Photoelectric coupling type LSPR (Localized Surface Plasmon Resonance) variable infrared emissivity device as well as preparation method and application thereof

Abstract

The invention discloses a photoelectric coupling type LSPR (Local Surface Plasmon Resonance) variable infrared emissivity device as well as a preparation method and application thereof. The photoelectric coupling type LSPR variable infrared emissivity device sequentially comprises a conductive substrate layer, a hole layer, an aluminum-doped zinc oxide nanocrystalline layer and an infrared transparent electrode layer from bottom to top, the infrared transparent electrode layer and the conductive substrate layer are respectively connected with the positive electrode and the negative electrode; the infrared transparent electrode layer is made of a material capable of transmitting ultraviolet light and infrared light, and the hole layer is made of a material capable of realizing electron storage and transmission; the aluminum-doped zinc oxide nanocrystal layer is excited by ultraviolet light to generate photoelectrons, the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer, after positive voltage is applied, the photoelectrons are transferred to the hole layer, and the infrared emissivity is regulated and controlled through electron transfer. The photoelectric coupling type LSPR variable infrared emissivity device prepared by the invention has the advantages of simple structure of a photoinduced variable infrared emissivity device and flexible regulation and control of an electroinduced variable infrared emissivity device.

Description

Technical Field

[0001] The invention belongs to the technical field of infrared dynamic camouflage, and in particular relates to a photoelectrically coupled LSPR variable infrared emissivity device and a preparation method and application thereof. Background Art

[0002] Traditional dynamic regulation mechanisms for infrared emissivity usually rely on a single triggering method such as light, electricity, force, and heat. However, the above single triggering methods usually face problems such as inflexible regulation and unstable performance. For example, existing electrotropic infrared emissivity devices have complex structures and low performance reliability; while phototropic infrared emissivity devices have simple structures, but the oxidation recovery process takes several hours, resulting in inflexible regulation.

[0003] Chinese patent document CN116430631A discloses a novel electrovariable infrared emissivity device and a preparation method thereof. The electrovariable infrared emissivity device includes, from top to bottom, an infrared transparent substrate layer, a variable infrared emissivity functional layer, an infrared high reflective layer, an electrolyte layer, an ion storage layer and a counter electrode layer. Although the adjustment is relatively flexible, the structure is relatively complex and multiple functional layers need to be set to realize the storage and transmission of electrons under the electrovariable effect. Summary of the invention

[0004] In order to overcome the problems in the prior art, the present invention provides a photoelectrically coupled LSPR variable infrared emissivity device and a preparation method thereof. The device has the advantages of simple structure of a photovariable infrared emissivity device and flexible regulation of an electrovariable infrared emissivity device. A photoelectric coupling regulation method is adopted to obtain a new variable infrared emissivity device with structural reliability and flexible regulation.

[0005] In order to solve the above technical problems, the technical solution proposed by the present invention is: The invention provides a photoelectrically coupled LSPR variable infrared emissivity device, which comprises, from bottom to top, a conductive substrate layer, a hole layer, an aluminum-doped zinc oxide nanocrystal layer and an infrared transparent electrode layer, wherein the infrared transparent electrode layer and the conductive substrate layer are respectively connected to a positive electrode and a negative electrode; the infrared transparent electrode layer is made of a material capable of transmitting ultraviolet light and infrared light; the hole layer is made of a material capable of realizing electron storage and transmission; the aluminum-doped zinc oxide nanocrystal layer is excited by ultraviolet light to generate photoelectrons, the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer, and after a positive voltage is applied to the infrared transparent electrode layer, the photoelectrons in the aluminum-doped zinc oxide nanocrystal layer are excited to be transferred to the hole layer, so that the infrared emissivity is regulated by the electron transfer.

