Perovskite passivation structure, preparation method and battery

Abstract

The invention provides a perovskite passivation structure, a preparation method and a cell, the perovskite passivation structure comprises an electron transport layer and a perovskite light absorption layer which are arranged in sequence, and a passivation layer is arranged between the electron transport layer and the perovskite light absorption layer; the passivation layer comprises a first passivation layer and a second passivation layer; the first passivation layer is one of 2-thiophene ethyl ammonium chloride, phenylethylamine chloride and piperazine iodide, and the thickness of the first passivation layer is 0.1-10 nm; the second passivation layer is a bimolecular passivation layer and comprises sulfur-modified methyl sulfur molecules and diamine molecules, and the thickness of the second passivation layer is 0.1-10 nm. According to the perovskite passivation structure, energy level alignment and passivation defects can be optimized at the same time, the non-radiation load loss is reduced, the open-circuit voltage and the filling factor of a device are improved, and therefore the photoelectric conversion efficiency of the device is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite passivation structure, a preparation method and a battery. Background Art

[0002] Perovskite solar cells have broad application prospects and can be used in many fields such as ground power stations, aviation, construction, wearable power generation devices, etc. In particular, its ability to prepare semi-transparent flexible battery components makes perovskite solar cells have unique advantages in new application fields; in recent years, perovskite solar cells have attracted widespread attention due to their rapid growth in photoelectric conversion efficiency. The excellent performance of perovskite materials can be attributed to their excellent absorption coefficient, good band gap, low exciton binding energy, high charge migration rate and long diffusion distance.

[0003] However, defects at interfaces and between interfaces can induce charge recombination, quenching of photogenerated carriers, and decomposition of perovskites. Moreover, the electron-hole pair recombination between the perovskite film and the adjacent transport layer seriously inhibits the further improvement of the photovoltaic performance of perovskite solar cells. Therefore, the use of defect passivation strategies to eliminate defects in the perovskite film itself and between grain boundaries has been recognized as a key point in obtaining high-efficiency and long-term stability perovskite solar cells; passivators are strategically applied to the interface between the perovskite film and the charge transport layer to mitigate the adverse effects of defects and environmental factors.

[0004] Single-junction perovskite cells have the characteristics of high efficiency, low cost, sustainability and wide application scenarios. The working principle of single-junction perovskite cells is based on the photoelectric conversion effect of perovskite materials; when exposed to light, photons will excite electrons in the perovskite material, causing it to jump from the valence band to the conduction band, forming photogenerated electron and hole pairs; these photogenerated electron and hole pairs will diffuse and separate inside the perovskite material, and eventually be collected and converted into electrical energy as the light absorption layer of the single-junction perovskite cell; perovskite films have an important influence on the performance of inverted single-junction perovskite solar cells; high-quality perovskite films are crucial to reducing interfacial non-radiative recombination caused by defects and interface mismatch energy levels. Therefore, how to effectively improve the quality of perovskite films is the key to improving the performance of single-junction perovskite solar cells.

[0005] In existing perovskite solar cells, the passivation of the perovskite film is usually started from two aspects. One is to form a passivation layer on the surface of the perovskite layer that can reduce the energy level difference, improve the energy level alignment, and provide a driving force for the effective extraction of charges; the other is to reduce the non-radiative carrier recombination center at the interface of the perovskite light-absorbing layer by passivating the perovskite defects. Due to the complex influencing factors between the various functional layers of the perovskite solar cell, it is difficult to improve the perovskite film from both the aspects of reducing the energy level difference and passivating the perovskite defects. Therefore, the development of a perovskite passivation structure that can simultaneously optimize the energy level alignment and passivate defects has become a difficult problem to be solved in the field of perovskite passivation technology at this stage. Summary of the invention

[0006] In view of the problem of interface defects in current perovskite solar cells, the purpose of the present invention is to provide a perovskite passivation structure, a preparation method and a battery, which can simultaneously optimize energy level alignment and passivation defects, reduce non-radiative load losses, and increase the open circuit voltage and fill factor of the device, thereby improving its photoelectric conversion efficiency.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] A first aspect of the present invention is to provide a perovskite passivation structure, comprising an electron transport layer and a perovskite light absorption layer arranged in sequence, wherein a passivation layer is arranged between the electron transport layer and the perovskite light absorption layer;

[0009] The passivation layer includes a first passivation layer and a second passivation layer;

[0010] The first passivation layer is one of 2-thienylethylammonium chloride, phenylethylamine chloride, and piperazine iodide, and has a thickness of 0.1 to 10 nm;

[0011] The second passivation layer is a bimolecular passivation layer, including sulfur-modified methylsulfide molecules and diamine molecules, and has a thickness of 0.1-10 nm.

[0012] Furthermore, the sulfur-modified methylsulfide molecule is 3-methylthio-1-propylamine hydroiodide or 3-(methylmercapto)propionamidine hydrochloride; the diamine molecule is 1,3-propylenediamine hydroiodide or propanebis(imide) dihydrochloride.

