Reaction chamber and semiconductor process equipment

Abstract

The invention provides a reaction chamber and semiconductor process equipment, and relates to the technical field of semiconductor manufacturing. The reaction chamber comprises a chamber base body which is provided with an air inlet side and an air outlet side which are oppositely arranged in the longitudinal direction, and a middle side is connected between the air inlet side and the air outlet side; the chamber base body is provided with a first sub-chamber and a second sub-chamber; a first surface of a semiconductor workpiece located in the chamber base body is located in the first sub-chamber, a second surface of the semiconductor workpiece is located in the second sub-chamber, and the second surface is located below the first surface; the gas inlet device is connected with the gas inlet side of the chamber base body and used for supplying process gas to at least one of the first sub-chamber and the second sub-chamber; the side air supplementing device is connected with the air inlet side of the cavity base body; the side air supply device is provided with a side air supply outlet, the side air supply outlet corresponds to the middle of the middle side in the longitudinal direction, and process gas flowing out of the side air supply outlet is used for flowing to the area, close to the edge, of the semiconductor workpiece.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a reaction chamber and semiconductor process equipment. Background Art

[0002] Wafer heat treatment is a key step in the semiconductor wafer manufacturing process. Wafer heat treatment is usually carried out in a closed reaction chamber, where the wafer can be heated and process gases can be introduced into the reaction chamber to cause a chemical reaction in the wafer. How to reasonably design the structure of the reaction chamber is one of the current research topics. Summary of the invention

[0003] The embodiment of the present disclosure provides a reaction chamber, comprising: a chamber base, having an air inlet side and an air outlet side arranged opposite to each other in the longitudinal direction, and an intermediate side is connected between the air inlet side and the air outlet side; the chamber base has a first sub-chamber and a second sub-chamber; the first surface of a semiconductor workpiece located in the chamber base is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface of the semiconductor workpiece is arranged opposite to the first surface, and the second surface is located below the first surface; an air inlet device, connected to the air inlet side of the chamber base, and the air inlet device is used to supply process gas to at least one of the first sub-chamber and the second sub-chamber; a side air supply device, connected to the air inlet side of the chamber base; the side air supply device has a side air supply outlet, and the side air supply outlet is arranged corresponding to the middle part of the intermediate side in the longitudinal direction, and the process gas flowing out of the side air supply outlet is used to flow to the area of ​​the semiconductor workpiece close to the edge.

[0004] In some embodiments, in the reaction chamber, a transverse center plane of a semiconductor workpiece located in the chamber base passes through the side gas supplement outlet.

[0005] In some embodiments, a transverse center plane located in the chamber base coincides with a transverse center plane of the lateral supplementary gas outlet along the transverse direction.

[0006] In some embodiments, the side gas supply outlet is located above the semiconductor workpiece, and the process gas flowing out of the side gas supply outlet is used to supply gas to a region close to an edge of the first surface of the semiconductor workpiece.

[0007] In some embodiments, the side air supply device includes: a side air supply pipeline, the side air supply pipeline has a side air supply inlet, a guide portion and a side air supply outlet; the side air supply inlet corresponds to the air inlet side of the chamber base; the guide portion is connected between the side air supply inlet and the side air supply outlet, and the guide portion is bent.

[0008] In some embodiments, the guide portion includes:

[0009] In some embodiments, the guide portion includes: a first connecting section, extending longitudinally and connected to the side gas supply inlet; a first bending section, connected to the first connecting section, and bent relative to the first connecting section in a direction away from the semiconductor workpiece; a second connecting section, connected to the first bending section, and extending in a direction away from the first connecting section; a second bending section, connected to the second connecting section, and bent in a direction toward the semiconductor workpiece.

[0010] In some embodiments, the second connecting segment is parallel to the first connecting segment, and the first bending segment and the second bending segment are respectively perpendicular to the second connecting segment.

[0011] In some embodiments, the lateral air supply pipeline has an expansion section, the axial direction of the expansion section is parallel to the lateral direction; the expansion section gradually expands in the direction toward the semiconductor workpiece; the expansion section is connected to the lateral air supply outlet on the side facing the semiconductor workpiece.

[0012] In some embodiments, the air intake device includes: a side air intake plate and a side diffusion plate, the side air intake plate is connected to the air intake side of the chamber base, and the side diffusion plate is located in the chamber base and is used to diffuse the process gas flowing from the side air intake plate into the chamber base.

[0013] In some embodiments, the reaction chamber further includes: a partition plate, wherein the partition plate is located in the chamber base and is used to separate the chamber base into a first sub-chamber and a second sub-chamber.

