Semiconductor package and method of dissipating heat from semiconductor package

Abstract

Semiconductor packages and methods of forming the same are provided. The semiconductor package includes a substrate having an upper surface and a lower surface, a first integrated circuit device mounted on the upper surface, and a second integrated circuit device mounted on the lower surface. A first thermal diffuser in the form of a vapor chamber (VC) is over the first integrated circuit device. A second thermal diffuser in the form of a vapor chamber is over the second integrated circuit device. A heat transfer member thermally couples the first heat diffuser and the second heat diffuser on both sides of the substrate. The embodiment of the invention also relates to a semiconductor package and a method of dissipating heat from the semiconductor package.

Description

Technical Field

[0001] Embodiments of the present application relate to semiconductor packages and methods of dissipating heat from semiconductor packages. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC development, functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry size (i.e., the smallest component (or line) that can be created using a manufacturing process) has decreased. This shrinking process generally provides benefits by increasing production efficiency and reducing associated costs. Such shrinking has also increased the complexity of processing and manufacturing ICs.

[0003] ICs are typically assembled into packages that are in turn connected to a system board, such as a printed circuit board. During operation, the IC generates heat that raises the temperature of the package. Without removing the heat, thermal impacts may occur on IC performance or reliability as well as packaging material performance or reliability. In some instances, a heat sink may be incorporated into the package to facilitate removal of heat from the IC environment. Summary of the invention

[0004] Some embodiments of the present application provide a semiconductor package, including: a substrate having an upper surface and a lower surface; a plurality of first integrated circuit devices mounted on the upper surface; a plurality of second integrated circuit devices mounted on the lower surface; a first vapor chamber (VC) heat diffuser located above the plurality of first integrated circuit devices; a second vapor chamber heat diffuser located above the plurality of second integrated circuit devices; and a heat transfer member thermally coupling the first vapor chamber heat diffuser and the second vapor chamber heat diffuser.

[0005] Other embodiments of the present application provide a semiconductor package, comprising: a substrate having a first surface and a second surface; a plurality of first package components mounted on the first surface; a plurality of second package components mounted on the second surface; a first vapor chamber (VC) heat diffuser located above the plurality of first package components; and a second vapor chamber heat diffuser located above the plurality of second package components, the second vapor chamber heat diffuser comprising: a main body; and a heat transfer channel extending continuously from the main body to thermally contact the first vapor chamber heat diffuser.

[0006] Still other embodiments of the present application provide a method for dissipating heat from a semiconductor package, comprising: providing a packaging structure comprising a substrate, a plurality of first integrated circuit devices mounted on an upper surface of the substrate, and a plurality of second integrated circuit devices mounted on a lower surface of the substrate; setting a first vapor chamber (VC) heat diffuser to be thermally coupled to the first integrated circuit devices; setting a second vapor chamber heat diffuser to be thermally coupled to the second integrated circuit devices; and using one or more heat transfer channels to thermally couple the first vapor chamber heat diffuser and the second vapor chamber heat diffuser so that thermal energy can be transferred from the second vapor chamber heat diffuser to the first vapor chamber heat diffuser. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the size of the various components may be arbitrarily increased or reduced for clarity of discussion.

[0008] Figure 1 is a vertical cross-sectional view of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0009] Figure 2 is a diagram showing some embodiments of the present invention. Figure 1 0014] A plan view (eg, top view) of an arrangement of a first integrated circuit device and an upper vapor chamber (VC) heat spreader above an upper surface of a substrate in FIG. 5, wherein components beneath the upper VC heat spreader are represented by dashed lines.

[0010] Figure 3 Schematically illustrates a method according to some embodiments Figure 1 The internal structure of the upper VC heat spreader in and the working principle of the upper VC heat spreader during operation.

[0011] Figure 4 is a diagram showing some embodiments of the present invention. Figure 1 0 is a plan view (eg, bottom view) of an arrangement of a second integrated circuit device and a lower VC heat spreader above a lower surface of a substrate in FIG. 1 , wherein components above the lower VC heat spreader are represented by dashed lines.

[0012] Figure 5 Schematically illustrates a method according to some embodiments Figure 1 The internal structure of the lower VC heat spreader with the upwardly extending VC heat transfer channel and the working principle of the lower VC heat spreader during operation.

[0013] FIG. 6A to FIG. 6C According to some embodiments, a Figure 1A vertical cross-sectional view of an intermediate step in a semiconductor package of a double-sided heat dissipation module.

[0014] Figure 7 is a vertical cross-sectional view of a first alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0015] Figure 8 is a vertical cross-sectional view of a second alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0016] Fig. 9 is a vertical cross-sectional view of a third alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0017] Fig.10 is a vertical cross-sectional view of a fourth alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0018] Fig.11 is a vertical cross-sectional view of a fifth alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0019] Fig.12 is a vertical cross-sectional view of a sixth alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0020] Fig.13 is a vertical cross-sectional view of a seventh alternative of a semiconductor package with a double-sided heat dissipation module according to some embodiments.

[0021] Fig.14 is a diagram showing some embodiments of the present invention. Fig.13 A plan view (eg, bottom view) of the arrangement of a second integrated circuit device and a lower VC heat spreader (and heat pipe (HP) heat transfer channels attached thereto) above a lower surface of a substrate in FIG.

[0022] Fig.15 is a flow chart of a method for removing heat from a semiconductor package using a double-sided heat dissipation module. DETAILED DESCRIPTION

[0023] The following disclosure provides many different embodiments or examples for realizing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0024] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0025] Three-dimensional integrated circuit (3D-IC) packaging provides many solutions to reduce the physical size of the packaged components and allows a greater number of components to be placed in a given chip area. One solution provided by 3D-IC packaging is to stack the die on top of one another and interconnect or route them through interconnects such as through silicon vias (TSVs). Some of the benefits of 3D-IC packaging include, for example, smaller footprints, reduced power consumption by reducing the length of signal interconnects, and improved yield and manufacturing costs if individual dies are tested individually before assembly.

[0026] High performance computing (HPC) has become increasingly popular and is widely used in advanced network and server applications, especially artificial intelligence (AI) related products that require high data rates, increased bandwidth, and reduced latency. A commonly used 3D-IC packaging architecture in high performance computing (HPC) applications is a chip-on-wafer-on-substrate (CoWoS) architecture, which is typically composed of multiple chip-on-wafer (CoW) dies / devices mounted on a substrate (e.g., its upper surface). Recently, in order to improve spacing utilization, components other than CoW dies (e.g., voltage regulator modules (VRMs), etc.) can be mounted on the lower surface of the substrate. However, this poses a challenge to the heat dissipation of these components under the substrate because they are not directly attached to the heat sink located on the top of the package, which causes thermal problems for these components and the entire package.

[0027] Embodiments described herein relate to semiconductor packages and methods of forming the same, the semiconductor packages including a double-sided (also referred to as sandwich-like) heat dissipation module for a system-on-substrate architecture, such as a CoWoS architecture for including multiple integrated circuit devices on both sides of a substrate. In some embodiments, the double-sided heat dissipation module includes a first (or upper) vapor chamber (VC) heat diffuser and a second (or lower) VC heat diffuser, which are thermally coupled to integrated circuit devices mounted on the upper and lower surfaces of the substrate, respectively, so that the heat generated by these integrated circuit devices can be quickly diffused through the first VC heat diffuser and the second VC heat diffuser to avoid the formation of local hot spots. In addition, the first VC heat diffuser and the second VC heat diffuser located on opposite sides of the substrate are thermally connected using one or more heat transfer channels / members to allow thermal energy to be transferred from the lower VC heat diffuser to the upper VC heat diffuser. The upper VC heat diffuser further dissipates the heat to the external environment, such as by air cooling. Therefore, the heat generated by the integrated circuit devices mounted on both sides of the substrate can be effectively dissipated simultaneously by the double-sided heat dissipation module, which will be described in more detail below. This reduces thermal issues on those package components and the entire package, thereby improving product reliability.