[0006] Based on the principle that the dynamic regulation of LSPR (localized surface plasmon resonance) of aluminum-doped zinc oxide nanocrystals (AZO nanocrystals) can be triggered by ultraviolet light and electric field at the same time, the present invention proposes a new mechanism for dynamic regulation of infrared emissivity through photoelectric coupling and coordinated regulation. An infrared transparent electrode layer that can transmit ultraviolet light and infrared light is set on the upper layer to ensure the transmission of ultraviolet light and infrared light. Ultraviolet light is used to irradiate AZO nanocrystals and stimulate photoelectrons to be injected into AZO nanocrystals. The LSPR absorption of AZO nanocrystals is enhanced, and the device is transformed into a high infrared emissivity state. After a positive voltage is applied through the infrared transparent electrode layer, the photoelectrons in the aluminum-doped zinc oxide nanocrystal layer are stimulated to transfer to the hole layer, the carrier concentration in the AZO nanocrystals is reduced, the LSPR absorption is weakened, and the device is transformed into a low infrared emissivity state, thereby realizing the regulation of infrared emissivity.

[0007] As an optional embodiment, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the material of the hole layer is selected from NiO x , CuGaO2 or a doping material, wherein the doping material is selected from doped NiO x Or inorganic hole transport materials of CuGaO2.

[0008] The hole layer in the present invention mainly serves as an electron "reservoir" for combining electrons released from AZO nanocrystals to achieve effective hole transmission and improve the stability of the photoelectric coupling device.

[0009] As an optional implementation, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the infrared light transmittance of the infrared transparent electrode layer is greater than 60%, and the ultraviolet light transmittance of the infrared transparent electrode layer is greater than 60%.

[0010] As an optional embodiment, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the material of the infrared transparent electrode layer is selected from one of a metal grid, a conductive silver wire, a multilayer graphene or a metal with a thickness less than 10 nm.

[0011] As an optional embodiment, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the material of the conductive substrate layer is selected from one of a rigid aluminum plate, a rigid copper plate, a flexible aluminum foil and a PET film sputtered with ITO (indium tin oxide).

[0012] The conductive substrate layer in the present invention serves as a carrier layer for each functional layer, and its main functions are to provide an infrared high-reflection background and to serve as a counter electrode for applying an electric field.

[0013] As an optional implementation, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the diameter of the aluminum-doped zinc oxide nanocrystalline layer is 2-20 nm.

[0014] As an optional implementation, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the morphology is one of spherical, triangular prism and square.

[0015] As an optional implementation, in the photoelectrically coupled LSPR variable infrared emissivity device provided by the present invention, the thickness of the aluminum-doped zinc oxide nanocrystals in the aluminum-doped zinc oxide nanocrystal layer is 0.1-10 μm.

[0016] In the present invention, the maximum modulation of the emissivity is achieved by controlling the diameter, morphology and thickness of the aluminum-doped zinc oxide nanocrystalline layer.

[0017] In the present invention, the AZO nanocrystal layer is used as a variable infrared emissivity functional layer. Therefore, in the design of the infrared transparent electrode, the permeability of ultraviolet light and infrared light is considered to ensure that ultraviolet light can effectively pass through the layer to stimulate AZO nanocrystal electron injection, while ensuring high infrared transmittance to show the emissivity regulation characteristics of the lower AZO nanocrystal.

[0018] Based on the same technical concept, the present invention also provides a method for preparing the above-mentioned photoelectrically coupled LSPR variable infrared emissivity device, comprising the following steps: S1. Select a conductive base layer material, lead the electrode wires out of the conductive base layer, and then fix the hole layer material onto the conductive base layer to obtain a hole layer.

[0019] S2, fixing the aluminum-doped zinc oxide nanocrystals onto the hole layer material in step S1 to obtain an aluminum-doped zinc oxide nanocrystal layer.

[0020] S3, fixing the infrared transparent electrode layer material on the aluminum-doped zinc oxide nanocrystalline layer in step S2, and leading the electrode lead out of the infrared transparent electrode layer to obtain a photoelectrically coupled LSPR variable infrared emissivity device.

[0021] As an optional implementation, in the preparation method provided by the present invention, in step S1, the hole layer material is fixed to the conductive base layer by magnetron sputtering or electron beam evaporation process.

[0022] As an optional implementation, in the preparation method provided by the present invention, in step S2, the aluminum-doped zinc oxide nanocrystalline layer is prepared by inkjet printing, slit coating, spraying or spin coating.

