Process simulation method and system for three-dimensional chip

Abstract

The invention relates to the technical field of process simulation, and particularly discloses a process simulation method and system for a three-dimensional chip, and the method comprises the following steps: S1, obtaining a processing period, selecting a plurality of nodes according to a set time interval threshold value, and obtaining the physical parameters and environment indexes of each node; associating the physical parameters with the corresponding environment indexes to form processing data; s2, collecting all historical processing data, numbering each node, and generating a processing change curve of physical parameters changing along with time; calculating the average change rate of the curves, and generating a parameter change curve in combination with associated environment index values in historical data; s3, acquiring an environment index in the simulation process, and comparing the environment index with an environment index in the historical processing data; and S4, continuously monitoring physical parameters to obtain a current processing change curve and an average change rate thereof, and calculating a difference value.

Description

Technical Field

[0001] The present invention relates to the technical field of process simulation, and in particular to a process simulation method and system for a three-dimensional chip. Background Art

[0002] Process simulation is the realistic reproduction of a specific process in a three-dimensional virtual environment, allowing users to operate process equipment or modify related parameters in real time. It uses computer technology to generate a realistic virtual environment through which various process flows in the semiconductor manufacturing process can be simulated. This simulation technology can efficiently model and simulate the entire process flow, thereby helping engineers discover and solve potential problems in the design stage.

[0003] The process simulation of three-dimensional chips is a simulation process based on computer technology, which is used to predict and optimize various physical and chemical phenomena in the semiconductor manufacturing process. It uses computer technology to generate a realistic virtual environment through which various process flows in the semiconductor manufacturing process can be simulated.

[0004] In the prior art, although three-dimensional process simulation can provide a lot of valuable information, its results are often different from the chip performance in actual production; this is because the simulation model is usually based on idealized assumptions and simplified physical models, while the actual situation may have more uncertainties and complexities; for example, chemical or physical models cannot fully capture complex manufacturing processes and physical phenomena, such as uneven temperature distribution, changes in chemical reaction rates, etc.; these factors are ignored or simplified in the simulation, resulting in deviations between the simulation results and the actual situation. Summary of the invention

[0005] The purpose of the present invention is to provide a three-dimensional chip process simulation method and system to solve the above technical problems.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A process simulation method for a three-dimensional chip comprises the following steps:

[0008] Step S1: Obtain the time period from the start of chip processing to the end of processing, which is recorded as a processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain physical parameters at each node to obtain real-time physical parameters, wherein the physical parameters include size and roughness; and obtain all environmental indicators in the processing cycle, wherein the environmental indicators include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data;

[0009] Step S2: Acquire all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node;

[0010] Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate;

[0011] Step S3: Before performing process simulation on the chip, obtain various environmental indicators of the process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data. Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data;

[0012] Step S4: When the chip is subjected to process simulation, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is acquired in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is acquired in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is acquired, and the value of the simulation environment index is acquired, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is acquired in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected.

[0013] As a further aspect of the present invention, the process of associating each physical parameter with an environmental indicator comprises:

[0014] Select any environmental indicator as the environmental indicator to be tested, and record the remaining environmental indicators as the remaining environmental indicators; among all the historical processing data, select several historical processing data in which the remaining environmental indicators are consistent and only the environmental indicator to be tested is consistent, and record them as verification data; obtain the physical parameters of the verification data at the end of processing, and compare the physical parameters between each verification data.

[0015] As a further solution of the present invention: the process of comparing the physical parameters between the verification data includes:

[0016] Randomly select one verification data from all the verification data as the standard verification data, and record the physical parameters of the standard verification data as the standard physical parameters P0 and mark the environmental index to be tested of the standard verification data as the standard environmental index Z 0 ; Obtain the difference between the environmental index Z to be tested and the standard environmental index of the verification data Cz=|ZZ 0 |, and obtain the parameter difference Cp=|PP between the physical parameter P of the verification data and the standard physical parameter 0 |; According to the parameter difference corresponding to each indicator difference, a data set is obtained, and the correlation coefficient between the indicator difference and the parameter difference in the data set is obtained, and the correlation coefficient is judged.