[0013] The second aspect of the present invention is to provide a method for preparing the above-mentioned perovskite passivation structure, comprising the following steps:

[0014] S1. Preparing a first passivation layer on the perovskite light absorbing layer;

[0015] S2. Preparing a second passivation layer on the first passivation layer;

[0016] S3. Preparing an electron transport layer on the second passivation layer.

[0017] Furthermore, in the step S1, the first passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

[0018] Furthermore, in step S2, the second passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

[0019] Furthermore, in step S1, the first passivation layer is prepared by a dynamic spin coating method, and the first solution is dynamically spin coated onto the perovskite light absorbing layer, the spin coating speed is 3000-4000 rpm, the spin coating time is 20-30 s, and after the spin coating is completed, the annealing temperature is 100-110° C., and the annealing time is 3-10 min;

[0020] Furthermore, in step S2, the second passivation layer is prepared by dynamic spin coating, and the second solution is dynamically spin coated onto the first passivation layer, the spin coating speed is 4000-6000 rpm, the spin coating time is 15-25 s, and after the spin coating is completed, the annealing temperature is 105-115°C, and the annealing time is 5-10 min.

[0021] Furthermore, in step S1, the concentration of the first solution is 0.5-2 mg / ml.

[0022] Furthermore, in step S2, the second solution is a mixed solution of sulfur-modified methyl sulfide molecules and diamine molecules, wherein the concentration of the sulfur-modified methyl sulfide molecules is 0.5-2 mg / ml, and the concentration of the diamine molecules is 1-4 mg / ml; the solvent is a mixed solvent of chlorobenzene and isopropanol, wherein the volume ratio of chlorobenzene to isopropanol is chlorobenzene:isopropanol=0-1:2.

[0023] The third aspect of the present invention is to provide an inverted perovskite solar cell, wherein the inverted perovskite solar cell is a nip structure, comprising

[0024] Conductive glass;

[0025] a hole transport layer formed on the conductive glass;

[0026] A perovskite passivation structure, wherein the perovskite light absorption layer is arranged close to the hole transport layer; the perovskite passivation structure is the above-mentioned perovskite passivation structure or is prepared by the above-mentioned preparation method;

[0027] A metal electrode is formed on the electron transport layer.

[0028] Compared with the prior art, the present invention has at least the following technical effects:

[0029] 1. The perovskite passivation structure provided by the present invention has a double passivation layer arranged between the electron transport layer and the perovskite light absorbing layer. The first passivation layer can reduce the non-radiative load by optimizing the energy band to reduce the energy level difference between the perovskite light absorbing layer and the electron transport layer, induce the upward shift of the maximum value of the valence band in the perovskite light absorbing layer, thereby improving the energy level alignment and providing a driving force for effective charge extraction; the second passivation layer reduces the occurrence of non-radiative recombination from two aspects of reducing surface recombination and interface recombination through the combined action of sulfur-modified methyl sulfide molecules and diammonium molecules; this effect of reducing non-radiative recombination helps to improve the photoelectric conversion efficiency and stability of perovskite solar cells; compared with the existing Some perovskite passivation technologies improve from a single aspect of reducing energy level differences or passivating perovskite defects. The present invention improves the perovskite film layer from two aspects of reducing energy level differences and passivating perovskite defects by selecting a suitable first passivation layer and a second passivation layer and through the synergistic effect of the first passivation layer and the second passivation layer, thereby reducing non-radiative recombination; through the passivation superposition of the first passivation layer and the second passivation layer, while optimizing the energy level alignment, the chemical passivation of the perovskite light-absorbing layer is completed, the surface recombination and interface recombination of the perovskite light-absorbing layer are reduced, thereby reducing non-radiative recombination losses, further improving the open circuit voltage and fill factor of the device, and improving its photoelectric conversion efficiency.

[0030] 2. The perovskite passivation structure provided by the present invention optimizes the transmission and extraction of carriers through interface engineering, thereby improving the open circuit voltage of the perovskite solar cell; through interface optimization, a significant improvement in the filling factor of the perovskite solar cell is achieved, which can significantly improve the photoelectric conversion efficiency of the perovskite solar cell, and opens up a new path for the development of single-junction perovskite solar cell technology.

[0031] 3. The perovskite passivation structure provided by the present invention can not only effectively improve the efficiency of the inverted perovskite solar cell through the synergistic effect of the first passivation layer and the second passivation layer, but also effectively improve its long-term stability and durability. DETAILED DESCRIPTION

[0032] In order to better understand the present invention, the present invention is further described in detail below in conjunction with specific implementation cases. These embodiments are used to illustrate the main reactions and basic features of the present invention, and are not limited to the following implementation cases. The experimental conditions used in the implementation cases can be further adjusted according to specific requirements, and the unspecified experimental conditions are usually the conditions in conventional experiments.

