Total dose effect simulation modeling method of multilayer microsystem interconnection module based on TSV (Through Silicon Via)

Abstract

The invention discloses a TSV-based multi-layer microsystem interconnection module total dose effect simulation modeling method, and relates to the technical field of three-dimensional integrated microsystems, and the method comprises the steps: obtaining geometric parameters and material parameters of a multi-layer three-dimensional microsystem interconnection module, building a finite element model of a microsystem module based on the geometric parameters and the material parameters, and carrying out the simulation modeling of the TSV-based multi-layer microsystem interconnection module total dose effect. Setting boundary conditions and port excitation; scattering parameters under different material conditions in the finite element model are extracted, frequency points are fixed, and a relational expression of the scattering parameters and material parameters is established; an RLC equivalent circuit model is constructed, and an equivalent circuit extraction method is obtained; according to an equivalent circuit extraction method, in combination with a relational expression of scattering parameters and material parameters, establishing a relationship between return loss parameters and equivalent circuit parameters; and establishing a relation model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit according to the relation between the return loss parameter and the equivalent circuit parameter. According to the invention, a scientific basis is provided for the reliability design of the three-dimensional microsystem in the radiation environment.

Description

Technical Field

[0001] The invention relates to the technical field of three-dimensional integrated microsystem, and in particular to a total dose effect simulation modeling method of a multi-layer microsystem interconnection module based on TSV. Background Art

[0002] Three-dimensional integration technology stacks and interconnects multiple chips to form a highly integrated microsystem module to improve circuit integration and performance. This technology greatly reduces signal transmission delay and optimizes system power consumption and packaging volume. The introduction of through silicon via (TSV) technology has achieved vertical chip interconnection, which is the key to three-dimensional integration technology. However, the complexity of structures such as TSV and the multi-layer characteristics of microsystem modules also bring challenges to reliability research in radiation environments.

[0003] In the space radiation environment, three-dimensional microsystems will be significantly affected by the total dose radiation effect. This effect will lead to the degradation of material properties and the decline of circuit performance, such as changes in conductivity and dielectric constant, and ultimately affect the overall function of the module. There are few studies on three-dimensional multilayer structures in the prior art.

[0004] Currently, finite element analysis software and circuit simulation tools are widely used for electrical performance analysis of microsystems. However, these tools still have the following shortcomings when analyzing the relationship between radiation dose and circuit performance:

[0005] 1. Lack of radiation modeling methods for TSV multi-layer structures.

[0006] 2. Failure to establish a complete model for the correlation between material parameters and scattering parameters.

[0007] 3. The comprehensive impact of radiation dose on equivalent circuit parameters (RLC) is not sufficiently quantified.

[0008] Therefore, a systematic approach is needed to provide theoretical and technical support for the reliability research of multi-layer three-dimensional microsystem interconnect modules in radiation environment. Summary of the invention

[0009] The present invention aims to solve the deficiencies in the reliability research of multi-layer three-dimensional microsystem interconnection modules in radiation environment, and proposes a total dose effect simulation modeling method of multi-layer microsystem interconnection modules based on TSV, which can realize the accurate prediction of the electrical performance of multi-layer three-dimensional microsystem interconnection modules under different radiation doses and frequencies, and provide a scientific basis for the reliability design of three-dimensional microsystems in radiation environment.

[0010] On the one hand, to achieve the above-mentioned purpose, the present invention provides a total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV, comprising:

[0011] Obtaining geometric parameters and material parameters of a multi-layer three-dimensional microsystem interconnect module, wherein the geometric parameters and material parameters include the radius, length, filling material and insulating layer of the TSV, the width, height and material properties of the redistribution layer RDL, and the conductivity and dielectric constant of the material;

[0012] Constructing a finite element model of a microsystem module including TSV, microbumps, and a rewiring structure based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnect module, and setting boundary conditions and port excitations;

[0013] Extracting scattering parameters under different material conditions in the finite element model, fixing the frequency point, and establishing a relationship between the scattering parameters and the material parameters;

[0014] Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method;

[0015] According to the equivalent circuit extraction method, in combination with the relationship between the scattering parameters and the material parameters, a relationship between the return loss parameters and the equivalent circuit parameters is established;

[0016] Based on the relationship between the return loss parameter and the equivalent circuit parameter, a total dose radiation experiment with different radiation doses is performed to test the scattering parameter, and a relationship between the radiation dose and the scattering parameter is established;

[0017] According to the relationship between the return loss parameter and the equivalent circuit parameter, a relationship model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit is established.