[0023] As an optional implementation, in the preparation method provided by the present invention, in step S3, the infrared transparent electrode layer is prepared by spraying, chemical transfer, magnetron sputtering or electron beam evaporation process.

[0024] Based on the same technical concept, the present invention also provides the application of the above-mentioned photoelectric coupling type LSPR variable infrared emissivity device in the field of infrared dynamic camouflage.

[0025] As an optional implementation, in the application provided by the present invention, the application method is as follows: ultraviolet light is irradiated on the aluminum-doped zinc oxide nanocrystal layer to generate photoelectrons, and the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer, so that the photoelectrically coupled LSPR variable infrared emissivity device is transformed into a high infrared emissivity state; after applying a positive voltage to the infrared transparent electrode layer, the photoelectron transfer in the aluminum-doped zinc oxide nanocrystal layer is stimulated, so that the photoelectrically coupled LSPR variable infrared emissivity device is transformed into a low infrared emissivity state.

[0026] Localized Surface Plasmon Resonance (LSPR) refers to the phenomenon that when light is incident on nanoparticles with good conductivity, if the frequency of the incident photons matches the oscillation frequency of the nanoparticles, the nanoparticles will have a strong absorption effect on the photon energy, and localized surface plasmon resonance will occur, and a strong resonance absorption peak will appear in the spectrum.

[0027] Compared with the prior art, the present invention has the following beneficial effects: Based on the principle that AZO nanocrystal LSPR dynamic regulation can be triggered by ultraviolet light and electric field at the same time, the present invention proposes a dynamic infrared emissivity control device through photoelectric coupling and coordinated regulation. The device structure has the advantages of simple structure of photoinduced infrared emissivity device and flexible regulation of electroinduced infrared emissivity device. The photoelectric coupling regulation method is adopted to realize the construction of a new type of variable infrared emissivity device with structural reliability and flexible regulation, which is expected to promote the application of variable infrared emissivity devices in infrared dynamic camouflage. At the same time, the photoelectric coupling regulation method also provides a new regulation idea for variable infrared emissivity devices based on other principles. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 Schematic diagram of the structure principle of the variable infrared emissivity device in the present invention, wherein Figure 1 (a) is a schematic diagram of the structure. Figure 1 (b) is a schematic diagram of the principle; Figure 2The emissivity control result of the photoelectrically coupled LSPR variable infrared emissivity device prepared in Example 1; Figure 3 This is the response time result of the photoelectrically coupled LSPR variable infrared emissivity device prepared in Example 1. DETAILED DESCRIPTION

[0030] In order to facilitate the understanding of the present invention, the present invention will be described more comprehensively and meticulously below in conjunction with the accompanying drawings and preferred embodiments of the present invention, but the protection scope of the present invention is not limited to the following specific embodiments.

[0031] Unless otherwise defined, all professional terms used below have the same meanings as those generally understood by those skilled in the art. The professional terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention.

[0032] Unless otherwise specified, various raw materials, reagents, instruments and equipment used in the present invention can be purchased from the market or prepared by existing methods.

[0033] Example 1 A method for preparing a photoelectrically coupled LSPR variable infrared emissivity device comprises the following steps: (1) Preparation of aluminum-doped zinc oxide nanocrystal dispersion Zinc acetate (15.84mmol) and aluminum acetylacetonate (0.16mmol) were dissolved in 32mL of oleic acid. Degassing was performed at 110°C for 1 hour, and then 16mL of oleylamine was added. Further degassing was performed at this temperature for 15 minutes to obtain a metal precursor. Excess oleyl alcohol (160mL) was heated to 280°C under strong stirring in a 250mL three-necked round-bottom flask, and 45mL (15mmol) of the metal precursor was slowly added using a syringe pump at an injection rate of 3mL / min. Nitrogen was charged at the same time, and the nitrogen flow rate was 20L / h to facilitate the removal of excess water vapor formed. Nanocrystals were obtained after 1h of reaction. After washing the nanocrystals with toluene / ethanol solution, the nanocrystals were dispersed in toluene solvent to obtain spherical aluminum-doped zinc oxide nanocrystal dispersion.

