Perovskite light absorption layer, preparation method and perovskite solar cell

Abstract

The invention provides a perovskite light absorption layer, a preparation method and a perovskite solar cell. The perovskite light absorption layer comprises a perovskite material and a passivation additive. The passivation additive comprises perfluoroalkyl halide and / or perfluoroalkyl sulfonyl fluoride. According to the perovskite light absorption layer provided by the invention, through the addition of the perfluoroalkyl halide and / or perfluoroalkyl sulfonyl fluoride, the dependence on the nitrogen atmosphere when the perovskite light absorption layer is prepared is overcome, and feasibility is provided for large-area preparation and industrial application of the perovskite light absorption layer; moreover, the passivation additive can interact with the defect point location of the perovskite light absorption layer, thereby effectively passivating the iodine vacancy, iodine gap and lead iodine antisite defects on the surface of the perovskite light absorption layer, and effectively improving the photoelectric conversion efficiency of the corresponding perovskite solar cell.

Description

Technical Field

[0001] The present invention belongs to the field of solar energy technology and relates to a solar cell, in particular to a perovskite light-absorbing layer, a preparation method and a perovskite solar cell. Background Art

[0002] Solution-processed halide perovskite semiconductors are mainly used in the photovoltaic field. At present, the laboratory photoelectric conversion efficiency of small-area nitrogen atmosphere perovskite solar cells has approached the theoretical limit of 30%, which is of great significance. Perovskite photovoltaic cell modules have the advantages of rapid production, high efficiency and low cost.

[0003] The preparation of the perovskite light-absorbing layer is mainly carried out in an atmosphere of nitrogen and / or inert gas, which has high requirements for the preparation conditions and requires the installation of expensive atmosphere control equipment. If the nitrogen environment is removed and the perovskite film is assembled in the air, the photoelectric conversion efficiency of the device will decrease and the stability will deteriorate due to the easy phase change of water vapor. Therefore, the key to preparing perovskite solar cell modules in the air is how to reduce the impact of water vapor on the perovskite light-absorbing layer during the preparation process.

[0004] Although the research progress of perovskite materials is changing with each passing day, the instability of its structure and the defects it has are still the core problems that restrict its application potential. For this reason, the passivation of the perovskite light-absorbing layer has been introduced as an effective method to reduce the defect density while improving the photoelectric conversion efficiency and stability. At present, the commonly used methods for passivating the perovskite light-absorbing layer include component adjustment, solvent adjustment, additive adjustment, interface treatment and structural design, so as to improve the quality of the perovskite light-absorbing layer, inhibit the generation of defects and reduce bulk non-radiative recombination. However, there are few studies on methods for preparing perovskite solar cells in air.

[0005] Therefore, it is necessary to provide a perovskite light-absorbing layer, a preparation method and a perovskite solar cell that can avoid the influence of air and obtain an efficient and stable perovskite light-absorbing layer. Summary of the invention

[0006] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a perovskite light absorbing layer, a preparation method and a perovskite solar cell. The perovskite light absorbing layer provided by the present invention not only overcomes the dependence on nitrogen atmosphere when preparing the perovskite light absorbing layer, but also provides a feasibility for large-area preparation and industrial application of the perovskite light absorbing layer; it can also effectively improve the photoelectric conversion efficiency of the corresponding perovskite solar cell.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a perovskite light absorbing layer, wherein raw materials for preparing the perovskite light absorbing layer include a perovskite material and a passivation additive.

[0009] The passivating additive includes perfluorohaloalkane and / or perfluoroalkylsulfonyl fluoride.

[0010] The perovskite light-absorbing layer provided by the present invention not only overcomes the dependence on nitrogen atmosphere when preparing the perovskite light-absorbing layer by using perfluorohaloalkane and / or perfluoroalkylsulfonyl fluoride, but also provides a feasibility for large-scale preparation and industrial application of the perovskite light-absorbing layer; moreover, the fluorine in the passivation additive establishes a strong hydrogen bond with the organic cation in the perovskite material, and with Pb 2+ The ions establish coordination bonds and effectively passivate the iodine vacancies, iodine interstitials and lead-iodine antisite defects on the surface of the perovskite light-absorbing layer by interacting with the defect sites in the perovskite light-absorbing layer, thereby effectively improving the photoelectric conversion efficiency of the corresponding perovskite solar cells.