[0017] As a further solution of the present invention: the process of judging the correlation coefficient includes:

[0018] A correlation coefficient threshold is set, and the setting range of the correlation coefficient threshold is [0.8, 0.95]; the correlation coefficient r between the indicator difference and the parameter difference in the data set is obtained, if |r|∈[0.8, 0.95], the physical parameter is associated with the environmental indicator to be measured; if |r| does not belong to [0.8, 0.95], the physical parameter is not associated with the environmental indicator to be measured.

[0019] As a further solution of the present invention: the generation process of the processing change curve includes:

[0020] A rectangular coordinate system is established with the node number as the horizontal coordinate and the value of the physical parameter as the vertical coordinate; the physical parameters under each numbered node are converted into coordinate points of corresponding positions on the rectangular coordinate system, and each coordinate point is connected with a smooth curve, and the curve is recorded as a processing change curve.

[0021] As a further solution of the present invention: the process of obtaining the average rate of change includes:

[0022] According to all the coordinate points, a fitting straight line is obtained in the rectangular coordinate system based on the least square method, and the slope of the fitting straight line is obtained and recorded as the average change rate.

[0023] As a further solution of the present invention: the process of correcting the monitored physical parameter includes adjusting the monitored physical parameter to f(Z′).

[0024] As a further solution of the present invention: a process simulation system for a three-dimensional chip, comprising:

[0025] Processing data acquisition module: obtain the time period from the start of chip processing to the end of processing, which is recorded as the processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain the physical parameters at each node to obtain real-time physical parameters, which include size and roughness; and obtain all environmental indicators in the processing cycle, which include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data;

[0026] Processing data processing module: obtain all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node;

[0027] Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate;

[0028] Simulation data comparison module: before performing process simulation on the chip, obtain various environmental indicators of process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data;

[0029] Simulation correction module: When performing process simulation on the chip, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is obtained in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is obtained in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is obtained, and the value of the simulation environment index is obtained, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is obtained in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected.

[0030] Beneficial effects of the present invention:

[0031] The present invention can more accurately simulate the influence of environmental changes on physical parameters in the actual processing process by acquiring real-time physical parameters and environmental indicators within the chip processing cycle and associating them. This helps to improve the accuracy of three-dimensional chip process simulation and make the simulation results closer to the actual situation. By analyzing and comparing historical processing data, the processing conditions most similar to the current simulation environment can be found, thereby providing a basis for process optimization. This helps to reduce trial and error costs and improve production efficiency and product quality. During the chip process simulation process, the changes in physical parameters are monitored in real time, and the deviation values ​​from the expected changes are calculated. This helps to find problems in time and make adjustments to ensure the stability and controllability of the production process. By collecting and analyzing a large amount of historical processing data and simulation data, strong data support can be provided for production decisions. This helps enterprises better understand how various factors in the production process affect product quality, so as to make more informed decisions. In summary, the three-dimensional chip process simulation method of the present invention has the beneficial effects of improving simulation accuracy, optimizing production processes, real-time monitoring and adjustment, and data-driven decision support, which helps to improve the efficiency and quality of three-dimensional chip production. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The present invention will be further described below in conjunction with the accompanying drawings.

[0033] Figure 1 It is a schematic flow chart of a process simulation method for a three-dimensional chip according to the present invention. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] See also Figure 1 As shown, the present invention is a process simulation method for a three-dimensional chip, comprising the following steps:

[0036] Step S1: Obtain the time period from the start of chip processing to the end of processing, which is recorded as a processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain physical parameters at each node to obtain real-time physical parameters, wherein the physical parameters include size and roughness; and obtain all environmental indicators in the processing cycle, wherein the environmental indicators include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data;

