High-isolation common-aperture phased-array antenna with stacked transceiving units

Abstract

The invention provides a high-isolation common-caliber phased-array antenna with stacked transceiving units, which comprises a plurality of phased-array units, and is characterized in that each phased-array unit comprises a second metal patch, a third dielectric substrate, a low-frequency receiving antenna unit metal patch, a fourth metal column and a metal floor which form an isolation cavity; the phased array unit also comprises a first metal patch, a second metal patch, a fifth metal column and a metal floor which form a filtering structure; the invention has the following beneficial effects: the ratio of the high-frequency center frequency to the low-frequency center frequency is about 1.2, the frequencies are very close, the design of the isolation cavity and the filtering structure is innovatively adopted, and under the action of the isolation cavity and the filtering structure, the isolation degree is relatively high in a working frequency band, and the frequency is relatively high; and the high-frequency unit and the low-frequency unit keep good radiation performance in respective frequency band ranges, the radiation performance of the phased array after array forming is basically kept unchanged, and the high-frequency phased array and the low-frequency phased array can scan + / -45 degrees on an E plane and an H plane.

Description

Technical Field

[0001] The present invention relates to the technical field of common-aperture antennas, and in particular to a high-isolation common-aperture phased array antenna with a stacked transceiver unit design. Background Art

[0002] Phased array refers to an antenna that changes the shape of the antenna pattern by controlling the feeding phase of the antenna unit in the array antenna. By controlling the phase, the maximum direction of the antenna pattern is changed to achieve the purpose of beam scanning. It is widely used because of its advantages such as fast beam scanning speed and high tracking accuracy.

[0003] The user terminal of mainstream satellite communication systems such as Starlink is a phased array panel, which integrates the receiving phased array and the transmitting phased array. At present, the domestic satellite communication phased array is a receiving phased array and a transmitting phased array placed separately in parallel, and finally spliced ​​into an integral phased array panel. The power is high during satellite communication, and the parallel placement can make the receiving and transmitting phased arrays have a high degree of isolation, which does not affect the communication quality. However, the parallel placement of the receiving and transmitting phased arrays and then splicing them into a phased array panel will make the phased array area very large, which is not convenient for users to use and install. The user terminal phased array is the entrance to the satellite network and will become more and more popular in the future. At present, there is a trend of miniaturization and portability. Therefore, the receiving and transmitting antennas are stacked together, which can reduce the area by nearly half. This antenna form that allows multiple antennas with different frequency bands and polarizations to work simultaneously in the same aperture plane is called a "co-aperture antenna". Co-aperture antennas are increasingly used in satellite communication phased arrays.

[0004] The user-side transmission frequency of Starlink mainly adopts the Ku band. The operating frequency of the user terminal receiving phased array is 10.7-12.7GHz, with a total available bandwidth of 2GHz; the operating frequency of the user terminal transmitting phased array is 14.0-14.5GHz, with a total available bandwidth of 500MHz; the chip similar to it in China is produced by Tianrui Xingtong, model is the Ku-band four-channel phased array transceiver chip TRHJ-2060, the chip receiving frequency range: 10.7GHz-12.7GHz, the transmitting frequency range: 13.7GHz-14.5GHz. The transceiver chip is highly compatible with the co-aperture transceiver phased array, so the antenna designed by the present invention is consistent with the frequency of this chip, and the phased array of the present invention can be well integrated with the chip of this frequency band.

[0005] For antennas operating in two frequency bands, the ratio of the center frequencies of the high frequency and the low frequency is called the frequency ratio. The frequency ratio of the co-aperture phased array of the present invention is about 1.2, and the transmitting and receiving frequencies are very close. At the same time, the transmitting and receiving antennas are stacked, which can easily cause low isolation between the transmitting and receiving units. Because the power is high during satellite communication, if the isolation is low, it will cause signal interference and performance degradation, signals interfere with each other, increase the bit error rate, and even cause communication interruption. Currently, there are very few articles and patents that can achieve a low frequency ratio of a co-aperture phased array, and while the transceiver units are stacked, they can also maintain high isolation between the units of the two frequency bands. How to achieve high isolation under such harsh conditions will be very challenging. Summary of the invention

[0006] In view of the shortcomings of the prior art described above, an object of the present invention is to provide a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, which is used to solve the problem in the prior art that in order to reduce the area of ​​the phased array panel, the receiving and transmitting antennas are stacked together, which easily causes low isolation between the transceiver units.