[0034] (2) A commercial ITO sputtered PET film was selected as the conductive substrate layer, and the ITO film thickness was 200 nm. An electron beam evaporation coating machine was used to deposit about 200 nm of NiO at a deposition rate of 1 A / s. x Evaporated onto the conductive substrate as a cavity layer.

[0035] (3) The aluminum-doped zinc oxide nanocrystal dispersion prepared in (1) was spin-coated on the hole layer at a speed of 1000 rpm for 60 s, followed by 4000 rpm for 20 s, and the above spin-coating process was repeated until the film thickness reached 1.1 μm.

[0036] (4) Using an electron beam evaporation coating machine, a Pt metal with a thickness of about 5 nm was evaporated onto the AZO nanocrystalline layer at a deposition rate of 1 A / s as an infrared transparent electrode layer. A 0.1 mm silver wire was tightly adhered to the ultra-thin metal film of the Pt metal and the conductive substrate layer using transparent double-sided tape, so that the silver wire was in full contact with the ultra-thin metal film of the Pt metal and the conductive substrate layer to ensure good conductivity.

[0037] The schematic diagram of the structure principle of the photoelectrically coupled LSPR variable infrared emissivity device prepared in this embodiment is as follows: Figure 1 As shown, Figure 1 (a) is a schematic diagram of the structure. Figure 1 (b) is a schematic diagram of the principle, where the conductive substrate layer is a PET film evaporated with ITO. The hole layer is a 200nm NiO x The AZO nanocrystalline layer is 1.1 μm thick. The infrared transparent electrode layer is 5 nm Pt ultra-thin metal.

[0038] Example 2 A method for preparing a photoelectrically coupled LSPR variable infrared emissivity device comprises the following steps: (1) Preparation of aluminum-doped zinc oxide nanocrystal dispersion Zinc acetate (14.4mmol) and aluminum acetylacetonate (1.6mmol) were dissolved in 32mL of oleic acid. Degassing was performed at 110°C for 1 hour, and then 16mL of oleylamine was added. Further degassing was performed at this temperature for 15 minutes to obtain a metal precursor. Excess oleyl alcohol (160mL) was heated to 280°C under strong stirring in a 250mL three-necked round-bottom flask, and 45mL (15mmol) of the metal precursor was slowly added using a syringe pump at an injection rate of 3mL / min. Nitrogen was charged at the same time, and the nitrogen flow rate was 20L / h to facilitate the removal of excess water vapor formed. Nanocrystals were obtained after 1h of reaction. After washing the nanocrystals with toluene / ethanol solution, the nanocrystals were dispersed in toluene solvent to obtain spherical aluminum-doped zinc oxide nanocrystal dispersion.

[0039] (2) A rigid aluminum plate conductive substrate material with a thickness of 1 mm was selected, and approximately 200 nm of CuGaO2 was evaporated onto the conductive substrate layer as a hole layer using an electron beam evaporation coating machine at a deposition rate of 1 A / s.

[0040] (3) Spin-coat the aluminum-doped zinc oxide nanocrystal dispersion prepared in (1) onto the holes at a speed of 800 rpm for 60 s, then at 3000 rpm for 20 s, and repeat the above spin-coating process until the film thickness reaches 5 μm.

[0041] (4) Use a spray gun or spin coater to evenly coat the nanosilver wire suspension on the nanocrystalline film, place the coated substrate in an oven, and dry it at an appropriate temperature (such as 80°C) for a period of time until the solvent is completely evaporated. Place the dried material in an annealing furnace, set the temperature between 100-300°C, and the time is 1-2 hours. Use transparent double-sided tape to tightly adhere the silver wire to the infrared transparent electrode layer and the conductive substrate layer, respectively, so that the silver wire is in full contact with the infrared transparent electrode layer and the conductive substrate layer, respectively, to ensure good conductivity.

[0042] The structure of the photoelectrically coupled LSPR variable infrared emissivity device prepared in this embodiment is as follows: Figure 1 As shown, the conductive substrate layer is a rigid aluminum plate, the cavity layer is a 200nm CuGaO2 film, the AZO nanocrystalline layer is 5μm, and the infrared transparent electrode layer is a conductive silver wire.