[0033] The present invention first provides a perovskite passivation structure, comprising

[0034] An electron transport layer and a perovskite light absorbing layer are sequentially arranged, and a passivation layer is arranged between the electron transport layer and the perovskite light absorbing layer;

[0035] The passivation layer is a double layer, including a first passivation layer and a second passivation layer;

[0036] The first passivation layer is one of 2-thienylethylammonium chloride, phenylethylamine chloride, and piperazine iodide, and has a thickness of 0.1 to 10 nm;

[0037] The second passivation layer is a bimolecular passivation layer, including sulfur-modified methylsulfide molecules and diamine molecules, and has a thickness of 0.1-10 nm.

[0038] The first passivation layer can reduce the non-radiative load by optimizing the energy band to reduce the energy level difference between the perovskite light absorbing layer and the electron transport layer, and improve the energy level alignment through appropriate energy shift. This optimization makes the transmission of electrons between the two layers smoother and reduces the energy loss caused by energy level mismatch. Specifically, the first passivation layer can induce the upward shift of the valence band maximum in the perovskite light absorbing layer, thereby improving the energy level alignment and providing a driving force for effective charge extraction. The first passivation layer can also strengthen the direct interaction between the perovskite light absorbing layer and the electron transport layer. This interaction helps the effective transmission of electrons between the perovskite light absorbing layer and the electron transport layer, reducing the loss of electrons during the transmission process.

[0039] The second passivation layer uses two molecules with different functions. One is sulfur-modified methyl sulfide molecules, which can provide chemical passivation. Through its interaction with the defect sites on the perovskite surface, it forms chemical bonds, thereby effectively reducing the number of surface defects. This chemical passivation can reduce the rate of surface recombination and reduce the energy loss caused by surface defects. By introducing sulfur-modified methyl sulfide molecules, the photoluminescence quantum yield of perovskite solar cells can be significantly improved, and the loss of photoluminescence quantum yield can be reduced. This helps to improve the open circuit voltage (Voc) and fill factor (FF) of perovskite solar cells, thereby improving the power conversion efficiency (PCE). The other is diamine molecules. Diamine molecules have the function of repelling minority carriers. Through the field effect passivation effect, they can Reduce contact-induced interfacial recombination; diammonium molecules form a barrier between the perovskite and the electron transport layer, effectively preventing the diffusion of minority carriers from the perovskite light-absorbing layer to the electron transport layer, thereby reducing the occurrence of interfacial recombination; the introduction of diammonium molecules can significantly extend the lifetime of carriers and improve the carrier transport efficiency; this helps to further improve the power conversion efficiency (PCE) of perovskite solar cells and to a certain extent enhances the working stability of perovskite solar cells; the second passivation layer reduces the occurrence of non-radiative recombination from two aspects, namely, reducing surface recombination and interface recombination, through the combined action of sulfur-modified methyl sulfide molecules and diammonium molecules; this effect of reducing non-radiative recombination helps to improve the photoelectric conversion efficiency and stability of perovskite solar cells.

[0040] The present invention provides a double passivation layer between the electron transport layer and the perovskite light absorbing layer, wherein the first passivation layer is selected from one of 2-thiopheneethylammonium chloride, phenylethylamine chloride, and piperazine iodide, and the second passivation layer is a bimolecular passivation layer, comprising sulfur-modified methylsulfide molecules and diamine molecules; through the synergistic effect of the first passivation layer and the second passivation layer, the perovskite film layer can be improved from two aspects of reducing energy level differences and passivating perovskite defects, thereby reducing non-radiative recombination; through the passivation superposition of the first passivation layer and the second passivation layer, while optimizing energy level alignment, the chemical passivation of the perovskite light absorbing layer is completed, the surface recombination and interface recombination of the perovskite light absorbing layer are reduced, thereby reducing non-radiative recombination losses, and further improving the device opening. The circuit voltage and fill factor can be increased to improve its photoelectric conversion efficiency; if the thickness of the passivation layer is set too large, it will have an adverse effect on the carrier extraction process, increase the carrier transmission resistance, and block the extraction of carriers to a certain extent; if the thickness of the passivation layer is set too small, although it will not hinder the extraction of carriers, the built-in electric field generated thereby will not be sufficient to achieve effective charge separation and extraction; the intensity of the electric field has a direct impact on the separation and extraction efficiency of carriers, and a too small thickness will not be able to give full play to the effect of this potential field, thereby affecting the overall performance; setting the thickness of the first passivation layer and the second passivation layer to 0.1 to 10 nm can significantly improve the separation and extraction efficiency of carriers at the interface and improve the performance of the battery.

[0041] Furthermore, the sulfur-modified methylsulfide molecule is 3-methylthio-1-propylamine hydroiodide or 3-(methylmercapto)propionamidine hydrochloride; the diamine molecule is 1,3-propylenediamine hydroiodide or propanebis(imide) dihydrochloride.

[0042] Secondly, the present invention provides a method for preparing the above-mentioned perovskite passivation structure, comprising the following steps:

[0043] S1. Preparing a first passivation layer on the perovskite light absorbing layer;

[0044] S2. Preparing a second passivation layer on the first passivation layer;

[0045] S3. Preparing an electron transport layer on the second passivation layer.

