Mask structure and manufacturing method of circuit wiring

Abstract

The invention discloses a mask structure and a circuit wiring manufacturing method, the mask structure comprises a light shielding part and a light transmission part, the light shielding part comprises a first transfer part and a second transfer part which are adjacent and arranged at an interval and an isolation part, the first transfer part and the second transfer part are respectively used for forming different circuit wiring, the distance between the first transfer part and the second transfer part is less than or equal to 3 microns; the isolation part is arranged between the first transfer part and the second transfer part and is arranged in the length direction of the first transfer part and the second transfer part; the first transfer part and the second transfer part are arranged at intervals with the isolation part; wherein the width of the isolation part is 0.5 micrometer to 1 micrometer. According to the application, the isolation part is arranged between the two transfer parts which are arranged at an interval, so that the light intensity distribution in the exposure process becomes more concentrated, the exposure effect is better, and short circuit caused by too short distance between adjacent circuit traces is avoided. The yield of the driving circuit matrix is improved, and the display quality is optimized.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method for manufacturing a mask structure and circuit routing. Background Art

[0002] As the demand for display market continues to improve, the demand for high-resolution products is increasing year by year, which means that the pixel size of new product designs will become smaller and smaller. Micro-LED (Micro Light-Emitting Diode) light beads are generally small, so the circuit routing needs to be more and more refined. The circuit routing prepared by the mask in the related technology is prone to short circuit or open circuit, and the cost of higher-specification masks increases significantly. Summary of the invention

[0003] In view of this, the present application provides a mask structure and a method for manufacturing circuit wiring to solve the problems in the prior art that circuit wiring prepared by the mask is prone to short circuit or open circuit and the cost of higher specification masks is high.

[0004] In order to solve the above technical problems, the first technical solution provided by the present application is: to provide a mask structure, including a light-shielding portion and a light-transmitting portion, wherein the light-shielding portion includes:

[0005] A first transfer portion and a second transfer portion are adjacently and spaced apart, the first transfer portion and the second transfer portion are respectively used to form different circuit traces; wherein the spacing between the first transfer portion and the second transfer portion is less than or equal to 3 microns;

[0006] An isolation portion is disposed between the first transfer portion and the second transfer portion and is disposed along the length direction of the first transfer portion and the second transfer portion; the first transfer portion and the second transfer portion are both spaced apart from the isolation portion;

[0007] Wherein, the width of the isolation portion is 0.5 micrometer to 1 micrometer.

[0008] Furthermore, a first gap is formed between the first transfer portion and the isolation portion, and a second gap is formed between the second transfer portion and the isolation portion, and the first gap and the second gap have the same width.

[0009] Furthermore, a side of the isolation portion close to the first transfer portion has a plurality of first notches arranged at intervals; and / or

[0010] Another side of the isolation portion close to the second transfer portion has a plurality of second notches arranged at intervals.

[0011] Furthermore, one side of the isolation portion close to the first transfer portion has a plurality of first notches arranged at intervals; another side of the isolation portion close to the second transfer portion has a plurality of second notches arranged at intervals; wherein,

[0012] The adjacent first notches and the second notches are completely staggered in the width direction of the first transfer portion and the second transfer portion; or,

[0013] The adjacent first notches and the second notches are only partially overlapped in the width direction of the first transfer portion and the second transfer portion.

[0014] Further, the isolation portion includes:

[0015] Body part;

[0016] a plurality of first protrusions disposed at intervals on one side of the main body close to the first transfer portion, and / or a plurality of second protrusions disposed at intervals on another side of the main body close to the second transfer portion;

[0017] Wherein, when the isolation portion has the first protrusion and the second protrusion, the first protrusion and the second protrusion are staggered in the width direction of the first transfer portion and the second transfer portion; or, the first protrusion and the second protrusion are alternately and partially overlapped in the width direction of the first transfer portion and the second transfer portion.

[0018] Furthermore, the isolation portion includes a plurality of first sub-isolation portions arranged at intervals and a plurality of second sub-isolation portions arranged at intervals, the patterns of the first sub-isolation portions and the second sub-isolation portions are mirror images of each other, and the edge of the first sub-isolation portion close to the second sub-isolation portion only partially overlaps with the edge of the second sub-isolation portion close to the first sub-isolation portion.

[0019] Furthermore, the mask structure further includes: a third transfer portion, and the third transfer portion includes:

[0020] A first extension portion and a second extension portion are arranged to cross each other, wherein a connection between the first extension portion and the second extension portion has an opening, and the opening is located on a reverse extension line of an angle bisector of an inner angle formed by the first extension portion and the second extension portion;

[0021] Among them, the width of the first extension portion along the first direction is the first width, and the width of the second extension portion along the second direction is the second width; the width of the opening along the first direction is 1 / 20 to 1 / 10 of the first width; the width of the opening along the second direction is 1 / 20 to 1 / 10 of the second width.

[0022] Furthermore, the mask structure further includes:

[0023] A fourth transfer portion; along the width direction of the fourth transfer portion, a first side of the fourth transfer portion has a plurality of third protrusions, and the bottoms of adjacent third protrusions are connected to each other; wherein the width of the fourth transfer portion is less than or equal to 3 microns, and the spacing between the tops of two adjacent third protrusions is 0.5 to 1.5 times the width of the fourth transfer portion.