[0028] Reference now Figure 1 , a vertical cross-sectional view of a semiconductor package 100 according to some embodiments is shown. The semiconductor package 100 includes a system board 101 bonded to a first side (e.g., the lower side shown) of a 3D-IC package module 103. In some embodiments, the system board 101 is a printed circuit board (PCB), which can be used to interconnect various electronic components within the package to provide the desired functions for the user. For simplicity, conductive components (e.g., wires, through holes, contact pads, etc.), electronic components (e.g., active or passive components), and / or I / O interface connectors (e.g., slots) on and / or within the system board 101 are not shown. In some embodiments, the system board 101 can be electrically and physically coupled to another substrate on the side of the system board 101 opposite to the 3D-IC package module 103. Another substrate can provide a structural base and electrical interface from the system board 101 and / or the 3D-IC package module 103 to other devices and systems. In some embodiments, the system board 101 can be bonded to another substrate using an external connection (not shown), which can be a solder ball or other suitable conductive connection.

[0029] The 3D-IC packaging module 103 may be a CoWoS architecture, which may include a substrate 105 (also referred to as an interposer), a plurality of first packaging components 107 mounted on an upper surface 105A of the substrate 105, and a plurality of second packaging components 109 mounted on a lower surface 105B of the substrate 105. In some embodiments, the first packaging components 107 and the second packaging components 109 may be different types of integrated circuit (IC) devices (which will be described below), but the embodiments of the present disclosure are not limited thereto.

[0030] The substrate 105 is used to interconnect the first package component 107 and the second package component 109 on both sides of the substrate 105. In some embodiments, the substrate 105 can be a semiconductor substrate, which can be a bulk semiconductor substrate, a silicon-on-insulator (SOI) substrate, a multi-layer semiconductor substrate, etc. The semiconductor material of the substrate 105 can be: silicon; germanium; a compound semiconductor including silicon germanium, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; or a combination thereof. Other substrates, such as multi-layer or gradient substrates, can also be used. The substrate 105 can be doped or undoped.

[0031] In some embodiments, the substrate 105 may include conductive pads, conductive routing, and through substrate vias (TSVs) (not shown). The conductive routing may provide electrical interconnects and may electrically couple the conductive pads and TSVs. The conductive routing may include one or more layers of conductive lines, conductive vias, redistribution layers, metallization patterns, etc. In some embodiments, the substrate 105 may or may not include active and / or passive components (e.g., transistors, diodes, resistors, capacitors, etc.).

[0032] In some embodiments, the first package component 107 (also referred to herein as the first IC device) may include a plurality of high-performance semiconductor dies, which may be used, for example, for processing 3D smart Internet TV graphics or other processing-intensive applications. In some embodiments, the first package component 107 may include a processor (e.g., a central processing unit (CPU), a graphics processing unit (CPU), etc.) die, a memory (e.g., a dynamic random access memory (DRAM), a high bandwidth memory (HBM), a memory stack, etc.) die, or other suitable semiconductor IC die. The first package components 107 may all be package components of the same type with exactly the same structure, or may include a plurality of different types of package components. In addition, the first package components 107 may or may not have the same size (e.g., height in the z direction and / or area in the xy plane).

[0033] In some embodiments, each of the first package components 107 includes a semiconductor substrate having a plurality of IC die components thereon to form a functional integrated circuit. The IC die component may include an IC die or a stack of IC die. In some embodiments, the first package component 107 may be a system on chip (SoC) device, a system on integrated circuit (SoIC) device, etc. For simplicity, the detailed internal configuration of the first package component 107 is not shown. The first package component 107 may be obtained, for example, by sawing or cutting a semiconductor wafer (on which a plurality of IC dies or a stack of IC dies are preformed) along a scribe line to separate the semiconductor wafer into a plurality of independent semiconductor dies. In this way, each of the first package components 107 may also be referred to as a chip on wafer (CoW) die / device.

[0034] During assembly, the first package components 107 may be placed over the upper surface 105A of the substrate 105 using, for example, a pick and place tool. In the illustrative embodiment, the four first package components 107 may be as shown. Figure 2 105, but other numbers and / or arrangements of first package components 107 may also be used. The first package components 107 may be bonded to the upper surface 105A of the substrate 105 via a plurality of conductive connectors 108. In some embodiments, the conductive connectors 108 may be microbumps, but other suitable conductive connectors may also be used.

[0035] In some embodiments, bottom fill material 110 is dispensed into the gap between each of first package components 107 and substrate 105 to surround and protect conductive connector 108. Bottom fill material 110 may include epoxy, resin, filler material, stress release agent (SRA), adhesion promoter, another suitable material, or a combination thereof. In some embodiments, bottom fill material 110 is dispensed in a liquid state and then cured. In other embodiments, bottom fill material 110 may be omitted.

[0036] In some embodiments, a sealant (not shown for simplicity) is sealed (sometimes referred to as molded) on the first package component 107. The sealant fills the gap between adjacent first package components 107 and also covers the first package component 107. The sealant may include a molding compound, a molded bottom filler, etc. The sealant may include a polymer material, such as an epoxy-based resin in which a filler is dispersed. In some embodiments, the sealant is dispensed in a liquid state and then cured. In a subsequent step, a planarization process (e.g., a chemical mechanical polishing (CMP) process or a mechanical grinding process) may be applied to the sealant to partially remove the sealant material until the top surface of the first package component 107 is exposed from the sealant. This promotes the dissipation of heat generated from the first package component 107.

[0037] In some embodiments, the second package assembly 109 (also referred to herein as the second IC device) may include a plurality of voltage regulator modules (VRMs). Each VRM may include one or more power components (not shown), and such components are used as part of a power regulation circuit. In operation, the VRM receives a "pre-regulated" direct current (DC) input from a power supply (not shown), and further regulates the input to remove transient voltages, etc. This power regulation function is achieved by passing the input voltage through various filter components, including passive and / or active filter elements. Other functions (e.g., power distribution, power converters, etc.) may also be provided by the VRM. In other embodiments, the second package assembly 109 may include other types of integrated circuit devices that generate heat during operation, and are not limited to VRMs.

[0038] During assembly, the second package components 109 may be placed over the lower surface 105B of the substrate 105 using, for example, a pick and place tool. In the illustrative embodiment, the six second package components 109 may be as shown. Figure 4 105B, but other numbers and / or arrangements of second package components 109 may also be used. The second package component 109 may be bonded to the lower surface 105B of the substrate 105 via a plurality of conductive connectors (not shown for simplicity). In some embodiments, the conductive connectors may be microbumps, but other suitable conductive connectors may also be used.

[0039] In some embodiments, an underfill material and / or encapsulant (not shown) may also be applied adjacent to second package component 109 to protect second package component 109 and corresponding conductive connectors, similar to the underfill material 110 and / or encapsulant applied adjacent to first package component 107 discussed previously.

[0040] As described above, by placing components other than the CoW die (e.g., the first package component 107), such as the second package component 109, on the lower surface 105B of the substrate 105, the space utilization can be improved, thereby realizing a compact integrated circuit system. However, because the second package component 109 (e.g., the VRM or other possible components) below the substrate 105 is not directly attached to the heat sink (e.g., the heat sink 230 located on the top of the semiconductor package 100, as shown in FIG. Figure 1 ), so the heat generated by the second package component 109 during operation may not be effectively dissipated. This causes thermal problems in the second package component 109 or even the entire package. Therefore, according to some embodiments of the present disclosure, the semiconductor package 100 further includes a double-sided heat dissipation module 200 (see Figure 1 ).

[0041] like Figure 1 As shown in FIG. 1 , the double-sided heat dissipation module 200 includes a first (or upper) heat spreader 210 located above the 3D-IC packaging module 103 (e.g., located on the side of the 3D-IC packaging module 103 close to the first packaging component 107). In the present embodiment, the first heat spreader 210 is a heat spreader in the form of a vapor chamber, so it is also referred to herein as a first (or upper) vapor chamber (VC) heat spreader 210. Figure 3 The internal structure and working principle of the first VC heat spreader 210 are described in detail. The first VC heat spreader 210 may have a substantially flat plate structure and may be thermally coupled to (e.g., in thermal contact with) the first package component 107, so that the heat generated by the first package component 107 may be quickly diffused through the first VC heat spreader 210 in a two-dimensional manner (e.g., in the xy plane) to prevent the first package component 107 from forming a local hot spot.