[0007] In order to achieve the above-mentioned purpose and other related purposes, the present invention provides the following technical solutions:

[0008] A high-isolation co-aperture phased array antenna with a stacked transceiver unit design, comprising a plurality of phased array units, wherein the phased array unit comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate and a fifth dielectric substrate stacked in sequence from top to bottom;

[0009] Among them, a high-frequency transmitting antenna unit metal patch is provided on the top side of the first dielectric substrate, a first metal patch in the shape of a square frame for filtering and a second metal patch in the shape of a circular ring located inside the first metal patch and serving as the top structure of the isolation cavity are provided on the top side of the third dielectric substrate, a low-frequency receiving antenna unit metal patch serving as the bottom structure of the isolation cavity is provided on the top side of the fourth dielectric substrate, a metal floor, a plurality of fourth metal pillars and a plurality of fifth metal pillars for improving the isolation between phased array units are provided on the fifth dielectric substrate, the top end of the fourth metal pillar passes through the fourth dielectric substrate and the third dielectric substrate to be connected to the second metal patch, and the top end of the fifth metal pillar passes through the fourth dielectric substrate and the third dielectric substrate to be connected to the first metal patch.

[0010] In one embodiment of the present invention, the low-frequency receiving antenna unit metal patch and the high-frequency transmitting antenna unit metal patch constitute the basic form of the phased array unit; the second metal patch, the third dielectric substrate, the low-frequency receiving antenna unit metal patch, the fourth metal column and the metal floor together constitute an isolation cavity, and the first metal patch, the second metal patch, the fifth metal column and the metal floor together constitute a filtering structure.

[0011] In one embodiment of the present invention, a first microstrip line metal patch and a first metal column are provided on the top side of the second dielectric substrate, the bottom end of the first metal column is connected to the first microstrip line metal patch, and the top end of the first metal column passes through the first dielectric substrate and is connected to the high-frequency transmitting antenna unit metal patch.

[0012] In one embodiment of the present invention, a third metal patch is provided at the center of the top side of the third dielectric substrate. The third metal patch is located inside the second metal patch and is in a circular shape and is used to improve the machining accuracy of the metal through hole.

[0013] In one embodiment of the present invention, a fourth metal patch in a circular shape and a fifth metal patch in a square shape for improving the processing accuracy of metal through holes are provided on the bottom side of the fifth dielectric substrate, the bottom end of the fourth metal column passes through the metal floor and the fifth dielectric substrate to be connected to the fourth metal patch, and the bottom end of the fifth metal column passes through the metal floor and the fifth dielectric substrate to be connected to the fifth metal patch.

[0014] In one embodiment of the present invention, a second metal column serving as a low-frequency receiving antenna unit patch feeding structure and a third metal column serving as a high-frequency transmitting antenna unit patch feeding structure are further provided on the fifth dielectric substrate, the top end of the second metal column passes through the fourth dielectric substrate, the third dielectric substrate and the second dielectric substrate to be connected to the first microstrip line metal patch, and the top end of the third metal column passes through the fourth dielectric substrate to be connected to the low-frequency receiving antenna unit metal patch.

[0015] In one embodiment of the present invention, two coaxial to microstrip line feeding adapters are further provided on the bottom side of the fifth dielectric substrate, one of the adapters is provided with a second microstrip line metal patch located on the bottom side of the fifth dielectric substrate and used to feed the high-frequency transmitting antenna unit, and the other adapter is provided with a third microstrip line metal patch located on the bottom side of the fifth dielectric substrate and used to feed the low-frequency receiving antenna unit, the second metal column passes through the metal floor and the fifth dielectric substrate to be connected to the second microstrip line metal patch, and the third metal column passes through the metal floor and the fifth dielectric substrate to be connected to the third microstrip line metal patch.