[0024] Furthermore, along the width direction of the fourth transfer portion, a second side of the fourth transfer portion has a plurality of fourth protrusions, wherein the second side is arranged opposite to the first side, and the plurality of fourth protrusions are symmetrically arranged with the plurality of third protrusions;

[0025] Wherein, the distance between the top ends of the symmetrically arranged third protrusion and the fourth protrusion is 1.2 to 1.6 times the width of the fourth transfer portion.

[0026] In order to solve the above technical problems, the second technical solution provided by the present application is: to provide a method for manufacturing a circuit trace, comprising:

[0027] Providing a substrate, wherein a surface of the substrate is covered with a conductive layer;

[0028] Covering the surface of the conductive layer away from the substrate with a photoresist layer;

[0029] Using any of the above-mentioned masks to expose the photoresist layer to form a patterned photoresist layer;

[0030] Using the patterned photoresist layer as a mask, etching the conductive layer so that the conductive layer forms a pattern corresponding to the transfer portion; and

[0031] The photoresist layer is removed.

[0032] Beneficial effects of the present application: Different from the prior art, the mask structure of the present application may include a shading portion and a light-transmitting portion, and the shading portion includes: adjacent and spaced first and second transfer portions and an isolation portion, the first transfer portion and the second transfer portion are respectively used to form different circuit traces, wherein the spacing between the first transfer portion and the second transfer portion is less than or equal to 3 microns; the isolation portion is arranged between the first transfer portion and the second transfer portion, and is arranged along the length direction of the first transfer portion and the second transfer portion; the first transfer portion and the second transfer portion are both spaced apart from the isolation portion; wherein the width of the isolation portion is 0.5 microns to 1 micron. The present application sets an isolation portion between the two spaced transfer portions, so that the light intensity distribution in the exposure process becomes more concentrated, the exposure effect is better, and the short circuit is avoided due to the close distance between adjacent circuit traces. The mask pattern of the circuit trace is finely designed, so that the circuit trace exposed by the ordinary mask can also be comparable to the effect of the high-specification mask, thereby effectively improving the yield of the Micro-LED drive circuit matrix, and optimizing the display quality without increasing the cost of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technical workers in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0034] Figure 1 It is a schematic diagram of the partial structure of the mask provided in the first embodiment of the present application;

[0035] Figure 2 yes Figure 1 The structure of the A part in the figure is an enlarged schematic diagram, wherein the isolation part structure is a first structural schematic diagram of the isolation part provided in the first embodiment of the present application;

[0036] Figure 3 : is a schematic diagram of the light intensity comparison between the mask provided with the isolation part in the present application and the mask not provided with the isolation part in the comparative example; wherein Figure 3 (a) is a mask without an isolation portion in a comparative example; Figure 3 (b) is a mask provided in the present application with an isolation portion;

[0037] Figure 4 is a schematic diagram of a second structure of the isolation portion provided in the first embodiment of the present application, wherein: Figure 4 (a) is to form a notch only on one side of the isolation portion close to the first transfer portion or the second transfer portion, Figure 4(b) and (c) are to form a first notch on one side of the isolation portion close to the first transfer portion, and to form a second notch on another side of the isolation portion close to the second transfer portion, and Figure 4 In (b) and (c), the first notch and the second notch are staggered;

[0038] Figure 5 is a schematic diagram of a second structure of the isolation portion provided in the first embodiment of the present application, wherein Figure 5 In (a) and (b), the first notch and the second notch are partially overlapped;

[0039] Figure 6 is a schematic diagram of a third structure of the isolation portion provided in the first embodiment of the present application, wherein: Figure 6 (a) is to provide a protrusion only on one side of the isolation portion close to the first transfer portion or the second transfer portion, Figure 6 (b) and (c) are to provide a first protrusion on one side of the isolation portion close to the first transfer portion, and to provide a second protrusion on another side of the isolation portion close to the second transfer portion, and Figure 6 In (b) and (c), the first protrusion and the second protrusion are both staggered;

[0040] Figure 7 is a schematic diagram of a third structure of the isolation portion provided in the first embodiment of the present application, wherein Figure 7 In (a) and (b), the first protrusion and the second protrusion are both partially overlapped;

[0041] Figure 8 is a schematic diagram of the fourth structure of the isolation portion provided in the first embodiment of the present application;

[0042] Fig. 9 is a schematic diagram of the structure of the third transfer portion provided in the second embodiment of the present application and the circuit routing formed therefrom;

[0043] Fig.10 is a schematic diagram of a transfer portion structure and a circuit routing formed therefrom of a comparative example of the third transfer portion provided in the second embodiment of the present application;

[0044] Fig.11 The first comparative example of the mask provided in the present application and the circuit wiring picture formed by exposure using the mask;

[0045] Fig.12 It is the mask of the second comparative example provided in the present application and the circuit wiring picture formed by exposure using the mask;

[0046] Fig.13 It is a partial schematic diagram of a first structure of a fourth transfer portion provided in the third embodiment of the present application;

[0047] Fig.14is a second structural schematic diagram of the fourth transfer part provided in the third embodiment of the present application;

[0048] Fig.15 yes Fig.14 A schematic diagram of the structure enlargement of part C in FIG.

