Heat treatment apparatus and heat treatment method of semiconductor workpiece

Abstract

The embodiment of the invention provides heat treatment equipment and a heat treatment method of a semiconductor workpiece. The heat treatment equipment comprises a reaction cavity used for containing a workpiece to be subjected to heat treatment; the top gas diffusion plate is positioned below the gas guide part of the top gas inlet device, and the top gas diffusion plate comprises a plurality of through holes; the top gas inlet fence is located above the top gas diffusion plate, and the top gas inlet fence comprises an opening; wherein the top gas inlet fence, the top gas diffusion plate and the inner wall of the reaction cavity define a gas diffusion cavity, the opening is aligned with the second end of the gas guide part, and first process gas conveyed through the gas inlet port enters the first end of the gas guide part and flows to the gas diffusion cavity through the second end of the gas guide part; and then the workpiece is reached through a plurality of through holes. According to the heat treatment equipment disclosed by the invention, the first process gas can be uniformly discharged onto the workpiece, so that the uniformity of heat treatment of the workpiece is improved.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and more particularly, to a thermal processing apparatus and a thermal processing method for a semiconductor workpiece. Background Art

[0002] In a wafer processing process, such as a heat treatment process, whether the gas is discharged uniformly determines the wafer heat treatment effect. For example, if the gas is discharged unevenly onto the wafer, the uniformity of the wafer thermal reaction is affected. Summary of the invention

[0003] In a first aspect of the present disclosure, a heat treatment apparatus is provided. The heat treatment equipment comprises: a reaction chamber for accommodating a workpiece to be heat treated; an air inlet port and an exhaust port, wherein the air inlet port is connected to a first gas source to deliver a first process gas into the reaction chamber to perform heat treatment on the workpiece, and the exhaust port is used to exhaust the first process gas out of the reaction chamber; a top air inlet device, which is arranged at the air inlet side of the upper chamber of the reaction chamber and connected to the air inlet port, the top air inlet device comprises a gas guide portion, a first end of the gas guide portion is connected to the air inlet port, and a second end of the gas guide portion is located in the reaction chamber to deliver the first process gas to the upper chamber; a top gas diffusion plate, which is located below the gas guide portion of the top air inlet device, and the top gas diffusion plate comprises a plurality of through holes; a top air inlet enclosure, which is located above the top gas diffusion plate, and the top air inlet enclosure comprises an opening; wherein the top air inlet enclosure, the top gas diffusion plate and the inner wall of the reaction chamber define a gas diffusion chamber, the opening is aligned with the second end of the gas guide portion, and the first process gas delivered through the air inlet port enters the first end of the gas guide portion and flows to the gas diffusion chamber through the second end of the gas guide portion, and then reaches the workpiece through the plurality of through holes.

[0004] According to the heat treatment equipment disclosed in the present invention, the first process gas can be uniformly discharged onto the workpiece, thereby improving the uniformity of heat treatment of the workpiece.

[0005] In some embodiments, the top gas diffuser plate has a diffusion region, the diffusion region corresponds to the lower opening of the top air intake enclosure, and at least part of the through holes are located in the diffusion region.

[0006] In some embodiments, the top air intake enclosure is a cylindrical enclosure, and a side of the cylindrical enclosure close to the air intake port has an opening.

[0007] In some embodiments, a portion of the gas guiding portion extends through the opening into the gas diffusion chamber.

[0008] In some embodiments, the plurality of through holes of the top gas diffusion plate are evenly distributed.

[0009] In some embodiments, the heat treatment equipment also includes a side air intake device, which includes a gas supply part; the gas supply inlet port of the gas supply part is connected to the second gas source, and the gas supply outlet port of the gas supply part is configured to extend toward the edge of the processing surface of the workpiece to transport the second process gas supplied by the second gas source to the processing surface of the workpiece for heat treatment.