[0016] As described above, a high-isolation co-aperture phased array antenna with a stacked transceiver unit design of the present invention has the following beneficial effects: the present invention adopts a stacked design for the transceiver antenna, and the ratio of the high-frequency to low-frequency center frequencies is about 1.2, the frequencies are very close, the high-frequency and low-frequency units operate in the Ku band, and innovatively adopts the design of an isolation cavity and a filtering structure. Under the action of the isolation cavity and the filtering structure, not only is there a high degree of isolation within the operating frequency band, but the high-frequency and low-frequency units also maintain good radiation performance within their respective frequency bands, and the radiation performance of the phased array remains basically unchanged after the array is formed, and the high-frequency and low-frequency phased arrays can scan to ±45° on the E and H planes; at the same time, the number of high-frequency and low-frequency phased array units of the present invention is consistent, and the frequency is also consistent with that of existing chips, and can be easily integrated with existing chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a top view of a 5×5 phased array antenna composed of 25 phased array units disclosed in an embodiment of the present invention;

[0018] Figure 2 is a front plan view of a phased array unit disclosed in an embodiment of the present invention;

[0019] Figure 3 It is a front bottom stereogram of a phased array unit disclosed in an embodiment of the present invention;

[0020] Figure 4 It is a front plan perspective view of a first dielectric substrate disclosed in an embodiment of the present invention;

[0021] Figure 5 is a front plan view of a second dielectric substrate disclosed in an embodiment of the present invention;

[0022] Figure 6 is a front plan view of a third dielectric substrate disclosed in an embodiment of the present invention;

[0023] Figure 7 is a front plan view of a fourth dielectric substrate disclosed in an embodiment of the present invention;

[0024] Figure 8 is a front plan perspective view of a fifth dielectric substrate disclosed in an embodiment of the present invention;

[0025] Fig. 9 It is a top view of a fifth dielectric substrate bottom feeding structure disclosed in an embodiment of the present invention;

[0026] Fig.10 is an S parameter curve diagram of the phased array high frequency and low frequency units disclosed in the embodiment of the present invention;

[0027] Fig.11It is a schematic diagram of the E-plane scanning direction when 25 low-frequency units of the phased array disclosed in an embodiment of the present invention work at 10.7 GHz;

[0028] Fig.12 It is a schematic diagram of the H-plane scanning direction when 25 low-frequency units of the phased array disclosed in an embodiment of the present invention work at 10.7 GHz;

[0029] Fig.13 It is a schematic diagram of the E-plane scanning direction when 25 low-frequency units of the phased array disclosed in an embodiment of the present invention work at 12.7 GHz;

[0030] Fig.14 It is a schematic diagram of the H-plane scanning direction when 25 low-frequency units of the phased array disclosed in an embodiment of the present invention work at 12.7 GHz;

[0031] Fig.15 It is a schematic diagram of the H-plane scanning direction when 25 high-frequency units of the phased array disclosed in an embodiment of the present invention work at 13.7 GHz;

[0032] Fig.16 It is a schematic diagram of the E-plane scanning direction when 25 high-frequency units of the phased array disclosed in an embodiment of the present invention work at 13.7 GHz;

[0033] Fig.17 It is a schematic diagram of the H-plane scanning direction when 25 high-frequency units of the phased array disclosed in an embodiment of the present invention work at 14.5 GHz;

[0034] Fig.18 It is a schematic diagram of the E-plane scanning direction when 25 high-frequency units of the phased array disclosed in an embodiment of the present invention operate at 14.5 GHz.