[0046] Furthermore, in step S1, the first passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

[0047] Furthermore, in step S2, the second passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

[0048] Furthermore, in step S1, the first passivation layer is prepared by a dynamic spin coating method, and the first solution is dynamically spin coated onto the perovskite light absorbing layer, the spin coating speed is 3000-4000 rpm, the spin coating time is 20-30 s, and after the spin coating is completed, the annealing temperature is 100-110° C., and the annealing time is 3-10 min;

[0049] Furthermore, in step S2, the second passivation layer is prepared by dynamic spin coating, and the second solution is dynamically spin coated onto the first passivation layer, the spin coating speed is 4000-6000 rpm, the spin coating time is 15-25 s, and after the spin coating is completed, the annealing temperature is 105-115°C, and the annealing time is 5-10 min.

[0050] Furthermore, in step S1, the concentration of the first solution is 0.5-2 mg / ml.

[0051] Furthermore, in step S2, the second solution is a mixed solution of sulfur-modified methyl sulfide molecules and diamine molecules, wherein the concentration of the sulfur-modified methyl sulfide molecules is 0.5-2 mg / ml, and the concentration of the diamine molecules is 1-4 mg / ml; the solvent is a mixed solvent of chlorobenzene and isopropanol, wherein the volume ratio of chlorobenzene to isopropanol is chlorobenzene:isopropanol=0-1:2.

[0052] The present invention also provides an inverted perovskite solar cell, which is a pin structure and includes

[0053] Conductive glass;

[0054] a hole transport layer formed on the conductive glass;

[0055] A perovskite passivation structure, wherein the perovskite light absorption layer is arranged close to the hole transport layer; the perovskite passivation structure is the above-mentioned perovskite passivation structure or is prepared by the above-mentioned preparation method;

[0056] The metal electrode is formed on the electron transport layer.

[0057] The above solution is further described below in conjunction with specific embodiments.

[0058] Example 1

[0059] The inverted perovskite solar cell of this embodiment is specifically prepared as follows:

[0060] (1) Cleaning ITO glass: Use the purchased 1.5x1.5cm 2 The ITO glass was cleaned with conductive glass cleaning liquid, pure water, and ethanol, and then dried with a nitrogen air gun for later use.

[0061] (2) Preparation of hole transport layer: 1 mL of deionized water was added to a glass bottle containing 10 mg of NiOx powder to prepare a 10 mg / mL NiOx dispersion. The glass bottle was placed in an ultrasonic cleaner and ultrasonicated for 40 min to ensure that the NiOx powder was fully dispersed in the deionized water for later use. Dissolve 1 mg Me-4PACz solid powder in 2 mL ethanol (EA) to prepare a 0.5 mg / ml solution, stir for 5 hours and set aside; treat the ITO glass cleaned in step (1) with ultraviolet ozone for 20 minutes; spin-coat 10 mg / mL NiOx dispersion on the ITO glass surface at a spin-coating speed of 2000 rpm for 30 seconds, and anneal at 120°C for 20 minutes. After annealing, spin-coat 0.5 mg / m Me-4PACz solution on the Ni0x surface at a spin-coating speed of 4000 rpm for 30 seconds, and then anneal at 100°C for 10 minutes to obtain a hole transport layer (NiOx and Me-4PACz);

[0062] (3) Preparation of perovskite light absorbing layer: 1.0M FA 0.9 Cs 0.1 PbI3; Perovskite precursor solution: dissolve formamidine hydroiodide (FAI), cesium iodide (CsI) and lead iodide (PbI2) in a mixed solvent of DMF and DMSO (v / v=4:1) in a stoichiometric ratio, stir at room temperature for 6 hours, and then filter using a 0.45um syringe for later use; spin-coat the prepared perovskite precursor solution on the surface of the hole transport layer prepared in step (2), and the spin-coating process is divided into two stages. In the first stage, the rotation speed is 1000rpm and the time is 8s; in the second stage, the rotation speed is 4000rpm and the time is 25s. Five seconds before the end, the anti-solvent anisole is coated on the perovskite surface, followed by an annealing process. The annealing temperature is 110°C and the annealing time is 20min. After annealing, a perovskite light absorption layer of about 500nm is formed;

[0063] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 0.5 mg / ml and the solvent is isopropanol;

[0064] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0065] (6) Preparation of electron transport layer: A 20 nm thick C layer was deposited on the second passivation layer prepared in step (5). 60 Then, in the prepared C 60 The electron transport layer was prepared by evaporating 6 nm thick BCP (bathocuproin) on the surface;

[0066] (7) Preparation of metal electrode: Silver with a thickness of about 100 nm was evaporated on the electron transport layer prepared in step (6) as a metal electrode to obtain the inverted perovskite solar cell of this embodiment, which was denoted as Z1.

[0067] Example 2

[0068] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0069] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 2.0 mg / ml and the solvent is isopropanol;

[0070] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0071] The inverted perovskite solar cell prepared in this example is denoted as Z2.