[0010] In a second aspect of the present disclosure, a method for heat treating a semiconductor workpiece is provided, comprising:

[0011] Allowing the first process gas to enter the heat treatment equipment through a gas inlet port of the heat treatment equipment;

[0012] directing an incoming first process gas into a reaction chamber of a thermal treatment apparatus;

[0013] Concentrating the first process gas entering the reaction chamber in the gas diffusion chamber of the heat treatment equipment;

[0014] Diffusion treatment is performed on the first process gas in the gas diffusion chamber and the first process gas is transported to the upper chamber of the reaction chamber for heat treatment of the semiconductor workpiece;

[0015] The first process gas after the heat treatment is discharged from the reaction chamber through the exhaust port of the heat treatment equipment.

[0016] According to the heat treatment method disclosed in the present invention, the first process gas can be uniformly discharged onto the workpiece, thereby improving the uniformity of heat treatment of the workpiece.

[0017] In some embodiments, directing the incoming first process gas into a reaction chamber of a thermal processing apparatus includes:

[0018] A top air inlet device is arranged between the air inlet port and the gas diffusion chamber of the heat treatment equipment. The top air inlet device includes a gas guiding part, so that the first process gas entering the air inlet port is transported to the gas diffusion chamber through the gas guiding part of the top air inlet device.

[0019] In some embodiments, concentrating the first process gas entering the reaction chamber in a gas diffusion chamber of a thermal processing apparatus comprises:

[0020] A top air intake enclosure is arranged in the upper chamber of the reaction chamber, and the enclosed area of ​​the top air intake enclosure corresponds to the area of ​​the processing surface of the semiconductor workpiece.

[0021] In some embodiments, diffusing the first process gas in the gas diffusion chamber and delivering the first process gas to the upper chamber of the reaction chamber includes:

[0022] A top gas diffusion plate including a plurality of through holes is arranged in the upper chamber of the reaction chamber, and the distribution of the first process gas in the gas diffusion chamber is adjusted through the plurality of through holes.

[0023] In some embodiments, the plurality of through holes of the top gas diffuser plate are located in a region defined by the top air intake enclosure.

[0024] In some embodiments, the plurality of through holes of the top gas diffusion plate are evenly distributed.

[0025] In some embodiments, the gas diffusion chamber is defined by the top air inlet enclosure, the top gas diffusion plate, and the inner wall of the reaction chamber.

[0026] In some embodiments, the top air intake enclosure includes an opening through which a portion of a gas guiding portion of a top air intake device of the thermal processing apparatus extends into the gas diffusion chamber.

[0027] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0029] Figure 1 is a schematic structural diagram of a heat treatment device according to an embodiment of the present disclosure;

[0030] Figure 2 is a schematic structural diagram of a heat treatment device according to an embodiment of the present disclosure;

[0031] Figure 3 is a schematic diagram of a heat treatment method according to an embodiment of the present disclosure.

[0032] Description of reference numerals:

[0033] 100: Heat treatment equipment;

[0034] 101: reaction chamber;

[0035] 1011: Artifacts;

[0036] 1012: top wall;

[0037] 102: air intake port;

[0038] 103: Exhaust port;

[0039] 104: gas guide part;

[0040] 105: top gas diffusion plate;

[0041] 1051: through hole;

[0042] 106: top air intake enclosure;

[0043] 1061: gas diffusion chamber;

[0044] 1062: Speak. DETAILED DESCRIPTION

[0045] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0046] like Figure 1 , Figure 2 As shown, an embodiment of the present disclosure provides a heat treatment device 100. The heat treatment device 100 includes: a reaction chamber 101, which is used to accommodate a workpiece 1011 to be heat treated; an inlet port 102 and an exhaust port 103, wherein the inlet port 102 is connected to a first gas source to deliver a first process gas to the reaction chamber 101 to perform heat treatment on the workpiece 1011, and the exhaust port 103 is used to exhaust the first process gas from the reaction chamber 101; a top inlet device, which is arranged on the inlet side of the upper chamber of the reaction chamber 101 and connected to the inlet port 102, and the top inlet device includes a gas guide portion 104, a first end of the gas guide portion 104 is connected to the inlet port 102, and a second end of the gas guide portion 104 is located at the reverse side. The top gas diffusion plate 105 is located below the gas guide portion 104 of the top gas inlet device, and the top gas diffusion plate 105 includes a plurality of through holes 1051; the top gas inlet enclosure 106 is located above the top gas diffusion plate 105, and the top gas inlet enclosure 106 includes an opening 1062; wherein the top gas inlet enclosure 106, the top gas diffusion plate 105 and the inner wall of the reaction chamber 101 define a gas diffusion chamber 1061, and the opening 1062 is aligned with the second end of the gas guide portion 104 to introduce the first process gas flowing out from the second end into the gas diffusion chamber 1061.