[0043] Example 3 A method for preparing a photoelectrically coupled LSPR variable infrared emissivity device comprises the following steps: (1) Preparation of aluminum-doped zinc oxide nanocrystal dispersion Zinc acetate (15.2mmol) and aluminum acetylacetonate (0.8mmol) were dissolved in 32mL of oleic acid. Degassing was performed at 110°C for 1 hour, and then 16mL of oleylamine was added. Further degassing was performed at this temperature for 15 minutes to obtain a metal precursor. Excess oleyl alcohol (160mL) was heated to 280°C under strong stirring in a 250mL three-necked round-bottom flask, and 45mL (15mmol) of the metal precursor was slowly added using a syringe pump at an injection rate of 3mL / min. Nitrogen was charged at the same time, and the nitrogen flow rate was 20L / h to facilitate the removal of excess water vapor formed. Nanocrystals were obtained after 1h of reaction. After washing the nanocrystals with toluene / ethanol solution, the nanocrystals were dispersed in toluene solvent to obtain a triangular prism-shaped aluminum-doped zinc oxide nanocrystal dispersion.

[0044] (2) A 1 mm thick rigid copper conductive substrate material was selected, and about 200 nm of CuGaO2 and doped NiO were deposited at a deposition rate of 1 A / s using an electron beam evaporation coating machine. x Evaporated onto the conductive substrate as a cavity layer.

[0045] (3) Spin-coat the aluminum-doped zinc oxide nanocrystal dispersion prepared in (1) onto the holes at a spin-coating speed of 400 rpm for 60 s, then at 2000 rpm for 20 s, and repeat the above spin-coating process until the film thickness reaches 3 μm.

[0046] (4) An electron beam evaporation coating machine was used to evaporate Ir metal with a thickness of about 3 nm onto the AZO nanocrystalline layer at a deposition rate of 1 A / s as an infrared transparent electrode layer. A 0.1 mm silver wire was tightly adhered to the ultra-thin metal film of Ir metal and the conductive substrate layer using transparent double-sided tape, so that the silver wire was in full contact with the ultra-thin metal film of Ir metal and the conductive substrate layer to ensure good conductivity.

[0047] The structure of the photoelectrically coupled LSPR variable infrared emissivity device prepared in this embodiment is as follows: Figure 1 As shown, the conductive substrate layer is a rigid copper plate. The hole layer is a 200nm CuGaO2 film. The AZO nanocrystalline layer is 3 μm. The infrared transparent electrode layer is a 3nm Ir ultra-thin metal.

[0048] Performance Testing (1) Infrared spectrum detection of photocoupled LSPR variable infrared emissivity device The infrared spectrum of the photoelectrically coupled LSPR variable infrared emissivity device prepared in Example 1 is tested. The detection mechanism is that the variable infrared emissivity device is converted into a high infrared emissivity state by injecting photoelectrons into the aluminum-doped zinc oxide nanocrystalline layer through ultraviolet light excitation. By applying a positive voltage to the aluminum-doped zinc oxide nanocrystalline layer, the variable infrared emissivity device is converted into a low infrared emissivity state. The detection method is as follows: The infrared spectrum of the photoelectrically coupled LSPR variable infrared emissivity device is tested using a Fourier transform infrared spectrometer (FTIR). The detection results are as follows: Figure 2 As shown, the dark line (lower part) is +2.5V, and the light line (upper part) is ultraviolet light (UV). By using ultraviolet light to stimulate photoelectron injection into AZO nanocrystals, the LSPR absorption of AZO nanocrystals is enhanced, and the device is transformed into a high infrared emissivity state; by applying a positive voltage to the AZO nanocrystals, the photogenerated carriers in the AZO nanocrystals are transferred to the hole layer, the carrier concentration in the AZO nanocrystals is reduced, the LSPR absorption is weakened, and the device is transformed into a low infrared emissivity state. The emissivity control amount of the device at 3-5μm and 8-14μm is 0.31 and 0.23, respectively.