[0049] Fig.16 It is a comparison diagram of the light intensity distribution of the mask of the comparative example and the mask of the present application in the exposure process; wherein, the left side is the light intensity distribution diagram corresponding to the mask of the present application, and the right side is the light intensity distribution diagram corresponding to the mask of the comparative example;

[0050] Fig.17 is a flowchart of a method for manufacturing a circuit trace provided in an embodiment of the present application;

[0051] Fig.18 It is a process flow chart of a method for manufacturing a circuit trace provided in one embodiment of the present application.

[0052] Description of reference numerals:

[0053] 100, mask; L, length direction; W1, width direction of the first transfer portion and the second transfer portion; W2, width direction of the fourth transfer portion; 10, light shielding portion; 20, gap; 21, first gap; 22, second gap; 11, first transfer portion; 12, second transfer portion; 13, isolation portion; 130, main body; 131, first notch; 132, second notch; 133, first protrusion; 134, second protrusion; 135, first sub-isolation portion; 136, second sub-isolation portion; 14, third transfer portion; 141, first extension portion; 142, second extension portion; 15, opening; 16, circuit trace; 17, fourth transfer portion; 17a, first light intensity map; 17b, second light intensity map; 171, first edge; 172, second edge; 173, third protrusion; 174, fourth protrusion; 175, end portion; 30a, pattern; 30b, recess; 41, substrate; 42, conductive layer; 43, photoresist layer. DETAILED DESCRIPTION

[0054] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technical workers in the field without making creative work are within the scope of protection of this application.

[0055] The terms "first", "second" and "first" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" can expressly or implicitly include at least one of the features. All directional indications (such as up, down, left, right, front, back ...) in the embodiments of the present application are only used to explain the relative position relationship, movement conditions, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0056] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0057] During the research process of this application, it was found that: as the demand of the display market continues to improve, the demand for high-resolution products increases year by year, which means that the pixel size of newly designed products will become smaller and smaller. Micro-LED light-emitting lamp beads are generally small, for example, basically less than 100 microns, which is in line with the market demand for small pixel sizes. Therefore, the pixel size of Micro-LED display technology is generally around 100 microns. In such a small range, complex circuit routing is designed to drive the LED lamp beads to emit light, which requires the circuit routing to be more and more refined, so that it is "horizontal and vertical", and no short circuit or open circuit occurs.

[0058] In order to meet the demand for such refined routing, the current practice is to use higher-specification masks for exposure, but the disadvantage of high-specification masks is that the cost is greatly increased, which is about 2-3 times that of ordinary masks, resulting in high overall product costs. Among them, high-specification masks have two more production processes than ordinary masks, and need to be coated twice, using two types of target materials. Ordinary masks only need one coating, one target material, and one drawing. It can be seen that high-specification masks have one more preparation material than ordinary masks, and high-specification masks have better precision and are more expensive.

[0059] In order to solve the above problems, the present application has refined the design of the mask pattern of the circuit routing, so that the circuit routing exposed by the ordinary mask can be comparable to the effect of the high-specification mask, thereby effectively improving the yield of the Micro-LED drive circuit matrix and optimizing the display quality without increasing the cost of the product. The following is a detailed description of the mask structure of the present application through specific embodiments, and the embodiments are divided according to the different transfer part structures on the mask.

[0060] First embodiment: mask structure design for two adjacent different circuit traces.

[0061] See also Figure 1 to Figure 3 , Figure 1 It is a schematic diagram of the partial structure of the mask provided in the first embodiment of the present application; Figure 2 yes Figure 1 The structure of the A part in the enlarged schematic diagram is a schematic diagram of the first structure of the isolation part provided in the first embodiment of the present application; Figure 3 : is a schematic diagram of the light intensity comparison between the mask provided with the isolation part in the present application and the mask not provided with the isolation part in the comparative example; wherein Figure 3 (a) is a mask without an isolation portion in a comparative example; Figure 3 (b) is a mask plate for setting an isolation portion provided in the present application.

[0062] The structure of the mask 100 provided in the first embodiment may include a light shielding portion 10 and a light-transmitting portion. The light shielding portion 10 includes: a first transfer portion 11 and a second transfer portion 12 adjacent to each other and spaced apart, and an isolation portion 13. The first transfer portion 11 and the second transfer portion 12 are respectively used to form different circuit traces, such as different signal lines. The present application mainly solves the problem of the circuit trace 16 of small size and small pixel size of Micro-LED. In a small-sized display panel, such as a children's watch, a sports watch, etc., it is necessary to prepare the circuit trace 16 on a very small substrate. Therefore, the circuit trace 16 needs to be thinner and the spacing between adjacent circuit traces 16 is also smaller. Therefore, the spacing between two adjacent transfer portions on the mask 100 corresponding to the adjacent circuit trace 16 is also smaller. When the spacing between two adjacent transfer portions is less than a certain range, the circuit trace 16 prepared by photolithography is prone to short circuit. Among them, the spacing range provided in the present application can be that the spacing between the first transfer portion 11 and the second transfer portion 12 is less than or equal to 3 microns. For example, 0.5 micron, 1 micron, 1.5 microns, 2 microns, 2.5 microns, etc.

