Pollution monitoring system and method for semiconductor manufacturing facility

Abstract

The invention relates to a pollution monitoring system and method for a semiconductor manufacturing facility. The method comprises the following steps: conveying a gas sample of at least one area to a first pollutant detection module and a second pollutant detection module; the first pollutant detection module measures parameters related to the pollution severity of a first pollutant in the gas sample, and the second pollutant detection module measures parameters related to the pollution severity of a second pollutant in the gas sample; the first pollutant and the second pollutant are different types of pollutants; and according to the measurement results of the first pollutant detection module and the second pollutant detection module, the machine table located in a standard exceeding area is shut down when the first pollutant exceeds the standard, and the machine table located in the standard exceeding area is shut down when the second pollutant exceeds the standard. According to the invention, the machine table in the standard exceeding area can be automatically stopped when the pollutants exceed the standard, and the influence of product defects caused by the pollutant exceeding the standard is reduced.

Description

Technical Field

[0001] The present application relates to semiconductor manufacturing, and in particular to a pollution monitoring system for semiconductor manufacturing facilities, and also to a pollution monitoring method for semiconductor manufacturing facilities. Background Art

[0002] Semiconductor devices are extremely susceptible to various contaminants during production, including particles, metal ions, chemicals, bacteria, etc.

[0003] Exemplarily, the particles in the air of a wafer factory (Fab) workshop can be monitored by an air particle monitoring system, and the ion concentration (such as fluoride ion, chloride ion, sulfate ion, phosphate ion, nitrate ion, nitrite ion, bromide ion, ammonium ion concentration, etc.) in the air of the Fab workshop can be monitored by an air ion monitoring system.

[0004] Traditional air particle monitoring systems and air ion monitoring systems have a low degree of automation. Therefore, when environmental parameters in the workshop are abnormal, it is easy for the machines in that area to fail to respond in a timely manner. Summary of the invention

[0005] Based on this, it is necessary to provide a pollution monitoring system and method for semiconductor manufacturing facilities that can respond promptly when abnormal workshop environmental parameters occur.

[0006] A pollution monitoring system for a semiconductor manufacturing facility comprises: a sampling module for collecting gas samples from at least one area in the semiconductor manufacturing facility; a first pollutant detection module connected to the sampling module and used to measure parameters related to the pollution severity of a first pollutant in the gas sample; a second pollutant detection module connected to the sampling module and used to measure parameters related to the pollution severity of a second pollutant in the gas sample; a control module electrically connected to the first pollutant detection module and the second pollutant detection module and used to send a shutdown signal for a machine located in the exceeding area when the first pollutant exceeds the standard, and to send a shutdown signal for a machine located in the exceeding area when the second pollutant exceeds the standard; wherein the first pollutant and the second pollutant are different types of pollutants.

[0007] The pollution monitoring system of the above-mentioned semiconductor manufacturing facility sends a shutdown signal to the machine in a certain area of ​​the semiconductor manufacturing facility when the pollutants in that area exceed the standard, thereby being able to automatically shut down the machines in the exceeding area when the pollutants exceed the standard, thereby reducing the impact of product defects caused by excessive pollutants.

[0008] In one embodiment, the sampling module includes: multiple sampling ports, each sampling port is arranged near a corresponding machine; a sampling tube connected to each of the sampling ports; the first pollutant detection module and the second pollutant detection module are connected to the sampling tube; the control module is used to send a shutdown signal to the machine corresponding to the sampling port where the first pollutant exceeds the standard when the first pollutant exceeds the standard, and to send a shutdown signal to the machine corresponding to the sampling port where the second pollutant exceeds the standard when the second pollutant exceeds the standard.

[0009] In one of the embodiments, the first pollutant detection module is an air particle detection module.

[0010] In one embodiment, the second pollutant detection module is an air ion detection module.

[0011] In one embodiment, the first contaminant detection module includes a laser particle counter.

[0012] In one embodiment, the second contaminant detection module includes an ion spectrometer.

[0013] In one embodiment, the material of the sampling tube includes fusible polytetrafluoroethylene.

[0014] In one embodiment, the number of the sampling tubes is greater than one, each of the sampling tubes is connected to at least one sampling port, and at least some of the sampling tubes are connected to both the first pollutant detection module and the second pollutant detection module.