[0014] The presently disclosed embodiment also provides a semiconductor process equipment, comprising: a reaction chamber as described in any of the above items; a first mass flow controller, used to control the process gas entering the air intake device; a second mass flow controller, used to control the process gas entering the side air supply device; a main controller, electrically connected to the first mass flow controller and the second mass flow controller respectively; a detection device, used to detect the thickness of the functional film layer in the semiconductor workpiece and / or the size of the holes in the semiconductor workpiece; a data processing unit, electrically connected to the detection device and the main controller respectively; wherein, when the data processing unit determines that the semiconductor workpiece needs to be reprocessed according to the detection result of the detection device, the data processing unit sends a reprocessing instruction to the main controller; the main controller sends a gas supply instruction to the second mass flow controller based on the reprocessing instruction; the second mass flow controller controls the process gas entering the side air supply device according to the gas supply instruction.

[0015] In some embodiments, the first mass flow controller is used to control the process gas entering the second sub-chamber of the reaction chamber from the gas inlet device to prevent the process gas entering the first sub-chamber of the reaction chamber from flowing to the second surface of the semiconductor workpiece.

[0016] The reaction chamber provided in this embodiment is helpful to improve the uniformity of heat treatment of semiconductor workpieces.

[0017] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in accordance with the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0019] Figure 1 A schematic diagram showing the structure of a reaction chamber according to an embodiment of the present disclosure is shown;

[0020] Figure 2 A cross-sectional schematic diagram showing a reaction chamber according to an embodiment of the present disclosure;

[0021] Figure 3 A schematic cross-sectional view of a reaction chamber according to an embodiment of the present disclosure is shown;

[0022] Figure 4 A structural block diagram of a semiconductor process equipment according to an embodiment of the present disclosure is shown.

[0023] Explanation of the reference numerals: 100-chamber base; 100a-inlet side; 100b-outlet side; 100c-middle side; 110-first sub-chamber; 120-second sub-chamber; 130-partition plate; 140-support mechanism; 200-semiconductor workpiece; 300-inlet device; 310-side inlet plate; 400-side air supply device; 410-side air supply pipeline; 411-side air supply inlet; 412-guide portion; 412a-first connecting section; 412b-first bending section; 412c-second connecting section; 412d-second bending section; 412e-expansion section; 413-side air supply outlet; 510-first mass flow controller; 520-second mass flow controller; 530-master controller; 540-data processing unit; 550-detection device. DETAILED DESCRIPTION

[0024] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0025] Please refer to Figure 1 and Figure 2 The present embodiment provides a reaction chamber, comprising: a chamber base 100, an air inlet device 300 and a side air supply device 400. The chamber base 100 has an air inlet side 100a and an air outlet side 100b arranged opposite to each other, and the air inlet device 300 and the side air supply device 400 are connected to the air inlet side 100a of the chamber base 100. The process gas enters the chamber base 100 from the air inlet device 300 or the side air supply device 400 and is discharged from the air outlet side 100b.

[0026] The chamber base 100 is in a columnar shape, for example, the chamber base 100 is in a prism shape or a cylindrical shape. For ease of description, this embodiment will take the chamber base 100 in a quadrangular prism shape as an example, take the axial direction of the chamber base 100 as the vertical direction, take the gravity direction as the bottom, take the direction from the air inlet side 100a to the air outlet side 100b as the longitudinal direction, and take the direction perpendicular to the vertical direction and the longitudinal direction as the transverse direction as an example for description.

[0027] The chamber base 100 has an upper portion and a lower portion opposite to each other, and the chamber base 100 also has a side portion connected between the upper portion and the lower portion. The air inlet side 100a and the air outlet side 100b correspond to two of the opposite side portions, respectively. An intermediate side 100c is also connected between the air inlet side 100a and the air outlet side 100b, and the intermediate side 100c has two and is arranged opposite to each other.

[0028] During the heat treatment process, the process gas is introduced from the gas inlet side 100a (eg, Figure 1 The left side in the figure) enters the chamber base 100 and enters the chamber base 100 from the opposite outlet side 100b (e.g. Figure 1 The gas flows outwardly from the right side of the reaction chamber, thereby forming a stable gas flow field in the reaction chamber, and improving the thermal treatment effect of the semiconductor workpiece 200 in the stable gas flow field.

[0029] A support mechanism 140 is disposed in the chamber base 100. The support mechanism 140 is a structure in the reaction chamber for supporting a semiconductor workpiece 200 (e.g., a wafer). In some examples, the support mechanism 140 may include a quartz tray, which may be connected to ejector pins, and the number of ejector pins may be adjusted according to process requirements. For example, when the workpiece size is large, a larger number of ejector pins may be used to improve the stability of the semiconductor workpiece 200 in the reaction chamber.