[0042] In some embodiments, the bottom surface 210A of the first VC heat spreader 210 is attached to (e.g., in thermal contact with) the first package component 107 via one or more first thermal interface materials (TIMs) 201. The first thermal interface material 201 can be applied to the bottom surface 210A of the first VC heat spreader 210 or the top surface of the first package component 107 to provide a thermal interface between the first package component 107 and the first VC heat spreader 210 above. In some embodiments, the first thermal interface material 201 can have a thermal conductivity (e.g., a "k value") in Watts per meter Kelvin (W / mK) between about 1 W / mK and about 30 W / mK, such as about 4 W / mK. However, any suitable thermal conductivity value can be used.

[0043] In some embodiments, the first thermal interface material 201 may be a metal-based thermal paste containing silver, nickel, or aluminum particles suspended in silicone grease. In other embodiments, a non-conductive, ceramic-based paste filled with ceramic powders (such as beryllium oxide, aluminum nitride, aluminum oxide, or zinc oxide) may be applied. In other embodiments, the first thermal interface material 201 may be a solid material rather than a paste having a consistency similar to a gel or grease. In such embodiments, the first thermal interface material 201 may be a sheet of thermally conductive, solid material, such as indium, nickel, silver, aluminum, combinations and alloys of these, or other suitable thermally conductive solid materials. In some embodiments, the first thermal interface material 201 may be formed by spin coating, printing, placement, physical vapor deposition (PVD), or other suitable forming processes. In some embodiments, the first thermal interface material 201 may be formed to have a thickness (in the z direction) between about 20 μm and about 200 μm, such as about 60 μm. However, any other suitable thickness may also be used.

[0044] In some embodiments, the first VC heat spreader 210 may have a protruding portion 211 protruding from the bottom surface 210A of the first VC heat spreader 210 to physically and thermally contact the first thermal interface material 201 above the first package component 107. The protruding portion 211 is formed to compensate for the distance between the bottom surface 210A of the first VC heat spreader 210 and the top surface of the first package component 107, so that the amount of the first thermal interface material 201 can be reduced. In some embodiments, the protruding portion 211 has a cross-sectional shape and size (e.g., area) corresponding to the cross-sectional shape and size of the outermost boundary of all the first package components 107, such as Figure 2 In some alternative embodiments, other numbers (eg, two or more) and other arrangements of protrusions 211 are possible, depending on the arrangement of first package component 107. In other embodiments, protrusion 211 is not formed.

[0045] Figure 3 Schematically illustrates a method according to some embodiments Figure 1 The internal structure of the first VC heat spreader 210 and the working principle of the first VC heat spreader 210 during operation. It should be noted that for simplicity, Figure 3 The protruding portion 211 of the first VC heat spreader 210 is not shown. Figure 3 As shown in , the first VC heat spreader 210 includes a housing 212 that surrounds, hermetically seals, and defines a cavity between the inner walls of the housing 212, thereby providing a vapor chamber 213 (sometimes also referred to as a vacuum chamber) within the first VC heat spreader 210. The housing 212 may include a material having a high thermal conductivity and a low coefficient of thermal expansion (CTE). In some embodiments, the housing 212 includes a material such as copper, a copper alloy, copper tungsten (CuW), or aluminum silicon carbide (AlSiC). Other suitable materials for the housing 212 may also be used, as long as the material has at least a low CTE and a high thermal conductivity.

[0046] The thickness of the housing 212 of the first VC heat spreader 210 depends on several factors, including but not limited to the heat dissipation rate of the first package component 107 of the 3D-IC package module 103, the surface area of ​​the first package component 107, the thermal conductivity of the material of the housing 212, the presence of an external heat sink, and the desired size of the semiconductor package 100. In some embodiments, the housing 212 may include a sheet of thermally conductive material having a substantially uniform thickness. In other embodiments, the housing 212 may include sheets of thermally conductive material having different thicknesses. However, any suitable thermally conductive material and any suitable thickness variation may also be used.

[0047] In some embodiments, the size of the steam chamber 213 can be uniform throughout the first VC heat spreader 210. For example, the steam chamber 213 can have the same height (in the z direction), the same length (in the x direction), and the same depth (in the y direction) throughout the first VC heat spreader 210. In other embodiments, one or more of the sizes of the steam chamber 213 can vary throughout the first VC heat spreader 210. For example, the steam chamber 213 can have one or more different heights, different lengths, and different depths at different portions within the first VC heat spreader 210. In some embodiments, the steam chamber 213 of the first VC heat spreader 210 can have a height between about 2 mm and about 4 mm, such as about 3 mm. However, any suitable height or size may also be used.

[0048] In some embodiments, the vapor chamber 213 sealed within the first VC heat spreader 210 contains an evaporating and condensing liquid, such as a two-phase evaporable liquid, which is used as a working fluid (WF) 214 for the first VC heat spreader 210. The working fluid 214 is a liquid (e.g., Freon, water, alcohol, etc.) with a relatively high latent heat of vaporization to transfer heat from the first package assembly 107 (see Figure 1 ) dissipated. Figure 3 As shown in , the first VC heat spreader 210 also includes a substantially flat core layer 215 for receiving the working fluid 214. In some embodiments, the core layer 215 can be contained and sealed within the housing 212 and positioned substantially along all inner walls of the housing 212 that define the steam chamber 213. In other embodiments, the core layer 215 can be positioned substantially along the inner surface of the bottom wall of the housing 212 (e.g., facing the first package assembly 107). The core layer 215 can be made by weaving a metal wire having a large number of holes (not specifically shown) therein to generate a capillary force for transmitting the working fluid 214. Alternatively, the core layer 215 can also be made by other methods (e.g., sintering metal powder). In some embodiments, the core layer 215 can have an average thickness of about 0.1 mm to about 0.5 mm, but any suitable thickness can also be used.

[0049] In operation, the first VC heat spreader 210 is used to maintain the first TIM 201 (see Figure 1) within the first VC heat spreader 210 to discharge heat generated from the first package component 107 of the 3D-IC package module 103. As the first VC heat spreader 210 operates and works to conduct and discharge heat from the first package component 107, the working fluid 214 contained in the core layer 215 corresponding to the one or more thermal contact areas 216 (e.g., heat input areas 216) of the first VC heat spreader 210 heats up and evaporates. The vapor V of the working fluid 214 then diffuses to fill the vapor chamber 213 within the first VC heat spreader 210, and wherever the vapor V contacts a surface of the vapor chamber 213 that is cooler than the latent heat of evaporation of the working fluid 214, the heat is discharged through the cooler surface of the vapor chamber 213 (e.g., heat discharge area 218, which corresponds to the top surface 210B of the first VC heat spreader 210), and the vapor V condenses back to the working fluid 214 in its liquid form. Once condensed, the working fluid 214 flows back to the thermal contact area 216 via the capillary force generated by the core layer 215. Thereafter, the working fluid 214 evaporates and condenses frequently to form a circulation to discharge the heat generated by the first package component 107 of the 3D-IC package module 103. This structure effectively diffuses the thermal energy through the first VC heat spreader 210, so that the heat generated by the first package component 107 can be discharged via the heat input area 216 and dissipated to the surrounding environment via the heat exhaust area 218 in an efficient manner (for example, in an example where a fan module (not shown) provides an airflow F flowing through the first VC heat spreader 210 for air cooling, such as Figure 1 ). Therefore, thermal problems (eg, local hot spots) of the first package component 107 may be avoided.