[0015] In one embodiment, the number of each sampling port is bound to the number of the machine adjacent to the sampling port; the control module is used to shut down the corresponding bound machine according to the number of the sampling port from which the first pollutant that exceeds the standard comes when the first pollutant exceeds the standard; and to shut down the corresponding bound machine according to the number of the sampling port from which the second pollutant that exceeds the standard comes when the second pollutant exceeds the standard.

[0016] In one of the embodiments, the parameter related to the pollution severity of the first pollutant is the particle count.

[0017] In one of the embodiments, the parameter related to the pollution severity of the second pollutant is the concentration of pollutant ions.

[0018] A pollution monitoring method for a semiconductor manufacturing facility comprises: collecting gas samples from at least one area in the semiconductor manufacturing facility; measuring parameters related to the pollution severity of a first pollutant in the gas sample; measuring parameters related to the pollution severity of a second pollutant in the gas sample; sending a shutdown signal for a machine located in the exceeding area when the first pollutant exceeds the standard, and sending a shutdown signal for a machine located in the exceeding area when the second pollutant exceeds the standard; wherein the first pollutant and the second pollutant are different types of pollutants.

[0019] The pollution monitoring method for semiconductor manufacturing facilities described above automatically shuts down the machines in a certain area of ​​the semiconductor manufacturing facility when the pollutants in that area exceed the standard, thereby reducing the impact of product defects caused by the excessive pollutants.

[0020] In one embodiment, the collecting of gas samples from at least one area in a semiconductor manufacturing facility includes: collecting the gas samples entering each of the sampling ports through a sampling tube connected to the multiple sampling ports; sending a shutdown signal to a machine located in the exceeding area when the first pollutant exceeds the standard, and sending a shutdown signal to a machine located in the exceeding area when the second pollutant exceeds the standard, includes: when the first pollutant exceeds the standard, sending a shutdown signal to a machine corresponding to the sampling port from which the exceeding first pollutant comes, and when the second pollutant exceeds the standard, sending a shutdown signal to a machine corresponding to the sampling port from which the exceeding second pollutant comes.

[0021] In one embodiment, the method also includes the step of virtually binding the number of each sampling port with the number of a machine adjacent to the sampling port; shutting down the machine located in the exceeding area when the first pollutant exceeds the standard, and shutting down the machine located in the exceeding area when the second pollutant exceeds the standard, is to shut down the corresponding bound machine according to the number of the sampling port from which the gas sample exceeding the standard comes.

[0022] In one of the embodiments, the parameter related to the pollution severity of the first pollutant is the particle count.

[0023] In one of the embodiments, the parameter related to the pollution severity of the second pollutant is the concentration of pollutant ions.

[0024] In one embodiment, the material of the sampling tube includes fusible polytetrafluoroethylene. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed inventions, the embodiments and / or examples currently described, and the best modes of these inventions currently understood.

[0026] Figure 1 is a structural block diagram of an exemplary air particle monitoring system and an air ion monitoring system in the related art;

[0027] Figure 2 is a schematic diagram of the structure of a pollution monitoring system for semiconductor manufacturing facilities in one embodiment of the present application;

[0028] Figure 3 This is the test data chart of air particle detection;

[0029] Figure 4 This is the test data chart of air ion detection;

[0030] Figure 5 is a flow chart of a contamination monitoring method for a semiconductor manufacturing facility in one embodiment of the present application;

[0031] Figure 6 It is a core workflow diagram of the PAMC system in one embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0034] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0035] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0036] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present invention. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0037] In the related art, the exemplary air particle monitoring system 10 and the air ion monitoring system 20 are independent of each other, such as Figure 1As shown. The sampling tubes of the air particle monitoring system 10 and the sampling tubes of the air ion monitoring system 20 must be laid separately in the Fab's workshop. And after the data output of the particle monitoring module / ion monitoring module, it is necessary to manually judge whether the pollutant value exceeds the standard, and the machine corresponding to the exceeded value, and further manually notify the process group corresponding to the machine to perform machine control (such as shutdown, etc.). The degree of automation is low, the test results cannot be linked to the Fab's production system (such as the manufacturing execution system MES), and the feedback timeliness is poor.

