Novel ultrahigh-precision band-gap reference source
By injecting curvature compensation current and polyline compensation current into the reference voltage generation module, the existing high-precision bandgap reference source has been solved, and the problem of low accuracy and compensation effect is affected by the process angle is achieved, and an ultra-high-precision bandgap reference voltage is achieved.
Patent Information
- Application Number
- CN202510209340.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2025-04-15
AI Technical Summary
After using curvature compensation technology for existing high-precision bandgap reference sources, the reference accuracy is still low and the compensation effect is greatly affected by the process angle.
A new ultra-high-precision bandgap reference source is adopted to inject curvature compensation current and polyline compensation current into the reference voltage generation module to reduce the nonlinearity in the reference voltage, thereby achieving an ultra-high-precision bandgap reference voltage.
It realizes an ultra-high-precision bandgap reference voltage, and the compensation effect is basically not affected by process angle changes, and is suitable for ultra-high-precision bandgap reference source design.
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Figure CN119828843A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of analog integrated circuits, and in particular relates to a novel ultra-high precision bandgap reference source. Background Art
[0002] Existing high-precision bandgap reference sources usually only use one curvature compensation technology to improve the reference accuracy, such as broken line compensation technology, transistor specific current bias compensation technology, etc. These high-precision bandgap reference circuits have two main disadvantages: on the one hand, the curvature compensation effect is greatly affected by the process angle; on the other hand, the accuracy of the reference after compensation is still relatively low. Summary of the invention
[0003] In order to solve the above problems, the present invention proposes a novel ultra-high precision bandgap reference source.
[0004] The technical solution of the present invention is: a new type of ultra-high precision bandgap reference source, including a reference voltage generating module, a curvature compensation current generating module and a zigzag compensation current generating module. By injecting the curvature compensation current and the zigzag compensation current into the reference voltage generating module, the nonlinearity in the reference voltage can be greatly reduced, and an ultra-high precision bandgap reference voltage can be achieved, and the compensation effect is basically not affected by changes in the process angle.
[0005] Furthermore, the reference voltage is generated by a novel bandgap reference core circuit, and the curvature compensation current and the broken line compensation current are generated by a novel current generator. The novel bandgap reference core circuit and the current generator include an operational amplifier OP1, an output driver Buffer, transistors Q1-Q 10 , resistor R1-R 12 , positive temperature coefficient current source I PTAT1 -I PTAT2 ;
[0006] The emitter of the transistor Q4, the emitter of the transistor Q5, the collector of the transistor Q8, the resistor R 10 Positive pole, positive temperature coefficient current source I PTAT2 The positive electrodes of the transistors Q1, Q9, R6, R8, R9, R1 and R2 are connected to the power supply voltage VDD; the emitter of the transistor Q1, the emitter of the transistor Q9, the negative electrode of the resistor R6, the negative electrode of the resistor R8, the negative electrode of the resistor R9, the negative electrode of the resistor R 12 Negative pole, positive temperature coefficient current source I PTAT1 The negative electrodes of the resistors R1 and R4 are connected to the ground; the positive electrode of the resistor R1 is connected to the positive electrode of the resistor R4, and the connection point is also connected to the positive electrode of the resistor R5, the positive electrode of the resistor R7, the base of the transistor Q7, and the output electrode of the output driver Buffer; the negative electrode of the resistor R1 is connected to the positive electrode of the resistor R2, and the connection point is also connected to the collector of the transistor Q5, the collector of the transistor Q7, and the output electrode of the transistor Q 10The collector of the transistor Q3 is connected; the negative electrode of the resistor R2 is connected to the positive electrode of the resistor R3, and the connection point is also connected to the base of the transistor Q3; the negative electrode of the resistor R3 is connected to the base and collector of the transistor Q1, and the connection point is also connected to the base of the transistor Q2; the negative electrode of the resistor R4 is connected to the collector of the transistor Q3, and the connection point is also connected to the positive input electrode of the operational amplifier OP1; the emitter of the transistor Q3 is connected to the positive electrode of the resistor R6, and the connection point is also connected to the emitter of the transistor Q2; the resistor The cathode of R5 is connected to the collector of transistor Q2, and the connection point is also connected to the negative phase input of operational amplifier OP1; the output of operational amplifier OP1 is connected to the input of output driver Buffer; the cathode of resistor R7 is connected to the anode of resistor R8, and the connection point is also connected to the base of transistor Q6; the base and collector of transistor Q4 are connected to the base of transistor Q5, and the connection point is also connected to the collector of transistor Q6; the emitter of transistor Q6 is connected to the positive temperature coefficient current source I PTAT1 The positive temperature coefficient current source I PTAT2 The cathode of the transistor Q8 is connected to the anode of the resistor R9, and the connection point is also connected to the base of the transistor Q8; the emitter of the transistor Q8 and the resistor R 11 The negative electrode is connected to the resistor R 12 The positive electrode of the resistor R 10 The negative electrode is connected to the base and collector of transistor Q9, and the connection point is also connected to the base and collector of transistor Q 10 The base of the transistor Q 10 The emitter and resistor R 11 The positive electrode is connected.