[0063] The isolation portion 13 is disposed between the first transfer portion 11 and the second transfer portion 12, and is disposed along the length direction L of the first transfer portion 11 and the second transfer portion 12, that is, the extension direction of the isolation portion 13 is the same as the extension direction of the first transfer portion 11 and the second transfer portion 12. When the first transfer portion 11 and the second transfer portion 12 are bent, the isolation portion 13 is also bent. The first transfer portion 11 and the second transfer portion 12 are both spaced apart from the isolation portion 13. It can be understood that after the isolation portion 13 is disposed, the first transfer portion 11 and the second transfer portion 12 are still spaced apart from each other and are not in contact with the isolation portion 13. The isolation portion 13 is disposed between the two spaced-apart transfer portions, so that the light intensity distribution in the exposure process becomes more concentrated, the exposure effect is better, and short circuits due to the close distance between adjacent circuit traces 16 are avoided.

[0064] In this embodiment, the width of the isolation portion 13 can be 0.5 microns to 1 micron, so that when the isolation portion 13 is arranged between the first transfer portion 11 and the second transfer portion 12, it can maintain no contact with the first transfer portion 11 and the second transfer portion 12. At the same time, the width of the isolation portion 13 is small enough so that it itself will not be exposed to form a wiring.

[0065] In this embodiment, the first transfer portion 11 and the second transfer portion 12 directly have a gap 20, a first gap 21 is formed between the first transfer portion 11 and the isolation portion 13, and a second gap 22 is formed between the second transfer portion 12 and the isolation portion 13, and the first gap 21 and the second gap 22 have the same width. In the exposure process, the light used for exposure passes through the first gap 21 and the second gap 22 respectively, and after the light passes through the first gap 21 and the second gap 22, the intensity is diffracted and superimposed, so that the photoresist between the first transfer portion 11 and the second transfer portion 12 is completely exposed to light, and the circuit trace 16 finally formed is closer to the preset pattern.

[0066] In the first structure of this embodiment, Figure 2 As shown, one side of the isolation portion 13 close to the first transfer portion 11 and the other side close to the second transfer portion 12 are both straight lines. The straight isolation portion 13 has the advantage of being easier to prepare.

[0067] like Figure 3 As shown, Figure 3 The curve is the light intensity variation curve during the exposure process, where Figure 3 In the comparative example (a), the isolation portion 13 is not provided between the first transfer portion 11 and the second transfer portion 12. It can be seen that the light intensity distribution of the exposure is dispersed and the light intensity is weak, so that the adjacent circuit traces are easily adhered to each other, resulting in a short circuit problem. Figure 3As shown in (b), the present application provides an isolation portion 13. It can be seen that providing the isolation portion 13 can make the exposure light intensity significantly stronger and the light intensity distribution more concentrated, thereby improving the exposure effect and avoiding the problem of adhesion between adjacent circuit traces and causing short circuits.

[0068] See also Figure 4-5 , Figure 4 is a schematic diagram of a second structure of the isolation portion provided in the first embodiment of the present application, wherein: Figure 4 (a) is to form a notch only on one side of the isolation portion close to the first transfer portion or the second transfer portion, Figure 4 (b) and (c) are to form a first notch on one side of the isolation portion close to the first transfer portion, and to form a second notch on another side of the isolation portion close to the second transfer portion, and Figure 4 In (b) and (c), the first notch and the second notch are staggered; Figure 5 is a schematic diagram of a second structure of the isolation portion provided in the first embodiment of the present application, wherein Figure 5 In (a) and (b), the first notch and the second notch are arranged to partially overlap.

[0069] In the second structure of the present embodiment, one side of the isolating portion 13 close to the first transfer portion 11 has a plurality of first notches 131 arranged at intervals; and / or another side of the isolating portion 13 close to the second transfer portion 12 has a plurality of second notches 132 arranged at intervals. That is, in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, as shown in FIG. Figure 4 As shown, the isolation part 13 can have a notch on one side or both sides. In this structure, the width of the isolation part 13 itself can be made slightly larger, for example, 1 micron, so as to ensure that when there is a notch on one side or both sides of the isolation part 13, the isolation part 13 itself has a certain connection strength and remains unbroken. The isolation part 13 with a notch design can allow more light to pass through, thereby effectively improving the light intensity during the exposure process, and can also prevent the isolation part 13 from being exposed to form wiring. The change in light intensity can be referred to Figure 3 shown.

[0070] like Figure 4 As shown, the shapes of the first notch 131 and the second notch 132 can be rectangular, arc, trapezoidal or triangular, etc., and the present application does not make any specific limitation on this.

[0071] Furthermore, in the second structure of this embodiment, a side of the isolation portion 13 close to the first transfer portion 11 has a plurality of first notches 131 arranged at intervals; another side of the isolation portion 13 close to the second transfer portion 12 has a plurality of second notches 132 arranged at intervals. The adjacent first notches 131 and second notches 132 are completely staggered in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, that is, the first notches 131 and the second notches 132 do not overlap at all in the width direction W1 of the first transfer portion 11 and the second transfer portion 12.