[0038] The present application proposes a pollution monitoring system for semiconductor manufacturing facilities, which can shut down the production machines in the corresponding areas of the semiconductor manufacturing facilities in time when abnormal workshop environmental parameters occur. The pollution monitoring system for semiconductor manufacturing facilities includes: a sampling module, which is used to collect gas samples from at least one area in the semiconductor manufacturing facility; a first pollutant detection module, which is connected to the sampling module, and is used to measure the parameters related to the pollution severity of the first pollutant on the gas sample; a second pollutant detection module, which is connected to the sampling module, and is used to measure the parameters related to the pollution severity of the second pollutant on the gas sample; a control module, which is electrically connected to the first pollutant detection module and the second pollutant detection module, and is used to send a shutdown signal for the machines located in the exceeding area when the first pollutant exceeds the standard, and send a shutdown signal for the machines located in the exceeding area when the second pollutant exceeds the standard; wherein the first pollutant and the second pollutant are different types of pollutants.

[0039] Semiconductor manufacturing facilities refer to facilities for manufacturing semiconductors. Exemplarily, the semiconductor manufacturing facility is a semiconductor manufacturing workshop, and the semiconductor manufacturing facility includes at least one machine. These machines can be, for example, photolithography machines, etching machines, deposition machines, etc. The manufacturing process of each machine can be the same or different, and the embodiments of the present application are not limited to this.

[0040] The machine is located in the aforementioned areas in the semiconductor manufacturing facility. The purpose of collecting gas samples in at least one area is to monitor the pollution of the ambient gas around the machine. Therefore, collecting gas samples in one area means collecting gas samples that can represent the pollution of the ambient gas in which a machine (or more than one machine) is located. Therefore, the gas collected should be close to the corresponding machine. The distance between the collection location and the machine can be set by the technician according to actual needs.

[0041] The first pollutant exceeding the standard means that the parameter related to the pollution severity of the first pollutant does not meet the first normal index, and the second pollutant exceeding the standard means that the parameter related to the pollution severity of the second pollutant does not meet the second normal index. The first normal index and the second normal index can be indicators commonly used in the industry or indicators manually determined by the technicians themselves.

[0042] The pollution monitoring system of the above-mentioned semiconductor manufacturing facility sends a shutdown signal to the machine in a certain area of ​​the semiconductor manufacturing facility when the pollutants in that area exceed the standard, thereby being able to automatically shut down the machines in the exceeding area when the pollutants exceed the standard, thereby reducing the impact of product defects caused by excessive pollutants.

[0043] Figure 2 It is a structural diagram of a pollution monitoring system for a semiconductor manufacturing facility in an embodiment of the present application. The pollution monitoring system for a semiconductor manufacturing facility includes a sampling port 112, a sampling tube 110, a first pollutant detection module 122, a second pollutant detection module 124 and a control module 130. The sampling tube 110 is connected to the sampling port 112. Each sampling port 112 is arranged near a machine (i.e., a machine corresponding to the sampling port 112) so that the gas sample entering the sampling tube 110 through the sampling port 112 can represent the pollutant situation in the area where the corresponding machine is located. The first pollutant detection module 122 is connected to the sampling tube 110 for measuring parameters related to the severity of pollution of the first pollutant. The second pollutant detection module 124 is also connected to the sampling tube 110 for measuring parameters related to the severity of pollution of the second pollutant. The first pollutant and the second pollutant are different types of pollutants, that is, the first pollutant and the second pollutant need to be measured using different types of measuring equipment. The control module 130 is electrically connected to the first pollutant detection module 122 and the second pollutant detection module 124, and is used to send a shutdown signal to the machine corresponding to the sampling port 112 from which the first pollutant that exceeds the standard comes when the first pollutant measured by the first pollutant detection module 122 exceeds the standard, and to send a shutdown signal to the machine corresponding to the sampling port 112 from which the second pollutant that exceeds the standard comes when the second pollutant measured by the second pollutant detection module 124 exceeds the standard. The control module 130 can be connected to the production system of the workshop, so as to send a shutdown signal to the production system, and then the production system automatically sends a shutdown command to the corresponding production machine to achieve automatic shutdown.

