A high-isolation co-aperture phased array antenna with a stacked transceiver unit design

Abstract

The present invention provides a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, comprising a plurality of phased array units, wherein the phased array units include a second metal patch, a third dielectric substrate, a low-frequency receiving antenna unit metal patch, a fourth metal column, and a metal floor forming an isolation cavity. The phased array units also include a first metal patch, a second metal patch, a fifth metal column, and a metal floor forming a filtering structure. The present invention has the following beneficial effects: the ratio of the high-frequency and low-frequency center frequencies of the present invention is approximately 1.2, and the frequencies are very close. The design of the isolation cavity and filtering structure is innovatively adopted. Under the action of the isolation cavity and filtering structure, not only is high isolation achieved within the operating frequency band, but the high-frequency and low-frequency units also maintain good radiation performance within their respective frequency bands. Moreover, the radiation performance of the phased array remains substantially unchanged after the array is formed, and the high-frequency and low-frequency phased arrays can scan to ±45° on the E plane and H plane.

Description

Technical Field

[0001] The present invention relates to the technical field of co-aperture antennas, and in particular to a high-isolation co-aperture phased array antenna with a stacked transceiver unit design. Background Art

[0002] Phased array antennas are designed to change the antenna pattern by controlling the feed phase of the antenna elements in the array. This control changes the maximum directionality of the antenna pattern, thereby achieving beam scanning. They are widely used due to their fast beam scanning speed and high tracking accuracy.

[0003] The user terminals of mainstream satellite communication systems such as Starlink are phased array panels, which integrate the receiving phased array and the transmitting phased array. Currently, domestic satellite communication phased arrays are composed of receiving phased arrays and transmitting phased arrays placed separately in parallel and finally spliced ​​into an integral phased array panel. Satellite communication has high power, and placing them separately in parallel can achieve high isolation between the receiving and transmitting phased arrays, without affecting communication quality. However, placing the transmitting and receiving phased arrays in parallel and then splicing them into a phased array panel will make the phased array area very large, which is inconvenient for users to use and install. User terminal phased arrays are the entrance to the satellite network and will become more and more popular in the future. There is a growing trend towards miniaturization and portability. Therefore, stacking the receiving and transmitting antennas together can reduce the area by nearly half. This antenna form that allows multiple antennas with different frequency bands and polarizations to operate simultaneously in the same aperture plane is called a "co-aperture antenna". Co-aperture antennas are increasingly used in satellite communication phased arrays.

[0004] Starlink's user-side transmission frequency primarily uses the Ku band. The user terminal's receiving phased array operates at a frequency of 10.7-12.7 GHz, with a total available bandwidth of 2 GHz. The user terminal's transmitting phased array operates at a frequency of 14.0-14.5 GHz, with a total available bandwidth of 500 MHz. A similar chip in China is the TRHJ-2060, a Ku-band four-channel phased array transceiver chip produced by Tianrui Xingtong. This chip has a receiving frequency range of 10.7-12.7 GHz and a transmitting frequency range of 13.7-14.5 GHz. The transceiver chip is highly compatible with the co-aperture transceiver phased array, so the antenna designed in this invention matches the frequency of this chip, allowing the phased array of this invention to be well integrated with the chip in this frequency band.

[0005] For antennas operating in two frequency bands, the ratio of the high-frequency to low-frequency center frequencies is called the frequency ratio. The co-aperture phased array of the present invention has a frequency ratio of approximately 1.2, and the transmit and receive frequencies are very close. Furthermore, the stacked design of the transmit and receive antennas can easily result in low isolation between the transmit and receive units. Because satellite communications operate at high power, low isolation can lead to signal interference and performance degradation, mutual signal interference, increased bit error rates, and even communication interruption. Currently, few articles or patents achieve a low frequency ratio for a co-aperture phased array, and while stacking the transmit and receive units, maintain high isolation between the units in the two frequency bands. Achieving high isolation under such harsh conditions is extremely challenging. Summary of the Invention

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, which is used to solve the problem in the prior art that in order to reduce the area of ​​the phased array panel, the receiving and transmitting antennas are stacked together, which easily leads to low isolation between the transceiver units.

