Method for testing alkali purity, alkali strength and alkali residual quantity by using photoetching machine

Abstract

The invention relates to the field of analysis and detection, in particular to a method for testing alkali purity, alkali strength and alkali residual quantity by using a photoetching machine, which comprises the following steps: step 1, preparing a photoresist sample according to a photoresist formula; the photoresist formula comprises organic alkali, a photoacid generator, resin, a flatting agent and a solvent, step 2, performing a photoetching test on the photoresist sample by using a photoetching machine according to a photoetching process to obtain exposure energy data of the photoresist sample; 3, according to the exposure energy data, obtaining the relative size of the alkali purity of the selected organic alkali, the relative size of the alkaline strength of the selected organic alkali, or the relative size of the alkali residual quantity of alkaline substances contained in other components in the photoresist formula except the organic alkali; meanwhile, the data obtained through testing is used for forming a database, theoretical research of organic chemistry, analytical chemistry, photochemistry and other subjects is assisted in a targeted mode, scientific research expenditure is saved, scientific research time is saved, and scientific research efficiency is improved.

Description

Technical Field

[0001] The invention relates to the field of analysis and detection, and in particular to a method for testing alkali purity, alkali strength and alkali residue by using a photolithography machine. Background Art

[0002] Photoresist is a material that plays a key role in micro-nano processing such as semiconductor manufacturing. The organic base in photoresist has the following main functions: 1) Regulate the diffusion of acid In a chemically amplified photoresist system, acid is generated after the photoresist is exposed. The degree of acid diffusion has a great influence on the resolution of the photoresist. Organic bases can control the diffusion length of the acid. For example, in deep ultraviolet photoresist, the acid generated by exposure will catalyze the deprotection reaction of the resin in the photoresist, causing the solubility of the photoresist in the developer to change. If the acid diffuses excessively, the resolution of the pattern will decrease and the feature size will be difficult to control. Organic bases can react with acids to neutralize or form acid-base complexes, limiting the diffusion range of the acid, allowing the photoresist to form finer patterns, which helps to improve the resolution of lithography.

[0003] 2) Improve the stability of photoresist Photoresists may be affected by environmental factors during storage and use. Organic bases can prevent unnecessary chemical reactions in unexposed areas of photoresists. For example, during the exposure process, some photoresists may be affected by trace impurities in the air or active groups on the substrate surface, resulting in dark reactions (reactions that occur in unexposed areas). Organic bases can capture active substances that may trigger dark reactions, such as some acidic impurities, thereby improving the stability of photoresists, extending their shelf life, and ensuring that the photoresists can maintain good performance before exposure.

[0004] 3) Improve the development performance of photoresist The development process of photoresist is the process of distinguishing the areas with different solubility after exposure. Organic bases or quenchers can adjust the dissolution rate of photoresist in the developer. Without a suitable organic base or quencher, the photoresist may be over-dissolved or under-dissolved. For example, in alkaline-developed photoresist, organic bases can interact with the alkali in the developer to optimize the dissolution behavior of the photoresist, so that the exposed areas can be accurately removed and the unexposed areas remain intact, thereby obtaining high-quality lithography patterns.

[0005] The above effects of organic bases are all related to the purity of the organic base and its alkalinity. Taking the photosensitivity as an example, the higher the purity of the organic base and the stronger the alkalinity, the slower the photosensitivity (sensitivity) of the formula sample with the same addition amount; In reality, the higher the purity, the more difficult the chromatographic detection is. Especially when the purity of organic bases is greater than 99%, it is difficult to accurately test the purity of organic bases more accurately, and it is impossible to select the best organic base in an efficient time; at the same time, it is difficult to accurately compare the alkalinity of organic bases with similar structures or small differences in alkalinity. In the prior art, the acid-base titration method is commonly used, but this technology has problems such as difficulty in solvent selection due to solubility problems, difficulty in distinguishing two bases of similar strength, and problem in selecting the type of acid used for titration.

[0006] In addition, the resin used in the photoresist formula is a homopolymer or a copolymer. In the process of preparing the resin, an acidic catalyst is used. In order to obtain a resin with a certain molecular weight or a repeating unit ratio, an organic base is promptly introduced into the system after the target resin is obtained to neutralize the activity of the acidic catalyst and terminate the reaction. Therefore, the prepared resin product will contain a trace amount of organic base; at the same time, the groups in the resin will also undergo deprotection reactions in the presence of acidic substances, reducing the stability of the photoresist. In order to maintain the stability of the photoresist, an organic base is also introduced into the resin; then the resin containing the organic base is washed multiple times with pure water.

[0007] Similarly, in the photoacid generator of the photoresist formula, it is necessary to control the photoacid generator to produce photoacid in an appropriate time period and lighting conditions. If the photoacid is produced in advance or it contains acidic substances, it will also have a greater impact on the stability of the photoresist product. Therefore, in the actual experiment, alkaline substances will be introduced during the post-treatment of the photoacid generator to neutralize the acidic substances therein. Finally, it is washed with pure water multiple times to remove the trace alkaline substances therein to maintain the stability of the photoresist sample.

[0008] However, the resin or photoacid generator still contains extremely small amounts of alkaline substances that cannot be detected by existing instruments. These small amounts of alkaline substances will also affect the specific mass content of the organic base used as a quencher in the photoresist formula. Only after the photoresist product is prepared can we know whether the resin or photoacid generator is qualified based on the stability and quality of the photoresist product, which will lead to a large number of failed experimental products.

[0009] Based on the above situation, the existing technology can only tentatively select a suitable organic base as a quencher through a large number of repeated experiments, consuming a lot of financial resources and energy in testing the purity and alkalinity of the organic base, and can only form personal experience that cannot be described or quantified, which is not conducive to the development of scientific theories in related fields, or the residual amount of alkaline substances in the resin or photoacid generator used in the photoresist formula has a great influence on the stability of the photoresist product, resulting in a large number of failed experimental products, reducing efficiency, and increasing costs. Technical problems that need to be solved urgently. Summary of the invention

[0010] In order to solve the above technical problems, the present invention provides a method for testing alkali purity, alkali strength and alkali residue using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; Step 2: Performing a photolithography test on the photoresist sample using a photolithography machine according to a photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; Step 3, obtaining the relative size of the base purity of the selected organic base, the relative size of the basic strength of the organic base, or the relative size of the base residue of the alkaline substances contained in the remaining components of the photoresist formula except the organic base according to the exposure energy data; Wherein, when the structures of the organic bases are consistent, the base purity of the organic bases increases with the increase of the exposure energy data; When the structures of the organic bases are inconsistent, the basicity strength of the organic bases decreases as the exposure energy data increases; When the base purity of the organic base of the same structure is the same, the base residue of the alkaline substances contained in the other components of the photoresist formula except the organic base increases with the increase of the exposure energy data.

[0011] Furthermore, the organic base in step 1 includes one or more of pyridine compounds, tertiary amines, alicyclic amines, tetraalkylammonium hydroxides, and vinylpyridine polymers.