[0072] Alternatively, the projections of the adjacent first notches 131 and second notches 132 on the edges of the first transfer portion 11 and the second transfer portion 12 in the width direction W1 are only partially overlapped. The first notches 131 and the second notches 132 that are completely staggered or only partially overlapped can ensure the strength of the isolation portion 13 and prevent the problem of breakage, and can also enhance the light intensity during the exposure process.

[0073] In a specific embodiment, if Figure 5 As shown in (a), the first notch 131 and the second notch 132 may both be triangular, and the triangle is an isosceles triangle with a base angle of 45°.

[0074] See also Figure 6-7 , Figure 6 is a schematic diagram of a third structure of the isolation portion provided in the first embodiment of the present application, wherein: Figure 6 (a) is to provide a protrusion only on one side of the isolation portion close to the first transfer portion or the second transfer portion, Figure 6 (b) and (c) are to provide a first protrusion on one side of the isolation portion close to the first transfer portion, and to provide a second protrusion on another side of the isolation portion close to the second transfer portion, and Figure 6 In (b) and (c), the first protrusion and the second protrusion are both staggered; Figure 7 is a schematic diagram of a third structure of the isolation portion provided in the first embodiment of the present application, wherein Figure 7 In (a) and (b), the first protrusion and the second protrusion are arranged to partially overlap.

[0075] In the third structure of this embodiment, Figure 6 As shown, the isolation portion 13 includes a main body 130, and a plurality of first protrusions 133 disposed at intervals on one side of the main body 130 close to the first transfer portion 11, and / or a plurality of second protrusions 134 disposed at intervals on another side of the main body 130 close to the second transfer portion 12. Figure 6As shown, that is, in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, the main body 130 of the isolation portion 13 may have a protrusion on one side or on both sides. In this structure, the width of the main body 130 can be made slightly smaller, for example 0.6 microns, so that the sum of the widths of the main body 130 and the protrusion does not exceed the preset maximum value (i.e. 1 micron) of the isolation portion 13. The isolation portion 13 with a protrusion design can allow more light to pass through, thereby effectively improving the light intensity during the exposure process, and can also prevent the isolation portion 13 from being exposed to form wiring. Figure 6 As shown, the first protrusion 133 and the second protrusion 134 may be rectangular, arc-shaped, trapezoidal or triangular, etc., and this application does not make any specific limitation on this.

[0076] Specifically, Figure 6 As shown in (b) and (c), when the isolation portion 13 has the first protrusion 133 and the second protrusion 134, the first protrusion 133 and the second protrusion 134 are staggered in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, that is, the first protrusion 133 and the second protrusion 134 do not overlap at all in the width direction W1 of the first transfer portion 11 and the second transfer portion 12.

[0077] Or, if Figure 5 As shown, the first protrusion 133 and the second protrusion 134 are arranged alternately and partially overlapped in the width direction W1 of the first transfer portion 11 and the second transfer portion 12. The alternating arrangement can be understood as, for example, in the length direction L of the first transfer portion 11 and the second transfer portion 12, firstly one of the first protrusion 133 and the second protrusion 134 is arranged on the two sides of the main body 130, and then the other is arranged, and the arrangement is repeated alternately in sequence. The first protrusion 133 and the second protrusion 134 are only partially overlapped in the width direction W1 to avoid the problem of the connection between the first protrusion 133 and the second protrusion 134 being too thin and causing a break, wherein the light intensity change can refer to Figure 3 shown.

[0078] like Figure 6 As shown in (c), the first protrusion 133 and the second protrusion 134 are both triangular, and the triangle is an isosceles triangle with a base angle of 45°.

[0079] See also Figure 8 , Figure 8 This is a schematic diagram of the fourth structure of the isolation part provided in the first embodiment of the present application.

[0080] In the fourth structure of this embodiment, Figure 8As shown, the isolation portion 13 includes a plurality of first sub-isolation portions 135 and a plurality of second sub-isolation portions 136 arranged at intervals, and the patterns of the first sub-isolation portion 135 and the second sub-isolation portion 136 are mirror images of each other. In the width direction W1 of the first transfer portion 11 and the second transfer portion 12, the side of the first sub-isolation portion 135 close to the second sub-isolation portion 136 only partially overlaps with the side of the second sub-isolation portion 136 close to the first sub-isolation portion 135, forming a closed pattern. The first sub-isolation portion 135 and the second sub-isolation portion 136 can be rectangular, arc-shaped, trapezoidal or triangular, etc. Preferably, the first sub-isolation portion 135 and the second sub-isolation portion 136 are isosceles triangles with a base angle of 45°, and the bases of the two isosceles triangles are in contact with each other and partially overlap. On the one hand, it can ensure the strength of the isolation portion 13 and prevent the problem of breakage. On the other hand, it can also enhance the light intensity during the exposure process. The change in light intensity can refer to Figure 3 As shown. Figure 8 As shown, it can be seen that in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, the first sub-isolating portion 135 and the second sub-isolating portion 136 have partially overlapped positions, such as the area corresponding to a.

[0081] Second embodiment: Refined design of corners in the mask.