[0007] The beneficial effects of the present invention are: strong practicability, good compensation effect, and suitability for the design of ultra-high precision bandgap reference source. BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Figure 1 This is a schematic diagram of the structure of a new ultra-high precision bandgap reference source;
[0009] Figure 2 It is a new bandgap reference core circuit and a new current generator. DETAILED DESCRIPTION
[0010] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0011] like Figure 1As shown, the present invention proposes a novel ultra-high precision bandgap reference source, including a reference voltage generating module, a curvature compensation current generating module and a zigzag compensation current generating module. By injecting the curvature compensation current and the zigzag compensation current into the reference voltage generating module, the nonlinearity in the reference voltage can be greatly reduced, and an ultra-high precision bandgap reference voltage can be achieved, and the compensation effect is basically not affected by changes in the process angle.
[0012] In the embodiment of the present invention, Figure 2 As shown, the reference voltage is generated by a novel bandgap reference core circuit, and the curvature compensation current and the broken line compensation current are generated by a novel current generator. The novel bandgap reference core circuit and the current generator include an operational amplifier OP1, an output driver Buffer, and transistors Q1-Q 10 , resistor R1-R 12 , positive temperature coefficient current source I PTAT1 -I PTAT2 ;
[0013] The emitter of the transistor Q4, the emitter of the transistor Q5, the collector of the transistor Q8, the resistor R 10 Positive pole, positive temperature coefficient current source I PTAT2 The positive electrodes of the transistors Q1, Q9, R6, R8, R9, R1 and R2 are connected to the power supply voltage VDD; the emitter of the transistor Q1, the emitter of the transistor Q9, the negative electrode of the resistor R6, the negative electrode of the resistor R8, the negative electrode of the resistor R9, the negative electrode of the resistor R 12 Negative pole, positive temperature coefficient current source I PTAT1 The negative electrodes of the resistors R1 and R4 are connected to the ground; the positive electrode of the resistor R1 is connected to the positive electrode of the resistor R4, and the connection point is also connected to the positive electrode of the resistor R5, the positive electrode of the resistor R7, the base of the transistor Q7, and the output electrode of the output driver Buffer; the negative electrode of the resistor R1 is connected to the positive electrode of the resistor R2, and the connection point is also connected to the collector of the transistor Q5, the collector of the transistor Q7, and the output electrode of the transistor Q 10The collector of the transistor Q3 is connected; the negative electrode of the resistor R2 is connected to the positive electrode of the resistor R3, and the connection point is also connected to the base of the transistor Q3; the negative electrode of the resistor R3 is connected to the base and collector of the transistor Q1, and the connection point is also connected to the base of the transistor Q2; the negative electrode of the resistor R4 is connected to the collector of the transistor Q3, and the connection point is also connected to the positive input electrode of the operational amplifier OP1; the emitter of the transistor Q3 is connected to the positive electrode of the resistor R6, and the connection point is also connected to the emitter of the transistor Q2; the resistor The cathode of R5 is connected to the collector of transistor Q2, and the connection point is also connected to the negative phase input of operational amplifier OP1; the output of operational amplifier OP1 is connected to the input of output driver Buffer; the cathode of resistor R7 is connected to the anode of resistor R8, and the connection point is also connected to the base of transistor Q6; the base and collector of transistor Q4 are connected to the base of transistor Q5, and the connection point is also connected to the collector of transistor Q6; the emitter of transistor Q6 is connected to the positive temperature coefficient current source I PTAT1 The positive temperature coefficient current source I PTAT2 The cathode of the transistor Q8 is connected to the anode of the resistor R9, and the connection point is also connected to the base of the transistor Q8; the emitter of the transistor Q8 and the resistor R 11 The negative electrode is connected to the resistor R 12 The positive electrode is connected; the resistor R 10 The negative electrode is connected to the base and collector of transistor Q9, and the connection point is also connected to the base and collector of transistor Q 10 The base of the transistor Q 10 The emitter and resistor R 11 The positive electrode is connected.