[0044] Figure 2 The pollution monitoring system of the semiconductor manufacturing facility shown in the figure shares a sampling tube 110 with the first pollutant detection module 122 and the second pollutant detection module 124 corresponding to the same machine (i.e., the first pollutant detection module 122 and the second pollutant detection module 124 that detect the air at the same machine), thereby reducing the amount of construction work when laying the sampling tube 110.

[0045] In one embodiment of the present application, the control module 130 is further used to push the measurement results of the first pollutant detection module 122 and the second pollutant detection module 124 to the responsible engineer after data integration. Exemplarily, the engineer has a corresponding terminal device, which is connected to the control module 130 by wire or wirelessly, and the control module 130 sends the measurement results of the first pollutant detection module 122 and the second pollutant detection module 124 to the terminal device by wire or wirelessly.

[0046] In one embodiment of the present application, a pollution monitoring system for a semiconductor manufacturing facility includes a plurality of sampling ports 112 and a plurality of sampling tubes 110, each sampling tube 110 being connected to at least one sampling port 112. Each sampling port 112 is configured to correspond to an adjacent machine. The shutdown signal sent by the control module 130 is a shutdown signal of the machine corresponding to the sampling port 112. Some or all of the sampling tubes 110 are connected to both the first pollutant detection module 122 and the second pollutant detection module 124, that is, the first pollutant detection module 122 and the second pollutant detection module 124 share the sampling tube 110 for air sampling.

[0047] Figure 2 The three machines are shown to correspond to the sampling port 112, the sampling tube 110, the first pollutant detection module 122 and the second pollutant detection module 124. Figure 2 In the illustrated embodiment, each first pollutant detection module 122 and second pollutant detection module 124 are connected to a corresponding sampling tube 110; in other embodiments, each first pollutant detection module 122 and second pollutant detection module 124 may also be connected to more than one sampling tube 110, and a valve or similar mechanism may be used to control which sampling tube 110 is currently connected. The number of the sampling port 112 may be virtually bound to the number of the adjacent machine, so that the machine (number) that needs to be shut down can be located according to which number of the sampling port 112 the air sample with excessive pollutants comes from, and the located machine is then controlled to shut down.

[0048] In one embodiment of the present application, the first pollutant detection module 122 is an air particle detection module, and the second pollutant detection module 124 is an air ion detection module. The pollution monitoring system of the semiconductor manufacturing facility is a PAMC (Particle Airborne Modular Contamination) system. The first pollutant detection module 122 is used to measure the number of particles in the air sample, and the second pollutant detection module 124 is used to measure the concentration of pollutant ions in the air sample.

[0049] In one embodiment of the present application, the air particle detection module includes a laser particle counter. Further, the air particle detection module may also include a pump and a sampling converter. The pump is used to draw air near the corresponding sampling port 112 into the sampling tube 110 and transport it to the measuring device (such as a laser particle counter) in the air particle detection module.

[0050] In one embodiment of the present application, the air ion detection module includes an ion spectrometer. Further, the air ion detection module may also include a pump and a sampling converter. The pump is used to draw the air near the corresponding sampling port 112 into the sampling tube 110 and transport it to the measuring device (e.g., ion spectrometer) in the air ion detection module. The first pollutant detection module 122 and the second pollutant detection module 124 may share a pump.

[0051] In one embodiment of the present application, the material of the sampling tube 110 is PFA (Perfluoroalkoxy). Since the air particle detection module and the air ion detection module share the sampling tube 110, the sampling tube 110 connected to the air particle detection module is made of PFA plastic, which is different from the exemplary solution that the sampling tube uses a fiber tube made of antistatic material.

[0052] In summary, in one embodiment of the present application, the PAMC system uses a sampling tube 110 made of PFA material to integrate the sampling modes of air particle and air ion detection, thereby achieving seamless integration of air particle and air ion monitoring functions, and can automatically send instructions to the production system, which in turn automatically sends instructions to the pre-virtual bound production machines to achieve automatic shutdown and reduce the impact of excessive particles / contamination ions on product yield.