[0037] It can be understood that the entire time period that the chip goes through from the beginning to the end of processing, that is, the processing cycle, is first determined, which is the basic time frame of the entire simulation; in order to capture the key changes in the processing process, a time interval threshold is set, and several nodes are selected within the processing cycle according to this threshold. These nodes represent important moments in the processing process; at each selected time node, the physical parameters of the chip, such as size and roughness, are measured and recorded. These parameters reflect the physical state of the chip at different processing stages; at the same time, environmental indicators such as temperature and chemical reaction rate are collected throughout the processing cycle. Environmental factors have an important impact on chip processing, so they need to be recorded in detail; the physical parameters at each time node are associated with the corresponding environmental indicators to form complete processing data. In this way, it is possible to analyze how environmental factors affect changes in physical parameters;

[0038] As a preferred embodiment of the present invention, the process of associating each physical parameter with an environmental indicator includes:

[0039] Select any environmental indicator as the environmental indicator to be tested, and record the remaining environmental indicators as the remaining environmental indicators; select several historical processing data in which the remaining environmental indicators are consistent and only the environmental indicator to be tested is consistent from all historical processing data, and record them as verification data; obtain the physical parameters of the verification data at the end of processing, and compare the physical parameters between the verification data;

[0040] The process of comparing the physical parameters between the verification data includes:

[0041] Randomly select one verification data from all the verification data as the standard verification data, and record the physical parameters of the standard verification data as the standard physical parameters P 0 and mark the environmental index to be tested of the standard verification data as the standard environmental index Z 0 ; Obtain the difference between the environmental index to be tested Z of the verification data and the standard environmental index Cz=|ZZ 0 |, and obtain the parameter difference Cp=|PP between the physical parameter P of the verification data and the standard physical parameter 0 |; According to the parameter difference corresponding to each indicator difference, a data set is obtained, and the correlation coefficient between the indicator difference and the parameter difference in the data set is obtained, and the correlation coefficient is judged;

[0042] The process of judging the correlation coefficient includes:

[0043] Setting a correlation coefficient threshold, wherein the setting range of the correlation coefficient threshold is [0.8, 0.95]; obtaining a correlation coefficient r between the indicator difference and the parameter difference in the data set, if |r|∈[0.8, 0.95], the physical parameter is associated with the environmental indicator to be measured; if |r| does not belong to [0.8, 0.95], the physical parameter is not associated with the environmental indicator to be measured;

[0044] It should be noted that commonly used correlation coefficients include the Pearson correlation coefficient; the Pearson correlation coefficient is mainly used to measure the linear correlation between two variables X and Y, and its value range is between -1 and 1; when r>0, it means that the two variables are positively correlated; when r<0, it means that the two variables are negatively correlated; when r=0, it means that there is no linear correlation between the two variables; when |r|>0.95, the two variables are significantly correlated, indicating that there is a very strong linear relationship between the two variables; when 0.8≤|r|<0.95, the two variables are highly correlated, indicating that there is a strong linear relationship between the two variables; when 0.5≤|r|<0.8, the two variables are moderately correlated, indicating that there is a certain linear relationship between the two variables; when 0.3≤|r|<0.5, the two variables are weakly correlated, indicating that the linear relationship between the two variables is weak; when |r|<0.3, the two variables are weakly correlated or not correlated, indicating that there is almost no linear relationship between the two variables; therefore, the setting range of the correlation coefficient threshold is [0.8, 0.95];

[0045] Step S2: Acquire all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node;

[0046] Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate;

[0047] It can be understood that numbering each node in the historical processing data and generating a processing change curve based on the physical parameters helps to visualize the changing trend of the physical parameters over time; obtaining the average change rate of the physical parameter processing change curve, which reflects the general trend of the physical parameter change; combining the environmental indicator values ​​associated with the physical parameters in the historical processing data and their corresponding average change rates to generate a parameter change curve, which helps to understand the changing laws of the physical parameters under different environmental conditions;

[0048] As a preferred embodiment of the present invention, the process of generating the processing change curve includes:

[0049] A rectangular coordinate system is established with the node number as the horizontal coordinate and the value of the physical parameter as the vertical coordinate; the physical parameters under each numbered node are converted into coordinate points of corresponding positions on the rectangular coordinate system, each coordinate point is connected with a smooth curve, and the curve is recorded as a processing change curve;