[0050] The double-sided heat dissipation module 200 also includes a second (or lower) heat spreader 220 located below the 3D-IC packaging module 103 (eg, located on a side of the 3D-IC packaging module 103 close to the second packaging component 109), such as Figure 1 In this embodiment, the second heat spreader 220 is a heat spreader in the form of a vapor chamber, so it is also referred to herein as the second (or lower) vapor chamber (VC) heat spreader 220. Figure 5 The internal structure and working principle of the second VC heat spreader 220 are described in detail. Similarly, the second VC heat spreader 220 (e.g., its body 2201) can have a substantially flat plate structure, and can be thermally coupled to (e.g., in thermal contact with) the second package component 109, so that the heat generated by the second package component 109 can be quickly diffused through the second VC heat spreader 220 in a two-dimensional manner (e.g., in the xy plane) to prevent the second package component 109 from forming a local hot spot.

[0051] In some embodiments, the top surface 220A of the second VC heat spreader 220 (e.g., body 2201) is attached to (e.g., in thermal contact with) the second package component 109 via one or more second thermal interface materials (TIMs) 203. The second thermal interface material 203 can be applied to the top surface 220A of the second VC heat spreader 220 or the bottom surface of the second package component 109 to provide a thermal interface between the second package component 109 and the second VC heat spreader 220 below. In some embodiments, the second thermal interface material 203 can have a thermal conductivity (e.g., a "k value") in Watts per meter Kelvin (W / mK) between about 1 W / mK and about 30 W / mK, such as about 4 W / mK, similar to the thermal conductivity of the first TIM 201. However, any suitable thermal conductivity value can be used. In some embodiments, the second thermal interface material 203 can be the same material as the first thermal interface material 201 described above, but the second thermal interface material 203 can also be a different material from the first thermal interface material 201. The dimensions (eg, thickness) and formation method of the second thermal interface material 203 may be the same as or similar to those of the first thermal interface material 201 and are not repeated here.

[0052] In some embodiments, the second VC heat spreader 220 may have a protruding portion 221 protruding from the top surface 220A of the second VC heat spreader 220 to physically and thermally contact the second thermal interface material 203 under the second package component 109. The protruding portion 221 is formed to compensate for the distance between the top surface 220A of the second VC heat spreader 220 and the bottom surface of the second package component 109, so that the amount of the second thermal interface material 203 used can be reduced. In some embodiments, the protruding portion 221 may have a cross-sectional shape and size (e.g., area) corresponding to the cross-sectional shape and size of the outermost boundary of all the second package components 109, such as Figure 4 In some alternative embodiments, there may be another number (eg, two or more) of protruding portions 221 in another arrangement, depending on the number and / or arrangement of second package components 109. In other embodiments, protruding portion 221 is not formed.

[0053] In some embodiments, the second VC heat spreader 220 is placed in such a manner that the bottom surface 220B of the second VC heat spreader 220 (eg, the body 2201 ) is in direct contact with the top surface of the system board 101 . Figure 1 The second package component 109 can be separated from the system board 101 by the second VC heat spreader 220. In addition, in some examples, the 3D-IC package module 103 can also include an I / O interface connector 115 (e.g., a socket, see Figure 1) for electrically connecting the 3D-IC package module 103 to the system board 101. In such an example, the I / O interface connector 115 can be arranged along the edge of the substrate 105 and arranged outside the second VC heat spreader 220 in a plan view (e.g., Figure 4 ), so the second VC heat spreader 220 will not interfere with the connection between the 3D-IC package module 103 and the system board 101 through the I / O interface connector 115. It should be noted that Figure 4 The arrangement of I / O interface connections 115 shown in FIG. 1 is merely a non-limiting example, and other arrangements may be used.

[0054] In this embodiment, the difference between the second VC heat spreader 220 and the first VC heat spreader 210 is that the opposite ends (in the x direction) of the main body 2201 of the second VC heat spreader 220 are respectively connected to the vertically extending heat transfer channels 2202 (see FIG. Figure 1 ). In other embodiments, other numbers (e.g., one or more than two) and other arrangements / configurations (e.g., positions) of heat transfer channels 2202 may also be used and are fully intended to be included within the scope of the presently disclosed embodiments. Each heat transfer channel 2202 may extend vertically upward from the top surface 220A of the body 2201 toward the bottom surface 210A of the first VC heat spreader 210. In some embodiments, the heat transfer channel 2202 may have a height (in the z-direction) substantially equal to the vertical distance between the bottom surface 210A of the first VC heat spreader 210 and the top surface 220A of the second VC heat spreader 220 (e.g., the body 2201).

[0055] In some embodiments, the distal end of the heat transfer channel 2202 may be thermally coupled to (e.g., in thermal contact with) the first VC heat spreader 210 (e.g., via one or more third thermal interface materials (TIMs) 205) to allow thermal energy to be transferred from the second VC heat spreader 220 to the first VC heat spreader 210 through the heat transfer channel 2202, in an example where a fan module (not shown) provides an air flow F through the first VC heat spreader 210 for air cooling (see Figure 1 ). The third TIM 205 may be the same as or similar to the first TIM 201 or the second TIM 203 described above, and thus will not be repeated here.

[0056] In some embodiments, the body 2201 and the heat transfer channels 2202 of the second VC heat spreader 220 are an integrally formed continuous structure (i.e., there is no bonding interface, such as an adhesive, between the body 2201 and each heat transfer channel 2202, and the vapor chamber extends continuously throughout the structure). In this regard, each of the heat transfer channels 2202 is also in the form of a vapor chamber, so it is also referred to herein as a vapor chamber (VC) heat transfer channel 2202. In addition, in a plan view, the depth dimension W1 (in the y direction) of the body 2201 and the depth dimension W2 (in the y direction) of the heat transfer channel 2202 can be the same as Figure 4 , but the disclosed embodiments are not limited thereto. In some embodiments, each VC heat transfer channel 2202 of the second VC heat spreader 220 can be formed by applying mechanical force to bend a portion of one end of the long flat vapor chamber (VC) by 90 degrees. However, any other suitable method for forming the VC heat transfer channel 2202 can also be used.

[0057] Figure 5 Schematically illustrates a method according to some embodiments Figure 1 The internal structure of the second VC heat spreader 220 (having the VC heat transfer channel 2202 extending upward) and the working principle of the second VC heat spreader 220 during operation. It should be noted that for simplicity, Figure 5 The protruding portion 221 of the second VC heat spreader 220 is not shown. Figure 5 As shown in , the second VC heat spreader 220 includes a housing 222 that surrounds, hermetically seals, and defines a cavity between the inner walls of the housing 222, thereby providing a vapor chamber 223 (sometimes also referred to as a vacuum chamber) within the second VC heat spreader 220. Details of the housing 222 of the second VC heat spreader 220 (e.g., including materials, thickness, etc.) may be similar to those of the housing 212 of the first VC heat spreader 210 described above, except that the housing 222 also has two vertically extending portions (not otherwise labeled) corresponding to the VC heat transfer channels 2202.

[0058] like Figure 5As shown in , the steam chamber 223 within the second VC heat spreader 220 extends continuously from the body 2201 to the VC heat transfer channel 2202 of the second VC heat spreader 220. In some embodiments, the size of the steam chamber 223 can be uniform throughout the second VC heat spreader 220. For example, the steam chamber 223 can have the same height (in the z direction), the same length (in the x direction), and the same depth (in the y direction) throughout the horizontally extending body 2201, and can have the same channel width (in the x direction) and the same depth (in the y direction) throughout the vertically extending VC heat transfer channel 2202. In other embodiments, one or more of the sizes of the steam chamber 223 can vary throughout the second VC heat spreader 220. For example, the steam chamber 223 can have one or more different heights, different lengths, different channel widths, and different depths at different portions within the second VC heat spreader 220. In some embodiments, the vapor chamber 223 of the second VC heat spreader 220 may have a height or channel width (i.e., the height of the body 2201 or the channel width of each VC heat transfer channel 2202) between about 2 mm and about 4 mm, such as about 3 mm. However, any suitable height or size may be used.