[0007] To achieve the above-mentioned and other related purposes, the present invention provides the following technical solutions:

[0008] A high-isolation co-aperture phased array antenna with a stacked transceiver unit design, comprising a plurality of phased array units, each comprising a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, and a fifth dielectric substrate stacked in sequence from top to bottom;

[0009] The top side of the first dielectric substrate is provided with a high-frequency transmitting antenna unit metal patch, the top side of the third dielectric substrate is provided with a first metal patch in a square shape for filtering and a second metal patch in a circular shape located within the first metal patch and serving as the top structure of the isolation cavity, the top side of the fourth dielectric substrate is provided with a low-frequency receiving antenna unit metal patch serving as the bottom structure of the isolation cavity, and the fifth dielectric substrate is provided with a metal floor, a plurality of fourth metal pillars, and a plurality of fifth metal pillars for improving isolation between phased array units. The top ends of the fourth metal pillars pass through the fourth and third dielectric substrates to connect to the second metal patch, and the top ends of the fifth metal pillars pass through the fourth and third dielectric substrates to connect to the first metal patch.

[0010] In one embodiment of the present invention, the low-frequency receiving antenna unit metal patch and the high-frequency transmitting antenna unit metal patch constitute the basic form of the phased array unit; the second metal patch, the third dielectric substrate, the low-frequency receiving antenna unit metal patch, the fourth metal column and the metal floor together constitute an isolation cavity, and the first metal patch, the second metal patch, the fifth metal column and the metal floor together constitute a filtering structure.

[0011] In one embodiment of the present invention, a first microstrip line metal patch and a first metal column are provided on the top side of the second dielectric substrate, the bottom end of the first metal column is connected to the first microstrip line metal patch, and the top end of the first metal column passes through the first dielectric substrate and is connected to the high-frequency transmitting antenna unit metal patch.

[0012] In one embodiment of the present invention, a third metal patch is provided at the center of the top side of the third dielectric substrate. The third metal patch is located inside the second metal patch and is annular in shape and is used to improve the machining accuracy of the metal through hole.

[0013] In one embodiment of the present invention, a fourth circular metal patch and a fifth frame-shaped metal patch are provided on the bottom side of the fifth dielectric substrate for improving the processing accuracy of the metal through-holes. The bottom end of the fourth metal column passes through the metal floor and the fifth dielectric substrate to be connected to the fourth metal patch, and the bottom end of the fifth metal column passes through the metal floor and the fifth dielectric substrate to be connected to the fifth metal patch.

[0014] In one embodiment of the present invention, the fifth dielectric substrate is further provided with a second metal pillar serving as a patch feeding structure for the low-frequency receiving antenna unit and a third metal pillar serving as a patch feeding structure for the high-frequency transmitting antenna unit. The top end of the second metal pillar passes through the fourth dielectric substrate, the third dielectric substrate, and the second dielectric substrate to be connected to the first microstrip line metal patch, and the top end of the third metal pillar passes through the fourth dielectric substrate to be connected to the low-frequency receiving antenna unit metal patch.

[0015] In one embodiment of the present invention, two coaxial-to-microstrip line feeding adapters are further provided on the bottom side of the fifth dielectric substrate, one of the adapters is provided with a second microstrip line metal patch located on the bottom side of the fifth dielectric substrate and used to feed the high-frequency transmitting antenna unit, and the other adapter is provided with a third microstrip line metal patch located on the bottom side of the fifth dielectric substrate and used to feed the low-frequency receiving antenna unit. The second metal column passes through the metal floor and the fifth dielectric substrate to be connected to the second microstrip line metal patch, and the third metal column passes through the metal floor and the fifth dielectric substrate to be connected to the third microstrip line metal patch.