[0030] A heating device is also provided in the chamber base 100. The heating device is a device for providing heat treatment energy. There may be two heating devices, which are spaced apart vertically, one of which is located above the semiconductor workpiece 200 to heat the first surface of the semiconductor workpiece 200, and the other is located below the semiconductor workpiece 200 to heat the second surface of the semiconductor workpiece 200, thereby improving the uniformity of the heat treatment result. In other examples, there may also be one heating device, which may be located above or below the semiconductor workpiece 200, and may be adjusted according to process requirements.

[0031] The chamber base 100 has a first sub-chamber 110 and a second sub-chamber 120; the first surface of the semiconductor workpiece 200 (i.e., the upper surface of the semiconductor workpiece 200) is located in the first sub-chamber 110, and the second surface of the semiconductor workpiece 200 (i.e., the lower surface of the semiconductor workpiece 200) is located in the second sub-chamber 120; the second surface of the semiconductor workpiece 200 is arranged opposite to the first surface, and the second surface is located below the first surface.

[0032] Optionally, the reaction chamber may further include: a partition plate 130, the partition plate 130 is located in the chamber base 100, and is used to separate the chamber base 100 into a relatively independent first sub-chamber 110 and a second sub-chamber 120. The first sub-chamber 110 is located above the second sub-chamber 120. In this way, the first surface of the semiconductor workpiece 200 located in the first sub-chamber 110 and the second surface located in the second sub-chamber 120 are respectively located in relatively independent spaces to undergo heat treatment, which is conducive to improving the heat treatment efficiency of the workpiece.

[0033] Among them, the partition plate 130 can be in a plate shape. The shape of the partition plate 130 can be adapted to the shape of the internal space of the chamber base 100. For example, when the cross-section of the internal space of the chamber base 100 is rectangular, the partition plate 130 is also rectangular. The partition plate 130 has an opening adapted to the shape of the semiconductor workpiece 200, and the semiconductor workpiece 200 is arranged corresponding to the opening. For example, when the semiconductor workpiece 200 is circular, the opening is also circular. The center of the opening of the partition plate 130 can be coaxial with the center of the semiconductor workpiece 200, and the radius of the opening is slightly larger than the radius of the semiconductor workpiece 200, so as to form a gap between the opening and the semiconductor workpiece 200 to allow the semiconductor workpiece 200 to rotate. The partition plate 130 can be made of transparent quartz material.

[0034] The air inlet device 300 may be connected to the middle of the air inlet side 100a of the chamber substrate 100. In the vertical direction, the air inlet device 300 is connected to the middle of the air inlet side 100a of the chamber substrate 100, so that the air inlet device 300 is arranged closer to the semiconductor workpiece 200, which is conducive to simplifying the structure of the air inlet device 300. In the horizontal direction, the air inlet device 300 is connected to the middle of the air inlet side 100a of the chamber substrate 100, which is conducive to the correspondence between the air inlet device 300 and the semiconductor workpiece 200, and improves the utilization rate of the process gas entering from the air inlet device 300.

[0035] The air inlet device 300 may include a side air inlet plate 310 and a side diffusion plate. The side air inlet plate 310 is connected to the air inlet side 100a of the chamber base 100 . The side diffusion plate is used to uniformly diffuse the process gas entering the chamber base 100 from the side air inlet plate 310 .

[0036] In some examples, the side air inlet plate 310 includes an air inlet plate substrate, and the air inlet plate substrate is provided with a first air inlet channel and a second air inlet channel, and the first process gas entering from the first air inlet channel can flow to the first sub-chamber 110, and the second process gas entering from the second air inlet channel can flow to the second sub-chamber 120. The first process gas entering the first sub-chamber 110 flows to the first surface of the semiconductor workpiece 200; and the second process gas flowing to the second sub-chamber 120 can be used to prevent the first process gas entering the first sub-chamber 110 from flowing to the second surface of the semiconductor workpiece 200.

[0037] The side air inlet plate 310 also includes a plug-in portion, which is connected to the inner side of the air inlet plate base body facing the central axis of the chamber base body 100; the plug-in portion is inserted into the mounting hole opened in the side wall of the air inlet side 100a of the chamber base body 100, and the plug-in portion can be sealed and matched with the mounting hole. The first air inlet channel and the second air inlet channel also extend into the plug-in portion.

[0038] The side diffusion plate is provided with a plurality of air holes, some of which are used to uniformly diffuse the first process gas entering the first sub-chamber 110 from the side air inlet plate 310, and the other part of the air holes are used to uniformly diffuse the second process gas entering the second sub-chamber 120 from the side air inlet plate 310. The first process gas flows through the first surface of the semiconductor workpiece 200, and the second process gas flows through the second surface of the semiconductor workpiece 200. The components of the first process gas and the second process gas may be different or may be different, and may be specifically set according to actual needs.