[0049] (2) Response time detection of photoelectrically coupled LSPR variable infrared emissivity device The response speed stability of the device during multiple cycles was analyzed by combining an electrochemical workstation and an infrared thermal imager. The detection method is to use an infrared thermal imager to record the change in apparent temperature of the photoelectrically coupled LSPR variable infrared emissivity device after positive and negative voltages are applied. The time taken to reach 90% of the maximum apparent temperature after applying the voltage is defined as the response time of the photoelectrically coupled LSPR variable infrared emissivity device. The test results are as follows: Figure 3 As shown by Figure 3 It can be seen that the response time of the device is less than 3.79s.

[0050] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the scope of protection of the present invention.

Claims

1. A photoelectrically coupled LSPR variable infrared emissivity device, characterized in that: The photoelectrically coupled LSPR variable infrared emissivity device comprises, from bottom to top, a conductive substrate layer, a hole layer, an aluminum-doped zinc oxide nanocrystal layer and an infrared transparent electrode layer, wherein the infrared transparent electrode layer and the conductive substrate layer are connected to the positive and negative electrodes respectively; the infrared transparent electrode layer is made of a material that can transmit ultraviolet light and infrared light; the hole layer is made of a material that can realize electron storage and transmission; The aluminum-doped zinc oxide nanocrystalline layer is excited by ultraviolet light to generate photoelectrons, which are injected into the aluminum-doped zinc oxide nanocrystalline layer. After a positive voltage is applied to the infrared transparent electrode layer, the photoelectrons in the aluminum-doped zinc oxide nanocrystalline layer are excited to transfer to the hole layer, and the infrared emissivity is regulated by electron transfer.

2. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The material of the hole layer is selected from NiO x , CuGaO2 or a doping material, wherein the doping material is selected from doped NiO x Or inorganic hole transport materials of CuGaO2.

3. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The infrared light transmittance of the infrared transparent electrode layer is greater than 60%, and the ultraviolet light transmittance of the infrared transparent electrode layer is greater than 60%.

4. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The material of the infrared transparent electrode layer is selected from a metal grid, a conductive silver wire, a multilayer graphene or a metal with a thickness less than 10 nm.

5. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The material of the conductive substrate layer is selected from one of a rigid aluminum plate, a rigid copper plate, a flexible aluminum foil and an ITO sputtered PET film.

6. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The aluminum-doped zinc oxide nanocrystalline layer has a diameter of 2-20 nm and a shape of sphere, triangular prism and square.

7. The photoelectrically coupled LSPR variable infrared emissivity device according to claim 1, characterized in that: The thickness of the aluminum-doped zinc oxide nanocrystals in the aluminum-doped zinc oxide nanocrystal layer is 0.1-10 μm.

8. The method for preparing the photoelectrically coupled LSPR variable infrared emissivity device according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1, selecting a conductive base layer material, leading the electrode wire out of the conductive base layer, and then fixing the hole layer material onto the conductive base layer to obtain a hole layer; S2, fixing the aluminum-doped zinc oxide nanocrystals onto the hole layer material in step S1 to obtain an aluminum-doped zinc oxide nanocrystal layer; S3, fixing the infrared transparent electrode layer material on the aluminum-doped zinc oxide nanocrystalline layer in step S2, and leading the electrode lead out of the infrared transparent electrode layer to obtain a photoelectrically coupled LSPR variable infrared emissivity device.

9. Application of the photoelectrically coupled LSPR variable infrared emissivity device as described in any one of claims 1 to 7 in the field of infrared dynamic camouflage.

10. The use according to claim 9, characterized in that: The application method is as follows: ultraviolet light is irradiated on the aluminum-doped zinc oxide nanocrystalline layer to generate photoelectrons, and the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystalline layer, so that the photoelectric coupling type LSPR variable infrared emissivity device is transformed into a high infrared emissivity state; after a positive voltage is applied to the infrared transparent electrode layer, the photoelectron transfer in the aluminum-doped zinc oxide nanocrystalline layer is stimulated, so that the photoelectric coupling type LSPR variable infrared emissivity device is transformed into a low infrared emissivity state.

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