Preparation process of current-mode bigrid regulation and control one-way section current interception composite light-emitting device

Abstract

The invention discloses a preparation process of a current-type bigrid regulation and control one-way node current interception composite light-emitting device. The preparation process comprises the following steps: preparing a first electrode, a first grid regulation and control electrode and a second grid regulation and control electrode on a substrate; preparing a first transmission layer on the first electrode; preparing a first regulation and control layer on the first transmission layer and the first grid regulation and control electrode; preparing a second transmission layer on the first regulation and control layer; preparing a light-emitting functional layer on the second transmission layer; preparing a third transmission layer on the light-emitting function layer, and preparing a second regulation and control layer on the third transmission layer and the second grid regulation and control electrode; and preparing a fourth transmission layer on the second regulation and control layer, and preparing a second electrode on the fourth transmission layer. The polarities of charges corresponding to the transmission layer and the regulation and control layer on the same side are opposite, so that when corresponding voltage is applied to the regulation and control electrode, the mobility of carriers between the transmission layers on the same side can be adjusted, and the light-emitting efficiency and / or the light-emitting brightness of the light-emitting device can be adjusted. According to the light-emitting device, flexible and efficient grid regulation and control can be carried out.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a preparation process of a current-type double-gate regulated unidirectional junction-cutoff composite light-emitting device. Background Art

[0002] Light-emitting devices in optoelectronic displays are an important component of display devices. They present images or information by emitting light. The light-emitting principle of many light-emitting devices is based on the fact that after power is turned on, electrons and holes combine in the light-emitting layer to form excitons, and when the excitons recombine, they release energy and emit light, such as QLED (quantum dot light-emitting diode) and OLED (organic light-emitting diode). These light-emitting devices have the advantages of rich color performance, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection. Due to process conditions and material properties, there are natural and difficult-to-eliminate differences in the mobility of electrons and holes, resulting in a serious imbalance of charge carriers in the light-emitting layer of the light-emitting device. This imbalance not only makes it difficult for charge carriers in the free state to achieve the ideal efficiency when they recombine, but also has a serious negative impact on the luminescence performance of the entire device. Different functional layers and quantum dots are usually used to obtain the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs.

[0003] Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these light-emitting devices to achieve the regulation of carrier mobility and the regulation of luminous efficiency, which helps to improve the luminous efficiency. However, in the prior art, the control gate will cause carrier diversion or electric field shielding during current injection or the construction of the built-in electric field, which will affect the effective injection of the regulated carriers and cause the failure of efficient regulation. At the same time, the gate regulation of the prior art is generally single-ended, but single-ended regulation is difficult to balance the adjustment of luminous efficiency and luminous brightness, so it is not flexible enough. Therefore, there is a lack of a gate light-emitting device and a corresponding preparation process that can be efficiently and flexibly regulated. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a current-type dual-gate regulated unidirectional junction-cutoff composite light-emitting device preparation process, aiming to provide a highly efficient and flexible gate-regulated light-emitting device and its preparation process.

[0005] To achieve the above-mentioned purpose, the present invention discloses a process for preparing a current-type dual-gate regulated unidirectional junction cutoff composite light-emitting device, the process comprising:

[0006] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode;

[0007] Step S2, covering the first electrode with a first type A carrier material layer by thin film deposition, and performing photolithography on the first type A carrier material layer to form a first transmission layer to cover the first electrode;

[0008] Step S3, covering the first type B carrier material layer on the first transmission layer and the first gate control electrode by thin film deposition, performing photolithography on the first type B carrier material layer, and forming a first control layer on the first transmission layer and the first gate control electrode; wherein the type A carrier and the type B carrier carry opposite charges;

[0009] Step S4, covering the first regulating layer with a second type A carrier material layer by thin film deposition, and performing photolithography on the second type A carrier material layer to form a second transport layer;

[0010] Step S5: preparing a light-emitting functional layer on the second transmission layer according to the type of the light-emitting device;