[0012] Furthermore, the pyridine compound includes but is not limited to one or more of pyridine, picoline, N,N-dimethylpyridine, α,α,α-terpyridine, 4-phenyl-pyridine, and (2-(2-pyridyl)benzimidazole).

[0013] Furthermore, the tertiary amine includes, but is not limited to, one or more of triethylamine, tributylamine, tripentylamine, triheptylamine, trioctylamine, trinonylamine, dodecylamine, didodecylamine, tri-n-dodecylamine, dioctylmethylamine, dicyclohexylmethylamine, dimethyldodecylamine, dimethylhexadecylamine, tribenzylamine, tri[2-(2-methoxyethoxy)ethyl]amine, tri(3,6-dioxaheptyl)amine, tri(3,6-dioxahexyl)amine, triethanolamine, and triisopropanolamine.

[0014] Furthermore, the alicyclic amine includes but is not limited to one or more of N-methylpyrrolidine, N-methylpiperidine, and 1,4-diaminobicyclo[2,2,2]octane.

[0015] Furthermore, the tetraalkylammonium hydroxide includes, but is not limited to, one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide (TPAH), and tetra-n-butylammonium hydroxide.

[0016] Furthermore, the vinylpyridine polymer includes but is not limited to one or more of polyvinylpyridine, poly(vinylpyridine / methyl methacrylate), and the like.

[0017] Furthermore, the alkaline substance in step 1 includes one or more of pyridine compounds, tertiary amines, alicyclic amines, tetraalkylammonium hydroxides, and vinylpyridine polymers.

[0018] Furthermore, the pyridine compound includes but is not limited to one or more of pyridine, picoline, N,N-dimethylpyridine, α,α,α-terpyridine, 4-phenyl-pyridine, and (2-(2-pyridyl)benzimidazole).

[0019] Furthermore, the tertiary amine includes, but is not limited to, one or more of triethylamine, tributylamine, tripentylamine, triheptylamine, trioctylamine, trinonylamine, dodecylamine, didodecylamine, tri-n-dodecylamine, dioctylmethylamine, dicyclohexylmethylamine, dimethyldodecylamine, dimethylhexadecylamine, tribenzylamine, tri[2-(2-methoxyethoxy)ethyl]amine, tri(3,6-dioxaheptyl)amine, tri(3,6-dioxahexyl)amine, triethanolamine, and triisopropanolamine.

[0020] Furthermore, the alicyclic amine includes but is not limited to one or more of N-methylpyrrolidine, N-methylpiperidine, and 1,4-diaminobicyclo[2,2,2]octane.

[0021] Furthermore, the tetraalkylammonium hydroxide includes, but is not limited to, one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide (TPAH), and tetra-n-butylammonium hydroxide.

[0022] Furthermore, the vinylpyridine polymer includes but is not limited to one or more of polyvinylpyridine, poly(vinylpyridine / methyl methacrylate), and the like.

[0023] Furthermore, the alkaline substance in step 1 is the same as or different from the organic base.

[0024] Furthermore, the photoacid generator in step 1 includes one or more of a sulfonium salt ionic photoacid generator, an iodonium salt ionic photoacid generator, a sulfonyldiazomethane molecular photoacid generator, a sulfonyloxyimide molecular photoacid generator, a polyphenol sulfonate molecular photoacid generator, a nitrobenzyl sulfonate molecular photoacid generator, a glyoxime molecular photoacid generator, and a di-(trichloromethane)-triazine molecular photoacid generator.

[0025] Furthermore, the structural formula of the sulfonium salt ionic photoacid generator is: , Among them, sulfonium salts are salts of sulfur cations; R 11 , R 12 , R 13 Each of the following is independently selected from H, halogen, cyano, hydroxy, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro, substituted bridged ring, substituted condensed ring, 1-20 atoms of heterocyclic ring containing oxygen, nitrogen, sulfur, substituted 1-20 atoms of heterocyclic ring containing oxygen, nitrogen, sulfur, aryl, condensed ring aryl, heteroaryl, substituted aryl, substituted condensed ring aryl, substituted heteroaryl, and alkoxy; Z - is an anion including but not limited to sulfonate, benzenesulfonate, hexafluoroantimonate, pentafluorophosphate, sulfonimide, imide, or Z - It is an anion which is fully or partially fluorinated.

[0026] Furthermore, R 11 , R 12 , R 13 It can also be a group that forms a ring with each other or is connected to any polymer or is connected to another sulfonium salt type ionic photoacid generator.

[0027] Furthermore, the sulfur cations in the sulfonium salt ionic photoacid generator include but are not limited to: (4-methylphenyl)diphenylsulfonium, (4-methoxyphenyl)diphenylsulfonium, tris(4-methoxyphenyl)sulfonium, (4-tert-butylphenyl)diphenylsulfonium, (4-tert-butoxyphenyl)diphenylsulfonium, bis(4-tert-butoxyphenyl)phenylsulfonium, tris(4-tert-butylphenyl)sulfonium, tris(4-tert-butoxyphenyl)sulfonium, tris(4-methylphenyl)sulfonium, (4-methoxy-3,5-dimethylphenyl)dimethylsulfonium, (3-tert-butoxyphenyl)diphenylsulfonium, bis(3-tert-butoxyphenyl)phenylsulfonium, tris(3-tert-butoxyphenyl)sulfonium, (3,4-di-tert-butoxyphenyl)diphenylsulfonium, bis(3,4-di-tert-butoxyphenyl)phenylsulfonium, tris(3,4-di-tert-butoxyphenyl)sulfonium, (4 The present invention is one of (4-tert-butoxyphenyl)diphenylsulfonium, (4-cyclohexylphenyl)diphenylsulfonium, bis(p-phenylene)bis(diphenylsulfonium), diphenyl(4-thiophenoxyphenyl)sulfonium, diphenyl(4-thiophenylphenyl)sulfonium, diphenyl(8-thiophenylbiphenyl)sulfonium, (4-tert-butoxycarbonylmethoxyphenyl)diphenylsulfonium, tris(4-tert-butoxycarbonylmethoxyphenyl)sulfonium, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium, tris(4-dimethylaminophenyl)sulfonium, 2-naphthyldiphenylsulfonium, dimethyl(2-naphthyl)sulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium and tribenzylsulfonium.

[0028] Furthermore, Z in the sulfonium salt ionic photoacid generator is - Anions include, but are not limited to, one of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate and methanesulfonate; or one of bis(perfluoromethanesulfonyl)imide, bis(perfluoroethanesulfonyl)imide, bis(perfluorobutanesulfonyl)imide, bis(perfluorobutanesulfonyloxy)imide, bis[perfluoro(2-ethoxyethane)sulfonyl]imide, and N,N-hexafluoropropane-1,3-disulfonimide; or tris[(trifluoromethyl)sulfonyl]methane, tris[(perfluorobutyl)sulfonyl]methane anion.