[0059] In some embodiments, the vapor chamber 223 sealed within the second VC heat spreader 220 contains an evaporating and condensing liquid, such as a two-phase evaporable liquid, which serves as a working fluid (WF) 224 for the second VC heat spreader 220. The working fluid 224 is a liquid (e.g., Freon, water, alcohol, etc.) with a relatively high latent heat of vaporization to transfer heat from the second package assembly 109 (see Figure 1 ) dissipated. Figure 5 As shown in , the second VC heat spreader 220 also includes a substantially flat core layer 225 for receiving the working fluid 224. In some embodiments, the core layer 225 can be contained and sealed within the housing 222 and positioned substantially along all inner walls of the housing 222 that define the vapor chamber 223. In other embodiments, the core layer 225 can be positioned substantially along the inner surface of the top wall of the housing 222 corresponding to the body 2201 (e.g., facing the second package assembly 109) and along the inner surface of the inner wall of the housing 222 corresponding to the heat transfer channel 2202 (e.g., facing the second package assembly 109). The material, structure, thickness, and formation method of the core layer 225 can be the same as or similar to those of the core layer 215 of the first VC heat spreader 210 described above, and therefore are not repeated here.

[0060] In operation, the second VC heat spreader 220 is used to maintain the second TIM 203 (see Figure 1) within the second VC heat spreader 220 (e.g., heat input zone 226) to discharge heat generated from the second package component 109 of the 3D-IC package module 103. As the second VC heat spreader 220 operates and works to conduct and discharge heat from the second package component 109, the working fluid 224 contained in the core layer 225 corresponding to the one or more thermal contact zones 226 (e.g., heat input zone 226) of the second VC heat spreader 220 is heated and evaporated. The vapor V of the working fluid 224 then diffuses to fill the vapor chamber 223 within the second VC heat spreader 220 (including the body 2201 and the heat transfer channels 2202), and wherever the vapor V contacts a surface of the vapor chamber 223 that is cooler than the latent heat of evaporation of the working fluid 224, the heat is passed through the cooler surface of the vapor chamber 223 (e.g., heat discharge zone 228, such as maintained at the third TIM 205 (see Figure 1 ) is discharged through one or more thermal contact areas 228 within the 3D-IC packaging module 103, and the vapor V condenses back to the working fluid 224 in its liquid form. Once condensed, the working fluid 224 flows back to the thermal contact area 226 via the capillary force generated by the core layer 225. Thereafter, the working fluid 224 evaporates and condenses frequently to form a circular flow to discharge the heat generated by the second packaging component 109 of the 3D-IC packaging module 103. This structure effectively diffuses the thermal energy through the second VC heat spreader 220, so that the heat generated by the second packaging component 109 can be discharged through the heat input area 226 and dissipated to the surrounding environment in an efficient manner through the heat discharge area 228 (for example, transmitted to the first VC heat spreader 210 via the third TIM 205). The first VC heat spreader 210 then further dissipates the heat to the external environment, such as by air cooling. Therefore, thermal problems (for example, local hot spots) of the second packaging component 109 can be avoided.

[0061] By placing the first VC heat spreader 210 and the second VC heat spreader 220 in thermal contact with the first package component 107 and the second package component 109 of the 3D-IC package module 103, respectively, and thermally coupling the first VC heat spreader 210 and the second VC heat spreader 220 through the VC heat transfer channel 2202 (as described above), the heat generated by the package components mounted on both sides of the substrate 105 can be effectively dissipated simultaneously through the double-sided heat dissipation module 200. This reduces thermal issues on those package components and the entire package, thereby improving product reliability.

[0062] In some embodiments, the double-sided heat dissipation module 200 further includes a heat sink 230 (eg, a fin structure). Figure 1. The heat sink 230 may be made of a relatively high thermal conductivity material (e.g., copper) and may be bonded (e.g., soldered) to the side of the first VC heat spreader 210 opposite to the 3D-IC package module 103 (e.g., top surface 210B) to improve the heat dissipation efficiency of the double-sided heat dissipation module 200. The heat sink 230 facilitates heat dissipation by allowing airflow provided by a fan module (not shown) to flow through the fin structure of the heat sink 230 having a relatively large surface area. It should be noted that Figure 1 The structure of the heat sink 230 shown in is merely a non-limiting example, and other structures may also be used. In other embodiments, the heat sink 230 is not present.

[0063] Figure 1 Also shown are a plurality of screws S provided to secure the first VC heat spreader 210 and the second VC heat spreader 220 together and to secure the double-sided heat dissipation module 200 to the system board 101 according to some embodiments. For example, the screws S may pass through corresponding openings O1 (see FIG. 1 ) in the first VC heat spreader 210. Figure 2 ), the corresponding opening O2 of the second VC heat spreader 220 (see Figure 4 ) and corresponding openings (not specifically shown) of the system board 101 to secure these components together. In some embodiments, each of the screws S is a spring screw that can provide appropriate force on the "sandwich-like" heat dissipation module 200 for better coverage and contact of the TIMs (e.g., 201, 203, and 205) between the VC heat spreaders (e.g., 210 and 220) and between the VC heat spreaders (e.g., 210 and 220) and the corresponding package components (e.g., 107 and 109). In other embodiments, other suitable fastening methods may also be used.

[0064] Figure 1 It is also shown that according to some embodiments, the 3D-IC package module 103 includes an upper ring 111 and a lower ring 113 attached to the upper surface 105A and the lower surface 105B of the substrate 105, respectively (e.g., via an adhesive, not shown). The upper ring 111 and the lower ring 113 can be arranged along the edge of the substrate 105, and can surround the package components (e.g., 107 and 109) in a plan view. In some embodiments, each of the upper ring 111 and the lower ring 113 can be a reinforcement ring for reducing warping of the substrate 105. Examples of materials of the upper ring 111 and the lower ring 113 may include metals such as copper, stainless steel, stainless steel / Ni, etc., but are not limited thereto. In the illustrated embodiment, a gap separates the upper ring 111 from the upper VC heat spreader 210, and a gap separates the lower ring 113 from the lower VC heat spreader 220, but in other embodiments, additional TIMs may also be applied to one or more of the gaps for better thermal conduction and heat dissipation.

[0065] Other components and processes may also be included. For example, a test structure may be included to help perform verification testing on a 3D package or 3DIC device. The test structure may include, for example, a test pad formed in a redistribution layer or on a substrate, which allows testing of the 3D package or 3DIC, using probes and / or probe cards, etc. Verification testing may be performed on intermediate structures as well as final structures. In addition, the structures and methods disclosed herein may be used in conjunction with a test method that incorporates intermediate verification of known good dies to increase yield and reduce costs.

[0066] FIG. 6A to FIG. 6C According to some embodiments, a Figure 1 The semiconductor package 100 of the double-sided heat dissipation module 200 (for example, see Figure 6C ) is a vertical cross-section of an intermediate step. Fig. 6A In the embodiment, after forming or obtaining the 3D-IC package module 103 and the second VC heat spreader 220, one or more second TIMs 203 may be applied as discussed above. Thereafter, the 3D-IC package module 103 and the second VC heat spreader 220 may be pressed against each other so that the 3D-IC package module 103 (e.g., the second package component 109) and the second VC heat spreader 220 are bonded and fixed together by the second TIM 203.

[0067] exist Figure 6B , the assembly of the 3D-IC package module 103 and the second VC heat spreader 220 is placed on the system board 101 and then fixed to the system board 101 by using a plurality of screws S (eg, spring screws) passing through the second VC heat spreader 220 and the system board 101 .

[0068] exist Figure 6CIn the embodiment, after forming or obtaining the first VC heat spreader 210 (which may or may not have a heat sink 230 (e.g., a fin structure) attached thereto in some instances), one or more first TIMs 201 and third TIMs 205 may be applied as discussed above. Then, the 3D-IC package module 103, the second VC heat spreader 220, and the assembly of the system board 101 and the first VC heat spreader 210 may be pressed against each other so that the first VC heat spreader 210 and the 3D-IC package module 103 (e.g., the first package component 107) are bonded and fixed together by the first TIM 201, and the VC heat transfer channels 2202 of the first VC heat spreader 210 and the second VC heat spreader 220 are bonded and fixed together by the third TIM 205. Thereafter, a plurality of additional screws S (e.g., spring screws) may be provided to pass through the first VC heat spreader, the second VC heat spreader 220, and the system board 101, which facilitates better coverage and contact of the TIMs (e.g., 201, 203, and 205) between the VC heat spreaders (e.g., 210 and 220) and between the VC heat spreaders (e.g., 210 and 220) and the corresponding package components (e.g., 107 and 109).