[0035] Component number description

[0036] 1. Phased array antenna; 2. Phased array unit; 21. First dielectric substrate; 211. High frequency transmitting antenna unit metal patch; 22. Second dielectric substrate; 221. First microstrip line metal patch; 222. First metal column; 23. Third dielectric substrate; 231. First metal patch; 232. Second metal patch; 233. Third metal patch; 24. Fourth dielectric substrate; 241. Low frequency receiving antenna unit metal patch; 25. Fifth dielectric substrate; 251. Metal floor; 252. Second metal column; 253. Third metal column; 254. Fourth metal column; 255. Fifth metal column; 256. Second microstrip line metal patch; 257. Third microstrip line metal patch; 258. Fourth metal patch; 259. Fifth metal patch; 26. Adapter. DETAILED DESCRIPTION

[0037] The following specific embodiments illustrate the implementation of the present invention, and those familiar with the technology can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0038] See also Figures 1 to 9 The present invention provides a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, including a plurality of phased array units 2. In this embodiment, the phased array antenna 1 includes 25 phased array units 2, and the 25 co-aperture phased array units 2 constitute a 5×5 phased array antenna 1, which includes 25 low-frequency antenna units and 25 high-frequency antenna units. Figure 1 As shown, the phased array unit 2 includes a first dielectric substrate 21, a second dielectric substrate 22, a third dielectric substrate 23, a fourth dielectric substrate 24 and a fifth dielectric substrate 25 which are stacked in sequence from top to bottom.

[0039] like Figure 4 As shown, a high-frequency transmitting antenna unit metal patch 211 is provided on the top side of the first dielectric substrate 21 .

[0040] like Figure 5 As shown, a first microstrip line metal patch 221 and a first metal column 222 are provided on the top side of the second dielectric substrate 22, the bottom end of the first metal column 222 is connected to the first microstrip line metal patch 221, and the top end of the first metal column 222 passes through the first dielectric substrate 21 and is connected to the high-frequency transmitting antenna unit metal patch 211.

[0041] like Figure 6 As shown, the top side of the third dielectric substrate 23 is provided with a first metal patch 231 for filtering and in a square shape, and a second metal patch 232 located in the first metal patch 231 and in a circular shape and serving as the top structure of the isolation cavity, and a third metal patch 233 located in the second metal patch 232 and in a circular shape and used to improve the processing accuracy of the metal through hole is provided at the center position of the top side of the third dielectric substrate 23.

[0042] like Figure 7 As shown, a low-frequency receiving antenna unit metal patch 241 serving as the bottom structure of the isolation cavity is disposed on the top side of the fourth dielectric substrate 24 .

[0043] like Figure 8 and Fig. 9As shown, the fifth dielectric substrate 25 is provided with a metal floor 251, a second metal column 252 as a patch feeding structure of a low-frequency receiving antenna unit, a third metal column 253 as a patch feeding structure of a high-frequency transmitting antenna unit, a plurality of fourth metal columns 254 and a plurality of fifth metal columns 255 for improving the isolation between the phased array units 2; the bottom side of the fifth dielectric substrate 25 is also provided with two coaxial to microstrip line feeding SSMP adapters 26, one of which is provided with a second microstrip line metal patch 256 located on the bottom side of the fifth dielectric substrate 25 and used to feed the high-frequency transmitting antenna unit, and the other SSMP adapter 26 is provided with a third microstrip line metal patch 257 located on the bottom side of the fifth dielectric substrate 25 and used to feed the low-frequency receiving antenna unit, and the bottom side of the fifth dielectric substrate 25 is also provided with a fourth metal patch 258 in a circular shape for improving the processing accuracy of the metal through hole and a fifth metal patch 259 in a square shape;