[0053] by Figure 2 Taking the PAMC system shown as an example, assuming that the sampling port 112 near the machine 3 automatically takes samples, the gas sample reaches the corresponding first pollutant detection module 122 and the second pollutant detection module 124 through the sampling tube 110 connected to the sampling port 112, and after air particle detection and air ion detection, the air particle detection result exceeds the control line (SPEC), the control module 130 sends a shutdown signal to the production system, and the production system automatically sends a shutdown command to the machine 3 to achieve automatic shutdown. Figure 3 This is the test data chart of air particle detection. Figure 4 This is the test data chart of air ion detection. Figure 3 One of the data points exceeds the control line (SPEC), so the corresponding machine is shut down. The core workflow of the PAMC system can be found in Figure 6 :

[0054] S610, sampling.

[0055] Through the sampling port 112 and the sampling tube 110 , the gas sample of the area where the machine to be monitored in the semiconductor manufacturing facility is located is transported to the air particle detection module and the air ion detection module.

[0056] S622, the air particle detection module data exceeds the standard.

[0057] If the air particle detection result of the air particle detection module exceeds the control line, the process goes to step S632.

[0058] S632, lock the machine corresponding to the sampling.

[0059] According to which sampling port 112 the excessive air sample comes from, the machine corresponding to the sampling port 112 is locked.

[0060] S642, the manufacturing execution system triggers a shutdown command.

[0061] The production system of the workshop, specifically the manufacturing execution system (MES), triggers a shutdown command for the machine locked in step S632.

[0062] S652, integrated data is pushed to the responsible engineer.

[0063] In one embodiment of the present application, the engineer is equipped with a terminal device, which is connected to the control module 130 via wired or wireless means. The control module 130 sends the detection results of the first pollutant detection module 122 (the air particle detection module in this embodiment) to the terminal device via wired or wireless means.

[0064] S624, the air ion detection module data exceeds the standard.

[0065] If the air ion detection result of the air ion detection module exceeds the control line, the process goes to step S634.

[0066] S634, lock the machine corresponding to the sampling.

[0067] According to which sampling port 112 the excessive air sample comes from, the machine corresponding to the sampling port 112 is locked.

[0068] S644, the manufacturing execution system triggers a shutdown command.

[0069] The production system of the workshop, specifically the manufacturing execution system, triggers the shutdown command of the machine locked in step S634.

[0070] S654, integrated data is pushed to the responsible engineer.

[0071] In one embodiment of the present application, the engineer is equipped with a terminal device, which is connected to the control module 130 via wired or wireless means. The control module 130 sends the detection results of the second pollutant detection module 124 (the air ion detection module in this embodiment) to the terminal device via wired or wireless means.

[0072] The present application accordingly proposes a contamination monitoring method for semiconductor manufacturing facilities. Figure 5 : is a flow chart of a contamination monitoring method for a semiconductor manufacturing facility in an embodiment of the present application, comprising the following steps:

[0073] S510, collecting a gas sample from at least one area in a semiconductor manufacturing facility.

[0074] In one embodiment of the present application, a sampling tube connected to multiple sampling ports is used to collect gas samples entering each sampling port. Figure 2 In the illustrated embodiment, the gas sample entering from the sampling port 112 is transported to the first pollutant detection module 122 and the second pollutant detection module 124 through the sampling tube 110 connected to the sampling port 112. That is, the first pollutant detection module 122 and the second pollutant detection module 124 share a sampling tube 110, integrating the sampling modes of air particle and air ion detection to achieve seamless integration of air particle and air ion monitoring functions. Each sampling port 112 is arranged near a machine (i.e., the machine corresponding to the sampling port 112) so that the gas sample entering the sampling tube 110 through the sampling port 112 can represent the pollutant situation in the area where the corresponding machine is located.

[0075] S522, measuring parameters related to the pollution severity of the first pollutant in the gas sample.

[0076] In one embodiment of the present application, a parameter related to the pollution severity of the first pollutant in the gas sample is measured by the first pollutant detection module 122. In one embodiment of the present application, the first pollutant detection module 122 is an air particle detection module, which is used to measure the number of particles in the air sample.