[0050] The process of obtaining the average rate of change includes:

[0051] According to all the coordinate points, a fitting straight line is obtained in the rectangular coordinate system based on the least square method, and the slope of the fitting straight line is obtained and recorded as the average change rate;

[0052] It can be understood that, according to all the coordinate points, a fitting straight line is obtained in the rectangular coordinate system based on the least square method; the least square method is a mathematical optimization technique, which finds the best function match for the data by minimizing the sum of squares of errors, and it is used to find the straight line that best represents all data points; the slope of the above fitting straight line is obtained, which is recorded as the average rate of change; the slope represents the degree of inclination of the straight line, that is, the rate of change of the physical parameter, which represents the average level of the physical parameter changing with the node number;

[0053] Step S3: Before performing process simulation on the chip, obtain various environmental indicators of the process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data. Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data;

[0054] It can be understood that, according to the similarity calculation results, a set of historical processing data that is most similar to the simulation environment is selected as the class processing data, which helps to improve the accuracy of the simulation;

[0055] Step S4: When the chip is subjected to process simulation, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is obtained in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is obtained in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is obtained, and the value of the simulation environment index is obtained, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is obtained in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected;

[0056] It can be understood that f(Z′) is the expected rate of change calculated based on the simulation environment index, which helps to timely discover the deviation between the simulation and the actual situation; the difference value reflects the deviation between the actual rate of change and the expected rate of change; if the difference value exceeds the preset difference threshold, it indicates that there is a significant deviation between the simulation result and the actual situation, and adjustment is required;

[0057] As a preferred embodiment of the present invention, the process of correcting the monitored physical parameter includes adjusting the monitored physical parameter to f(Z′);

[0058] It can be understood that the expected value is calculated based on the simulation environment indicators. This step is to make the simulation results closer to the actual situation and improve the accuracy of the simulation.

[0059] A process simulation system for a three-dimensional chip, comprising:

[0060] Processing data acquisition module: obtain the time period from the start of chip processing to the end of processing, which is recorded as the processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain the physical parameters at each node to obtain real-time physical parameters, which include size and roughness; and obtain all environmental indicators in the processing cycle, which include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data;

[0061] Processing data processing module: obtain all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node;

[0062] Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate;

[0063] Simulation data comparison module: before performing process simulation on the chip, obtain various environmental indicators of process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data;

[0064] Simulation correction module: When performing process simulation on the chip, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is obtained in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is obtained in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is obtained, and the value of the simulation environment index is obtained, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is obtained in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected.

[0065] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A process simulation method for a three-dimensional chip, characterized in that: The following steps are involved: Step S1: Obtain the time period from the start of chip processing to the end of processing, which is recorded as a processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain physical parameters at each node to obtain real-time physical parameters, wherein the physical parameters include size and roughness; and obtain all environmental indicators in the processing cycle, wherein the environmental indicators include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data; Step S2: Acquire all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node; Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate; Step S3: Before performing process simulation on the chip, obtain various environmental indicators of the process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data. Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data; Step S4: When the chip is subjected to process simulation, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is acquired in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is acquired in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is acquired, and the value of the simulation environment index is acquired, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is acquired in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected.

2. A three-dimensional chip process simulation method according to claim 1, characterized in that: In step S1, the process of associating each physical parameter with an environmental indicator includes: Select any environmental indicator as the environmental indicator to be tested, and record the remaining environmental indicators as the remaining environmental indicators; among all the historical processing data, select several historical processing data in which the remaining environmental indicators are consistent and only the environmental indicator to be tested is consistent, and record them as verification data; obtain the physical parameters of the verification data at the end of processing, and compare the physical parameters between each verification data.