[0072] Example 3

[0073] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0074] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0075] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0076] The inverted perovskite solar cell prepared in this example is denoted as Z3.

[0077] Example 4

[0078] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0079] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing is performed at 105° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml, and the solvent is isopropanol;

[0080] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0081] The inverted perovskite solar cell prepared in this example is denoted as Z4.

[0082] Example 5

[0083] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0084] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing was performed at 100° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml, and the solvent is isopropanol;

[0085] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0086] The inverted perovskite solar cell prepared in this example is denoted as Z5.

[0087] Example 6

[0088] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0089] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3500 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0090] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0091] The inverted perovskite solar cell prepared in this example is denoted as Z6.

[0092] Example 7

[0093] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0094] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 4000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0095] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0096] The inverted perovskite solar cell prepared in this example is denoted as Z7.

[0097] Example 8

[0098] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0099] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 5 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0100] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0101] The inverted perovskite solar cell prepared in this example is denoted as Z8.

[0102] Example 9

[0103] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0104] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 10 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml, and the solvent is isopropanol;

[0105] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0106] The inverted perovskite solar cell prepared in this example is denoted as Z9.

[0107] Example 10

[0108] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0109] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 20 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml, and the solvent is isopropanol;

[0110] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0111] The inverted perovskite solar cell prepared in this example is denoted as Z10.

[0112] Embodiment 11

[0113] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0114] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 25 s. After the spin-coating, annealing is performed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml, and the solvent is isopropanol;

[0115] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0116] The inverted perovskite solar cell prepared in this example is denoted as Z11.

[0117] Example 12

[0118] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0119] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0120] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 0.5 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0121] The inverted perovskite solar cell prepared in this example is denoted as Z12.

[0122] Example 13

[0123] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0124] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0125] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing at 100° C. for 5 min was performed to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 1.5 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0126] The inverted perovskite solar cell prepared in this example is denoted as Z13.

[0127] Embodiment 14

[0128] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0129] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0130] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 1 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0131] The inverted perovskite solar cell prepared in this example is denoted as Z14.

[0132] Embodiment 15

[0133] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0134] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0135] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing at 100° C. for 5 min was performed to obtain a second passivation layer; wherein the second solution is a mixed solution of 3 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0136] The inverted perovskite solar cell prepared in this example is denoted as Z15.

[0137] Example 16

[0138] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0139] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0140] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 4 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0141] The inverted perovskite solar cell prepared in this example is denoted as Z16.

[0142] Embodiment 17

[0143] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0144] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0145] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 8 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0146] The inverted perovskite solar cell prepared in this example is denoted as Z17.

[0147] Embodiment 18

[0148] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0149] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0150] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 10 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0151] The inverted perovskite solar cell prepared in this example is denoted as Z18.

[0152] Embodiment 19

[0153] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0154] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0155] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 105° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0156] The inverted perovskite solar cell prepared in this example is denoted as Z19.

[0157] Embodiment 20

[0158] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0159] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0160] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing at 110° C. for 5 min was performed to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0161] The inverted perovskite solar cell prepared in this example is denoted as Z20.

[0162] Embodiment 21

[0163] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0164] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0165] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 4000 r and a spin-coating time of 20 s. After the spin-coating, annealing at 100° C. for 5 min was performed to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0166] The inverted perovskite solar cell prepared in this example is denoted as Z21.

[0167] Embodiment 22

[0168] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0169] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0170] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 6000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0171] The inverted perovskite solar cell prepared in this example is denoted as Z22.

[0172] Embodiment 23

[0173] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0174] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0175] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 15 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0176] The inverted perovskite solar cell prepared in this example is denoted as Z23.

[0177] Embodiment 24

[0178] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0179] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0180] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 25 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0181] The inverted perovskite solar cell prepared in this example is denoted as Z24.

[0182] Embodiment 25

[0183] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0184] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0185] (5) Preparation of a second passivation layer: dynamically spin-coating a second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is isopropanol;

[0186] The inverted perovskite solar cell prepared in this example is denoted as Z25.

[0187] Embodiment 26

[0188] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0189] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0190] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 8 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:2;

[0191] The inverted perovskite solar cell prepared in this example is denoted as Z26.

[0192] Embodiment 27

[0193] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0194] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 1.5 mg / ml phenylethylamine chloride solution and the solvent is isopropanol;

[0195] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0196] The inverted perovskite solar cell prepared in this example is denoted as Z27.

[0197] Embodiment 28

[0198] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0199] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 0.5 mg / ml phenylethylamine chloride solution and the solvent is isopropanol;

[0200] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0201] The inverted perovskite solar cell prepared in this example is denoted as Z28.

[0202] Embodiment 29

[0203] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0204] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2.0 mg / ml phenylethylamine chloride solution and the solvent is isopropanol;

[0205] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0206] The inverted perovskite solar cell prepared in this example is denoted as Z29.