[0011] Preferably, the passivation additive includes any one of perfluoropropane iodide (HFPI), perfluorobutane iodide (PFBI), perfluorobutylsulfonyl fluoride (PBSF) or perfluorohexylsulfonyl fluoride (PHSF), or a combination of at least two thereof.

[0012] Preferably, the molar ratio of the perovskite material to the passivation additive is 4:1-28:1.

[0013] Preferably, the chemical formula of the perovskite material is ABX3, wherein A includes Cs + , formamidinyl (FA + ) or methylamino (MA + ), any one or a combination of at least two of the following: B includes Pb 2+ , X includes I- and / or Br - .

[0014] In a second aspect, the present invention provides a method for preparing a perovskite light absorbing layer, the preparation method comprising the following steps:

[0015] In an air atmosphere, a perovskite precursor solution is coated on the surface of the substrate, and an annealing treatment is performed after the solvent evaporates to obtain the perovskite light-absorbing layer described in the first aspect;

[0016] The perovskite precursor solution includes a solute and a solvent; the solute includes a perovskite material and a passivation additive.

[0017] The preparation method provided by the present invention can realize the coating of the perovskite precursor solution in an air atmosphere by adding a passivation additive to the perovskite precursor solution, and can obtain a dense and compact perovskite light-absorbing layer through subsequent solvent volatilization and annealing treatment, thereby effectively reducing the defect density.

[0018] Preferably, in the perovskite precursor solution, the concentration of the perovskite material is 0.8 mmol / mL-1.4 mmol / mL.

[0019] Preferably, in the perovskite precursor solution, the concentration of the passivation additive is 0.05 mmol / mL-0.2 mmol / mL.

[0020] Preferably, the solvent includes any one of dimethyl sulfoxide, 2-methoxyethanol, N,N-dimethylformamide, N-methylpyrrolidone or acetonitrile, or a combination of at least two thereof.

[0021] Preferably, the coating method comprises knife coating or slot coating.

[0022] Preferably, the method for volatilizing the solvent includes nitrogen blowing and / or vacuum drying.

[0023] Preferably, the blowing pressure of the nitrogen gas is 0.2MPa-0.6MPa.

[0024] Preferably, the annealing treatment is performed at a temperature of 100° C.-150° C. and for a time of 10 min-20 min.

[0025] In a third aspect, the present invention provides a perovskite solar cell, comprising a stacked transparent conductive layer, a first carrier transport layer, the perovskite light absorbing layer described in the first aspect, a second carrier transport layer and an electrode layer.

[0026] When the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer; or when the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] The perovskite light-absorbing layer provided by the present invention not only overcomes the dependence on nitrogen atmosphere when preparing the perovskite light-absorbing layer by adding perfluorohalogenated alkanes and / or perfluoroalkylsulfonyl fluorides, but also provides a feasibility for large-area preparation and industrial application of the perovskite light-absorbing layer; moreover, the passivating additive can interact with the defect sites of the perovskite light-absorbing layer, effectively passivate the iodine vacancies, iodine interstitials and lead-iodine antisite defects on the surface of the perovskite light-absorbing layer, and effectively improve the photoelectric conversion efficiency of the corresponding perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a scanning electron microscope image of the perovskite light-absorbing layer prepared in Example 2 of the present invention.

[0030] Figure 2 This is the XRD spectrum of the perovskite light-absorbing layer prepared in Example 2 of the present invention.

[0031] Figure 3 This is a current-voltage curve diagram of the perovskite solar cell in Example 2 of the present invention.

[0032] Figure 4 Schematic diagram of the structure of the perovskite solar cell in Example 1 of the present invention.

[0033] Among them: 1, transparent glass substrate; 2, transparent conductive layer; 3, hole transport layer; 4, perovskite light absorption layer; 5, electron transport layer; 6, electrode layer. DETAILED DESCRIPTION

[0034] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0035] A certain embodiment of the present invention provides a perovskite light absorbing layer, wherein raw materials for preparing the perovskite light absorbing layer include a perovskite material and a passivation additive.