[0069] It should be pointed out that FIG. 6A to FIG. 6C The order of assembly shown in is merely a non-limiting example, and other orders of assembly may also be used.

[0070] Figure 7 FIG. 1 is a vertical cross-sectional view of a first alternative of a semiconductor package 100 according to some embodiments. In the first alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with a double-sided heat dissipation module 300, and other components are the same as those of FIG. Figures 1 to 5 The double-sided heat dissipation module 300 is the same as the original embodiment shown in . The double-sided heat dissipation module 200 is different from the double-sided heat dissipation module 200 in that the vertically extending VC heat transfer channels 2202 of the second VC heat spreader 220 are not present, and the vertically extending VC heat transfer channels 2102 are connected to opposite ends of the body 2101 of the first VC heat spreader 210 (for example, they can extend vertically downward from the bottom surface 210A of the body 2101 of the first VC heat spreader 210 toward the top surface 220A of the second VC heat spreader 220). The structure and other details of the VC heat transfer channels 2102 of the first VC heat spreader 210 can be similar to Figures 1 to 5 In this embodiment, the third TIM 205 may be applied between the bottom surface of the distal end of the VC heat transfer channel 2102 and the top surface 220A of the second VC heat spreader 220 .

[0071] Figure 8FIG. 1 is a vertical cross-sectional view of a second alternative of a semiconductor package 100 having a double-sided heat dissipation module 400 according to some embodiments. In the second alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 400, and other components are replaced with the double-sided heat dissipation module 400. Figures 1 to 5 The double-sided heat dissipation module 400 is the same as the original embodiment shown in . The difference between the double-sided heat dissipation module 200 is that each of the VC heat transfer channels 2202 extending from the second VC heat spreader 220 is changed to a C-shape instead of a vertical straight shape. In an optional embodiment, the VC heat transfer channels 2202 may have a U-shape or some other suitable curved shape. In some embodiments, each C-shaped VC heat transfer channel 2202 may be formed by applying a mechanical force to bend a portion of one end of a long flat vapor chamber (VC). However, any other suitable method for forming the C-shaped VC heat transfer channel 2202 may also be used. In other embodiments, the C-shaped VC heat transfer channel may also be connected to the first VC heat spreader 210 (e.g., extending continuously from the first VC heat spreader 210) instead of the second VC heat spreader 220 (similar to Figure 7 In this embodiment, the third TIM 205 may be applied between the distal end of the C-shaped VC heat transfer channel 2202 and the sidewall of the first VC heat spreader 210. In various embodiments, any other suitable shapes may also be used.

[0072] Fig. 9 FIG. 1 is a vertical cross-sectional view of a third alternative of a semiconductor package 100 having a double-sided heat dissipation module 500 according to some embodiments. In the third alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 500, and other components are replaced with the double-sided heat dissipation module 500. Figures 1 to 5 The double-sided heat dissipation module 500 is the same as the original embodiment shown in . The double-sided heat dissipation module 200 is different from the double-sided heat dissipation module 200 in that the first VC heat spreader 210 and the second VC heat spreader 220 are connected by two VC heat transfer channels 240 (which can be similar to the VC heat transfer channels 2102 or 2202 described above) on opposite ends, wherein one end of each VC heat transfer channel 240 is directly (e.g., physically) connected to the corresponding end of the first VC heat spreader 210, and the other end is directly (e.g., physically) connected to the corresponding end of the second VC heat spreader 220. In this regard, the first VC heat spreader 210, the second VC heat spreader 220 and the two VC heat transfer channels 240 are an integrally formed continuous structure (e.g., there is no bonding interface, such as an adhesive, between these components, and the vapor chamber extends continuously throughout the structure), which can be formed by connecting these components using a welding process. Other suitable forming processes can also be used.

[0073] Fig.10FIG. 1 is a vertical cross-sectional view of a fourth alternative of a semiconductor package 100 having a double-sided heat dissipation module 600 according to some embodiments. In the fourth alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 600, and other components are the same as those of FIG. Figures 1 to 5 The double-sided heat dissipation module 600 is different from the double-sided heat dissipation module 200 in that the first VC heat spreader 210 and the second VC heat spreader 220 are connected by two separate VC heat transfer channels 240' (which may be similar to the VC heat transfer channels 2102 or 2202 described above) on opposite ends, wherein one end of each VC heat transfer channel 240' is thermally coupled to the corresponding end of the first VC heat spreader 210 via the third TIM 205, and the other end is thermally coupled to the corresponding end of the second VC heat spreader 220 via the fourth TIM 206 (which may be similar to the first TIM 201, the second TIM 203 or the third TIM 205 described above).

[0074] Fig.11 FIG. 1 is a vertical cross-sectional view of a fifth alternative of a semiconductor package 100 having a double-sided heat dissipation module 700 according to some embodiments. In the fifth alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 700, and other components are replaced with the double-sided heat dissipation module 700. Figures 1 to 5 . The double-sided heat dissipation module 700 differs from the double-sided heat dissipation module 200 in that a third (or top) vapor chamber (VC) heat spreader 250 (which may be similar to the first VC heat spreader 210 or the second VC heat spreader 220 described above) is placed above and attached to the heat sink 230. In some embodiments, the third VC heat spreader 250 may be in thermal contact with the fin structure of the heat sink 230 via a thermal interface material (TIM) or by welding (not shown). In addition, the VC heat transfer channel 2202 extending from the second VC heat spreader 220 is thermally coupled to the third VC heat spreader 250 via the third TIM 205, rather than the first VC heat spreader 210.

[0075] Through the above configuration, in addition to quickly dissipating the heat generated by the first package component 107 to the surrounding environment through the first VC heat spreader 210 and / or the heat sink 230 (as described above), the heat generated by the second package component 109 can also be transferred from the second VC heat spreader 220 to the third VC heat spreader 250 through the heat transfer channel 2202, and then the third VC heat spreader 250 dissipates the heat to the external environment via the heat sink 230 (for example, the heat can be removed by the air flow F flowing through the fin structure of the heat sink 230). Therefore, the package components (for example, 107 and 109) mounted on both sides of the substrate 105 of the 3D-IC package module 103 can effectively dissipate heat through the double-sided heat dissipation module 700 at the same time. In addition, because the first VC heat spreader 210 and the second VC heat spreader 220 are not thermally coupled, this reduces the thermal crosstalk between the first VC heat spreader 210 and the second VC heat spreader 220, thereby improving the heat dissipation efficiency.

[0076] Fig.12 FIG. 1 is a vertical cross-sectional view of a sixth alternative of a semiconductor package 100 having a double-sided heat dissipation module 800 according to some embodiments. In the sixth alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 800, and other components are replaced with the double-sided heat dissipation module 800. Figures 1 to 5 The double-sided heat dissipation module 800 is similar to the original embodiment shown in FIG. Fig.11 The double-sided heat dissipation module 700 shown in FIG. 7 is different in that the first (or upper) VC heat spreader 210 attached to the first package component 107 is omitted. In addition, the heat sink 230 ′ (e.g., the connection base 2301 supporting the fin structure 2302) is directly attached to (e.g., in thermal contact with) the first package component 107 via one or more first thermal interface materials (TIMs) 201. The double-sided heat dissipation module 800 can also achieve the same as described above. Fig.11 The double-sided heat dissipation module 700 has the same or similar heat dissipation effect.