[0077] In one embodiment of the present application, the air particle detection module includes a laser particle counter. Further, the air particle detection module may also include a pump and a sampling converter. The pump is used to draw air near the corresponding sampling port 112 into the sampling tube 110 and transport it to the measuring device (such as a laser particle counter) in the air particle detection module.

[0078] S524, measuring parameters related to the pollution severity of the second pollutant in the gas sample.

[0079] In one embodiment of the present application, a parameter related to the pollution severity of the second pollutant in the gas sample is measured by the second pollutant detection module 124. In one embodiment of the present application, the second pollutant detection module 124 is an air ion detection module, which is used to measure the concentration of pollutant ions in the air sample.

[0080] In one embodiment of the present application, the air ion detection module includes an ion spectrometer. Further, the air ion detection module may also include a pump and a sampling converter, etc. The pump is used to draw air near the corresponding sampling port 112 into the sampling tube 110 and transport it to the measuring device (e.g., ion spectrometer) in the air ion detection module.

[0081] S532, when the first pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding-standard area.

[0082] In one embodiment of the present application, step S532 is to send a shutdown signal to the machine corresponding to the sampling port from which the first pollutant exceeding the standard comes. In one embodiment of the present application, the first pollutant exceeding the standard means that the number of particles in the gas sample exceeds the control line.

[0083] S534, when the second pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding-standard area.

[0084] In one embodiment of the present application, step S534 is to send a shutdown signal to the machine corresponding to the sampling port from which the second pollutant exceeding the standard comes. In one embodiment of the present application, the second pollutant exceeding the standard refers to whether the concentration of pollutant ions in the gas sample exceeds the control line.

[0085] The above-mentioned pollution monitoring method for semiconductor manufacturing facilities automatically shuts down the machines in a certain area of ​​the semiconductor manufacturing facility when the pollutants exceed the standard, thereby reducing the impact of product defects caused by the excessive pollutants. Furthermore, the first pollutant detection module 122 and the second pollutant detection module 124 corresponding to the same machine share a sampling tube 110, thereby reducing the amount of construction work when laying the sampling tube 110. When the pollutants in a certain area of ​​the workshop exceed the standard, the machines in the area are automatically shut down to reduce the impact of product defects caused by the excessive pollutants.

[0086] In one embodiment of the present application, after step S532 and step S534, the step of integrating the measurement results of the first pollutant detection module 122 and the second pollutant detection module 124 and pushing the results to the responsible engineer is also included.

[0087] In one embodiment of the present application, a pollution monitoring system for a semiconductor manufacturing facility includes a plurality of sampling ports 112 and a plurality of sampling tubes 110, and each sampling tube 110 is connected to at least one sampling port 112. In one embodiment of the present application, a pollution monitoring method for a semiconductor manufacturing facility also includes a step of virtually binding the number of each sampling port 112 with the number of a machine in the area where the sampling port 112 is located. Steps S532 and S534 shut down the machine virtually bound to the sampling port 112 from which the excessive gas sample comes from, based on the number of the sampling port 112 from which the excessive gas sample comes. That is, when the first pollutant detection module 122 and the second pollutant detection module 124 detect that the corresponding pollutant exceeds the standard, the sampling port 112 from which the excessive gas sample comes is first located, and then the machine virtually bound to the sampling port 112 is locked based on the number of the sampling port 112, and shutdown processing is performed.

[0088] In one embodiment of the present application, the sampling tube 110 is made of fusible polytetrafluoroethylene (Perfluoroalkoxy, PFA).

[0089] The pollution monitoring system for semiconductor manufacturing facilities and the pollution monitoring method for semiconductor manufacturing facilities belong to the same inventive concept. For matters not specifically described in the pollution monitoring method for semiconductor manufacturing facilities, reference may be made to the pollution monitoring system for semiconductor manufacturing facilities described above.

[0090] It should be understood that, although the various steps in the flowchart of the present application are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the present application may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0091] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0092] The present application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps in the method described in any of the above embodiments are implemented.

[0093] The present application also provides a computer device, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the steps in the method described in any of the above embodiments are implemented.

[0094] The present application also provides a computer program product, including a computer program, which implements the steps of the method described in any of the above embodiments when executed by a processor.