[0036] The passivating additive includes perfluorohaloalkane and / or perfluoroalkylsulfonyl fluoride.

[0037] The perovskite light-absorbing layer provided by the present invention not only overcomes the dependence on nitrogen atmosphere when preparing the perovskite light-absorbing layer by using perfluorohaloalkane and / or perfluoroalkylsulfonyl fluoride, but also provides a feasibility for large-scale preparation and industrial application of the perovskite light-absorbing layer; moreover, the fluorine in the passivation additive establishes a strong hydrogen bond with the organic cation in the perovskite material, and with Pb 2+ The ions establish coordination bonds and effectively passivate the iodine vacancies, iodine interstitials and lead-iodine antisite defects on the surface of the perovskite light-absorbing layer by interacting with the defect sites in the perovskite light-absorbing layer, thereby effectively improving the photoelectric conversion efficiency of the corresponding perovskite solar cells.

[0038] In certain embodiments, the passivation additive includes any one of perfluoropropane iodide (HFPI), perfluorobutane iodide (PFBI), perfluorobutylsulfonyl fluoride (PBSF) or perfluorohexylsulfonyl fluoride (PHSF), or a combination of at least two thereof. Typical but non-limiting combinations include a combination of HFPI and PFBI, a combination of PFBI and PBSF, a combination of PBSF and PHSF, a combination of HFPI, PFBI and PBSF, a combination of PFBI, PBSF and PHSF, or a combination of HFPI, PFBI, PBSF and PHSF.

[0039] Taking PHSF as an example, the S=O group in PHSF can bind to the uncoordinated Pb 2+ A strong interaction occurs, which can effectively passivate the iodine vacancies (V I ), iodine gap (V i ) and lead iodine antiposition (Pb I ) defects; PHSF is distributed near the interface of the perovskite light-absorbing layer and can effectively suppress transmission defects and promote energy level matching.

[0040] In some embodiments, the molar ratio of the perovskite material to the passivation additive is 4:1-28:1, for example, 4:1, 5:1, 8:1, 10:1, 12:1, 15:1, 18:1, 20:1, 24:1, 25:1, 27:1 or 28:1, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0041] In some embodiments, the chemical formula of the perovskite material is ABX3, wherein A includes Cs + , formamidinyl (FA + ) or methylamino (MA + ), any one or a combination of at least two of the following: B includes Pb 2+ , X includes I - and / or Br - .

[0042] A certain embodiment of the present invention provides a method for preparing a perovskite light absorbing layer, the preparation method comprising the following steps:

[0043] In an air atmosphere, a perovskite precursor solution is coated on the surface of a substrate, and an annealing treatment is performed after the solvent evaporates to obtain the perovskite light-absorbing layer described in any embodiment;

[0044] The perovskite precursor solution includes a solute and a solvent; the solute includes a perovskite material and a passivation additive.

[0045] The preparation method provided by the present invention can realize the coating of the perovskite precursor solution in an air atmosphere by adding a passivation additive to the perovskite precursor solution, and can obtain a dense and compact perovskite light-absorbing layer through subsequent solvent volatilization and annealing treatment, thereby effectively reducing the defect density.

[0046] In some embodiments, in the perovskite precursor solution, the concentration of the perovskite material is 0.8 mmol / mL-1.4 mmol / mL, for example, it can be 0.8 mmol / mL, 0.9 mmol / mL, 1 mmol / mL, 1.1 mmol / mL, 1.2 mmol / mL, 1.3 mmol / mL or 1.4 mmol / mL, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0047] In some embodiments, in the perovskite precursor solution, the concentration of the passivation additive is 0.05mmol / mL-0.2mmol / mL, for example, it can be 0.05mmol / mL, 0.08mmol / mL, 0.1mmol / mL, 0.12mmol / mL, 0.15mmol / mL, 0.16mmol / mL, 0.18mmol / mL or 0.2mmol / mL, but is not limited to the listed values, and other values ​​not listed in the numerical range are also applicable.

[0048] In certain embodiments, the solvent includes any one of dimethyl sulfoxide (DMSO), 2-methoxyethanol (2-ME), N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP) or acetonitrile (ACN) or a combination of at least two thereof, typical but non-limiting combinations include a combination of DMSO and 2-ME, a combination of DMF, NMP and CAN, a combination of DMSO, DMF, NMP and CAN, or a combination of DMSO, 2-ME, DMF, NMP and CAN.