[0047] The heat treatment device 100 is a device for applying heat energy to a workpiece 1011 (such as a wafer) during the semiconductor manufacturing process. The reaction chamber 101 is a portion of the device that accommodates the workpiece 1011. The workpiece 1011 is placed in the reaction chamber 101 and undergoes heat treatment. The first gas source may be a device for providing a first process gas, and the first gas source is usually disposed at an inlet port 102 of the reaction chamber 101. The inlet port 102 of the heat treatment device 100 can be understood as being arranged at Figure 1 , Figure 2 The outlet port of the heat treatment device 100 can be understood as being arranged on the left side. Figure 1 , Figure 2 on the right side.

[0048] The top gas inlet device is located at the gas inlet side of the upper chamber of the reaction chamber 101 and is connected to the gas inlet port 102. It can be understood that the heat treatment equipment 100 in this embodiment adopts the top gas inlet form. When the heat treatment process is implemented, the first process gas provided by the first gas source is discharged from the left side of the reaction chamber 101 through the top gas inlet device to the upper chamber of the reaction chamber 101, and flows out from the right side of the reaction chamber 101 after heat treatment.

[0049] In some embodiments, the reaction chamber 101 further includes a lower chamber. It is understood that the upper chamber can be used to perform heat treatment on the workpiece 1011, and the lower chamber can also be used to perform heat treatment on the workpiece 1011 or can be used to perform movement of the workpiece 1011. For example, the lower chamber can have an air flotation device to achieve floating and rotation of the workpiece 1011 by blowing air to the workpiece 1011 or the workpiece 1011 tray. In still other embodiments, the lower chamber and the upper chamber can be interconnected, that is, the first process gas in the upper chamber can diffuse into the lower chamber.

[0050] The position of the gas guide portion 104 relative to the reaction chamber 101 can be adjusted. In some embodiments, Figure 2 The example in which the gas guide part 104 is completely located in the reaction chamber 101 is shown. The first end of the gas guide part 104 is connected to the gas inlet port 102. The gas inlet port 102 can be connected to the gas inlet port 102 through Figure 2 The flange protruding from the left side of the reaction chamber 101 is connected to the first gas source. In some embodiments, the gas guide portion 104 may be made of quartz.

[0051] The top gas diffuser plate 105 is Figure 1 , Figure 2 In the structure shown by the middle number, the top gas diffusion plate 105 is located in the upper chamber area of ​​the reaction chamber 101. The multiple through holes 1051 on the top gas diffusion plate 105 can be through holes 1051 of the same specifications and sizes to improve the uniformity of the first process gas reaching the workpiece 1011. In other embodiments, the top gas diffusion plate 105 can also be provided with through holes 1051 of different specifications. For example, the through holes 1051 on the periphery of the top gas diffusion plate 105 are arranged more densely, so that the gas concentration reaching the periphery of the workpiece 1011 is high to meet the requirements of different processes.

[0052] In some embodiments, the arrangement of the plurality of through holes 1051 on the top gas diffusion plate 105 may be adjusted. For example, the plurality of through holes 1051 may be evenly distributed to improve the uniformity of the first process gas reaching the workpiece 1011 .

[0053] The top air intake enclosure 106 may be located between the top gas diffusion plate 105 and the inner wall of the reaction chamber 101. For example, the top air intake enclosure 106 is located between the top gas diffusion plate 105 and the top wall 1012 of the reaction chamber 101, and a gas diffusion chamber 1061 is formed between the top air intake enclosure 106, the top gas diffusion plate 105 and the top wall 1012. The gas guide portion 104 is a structure for guiding gas to the gas diffusion chamber 1061, and the gas guide portion 104 may be connected to the gas diffusion chamber 1061 in a variety of ways. For example, the top air intake enclosure 106 is provided with an opening 1062, and the second end of the gas guide portion 104 is aligned with the opening 1062 (e.g., Figure 1 , Figure 2 Alternatively, a portion of the gas guide portion 104 extends through the opening 1062 into the gas diffusion chamber 1061, so that the first process gas flowing out from the second end of the gas guide portion 104 flows into the gas diffusion chamber 1061, thereby preventing the first process gas from directly flowing into the reaction chamber 101 and affecting the gas utilization rate.