[0077] Fig.12 It is also shown that one or more fourth thermal interface materials (TIM) 207 can be applied between the top surface of the upper ring 111 and the bottom surface of the heat sink 230' (e.g., the connection substrate 2301) to enhance thermal conduction and heat dissipation. For example, some of the heat generated within the 3D-IC packaging module 103 during operation can also be dissipated through the upper ring 111 and the fourth TIM 207 to the heat sink 230', and then dissipated to the external environment. In other embodiments, the fourth TIM 207 is not present, and a gap separates the upper ring 111 from the upper VC heat spreader 210, similar to the above reference. Figure 1 Examples discussed.

[0078] Fig.13FIG. 1 is a vertical cross-sectional view of a seventh alternative of a semiconductor package 100 having a double-sided heat dissipation module 900 according to some embodiments. In the seventh alternative of the semiconductor package, the double-sided heat dissipation module 200 is replaced with the double-sided heat dissipation module 900, and other components are replaced with the double-sided heat dissipation module 900. Figures 1 to 5 The double-sided heat dissipation module 900 is similar to the double-sided heat dissipation module 200, except that the VC heat transfer channel 2202 of the second VC heat spreader 220 is absent, and a plurality of heat transfer channels 260 in the form of heat pipes (therefore also referred to herein as heat pipe (HP) heat transfer channels 260) are provided to transfer heat from the second VC heat spreader 220 to the first VC heat spreader 210 along their long axis direction (e.g., z direction).

[0079] In the present embodiment, the HP heat transfer channel 260 is bonded (e.g., welded) to the top surface 220A of the second VC heat spreader 220, so that the second VC heat spreader 220 and the HP heat transfer channel 260 form a continuous structure (e.g., the second VC heat spreader 220 and the HP heat transfer channel 260 share a single continuous vapor / vacuum chamber). The distal end of the HP heat transfer channel 260 can be thermally coupled to (e.g., in thermal contact with) the first VC heat spreader 210 (e.g., via one or more third thermal interface materials (TIMs) 205) to allow thermal energy to be transferred from the second VC heat spreader 220 to the first VC heat spreader 210 through the HP heat transfer channel 260. The double-sided heat dissipation module 900 can also implement the same as discussed above. Figures 1 to 5 The double-sided heat dissipation module 200 has the same or similar heat dissipation effect.

[0080] Fig.14 is a diagram showing some embodiments of the present invention. Fig.13 FIG. 1 is a plan view (eg, bottom view) of the arrangement of the second integrated circuit device 109 and the second (or lower) VC heat spreader 220 (and the HP heat transfer channel 260 attached thereto) above the lower surface 105B of the substrate 105 in FIG. Fig.14 As shown in FIG. 1 , the HP heat transfer channels 260 may be arranged along opposite edges of the second VC heat spreader 220. The diameter dimension W3 of each HP heat transfer channel 260 may be smaller than the depth dimension W1 (in the y direction) in a plan view. It should be noted that the number and arrangement of the HP heat transfer channels 260 may be determined according to actual needs and are not limited to Fig.14 Those shown in .

[0081] Although the HP heat transfer channel 260 Fig.14 2 is shown as being bonded (eg, welded) to the second VC heat spreader 220, but the HP heat transfer channel 260 may be bonded (eg, welded) to the first VC heat spreader 210 (similar to Figure 7), joined (e.g., welded) to the first VC heat spreader 210 and the second VC heat spreader 220 (similar to the embodiment shown in Fig. 9 ), or in other embodiments may be a first VC heat spreader 210 and a second VC heat spreader 220 (similar to Fig.10 In other embodiments, the HP heat transfer channel 260 may be C-shaped or U-shaped, rather than a vertical straight line (similar to Figure 8 Any other suitable shape may also be used.

[0082] It should be understood that the structure, configuration and manufacturing method of the double-sided heat dissipation module described herein are merely illustrative and are not intended to and should not be construed as limiting the embodiments of the present disclosure. Once known through the embodiments of the present disclosure, many alternatives and modifications will be apparent to those skilled in the art. For example, the various components in the above-mentioned different embodiments can be combined arbitrarily (for example, both VC-type and HP-type heat transfer channels can be included in the double-sided heat dissipation module).

[0083] Fig.15 1 is a flow chart of a method 1000 for dissipating heat from a semiconductor package using a double-sided heat dissipation module. In step 1010 of method 1000, a package structure (e.g., a 3D-IC package module 103) is provided, which includes a substrate 105, a plurality of first integrated circuit devices 107 located above an upper surface 105A of the substrate 105, and a plurality of second integrated circuit devices 109 located above a lower surface 105B of the substrate 105. In step 1020 of method 1000, a first vapor chamber (VC) heat spreader 210 is disposed in thermal contact with the first integrated circuit devices 107. In step 1030 of method 1000, a second vapor chamber (VC) heat spreader 220 is disposed in thermal contact with the second integrated circuit devices 109. In step 1040 of method 1000, the first VC heat spreader 210 and the second VC heat spreader 220 are thermally connected using one or more heat transfer channels or members (e.g., 2102, 2202, 240, 240', 260) so that thermal energy can be transferred from the second VC heat spreader 220 to the first VC heat spreader 210. In step 1050 of method 1000, the thermal energy is dissipated to the external environment (e.g., by air cooling) through the first VC heat spreader 210 or an optional heat sink (e.g., 230) attached thereto.

[0084] Embodiments of the double-sided heat dissipation module discussed herein may have advantages. By arranging the upper VC heat diffuser and the lower VC heat diffuser to be thermally coupled to the first package component and the second package component on both sides of the substrate / interposer of the 3D-IC package structure, respectively, and thermally coupling the upper VC heat diffuser and the lower VC heat diffuser through one or more heat transfer channels / members as discussed above, the heat energy generated by the second package component under the substrate during operation can be transferred from the lower VC heat diffuser to the upper VC heat diffuser, and then dissipated to the external environment through the upper VC heat diffuser or an optional heat sink attached thereto. Therefore, the package components mounted on both sides of the substrate can effectively dissipate heat at the same time, thereby reducing thermal problems on those package components and the entire package. Therefore, product reliability is improved.

[0085] According to some embodiments, a semiconductor package is provided. The semiconductor package includes a substrate having an upper surface and a lower surface, a first integrated circuit device mounted on the upper surface, and a second integrated circuit device mounted on the lower surface. A first heat diffuser in the form of a vapor chamber (VC) is located above the first integrated circuit device. A second heat diffuser in the form of a vapor chamber is located above the second integrated circuit device. A heat transfer member thermally couples the first heat diffuser and the second heat diffuser on both sides of the substrate.

[0086] According to some embodiments, a semiconductor package is provided. The semiconductor package includes a substrate having a first surface and a second surface, a first package component mounted on the first surface, and a second package component mounted on the second surface. A first heat diffuser in the form of a vapor chamber (VC) is located above the first package component. A second heat diffuser in the form of a vapor chamber is located above the second package component. The second heat diffuser includes a body and a heat transfer channel extending continuously from the body to thermally contact the first heat diffuser.

[0087] According to some embodiments, a method for dissipating heat from a semiconductor package is provided. The method includes: providing a package structure including a substrate, a first integrated circuit device mounted on an upper surface of the substrate, and a second integrated circuit device mounted on a lower surface of the substrate. The method includes setting a first heat diffuser in the form of a vapor chamber (VC) to be thermally coupled to the first integrated circuit device. The method includes setting a second heat diffuser in the form of a vapor chamber to be thermally coupled to the second integrated circuit device. The method includes using one or more heat transfer channels to thermally couple the first heat diffuser and the second heat diffuser so that thermal energy can be transferred from the second heat diffuser to the first heat diffuser. The method also includes dissipating heat to an external environment through the first heat diffuser.

[0088] Some embodiments of the present application provide a semiconductor package, including: a substrate having an upper surface and a lower surface; a plurality of first integrated circuit devices mounted on the upper surface; a plurality of second integrated circuit devices mounted on the lower surface; a first vapor chamber (VC) heat diffuser located above the plurality of first integrated circuit devices; a second vapor chamber heat diffuser located above the plurality of second integrated circuit devices; and a heat transfer member thermally coupling the first vapor chamber heat diffuser and the second vapor chamber heat diffuser.