[0049] In some embodiments, in order to fully dissolve the perovskite material and the passivation additive in the solvent, the solvent and the solute need to be mixed and stirred at a temperature above 40° C. for more than 5 hours.

[0050] In certain embodiments, the coating method includes knife coating or slot coating.

[0051] In certain embodiments, the method of volatilizing the solvent includes nitrogen blowing and / or vacuum drying.

[0052] The nitrogen purge and / or vacuum drying can accelerate the volatilization of the solvent.

[0053] In some embodiments, the blowing pressure of the nitrogen gas is 0.2MPa-0.6MPa, for example, 0.2MPa, 0.3MPa, 0.4MPa, 0.5MPa or 0.6MPa, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0054] Annealing can volatilize the residual solvent and make the perovskite crystals nucleate and grow to form a dense perovskite light-absorbing layer. Annealing at too high or too low a temperature or for too long or too short a time will have an adverse effect on the performance of the perovskite light-absorbing layer.

[0055] In some embodiments, the annealing treatment is performed at a temperature of 100° C.-150° C. and for a time of 10 min-20 min.

[0056] The temperature of the annealing treatment is 100°C-150°C, for example, it can be 100°C, 110°C, 120°C, 130°C, 140°C or 150°C, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0057] The annealing time is 10 min-20 min, for example, 10 min, 12 min, 15 min, 16 min, 18 min or 20 min, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0058] A certain embodiment of the present invention provides a perovskite solar cell, which includes a stacked transparent conductive layer, a first carrier transport layer, the perovskite light absorbing layer described in any embodiment, a second carrier transport layer and an electrode layer.

[0059] When the first carrier transport layer is a hole transport layer (ETL), the second carrier transport layer is an electron transport layer (HTL); or, when the first carrier transport layer is an electron transport layer (HTL), the second carrier transport layer is a hole transport layer (ETL).

[0060] In some embodiments, the perovskite solar cell includes a transparent conductive layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and an electrode layer which are stacked.

[0061] In some embodiments, the material of the transparent conductive layer includes any one of FTO, ITO, AZO, ATO, IGO or BZO, or a combination of at least two of them. Typical but non-limiting combinations include a combination of FTO and ITO, a combination of AZO and ATO, a combination of IGO and BZO, a combination of ATO and Cr, a combination of FTO, ITO and AZO, a combination of ATO, IGO and BZO, or a combination of FTO, ITO, AZO, ATO, IGO and BZO.

[0062] Among them, FTO refers to fluorine-doped tin oxide, ITO refers to indium-doped tin oxide, AZO refers to aluminum-doped zinc oxide, ATO refers to aluminum-doped tin oxide, IGO refers to indium-doped gallium oxide, and BZO refers to boron-doped zinc oxide.

[0063] In some embodiments, the material of the hole transport layer includes any one of nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, 1,1'-bis-4-tolylaminophenyl cyclohexylamine (TAPC), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), PEDOT (poly(3,4-ethylenedioxythiophene)), Poly-TPD (poly(4-butylphenyl diphenylamine)) or 2,2',7,7'-tetrakis(N,N-p-methoxyanilino)-9,9'-spirobifluorene (Spiro-MeOTAD) or a combination of at least two thereof.

[0064] In some embodiments, the thickness of the hole transport layer is 10 nm-30 nm, for example, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0065] In some embodiments, the material of the electron transport layer includes C 60 、(6,6)-phenyl-C 61 - any one or a combination of at least two of butyric acid methyl ester (PCBM), ZnO or MgO, typical but non-limiting combinations include a combination of C60 and PCBM, a combination of PCBM and ZnO, a combination of ZnO and MgO, C 60 , PCBM and ZnO, PCBM, ZnO and MgO, or C 60 , PCBM, ZnO and MgO.