[0039] In other examples, the second process gas entering from the side air inlet plate 310 and the side diffuser plate can only flow to the second sub-chamber 120. In addition, the side air inlet plate also includes a top air inlet member and a top diffuser plate, at least part of the top air inlet member is located in the first sub-chamber 110, and the part of the top air inlet member close to the top gas outlet port is located above the top diffuser plate and the semiconductor workpiece 200, and the top diffuser plate is also located above the semiconductor workpiece 200, so that the first process gas can enter the first sub-chamber 110 from the top air inlet member, and flow to the first surface of the semiconductor workpiece 200 after being diffused by the top diffuser plate.

[0040] It can be understood that the specific structure of the air intake device 300 can be set according to actual needs, and this embodiment is only used as an example.

[0041] The side gas supply device 400 is connected to the gas inlet side 100a of the chamber base 100. The side gas supply device 400 has a side gas supply inlet 411 and a side gas supply outlet 413. The side gas supply inlet 411 is a port in the side gas supply device 400 connected to the corresponding gas source. The side gas supply outlet 413 is a port in the side gas supply device 400 for the process gas to flow out. The side gas supply outlet 413 is arranged in the middle of the longitudinal direction corresponding to the middle side 100c, and the process gas flowing out of the side gas supply outlet 413 is used to flow to the area near the edge of the semiconductor workpiece 200. Among them, for the convenience of description, the process gas flowing out of the side gas supply outlet 413 is taken as the third process gas as an example, and the specific composition of the third process gas can be set according to actual needs. In this way, the third process gas discharged from the side gas supply outlet 413 has substantially the same coverage area on the left and right sides of the semiconductor workpiece 200, which is conducive to improving the uniformity of the heat treatment of the semiconductor workpiece 200.

[0042] In the reaction chamber of this embodiment, through the above arrangement, the process gas discharged from the side gas supply outlet 413 of the side gas supply device 400 has substantially the same coverage area on opposite sides of the transverse center plane of the semiconductor workpiece 200, which is beneficial to improving the uniformity of the heat treatment of the semiconductor workpiece 200.

[0043] Please continue to refer to Figure 1 In some embodiments, the transverse center plane of the semiconductor workpiece 200 in the chamber base 100 passes through the side gas supplement outlet 413. Exemplarily, the transverse center plane of the quartz tray supporting the semiconductor workpiece 200, which is parallel to the transverse direction, passes through the side gas supplement outlet 413, which is conducive to making the transverse center plane of the semiconductor workpiece 200 placed on the tray pass through the side gas supplement outlet 413, thereby ensuring that the third process gas discharged from the side gas supplement outlet 413 covers substantially the same area on the left and right sides of the semiconductor workpiece 200.

[0044] Optionally, the transverse center plane of the quartz tray coincides with the transverse center plane of the side gas supply outlet 413, which helps to make the transverse center plane of the semiconductor workpiece 200 placed on the tray closer to the transverse center plane of the side gas supply outlet 413, and even makes the transverse center plane of the semiconductor workpiece 200 coincide with the transverse center plane of the side gas supply outlet 413.

[0045] In other examples, there may be a preset distance between the transverse center plane of the tray and the transverse center plane of the side gas supply outlet 413 , and the preset distance may be set according to actual needs as long as the transverse center plane of the semiconductor workpiece 200 can be closer to the transverse center plane of the side gas supply outlet 413 .

[0046] Optionally, the side gas replenishment outlet 413 is located above the semiconductor workpiece 200, and the third process gas flowing out of the side gas replenishment outlet 413 is used to replenish gas in the area near the edge of the first surface of the semiconductor workpiece 200, thereby ensuring the treatment effect on the first surface of the semiconductor workpiece 200. The specific composition of the third process gas can be the same as that of the first process gas, or the third process gas includes some components of the first process gas.

[0047] Please refer to Figure 1 and Figure 3 In some embodiments, the side gas supply device 400 includes: a side gas supply pipeline 410, the side gas supply pipeline 410 has a side gas supply inlet 411, a guide portion 412 and a side gas supply outlet 413; the side gas supply inlet 411 corresponds to the air inlet side 100a of the chamber base 100; the guide portion 412 is connected between the side gas supply inlet 411 and the side gas supply outlet 413.

[0048] The corresponding position of the side air inlet 411 and the chamber base 100 can be set according to actual needs. For example, the side air inlet 411 can correspond to the first sub-chamber 110. For another example, the side air inlet 411 can correspond to the connection between the first sub-chamber 110 and the second sub-chamber 120.

[0049] In the transverse direction, the side air supply device 400 can be arranged near the middle of the air intake side 100a, or near the edge of the air intake side 100a. For example, a through hole is opened on the side wall of the first sub-chamber 110 located on the air intake side 100a, and the through hole is arranged near the middle side 100c, and the part of the side air supply pipeline 410 near the side air supply inlet 411 is penetrated in the through hole, so that the side air supply inlet 411 can be located in the area of ​​the air intake side 100a near the edge of the middle side 100c.