[0016] As described above, the high-isolation co-aperture phased array antenna with a stacked transceiver unit design of the present invention has the following beneficial effects: the present invention adopts a stacked transceiver antenna design, and the ratio of the high-frequency to low-frequency center frequencies is approximately 1.2, the frequencies are very close, the high-frequency and low-frequency units operate in the Ku band, and innovatively adopts the design of an isolation cavity and a filtering structure. Under the action of the isolation cavity and the filtering structure, not only is there a high degree of isolation within the operating frequency band, but the high-frequency and low-frequency units also maintain good radiation performance within their respective frequency bands, and the radiation performance of the phased array remains basically unchanged after the array is formed. The high-frequency and low-frequency phased arrays can scan to ±45° on the E-plane and H-plane. At the same time, the number of high-frequency and low-frequency phased array units of the present invention is consistent with that of existing chips, and the frequencies are also consistent with those of existing chips, so they can be easily integrated with existing chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a top-down perspective view of a 5×5 phased array antenna composed of 25 phased array units disclosed in an embodiment of the present invention;

[0018] Figure 2 is a top perspective view of a phased array unit disclosed in an embodiment of the present invention;

[0019] Figure 3 A bottom-up perspective view of a phased array unit disclosed in an embodiment of the present invention;

[0020] Figure 4 is a top perspective view of a first dielectric substrate disclosed in an embodiment of the present invention;

[0021] Figure 5 is a top perspective view of the second dielectric substrate disclosed in an embodiment of the present invention;

[0022] Figure 6 is a top perspective view of a third dielectric substrate disclosed in an embodiment of the present invention;

[0023] Figure 7 is a top perspective view of a fourth dielectric substrate disclosed in an embodiment of the present invention;

[0024] Figure 8 is a top perspective view of a fifth dielectric substrate disclosed in an embodiment of the present invention;

[0025] Figure 9 This is a top perspective view of a fifth dielectric substrate bottom-side feeding structure disclosed in an embodiment of the present invention;

[0026] Figure 10 is an S-parameter curve diagram of the phased array high-frequency and low-frequency units disclosed in an embodiment of the present invention;

[0027] Figure 11Schematic diagram of the E-plane scanning direction of 25 low-frequency units of the phased array disclosed in an embodiment of the present invention operating at 10.7 GHz;

[0028] Figure 12 Schematic diagram of the H-plane scanning direction of 25 low-frequency units of the phased array disclosed in an embodiment of the present invention operating at 10.7 GHz;

[0029] Figure 13 Schematic diagram of the E-plane scanning direction of 25 low-frequency units of the phased array disclosed in an embodiment of the present invention operating at 12.7 GHz;

[0030] Figure 14 Schematic diagram of the H-plane scanning direction of 25 low-frequency units of the phased array disclosed in an embodiment of the present invention operating at 12.7 GHz;

[0031] Figure 15 Schematic diagram of the H-plane scanning direction of 25 high-frequency units of the phased array disclosed in an embodiment of the present invention operating at 13.7 GHz;

[0032] Figure 16 Schematic diagram of the E-plane scanning direction of 25 high-frequency units of the phased array disclosed in an embodiment of the present invention operating at 13.7 GHz;

[0033] Figure 17 Schematic diagram of the H-plane scanning direction of 25 high-frequency units of the phased array disclosed in an embodiment of the present invention operating at 14.5 GHz;

[0034] Figure 18 Schematic diagram of the E-plane scanning direction of 25 high-frequency units of the phased array disclosed in an embodiment of the present invention operating at 14.5 GHz.

[0035] Component number description

[0036] 1. Phased array antenna; 2. Phased array unit; 21. First dielectric substrate; 211. High-frequency transmitting antenna unit metal patch; 22. Second dielectric substrate; 221. First microstrip line metal patch; 222. First metal column; 23. Third dielectric substrate; 231. First metal patch; 232. Second metal patch; 233. Third metal patch; 24. Fourth dielectric substrate; 241. Low-frequency receiving antenna unit metal patch; 25. Fifth dielectric substrate; 251. Metal floor; 252. Second metal column; 253. Third metal column; 254. Fourth metal column; 255. Fifth metal column; 256. Second microstrip line metal patch; 257. Third microstrip line metal patch; 258. Fourth metal patch; 259. Fifth metal patch; 26. Adapter. DETAILED DESCRIPTION

[0037] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. It should be noted that the following embodiments and features in the embodiments can be combined with each other unless there is a conflict.