[0029] Furthermore, the structural formula of the iodonium salt-based ionic photoacid generator is: , Wherein, iodonium salt is a salt of iodine cation; R 21 , R22 Each of them is independently H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro ring, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro ring, substituted bridged ring, substituted condensed ring, heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, substituted heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, aryl, condensed ring aryl, heteroaryl, substituted aryl, substituted condensed ring aryl, substituted heteroaryl, and alkoxy.

[0030] Furthermore, the iodine cations in the iodonium salt-based ionic photoacid generator include but are not limited to: Diphenyliodonium, (4-methoxyphenyl)-phenyliodonium, bis(4-methoxyphenyl)iodonium, (4-tert-butylphenyl)-phenyliodonium, (4-tert-butoxyphenyl)phenyliodonium, bis(4-tert-butoxyphenyl)iodonium, bis(4-tert-butylphenyl)iodonium, bis(4-tert-butoxyphenyl)iodonium, bis(4-methylphenyl)iodonium, bis(4-methoxy-3,5 1-dimethylphenyl)dimethyl iodide, (4-methoxy-3,5-dimethylphenyl)methyl iodide, dimethyl iodide, (3-tert-butoxyphenyl)phenyl iodide, bis(3-tert-butoxyphenyl)iodide, bis(3-tert-butoxyphenyl)iodide, (3,4-di-tert-butoxyphenyl)phenyl iodide, bis(3,4-di-tert-butoxyphenyl)iodide, bis(3,4-di-tert-butoxyphenyl)iodide iodonium, (4-phenoxyphenyl)phenyl iodonium, (4-cyclohexylphenyl)phenyl iodonium, bis(p-phenylene)bis(diphenyl iodonium), diphenyl(4-thiophenoxyphenyl)iodonium, diphenyl(4-thiophenylphenyl)iodonium, diphenyl(8-thiophenylbiphenyl)iodonium, (4-tert-butoxycarbonyl)-methoxyphenyl-iodonium, bis(4-tert-butoxycarbonyl)-methoxyphenyl-iodonium, one of (4-tert-butoxyphenyl)-(4-dimethylaminophenyl) iodonium, (4-tert-butoxyphenyl)-(4-dimethylaminophenyl) iodonium, bis(4-dimethylaminophenyl) iodonium, 2-naphthylphenyl iodonium, methyl(2-naphthyl) iodonium, 4-hydroxyphenylmethyl iodonium, 4-methoxyphenylmethyl iodonium, bismethyl iodonium, 2-oxocyclohexylcyclohexylmethyl iodonium, dinaphthyl iodonium and bisbenzyl iodonium; X - is an anion including but not limited to sulfonate, benzenesulfonate, hexafluoroantimonate, pentafluorophosphate, sulfonimide, imide, amide, or X - It is an organic anion which is fully or partially fluorinated.

[0031] Furthermore, the X in the iodonium salt ionic photoacid generator is - Anions include, but are not limited to: One of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate; or one of bis(perfluoromethanesulfonyl)imide, bis(perfluoroethanesulfonyl)imide, bis(perfluorobutanesulfonyl)imide, bis(perfluorobutanesulfonyloxy)imide, bis[perfluoro(2-ethoxyethane)sulfonyl]imide, and N,N-hexafluoropropane-1,3-disulfonimide; or one of tris[(trifluoromethyl)sulfonyl]methane anion and tris[(perfluorobutyl)sulfonyl]methane anion.

[0032] Furthermore, R 21 , R 22 It can also be a group that forms a ring with each other or is connected to any polymer or is connected to another iodonium salt type ionic photoacid generator.

[0033] Furthermore, the structural formula of the sulfonyldiazomethane molecular photoacid generator is: , where R 31 , R 32 Each of them is independently H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro, substituted bridged ring, substituted condensed ring, a heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, a substituted heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, an aryl, a condensed ring aryl, a heteroaryl, a substituted aryl, a substituted condensed ring aryl, a substituted heteroaryl, and an alkoxy group.

[0034] Furthermore, R 31 , R 32 It can also be a group that forms a ring with each other or is connected to any polymer or is connected to another sulfonyldiazomethane type molecular type photoacid generator.

[0035] Furthermore, the sulfonyldiazomethane molecular photoacid generator includes but is not limited to: Bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylbenzenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane diazomethane, bis(2-naphthylsulfonyl)diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-butyloxycarbonyl-4-methylphenylsulfonyldiazomethane.

[0036] Furthermore, the structural formula of the sulfonyloxyimide molecular photoacid generator is: , wherein the sulfonyloxyimide molecular photoacid generator is composed of a sulfonate group and an imide; R 41 , R 42 , R 43 Each of them is independently H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro, substituted bridged ring, substituted condensed ring, a heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, a substituted heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, an aryl, a condensed ring aryl, a heteroaryl, a substituted aryl, a substituted condensed ring aryl, a substituted heteroaryl, and an alkoxy group.

[0037] Furthermore, R 41 , R 42 , R 43 They can also be groups that are cyclic or connected to any polymer.

[0038] Further, the sulfonate group includes but is not limited to: one of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.

[0039] Further, the imide includes but is not limited to: succinimide, naphthalimide, phthalimide, cyclohexyldicarboximide, 5-norbornene 2,3-dicarboximide and 7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboximide, bis(perfluoromethanesulfonyl)imide, bis(perfluoroethanesulfonyl)imide, bis(perfluorobutanesulfonyl)imide, bis(perfluorobutanesulfonyloxy)imide, bis[perfluoro(2-ethoxyethane)sulfonyl]imide, one of N,N-hexafluoropropane-1,3-disulfonyl imide.

[0040] Furthermore, the structural formula of the polyphenol sulfonate molecular photoacid generator is: The structure of the polyphenol sulfonate molecular photoacid generator includes a polyphenol structure and a sulfonate group, which together form a sulfonate group. The structure of the polyphenol sulfonate molecular photoacid generator contains more than one sulfonate group and more than one R 51 substituent, so each R 51 , R 52 Each of them is independently H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro ring, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro ring, substituted bridged ring, substituted condensed ring, heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, substituted heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, aryl, condensed ring aryl, heteroaryl, substituted aryl, substituted condensed ring aryl, substituted heteroaryl, and alkoxy.

[0041] Furthermore, R 51 , R 52 It can also be a group connected to any polymer or to another polyphenol sulfonate molecule-type photoacid generator.