[0014] Those skilled in the art will appreciate that the embodiments described herein are intended to help readers understand the principles of the present invention, and should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific variations and combinations that do not deviate from the essence of the present invention based on the technical revelations disclosed by the present invention, and these variations and combinations are still within the protection scope of the present invention.
Claims
1. A new type of ultra-high precision bandgap reference source, characterized in that: It includes a reference voltage generating module, a curvature compensation current generating module and a zigzag compensation current generating module. By injecting the curvature compensation current and the zigzag compensation current into the reference voltage generating module, the nonlinearity in the reference voltage can be greatly reduced, and an ultra-high-precision bandgap reference voltage can be achieved. The compensation effect is basically not affected by changes in the process angle.
2. The novel ultra-high precision bandgap reference source according to claim 1, characterized in that: The reference voltage is generated by a novel bandgap reference core circuit, and the curvature compensation current and the broken line compensation current are generated by a novel current generator. The novel bandgap reference core circuit and the current generator include an operational amplifier OP1, an output driver Buffer, transistors Q1-Q 10 , resistor R1-R 12 , positive temperature coefficient current source I PTAT1 -I PTAT2 ; The emitter of the transistor Q4, the emitter of the transistor Q5, the collector of the transistor Q8, the resistor R 10 Positive pole, positive temperature coefficient current source I PTAT2 The positive electrodes of the transistors Q1, Q9, R6, R8, R9, R1 and R2 are connected to the power supply voltage VDD; the emitter of the transistor Q1, the emitter of the transistor Q9, the negative electrode of the resistor R6, the negative electrode of the resistor R8, the negative electrode of the resistor R9, the negative electrode of the resistor R 12 Negative pole, positive temperature coefficient current source I PTAT1 The negative electrodes of the resistors R1 and R4 are connected to the ground; the positive electrode of the resistor R1 is connected to the positive electrode of the resistor R4, and the connection point is also connected to the positive electrode of the resistor R5, the positive electrode of the resistor R7, the base of the transistor Q7, and the output electrode of the output driver Buffer; the negative electrode of the resistor R1 is connected to the positive electrode of the resistor R2, and the connection point is also connected to the collector of the transistor Q5, the collector of the transistor Q7, and the output electrode of the transistor Q 10 The collector of the transistor Q3 is connected; the negative electrode of the resistor R2 is connected to the positive electrode of the resistor R3, and the connection point is also connected to the base of the transistor Q3; the negative electrode of the resistor R3 is connected to the base and collector of the transistor Q1, and the connection point is also connected to the base of the transistor Q2; the negative electrode of the resistor R4 is connected to the collector of the transistor Q3, and the connection point is also connected to the positive input electrode of the operational amplifier OP1; the emitter of the transistor Q3 is connected to the positive electrode of the resistor R6, and the connection point is also connected to the emitter of the transistor Q2; the resistor The cathode of R5 is connected to the collector of transistor Q2, and the connection point is also connected to the negative phase input of operational amplifier OP1; the output of operational amplifier OP1 is connected to the input of output driver Buffer; the cathode of resistor R7 is connected to the anode of resistor R8, and the connection point is also connected to the base of transistor Q6; the base and collector of transistor Q4 are connected to the base of transistor Q5, and the connection point is also connected to the collector of transistor Q6; the emitter of transistor Q6 is connected to the positive temperature coefficient current source I PTAT1 The positive temperature coefficient current source I PTAT2 The cathode of the transistor Q8 is connected to the anode of the resistor R9, and the connection point is also connected to the base of the transistor Q8; the emitter of the transistor Q8 and the resistor R 11 The negative electrode is connected to the resistor R 12 The positive electrode of the resistor R 10 The negative electrode is connected to the base and collector of transistor Q9, and the connection point is also connected to the base and collector of transistor Q 10 The base of the transistor Q 10 The emitter and resistor R 11 The positive electrode is connected.