[0082] See also Figure 9-10 , Fig. 9 is a schematic diagram of the structure of the third transfer portion provided in the second embodiment of the present application and the circuit routing formed therefrom; Fig.10 It is a schematic diagram of the transfer part structure and the circuit routing formed therefrom of a comparative example of the third transfer part provided in the present application.

[0083] In this embodiment, the structure of the mask 100 may further include: a third transfer portion 14, the third transfer portion 14 includes: a first extension portion 141 and a second extension portion 142 arranged crosswise with each other, the connection of the first extension portion 141 and the second extension portion 142 has an opening 15, and the opening 15 is located on the reverse extension line of the angle bisector of the inner angle formed by the first extension portion 141 and the second extension portion 142. Specifically, the first extension portion 141 and the second extension portion 142 are arranged vertically, and the opening 15 is located at the right angle formed by the first extension portion 141 and the second extension portion 142.

[0084] Specifically, the width of the first extension portion 141 along the first direction is defined as the first width, and the width of the second extension portion 142 along the second direction is defined as the second width; the width of the opening 15 along the first direction is 1 / 20 to 1 / 10 of the first width; the width of the opening 15 along the second direction is 1 / 20 to 1 / 10 of the second width. For example, when the first width and the second width are 3 microns, the width of the opening 15 along the first direction and the width of the second direction are both 3 / 20 to 3 / 10.

[0085] For reference Fig. 9 and Fig.10 It is known that: this application Fig. 9 The third transfer portion 14 is compared with the comparative example Fig.10 The mask plate 100 has the above-mentioned opening 15 set at a right-angle corner position of the mask plate 100. Fig.10 The corners of the circuit traces 16 exposed by the mask 100 are circular, such as Fig.10 As shown at position B2 in the figure, the pattern is quite different from that of the mask 100 itself. The present application provides an opening 15 at the corner of the first extension portion 141 and the second extension portion 142, so that the exposure light intensity distribution range is larger and the light intensity is stronger, thereby improving the exposure accuracy of the circuit trace 16. Fig. 9 At position B1, it can be seen that the corner of the circuit trace 16 exposed by the third transfer portion 14 is closer to a right angle.

[0086] The third embodiment: a detailed design is performed on the mask pattern that needs to expose fine lines.

[0087] See also Figures 11 to 16 , Fig.11 The first comparative example of the mask provided in the present application and the circuit wiring picture formed by exposure using the mask; Fig.12 It is the mask of the second comparative example provided in the present application and the circuit wiring picture formed by exposure using the mask; Fig.13 It is a partial schematic diagram of a first structure of a fourth transfer portion provided in the third embodiment of the present application; Fig.14 is a second structural schematic diagram of the fourth transfer part provided in the third embodiment of the present application; Fig.15 yes Fig.14 A schematic diagram of the structure enlargement of part C in FIG. Fig.16 This is a comparison diagram of the light intensity distribution of the comparative mask and the mask of the present application during the exposure process; wherein the left side is the light intensity distribution diagram corresponding to the mask of the present application, and the right side is the light intensity distribution diagram corresponding to the comparative mask.

[0088] When the line width of the circuit trace 16 needs to be less than 3 microns, such as Fig.11 As shown, the pattern 30a with a size less than 1.5 microns disappears after being exposed by a common mask ( Fig.11 Another way, such as Fig.12 As shown, when the line width of the circuit line 16 is 2 microns, after being exposed by a common mask, a depression 30b appears in the line. For this, a fine line design is required.

[0089] In this embodiment, the mask 100 structure may further include a fourth transfer portion 17; along the width direction W2 of the fourth transfer portion 17, as shown in FIG. Fig.13As shown, the first side 171 of the fourth transfer portion 17 has a plurality of third protrusions 173, and the bottoms of adjacent third protrusions 173 are connected to each other, which can also be understood as that, on the first side 171, a plurality of third protrusions 173 are continuously arranged. Wherein, the width of the fourth transfer portion 17 is less than or equal to 3 microns, and the spacing Z between the tops of two adjacent third protrusions 173 is 0.5 to 1.5 times the width of the fourth transfer portion 17, preferably 0.7 to 1.2 times. For example, when the width of the fourth transfer portion 17 is 2 microns, the spacing between the tops of two adjacent third protrusions 173 can be 1 micron to 3 microns.

[0090] In a further embodiment, Figure 14-15 As shown, along the width direction W2 of the fourth transfer portion 17, a plurality of fourth protrusions 174 are provided on the second side 172 of the fourth transfer portion 17, wherein the second side 172 is arranged opposite to the first side 171, and the plurality of fourth protrusions 174 are arranged symmetrically with the plurality of third protrusions 173. That is, in the width direction W2 of the fourth transfer portion 17, the fourth protrusions 174 are arranged opposite to and symmetrically with the third protrusions 173, and are arranged in pairs. By arranging the plurality of third protrusions 173 and the plurality of third protrusions 173, during the exposure process, the circuit trace 16 formed by the fourth transfer portion 17 is closer to the design pattern of the circuit trace 16 in shape and size through the diffraction effect of light, thereby improving the preparation accuracy of the circuit trace 16, thereby improving the circuit conduction efficiency, greatly reducing the situation of disconnection of the circuit trace 16, and improving the display effect.