[0038] See also Figures 1 to 9 The present invention provides a high-isolation co-aperture phased array antenna with a stacked transceiver unit design, comprising a plurality of phased array units 2. In this embodiment, the phased array antenna 1 comprises 25 phased array units 2. The 25 co-aperture phased array units 2 constitute a 5×5 phased array antenna 1, which includes 25 low-frequency antenna units and 25 high-frequency antenna units. Figure 1 As shown, the phased array unit 2 includes a first dielectric substrate 21, a second dielectric substrate 22, a third dielectric substrate 23, a fourth dielectric substrate 24 and a fifth dielectric substrate 25 which are stacked in sequence from top to bottom.

[0039] like Figure 4 As shown, a high-frequency transmitting antenna unit metal patch 211 is provided on the top side of the first dielectric substrate 21 .

[0040] like Figure 5 As shown, a first microstrip line metal patch 221 and a first metal column 222 are provided on the top side of the second dielectric substrate 22. The bottom end of the first metal column 222 is connected to the first microstrip line metal patch 221, and the top end of the first metal column 222 passes through the first dielectric substrate 21 and is connected to the high-frequency transmitting antenna unit metal patch 211.

[0041] like Figure 6 As shown, the top side of the third dielectric substrate 23 is provided with a first metal patch 231 in a square shape for filtering and a second metal patch 232 in a circular shape located within the first metal patch 231 and serving as the top structure of the isolation cavity. A third metal patch 233 in a circular shape located within the second metal patch 232 and used to improve the processing accuracy of the metal through-hole is provided at the center of the top side of the third dielectric substrate 23.

[0042] like Figure 7 As shown, a low-frequency receiving antenna unit metal patch 241 serving as the bottom structure of the isolation cavity is provided on the top side of the fourth dielectric substrate 24 .

[0043] like Figure 8 and Figure 9As shown, the fifth dielectric substrate 25 is provided with a metal floor 251, a second metal pillar 252 serving as a patch feed structure for the low-frequency receiving antenna unit, a third metal pillar 253 serving as a patch feed structure for the high-frequency transmitting antenna unit, a plurality of fourth metal pillars 254, and a plurality of fifth metal pillars 255 for improving the isolation between the phased array units 2. Two SSMP adapters 26 for coaxial-to-microstrip line feeding are also provided on the bottom side of the fifth dielectric substrate 25. One of the SSMP adapters 26 is provided with a second microstrip line metal patch 256 located on the bottom side of the fifth dielectric substrate 25 and used to feed the high-frequency transmitting antenna unit. The other SSMP adapter 26 is provided with a third microstrip line metal patch 257 located on the bottom side of the fifth dielectric substrate 25 and used to feed the low-frequency receiving antenna unit. The bottom side of the fifth dielectric substrate 25 is also provided with a fourth metal patch 258 in a circular shape for improving the machining accuracy of the metal through-hole and a fifth metal patch 259 in a square shape.

[0044] The top of the second metal column 252 passes through the fourth dielectric substrate 24, the third dielectric substrate 23 and the second dielectric substrate 22 to connect with the first microstrip line metal patch 221, and the bottom of the second metal column 252 passes through the metal floor 251 and the fifth dielectric substrate 25 to connect with the second microstrip line metal patch 256; the top of the third metal column 253 passes through the fourth dielectric substrate 24 to connect with the low-frequency receiving antenna unit metal patch 241, and the bottom of the third metal column 253 passes through the metal floor 251 and the fifth dielectric substrate 25 to connect with the third microstrip line metal patch 256. The top of the fourth metal pillar 254 passes through the fourth dielectric substrate 24 and the third dielectric substrate 23 to be connected to the second metal patch 232, and the bottom end of the fourth metal pillar 254 passes through the metal floor 251 and the fifth dielectric substrate 25 to be connected to the fourth metal patch 258; the top of the fifth metal pillar 255 passes through the fourth dielectric substrate 24 and the third dielectric substrate 23 to be connected to the first metal patch 231, and the bottom end of the fifth metal pillar 255 passes through the metal floor 251 and the fifth dielectric substrate 25 to be connected to the fifth metal patch 259.