[0054] The shape of the opening 1062 of the top air intake enclosure 106 can be adapted to the shape of the second end of the gas guide portion 104. For example, the second end of the gas guide portion 104 is a roughly rectangular gas outlet, and the opening 1062 can be a rectangular opening, and the rectangular opening is slightly larger than the gas outlet, so as to facilitate the second end of the gas guide portion 104 to be aligned with the opening 1062 or to extend into the gas diffusion chamber 1061 through the opening 1062.

[0055] In some embodiments, the top air intake enclosure 106 may be a cylindrical enclosure, and the opening 1062 may be substantially located at a side of the cylindrical enclosure close to the air intake port 102. Figure 2 As shown, an embodiment is provided in which the opening 1062 is offset to a side of the cylindrical enclosure close to the intake port 102 .

[0056] In some embodiments, the top gas diffusion plate 105 can be located at the lower opening of the cylindrical enclosure, and the upper opening of the cylindrical enclosure can be connected to the top wall 1012 of the reaction chamber 101, thereby forming a gas diffusion chamber 1061 between the top gas diffusion plate 105, the top wall 1012 and the inner wall of the cylindrical enclosure.

[0057] The height position of the opening 1062 relative to the top air intake enclosure 106 can be adjusted. For example, the opening 1062 can be located in the upper area of ​​the top air intake enclosure 106, that is, the area close to the top wall 1012 of the reaction chamber 101; or the opening 1062 can be located in the middle area of ​​the top air intake enclosure 106.

[0058] like Figure 1 As shown, when heat treatment is performed, the workpiece 1011 is usually arranged below the top gas diffusion plate 105 and at a position opposite to the top gas diffusion plate 105. When heat treatment is performed, the first process gas delivered by the gas inlet port 102 enters the first end of the gas guide portion 104 and flows to the gas diffusion chamber 1061 through the second end of the gas guide portion 104. After the first process gas fills the gas diffusion chamber 1061, it reaches the processing surface of the workpiece 1011 through the plurality of through holes 1051 to participate in heat treatment, so that the first process gas fully contacts the processing surface of the workpiece 1011.

[0059] In some embodiments, the volume of the gas diffusion chamber 1061 can be configured to be suitable for temporarily storing the first process gas to slow down the flow rate of the first process gas, so that the first process gas is discharged to the processing surface of the workpiece 1011 at a lower flow rate to participate in the heat treatment, thereby improving the heat treatment effect. The gas diffusion chamber 1061 also helps to make the first process gas pass through each through hole 1051 uniformly, avoiding uneven gas flow in multiple through holes 1051, which affects the uniformity of the heat treatment of the workpiece 1011.

[0060] In some embodiments, the multiple through holes 1051 on the top gas diffusion plate 105 are located in the area defined by the top air intake enclosure 106, that is, the multiple through holes 1051 on the top gas diffusion plate 105 are located in the area surrounded by the top air intake enclosure 106. When heat treatment is implemented, the first process gas in the gas diffusion chamber 1061 is discharged to the treatment surface of the workpiece 1011 through the multiple through holes 1051 defined by the top air intake enclosure 106 to participate in the heat treatment, so that the first process gas fully contacts the treatment surface of the workpiece 1011, thereby improving the uniformity of the heat treatment of the workpiece 1011.

[0061] In some embodiments, at least part of the plurality of through holes 1051 are located in a region defined by the top air intake enclosure 106 .

[0062] In some embodiments, the heat treatment equipment also includes a side air intake device, which includes a gas supply part; the gas supply inlet port 102 of the gas supply part is connected to the second gas source, and the gas supply outlet port of the gas supply part is configured to extend toward the edge of the processing surface of the workpiece 1011 to transport the second process gas supplied by the second gas source to the processing surface of the workpiece 1011 for heat treatment.