[0018] Preferably, a finite element model of a microsystem module including TSV, micro-bumps, and a rewiring structure is constructed, and boundary conditions and port excitations are set, including:

[0019] Using HFSS software to construct a finite element model of a microsystem module including the TSV, micro-bumps, and rewiring structures based on the geometric parameters and the material parameters;

[0020] The boundary conditions include the electrical conductivity, dielectric constant and magnetic permeability of the material; and the frequency range of the port excitation is set to 0.1 GHz-26.5 GHz.

[0021] Preferably, establishing the relationship between the scattering parameter and the material parameter comprises:

[0022] By adjusting the material parameters in the HFSS software, scattering parameters under different material conditions are extracted; wherein the material parameters in the HFSS software include copper conductivity, silicon dielectric constant and silicon dioxide dielectric constant;

[0023] At a fixed frequency point, a polynomial fitting method is used to establish the relationship between the scattering parameters and the material parameters, specifically:

[0024] Relationship between scattering parameters and conductivity: S11 = aμ² + bμ + c;

[0025] Relationship between scattering parameters and dielectric constant: S11 = aε² + bε + c;

[0026] Where a, b, c are fitting parameters, μ is conductivity, ε is dielectric constant, and S11 is return loss.

[0027] Preferably, constructing the RLC equivalent circuit model includes:

[0028] Based on the ADS compilation environment and geometric model, the circuit parameters of RDL, TSV and BUMP are extracted through equivalent analysis of module parameters, the equivalent method of key parameters of parasitic resistance, capacitance and inductance is clarified, and the RLC equivalent circuit model is established.

[0029] Preferably, the method for extracting the RDL circuit parameters is:

[0030] ;

[0031] ;

[0032] ;

[0033] In the formula, is the total resistance of RDL, is the RDL DC resistance, is the RDL AC resistance, is the skin depth, is the resistivity of the material used for the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, The conductivity of the material used for the RDL layer;

[0034] ;

[0035] Where μ0 is the vacuum magnetic permeability, μ r,RDL is the relative magnetic permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductor;

[0036] The capacitance of the insulating layer below RDL, C RDLtoSub for:

[0037] ;

[0038] RDL is equivalent to the capacitance C in silicon RDLinSub for:

[0039] ;

[0040] In the formula, ε RDLox is the dielectric constant of the insulating layer below the RDL, t RDLox is the height of the insulating layer below the RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of RDL, and ε0 is the relative dielectric constant.

[0041] Preferably, the method for extracting the TSV circuit parameters is:

[0042] ;

[0043] ;

[0044] ;

[0045] ;

[0046] In the formula, ρ TSV is the resistivity of TSV material, h TSV is the TSV height, r TSV is the TSV radius, is the TSV DC resistance, is the TSV AC resistance, δ skin-depth-TSV represents the depth of the current in the TSV, is the Bump DC resistance, is the resistivity of the bump material, h Bump is the bump height, r Bump is the Bump radius, is the Bump AC resistance, δ skin-depth-Bump Indicates the depth of the current in the bump;

[0047] ;

[0048] In the formula, is the Bump inductance, μ0 is the vacuum permeability, is the relative magnetic permeability of the Bump material, h Bump is the bump height, P TSV is the TSV center distance, d Bump is the bump diameter;

[0049] ;

[0050] ;

[0051] ;

[0052] in, is the parasitic capacitance between TSV and Underfill layer, is the parasitic capacitance between TSV and IMD layer, is the parasitic capacitance of the Bump and Underfill layers, p TSV is the TSV center distance, d TSV is the TSV diameter, h Bump Bump height, d Bump is the bump diameter, h IMD is the height of the IMD layer, t ox_bot is the bottom oxide layer height, ε r,Underfill is the dielectric constant of the Underfill layer, ε r,IMD is the dielectric constant of the IMD layer, ε r,ox,bot is the dielectric constant of the RDL bottom oxide layer, is the inverse hyperbolic cosine function.