[0045] Specifically, multiple phased array units 2 together constitute a large array, that is, the high-isolation co-aperture phased array antenna 1 of the present invention. The design method of the high-isolation co-aperture phased array antenna 1 of the present invention, which is based on a low-frequency ratio stacked transceiver unit design of an isolation cavity and a filtering structure, includes the following steps: a first step: designing a phased array unit 2 of a co-aperture phased array antenna with stacked low-frequency and high-frequency antenna units, wherein the low-frequency phased array unit operates at 10.7 GHz-12.7 GHz, and the high-frequency phased array unit operates at 13.7 GHz-14.5 GHz; a second step: adjusting the position, diameter, and length of the metal columns and the position and shape of the metal patches in the phased array unit 2 so that the isolation between the low-frequency and high-frequency antenna units is greater than 25 dB; and a third step: forming a large array with the multiple phased array units 2 together, wherein the array composed of the phased array units 2 achieves ±45° scanning in the E plane and ±45° scanning in the H plane within both the low-frequency and high-frequency operating bands.

[0046] More specifically, the low-frequency receiving antenna unit metal patch 241 and the high-frequency transmitting antenna unit metal patch 211 constitute the basic form of the phased array unit 2; the present invention utilizes isolation cavity technology to achieve good isolation of the common-aperture phased array unit 2 in the low-frequency band, and utilizes filtering technology to achieve good isolation of the common-aperture phased array unit 2 in the high-frequency band; to improve the isolation in the low-frequency band, the isolation cavity proposed by the present invention is composed of: a second metal patch 232, a third dielectric substrate 23, a low-frequency receiving antenna unit metal patch 241, a fourth metal column 254, and a metal floor 251. The second metal patch 232 at the top of the isolation cavity is connected to the metal floor 251 through the fourth metal column 254. The second metal patch 232 and the low-frequency receiving antenna unit metal patch 241 together constitute an electromagnetic resonant cavity similar to a dielectric filled in the middle, which can exhibit high-order resonance phenomena. The dielectric resonant cavity is defined by the upper and lower conductors of the metal patch and the magnetic wall around the patch (simulating an open circuit). When resonating, the input impedance is large and no power is radiated. The part below the second metal patch 232 can be regarded as filled with a cylindrical cavity with a dielectric constant of , and the uniform wave equation is used to solve it:

[0047]

[0048] The resonant frequency f of the resonant cavity can be solved rc

[0049]

[0050] Where a is the reflector radius, h is the height difference between the second metal patch 232 and the low-frequency receiving antenna unit metal patch 241, ∈ ris the dielectric constant of the third dielectric plate, and v0 is the propagation speed of electromagnetic waves in a vacuum. The resonant frequency calculated according to the formula can be used as a reference. Theoretically, when the isolation cavity is resonant, the input impedance is large and no power is radiated. In other words, when the top high-frequency antenna unit is connected to a matching load and the bottom low-frequency antenna is connected to a high-frequency feed, a standing wave exists in the isolator, but the electromagnetic signal will not pass through the isolator toward the top high-frequency antenna unit. It can be seen that due to the existence of the isolation cavity, the isolation of the co-aperture phased array unit in the low-frequency band is very good.