[0050] In the vertical direction, the side air supply inlet 411 can be arranged flush with the side air inlet of the side air inlet plate 310, or the side air supply inlet 411 can be arranged lower than the side air inlet, or the side air supply inlet 411 can also be arranged higher than the side air inlet. The side air inlet is a port where the side air inlet plate 310 is connected to a corresponding air source.

[0051] In the horizontal direction, the side air supply inlet 411 and the side air inlet can be staggered. For example, the side air inlet is arranged in the middle of the air inlet side 100a, and the side air supply inlet 411 is arranged relatively close to the edge of the air inlet side 100a to reduce the impact of the side air supply device 400 on other components; wherein the distance between the side air inlet and the side air supply inlet 411 can be set according to the radius of the semiconductor workpiece 200.

[0052] The side gas supply outlet 413 of the side gas supply device 400 may be located in the first sub-chamber 110. In the vertical direction, the side gas supply outlet 413 may be arranged close to the first surface of the semiconductor workpiece 200. For example, the side gas supply outlet 413 of the side gas supply device 400 may be located above the first surface of the semiconductor workpiece 200; wherein the vertical distance between the side gas supply outlet 413 and the first surface of the semiconductor workpiece 200 may be set according to actual needs.

[0053] In the lateral direction, the lateral gas supply outlet 413 of the lateral gas supply device 400 can be arranged close to the first surface of the semiconductor workpiece 200. For example, the lateral gas supply outlet 413 of the lateral gas supply device 400 can be arranged close to the edge of the first surface of the semiconductor workpiece 200 toward one of the middle sides 100c; wherein the lateral spacing between the lateral gas supply outlet 413 and the first surface of the semiconductor workpiece 200 can be set according to actual needs.

[0054] In other examples, when the second sub-chamber 120 needs to be supplemented with gas, the side supplementary gas outlet 413 may also be located in the second sub-chamber 120. When the first sub-chamber 110 and the second sub-chamber 120 need to be supplemented with gas at the same time, the side supplementary gas pipeline 410 may have two, and the two side supplementary gas pipelines 410 correspond to the first sub-chamber 110 and the second sub-chamber 120 respectively; or, the side supplementary gas pipeline 410 is provided with two side supplementary gas outlets 413, and the two side supplementary gas outlets 413 correspond to the first sub-chamber 110 and the second sub-chamber 120 respectively.

[0055] It can be understood that the specific locations of the side air supply inlet 411 and the side air supply outlet 413 of the side air supply device 400 can be set according to actual needs as long as the above functions can be achieved.

[0056] The guide portion 412 is used to guide the third process gas to the area near the edge of the semiconductor workpiece 200 where gas supplement is needed. The shape of the guide portion 412 can be set according to the positions of the side gas supplement inlet 411, the side gas supplement outlet 413 and other components in the chamber base 100.

[0057] In order to facilitate the arrangement of other components in the chamber base 100 and improve the compactness of the structure, the guide portion 412 may be bent so as to avoid other components.

[0058] Exemplarily, the guide portion 412 includes: a first connecting section 412a, a first bending section 412b, a second connecting section 412c, and a second bending section 412d. The first connecting section 412a is connected to the side air supply inlet 411 on the side away from the chamber base 100. The first connecting section 412a extends in the longitudinal direction. The length of the first connecting section 412a can be set according to actual needs. For example, part of the first connecting section 412a can be located in the through hole of the chamber base 100, and part of the first connecting section 412a is located inside the chamber base 100.

[0059] The first bending section 412b is connected to the end of the first connecting section 412a away from the lateral air supply inlet 411, and the first bending section 412b can extend in the lateral direction. The first bending section 412b can be bent relative to the first connecting section 412a in a direction away from the semiconductor workpiece 200, or in other words, the first bending section 412b can be bent relative to the first connecting section 412a in a direction away from the central axis (outward) of the chamber base 100; the end of the first bending section 412b away from the first connecting section 412a can be close to the inner wall of the middle side 100c of the chamber base 100, and the first bending section 412b can also be close to the inner wall of the air inlet side 100a of the chamber base 100, so as to provide space for arranging other components in the chamber base 100.

[0060] The first bending section 412b is connected to the second connecting section 412c at one end away from the first connecting section 412a. The second connecting section 412c extends longitudinally. The second connecting section 412c can extend to a transverse center plane close to the semiconductor workpiece 200 (or the tray). The length of the second connecting section 412c can be set according to actual needs.