[0207] Embodiment 30

[0208] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0209] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a piperazine iodide solution with a concentration of 0.5 mg / ml and the solvent is isopropanol;

[0210] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0211] The inverted perovskite solar cell prepared in this example is denoted as Z30.

[0212] Embodiment 31

[0213] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0214] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a piperazine iodide solution with a concentration of 2 mg / ml and the solvent is isopropanol;

[0215] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0216] The inverted perovskite solar cell prepared in this example is denoted as Z31.

[0217] Embodiment 32

[0218] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0219] (4) Preparation of the first passivation layer: dynamically spin-coating the first solution onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, annealing at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a piperazine iodide solution with a concentration of 1 mg / ml and the solvent is isopropanol;

[0220] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0221] The inverted perovskite solar cell prepared in this example is denoted as Z32.

[0222] Embodiment 33

[0223] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0224] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0225] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 1 mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0226] The inverted perovskite solar cell prepared in this example is denoted as Z33.

[0227] Embodiment 34

[0228] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0229] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0230] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2 mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0231] The inverted perovskite solar cell prepared in this example is denoted as Z34.

[0232] Embodiment 35

[0233] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0234] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0235] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 4 mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0236] The inverted perovskite solar cell prepared in this example is denoted as Z35.

[0237] Embodiment 36

[0238] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0239] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0240] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4) at a spin-coating speed of 5000 r for 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 0.5 mg / ml propane bis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0241] The inverted perovskite solar cell prepared in this example is denoted as Z36.

[0242] Embodiment 37

[0243] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0244] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0245] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 1.0 mg / ml propane bis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0246] The inverted perovskite solar cell prepared in this example is denoted as Z37.

[0247] Embodiment 38

[0248] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0249] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0250] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing at 100° C. for 5 min was performed to obtain a second passivation layer; wherein the second solution is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml propane bis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0251] The inverted perovskite solar cell prepared in this example is denoted as Z38.

[0252] Embodiment 39

[0253] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0254] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0255] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), at a spin-coating speed of 5000 r and a spin-coating time of 20 s. After the spin-coating, annealing was performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 1 mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2 mg / ml propanebis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0256] The inverted perovskite solar cell prepared in this example is denoted as Z39.

[0257] Embodiment 40

[0258] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0259] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0260] (5) Preparation of a second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), the spin-coating speed being 5000 r, the spin-coating time being 20 s, and after the spin-coating is completed, annealing is performed at 100° C. for 5 min to obtain a second passivation layer; wherein the second solution is a mixed solution of 2 mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2 mg / ml propanebis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol, the ratio being 1:1;

[0261] The inverted perovskite solar cell prepared in this example is denoted as Z40.

[0262] Embodiment 41

[0263] The difference between this embodiment and embodiment 1 is that the preparation of the first passivation layer and the second passivation layer is different, specifically:

[0264] (4) Preparation of the first passivation layer: The first solution is dynamically spin-coated onto the perovskite light-absorbing layer obtained in step (3) at a spin-coating speed of 3000 r for 30 s. After the spin-coating, the solution is annealed at 110° C. for 3 min to obtain the first passivation layer; wherein the first solution is a 2-thiopheneethylammonium chloride solution with a concentration of 1.5 mg / ml and the solvent is isopropanol;

[0265] (5) Preparation of the second passivation layer: dynamically spin-coating the second solution onto the first passivation layer obtained in step (4), the spin-coating speed is 5000r, the spin-coating time is 20s, and after the spin-coating is completed, annealing is performed at 100°C for 5min to obtain the second passivation layer; wherein the second solution is a mixed solution of 4mg / ml 3-(methylmercapto)propionamidine hydrochloride and 2mg / ml propanebis(imide) dihydrochloride, and the solvent is a mixed solvent of chlorobenzene and isopropanol, the ratio being 1:1;

[0266] The inverted perovskite solar cell prepared in this example is denoted as Z41.

[0267] Comparative Example 1

[0268] The difference between this comparative example and Example 1 is that the second passivation layer is not prepared, and the electron transport layer is directly evaporated on the upper surface of the annealed first passivation layer, and the preparation parameters of each layer are exactly the same as those in Example 1;

[0269] The prepared inverted perovskite solar cell is recorded as D1.

[0270] Comparative Example 2

[0271] The difference between this comparative example and Example 1 is that the first passivation layer is not prepared, the second solution is spin-coated on the upper surface of the annealed perovskite light-absorbing layer to prepare the second passivation layer, and the electron transport layer is evaporated on the upper surface of the annealed second passivation layer, and the preparation parameters of each layer are exactly the same as those in Example 1:

[0272] The prepared inverted perovskite solar cell is recorded as D2.

[0273] Comparative Example 3

[0274] The difference between this comparative example and Example 1 is that the first passivation layer and the second passivation layer are not prepared, and the electron transport layer is directly evaporated on the upper surface of the annealed perovskite light absorbing layer, and the preparation parameters of each layer are exactly the same as those in Example 1;

[0275] The prepared inverted perovskite solar cell is recorded as D3.