[0053] Preferably, the relationship between the radiation dose and the scattering parameter is:

[0054] S11=aD 3 +bD 2 +cD+d;

[0055] Where a, b, c, d are fitting coefficients, D is the radiation dose, and S11 is the return loss.

[0056] Preferably, the method further comprises:

[0057] Taking the equivalent circuit parameters under different radiation dose conditions as input, the circuit simulation is performed in the ADS simulation environment to obtain the scattering parameters;

[0058] Conduct error analysis between simulation results and experimental data to verify the accuracy of the model;

[0059] Among them, R² is used as the matching degree between the model and the experimental data, and the calculation method of R² is:

[0060] ;

[0061] In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean.

[0062] Preferably, the multi-layer three-dimensional microsystem interconnection module includes a TSV structure, an RDL structure and a BUMP structure.

[0063] On the other hand, to achieve the above-mentioned purpose, the present invention also provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the total dose effect simulation modeling method of the TSV-based multi-layer microsystem interconnection module is implemented.

[0064] Compared with the prior art, the present invention has the following advantages and technical effects:

[0065] (1) The present invention can describe multi-layer three-dimensional structures under different radiation doses and frequencies, and achieve high-precision prediction of electrical performance, significantly improving the accuracy of modeling and simulation. By combining HFSS and ADS simulation tools, a correlation model between material parameters and scattering parameters, and radiation dose and equivalent circuit parameters is constructed;

[0066] (2) The present invention quantifies the effect of radiation dose on key parameters such as resistance, inductance, and capacitance, and can describe the changes in electrical characteristics under different radiation dose conditions; it optimizes the reliability design of multi-layer three-dimensional structures in radiation environments, provides a scientific basis for reliability evaluation and optimization of modules, and significantly reduces design errors and experimental costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0068] Figure 1 A flow chart of a total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to an embodiment of the present invention;

[0069] Figure 2 A schematic diagram of the geometric structure of a multi-layer three-dimensional microsystem interconnection module according to an embodiment of the present invention;

[0070] Figure 3 is a curve diagram showing the relationship between conductivity and scattering parameters according to an embodiment of the present invention;

[0071] Figure 4 Plotting experimental data of embodiments of the present invention;

[0072] Figure 5 A curve diagram showing the relationship between radiation dose and scattering parameter changes in an embodiment of the present invention;

[0073] Figure 6 A comparison curve of experimental and simulated scattering parameters of an embodiment of the present invention;

[0074] Figure 7 This is an error verification diagram of an embodiment of the present invention. DETAILED DESCRIPTION

[0075] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0076] It should be noted that the steps shown in the flowcharts of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and that, although a logical order is shown in the flowcharts, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0077] The present invention proposes a total dose effect simulation modeling method based on TSV multi-layer microsystem interconnection module, such as Figure 1 ,include:

[0078] Obtaining geometric parameters and material parameters of a multi-layer three-dimensional microsystem interconnect module, wherein the geometric parameters and material parameters include the radius, length, filling material and insulating layer of TSV, the width, height and material properties of the redistribution layer RDL, and the conductivity and dielectric constant of the material;

[0079] Based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnect module, a finite element model of the microsystem module including TSV, micro-bumps, and rewiring structure is constructed, and boundary conditions and port excitations are set;

[0080] Extract the scattering parameters under different material conditions in the finite element model, fix the frequency point, and establish the relationship between the scattering parameters and the material parameters;

[0081] Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method;

[0082] According to the equivalent circuit extraction method, in combination with the relationship between the scattering parameters and the material parameters, a relationship between the return loss parameters and the equivalent circuit parameters is established;

[0083] Based on the relationship between the return loss parameter and the equivalent circuit parameter, a total dose radiation experiment with different radiation doses is performed to test the scattering parameter, and a relationship between the radiation dose and the scattering parameter is established;

[0084] According to the relationship between the return loss parameters and the equivalent circuit parameters, a relationship model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit is established.