[0061] The second connecting section 412c may be connected to an end away from the first bending section 412b with a second bending section 412d, and the second bending section 412d extends in the transverse direction. The second bending section 412d is bent relative to the second connecting section 412c in a direction toward the semiconductor workpiece 200, that is, the second bending section 412d is bent relative to the second connecting section 412c in a direction toward the central axis (inward) of the chamber base 100, and in the horizontal direction, the side gas supplement outlet 413 is arranged close to the edge of the semiconductor workpiece 200, so that the third process gas flowing out of the side gas supplement outlet 413 can flow more to the area close to the edge of the first surface of the semiconductor workpiece 200. The central axis of the second bending section 412d may intersect and be perpendicular to the central axis of the semiconductor workpiece 200, or there is a preset distance between the central axis of the second bending section 412d and the central axis of the semiconductor workpiece 200.

[0062] Optionally, the first connecting segment 412a is arranged in parallel with the second connecting segment 412c, the second bending segment 412d can be arranged in parallel with the first bending segment 412b, and the second bending segment 412d and the first bending segment 412b can be arranged perpendicular to the second connecting segment 412c. Among them, two adjacent segments among the first connecting segment 412a, the second connecting segment 412c, the first bending segment 412b and the second bending segment 412d can be smoothly connected.

[0063] In other examples, at least one of the first bending section 412b and the second bending section 412d can be tilted, that is, at least one of the first bending section 412b and the second bending section 412d has an acute angle with the second connecting section 412c. The specific shapes of the first connecting section 412a, the second connecting section 412c, the first bending section 412b and the second bending section 412d can be set according to actual needs.

[0064] It is understandable that the specific structure of the guide portion 412 is not limited thereto, and the specific number of the connecting segments and the bending segments in the guide portion 412 can be set according to actual needs, and this embodiment is only used as an example. For example, the guide portion 412 can also include a connecting segment and a bending segment, the bending segment is connected to the end of the connecting segment away from the side gas supplement inlet 411, the bending segment extends in the direction toward the semiconductor tool, and the bending segment forms a side gas supplement outlet 413 toward the side of the semiconductor workpiece 200.

[0065] In some examples, the lateral air supply pipeline 410 has an expansion section 412e, the axial direction of the expansion section 412e is parallel to the lateral direction; the expansion section 412e gradually expands in the direction toward the semiconductor workpiece 200; the expansion section 412e is connected to the lateral air supply outlet 413 on the side facing the semiconductor workpiece 200.

[0066] The expansion section 412e can be connected to the second bending section 412d. The expansion section 412e is generally flat. In the longitudinal direction, the expansion section 412e has two spaced edges; in the transverse direction and in the direction toward the semiconductor workpiece 200, the distance between the two edges of the expansion section 412e spaced in the longitudinal direction gradually increases, so that the third process gas flowing out of the side gas supplement outlet 413 can cover more areas of the first surface of the semiconductor workpiece 200.

[0067] The longitudinal dimension of the lateral gas supplement outlet 413 can be set according to actual needs. For example, in the longitudinal direction, the lateral gas supplement outlet 413 can have a preset width, and the ratio between the preset width and the radius of the semiconductor workpiece 200 can be 0.10, 0.11, 0.12, 0.13, 0.14, 0.15, or any two values ​​therebetween.

[0068] Optionally, the side gas supplement outlet 413 may also be arc-shaped, and the curvature of the side gas supplement outlet 413 may be adapted to the curvature of the semiconductor workpiece 200. Alternatively, the side gas supplement outlet 413 may also be straight. The specific shape of the side gas supplement outlet 413 may be set according to actual needs.

[0069] Optionally, the air outlet direction of the side air supply device 400 and the air outlet direction of the side air inlet plate 310 can be arranged perpendicularly, that is, the angle between the air outlet direction of the side air supply device 400 and the air outlet direction of the side air outlet plate is about 9°.

[0070] In some examples, the side gas supply device 400 may also include a gas supply diffuser plate, which is used to diffuse the third process gas flowing out of the side gas supply outlet 413, so as to improve the uniformity of the third process gas discharged from the side gas supply device 400. The gas supply diffuser plate may be a flat plate having pores uniformly distributed in a dot matrix.

[0071] In some embodiments, the reaction chamber may further include an air flotation device to control at least one of the rotation direction, rotation speed and suspension height of the semiconductor workpiece 200 by using the gas flowing out of the air flotation device. At least part of the air flotation device is located in the second sub-chamber 120. Exemplarily, the air flotation device may include a plurality of air flotation blocks, which are located in the second sub-chamber 120, and each of which is connected to the air inlet branch. The gas flowing out of a part of the air flotation blocks acts on the second surface of the semiconductor workpiece 200 to adjust the suspension height of the semiconductor workpiece 200, or to keep the semiconductor workpiece 200 at the current height. The gas flowing out of another part of the air flotation blocks is used to control the rotation direction or rotation speed of the semiconductor workpiece 200; wherein, the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 200 to rotate clockwise, and the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 200 to rotate counterclockwise. By controlling the amount of gas flowing out of the above-mentioned air flotation blocks, the rotation direction or rotation speed can be adjusted.

