (in the figure, Figure A is the UV shielding effect of the uncoated sample; Figure B is the UV shielding effect of the coated sample);

[0041] Figure 7The results of the adhesion test of the sample coated with the film of the present invention by a hundred-grid knife scratch and a coarse sandpaper abrasion test (in the figure, Figure A is the adhesion test result of the coated sample by a hundred-grid knife scratch; Figure B is the test result of the coated sample by coarse sandpaper abrasion);

[0042] Figure 8 The comparison results of the ultraviolet shielding rate of the film of Example 2 of the present invention and Comparative Example 1 are shown;

[0043] Fig. 9 This is the XRD pattern of the film of Comparative Example 1. DETAILED DESCRIPTION

[0044] The embodiments of the present invention are described in detail below. The embodiments are implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operation processes are given, but the protection scope of the present invention is not limited to the following embodiments. At the same time, the materials, reagents, equipment and methods used in the following embodiments are conventional materials, reagents, equipment and methods in the art unless otherwise specified, and will not be repeated.

[0045] Example 1

[0046] A UV shielding hydrophobic transparent film of this embodiment is prepared as follows:

[0047] (1) Cleaning the substrate

[0048] Ultra-white rolled patterned glass (substrate) was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water at a power of 360 W for 15 min respectively.

[0049] (2) Sputtered ZnO layer

[0050] Using ZnO (purchased from Zhongnuo New Materials) with a purity of 99.99%, a diameter of 2 inches, a thickness of 3 mm, and a 1 mm copper backing plate as the target material, a ZnO layer was sputtered on the substrate using a radio frequency magnetron sputtering instrument. The operation is as follows:

[0051] ①Start the instrument

[0052] After installing the ZnO target and substrate, close the chamber cover of the magnetron sputtering instrument; turn on the water cooler, the main power supply of the magnetron sputtering instrument, and the mechanical pump; after 30 seconds, open the front valve, turn on the vacuum gauge, and open the stop valve when the air pressure in the sputtering chamber reaches 10Pa; after opening the stop valve, turn on the gas flow meter and the argon gas cylinder, adjust the gas flow meter knob for ventilation for 15 seconds, and then close it to exhaust the original air in the chamber; when the air pressure drops to 5Pa, turn on the molecular pump and the RF power supply (do not heat the substrate, just room temperature).

[0053] ② Start sputtering

[0054] The pressure dropped to 5×10 -3When the pressure reaches 400 Pa, close the vent handle and adjust the gas flowmeter knob to introduce argon to raise the sputtering pressure to 1.3 Pa. Start the substrate rotation, and adjust the voltage level and RF matcher to start the sputtering chamber and reach the preset sputtering power of 50 W. Time the sputtering to the set time of 30 minutes to end the sputtering.

[0055] ③ Turn off the instrument

[0056] Adjust the RF power supply voltage gear to zero, and turn off the gas cylinder, gas flow meter, substrate rotation, and molecular pump; after the molecular pump speed returns to zero, close the stop valve, vacuum gauge, fore valve, and mechanical pump in sequence; open the vent handle and open the gas valve; after silence, turn off the vent valve, main power supply, and water cooler; open the chamber cover, take out the sample, and remove the target material.

[0057] Example 2

[0058] The preparation method of the ultraviolet shielding hydrophobic transparent film of this embodiment is basically the same as that of Embodiment 1, with the main difference being that in the step of sputtering the ZnO layer, the sputtering power is 100 W and the sputtering time is 30 min.

[0059] Example 3

[0060] The preparation method of the ultraviolet shielding hydrophobic transparent film of this embodiment is basically the same as that of Embodiment 1, with the main difference being that in the step of sputtering the ZnO layer, the sputtering power is 150 W and the sputtering time is 30 min.

[0061] Example 4

[0062] The preparation method of the ultraviolet shielding hydrophobic transparent film of this embodiment is basically the same as that of embodiment 2, the main difference being that:

[0063] (1) Select a glass slide as the substrate;

[0064] (2) In the ZnO layer sputtering step, the sputtering power is 50 W and the time is counted to the set time of 25 minutes.

[0065] Example 5

[0066] The preparation method of the ultraviolet shielding hydrophobic transparent film of this embodiment is basically the same as that of Example 2, except that: in the step of sputtering the ZnO layer, the sputtering power is 150W, and the time is counted to the set time of 20min.

[0067] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, with the main difference being that in the step of sputtering the ZnO layer, the substrate is heated to a substrate temperature of 250° C. (a common temperature in the art).

[0068] Comparative Example 2

[0069] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, with the main difference being that in the step of sputtering the ZnO layer, the sputtering gas pressure is selected to be 0.5 Pa.