[0085] In view of the complexity of the multi-layer structure including TSV, RDL and BUMP, this embodiment uses finite element modeling and polynomial fitting technology to establish a correlation model between material parameters and scattering parameters, which makes up for the problem of insufficient correlation between material properties and electrical performance in the prior art. Through this method, it is possible to accurately predict the electrical performance of multi-layer three-dimensional microsystem interconnect modules under different radiation doses and frequencies, providing a scientific basis for the reliability design of three-dimensional microsystems in radiation environments. Figure 2 Schematic diagram of the geometric structure of the multi-layer three-dimensional microsystem interconnection module.

[0086] Furthermore, a finite element model of a microsystem module including TSV, micro-bumps, and rewiring structures is constructed, and boundary conditions and port excitations are set including:

[0087] Using HFSS software to construct a finite element model of a microsystem module including TSV, micro-bumps, and a rewiring structure based on the geometric parameters and the material parameters;

[0088] Boundary conditions are set, which in this embodiment include the electrical conductivity, dielectric constant and magnetic permeability of the material.

[0089] The port excitation is set, and in this embodiment the frequency range is set to 0.1-26.5 GHz.

[0090] Furthermore, the relationship between the scattering parameters and the material parameters is established as follows:

[0091] By adjusting the material parameters in HFSS (copper conductivity, silicon dielectric constant, silicon dioxide dielectric constant), the scattering parameters under different material conditions are extracted.

[0092] At a fixed frequency point, the polynomial fitting method is used to establish the relationship between scattering parameters and material parameters:

[0093] Relationship between scattering parameters and conductivity: S11 = aμ² + bμ + c;

[0094] Relationship between scattering parameters and dielectric constant: S11 = aε² + bε + c;

[0095] Where a, b, c are fitting parameters, μ is conductivity, ε is dielectric constant, and S11 is return loss.

[0096] Furthermore, constructing the RLC equivalent circuit model includes:

[0097] Based on the ADS compilation environment and geometric model, the circuit parameters of RDL, TSV and BUMP are extracted through equivalent analysis of module parameters, the equivalent method of key parameters of parasitic resistance, capacitance and inductance is clarified, and the RLC equivalent circuit model is established.

[0098] Specifically, the method for extracting RDL circuit parameters is:

[0099] ;

[0100] ;

[0101] ;

[0102] In the formula, is the total resistance of RDL, is the RDL DC resistance, is the RDL AC resistance, is the skin depth, is the resistivity of the material used for the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, The conductivity of the material used for the RDL layer;

[0103] ;

[0104] Where μ0 is the vacuum magnetic permeability, μ r,RDL is the relative magnetic permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductor;

[0105] The capacitance of the insulating layer below RDL, C RDLtoSub for:

[0106] ;

[0107] RDL is equivalent to the capacitance C in silicon RDLinSub for:

[0108] ;

[0109] In the formula, ε RDLox is the dielectric constant of the insulating layer below the RDL, t RDLox is the height of the insulating layer below the RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of RDL, and ε0 is the relative dielectric constant.

[0110] The method for extracting the TSV circuit parameters is:

[0111] ;

[0112] ;

[0113] ;

[0114] ;

[0115] In the formula, ρ TSV is the resistivity of TSV material, h TSV is the TSV height, r TSV is the TSV radius, is the TSV DC resistance, is the TSV AC resistance, δ skin-depth-TSV represents the depth of the current in the TSV, is the Bump DC resistance, is the resistivity of the bump material, h Bump is the bump height, r Bump is the Bump radius, is the Bump AC resistance, δ skin-depth-Bump Indicates the depth of the current in the bump;

[0116] ;