[0042] Furthermore, the polyphenol structure includes but is not limited to: catechol, hydroquinone, resorcinol, trisphenol, 1,2,4-trisphenol, meta-trisphenol, biphenol, bisphenol A, trisphenol A, catechol, (2R,3S)-3,3',4',5,7-pentahydroxyflavan-3-ol, (2R,3S)-2-(3,4-dihydroxyphenyl)-3,4-dihydroxy-5-[(2S,3R)-2,3-dihydroxy-3-(4-hydroxyphenyl)propyl]benzoic acid, (2R,3R)-3,3',4',5,7-pentahydroxyflavan -3-ol, (2R,3S)-2-(3,4-dihydroxyphenyl)-3,4,5-trihydroxy-[(2S,3R)-2,3-dihydroxy-3-(4-hydroxyphenyl)propyl]benzoic acid, 2-(3,4-dihydroxyphenyl)-3,5,7-trihydroxy-2H-chromone, 3,5,4'-trihydroxy-trans-stilbene, 1,7-bis(4-hydroxy-3-methoxyphenyl)-1,6-heptadiene-3,5-dione, 4,4',5,7-tetrahydroxybisbenzo[b,d]pyran-6,6'-dicarboxylic acid.

[0043] Further, the sulfonate group includes but is not limited to: one of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate and methanesulfonate.

[0044] Furthermore, the structural formula of the nitrobenzyl sulfonate type molecular photoacid generator is: , where R 61 , R 62 , R 63 Each of the following is independently selected from H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro, substituted bridged ring, substituted condensed ring, a heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, a substituted heterocycle containing 1-20 atoms of oxygen, nitrogen and sulfur, an aryl, a condensed ring aryl, a heteroaryl, a substituted aryl, a substituted condensed ring aryl, a substituted heteroaryl, and an alkoxy group; and the benzene ring contains at least one nitro group.

[0045] Furthermore, R 61 , R 62 , R 63 It can also be a group that forms a ring with each other or is connected to any polymer or is connected to another nitrobenzyl sulfonate type molecular type photoacid generator.

[0046] Further, the nitrobenzyl sulfonate molecular photoacid generator includes but is not limited to: one of 2,4-dinitrobenzyl sulfonate, 2-nitrobenzyl sulfonate, and 2, 6-dinitrobenzyl sulfonate; The sulfonate (salt) in the nitrobenzyl sulfonate molecular photoacid generator includes, but is not limited to, one of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.

[0047] Furthermore, the structural formula of the glyoxime-based molecular photoacid generator is: , where R 71 , R 72 , R 73 , R 74 Each of them is independently H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro ring, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro ring, substituted bridged ring, substituted condensed ring, heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, substituted heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, aryl, condensed ring aryl, heteroaryl, substituted aryl, substituted condensed ring aryl, substituted heteroaryl, and alkoxy.

[0048] Furthermore, R 71 , R 72 , R 73 , R 74 It can also be a group that forms a ring with each other or is connected to any polymer or is connected to another glyoxime type molecular type photoacid generator.

[0049] Further, the glyoxime-based molecular photoacid generator includes but is not limited to: bis-O-(p-toluenesulfonyl)-α-dimethylglyoxime, bis-O-(p-toluenesulfonyl)-α-diphenylglyoxime, bis-O-(p-toluenesulfonyl)-α-dicyclohexylglyoxime, bis-O-(p-toluenesulfonyl)-2,3-pentanedioneglyoxime, bis-O-(p-toluenesulfonyl)-2-methyl-3,4-pentanedioneglyoxime, bis-O-(n-butylsulfonyl)-α-dimethylglyoxime, bis-O-(n-butylsulfonyl)-α-diphenylglyoxime, bis-O-(n-butylsulfonyl)-α-dicyclohexylglyoxime, bis-O-(n-butylsulfonyl)-2,3-pentanedioneglyoxime, bis-O-(n-butylsulfonyl)- )-2-methyl-3,4-pentanedione glyoxime, bis-O-(methylsulfonyl)-α-dimethylglyoxime, bis-O-(trifluoromethanesulfonyl)-α-dimethylglyoxime, bis-O-(1,1,1-(trifluoroethanesulfonyl)-α-dimethylglyoxime, bis-O-(tert-butanesulfonyl)-α-dimethylglyoxime, bis-O-(perfluorooctanesulfonyl)-α-dimethylglyoxime, bis-O-(cyclohexylsulfonyl) One of α-dimethylglyoxime, bis-O-(benzenesulfonyl)-α-dimethylglyoxime, bis-O-(p-fluorobenzenesulfonyl)-α-dimethylglyoxime, bis-O-(p-tert-butylbenzenesulfonyl)-α-dimethylglyoxime, bis-O-(xylenesulfonyl)-α-dimethylglyoxime and bis-O-(camphorsulfonyl)-α-dimethylglyoxime.

[0050] Furthermore, the structural formula of the di-(trichloromethane)-triazine molecular photoacid generator is: , where R 81 It is one of H, halogen, cyano, hydroxyl, amino, nitro, 1-20 C alkyl, cycloalkyl, spiro, bridged ring, condensed ring, substituted alkyl, substituted cycloalkyl, substituted spiro, substituted bridged ring, substituted condensed ring, heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, substituted heterocyclic ring containing 1-20 atoms of oxygen, nitrogen and sulfur, aryl, condensed ring aryl, heteroaryl, substituted aryl, substituted condensed ring aryl, substituted heteroaryl, and alkoxy.

[0051] Furthermore, R 81 It can also be a group attached to any polymer or to another di-(trichloromethane)-triazine type molecular type photoacid generator.

[0052] Furthermore, the resin in step 1 is a copolymer or a homopolymer, with a molecular weight Mw of 3000-100,000 and a molecular weight distribution index PDI value of 1.02-3.

[0053] Furthermore, the monomer of the homopolymer is one of a styrene monomer, an acrylate monomer, a vinyl ether monomer, and a vinyl alcohol ester monomer.

[0054] Furthermore, the molar ratio of each monomer in the copolymer to the total monomers is greater than 0% and less than or equal to 99%.

[0055] Furthermore, the preferred structural formula of the resin is: , , , , , , One or more of the following; Among them, m 11 、n 12 、r 13 The quantity ratio is 60 / 20 / 20, or 65 / 20 / 15; n 22 The quantity in the corresponding structure accounts for one of 15%, 20%, or 25%; n 32 The quantity in the corresponding structure accounts for one of 20%, 30%, or 35%; n 42 The quantity in the corresponding structure accounts for one of 20%, 30%, or 35%; n 52 The quantity in the corresponding structure accounts for one of 20%, 30%, or 35%; n 62 The quantity in the corresponding structure accounts for one of 20%, 30%, or 35%; m 71 、n 72 、r 73 The quantity ratio is 20 / 5 / 75, or 25 / 5 / 70, or 30 / 5 / 65, or 35 / 5 / 6.