[0063] The second gas source may be a device for providing a second process gas. The second gas source may be arranged Figure 1 , Figure 2 The left side, top side, and bottom side of the reaction chamber 101. The second process gas may be the same as the first process gas or a combination of one or more components of the first process gas.

[0064] The gas volume of the second process gas may be the same as or different from the gas volume of the first process gas. For example, in some embodiments, the consumption of the first process gas is greater than the consumption of the second process gas when the workpiece 1011 is heat treated. Therefore, the gas volume of the first process gas is adjusted to be greater than the gas volume of the second process gas to improve the heat treatment effect of the workpiece 1011.

[0065] The heat treatment effect of the workpiece 1011 can be further improved by providing the gas replenishment part. The position of the gas outlet end of the gas replenishment part relative to the reaction chamber 101 can be adjusted. For example, in some embodiments, the gas outlet end of the gas replenishment part is positioned at Figure 1 , Figure 2 The midpoint between the gas inlet side and the gas outlet side. With such an arrangement, the gas discharged from the gas outlet covers substantially the same area on the left side of the workpiece 1011 and the right side of the workpiece 1011, thereby improving the uniformity of the heat treatment of the workpiece 1011.

[0066] like Figure 3 As shown, an embodiment of the present disclosure provides a method for heat treating a semiconductor workpiece, comprising:

[0067] S101: allowing a first process gas to enter the heat treatment equipment through a gas inlet port of the heat treatment equipment;

[0068] S102: directing the incoming first process gas into a reaction chamber of a heat treatment device;

[0069] S103: gathering the first process gas entering the reaction chamber in the gas diffusion chamber of the heat treatment equipment;

[0070] S104: diffusing the first process gas in the gas diffusion chamber and transporting it to the upper chamber of the reaction chamber for heat treatment of the semiconductor workpiece;

[0071] S105: The first process gas after the heat treatment is discharged from the reaction chamber through the exhaust port of the heat treatment equipment.

[0072] According to the heat treatment method disclosed in the present invention, the first process gas can be uniformly discharged onto the workpiece, thereby improving the uniformity of heat treatment of the workpiece.

[0073] In some embodiments, S102 includes:

[0074] A top air inlet device is arranged between the air inlet port and the gas diffusion chamber of the heat treatment equipment. The top air inlet device includes a gas guiding part, so that the first process gas entering the air inlet port is transported to the gas diffusion chamber through the gas guiding part of the top air inlet device.

[0075] In some embodiments, S103 includes:

[0076] A top air intake enclosure is arranged in the upper chamber of the reaction chamber, and the enclosed area of ​​the top air intake enclosure corresponds to the area of ​​the processing surface of the semiconductor workpiece.

[0077] It can be understood that in the embodiment, the top air intake enclosure is arranged relative to the semiconductor workpiece, and the enclosed area of ​​the top air intake enclosure is greater than or equal to the area of ​​the processing surface of the semiconductor workpiece.

[0078] In some embodiments, S104 includes:

[0079] A top gas diffusion plate including a plurality of through holes is arranged in the upper chamber of the reaction chamber, and the distribution of the first process gas in the gas diffusion chamber is adjusted through the plurality of through holes.

[0080] In some embodiments, the plurality of through holes of the top gas diffuser plate are located in an area defined by the top air intake enclosure.

[0081] In some embodiments, the plurality of through holes of the top gas diffusion plate are evenly distributed.

[0082] In some embodiments, the gas diffusion chamber is defined by the top air inlet enclosure, the top gas diffusion plate, and the inner wall of the reaction chamber.

[0083] In some embodiments, the top air intake enclosure includes an opening through which a portion of a gas guiding portion of a top air intake device of the thermal processing apparatus extends into the gas diffusion chamber.