[0070] Comparative Example 3

[0071] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, the main difference being that in the step of sputtering the ZnO layer, the sputtering gas pressure is selected to be 2.0 Pa.

[0072] Comparative Example 4

[0073] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, with the main difference being that a DC sputtering scheme is adopted, pure Zn metal target material is sputtered, and the Zn film is then subjected to high-temperature thermal oxidation treatment to obtain a ZnO film.

[0074] Comparative Example 5

[0075] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, with the main difference being that the preset sputtering power is 30W.

[0076] Comparative Example 6

[0077] The preparation method of a UV shielding hydrophobic transparent film in this comparative example is basically the same as that of Example 2, with the main difference being that the preset sputtering power is 200W.

[0078] Experimental Example 1

[0079] This experimental example is used to verify the application performance of the ultraviolet shielding hydrophobic transparent film of the present invention.

[0080] 1. Experimental Methods

[0081] 1. Use an ultraviolet spectrophotometer to measure and calculate the ultraviolet shielding rate of the ultraviolet shielding hydrophobic transparent film of the present invention (taking the films of Examples 1 to 3 as examples) (the calculation of the ultraviolet shielding rate refers to GB_T 2680-2021).

[0082] 2. Detect and obtain the UV-Vis graph and XRD graph of the ultraviolet shielding hydrophobic transparent film of the present invention (taking the films of Examples 1 to 3 as examples).

[0083] 3. Observe and record the water drop contact angle test results of the ultraviolet shielding hydrophobic transparent film of the present invention (taking the films of Examples 1 to 3 as examples).

[0084] 4. The ultraviolet shielding effect of the banknote samples coated with the ultraviolet shielding hydrophobic transparent film of the present invention was tested, and compared with the uncoated samples.

[0085] 5. The samples coated with the ultraviolet shielding hydrophobic transparent film of the present invention were subjected to a hundred-grid knife scratch adhesion test and a coarse sandpaper wear test.

[0086] 2. Experimental Results

[0087] The results are as follows Figures 2 to 7 shown.

[0088] From the above results, we can know that: (1) Figure 2 As shown in FIG. 1 , the films of the present invention with optimized parameters all exhibit high UV shielding, with the highest reaching more than 99%; (2) Figure 3 As shown, the present invention achieves low ultraviolet transmittance while also ensuring high visible light and near-infrared transmittance. The transmittance curves all show wavy fluctuations, which are due to the interference effect of the film. The appearance of interference fringes indicates that the film has good crystallinity. The density of the fringes can be used to assist in analyzing the film thickness based on the thin film interference principle; (3) Figure 4 As shown in FIG. 4 , the XRD of the film of the present invention shows that the ZnO film exhibits a (002) crystal plane preferred orientation, that is, a c-axis preferred orientation. This is because when deposited at room temperature, the ZnO crystal grows toward the (002) crystal plane with lower surface energy. The optimized deposition parameters achieve the deposition of a film with better crystallinity at room temperature, and the UV shielding effect is significant; (4) Figure 5 As shown in FIG. 5 , the water contact angle of the film of the present invention exceeds 90°, showing hydrophobicity; (5) Figure 6 As shown in FIG. 6 , the actual ultraviolet shielding effect of the transparent ultraviolet shielding film of the present invention can significantly reduce the ultraviolet fluorescence reaction on the banknote; (6) Figure 7 As shown in the figure, the film after the adhesion test of the hundred-grid knife scratch test did not peel off, and the film surface abraded in all directions by sandpaper had slight scratches, indicating that the film has a strong adhesion to the substrate.

[0089] Experimental Example 2

[0090] This experimental example is used to verify the important influencing parameters of the performance of the ultraviolet shielding hydrophobic transparent film of the present invention.

[0091] 1. Substrate heating

[0092] The ultraviolet shielding rates of the films of Example 2 and Comparative Example 1 were tested respectively, and XRD patterns were obtained for comparison. The ultraviolet shielding rate results are shown in FIG. Figure 8 , XRD results are as follows Fig. 9 shown.

[0093] The results show that compared with traditional "substrate heating", the present invention can still maintain a high film quality, or even better, without the need for heating; but at the same time, since the method of depositing a single layer of ZnO at room temperature of the present invention will not cause thermal damage to the heat-sensitive substrate, the present invention is more widely available and is more energy-efficient and simple.