[0095] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0096] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0097] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A contamination monitoring system for a semiconductor manufacturing facility, characterized in that: include: A sampling module, used to collect gas samples from at least one area in a semiconductor manufacturing facility; a first pollutant detection module, connected to the sampling module, and configured to measure a parameter related to the pollution severity of the first pollutant on the gas sample; a second pollutant detection module, connected to the sampling module, and configured to measure parameters related to the pollution severity of the second pollutant on the gas sample; a control module, electrically connected to the first pollutant detection module and the second pollutant detection module, configured to send a shutdown signal to a machine located in an exceeding area when the first pollutant exceeds the standard, and to send a shutdown signal to a machine located in an exceeding area when the second pollutant exceeds the standard; Wherein, the first pollutant and the second pollutant are different types of pollutants.

2. The contamination monitoring system for semiconductor manufacturing facilities according to claim 1, characterized in that: The sampling module comprises: Multiple sampling ports, each of which is set close to the corresponding machine; A sampling tube connected to each of the sampling ports; Wherein, the first pollutant detection module and the second pollutant detection module are connected to the sampling tube; The control module is used to send a shutdown signal to the machine corresponding to the sampling port from which the first pollutant exceeds the standard when the first pollutant exceeds the standard, and to send a shutdown signal to the machine corresponding to the sampling port from which the second pollutant exceeds the standard when the second pollutant exceeds the standard.

3. The contamination monitoring system for semiconductor manufacturing facilities according to claim 2, characterized in that: The number of the sampling tubes is greater than one, each of the sampling tubes is connected to at least one sampling port, and at least some of the sampling tubes are connected to both the first pollutant detection module and the second pollutant detection module.

4. The contamination monitoring system for semiconductor manufacturing facilities according to claim 2, characterized in that: The number of each sampling port is bound to the number of the machine adjacent to the sampling port; The control module is used to shut down the corresponding bound machine according to the number of the sampling port from which the first pollutant that exceeds the standard comes when the first pollutant exceeds the standard; And when the second pollutant exceeds the standard, the corresponding bound machine is shut down according to the number of the sampling port from which the second pollutant that exceeds the standard comes.

5. The contamination monitoring system for semiconductor manufacturing facilities according to claim 2, characterized in that: The material of the sampling tube includes fusible polytetrafluoroethylene.

6. The contamination monitoring system for semiconductor manufacturing facilities according to any one of claims 1 to 5, characterized in that: The first pollutant detection module is an air particle detection module, and the second pollutant detection module is an air ion detection module.

7. The contamination monitoring system for semiconductor manufacturing facilities according to claim 6, characterized in that: The first pollutant detection module includes a laser particle counter, and the second pollutant detection module includes an ion spectrometer.

8. The contamination monitoring system for semiconductor manufacturing facilities according to claim 6, characterized in that: The parameter related to the pollution severity of the first pollutant is the number of particles, and the parameter related to the pollution severity of the second pollutant is the concentration of pollutant ions.

9. A method for monitoring contamination in a semiconductor manufacturing facility, comprising: collecting gas samples from at least one area of ​​a semiconductor manufacturing facility; measuring a parameter related to the severity of contamination of a first pollutant in the gas sample; measuring a parameter related to the contamination severity of a second pollutant in the gas sample; When the first pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding area; and when the second pollutant exceeds the standard, a shutdown signal is sent to the machines located in the exceeding area; Wherein, the first pollutant and the second pollutant are different types of pollutants.

10. The contamination monitoring method for semiconductor manufacturing facilities according to claim 9, characterized in that: The collecting of gas samples from at least one area in a semiconductor manufacturing facility comprises: Collect the gas samples entering from each sampling port through a sampling tube connected to the plurality of sampling ports; The step of sending a shutdown signal to a machine located in an area where the first pollutant exceeds the standard, and sending a shutdown signal to a machine located in an area where the second pollutant exceeds the standard, comprises: When the first pollutant exceeds the standard, a shutdown signal is sent to the machine corresponding to the sampling port where the first pollutant exceeds the standard, and when the second pollutant exceeds the standard, a shutdown signal is sent to the machine corresponding to the sampling port where the second pollutant exceeds the standard.

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