[0066] In some embodiments, the material of the electrode layer includes any one of copper (Cu), aluminum (Al), silver (Ag), nickel (Ni), cobalt (Co), gold (Au), molybdenum (Mo) or chromium (Cr) or a combination of at least two thereof. Typical but non-limiting combinations include a combination of Cu and Al, a combination of Ag and Ni, a combination of Co and Au, a combination of Mo and Cr, or a combination of Cu, Al, Ag, Ni, Co, Au, Mo and Cr.

[0067] Example 1

[0068] This embodiment provides a perovskite solar cell, comprising a transparent conductive layer 2, a hole transport layer 3, a perovskite light absorption layer 4, an electron transport layer 5 and an electrode layer 6 stacked in sequence on a transparent glass substrate 1, with a band gap of 1.55 eV, and a preparation method thereof comprising the following steps:

[0069] (1) A transparent conductive layer 2 is provided on a transparent glass substrate 1, which is scribed by laser P1, then ultrasonically cleaned in isopropyl alcohol for 30 min, dried with nitrogen, and treated with oxygen plasma for 1 min.

[0070] (2) A nickel oxide hole transport layer 3 with a thickness of 20 nm is deposited on the surface of the transparent conductive layer 2 after oxygen plasma treatment.

[0071] (3) In an air atmosphere, a perovskite precursor solution is scraped onto the surface of the hole transport layer 3 at a speed of 25 mm / s, and nitrogen gas is blown at a pressure of 0.6 MPa. After the solvent evaporates, an annealing treatment is performed at 120° C. for 15 min to obtain a perovskite light absorbing layer 4 with a thickness of 600 nm.

[0072] The perovskite precursor solution includes a solute and a solvent, the solvent is N,N-dimethylformamide, and the solute is a perovskite material FA 0.95 Cs 0.05 PbI 2.5 Br 0.5 With the passivation additive PHSF; the concentration of the perovskite material in the perovskite precursor solution is 1.15mmol / mL, and the concentration of the passivation additive is 0.05mmol / L.

[0073] (4) Vacuum deposit a 30 nm thick C 60 , and then SnO2 with a thickness of 12 nm is atomically layer deposited as the electron transport layer 5.

[0074] (5) Laser P2 scribes and penetrates the hole transport layer 3, the perovskite light absorption layer 4 and the electron transport layer 5; then, a 150 nm thick Cu is evaporated by thermal evaporation as the electrode layer 6; finally, laser P3 scribes the conventional electrode layer 6, the hole transport layer 3, the perovskite light absorption layer 4 and the electron transport layer 5, and the following is obtained: Figure 4 A perovskite solar cell is shown.

[0075] Example 2

[0076] This embodiment provides a perovskite solar cell, which is the same as Embodiment 1 except that the concentration of the passivation additive in the perovskite precursor solution is 0.12 mmol / L.

[0077] The scanning electron microscope image of the perovskite light absorbing layer in the perovskite solar cell obtained in this embodiment is as follows: Figure 1 As shown, the XRD spectrum of the perovskite light absorbing layer is as follows Figure 2 As shown, the current-voltage curve is as follows Figure 3 shown.

[0078] Depend on Figure 1 It can be seen that in the perovskite solar cell provided in this embodiment, the perovskite light absorbing layer is dense and the average particle size is about 1.1 μm; Figure 2 It can be seen that the perovskite crystals in the perovskite light-absorbing layer have excellent orientation.

[0079] Example 3

[0080] This embodiment provides a perovskite solar cell, which is the same as Embodiment 1 except that the concentration of the passivation additive in the perovskite precursor solution is 0.2 mmol / L.

[0081] Example 4

[0082] This embodiment provides a perovskite solar cell, which is the same as Embodiment 1 except that the concentration of the passivation additive in the perovskite precursor solution is 0.02 mmol / L.

[0083] Example 5

[0084] This embodiment provides a perovskite solar cell, which is the same as Embodiment 1 except that the concentration of the passivation additive in the perovskite precursor solution is 0.24 mmol / L.

[0085] Example 6

[0086] This embodiment provides a perovskite solar cell, comprising a transparent conductive layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and an electrode layer stacked in sequence on a transparent glass substrate, with a band gap of 1.55 eV, and a preparation method thereof comprising the following steps:

[0087] (1) A transparent conductive layer is provided on a transparent glass substrate, laser P1 is scribed, and then the substrate is ultrasonically cleaned in isopropanol for 30 min, dried with nitrogen, and then treated with oxygen plasma for 1 min.