[0044] The top of the second metal column 252 passes through the fourth dielectric substrate 24, the third dielectric substrate 23 and the second dielectric substrate 22 to connect with the first microstrip line metal patch 221, and the bottom of the second metal column 252 passes through the metal floor 251 and the fifth dielectric substrate 25 to connect with the second microstrip line metal patch 256; the top of the third metal column 253 passes through the fourth dielectric substrate 24 to connect with the low-frequency receiving antenna unit metal patch 241, and the bottom of the third metal column 253 passes through the metal floor 251 and the fifth dielectric substrate 25 to connect with the third microstrip line metal patch 256. The top end of the fourth metal pillar 254 passes through the fourth dielectric substrate 24 and the third dielectric substrate 23 to be connected to the second metal patch 232, and the bottom end of the fourth metal pillar 254 passes through the metal floor 251 and the fifth dielectric substrate 25 to be connected to the fourth metal patch 258; the top end of the fifth metal pillar 255 passes through the fourth dielectric substrate 24 and the third dielectric substrate 23 to be connected to the first metal patch 231, and the bottom end of the fifth metal pillar 255 passes through the metal floor 251 and the fifth dielectric substrate 25 to be connected to the fifth metal patch 259.

[0045] Specifically, a plurality of phased array units 2 together constitute a large array, that is, the high-isolation co-aperture phased array antenna 1 of the present invention. The design method of the high-isolation co-aperture phased array antenna 1 of the present invention with a low-frequency ratio transceiver unit stacking design based on an isolation cavity and a filtering structure comprises the following steps: a first step: designing a phased array unit 2 of a co-aperture phased array antenna with stacked low-frequency and high-frequency antenna units, the low-frequency phased array unit operating at 10.7 GHz-12.7 GHz, and the high-frequency phased array unit operating at 13.7 GHz-14.5 GHz; a second step: adjusting the position, diameter, length of the metal column in the phased array unit 2 and the position and shape of the metal patch so that the isolation between the low-frequency and high-frequency antenna units is greater than 25 dB; a third step: forming a large array with a plurality of phased array units 2 together, wherein the array composed of the phased array units 2 realizes E-plane ±45° scanning and H-plane ±45° scanning in both the low-frequency and high-frequency working frequency bands.

[0046] More specifically, the low-frequency receiving antenna unit metal patch 241 and the high-frequency transmitting antenna unit metal patch 211 constitute the basic form of the phased array unit 2; the present invention uses the isolation cavity technology to make the common-aperture phased array unit 2 have a good isolation in the low-frequency band, and uses the filtering technology to make the common-aperture phased array unit 2 have a good isolation in the high-frequency band; in order to improve the isolation in the low-frequency band, the isolation cavity proposed by the present invention is composed of: the second metal patch 232, the third dielectric substrate 23, the low-frequency receiving antenna unit metal patch 241, the fourth metal column 254 and the metal floor 251 The second metal patch 232 at the top of the isolation cavity is connected to the metal floor 251 through the fourth metal column 254. The second metal patch 232 and the low-frequency receiving antenna unit metal patch 241 together constitute an electromagnetic resonant cavity similar to a dielectric filled in the middle, which can present a high-order resonance phenomenon. The dielectric resonant cavity is limited by the upper and lower conductors of the metal patch and the magnetic wall around the patch (simulating an open circuit). When resonating, the input impedance is large and no power is radiated. The part below the second metal patch 232 can be regarded as a cylindrical cavity filled with a dielectric constant of , and the uniform wave equation is used to solve it:

[0047]

[0048] The resonant frequency f of the resonant cavity can be solved rc

[0049]

[0050] Where a is the reflector radius, h is the height difference between the second metal patch 232 and the low-frequency receiving antenna unit metal patch 241, ∈ ris the dielectric constant of the third dielectric plate, v0 is the propagation speed of electromagnetic waves in a vacuum; the resonant frequency calculated according to the formula can be used as a reference. Theoretically, when the isolation cavity is in resonance, the input impedance is large and no power is radiated. That is to say, when the top high-frequency antenna unit is connected to a matching load and the bottom low-frequency antenna is connected to a high-frequency feed source, there is a standing wave in the isolator, but the electromagnetic signal will not pass through the isolator toward the top high-frequency antenna unit. It can be seen that due to the existence of the isolation cavity, the isolation of the co-aperture phased array unit in the low-frequency band is very good;