[0011] Step S6, covering the light-emitting functional layer with a second type B carrier material layer by thin film deposition, and performing photolithography on the second type B carrier material layer to form a third transport layer;

[0012] Step S7, covering the third type A carrier material layer on the third transmission layer and the second gate control electrode by thin film deposition, performing photolithography on the third type A carrier material layer, and forming a second control layer on the third transmission layer and the second gate control electrode;

[0013] Step S8, covering the second regulating layer with a third type B carrier material layer by thin film deposition, and performing photolithography on the third type B carrier material layer to form a fourth transport layer;

[0014] Step S9, coating a second conductive layer on the fourth transmission layer, and photolithography the second conductive layer to form a second electrode; wherein, when the first gate control electrode applies a corresponding gate voltage, the mobility of the type A carriers between the first transmission layer and the second transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when the second gate control electrode applies a corresponding gate voltage, the mobility of the type B carriers between the third transmission layer and the fourth transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0015] Optionally, the thickness of the first regulating layer is smaller than that of the first transmission layer and the second transmission layer, and the thickness of the second regulating layer is smaller than that of the third transmission layer and the fourth transmission layer.

[0016] Optionally, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0017] Optionally, when the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is a cathode, the type A carrier is an electron, the second electrode is an anode, and the type B carrier is a hole, the first gate control electrode applies a positive voltage to improve the luminous efficiency of the light-emitting device; the second gate control electrode applies a negative voltage to improve the luminous efficiency and luminous brightness of the light-emitting device.

[0018] Optionally, step S5 includes:

[0019] According to the type of the light-emitting device, the film preparation is divided into one or more times, and the light-emitting functional layer is formed on the second transmission layer.

[0020] Optionally, the thin film deposition includes: one of spin coating, spray coating and evaporation.

[0021] Optionally, the photolithography process includes: coating photoresist, exposing, developing and etching.

[0022] Beneficial effects of the present invention: 1. The current-type dual-gate regulated light-emitting device prepared by the present invention can apply the corresponding gate voltage through the gate regulating electrode to increase the mobility of the corresponding form of carriers between the transmission layers on the same side, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device. The present invention realizes unidirectional transmission of carriers while increasing the mobility of the corresponding form of carriers through the setting of the regulating layer, avoiding carrier diversion or electric field shielding caused by carrier backflow, thereby achieving efficient regulation. 2. The current-type dual-gate regulated light-emitting device prepared by the present invention has two gate regulating electrodes located at both ends, one end can regulate the luminous efficiency, and the other end can simultaneously regulate the luminous efficiency and luminous brightness. The luminous efficiency and luminous brightness can be precisely regulated at the same time by matching the size of the gate voltage of the two, making the gate regulation more flexible. 3. The first electrode, the first gate regulating electrode and the second gate regulating electrode of the present invention are jointly manufactured, which can reduce the preparation steps. And the first regulating layer covers the first transmission layer and the first gate regulating electrode, and the second regulating layer covers the second transmission layer and the first gate regulating electrode, reducing the setting of the insulating layer, making the structure simpler. The preparation process of the present invention can effectively reduce the preparation steps, simplify the preparation process and improve the preparation efficiency.

[0023] In summary, the present invention provides a light-emitting device that can be efficiently and flexibly gate-controlled and an efficient preparation process thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1It is a schematic diagram of a process for preparing a current-type dual-gate regulated unidirectional junction-cutoff composite light-emitting device provided by a specific embodiment of the present invention;

[0025] Figure 2 It is a structural schematic diagram of a current-type dual-gate controlled light-emitting device provided by a specific embodiment of the present invention;

[0026] Figure 3 This is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S1 provided in a specific embodiment of the present invention;

[0027] Figure 4 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S2 provided in a specific embodiment of the present invention;

[0028] Figure 5 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S3 provided in a specific embodiment of the present invention;

[0029] Figure 6 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S4 provided in a specific embodiment of the present invention;