[0056] Further, the copolymer includes but is not limited to poly(p-hydroxystyrene / styrene / tert-butyl acrylate), poly(p-hydroxystyrene / styrene / tert-amyl acrylate), poly(p-hydroxystyrene / styrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / styrene / tetrahydropyranyl acrylate), poly(p-hydroxystyrene / styrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / styrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / styrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / styrene / triphenylmethyl acrylate), poly(p-hydroxystyrene / styrene / 1,1-diphenylethyl acrylate), poly(p-hydroxystyrene / styrene / 1,1-diphenylethyl acrylate), poly(p-hydroxystyrene acrylate), poly(p-hydroxystyrene / styrene / 2-phenyl-2-propyl acrylate), poly(p-hydroxy-a-methylstyrene / styrene / tert-butyl acrylate), poly(p-hydroxy-a-methylstyrene / styrene / tert-amyl acrylate), poly(p-hydroxystyrene / styrene / tert-butyl methacrylate), poly(p-hydroxystyrene / styrene / tert-amyl methacrylate), poly(p-hydroxystyrene / styrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / styrene / tetrahydropyranyl methacrylate), poly(p-hydroxystyrene / styrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / styrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / styrene / methyl acrylate), poly(p-hydroxystyrene / styrene / triphenylmethyl methacrylate), poly(p-hydroxystyrene / styrene / 1,1-diphenylethyl methacrylate), poly(p-hydroxystyrene / ethylene / 2-phenyl-2-propyl methacrylate), poly(p-hydroxy-a-methylstyrene / styrene / tert-butyl methacrylate), poly(p-hydroxy-a-methylstyrene / styrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / m-methylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / tert-butyl methacrylate). acrylate), poly(p-hydroxystyrene / p-methylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / m-methylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / tetrahydropyranyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / m-methylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / m-methylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate),Poly(p-hydroxystyrene / m-methylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / triphenylmethyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / 1,1-diphenylethyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / 2-phenyl-2-propyl acrylate), poly(p-hydroxy-a-methylstyrene / p-methylstyrene / tert-butyl acrylate), poly(p-hydroxy-a-methylstyrene / p-methylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-methylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / tetrahydropyroxyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / 2-methyl-2-adamantyl methacrylate ester), poly(p-hydroxystyrene / p-methylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / m-methylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / triphenylmethyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / 1,1-diphenylethyl methacrylate), poly(p-hydroxystyrene / p-methylstyrene / 2-phenyl-2-propyl methacrylate), poly(p-hydroxy-a-methylstyrene / p-methylstyrene / tert-butyl methacrylate), poly(p-hydroxy-a-methylstyrene / p-methylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-ethylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxy-q-methylstyrene / p-ethylstyrene / tert-pentyl acrylate), poly(p-hydroxy-α-methylstyrene / p-ethylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-ethylstyrene / tert-butyl methacrylate),Poly(p-hydroxystyrene / p-ethylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-ethylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-ethylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-ethylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-ethylstyrene / 4-methyl-2-oxo-4-tetrapyrrolidone methacrylate), poly(p-hydroxy-α-methylstyrene / p-ethylstyrene / tert-butyl methacrylate), poly(p-hydroxy-α-methylstyrene / p-ethylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / tert-butyl acrylate) , poly(p-hydroxystyrene / p-n-propylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-n-propylstyrene 1-adamantyl acrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxy-α-methylstyrene / p-n-propylstyrene / tert-butyl acrylate), poly(p-hydroxy-α-methylstyrene / p-n-propylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-n-propylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-n-propylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxy-a-methylstyrene / p-n-propylstyrene / tert-butyl methacrylate), poly(p-hydroxy-q-methylstyrene / p-n-propylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-isopropylstyrene / acrylic acid tert-butyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxy-a-methylstyrene p-isopropylstyrene / tert-butyl acrylate), poly(p-hydroxy-a-methylstyrene / p-propylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-isopropylstyrene / tert-butyl methacrylate),Poly(p-hydroxystyrene / p-isopropylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-isopropylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxy-0-methylstyrene / p-isopropylstyrene / tert-butyl methacrylate), poly(p-hydroxy-a-methylstyrene / p-isopropylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-n-butylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / p-butylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / p-butylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-butylstyrene / tert-butyl methacrylate), poly (p-hydroxystyrene / p-n-butylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-n-butylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-n-butylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-n-butylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-n-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / p-isobutylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / p-isobutylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-isobutylstyrene / 1-methylcyclohexyl acrylate), poly( p-Hydroxystyrene / p-isobutylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-isobutylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-isobutylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / p-isobutylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / p-isobutylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-isobutylstyrene / methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-isobutylstyrene / adamantyl methacrylate), poly(p-hydroxystyrene / p-isobutylstyrene / 2-methyl-2-adamantyl methacrylate),Poly(p-hydroxystyrene / p-isobutylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / tert-butyl methacrylate), poly (p-hydroxystyrene / p-sec-butylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-sec-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / tert-butyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / tert-amyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 1-methylcyclohexyl acrylate), poly(p-hydroxystyrene ethylene / p-tert-butylstyrene / 1-adamantyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 2-methyl-2-adamantyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / triphenylmethyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 1,1-diphenylethyl acrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 2-phenyl-2-propyl acrylate), poly(p-hydroxy-q-methylstyrene / p-tert-butylstyrene / tert-butyl acrylate), poly(p-hydroxy-a-methylstyrene / p-tert-butylstyrene / tert-amyl acrylate), poly(p-hydroxy methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / tert-butyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / tert-amyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 1-methylcyclohexyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 1-adamantyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 2-methyl-2-adamantyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / 4-methyl-2-oxo-4-tetrapyranyl methacrylate), poly(p-hydroxystyrene / p-tert-butylstyrene / triphenylmethyl methacrylate, poly(p-hydroxystyrene / p-tert-butylstyrene / 1,1-diphenylethyl methacrylate),One or more of poly(p-hydroxystyrene-p-tert-butylstyrene / 2-phenyl-2-propyl methacrylate), poly(p-hydroxy-a-methylstyrene / p-tert-butylstyrene / tert-butyl methacrylate), and poly(p-hydroxy-a-methylstyrene / p-tert-butylstyrene / tert-amyl methacrylate).

[0057] Furthermore, the leveling agent is a surfactant.

[0058] Furthermore, the surfactant contains a silicon-containing surfactant or a fluorine-containing surfactant.

[0059] Furthermore, the mass content of silicon in the silicon-containing surfactant is 10-50%.

[0060] Furthermore, the mass content of fluorine element in the fluorine-containing surfactant is 20-80%.

[0061] Furthermore, the solvent in step 1 is one or more of a carboxylic acid ester solvent, a ketone solvent, an ether solvent, and a cyclic amide solvent.

[0062] Furthermore, the carboxylate solvent includes but is not limited to: one or more of cellulose acetate methyl, cellulose acetate ethyl, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, 2-ethoxyethyl acetate, methyl pyruvate, ethyl pyruvate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-ethoxypropionate.

[0063] Furthermore, the ketones include but are not limited to one or more of cyclohexanone, methyl ethyl ketone, and 2-heptanone.

[0064] Furthermore, the ether solvent includes, but is not limited to, one or more of propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, and ethylene glycol monoisopropyl ether.