[0051] To improve the isolation in the low frequency band, the filtering structure proposed in the present invention is composed of: a first metal patch 231, a second metal patch 232, a fifth metal column 255 and a metal floor 251. That is, when the bottom low-frequency antenna is connected to a matching load and the top high-frequency antenna unit is connected to a low-frequency feed source, the filtering structure will not allow the electromagnetic signal to flow toward the bottom low-frequency antenna unit. Due to the existence of the filtering structure, the isolation of the co-aperture phased array unit 2 in the high frequency band is very good; please refer to the isolation effect. Figure 10 , Figure 10 The S parameter curve of the phased array high-frequency and low-frequency units, S11 is the return loss of the low-frequency unit, S22 is the return loss of the high-frequency unit, it can be seen that the return loss of the low-frequency and high-frequency units is very low within their own working frequency bands, S12 represents the isolation between the high-frequency and low-frequency units, the lower the S12 value, the better the isolation between the high-frequency and low-frequency units. Figure 10 It can be seen that the S12 curve has two obvious depressions in the high-frequency and low-frequency operating bands of the phased array. This is because the existence of the isolation cavity makes the isolation of the common-aperture phased array unit 2 very good in the low-frequency band; due to the existence of the filtering structure, the isolation of the common-aperture phased array unit 2 is very good in the high-frequency band.

[0052] Furthermore, conventional common-aperture phased arrays cannot simultaneously operate in the Ku band, with a frequency ratio as low as 1.2, with the same number of high-frequency and low-frequency units and high isolation between the high- and low-frequency units. This invention ultimately achieves a common-aperture phased array with low-frequency units operating at 10.7-12.7 GHz and high-frequency units operating at 13.7-14.5 GHz. While ensuring good radiation performance, the isolation between the high-frequency and low-frequency units is greater than 25 dB. The high-frequency and low-frequency phased arrays can scan to ±45° in the E and H planes. For details, please refer to Figures 11 to 18 , Figures 11 to 14 This is the E-plane and H-plane scanning pattern of the 25 low-frequency units of the phased array working at 10.7-12.7GHz. The low-frequency units of the phased array are within the working frequency band, and the E-plane and H-plane can scan up to 45°. Figures 15 to 18It is the E-plane and H-plane scanning pattern of the 25 high-frequency units of the phased array operating at 13.7-14.5GHz. Within the operating frequency band, the high-frequency units of the phased array can scan up to 45° on the E-plane and H-plane.

[0053] In summary, the present invention adopts a stacked design for the transceiver antennas, and the ratio of the high-frequency to low-frequency center frequencies is approximately 1.2, with frequencies very close. The high-frequency and low-frequency units operate in the Ku band. The innovative design of the isolation cavity and filtering structure achieves high isolation within the operating frequency band, while also ensuring good radiation performance for the high-frequency and low-frequency units within their respective frequency bands. Furthermore, the radiation performance of the phased array remains essentially unchanged after formation, and the high-frequency and low-frequency phased arrays can scan to ±45° on the E and H planes. Furthermore, the number of high-frequency and low-frequency phased array units in the present invention is consistent with that of existing chips, and the frequencies are also consistent with those of existing chips, making them easily integrated with existing chips.

[0054] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any equivalent modifications or variations made by persons skilled in the art without departing from the spirit and technical concepts disclosed herein shall be encompassed by the claims of the present invention.

Claims

1. A high-isolation co-aperture phased array antenna with a stacked transceiver unit design, characterized by: The invention comprises a plurality of phased array units (2), wherein the phased array unit (2) comprises a first dielectric substrate (21), a second dielectric substrate (22), a third dielectric substrate (23), a fourth dielectric substrate (24), and a fifth dielectric substrate (25) which are stacked in sequence from top to bottom; The top side of the first dielectric substrate (21) is provided with a high-frequency transmitting antenna unit metal patch (211), the top side of the third dielectric substrate (23) is provided with a first metal patch (231) in the shape of a square frame for filtering and a second metal patch (232) in the shape of a circular ring located inside the first metal patch (231) and serving as the top structure of the isolation cavity, the top side of the fourth dielectric substrate (24) is provided with a low-frequency receiving antenna unit metal patch (241) serving as the bottom structure of the isolation cavity, and the top side of the fifth dielectric substrate (23) is provided with a first metal patch (231) in the shape of a square frame for filtering and a second metal patch (232) located inside the first metal patch (231) and serving as the top structure of the isolation cavity. A metal floor (251), a plurality of fourth metal pillars (254), and a plurality of fifth metal pillars (255) for improving the isolation between phased array units (2) are provided on the dielectric substrate (25); the top ends of the fourth metal pillars (254) pass through the fourth dielectric substrate (24) and the third dielectric substrate (23) to be connected to the second metal patch (232); and the top ends of the fifth metal pillars (255) pass through the fourth dielectric substrate (24) and the third dielectric substrate (23) to be connected to the first metal patch (231).