[0051] In order to improve the isolation of the low frequency band, the filtering structure proposed in the present invention is composed of: a first metal patch 231, a second metal patch 232, a fifth metal column 255 and a metal floor 251. That is to say, when the bottom low frequency antenna is connected to a matching load and the top high frequency antenna unit is connected to a low frequency feed source, the filtering structure will not allow the electromagnetic signal to be directed toward the bottom low frequency antenna unit. Due to the existence of the filtering structure, the isolation of the co-aperture phased array unit 2 in the high frequency band is very good; please refer to the isolation effect. Fig.10 , Fig.10 The S parameter curve of the phased array high-frequency and low-frequency units. S11 is the return loss of the low-frequency unit, and S22 is the return loss of the high-frequency unit. It can be seen that the return loss of the low-frequency and high-frequency units is very low within their own working frequency bands. S12 represents the isolation between the high-frequency and low-frequency units. The lower the S12 value, the better the isolation between the high-frequency and low-frequency units. Fig.10 It can be seen that the S12 curve has two obvious depressions in the high-frequency and low-frequency working bands of the phased array. This is because the existence of the isolation cavity makes the isolation of the common-aperture phased array unit 2 very good in the low-frequency band; due to the existence of the filtering structure, the isolation of the common-aperture phased array unit 2 is very good in the high-frequency band.

[0052] Furthermore, the traditional common-aperture phased array cannot work in the Ku band at the same time, with a frequency ratio as low as 1.2, the same number of high-frequency and low-frequency units, and high isolation between the high-frequency and low-frequency units. The present invention finally achieves the low-frequency unit of the common-aperture phased array working at 10.7-12.7GHz and the high-frequency unit working at 13.7-14.5GHz. While ensuring good radiation performance, the isolation between the high-frequency and low-frequency units is higher than 25dB, and the high-frequency and low-frequency phased arrays can scan to ±45° on the E and H planes. For details, please refer to Figures 11 to 18 , Figures 11 to 14 It is the E-plane and H-plane scanning pattern of the 25 low-frequency units of the phased array working at 10.7-12.7GHz. The low-frequency units of the phased array are within the working frequency band, and the E-plane and H-plane can scan up to 45°. Figures 15 to 18It is the E-plane and H-plane scanning radiation pattern of 25 high-frequency units of the phased array working at 13.7-14.5GHz. Within the working frequency band, the high-frequency units of the phased array can scan up to 45° on the E-plane and H-plane.

[0053] In summary, the present invention adopts a stacked design for the transceiver antenna, and the ratio of the high-frequency to low-frequency center frequencies is about 1.2, the frequencies are very close, the high-frequency and low-frequency units work in the Ku band, and innovatively adopts the design of the isolation cavity and the filtering structure. Under the action of the isolation cavity and the filtering structure, not only is there a high degree of isolation within the working frequency band, but the high-frequency and low-frequency units also maintain good radiation performance within their respective frequency bands, and the radiation performance of the phased array remains basically unchanged after the array is formed, and the high-frequency and low-frequency phased arrays can scan to ±45° on the E plane and the H plane; at the same time, the number of high-frequency and low-frequency phased array units of the present invention is consistent, and the frequency is also consistent with the existing chip, and can be easily integrated with the existing chip.