[0276] Comparative Example 4

[0277] The difference between this comparative example and Example 1 is that the first solution in step (4) is a 0.5 mg / ml tripyridine solution.

[0278] The prepared inverted perovskite solar cell is recorded as D4.

[0279] Comparative Example 5

[0280] The difference between this comparative example and Example 1 is that the first solution in step (4) is a 0.5 mg / ml 4-fluorophenethylammonium iodide solution.

[0281] The prepared inverted perovskite solar cell is recorded as D5.

[0282] Comparative Example 6

[0283] The difference between this comparative example and Example 1 is that the second solution in step (5) is a mixed solution of 2.8 mg / ml propylamine hydroiodide and 2 mg / ml 1,3-propylenediamine hydroiodide, and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0284] The prepared inverted perovskite solar cell is recorded as D6.

[0285] Comparative Example 7

[0286] The difference between this comparative example and Example 1 is that the second solution in step (5) is a mixed solution of 2.8 mg / ml 3-methylthio-1-propylamine hydroiodide and 2 mg / ml ethylenediamine hydroiodide (ethylenediamine iodide), and the solvent is a mixed solvent of chlorobenzene and isopropanol in a ratio of 1:1;

[0287] The prepared inverted perovskite solar cell is recorded as D7.

[0288] 1. Efficiency

[0289] A solar simulator was used to calibrate the intensity of a standard sun and to measure the intensity of a standard sun with an area of ​​0.1 cm. 2 The devices obtained in the above embodiments and comparative examples were subjected to IV tests, including photoelectric conversion efficiency (PCE), fill factor (FF), open circuit voltage (Voc) and short circuit current (Jsc), with the starting voltage set to 1.5V, the cut-off voltage set to -0.05V, the test step length set to 0.02, and the results retained two decimal places. The test results are shown in Table 1:

[0290] Table 1. Efficiency of Examples 1 to 41 and Comparative Examples 1 to 7

[0291]

[0292]

[0293] By analyzing the data in Table 1 and comparing Z1 to Z41 with D3, it can be seen that when the perovskite passivation structure of the present invention is used for an inverted perovskite solar cell, compared with a perovskite solar cell without a passivation structure, its filling factor, open circuit voltage, short circuit current, and photoelectric conversion efficiency are all improved, and the photoelectric conversion efficiency is greatly improved, about 20%, among which the photoelectric conversion efficiency of Z3 is 25.41, an increase of 22%, indicating that the perovskite passivation structure prepared by the preparation process in Example 3 of the present invention is the best, that is, the passivation structure preparation parameters in Example 3 of the present invention are the best parameters; while the existing perovskite passivation structure is often improved by only reducing the energy level difference or passivating the perovskite defects, that is, only using a passivation layer with the same function as the first passivation layer or the second passivation layer to passivate the perovskite light absorbing layer, such as Comparative Example 1 and Comparative Example 2, by comparing D1~D2 and D3, it can be seen that only using a single-function passivation layer to passivate the perovskite light absorbing layer, its filling factor, open circuit voltage, short circuit current, and photoelectric conversion efficiency are only slightly improved, and the photoelectric conversion efficiency is only improved by The result showed that the first solution was increased by about 8%; in Comparative Examples 4 and 5, the inventor replaced the first solution with a tripyridine solution and a 4-fluorophenethyl iodide ammonium solution with the same concentration and the same passivation principle as the first passivation layer, and the other preparation parameters were exactly the same as the preparation parameters of the first passivation layer of the present invention, but the double-layer passivation structure prepared was used for perovskite solar cells D4 and D5, and the photoelectric conversion efficiency thereof was compared with the perovskite solar cells D1 and D2 prepared in Comparative Examples 1 and 2. The photoelectric conversion efficiency did not increase but decreased, indicating that the influencing factors between the functional layers are complex and it is difficult to further improve the efficiency of the inverted perovskite solar cell by combining two passivation layers with different passivation principles. Comparative Examples 6 and 5 The same is true for Example 7. The inventor replaced 3-methylthio-1-propylamine hydroiodide in the second solution with propylamine hydroiodide having the same passivation function to obtain D6, and replaced 1,3-propylenediamine hydroiodide in the second solution with ethylenediamine hydroiodide (ethylenediamine iodide) having the same passivation function to obtain D7. Its photoelectric conversion efficiency is not increased but decreased compared with D1 and D2, which further illustrates that the combination of the passivation layers of the two passivation principles is likely to cause negative effects between the functional layers, reducing the efficiency of the perovskite solar cell. It can be seen that the perovskite passivation structure in the present invention can only have a first passivation layer of 2-thiopheneethylammonium chloride, phenylethylamine chloride, and piperazine iodide. The second passivation layer can only be a combination of sulfur-modified methylsulfide molecules and diamine molecules, the sulfur-modified methylsulfide molecules are 3-methylthio-1-propylamine hydroiodide or 3-(methylthio)propionamidine hydrochloride, and the diamine molecules are 1,3-propylenediamine hydroiodide or propanebis(imide) dihydrochloride; the efficiency improvement effect of the passivation structure device of the present invention cannot be achieved by using other first passivation layers or second passivation layers for combination; the perovskite passivation structure provided by the present invention, the synergistic effect of the components of the first passivation layer and the second passivation layer can significantly improve the voltage, efficiency and other performances of the perovskite battery device, making the present invention of great significance to promoting the widespread application and sustainable development of green energy. .