[0030] Figure 7 It is a schematic diagram of changes in a current-type dual-gate controlled light-emitting device in step S5 provided in a specific embodiment of the present invention;

[0031] Figure 8 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S6 provided in a specific embodiment of the present invention;

[0032] Fig. 9 It is a schematic diagram of changes in a current-type dual-gate controlled light-emitting device in step S7 provided in a specific embodiment of the present invention;

[0033] Fig.10 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S8 provided in a specific embodiment of the present invention;

[0034] Fig.11 It is a schematic diagram of the changes of the current-type dual-gate controlled light-emitting device in step S9 provided in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0035] The present invention discloses a preparation process for a current-type dual-gate regulated unidirectional junction-cutoff composite light-emitting device. Those skilled in the art can refer to the content of this article and appropriately improve the technical details for implementation. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art, and they are all deemed to be included in the present invention. The methods and applications of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0036] The applicant has found through research that in the prior art, the gate control will cause carrier conduction or electric field shielding during current injection or built-in electric field construction, which affects the effective injection of control carriers and causes failure of efficient control. At the same time, the gate control of the prior art is generally single-ended, but single-ended control is difficult to balance the adjustment of luminous efficiency and luminous brightness, so it is not flexible enough. Therefore, there is a lack of a gate light-emitting device and a corresponding preparation process that can be efficiently and flexibly controlled.

[0037] Therefore, the embodiment of the present invention provides a current-type dual-gate regulated unidirectional junction cutoff composite light-emitting device preparation process, such as Figure 1 As shown, the process includes:

[0038] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode.

[0039] It should be noted that the first electrode, the first gate control electrode and the second gate control electrode can be made of the same conductive material and can therefore be made at the same level. This can reduce the number of layers of the final light-emitting device, simplify the structure, reduce the preparation steps, and improve the preparation efficiency.

[0040] In this specific embodiment, the structure of the current-type dual-gate light-emitting device can be as follows: Figure 2 As shown, it includes: a first electrode 201, a first gate control electrode 202, a second gate control electrode 203, a first transmission layer 204, a first control layer 205, a second transmission layer 206, a light-emitting functional layer 207, a third transmission layer 208, a second control layer 209, a fourth transmission layer 210, a second electrode 211 and a substrate 212. Figure 2 As shown, the first regulating layer 205 covers the first transmission layer 204 and the first gate regulating electrode 202 at the same time, and the second regulating layer 209 covers the third transmission layer 208 and the second gate regulating electrode 203 at the same time. Figure 2 The layer-by-layer covering structure can prevent the spaced layers from contacting each other, thus preventing the light-emitting device from being damaged or its function from being degraded.

[0041] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S1 is as follows: Figure 3 shown.

[0042] Step S2: Cover the first type A carrier material layer on the first electrode by thin film deposition, and perform photolithography on the first type A carrier material layer to form a first transmission layer to cover the first electrode.

[0043] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S2 is as follows: Figure 4 shown.

[0044] Step S3, covering the first type B carrier material layer on the first transmission layer and the first gate control electrode by thin film deposition, performing photolithography on the first type B carrier material layer, and forming a first control layer on the first transmission layer and the first gate control electrode.

[0045] Among them, type A carriers and type B carriers carry opposite charges.

[0046] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S3 is as follows: Figure 5 shown.

[0047] Step S4: Covering the second type A carrier material layer on the first regulating layer by thin film deposition, and performing photolithography on the second type A carrier material layer to form a second transport layer.

[0048] It should be noted that type A carriers and type B carriers are holes or electrons, which are opposite to each other. The present invention uses a sandwich structure of type A carrier layer-type B carrier layer-type A carrier layer, so that when a corresponding voltage is applied to the type B carrier layer, the type A carrier passes through the type B carrier layer and increases its mobility. At the same time, the type B carrier layer plays a unidirectional transmission role, preventing the type A carrier from flowing back, and achieving efficient regulation.

[0049] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S4 is as follows: Figure 6 shown.