[0054] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. All equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A high-isolation co-aperture phased array antenna with a stacked transceiver unit design, characterized in that: Comprising a plurality of phased array units (2), the phased array unit (2) comprising a first dielectric substrate (21), a second dielectric substrate (22), a third dielectric substrate (23), a fourth dielectric substrate (24) and a fifth dielectric substrate (25) which are stacked in sequence from top to bottom; The top side of the first dielectric substrate (21) is provided with a high-frequency transmitting antenna unit metal patch (211), the top side of the third dielectric substrate (23) is provided with a first metal patch (231) for filtering and in a square shape, and a second metal patch (232) located inside the first metal patch (231) and in a circular ring shape and serving as the top structure of the isolation cavity, the top side of the fourth dielectric substrate (24) is provided with a low-frequency receiving antenna unit metal patch (241) serving as the bottom structure of the isolation cavity, and the top side of the fifth dielectric substrate (23) is provided with a first metal patch (231) for filtering and in a square shape, and a second metal patch (232) located inside the first metal patch (231) and in a circular ring shape and serving as the top structure of the isolation cavity. A metal floor (251), a plurality of fourth metal pillars (254) and a plurality of fifth metal pillars (255) for improving the isolation between phased array units (2) are provided on the dielectric substrate (25); the top end of the fourth metal pillar (254) passes through the fourth dielectric substrate (24) and the third dielectric substrate (23) to be connected to the second metal patch (232); the top end of the fifth metal pillar (255) passes through the fourth dielectric substrate (24) and the third dielectric substrate (23) to be connected to the first metal patch (231).

2. According to claim 1, a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, characterized in that: The low-frequency receiving antenna unit metal patch (241) and the high-frequency transmitting antenna unit metal patch (211) constitute the basic form of the phased array unit (2); the second metal patch (232), the third dielectric substrate (23), the low-frequency receiving antenna unit metal patch (241), the fourth metal column (254) and the metal floor (251) together constitute an isolation cavity; the first metal patch (231), the second metal patch (232), the fifth metal column (255) and the metal floor (251) together constitute a filtering structure.

3. According to claim 1, a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, characterized in that: A first microstrip line metal patch (221) and a first metal column (222) are provided on the top side of the second dielectric substrate (22); the bottom end of the first metal column (222) is connected to the first microstrip line metal patch (221); and the top end of the first metal column (222) passes through the first dielectric substrate (21) and is connected to the high-frequency transmitting antenna unit metal patch (211).

4. The high-isolation co-aperture phased array antenna with a stacked transceiver unit design according to claim 1, characterized in that: A third metal patch (233) is provided at the center of the top side of the third dielectric substrate (23), which is located inside the second metal patch (232) and is in a circular ring shape and is used to improve the machining accuracy of the metal through hole.

5. The high-isolation co-aperture phased array antenna with a stacked transceiver unit design according to claim 1, characterized in that: A fourth metal patch (258) in a circular shape and used to improve the processing accuracy of the metal through-hole and a fifth metal patch (259) in a square frame shape are provided on the bottom side of the fifth dielectric substrate (25); the bottom end of the fourth metal column (254) passes through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the fourth metal patch (258); the bottom end of the fifth metal column (255) passes through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the fifth metal patch (259).

6. The high-isolation co-aperture phased array antenna with a stacked transceiver unit design according to claim 1, characterized in that: The fifth dielectric substrate (25) is also provided with a second metal column (252) serving as a low-frequency receiving antenna unit patch feeding structure and a third metal column (253) serving as a high-frequency transmitting antenna unit patch feeding structure; the top end of the second metal column (252) passes through the fourth dielectric substrate (24), the third dielectric substrate (23) and the second dielectric substrate (22) to be connected to the first microstrip line metal patch (221); the top end of the third metal column (253) passes through the fourth dielectric substrate (24) to be connected to the low-frequency receiving antenna unit metal patch (241).

7. The high-isolation co-aperture phased array antenna with a stacked transceiver unit design according to claim 6, characterized in that: The bottom side of the fifth dielectric substrate (25) is also provided with two coaxial-to-microstrip line feeding adapters (26), one of the adapters (26) being provided with a second microstrip line metal patch (256) located on the bottom side of the fifth dielectric substrate (25) and used for feeding the high-frequency transmitting antenna unit, and the other adapter (26) being provided with a third microstrip line metal patch (257) located on the bottom side of the fifth dielectric substrate (25) and used for feeding the low-frequency receiving antenna unit, the bottom end of the second metal column (252) passing through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the second microstrip line metal patch (256), and the bottom end of the third metal column (253) passing through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the third microstrip line metal patch (257).

Images