[0091] Among them, Fig.15 As shown, the distance Y between the tops of the symmetrically arranged third protrusions 173 and fourth protrusions 174 is 1.2 to 1.6 times, preferably 1.2 to 1.4 times, the width X of the fourth transfer portion 17. For example, the protrusion height of each third protrusion 173 and fourth protrusion 174 relative to the fourth transfer portion 17 is 0.3 to 0.9 microns.

[0092] The third protrusion 173 and the fourth protrusion 174 may be rectangular, arcuate, trapezoidal or triangular, etc., and this application does not make any specific limitation on this. Fig.15 As shown, the third protrusion 173 and the fourth protrusion 174 may be sawtooth-shaped, and further, the third protrusion 173 and the fourth protrusion 174 are both isosceles triangles with a base angle α of 45°, so that the light in the exposure process is diffracted around the triangle, and the precision of the formed circuit trace 16 is improved.

[0093] like Fig.16 The light intensity distribution comparison picture shown in the figure shows that the first light intensity Fig.17 a is a light intensity picture of the structure exposure process of the fourth transfer part 17 of the present application, and the second light intensity Fig.17b is a light intensity picture of the transfer part structure in the comparative example during the exposure process, from which it can be clearly seen that the light intensity of the fine lines designed in the present application is greater, thereby making the exposed circuit routing more accurate.

[0094] In addition, if Fig.15 As shown, the end 175 of the fourth transfer portion 17 may also be an isosceles triangle with a base angle β of 45°, so that during the exposure process, the 45° angle of the isosceles triangle formed by the third protrusion 173 and the fourth protrusion 174 and the 45° angle of the end 175 of the fourth transfer portion 17 form a straight line, thereby avoiding the formation of a gap at the end 175 of the fourth transfer portion 17, thereby avoiding the circuit trace 16 formed by the fourth transfer portion 17 from shrinking at the end 175, and making the circuit trace 16 at the end 175 closer to the design pattern.

[0095] In order to solve the above problems, the present application also provides a method for manufacturing circuit routing.

[0096] See also Figure 17-18 , Fig.17 is a flowchart of a method for manufacturing a circuit trace provided in an embodiment of the present application; Fig.18 It is a process flow chart of a method for manufacturing a circuit trace provided in one embodiment of the present application.

[0097] The method for manufacturing the circuit trace 16 may include the following steps:

[0098] S1: Provide a substrate 41 , the surface of which is covered with a conductive layer 42 .

[0099] Specifically, the base 41 (not shown) can be used as a substrate for a circuit board, such as glass, plastic, etc., and a conductive layer 42 (not shown) can be prepared on a surface of the base 41 through a deposition process. The conductive layer 42 is specifically a metal layer, for example, formed by metals such as copper and filter.

[0100] S2: Covering the surface of the conductive layer 42 away from the substrate 41 with a photoresist layer 43 .

[0101] Specifically, a photoresist layer 43 is coated on the surface of the conductive layer 42 away from the substrate 41 to form a covering layer.

[0102] S3: using any of the above-mentioned mask plates 100 to expose the photoresist layer 43 to form a patterned photoresist layer 43 .

[0103] Specifically, the mask 100 is placed on a side of the photoresist layer 43 away from the conductive layer 42 , and the photoresist layer 43 is exposed by ultraviolet light or the like, so that the pattern on the mask 100 is transferred to the photoresist layer 43 to form a patterned photoresist layer 43 .

[0104] S4: using the patterned photoresist layer 43 as a mask, the conductive layer 42 is etched so that the conductive layer 42 forms a pattern corresponding to the transfer portion.

[0105] Specifically, the conductive layer 42 is etched by an etching solution using the patterned photoresist layer 43 as a mask, so that the conductive layer 42 forms a pattern corresponding to the transfer portion, that is, the circuit trace 16 pattern formed by the shading portion 10 of the mask plate 100 corresponds to the pattern of the transfer portion. The isolation portion 13 designed during the exposure and etching process is only to assist in forming a circuit trace 16 that is more precise and closer to the designed pattern, and will not be formed in the final circuit trace 16 pattern.

[0106] S5: removing the photoresist layer 43.

[0107] Specifically, the photoresist layer 43 is stripped off.

[0108] By adopting the above-mentioned mask plate 100 to prepare the circuit trace 16, the preparation accuracy of the circuit trace 16 is higher, and the problems of easy disconnection caused by the depression of the existing circuit trace 16 and short circuit caused by incomplete exposure of the circuit trace 16 are solved, and the conductive efficiency of the circuit is improved, the display effect is improved, and the exposure effect of the high-specification mask plate can be achieved without increasing the preparation cost, thereby improving the competitiveness of the product.