[0072] The flotation device can be used to achieve flotation control of the semiconductor workpiece 200, which is beneficial to reducing the wear of the semiconductor workpiece 200 and overcoming the problem of uneven temperature of the semiconductor workpiece 200 caused by the existence of cold spots.

[0073] Other structures of the reaction chamber in the above embodiment may adopt various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0074] Please refer to Figure 4 , and continue to refer to Figures 1 to 3 The embodiment of the present disclosure also provides a semiconductor process equipment, including: a reaction chamber in any of the aforementioned embodiments; a first mass flow controller 510, used to control the process gas entering the air intake device 300; a second mass flow controller 520, used to control the process gas entering the side air supply device 400; a main controller 530, electrically connected to the first mass flow controller 510 and the second mass flow controller 520 respectively; a detection device 550, used to detect the thickness of the functional film layer in the semiconductor workpiece 200 and / or the size of the hole in the semiconductor workpiece 200; a data processing unit 540, electrically connected to the detection device 550 and the main controller 530 respectively; wherein, when the data processing unit 540 determines that the semiconductor workpiece 200 needs to be reprocessed according to the detection result of the detection device 550, it sends a reprocessing instruction to the main controller 530; the main controller 530 sends a gas supply instruction to the second mass flow controller 520 based on the reprocessing instruction; the second mass flow controller 520 controls the process gas entering the side air supply device 400 according to the gas supply instruction.

[0075] Among them, the detection device 550 can adopt various technical solutions known to ordinary technicians in this field now and in the future, as long as it can detect the thickness of the functional film layer in the semiconductor workpiece 200 and / or the size of the hole in the semiconductor workpiece 200.

[0076] The data processing unit 540 may be a chip with data processing capability. The data processing unit 540 may be integrated with the main controller 530 or may be independently configured. The data processing unit 540 may determine whether the semiconductor workpiece 200 needs to be reprocessed, such as gas replenishment, based on parameters such as the thickness of the functional film layer in the semiconductor workpiece 200 and / or the size of the holes in the semiconductor workpiece 200 in the detection results. If the data processing unit 540 determines that reprocessing is required based on the detection results, the reprocessing instruction may be sent to the main controller 530; wherein the reprocessing instruction may include a gas replenishment control parameter. After receiving the reprocessing instruction, the main controller 530 determines that the control object is the second mass flow controller 520 according to the reprocessing instruction, and converts the gas replenishment control parameter into a signal recognizable by the second mass flow controller 520, generates a gas replenishment instruction and sends it to the second mass flow controller 520; the second mass flow controller 520 controls the process gas entering the side gas replenishment device 400 according to the gas replenishment instruction, for example, the second mass flow controller 520 controls the amount of gas entering the side gas replenishment device 400, the gas replenishment duration, etc.

[0077] In addition, the semiconductor process equipment may further include diaphragm valves, the number and installation positions of which may be set according to actual needs. The diaphragm valves may be electrically connected to the master controller 530, so that the master controller 530 adjusts the composition of the process gas entering the reaction chamber by controlling the on and off of the diaphragm valves.

[0078] For example, during the gas supply process, the gas supply path can be switched by controlling the corresponding diaphragm valve to adjust the composition of the process gas entering from the side gas supply device 400. For example, the proportion of the catalytic gas component in the process gas entering from the side gas supply device 400 can be increased.

[0079] In one example, the first mass flow controller 510 is used to control the process gas entering the second sub-chamber 120 of the reaction chamber from the gas inlet device 300 to prevent the process gas entering the first sub-chamber 110 of the reaction chamber from flowing to the second surface of the semiconductor workpiece 200 .

[0080] In some examples, the semiconductor process equipment further includes: a third mass flow controller electrically connected to the main controller 530 and configured to control the process gas entering the first sub-chamber 110 of the reaction chamber from the gas inlet device 300 .

[0081] Among them, the gas amount of the process gas entering the second sub-chamber 120 of the reaction chamber can be positively correlated with the gas amount of the process gas entering the first sub-chamber 110 of the reaction chamber to ensure that the process gas entering the second sub-chamber 120 can prevent the process gas entering the first sub-chamber 110 from flowing to the second surface of the semiconductor workpiece 200.

[0082] In addition, for the side gas supply pipeline 410 in the side gas supply device 400, the position of the side gas supply outlet 413 of the side gas supply pipeline 410 is adjustable. The position adjustment process of the side gas supply outlet 413 can be performed before the semiconductor process equipment enters the working state, for example, it can be adjusted in the test stage or the debugging stage. For example, the position of the side gas supply outlet 413 can be adjusted in the horizontal or vertical direction to adjust the relative position of the side gas supply outlet 413 and the semiconductor workpiece 200. For another example, the angle between the gas outlet direction of the side gas supply outlet 413 and the first surface of the semiconductor workpiece 200 can be adjusted.