[0117] In the formula, is the Bump inductance, μ0 is the vacuum permeability, is the relative magnetic permeability of the Bump material, h Bump is the bump height, P TSV is the TSV center distance, d Bump is the bump diameter;

[0118] The parasitic capacitance C between the TSV conductor and the surrounding medium IMD , C Underfill and C Bottom Both can be obtained through the parallel cylinder capacitance model:

[0119] ;

[0120] ;

[0121] ;

[0122] in, is the parasitic capacitance between TSV and Underfill layer, is the parasitic capacitance between TSV and IMD layer, is the parasitic capacitance of the Bump and Underfill layers, p TSV is the TSV center distance, d TSV is the TSV diameter, h Bump Bump height, d Bump is the bump diameter, hIMD is the height of the IMD layer, t ox_bot is the bottom oxide layer height, ε r,Underfill is the dielectric constant of the Underfill layer, ε r,IMD is the dielectric constant of the IMD layer, ε r,ox,bot is the dielectric constant of the RDL bottom oxide layer, is the inverse hyperbolic cosine function.

[0123] Furthermore, according to the equivalent circuit extraction method, combined with the relationship between scattering parameters and material parameters, the relationship between S parameters and equivalent circuit parameters (R, L, C) is established to identify the key coefficients;

[0124] Total dose radiation experiments with different radiation doses (100 krad, 300 krad, 500 krad, 900 krad) were performed. In this embodiment, a network analyzer (VNA) was used to test the scattering parameters to ensure the accuracy of the data.

[0125] Furthermore, the relationship between radiation dose and scattering parameters is established based on experimental data using a polynomial fitting method;

[0126] The relationship between radiation dose and scattering parameters is:

[0127] S11 = aD 3 + bD 2 +cD+d;

[0128] Where a, b, c, d are fitting coefficients, D is the radiation dose, and S11 is the return loss.

[0129] Furthermore, the method further comprises:

[0130] Taking the equivalent circuit parameters under different radiation dose conditions as input, the circuit simulation is performed in the ADS simulation environment to obtain the scattering parameters;

[0131] Conduct error analysis between simulation results and experimental data to verify the accuracy of the model;

[0132] Among them, R² is used as the matching degree between the model and the experimental data, and the calculation method of R² is:

[0133] ;

[0134] In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean;

[0135] ;

[0136] ;

[0137] In the formula, is the actual value of the ith data point, is the model prediction value for the ith data point, is the actual average value.

[0138] This embodiment also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements a total dose effect simulation modeling method for a multi-layer microsystem interconnect module based on TSV.

[0139] In order to more clearly express the technical solution of the present invention, the following specific embodiments are provided to introduce the solution:

[0140] 1. Sample parameter acquisition:

[0141] Extract geometric parameters and material parameters of multi-layer 3D microsystem interconnect modules, including: TSV radius, length, filling material and insulation layer parameters; rewiring layer width, height and material properties; micro-bump size and material parameters; substrate material conductivity and dielectric constant. Use professional measurement equipment to ensure high-precision parameter extraction.

[0142] 2. Geometry model construction:

[0143] In the HFSS simulation environment, a three-dimensional microsystem finite element model including TSV, RDL, BUMP and other structures is established based on the extracted sample parameters. Appropriate boundary conditions and excitation sources are set to ensure that the model can truly simulate the electrical behavior and response in the radiation environment.

[0144] 3. Model for correlation between material parameters and scattering parameters:

[0145] In HFSS, by adjusting the material parameters in the finite element model, the scattering parameter curves under different material conditions are obtained. The key frequency points are selected and the relationship between material parameters and scattering parameters is established using the polynomial fitting method.

[0146] 4. Equivalent circuit model construction:

[0147] In the ADS environment, based on the results of the geometric model analysis, the equivalent circuit parameters of RDL, TSV and BUMP are extracted. An RLC equivalent circuit model is constructed to clarify the parasitic resistance and parasitic capacitance and their calculation methods.