[0094] 2. Sputtering pressure

[0095] The ultraviolet shielding rates of the films of Example 2 of the present invention and Comparative Examples 2 and 3 were tested and compared. The results showed that when sputtering was performed at a pressure of 0.5 Pa, no obvious coating was observed on the substrate surface, and the film layer was relatively thin; when sputtering was performed at a pressure of 2.0 Pa, no obvious coating was observed on the substrate surface.

[0096] The above results show that "sputtering gas pressure" is an important parameter affecting the performance of the present invention, and through experiments, 1.3 Pa is the optimal value.

[0097] 3. Sputtering Solution

[0098] The corresponding thin film was prepared according to the DC sputtering scheme of Comparative Example 4, and the results were compared with those of Example 2. The results showed that the comparative example 4 scheme was slightly lacking in transparency due to the influence of ZnO thermal oxidation treatment on the quality of the final thin film.

[0099] The above results show that the optimization and selection of the sputtering scheme has an important influence on the quality of the film; based on the conditions of the present invention, the radio frequency magnetron sputtering scheme is better.

[0100] 4. Sputtering power

[0101] The corresponding thin films were prepared according to the conditions of Comparative Examples 5 and 6, and compared with the results of Examples 1 to 3. It was found that under the sputtering power of 30W, no obvious coating was observed on the substrate surface, and the film layer was relatively thin; while under the power of 200W, the coating appearance was close to that of Examples 1 to 3 of the present invention, but this power was close to the upper limit of the instrument power, so it was not preferred.

[0102] The above results show that "sputtering power" is an important parameter affecting the performance of the present invention, and through experiments, 50 to 150 W is the optimal value.

[0103] Based on the results of the above experimental examples, it can be seen that the present invention adopts a simple one-step single-target magnetron sputtering deposition technology to deposit a single layer of ZnO at room temperature; the obtained film has high UV shielding performance, with a UV transmittance of less than 2% at a wavelength of 375nm, and also has good visible light transmittance; at the same time, it has good durability, weather resistance, and self-cleaning performance combined with surface hydrophobic function, and has a wide range of application scenarios.

[0104] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a UV shielding hydrophobic transparent film, characterized in that: The steps include: (1) Cleaning the substrate The substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water respectively; (2) Sputtered ZnO layer Using ZnO as the target material, a ZnO layer is sputtered on the substrate using a radio frequency magnetron sputtering instrument. The operation is as follows: ①Start the instrument After installing the ZnO target and substrate, close the chamber cover of the magnetron sputtering instrument; turn on the water cooler, the main power supply of the magnetron sputtering instrument, and the mechanical pump; after 30 seconds, open the fore valve, turn on the vacuum gauge, and open the stop valve when the pressure in the sputtering chamber reaches 10Pa; after opening the stop valve, turn on the gas flow meter, turn on the argon gas cylinder, adjust the gas flow meter knob for ventilation for 15 seconds, and then close it to exhaust the original air in the chamber; when the pressure drops to 5Pa, turn on the molecular pump and RF power supply; ② Start sputtering The pressure dropped to 5×10 -3 When the pressure reaches 0.0457 Pa, close the vent handle and adjust the gas flow meter knob to introduce argon gas to raise the gas pressure to the set value; start the substrate rotation, and adjust the voltage level and RF matcher to start the sputtering chamber and reach the preset sputtering power. Time the sputtering to the set time and end the sputtering. ③ Turn off the instrument Adjust the RF power supply voltage gear to zero, and turn off the gas cylinder, gas flow meter, substrate rotation, and molecular pump; after the molecular pump speed returns to zero, close the stop valve, vacuum gauge, fore valve, and mechanical pump in sequence; open the vent handle and open the gas valve; after silence, turn off the vent valve, main power supply, and water cooler; open the chamber cover, take out the sample, and remove the target material.

2. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: In the step (1), a transparent glass substrate is used.

3. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 2, characterized in that: The transparent glass substrate is ultra-white rolled patterned glass or a glass slide.

4. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: In the step (1), the substrate is ultrasonically cleaned with acetone, anhydrous ethanol and deionized water for 15 minutes respectively.

5. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: In step (2)①, the ZnO target has a purity of 99.99%, a diameter of 2 inches, a thickness of 3 mm, and is bound with a 1 mm copper backing plate.

6. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: In the step (2)②, the gas flow meter knob is adjusted to introduce argon gas, and after the gas pressure rises to the set value of 1.3 Pa, the substrate rotation is started.

7. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: In the step (2)②, the sputtering power is preset to 50-150W, and the duration is set to 20-30min.

8. The method for preparing the ultraviolet shielding hydrophobic transparent film according to claim 1, characterized in that: During the processes ① and ② of step (2), the substrate is at room temperature.

Citation Information

Patent Citations

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