[0050] Step S5: preparing a light-emitting functional layer on the second transmission layer according to the type of the light-emitting device.

[0051] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S5 is as follows: Figure 7 shown.

[0052] In this specific embodiment, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0053] In this specific embodiment, step S5 includes:

[0054] According to the type of the light-emitting device, the film preparation is divided into one or more times to form a light-emitting functional layer on the second transmission layer.

[0055] It should be noted that different light-emitting devices have different numbers and types of layers in the light-emitting functional layer. For example, OLED includes an organic light-emitting layer, and QLED includes a quantum dot light-emitting layer. Therefore, preparation should be carried out according to demand.

[0056] Step S6: Cover the light-emitting functional layer with a second type B carrier material layer by thin film deposition, and perform photolithography on the second type B carrier material layer to form a third transport layer.

[0057] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S6 is as follows: Figure 8 shown.

[0058] Step S7, covering the third type A carrier material layer on the third transmission layer and the second gate control electrode by thin film deposition, performing photolithography on the third type A carrier material layer, and forming a second control layer on the third transmission layer and the second gate control electrode.

[0059] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S7 is as follows: Fig. 9 shown.

[0060] Step S8, covering the third type B carrier material layer on the second regulating layer by thin film deposition, and performing photolithography on the third type B carrier material layer to form a fourth transport layer.

[0061] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S8 is as follows: Fig.10 shown.

[0062] It should be noted that, similar to the sandwich structure of type A carrier layer-type B carrier layer-type A carrier layer, type B carrier layer-type A carrier layer-type B carrier layer can make type B carriers pass through type A carrier layer and increase their mobility when a corresponding voltage is applied to type A carrier layer. At the same time, type A carrier layer plays a unidirectional transmission role, preventing type B carriers from flowing back, and achieving efficient regulation. At the same time, the embodiment of the present invention has two gate regulation electrodes, which can accurately regulate the luminous efficiency and brightness at the same time, and achieve flexible regulation.

[0063] Step S9: depositing a second conductive layer on the fourth transmission layer, and performing photolithography on the second conductive layer to form a second electrode.

[0064] In this specific embodiment, the change of the current-type dual-gate controlled light-emitting device in step S9 is as follows: Fig.11 shown.

[0065] Among them, when the first gate control electrode applies a corresponding gate voltage, the mobility of type A carriers between the first transmission layer and the second transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when the second gate control electrode applies a corresponding gate voltage, the mobility of type B carriers between the third transmission layer and the fourth transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0066] In this specific embodiment, the thickness of the first regulating layer is smaller than that of the first transmission layer and the second transmission layer, and the thickness of the second regulating layer is smaller than that of the third transmission layer and the fourth transmission layer.

[0067] In this specific embodiment, when the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is a cathode, the type A carrier is an electron, the second electrode is an anode, and the type B carrier is a hole, the first gate control electrode applies a positive voltage to improve the luminous efficiency of the light-emitting device; the second gate control electrode applies a negative voltage to improve the luminous efficiency and luminous brightness of the light-emitting device.

[0068] In this specific embodiment, the thin film deposition includes: one of spin coating, spray coating and evaporation.

[0069] In this specific embodiment, the photolithography process includes: coating photoresist, exposure, development and etching.

[0070] The current-type dual-gate regulated light-emitting device prepared by the embodiment of the present invention can increase the mobility of corresponding forms of carriers between the transmission layers on the same side by applying the corresponding gate voltage through the gate regulation electrode, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device. The embodiment of the present invention realizes unidirectional transmission of carriers while increasing the mobility of corresponding forms of carriers through the setting of the regulation layer, avoiding carrier diversion or electric field shielding caused by carrier backflow, thereby realizing efficient regulation.

[0071] The current-type dual-gate regulated light-emitting device prepared in the embodiment of the present invention has two gate regulation electrodes located at two ends respectively, one end can regulate the luminous efficiency, and the other end can simultaneously regulate the luminous efficiency and the luminous brightness. By coordinating the size of the gate voltages of the two, the luminous efficiency and the luminous brightness can be precisely regulated simultaneously, making the gate regulation more flexible.