3. A three-dimensional chip process simulation method according to claim 2, characterized in that: In step S1, the process of comparing the physical parameters between the verification data includes: Randomly select one verification data from all the verification data as the standard verification data, record the physical parameter of the standard verification data as the standard physical parameter P0, and mark the test environment index of the standard verification data as the standard environment index Z0; obtain the index difference Cz=|Z-Z0| between the test environment index Z of the verification data and the standard environment index, and obtain the parameter difference Cp=|P-P0| between the physical parameter P of the verification data and the standard physical parameter; obtain a data set according to the parameter difference corresponding to each index difference, and obtain the correlation coefficient between the index difference and the parameter difference in the data set, and judge the correlation coefficient.

4. The process simulation method for a three-dimensional chip according to claim 3, characterized in that: In step S1, the process of determining the correlation coefficient includes: A correlation coefficient threshold is set, and the setting range of the correlation coefficient threshold is [0.8, 0.95]; the correlation coefficient r between the indicator difference and the parameter difference in the data set is obtained, if |r|∈[0.8, 0.95], the physical parameter is associated with the environmental indicator to be measured; if |r| does not belong to [0.8, 0.95], the physical parameter is not associated with the environmental indicator to be measured.

5. The process simulation method for a three-dimensional chip according to claim 1, characterized in that: In step S2, the process of generating the processing change curve includes: A rectangular coordinate system is established with the node number as the horizontal coordinate and the value of the physical parameter as the vertical coordinate; the physical parameters under each numbered node are converted into coordinate points of corresponding positions on the rectangular coordinate system, and each coordinate point is connected with a smooth curve, and the curve is recorded as a processing change curve.

6. A three-dimensional chip process simulation method according to claim 5, characterized in that: In step S2, the process of obtaining the average rate of change includes: According to all the coordinate points, a fitting straight line is obtained in the rectangular coordinate system based on the least square method, and the slope of the fitting straight line is obtained and recorded as the average change rate.

7. The process simulation method for a three-dimensional chip according to claim 1, characterized in that: In step S4, the process of correcting the monitored physical parameter includes adjusting the monitored physical parameter to f(Z′).

8. A three-dimensional chip process simulation system, characterized in that: include: Processing data acquisition module: obtain the time period from the start of chip processing to the end of processing, which is recorded as the processing cycle; set a time interval threshold, and select several nodes in the processing cycle according to the time interval threshold; obtain the physical parameters at each node to obtain real-time physical parameters, which include size and roughness; and obtain all environmental indicators in the processing cycle, which include temperature and chemical reaction rate; associate each physical parameter with an environmental indicator, and mark all real-time physical parameters and all environmental indicators in the processing cycle as processing data; Processing data processing module: obtain all historical processing data, number each node in the historical processing data, and generate a processing change curve of the physical parameters according to the physical parameters at each node; Obtaining an average change rate of the processing change curve of the physical parameter, and obtaining values ​​of environmental indicators associated with the physical parameter in historical processing data, and generating a parameter change curve according to the values ​​of each environmental indicator and its corresponding average change rate; Simulation data comparison module: before performing process simulation on the chip, obtain various environmental indicators of process simulation, all of which are recorded as simulation environmental indicators; compare all simulation environmental indicators with the environmental indicators in the historical processing data to obtain the similarity with the environmental indicators of each historical processing data Where n is the total number of environmental indicators, Z i represents the i-th environmental index, Z i ′ represents the i-th simulation environment index, i∈[1,n]; the environment index of the historical processing data with the highest similarity is selected, and the historical processing data is recorded as the class processing data; Simulation correction module: When performing process simulation on the chip, the physical parameter being monitored is recorded as the monitored physical parameter; the monitored physical parameter is obtained in real time to obtain a processing change curve, which is recorded as the current processing change curve; and the average change rate of the current processing change curve is obtained in real time, which is recorded as the current change rate R; the simulation environment index associated with the physical parameter monitored in real time is obtained, and the value of the simulation environment index is obtained, which is recorded as Z′; the difference value Dv=|Rf(Z′)| is obtained in real time, where f(Z′) is the expression of the parameter change curve when the value of the environmental index is Z′; if the difference value exceeds the preset difference threshold, the monitored physical parameter is corrected.

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