[0084] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0085] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0086] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0087] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0088] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0089] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A heat treatment device comprising: A reaction chamber, used to accommodate a workpiece to be heat treated; an inlet port and an exhaust port, wherein the inlet port is connected to a first gas source to deliver a first process gas into the reaction chamber to perform heat treatment on the workpiece, and the exhaust port is used to exhaust the first process gas out of the reaction chamber; A top gas inlet device is disposed at the gas inlet side of the upper chamber of the reaction chamber and connected to the gas inlet port, the top gas inlet device comprises a gas guide portion, a first end of the gas guide portion is connected to the gas inlet port, and a second end of the gas guide portion is located in the reaction chamber to transport the first process gas to the upper chamber; a top gas diffusion plate, located below the gas guiding portion of the top air intake device, the top gas diffusion plate comprising a plurality of through holes; a top air intake enclosure, located above the top gas diffuser plate, the top air intake enclosure comprising an opening; The top air inlet enclosure, the top gas diffusion plate and the inner wall of the reaction chamber define a gas diffusion chamber, the opening is aligned with the second end of the gas guide portion, the first process gas delivered through the air inlet port enters the first end of the gas guide portion and flows to the gas diffusion chamber through the second end of the gas guide portion, and then reaches the workpiece through the multiple through holes.

2. The heat treatment equipment according to claim 1, wherein: The top gas diffuser plate has a diffusion area, the diffusion area corresponds to the lower opening of the top air intake enclosure, and at least part of the through holes are located in the diffusion area.

3. The heat treatment equipment according to claim 1, wherein: The top air intake enclosure is a cylindrical enclosure, and a side of the cylindrical enclosure close to the air intake port has the opening.

4. The heat treatment equipment according to claim 1, wherein: A portion of the gas guide portion extends through the opening into the gas diffusion chamber.

5. The heat treatment equipment according to claim 1, wherein: The plurality of through holes of the top gas diffusion plate are evenly distributed.

6. The heat treatment equipment according to any one of claims 1 to 5, wherein: The heat treatment equipment also includes a side air intake device; The side air intake device includes a gas supply part, a gas supply inlet port of the gas supply part is connected to a second gas source, and a gas supply outlet port of the gas supply part is configured to extend toward the edge of the processing surface of the workpiece to transport the second process gas supplied by the second gas source to the processing surface of the workpiece to perform the heat treatment.

7. A method for heat treatment of a semiconductor workpiece, comprising: Allowing a first process gas to enter the heat treatment equipment through a gas inlet port of the heat treatment equipment; directing an incoming first process gas into a reaction chamber of the thermal treatment apparatus; Concentrating the first process gas entering the reaction chamber in the gas diffusion chamber of the thermal treatment equipment; The first process gas in the gas diffusion chamber is diffused and transported to the upper chamber of the reaction chamber for heat treatment of the semiconductor workpiece.

8. The heat treatment method according to claim 7, wherein: The step of directing the incoming first process gas into the reaction chamber of the thermal treatment device comprises: A top air inlet device is arranged between the air inlet port and the gas diffusion chamber of the heat treatment equipment, and the top air inlet device includes a gas guiding part, so that the first process gas entering the air inlet port is transported to the gas diffusion chamber through the gas guiding part of the top air inlet device.

9. The heat treatment method according to claim 7, wherein: The step of surrounding and gathering the first process gas entering the reaction chamber in the gas diffusion chamber of the heat treatment equipment comprises: A top air intake enclosure is arranged in the upper chamber of the reaction chamber, and the enclosed area of ​​the top air intake enclosure corresponds to the area of ​​the processing surface of the semiconductor workpiece.

10. The heat treatment method according to claim 9, wherein: The step of diffusing the first process gas in the gas diffusion chamber and transporting the first process gas to the upper chamber of the reaction chamber comprises: A top gas diffusion plate including a plurality of through holes is arranged in the upper chamber of the reaction chamber, and the distribution of the first process gas in the gas diffusion chamber is adjusted through the plurality of through holes.

11. The heat treatment method according to claim 10, wherein: The plurality of through holes of the top gas diffuser plate are located in a region defined by the top air intake enclosure.

12. The heat treatment method according to claim 11, wherein: The plurality of through holes of the top gas diffusion plate are evenly distributed.

13. The heat treatment method according to any one of claims 7 to 12, wherein: The gas diffusion chamber is defined by a top air inlet enclosure, a top gas diffusion plate and an inner wall of the reaction chamber.

14. The heat treatment method according to claim 9, wherein: The top air intake enclosure includes an opening through which a portion of a gas guiding portion of a top air intake device of the thermal processing apparatus extends into the gas diffusion chamber.

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