[0065] Furthermore, the ether solvent also includes a cyclic ether solvent.

[0066] Furthermore, the cyclic ether solvent includes but is not limited to 1,4-dioxane.

[0067] Furthermore, the cyclic amide solvent includes but is not limited to N-methyl-2-pyrrolidone.

[0068] Furthermore, the solvent is preferably one or more of propylene glycol monomethyl ether, cyclohexanone, propylene glycol monomethyl ether acetate, ethyl lactate, ethyl 3-ethoxypropionate, and diethylene glycol monomethyl ether.

[0069] Furthermore, in terms of weight percentage, the proportion of each component in the photoresist formula is: photoacid generator: 0.001-0.3%; organic base: 0.01-0.5%; resin: 1-50%; leveling agent: 0.002%; solvent: 50-90%, the total being 100%.

[0070] Further, when the alkalinity strength of the organic base is tested, the purity of the organic base is greater than or equal to 99.5 wt %.

[0071] Furthermore, after the photoresist sample prepared in step 1 is fully dissolved, it is filtered twice using a 0.1 μm organic membrane to remove tiny particles and dust impurities in the photoresist sample to ensure the purity of the photoresist sample; to ensure accuracy, the filtered formula needs to be stored in a clean bottle for future use.

[0072] Furthermore, the equipment used in the photolithography process includes: a coating and developing machine, a photolithography machine, and a FEB length measuring instrument.

[0073] Furthermore, the model of the coating and developing machine includes but is not limited to one of CLEANTRACK ACT8, ACT12, LITHIUS, LITHIUS Pro, LITHIUS Pro V, LITHIUS Pro Z, and LITHIUS Proap. produced by Tokyo Electron (TEL) of Japan.

[0074] Furthermore, the lithography machine includes but is not limited to a KrF lithography machine, an ArF lithography machine, or an EUV lithography machine.

[0075] Furthermore, the lithography machine includes but is not limited to one of the lithography machines of model 860, model 870, and model 1060 in the TWINSCAN series of ASML; or models NSR-1755Ex8A, NSR-2005Ex10B, NSR-2005Ex8A, NSR-2205Ex12B, NSR-2205Ex14C, NSR-SF200, NSR-S201A, NSR-S202A, NSR-S203A, NSR-S203B, NSR-S204B, NSR-S205C, NSR-S206D, One of NSR-S207D, NSR-S208D, NSR-S210D, NSR-S220D; or one of Canon's models: 3000EX1, 3000EX3, 3000EX3L, 3000EX4, 3000EX5, 3000EX6, 3030EX6, 4000ES1, 5000ES2, 5000ES3, 5000ES4, 6300ES6a, 6300ESW.

[0076] Furthermore, the FEB length measuring instrument includes but is not limited to one of the models CD-SEMS9380, CD-SEM CG4000, CD-SEM CG5100, and CD-SEM CG6300 produced by Hitachi High-Tech Corporation.

[0077] An application of the above method for testing alkali purity, alkali strength and alkali residue using a photolithography machine, wherein the method is used to test the purity and alkalinity strength of an organic alkali.

[0078] A database includes test results after testing using the above method of testing alkali purity, alkali strength and alkali residue using a photolithography machine.

[0079] The beneficial effects of the present invention are: 1. The present invention is based on the fact that in the prior art, only a large number of repeated experiments can be used to tentatively select a suitable organic base as a quencher, and a large amount of financial resources and energy are consumed in testing the purity and alkalinity of the organic base; and only personal experience that cannot be described or quantified can be formed, which is not conducive to the development of scientific theories in related fields, and there are technical problems such as inaccurate determination when using traditional acid-base titration, and the residual amount of alkaline substances in the resin or photoacid generator used in the photoresist formula has a great influence on the stability of the photoresist product, resulting in a large number of failed experimental products, reduced efficiency, and increased costs. The present invention creatively proposes a method for testing the purity, strength and residual amount of alkali using a photolithography machine, and the method is assisted by the photolithography machine and its supporting precision equipment, and the known and mature photolithography process is used to test and compare the purity of organic bases of the same structure, the alkalinity strength of organic bases of different structures, or the relative size of the residual amount of alkaline substances contained in the remaining components of the photoresist formula except the organic base; 2. The data obtained by the test of the present invention is used to form a database to assist the theoretical research of organic chemistry, analytical chemistry, photochemistry and other disciplines in a targeted manner; at the same time, it can also provide accurate ideas for the development of photoresist formulas, save scientific research funds, save scientific research time, and improve scientific research efficiency. DETAILED DESCRIPTION

[0080] Embodiment 1-5 is a method for testing the relative purity of organic bases of the same structure using a photolithography machine; Embodiment 6-9 is a method for testing the relative strength of the alkalinity of organic bases with different structures using a photolithography machine; Examples 10-13 are methods for measuring the residual alkali amount of alkaline substances contained in the remaining components of the photoresist formula except the organic base using a photolithography machine, wherein Examples 10-12 are methods for testing the relative size of the residual alkali amount in the resin; and Example 13 is a method for testing the relative size of the residual alkali amount in the photoacid generator.

[0081] Example 1 This embodiment provides a method for testing the relative purity of organic bases with the same structure using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 1: Table 1 Photoresist formulas for testing the purity of organic bases of the same structure using a photolithography machine

[0082] Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the relative purity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases of the same structure but different purity in the 1-1# formulation, the 1-2# formulation, and the 1-3# formulation are 40mj, 45mj, and 52mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively, indicating that the alkalinity strength is: TOA1<TOA2<TOA3; because only the purity of the organic base in the formula is different, and the alkalinity strength is approximately positively correlated with the purity, it can be concluded that the purity difference is: TOA1<TOA2<TOA3.

[0083] Example 2 This embodiment provides a method for testing the relative purity of organic bases with the same structure using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formula in this embodiment is shown in Table 2: Table 2 Photoresist formulas for testing the purity of organic bases of the same structure using a photolithography machine

[0084] Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the relative size of the base purity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases of the same structure and different purity in the 2-1# formula, 2-2# formula, and 2-3# formula are 30mj, 33mj, and 39mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively, indicating that the alkalinity strength is: TOA1<TOA2<TOA3; since only the purity of the organic base in the formula is different, and the alkalinity strength is approximately positively correlated with the purity, it can be concluded that the purity difference is: TOA1<TOA2<TOA3. Compared with Example 1, the resin and leveling agent in the photoresist formula are replaced in this Example 2, and the organic base purity results obtained are completely consistent with those in Example 1, indicating that the method of testing the purity of the organic base of the same structure of the present invention is effective.