[0088] (2) A 20 nm thick nickel oxide hole transport layer is deposited on the surface of the transparent conductive layer after oxygen plasma treatment.

[0089] (3) In an air atmosphere, a perovskite precursor solution was scraped onto the surface of the hole transport layer at a speed of 25 mm / s, and nitrogen gas was blown at a pressure of 0.2 MPa. After the solvent evaporated, annealing was performed at 100° C. for 20 min to obtain a perovskite light absorbing layer with a thickness of 600 nm.

[0090] The perovskite precursor solution includes a solute and a solvent, the solvent is N,N-dimethylformamide, and the solute is a perovskite material FA 0.95 Cs 0.05 PbI 2.5 Br 0.5 With the passivation additive PHSF; the concentration of the perovskite material in the perovskite precursor solution is 0.8mmol / mL, and the concentration of the passivation additive is 0.12mmol / L.

[0091] (4) Vacuum deposit a 30 nm thick C60 , and then atomic layer deposition of 12 nm thick SnO2 was used as the electron transport layer.

[0092] (5) Laser P2 scribes and penetrates the hole transport layer, the perovskite light absorption layer, and the electron transport layer; then, Cu with a thickness of 150 nm is evaporated as the electrode layer by thermal evaporation; finally, laser P3 scribes the traditional electrode layer, the hole transport layer, the perovskite light absorption layer, and the electron transport layer to obtain a perovskite solar cell.

[0093] Example 7

[0094] This embodiment provides a perovskite solar cell, comprising a transparent conductive layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and an electrode layer stacked in sequence on a transparent glass substrate, with a band gap of 1.55 eV, and a preparation method thereof comprising the following steps:

[0095] (1) A transparent conductive layer is provided on a transparent glass substrate, laser P1 is scribed, and then the substrate is ultrasonically cleaned in isopropanol for 30 min, dried with nitrogen, and then treated with oxygen plasma for 1 min.

[0096] (2) A 20 nm thick nickel oxide hole transport layer is deposited on the surface of the transparent conductive layer after oxygen plasma treatment.

[0097] (3) In an air atmosphere, a perovskite precursor solution was scraped onto the surface of the hole transport layer at a speed of 25 mm / s, and nitrogen was blown at a pressure of 0.6 MPa. After the solvent evaporated, an annealing treatment was performed at 150° C. for 10 min to obtain a perovskite light absorbing layer with a thickness of 600 nm.

[0098] The perovskite precursor solution includes a solute and a solvent, the solvent is N,N-dimethylformamide, and the solute is a perovskite material FA 0.95 Cs 0.05 PbI 2.5 Br 0.5 With the passivation additive PHSF; the concentration of the perovskite material in the perovskite precursor solution is 1.4mmol / mL, and the concentration of the passivation additive is 0.12mmol / L.

[0099] (4) Vacuum deposit a 30 nm thick C 60 , and then atomic layer deposition of 12 nm thick SnO2 was used as the electron transport layer.

[0100] (5) Laser P2 scribes and penetrates the hole transport layer, the perovskite light absorption layer, and the electron transport layer; then, Cu with a thickness of 150 nm is evaporated as the electrode layer by thermal evaporation; finally, laser P3 scribes the traditional electrode layer, the hole transport layer, the perovskite light absorption layer, and the electron transport layer to obtain a perovskite solar cell.

[0101] Example 8

[0102] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that an equal molar amount of PHSF in the perovskite precursor solution is replaced by PBSF.

[0103] Example 9

[0104] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the PHSF in the perovskite precursor solution is replaced by PFBI in an equal molar amount.

[0105] Example 10

[0106] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the PHSF in the perovskite precursor solution is replaced with HFPI in an equal molar amount.

[0107] Embodiment 11

[0108] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the annealing temperature is 90°C.

[0109] Example 12

[0110] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the annealing temperature is 160°C.

[0111] Embodiment 13

[0112] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the annealing time is 5 minutes.

[0113] Embodiment 14

[0114] This embodiment provides a perovskite solar cell, which is the same as Embodiment 2 except that the annealing time is 25 minutes.