[0072] The first electrode, the first gate control electrode and the second gate control electrode of the embodiment of the present invention are manufactured together, which can reduce the preparation steps. The first control layer covers the first transmission layer and the first gate control electrode, and the second control layer covers the second transmission layer and the first gate control electrode, which reduces the setting of the insulating layer and makes the structure simpler. The preparation process of the embodiment of the present invention can effectively reduce the preparation steps, simplify the preparation process, and improve the preparation efficiency.

[0073] In summary, the embodiments of the present invention provide a light-emitting device that can be efficiently and flexibly gate-controlled and an efficient preparation process thereof.

[0074] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0075] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0076] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A preparation process for a current-type dual-gate regulated unidirectional junction-cutoff composite light-emitting device, characterized in that: The process comprises: Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode; Step S2, covering the first electrode with a first type A carrier material layer by thin film deposition, and performing photolithography on the first type A carrier material layer to form a first transmission layer to cover the first electrode; Step S3, covering the first type B carrier material layer on the first transmission layer and the first gate control electrode by thin film deposition, performing photolithography on the first type B carrier material layer, and forming a first control layer on the first transmission layer and the first gate control electrode; wherein the type A carrier and the type B carrier carry opposite charges; Step S4, covering the first regulating layer with a second type A carrier material layer by thin film deposition, and performing photolithography on the second type A carrier material layer to form a second transport layer; Step S5: preparing a light-emitting functional layer on the second transmission layer according to the type of the light-emitting device; Step S6, covering the light-emitting functional layer with a second type B carrier material layer by thin film deposition, and performing photolithography on the second type B carrier material layer to form a third transport layer; Step S7, covering the third type A carrier material layer on the third transmission layer and the second gate control electrode by thin film deposition, performing photolithography on the third type A carrier material layer, and forming a second control layer on the third transmission layer and the second gate control electrode; Step S8, covering the second regulating layer with a third type B carrier material layer by thin film deposition, and performing photolithography on the third type B carrier material layer to form a fourth transport layer; Step S9, coating a second conductive layer on the fourth transmission layer, and photolithography the second conductive layer to form a second electrode; wherein, when the first gate control electrode applies a corresponding gate voltage, the mobility of the type A carriers between the first transmission layer and the second transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when the second gate control electrode applies a corresponding gate voltage, the mobility of the type B carriers between the third transmission layer and the fourth transmission layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

2. The process for preparing a current-mode dual-gate controlled light-emitting device according to claim 1, characterized in that: The first regulating layer has a thickness smaller than that of the first transmission layer and the second transmission layer, and the second regulating layer has a thickness smaller than that of the third transmission layer and the fourth transmission layer.

3. The process for preparing a current-mode dual-gate controlled light-emitting device according to claim 1, characterized in that: The light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

4. The process for preparing a current-mode dual-gate controlled light-emitting device according to claim 1, characterized in that: When the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is a cathode, the type A carrier is an electron, the second electrode is an anode, and the type B carrier is a hole, the first gate control electrode applies a positive voltage to improve the luminous efficiency of the light-emitting device; the second gate control electrode applies a negative voltage to improve the luminous efficiency and luminous brightness of the light-emitting device.

5. The process for preparing a current-type dual-gate controlled light-emitting device according to claim 1, characterized in that: Described step S5 comprises: According to the type of the light-emitting device, the film preparation is divided into one or more times, and the light-emitting functional layer is formed on the second transmission layer.

6. The process for preparing a current-mode dual-gate controlled light-emitting device according to claim 1, characterized in that: The thin film deposition includes: one of spin coating, spray coating and evaporation.

7. The process for preparing a current-mode dual-gate controlled light-emitting device according to claim 1, characterized in that: The photolithography process includes: coating photoresist, exposure, development and etching.

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