2. The high-isolation co-aperture phased array antenna with stacked transceiver units according to claim 1, characterized in that: The low-frequency receiving antenna unit metal patch (241) and the high-frequency transmitting antenna unit metal patch (211) constitute the basic form of the phased array unit (2); the second metal patch (232), the third dielectric substrate (23), the low-frequency receiving antenna unit metal patch (241), the fourth metal column (254) and the metal floor (251) together constitute an isolation cavity; and the first metal patch (231), the second metal patch (232), the fifth metal column (255) and the metal floor (251) together constitute a filtering structure.

3. The high-isolation co-aperture phased array antenna with stacked transceiver units according to claim 1, characterized in that: A first microstrip line metal patch (221) and a first metal column (222) are provided on the top side of the second dielectric substrate (22); the bottom end of the first metal column (222) is connected to the first microstrip line metal patch (221); and the top end of the first metal column (222) passes through the first dielectric substrate (21) and is connected to the high-frequency transmitting antenna unit metal patch (211).

4. The high-isolation co-aperture phased array antenna with stacked transceiver units according to claim 1, characterized in that: A third metal patch (233) is provided at the center of the top side of the third dielectric substrate (23), which is located inside the second metal patch (232) and is in a circular ring shape and is used to improve the machining accuracy of the metal through hole.

5. The high-isolation co-aperture phased array antenna with a stacked transceiver unit design according to claim 1, characterized in that: A fourth metal patch (258) in a circular shape and a fifth metal patch (259) in a square shape are provided on the bottom side of the fifth dielectric substrate (25) for improving the processing accuracy of the metal through-hole. The bottom end of the fourth metal column (254) passes through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the fourth metal patch (258). The bottom end of the fifth metal column (255) passes through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the fifth metal patch (259).

6. The high-isolation co-aperture phased array antenna with stacked transceiver units according to claim 3, characterized in that: The fifth dielectric substrate (25) is further provided with a second metal column (252) serving as a low-frequency receiving antenna unit patch feeding structure and a third metal column (253) serving as a high-frequency transmitting antenna unit patch feeding structure. The top end of the second metal column (252) passes through the fourth dielectric substrate (24), the third dielectric substrate (23) and the second dielectric substrate (22) to be connected to the first microstrip line metal patch (221), and the top end of the third metal column (253) passes through the fourth dielectric substrate (24) to be connected to the low-frequency receiving antenna unit metal patch (241).

7. The high-isolation co-aperture phased array antenna with stacked transceiver units according to claim 6, characterized in that: The bottom side of the fifth dielectric substrate (25) is further provided with two coaxial-to-microstrip line feeding adapters (26), one of the adapters (26) being provided with a second microstrip line metal patch (256) located on the bottom side of the fifth dielectric substrate (25) and used for feeding the high-frequency transmitting antenna unit, and the other adapter (26) being provided with a third microstrip line metal patch (257) located on the bottom side of the fifth dielectric substrate (25) and used for feeding the low-frequency receiving antenna unit, the bottom end of the second metal column (252) passing through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the second microstrip line metal patch (256), and the bottom end of the third metal column (253) passing through the metal floor (251) and the fifth dielectric substrate (25) to be connected to the third microstrip line metal patch (257).

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