[0085] Example 3 This embodiment provides a method for testing the relative purity of organic bases with the same structure using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formula in this embodiment is shown in Table 3: Table 3 Photoresist formulas for testing the purity of organic bases of the same structure using a photolithography machine

[0086] Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the relative size of the base purity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases of the same structure but different purity in the 3-1# formulation, the 3-2# ​​formulation, and the 3-3# formulation are 42mj, 49mj, and 55mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively, indicating that the alkalinity strength is: TEA 1<TEA 2<TEA 3; since only the purity of the organic base in the formula is different, and the alkalinity strength is approximately positively correlated with the purity, it can be concluded that the purity difference is: TEA 1<TEA 2<TEA 3.

[0087] Example 4 This embodiment provides a method for testing the relative purity of organic bases with the same structure using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 4: Table 4 Photoresist formulas for testing the purity of organic bases of the same structure using a photolithography machine

[0088] Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3. Obtain the relative purity of the selected organic base according to the exposure energy data. In the present embodiment, the exposure energy data corresponding to the organic bases with the same structure but different purities in the 4-1# formulation, the 4-2# formulation, and the 4-3# formulation are 36 mj, 39 mj, and 44 mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively, indicating that the alkalinity strength is: 4-phenylpyridine 1<4-phenylpyridine 2<4-phenylpyridine 3. Since only the purity of the organic base is different in the formulation, and the alkalinity strength is approximately positively correlated with the purity, it can be concluded that the purity difference is: 4-phenylpyridine 1<4-phenylpyridine 2<4-phenylpyridine 3.

[0089] Example 5 This embodiment provides a method for testing the relative purity of organic bases with the same structure using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 5: Table 5 Photoresist formulas for testing the purity of organic bases of the same structure using a photolithography machine

[0090] Step 2, perform a photolithography test on the photoresist sample using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 90℃90s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 90℃60s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the relative size of the base purity of the selected organic base; in this embodiment, the exposure energy data corresponding to the organic base of the same structure but different purity in the 5-1# formula, the 5-2# formula, and the 5-3# formula are 35mj, 38mj, and 43mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively, indicating that the alkalinity strength is: 2-(2-pyridyl)benzene imidazole 1<2-(2-pyridyl)benzene imidazole 2<2-(2-pyridyl)benzene imidazole 3; since only the purity of the organic base in the formula is different, and the alkalinity strength is approximately positively correlated with the purity, it can be concluded that the purity difference is: 2-(2-pyridyl)benzene imidazole 1<2-(2-pyridyl)benzene imidazole 2<2-(2-pyridyl)benzene imidazole 3.

[0091] Example 6 This embodiment provides a method for testing the relative strength of the alkalinity of organic bases with different structures using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 6: Table 6 Photoresist formulations with different organic base alkalinity strengths tested using a photolithography machine

[0092] Among them, the structural formula of Q6-1 (triheptylamine) is: ; The structural formula of Q6-2 (trioctylamine) is: ; The structural formula of Q6-3 (trinonylamine) is: ; And in this embodiment, the purity of the organic base is greater than 99.5wt%; Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3. Obtain the purity and alkalinity of the selected organic base according to the exposure energy data. In this embodiment, the exposure energy data (Eop data) corresponding to the organic bases with different structures in the 6-1# formulation, the 6-2# formulation, and the 6-3# formulation are 36 mj, 40 mj, and 42 mj, respectively. The Eop data in the three photoresist samples increase successively, that is, the sensitivity decreases successively. Since only the organic base structure is different in the formulation, it means that the alkalinity strengths of the three organic bases are: Q6-1>Q6-2>Q6-3.

[0093] Example 7 This embodiment provides a method for testing the relative strength of the alkalinity of organic bases with different structures using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 7: Table 7 Photoresist formulations with different organic base alkalinity strengths tested using a photolithography machine

[0094] Among them, the structural formula of Q7-1 is: ; The structural formula of Q7-2 is: ; The structural formula of Q7-3 is: ; In this embodiment, the purity of the organic base is greater than 99.5wt%; Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the alkalinity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases with different structures in the 7-1# formulation, the 7-2# formulation, and the 7-3# formulation are 48mj, 52mj, and 42mj, respectively. The Eop of the three photoresist samples is the fastest in the triple-grafting sensitivity (Q7-3) and the slowest in the di-grafting sensitivity (Q7-2). Since only the organic base structure is different in the formulation, it means that the alkalinity of the three organic bases is: Q7-3>Q7-1>Q7-2.

[0095] Example 8 This embodiment provides a method for testing the relative strength of the alkalinity of organic bases with different structures using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formula in this embodiment is shown in Table 8: Table 8 Photoresist formulations with different organic base alkalinity strengths tested using a photolithography machine

[0096] Among them, the structural formula of Q8-1 (triethylamine) is: ; The structural formula of Q8-2 (tripentylamine) is: ; The structural formula of Q8-3 (trioctylamine) is: ; In this embodiment, the purity of the organic base is greater than 99.5wt%; Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the alkalinity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases with different structures in the 8-1# formula, the 8-2# formula, and the 8-3# formula are 48mj, 43mj, and 37mj, respectively. Since only the organic base structure is different in the formula, the alkalinity strengths of these three organic bases are: Q8-1>Q8-2>Q8-3.

[0097] Example 9 This embodiment provides a method for testing the relative strength of the alkalinity of organic bases with different structures using a photolithography machine, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 9: Table 9 Photoresist formulations with different organic base alkalinity strengths tested using a photolithography machine

[0098] Among them, the structural formula of Q9-1 (tetramethylammonium hydroxide / TMAH) is: ; The structural formula of Q9-2 (tetrabutylammonium hydroxide / TBAH) is: ; In this embodiment, the purity of the organic base is greater than 99.5wt%; Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the two groups of recipe samples in this embodiment are obtained; Step 3, according to the exposure energy data, obtain the alkalinity of the selected organic base; in this embodiment, the exposure energy data (Eop data) corresponding to the organic bases with different structures in the 9-1# formula and the 9-2# formula are 38mj and 32mj respectively. Since only the organic base structure is different in the formula, it means that the alkalinity of the two organic bases is: Q9-2>Q9-1.

[0099] Example 10 This embodiment provides a method for using a photolithography machine to test the relative amount of residual alkaline substances in resins that meet the same factory specifications and are produced in different batches by the same manufacturer, including the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 10: Table 10 Test of the relative amount of alkaline substances in the photoresist formula produced by the same manufacturer in different batches and meeting the same factory specifications

[0100] Step 2, perform a photolithography test on the photoresist sample using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 110℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3. Obtain the relative amount of the residual alkaline substance in the selected resin according to the exposure energy data. In this embodiment, the exposure energy data (Eop data) corresponding to the same structure and purity organic base in the 10-1# formula, 10-2# formula, and 10-3# formula of the resins meeting the same factory specifications produced by the same manufacturer and different batches are 47mj, 51mj, and 42mj respectively. Since the component contents in the formulas are the same, the relative amount of the residual alkaline substances in the resins produced in different batches is: Q10-2>Q10-1>Q10-3.