[0294] 2. Long-term stability and durability

[0295] Z1~Z41 and D1~D7 were placed in the glove box for 300 hours and then retested. The performance test results are shown in Table 2.

[0296] Table 2. Efficiency of Examples 1 to 41 and Comparative Examples 1 to 7 after 300 hours

[0297]

[0298]

[0299] By comparing Z1~Z41 and D1~D7 after 300h in Table 2, it can be found that after 300h, the inverted perovskite solar cell of the present invention still has a relatively high fill factor, open circuit voltage, short circuit current and photoelectric conversion efficiency, among which Z3 has the best stability, further indicating that the inverted perovskite solar cell prepared in Example 3 of the present invention is not only more efficient but also more stable, so the preparation parameters of the inverted perovskite solar cell of Example 3 are the most preferred; while the various performances of Comparative Examples 1~7 are significantly reduced, indicating that the perovskite passivation structure of the present invention can further ensure the long-term stability and durability of the perovskite solar cell.

[0300] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent transformation or modification made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A perovskite passivation structure, comprising an electron transport layer and a perovskite light absorption layer arranged in sequence, wherein a passivation layer is arranged between the electron transport layer and the perovskite light absorption layer, characterized in that: The passivation layer includes a first passivation layer and a second passivation layer; The first passivation layer is one of 2-thienylethylammonium chloride, phenylethylamine chloride, and piperazine iodide, and has a thickness of 0.1 to 10 nm; The second passivation layer is a bimolecular passivation layer, including sulfur-modified methylsulfide molecules and diamine molecules, and has a thickness of 0.1-10 nm.

2. The perovskite passivation structure according to claim 1, characterized in that: The sulfur-modified methylsulfide molecule is 3-methylthio-1-propylamine hydroiodide or 3-(methylmercapto)propionamidine hydrochloride; the diamine molecule is 1,3-propylenediamine hydroiodide or propanebis(imide) dihydrochloride.

3. A method for preparing a perovskite passivation structure according to any one of claims 1 to 2, characterized in that: The following steps are involved: S1. Preparing a first passivation layer on the perovskite light absorbing layer; S2. Preparing a second passivation layer on the first passivation layer; S3. Preparing an electron transport layer on the second passivation layer.

4. The method for preparing a perovskite passivation structure according to claim 3, characterized in that: In the step S1, the first passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

5. The method for preparing a perovskite passivation structure according to claim 3, characterized in that: In the step S2, the second passivation layer is prepared by a dynamic spin coating method, a static spin coating method, a slit coating method, a spray coating method or an inkjet printing method.

6. The method for preparing a perovskite passivation structure according to claim 3, characterized in that: In the step S1, the first passivation layer is prepared by a dynamic spin coating method, and the first solution is dynamically spin coated onto the perovskite light absorbing layer, the spin coating speed is 3000-4000 rpm, the spin coating time is 20-30 s, and after the spin coating is completed, the annealing temperature is 100-110° C., and the annealing time is 3-10 min.

7. The method for preparing a perovskite passivation structure according to claim 3, characterized in that: In step S2, the second passivation layer is prepared by dynamic spin coating, and the second solution is dynamically spin coated onto the first passivation layer, the spin coating speed is 4000-6000 rpm, the spin coating time is 15-25 s, and after the spin coating is completed, the annealing temperature is 105-115° C., and the annealing time is 5-10 min.

8. The method for preparing a perovskite passivation structure according to claim 6, characterized in that: In the step S1, the concentration of the first solution is 0.5-2 mg / ml.

9. The method for preparing a perovskite passivation structure according to claim 7, characterized in that: In step S2, the second solution is a mixed solution of sulfur-modified methyl sulfide molecules and diamine molecules, wherein the concentration of the sulfur-modified methyl sulfide molecules is 0.5-2 mg / ml, and the concentration of the diamine molecules is 1-4 mg / ml; the solvent is a mixed solvent of chlorobenzene and isopropanol, wherein the volume ratio of chlorobenzene to isopropanol is chlorobenzene:isopropanol=0-1:

2.

10. An inverted perovskite solar cell, characterized in that: The inverted perovskite solar cell is a nip structure, comprising Conductive glass; a hole transport layer formed on the conductive glass; A perovskite passivation structure, wherein the perovskite light absorption layer is arranged close to the hole transport layer; the perovskite passivation structure is the perovskite passivation structure according to claims 1 to 2 or is prepared by the preparation method according to claims 3 to 9; A metal electrode is formed on the electron transport layer.

Images