[0115] Comparative Example 1

[0116] This comparative example provides a perovskite solar cell, which is the same as Example 1 except that the concentration of the passivation additive in the perovskite precursor solution is 0 mmol / L, that is, no passivation additive is added to the perovskite precursor solution.

[0117] Performance Characterization

[0118] The perovskite solar cells provided in the above embodiments and comparative examples were subjected to performance tests. During the test, a solar simulator was used to emit a standard sunlight (spectrum AM1.5G, incident power 100 mW / cm 2 , temperature 25℃), test open circuit voltage (V oc , V), short circuit current density (J sc , mA / cm 2 ), photoelectric conversion efficiency (PCE, %) and fill factor (FF), the results are shown in Table 1.

[0119] Table 1

[0120]

[0121] In summary, the perovskite light-absorbing layer provided by the present invention not only overcomes the dependence on nitrogen atmosphere when preparing the perovskite light-absorbing layer by using perfluoroalkyl halide and / or perfluoroalkyl sulfonyl fluoride, but also provides a feasibility for large-scale preparation and industrial application of the perovskite light-absorbing layer; moreover, the fluorine in the passivation additive establishes a strong hydrogen bond with the organic cation in the perovskite material, and with Pb 2+ The ions establish coordination bonds and effectively passivate the iodine vacancies, iodine interstitials and lead-iodine antisite defects on the surface of the perovskite light-absorbing layer by interacting with the defect sites in the perovskite light-absorbing layer, thereby effectively improving the photoelectric conversion efficiency of the corresponding perovskite solar cells.

[0122] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A perovskite light absorbing layer, characterized in that: The raw materials for preparing the perovskite light absorbing layer include perovskite material and passivation additive; The passivating additive includes perfluorohaloalkane and / or perfluoroalkylsulfonyl fluoride.

2. The perovskite light absorbing layer according to claim 1, characterized in that: The passivation additive includes any one of perfluoropropane iodide, perfluorobutane iodide, perfluorobutylsulfonyl fluoride or perfluorohexylsulfonyl fluoride, or a combination of at least two thereof.

3. The perovskite light absorbing layer according to claim 1, characterized in that: The molar ratio of the perovskite material to the passivation additive is 4:1-28:

1.

4. The perovskite light absorbing layer according to any one of claims 1 to 3, characterized in that: The chemical formula of the perovskite material is ABX3, where A includes Cs + , FA + or MA + Any one or a combination of at least two of the following: B includes Pb 2+ , X includes I - and / or Br - .

5. A method for preparing a perovskite light-absorbing layer, characterized in that: The preparation method comprises the following steps: In an air atmosphere, a perovskite precursor solution is coated on the surface of a substrate, and an annealing treatment is performed after the solvent evaporates to obtain the perovskite light-absorbing layer according to any one of claims 1 to 4; The perovskite precursor solution includes a solute and a solvent; the solute includes a perovskite material and a passivation additive.

6. The preparation method according to claim 5, characterized in that: In the perovskite precursor solution, the concentration of the perovskite material is 0.8 mmol / mL-1.4 mmol / mL; and / or, in the perovskite precursor solution, the concentration of the passivation additive is 0.05 mmol / mL-0.2 mmol / mL; And / or, the solvent includes any one of dimethyl sulfoxide, 2-methoxyethanol, N,N-dimethylformamide, N-methylpyrrolidone or acetonitrile, or a combination of at least two thereof.

7. The preparation method according to claim 5, characterized in that: The coating method includes knife coating or slot coating.

8. The preparation method according to claim 5, characterized in that: The method of volatilizing the solvent includes nitrogen blowing and / or vacuum drying; And / or, the blowing pressure of the nitrogen gas blowing is 0.2MPa-0.6MPa.

9. The preparation method according to claim 5, characterized in that: The annealing treatment is performed at a temperature of 100° C. to 150° C. and for a time of 10 min to 20 min.

10. A perovskite solar cell, characterized in that: The perovskite solar cell comprises a stacked transparent conductive layer, a first carrier transport layer, the perovskite light absorbing layer according to any one of claims 1 to 4, a second carrier transport layer and an electrode layer; When the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer; or, When the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer.

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