[0089] In some embodiments, each of the first and second vapor chamber heat diffusers has a substantially flat plate structure and includes a vapor chamber containing a two-phase vaporizable liquid sealed therein, and wherein the heat transfer member is a vapor chamber heat transfer channel and has the same structure as the first and second vapor chamber heat diffusers. In some embodiments, the heat transfer member extends continuously from one of the first and second vapor chamber heat diffusers, and the heat transfer member and the vapor chamber heat diffuser share a single vapor chamber, and wherein the distal end of the heat transfer member is in thermal contact with the other of the first and second vapor chamber heat diffusers via a thermal interface material. In some embodiments, the first, second, and heat chamber heat diffusers are integrally formed and share a single continuous vapor chamber. In some embodiments, the heat transfer member is C-shaped or vertically linear. In some embodiments, the semiconductor package further includes: a plurality of screws passing through the first and second vapor chamber heat diffusers. In some embodiments, the semiconductor package further includes: a heat sink attached to the first vapor chamber heat diffuser. In some embodiments, the first vapor chamber heat diffuser is in thermal contact with the first integrated circuit device on a first side of the first vapor chamber heat diffuser through a thermal interface material, and the heat sink is attached to a second side of the first vapor chamber heat diffuser opposite to the first side. In some embodiments, the semiconductor package further includes: a third vapor chamber heat diffuser located above the first integrated circuit device and in thermal contact with the first integrated circuit device through a thermal interface material, wherein the first vapor chamber heat diffuser is disposed on a side of the third vapor chamber heat diffuser opposite to the first integrated circuit device, and the heat sink is located between and attached to the first vapor chamber heat diffuser and the third vapor chamber heat diffuser, and wherein the third vapor chamber heat diffuser is not thermally coupled to the second vapor chamber heat diffuser. In some embodiments, the semiconductor package further includes: a plurality of screws passing through the third vapor chamber heat diffuser and the second vapor chamber heat diffuser. In some embodiments, the semiconductor package further comprises: a heat sink attached to the first integrated circuit device via a thermal interface material, wherein the first vapor chamber heat spreader is located above and in thermal contact with the heat sink, and the heat sink is located between the first vapor chamber heat spreader and the first integrated circuit device.In some embodiments, each of the first vapor chamber heat diffuser and the second vapor chamber heat diffuser has a substantially flat plate structure and includes a vapor chamber containing a two-phase vaporizable liquid sealed therein, and wherein the heat transfer member is a heat pipe and is connected to each of the first vapor chamber heat diffuser and the second vapor chamber heat diffuser by a thermal interface material or by welding.

[0090] Other embodiments of the present application provide a semiconductor package, comprising: a substrate having a first surface and a second surface; a plurality of first package components mounted on the first surface; a plurality of second package components mounted on the second surface; a first vapor chamber (VC) heat diffuser located above the plurality of first package components; and a second vapor chamber heat diffuser located above the plurality of second package components, the second vapor chamber heat diffuser comprising: a main body; and a heat transfer channel extending continuously from the main body to thermally contact the first vapor chamber heat diffuser.

[0091] In some embodiments, no bonding interface is formed between the body of the second vapor chamber heat diffuser and the heat transfer channel. In some embodiments, the first surface is an upper surface of the substrate, and the second surface is a lower surface of the substrate. In some embodiments, the semiconductor package further includes: a heat sink comprising a fin structure attached to the first vapor chamber heat diffuser. In some embodiments, the semiconductor package further includes: a third vapor chamber heat diffuser in thermal contact with the first package assembly, wherein the heat sink is located between the first vapor chamber heat diffuser and the third vapor chamber heat diffuser, and is in thermal contact with the first vapor chamber heat diffuser and the third vapor chamber heat diffuser. In some embodiments, the semiconductor package further includes: a system board; and a plurality of screws passing through the first vapor chamber heat diffuser, the second vapor chamber heat diffuser, and the system board.

[0092] Still other embodiments of the present application provide a method for dissipating heat from a semiconductor package, comprising: providing a packaging structure comprising a substrate, a plurality of first integrated circuit devices mounted on an upper surface of the substrate, and a plurality of second integrated circuit devices mounted on a lower surface of the substrate; setting a first vapor chamber (VC) heat diffuser to be thermally coupled to the first integrated circuit devices; setting a second vapor chamber heat diffuser to be thermally coupled to the second integrated circuit devices; and using one or more heat transfer channels to thermally couple the first vapor chamber heat diffuser and the second vapor chamber heat diffuser so that thermal energy can be transferred from the second vapor chamber heat diffuser to the first vapor chamber heat diffuser.

[0093] In some embodiments, heat generated by the first integrated circuit device during operation is distributed in two dimensions on the first vapor chamber heat spreader, and heat generated by the second integrated circuit device during operation is distributed in two dimensions on the second vapor chamber heat spreader.

[0094] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A semiconductor package, comprising: a substrate having an upper surface and a lower surface; a plurality of first integrated circuit devices mounted on the upper surface; a plurality of second integrated circuit devices mounted on the lower surface; a first vapor chamber heat spreader positioned over the first plurality of integrated circuit devices; a second vapor chamber heat spreader positioned over the plurality of second integrated circuit devices; as well as A heat transfer member thermally couples the first vapor chamber heat diffuser and the second vapor chamber heat diffuser.

2. The semiconductor package according to claim 1, wherein: Each of the first vapor chamber heat spreader and the second vapor chamber heat spreader has a substantially flat plate structure and includes a vapor chamber containing a two-phase vaporizable liquid sealed therein, and Wherein, the heat transfer member is a steam chamber heat transfer channel and has the same structure as the first steam chamber heat diffuser and the second steam chamber heat diffuser.

3. The semiconductor package according to claim 2, wherein: The heat transfer member extends continuously from one of the first and second vapor chamber heat diffusers, and the heat transfer member and the vapor chamber heat diffuser share a single vapor chamber, and wherein a distal end of the heat transfer member is in thermal contact with the other of the first and second vapor chamber heat diffusers via a thermal interface material.

4. The semiconductor package according to claim 2, wherein: The first vapor chamber heat spreader, the second vapor chamber heat spreader, and the heat transfer member are integrally formed and share a single continuous vapor chamber.

5. The semiconductor package according to claim 2, wherein: The heat transfer member is C-shaped or vertically linear.

6. The semiconductor package according to claim 1, further comprising: A plurality of screws pass through the first vapor chamber heat spreader and the second vapor chamber heat spreader.

7. The semiconductor package according to claim 1, further comprising: A heat sink is attached to the first vapor chamber heat spreader.

8. The semiconductor package according to claim 7, wherein: The first vapor chamber heat spreader is in thermal contact with the first integrated circuit device on a first side of the first vapor chamber heat spreader through a thermal interface material, and the heat sink is attached to a second side of the first vapor chamber heat spreader opposite the first side.

9. A semiconductor package, comprising: a substrate having a first surface and a second surface; A plurality of first packaging components mounted on the first surface; a plurality of second packaging components mounted on the second surface; a first vapor chamber heat spreader located above the plurality of first packaged components; as well as A second vapor chamber heat spreader is located above the plurality of second package components, the second vapor chamber heat spreader comprising: main body; as well as A heat transfer channel continuously extends from the body to thermally contact the first vapor chamber heat spreader.

10. A method for dissipating heat from a semiconductor package, comprising: Providing a package structure including a substrate, a plurality of first integrated circuit devices mounted on an upper surface of the substrate, and a plurality of second integrated circuit devices mounted on a lower surface of the substrate; providing a first vapor chamber heat spreader to be thermally coupled to the first integrated circuit device; providing a second vapor chamber heat spreader to be thermally coupled to the second integrated circuit device; as well as The first vapor chamber heat spreader and the second vapor chamber heat spreader are thermally coupled using one or more heat transfer channels such that thermal energy can be transferred from the second vapor chamber heat spreader to the first vapor chamber heat spreader.

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