[0101] Embodiment 11 This embodiment provides a method for using a photolithography machine to test the relative amount of residual alkaline substances in resins that meet the same factory specifications and are produced in different batches by the same manufacturer, including the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 11: Table 11 Test of the relative amount of alkaline substances in the photoresist formula produced by different batches of the same manufacturer and meeting the same factory specifications

[0102] Step 2, perform a photolithography test on the photoresist sample using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 90℃90s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 90℃60s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3. Obtain the relative amount of the residual alkaline substance in the selected resin according to the exposure energy data. In this embodiment, the exposure energy data (Eop data) corresponding to the same structure and purity organic base in the 11-1# formula, 11-2# formula, and 11-3# formula of the resins meeting the same factory specifications produced by the same manufacturer and different batches are 42mj, 43mj, and 49mj respectively. Since the component contents in the formulas are the same, the relative amount of the residual alkaline substances in the resins produced in different batches is: Q11-3>Q11-2>Q11-1.

[0103] Example 12 This embodiment provides a method for using a photolithography machine to test the relative amount of residual alkaline substances in resins that meet the same factory specifications and are produced in different batches by the same manufacturer, including the following steps: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; The photoresist formulation in this embodiment is shown in Table 12: Table 12 Test of the relative amount of alkaline substances in the photoresist formula produced by different batches of the same manufacturer and meeting the same factory specifications

[0104] Step 2, perform a photolithography test on the photoresist sample using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 90℃90s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 110℃60s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) of the three groups of recipe samples in this embodiment are obtained; Step 3. Obtain the relative amount of the residual alkaline substance in the selected resin according to the exposure energy data. In this embodiment, the exposure energy data (Eop data) corresponding to the same structure and purity organic base in the 12-1# formula, 12-2# formula, and 12-3# formula of the resins meeting the same factory specifications produced by the same manufacturer but in different batches are 36mj, 45mj, and 53mj, respectively. Since the component contents in the formulas are the same, the relative amount of the residual alkaline substances in the resins produced in different batches is: Q12-3>Q12-2>Q12-1.

[0105] Embodiment 13 This embodiment provides a method for using a photolithography machine to test the relative amount of residual alkaline substances in photoacid generators that meet the same factory specifications and are produced in different batches by the same manufacturer, comprising the following steps: Step 1, preparing a photoresist sample according to a photoresist formula; the photoresist formula includes an organic base, a photoacid generator (PAG), a resin, a leveling agent, and a solvent; the photoresist formula in this embodiment is detailed in Table 13: Table 13 Test of the relative amount of alkaline substances in the photoacid generator produced by the same manufacturer in different batches to meet the same factory specifications. Step 2, the photoresist sample is subjected to a photolithography test using a photolithography machine according to the photolithography process to obtain exposure energy data (Eop data) of the photoresist sample; the equipment used in the photolithography process includes: a coating developer, a photolithography machine, and a FEB length measuring instrument, specifically: coating developer: LITHIUS Pro Z; photolithography machine: ASML TWINSCAN 860; FEB length measuring instrument: CD-SEM CG6300; the conditions of the photolithography process are: HMDS: On; PAB: 120℃60s; Thickness: 1800Å; TARC: AQ8A, 430Å, 90℃60s; Illumination mode: Annular, NA 0.78, σout=0.7, σin=0.3; PEB: 135℃90s; DEV: single puddle 15s; Anchor Point: S140nmP280; finally, the exposure energy data (Eop data) in the three groups of formula samples in this embodiment are obtained; step 3, according to the exposure energy data, the relative size of the residual amount of alkaline substances in the selected photoacid generator is obtained; in this embodiment, the same structure and purity organic base is used in the photoacid generators produced by the same manufacturer and different batches and meeting the same factory indicators. The corresponding exposure energy data (Eop data) in 12-1# formula, 12-2# formula, and 12-3# formula are 41mj, 36mj, and 35mj respectively. Since the content of the components in the formulas is the same, the relative size of the residual amount of alkaline substances contained in the photoacid generators produced in different batches is: P13-1>P13-2>P13-3.

[0106] It should be understood that the present invention is not limited to what has been described above and that various modifications and changes may be made without departing from its scope. The scope of the present invention is limited only by the appended claims.

Claims

1. A method for testing alkali purity, alkali strength and alkali residue using a photolithography machine, characterized in that: The steps include: Step 1, preparing a photoresist sample according to a photoresist recipe; The photoresist formula includes an organic base, a photoacid generator, a resin, a leveling agent, and a solvent; Step 2, performing a photolithography test on the photoresist sample using a photolithography machine according to a photolithography process to obtain exposure energy data of the photoresist sample; Step 3, obtaining the relative size of the base purity of the selected organic base, the relative size of the basic strength of the organic base, or the relative size of the base residue of the basic substances contained in the remaining components of the photoresist formula except the organic base according to the exposure energy data; Wherein, when the structures of the organic bases are consistent, the base purity of the organic bases increases with the increase of the exposure energy data; When the structures of the organic bases are inconsistent, the basicity strength of the organic bases decreases as the exposure energy data increases; When the base purity of the organic base of the same structure is the same, the base residue of the alkaline substances contained in the other components of the photoresist formula except the organic base increases with the increase of the exposure energy data.

2. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The organic base in step 1 includes one or more of pyridine compounds, tertiary amines, alicyclic amines, tetraalkylammonium hydroxides, and vinylpyridine polymers.

3. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The alkaline substance in step 1 includes one or more of pyridine compounds, tertiary amines, alicyclic amines, tetraalkylammonium hydroxides, and vinylpyridine polymers.

4. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The photoacid generator in step 1 includes one or more of sulfonium salt ionic photoacid generators, iodonium salt ionic photoacid generators, sulfonyldiazomethane molecular photoacid generators, sulfonyloxyimide molecular photoacid generators, polyphenol sulfonate molecular photoacid generators, nitrobenzyl sulfonate molecular photoacid generators, glyoxime molecular photoacid generators, and di-(trichloromethane)-triazine molecular photoacid generators.

5. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The resin in step 1 is a copolymer or a homopolymer, with a molecular weight Mw of 3000-100,000 and a molecular weight distribution index PDI value of 1.02-3.

6. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The leveling agent is a surfactant.

7. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: The solvent in step 1 is one or more of a carboxylic acid ester solvent, a ketone solvent, an ether solvent, and a cyclic amide solvent.

8. The method for testing alkali purity, alkali strength and alkali residue using a photolithography machine according to claim 1, characterized in that: In terms of weight percentage, the proportion of each component in the photoresist formula is as follows: photoacid generator: 0.001-0.3%; Organic base: 0.01-0.5%; Resin: 1-50%; Leveling agent: 0.002%; Solvent: 50-90%.

9. An application of the method for testing alkali purity, alkali strength and alkali residue using a photolithography machine as claimed in any one of claims 1 to 8, characterized in that: The method is used to test the purity and basicity strength of organic bases.

10. A database, characterized in that: The database includes test results after testing using the method for testing alkali purity, alkali strength and alkali residue using a photolithography machine as described in any one of claims 1-8.

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