[0148] 5. Correlation model between circuit characteristics and scattering parameters:

[0149] According to the equivalent circuit model extraction method, combined with the correlation model of material parameters and scattering parameters, the relationship between S parameters and RLC equivalent circuit parameters is established. Figure 3 This is a curve diagram showing the relationship between conductivity and scattering parameters.

[0150] 6. Total dose radiation experiment:

[0151] Perform total dose radiation experiment on the sample, set different dose points, and record the scattering parameter curve under radiation environment. Use network analyzer to test to ensure the accuracy of data. Figure 4 Plot the experimental data, where the S21 parameter is one of the scattering parameters, namely the insertion loss.

[0152] 7. Modeling the relationship between radiation dose and scattering parameters:

[0153] Using the polynomial fitting method, the relationship between radiation dose and scattering parameters is established based on experimental data, such as Figure 5 This is a curve diagram showing the relationship between radiation dose and scattering parameters.

[0154] 8. Correlation model between radiation dose and equivalent circuit parameters:

[0155] According to the correlation model between scattering parameters and RLC parameters, a model of the influence of radiation dose on equivalent circuit parameters is further established.

[0156] 9. Model verification and optimization:

[0157] The equivalent circuit parameters under different radiation dose conditions are used as input to perform circuit simulation in the ADS simulation environment. The simulation scattering parameters are obtained and error analysis is performed with the experimental data to optimize the accuracy of the model. Figure 6 This is a comparison curve of experimental and simulated scattering parameters. Figure 7 This is an error verification diagram, where the S21 parameter is an insertion loss in the scattering parameters.

[0158] 10. Comprehensive analysis of multiple frequencies and multiple doses:

[0159] In the HFSS and ADS environments, comprehensive simulation and analysis of multi-frequency and multi-dose conditions are performed to verify the applicability of the model under different electrical conditions and provide comprehensive data support for the reliability design of multi-layer three-dimensional microsystem interconnect modules.

[0160] The above are only preferred specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A total dose effect simulation modeling method for a multi-layer microsystem interconnect module based on TSV, characterized in that: include: Obtaining geometric parameters and material parameters of a multi-layer three-dimensional microsystem interconnect module, wherein the geometric parameters and material parameters include the radius, length, filling material and insulating layer of the TSV, the width, height and material properties of the redistribution layer RDL, and the conductivity and dielectric constant of the material; Based on the geometric parameters and material parameters of the multi-layer three-dimensional microsystem interconnect module, a finite element model of the microsystem module including TSV, micro-bumps, and a rewiring structure is constructed, and boundary conditions and port excitations are set; Extracting scattering parameters under different material conditions in the finite element model, fixing the frequency point, and establishing a relationship between the scattering parameters and the material parameters; Construct an RLC equivalent circuit model and obtain an equivalent circuit extraction method; According to the equivalent circuit extraction method, in combination with the relationship between the scattering parameters and the material parameters, a relationship between the return loss parameters and the equivalent circuit parameters is established; Based on the relationship between the return loss parameter and the equivalent circuit parameter, a total dose radiation experiment with different radiation doses is performed to test the scattering parameter, and a relationship between the radiation dose and the scattering parameter is established; According to the relationship between the return loss parameter and the equivalent circuit parameter, a relationship model between the radiation dose and the resistance, inductance and capacitance in the equivalent circuit is established.

2. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: Construct a finite element model of a microsystem module including TSV, micro-bumps, and rewiring structures, and set boundary conditions and port excitations including: Using HFSS software to construct a finite element model of a microsystem module including the TSV, micro-bumps, and rewiring structures based on the geometric parameters and the material parameters; The boundary conditions include the electrical conductivity, dielectric constant and magnetic permeability of the material; and the frequency range of the port excitation is set to 0.1 GHz-26.5 GHz.

3. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 2, characterized in that: Establishing the relationship between the scattering parameters and the material parameters includes: By adjusting the material parameters in the HFSS software, scattering parameters under different material conditions are extracted; wherein the material parameters in the HFSS software include copper conductivity, silicon dielectric constant and silicon dioxide dielectric constant; At a fixed frequency point, a polynomial fitting method is used to establish the relationship between the scattering parameters and the material parameters, specifically: Relationship between scattering parameters and conductivity: S11 = aμ² + bμ + c; Relationship between scattering parameters and dielectric constant: S11 = aε² + bε + c; Where a, b, c are fitting parameters, μ is conductivity, ε is dielectric constant, and S11 is return loss.

4. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: Constructing the RLC equivalent circuit model includes: Based on the ADS compilation environment and geometric model, the circuit parameters of RDL, TSV and BUMP are extracted through equivalent analysis of module parameters, the equivalent method of key parameters of parasitic resistance, capacitance and inductance is clarified, and the RLC equivalent circuit model is established.

5. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 4, characterized in that: The method of extracting the RDL circuit parameters is: ； ； ； In the formula, is the total resistance of RDL, is the RDL DC resistance, is the RDL AC resistance, is the skin depth, is the resistivity of the material used for the RDL layer, is the length of the RDL layer, is the width of the RDL layer, is the thickness of the RDL layer, The conductivity of the material used for the RDL layer; ； Where μ0 is the vacuum magnetic permeability, μ r,RDL is the relative magnetic permeability of the RDL material, S RDL is the distance between adjacent RDLs, is the RDL inductor; The capacitance of the insulating layer below RDL, C RDLtoSub for: ； RDL is equivalent to the capacitance C in silicon RDLinSub for: ； In the formula, ε RDLox is the dielectric constant of the insulating layer below the RDL, t RDLox is the height of the insulating layer below the RDL, ε eff is the effective dielectric constant, h eff is the effective height, l RDL is the length of RDL, and ε0 is the relative dielectric constant.

6. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 4, characterized in that: The method for extracting the TSV circuit parameters is: ； ； ； ； In the formula, ρ TSV is the resistivity of TSV material, h TSV is the TSV height, r TSV is the TSV radius, is the TSV DC resistance, is the TSV AC resistance, δ skin-depth-TSV represents the depth of the current in the TSV, is the Bump DC resistance, is the resistivity of the bump material, h Bump is the bump height, r Bump is the Bump radius, is the Bump AC resistance, δ skin-depth-Bump Indicates the depth of the current in the bump; ； In the formula, is the Bump inductance, μ0 is the vacuum permeability, is the relative magnetic permeability of the Bump material, h Bump is the bump height, P TSV is the TSV center distance, d Bump is the bump diameter; ； ； ； in, is the parasitic capacitance between TSV and Underfill layer, is the parasitic capacitance between TSV and IMD layer, is the parasitic capacitance of the Bump and Underfill layers, p TSV is the TSV center distance, d TSV is the TSV diameter, h Bump Bump height, d Bump is the bump diameter, h IMD is the height of the IMD layer, t ox_bot is the bottom oxide layer height, ε r,Underfill is the dielectric constant of the Underfill layer, ε r,IMD is the dielectric constant of the IMD layer, ε r,ox,bot is the dielectric constant of the RDL bottom oxide layer, is the inverse hyperbolic cosine function.

7. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The relationship between the radiation dose and the scattering parameter is: S11=aD 3 +bD 2 +cD+d; Where a, b, c, d are fitting coefficients, D is the radiation dose, and S11 is the return loss.

8. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The method further comprises: Taking the equivalent circuit parameters under different radiation dose conditions as input, the circuit simulation is performed in the ADS simulation environment to obtain the scattering parameters; Conduct error analysis between simulation results and experimental data to verify the accuracy of the model; Among them, R² is used as the matching degree between the model and the experimental data, and the calculation method of R² is: ； In the formula, SSE represents the square difference between the model prediction value and the actual value, and SST represents the square difference between the data point and the data mean.

9. The total dose effect simulation modeling method of a multi-layer microsystem interconnect module based on TSV according to claim 1, characterized in that: The multi-layer three-dimensional microsystem interconnection module includes a TSV structure, an RDL structure and a BUMP structure.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the total dose effect simulation modeling method of a TSV-based multi-layer microsystem interconnect module according to any one of claims 1 to 9 is implemented.

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