[0109] The mask structure disclosed in the present application may include a shading portion and a light-transmitting portion. The shading portion includes: a first transfer portion and a second transfer portion that are adjacent and spaced apart, and an isolation portion. The first transfer portion and the second transfer portion are respectively used to form different circuit traces, wherein the spacing between the first transfer portion and the second transfer portion is less than or equal to 3 microns; the isolation portion is arranged between the first transfer portion and the second transfer portion, and is arranged along the length direction of the first transfer portion and the second transfer portion; the first transfer portion and the second transfer portion are both spaced apart from the isolation portion; wherein the width of the isolation portion is 0.5 microns to 1 micron. The present application sets an isolation portion between the two spaced apart transfer portions, so that the light intensity distribution in the exposure process becomes more concentrated, the exposure effect is better, and short circuits are avoided due to the close distance between adjacent circuit traces. The mask pattern of the circuit trace is finely designed, so that the circuit trace exposed by the ordinary mask can also be comparable to the effect of the high-specification mask, thereby effectively improving the yield of the Micro-LED drive circuit matrix, and optimizing the display quality, while not increasing the cost of the product, greatly improving the competitiveness of the product.

[0110] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A mask structure, characterized in that: It includes a light-shielding portion and a light-transmitting portion, wherein the light-shielding portion includes: A first transfer portion and a second transfer portion are adjacently and spaced apart, the first transfer portion and the second transfer portion are respectively used to form different circuit traces; wherein the spacing between the first transfer portion and the second transfer portion is less than or equal to 3 microns; An isolation portion is disposed between the first transfer portion and the second transfer portion and is disposed along the length direction of the first transfer portion and the second transfer portion; the first transfer portion and the second transfer portion are both spaced apart from the isolation portion; Wherein, the width of the isolation portion is 0.5 micrometer to 1 micrometer.

2. The mask structure according to claim 1, characterized in that: A first gap is formed between the first transfer portion and the isolation portion, and a second gap is formed between the second transfer portion and the isolation portion. The first gap and the second gap have the same width.

3. The mask structure according to claim 1, characterized in that: A side of the isolation portion close to the first transfer portion has a plurality of first notches arranged at intervals; and / or Another side of the isolation portion close to the second transfer portion has a plurality of second notches arranged at intervals.

4. The mask structure according to claim 3, characterized in that: One side of the isolation part close to the first transfer part has a plurality of first notches arranged at intervals; the other side of the isolation part close to the second transfer part has a plurality of second notches arranged at intervals; wherein The adjacent first notches and the second notches are completely staggered in the width direction of the first transfer portion and the second transfer portion; or, The adjacent first notches and the second notches are only partially overlapped in the width direction of the first transfer portion and the second transfer portion.

5. The mask structure according to claim 1, characterized in that: The isolation portion comprises: Body part; a plurality of first protrusions disposed at intervals on one side of the main body close to the first transfer portion, and / or a plurality of second protrusions disposed at intervals on another side of the main body close to the second transfer portion; Wherein, when the isolation portion has the first protrusion and the second protrusion, the first protrusion and the second protrusion are staggered in the width direction of the first transfer portion and the second transfer portion; or, the first protrusion and the second protrusion are alternately and partially overlapped in the width direction of the first transfer portion and the second transfer portion.

6. The mask structure according to claim 1, characterized in that: The isolation portion includes a plurality of first sub-isolation portions arranged at intervals and a plurality of second sub-isolation portions arranged at intervals, the patterns of the first sub-isolation portions and the second sub-isolation portions are mirror images of each other, and the edge of the first sub-isolation portion close to the second sub-isolation portion only partially overlaps with the edge of the second sub-isolation portion close to the first sub-isolation portion.

7. The mask structure according to claim 1, characterized in that: Also includes: A third transfer part, the third transfer part comprising: A first extension portion and a second extension portion are arranged to cross each other, wherein a connection between the first extension portion and the second extension portion has an opening, and the opening is located on a reverse extension line of an angle bisector of an inner angle formed by the first extension portion and the second extension portion; Among them, the width of the first extension portion along the first direction is the first width, and the width of the second extension portion along the second direction is the second width; the width of the opening along the first direction is 1 / 20 to 1 / 10 of the first width; the width of the opening along the second direction is 1 / 20 to 1 / 10 of the second width.

8. The mask structure according to claim 7, characterized in that: Also includes: Fourth Transfer Department; Along the width direction of the fourth transfer portion, a plurality of third protrusions are provided on the first side of the fourth transfer portion, and the bottoms of adjacent third protrusions are connected to each other; wherein, the width of the fourth transfer portion is less than or equal to 3 microns, and the spacing between the tops of two adjacent third protrusions is 0.5 to 1.5 times the width of the fourth transfer portion.

9. The mask structure according to claim 8, characterized in that: Along the width direction of the fourth transfer portion, a second side of the fourth transfer portion has a plurality of fourth protrusions, wherein the second side is arranged opposite to the first side, and the plurality of fourth protrusions are symmetrically arranged with the plurality of third protrusions; Wherein, the distance between the top ends of the symmetrically arranged third protrusion and the fourth protrusion is 1.2 to 1.6 times the width of the fourth transfer portion.

10. A method for manufacturing a circuit trace, characterized in that: include: Providing a substrate, wherein a surface of the substrate is covered with a conductive layer; Covering the surface of the conductive layer away from the substrate with a photoresist layer; Using the mask as claimed in any one of claims 1 to 9 to expose the photoresist layer to form the patterned photoresist layer; Using the patterned photoresist layer as a mask, etching the conductive layer so that the conductive layer forms a pattern corresponding to the transfer portion; as well as, The photoresist layer is removed.

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