[0083] Other components of the semiconductor process equipment in the above-mentioned embodiment may adopt various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0084] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0085] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0086] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0087] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0088] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0089] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A reaction chamber, comprising: A chamber base body, comprising an air inlet side and an air outlet side arranged opposite to each other in a longitudinal direction, wherein an intermediate side is connected between the air inlet side and the air outlet side; the chamber base body comprises a first sub-chamber and a second sub-chamber; a first surface of a semiconductor workpiece located in the chamber base body is located in the first sub-chamber, and a second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface of the semiconductor workpiece is arranged opposite to the first surface, and the second surface is located below the first surface; an air inlet device connected to the air inlet side of the chamber substrate, and the air inlet device is used to supply process gas to at least one of the first sub-chamber and the second sub-chamber; A side gas supply device is connected to the air inlet side of the chamber base; the side gas supply device has a side gas supply outlet, and the side gas supply outlet is arranged corresponding to the middle part of the middle side along the longitudinal direction. The process gas flowing out of the side gas supply outlet is used to flow to the area near the edge of the semiconductor workpiece. 2 . The reaction chamber according to claim 1 , wherein a transverse center plane of a semiconductor workpiece located in the chamber base passes through the side gas supplement outlet.

3. The reaction chamber according to claim 2, wherein: The transverse center plane located in the chamber base coincides with the transverse center plane of the lateral air supplement outlet along the transverse direction.

4. The reaction chamber according to claim 2, wherein: The side gas supply outlet is located above the semiconductor workpiece, and the process gas flowing out of the side gas supply outlet is used to supply gas to a region close to an edge of the first surface of the semiconductor workpiece.

5. The reaction chamber according to claim 1, wherein: The side air supply device includes: a side air supply pipeline, the side air supply pipeline has a side air supply inlet, a guide part and a side air supply outlet; the side air supply inlet corresponds to the air inlet side of the chamber base; the guide part is connected between the side air supply inlet and the side air supply outlet, and the guide part is bent.

6. The reaction chamber according to claim 5, wherein: The guide portion comprises: A first connecting section extending longitudinally and communicating with the side air supply inlet; A first bending section connected to the first connecting section and bent relative to the first connecting section in a direction away from the semiconductor workpiece; a second connecting section connected to the first bending section and extending in a direction away from the first connecting section; The second bending section is connected to the second connecting section and is bent in a direction toward the semiconductor workpiece.

7. The reaction chamber according to claim 6, wherein: The second connecting section is parallel to the first connecting section, and the first bending section and the second bending section are respectively perpendicular to the second connecting section.

8. The reaction chamber according to claim 5, wherein: The lateral air supply pipeline has an expansion section, and the axial direction of the expansion section is parallel to the transverse direction; The expansion section gradually expands in a direction toward the semiconductor workpiece; The expansion section is connected to the side of the semiconductor workpiece and is in communication with the side gas supply outlet.

9. The reaction chamber according to claim 1, wherein: The air intake device includes: a side air intake plate and a side diffusion plate, wherein the side air intake plate is connected to the air intake side of the chamber base, and the side diffusion plate is located in the chamber base and is used to diffuse the process gas flowing from the side air intake plate into the chamber base.

10. The reaction chamber according to claim 1, further comprising: A partition plate is located in the chamber base and is used to partition the chamber base into a first sub-chamber and a second sub-chamber.

11. A semiconductor process equipment comprising: The reaction chamber according to any one of claims 1 to 10; a first mass flow controller, for controlling the process gas entering the gas inlet device in the reaction chamber; A second mass flow controller, used for controlling the process gas entering the side gas supply device in the reaction chamber; A main controller, electrically connected to the first mass flow controller and the second mass flow controller respectively; A detection device, used to detect the thickness of the functional film layer in the semiconductor workpiece and / or the size of the hole in the semiconductor workpiece; A data processing unit is electrically connected to the detection device and the master controller respectively; Among them, when the data processing unit determines to reprocess the semiconductor workpiece according to the detection result of the detection device, it sends a reprocessing instruction to the main controller; the main controller sends a gas replenishment instruction to the second mass flow controller based on the reprocessing instruction; the second mass flow controller controls the process gas entering the side gas replenishment device according to the gas replenishment instruction.

12. The semiconductor process equipment according to claim 11, wherein: The first mass flow controller is used to control the process gas entering the second sub-chamber of the reaction chamber from the gas inlet device to prevent the process gas entering the first sub-chamber of the reaction chamber from flowing to the second surface of the semiconductor workpiece.

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