A wide-tuning high-power microwave signal generating device and method

Abstract

This invention provides a wide-tunability, high-power microwave signal generation device and method, comprising a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch, and a bias voltage source. The acousto-optic modulator is connected to the laser, the signal generator, and the electro-optic intensity modulator, respectively. The electro-optic intensity modulator is connected to the acousto-optic modulator, the arbitrary waveform generator, and the all-fiber amplifier, respectively. The Pockels cell is connected to the all-fiber amplifier and the solid-state amplifier, respectively. The photoconductive semiconductor switch is connected to the solid-state amplifier and the bias voltage source, respectively. This invention provides a wide-tunability, high-power microwave signal generation device and method to solve the problems of difficulty in rapidly changing the frequency of microwave signals generated by existing vacuum electronic devices and the bulky size of vacuum electronic devices.

Description

Technical Field

[0001] This invention relates to the field of microwave technology, and more particularly to a wide-tuning high-power microwave signal generation device and method. Background Technology

[0002] Wide-tunable high-power microwave signals have wide applications in military radar, communication, and remote sensing equipment systems. The calibration and use of traditional high-power, wide-frequency-range power meters and sensors largely rely on combinations of multiple signal sources and high-power amplifiers. This approach suffers from poor repeatability and stability of high-power output, poor spectral purity of high-power microwave signals, large size, and complex operation. Therefore, there is an urgent need to research methods for generating wide-tunable, high-power, and highly stable microwave signals. Currently, narrowband high-power microwave signals are often generated using vacuum electronic devices. However, the output parameters of these devices are typically fixed, making it difficult to quickly change the frequency and achieve wide tuning. Furthermore, vacuum electronic devices are often bulky and cannot meet the development needs of equipment systems. Summary of the Invention

[0003] This invention provides a wide-tuning high-power microwave signal generation device and method to solve the problems of microwave signals generated by existing vacuum electronic devices having difficulty in rapidly changing frequency and bulky size between vacuum electronic devices.

[0004] On one hand, the present invention provides a wide-tunability high-power microwave signal generating device, comprising a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch, and a bias voltage source. The acousto-optic modulator is connected to the laser, the signal generator, and the electro-optic intensity modulator, respectively. The electro-optic intensity modulator is connected to the acousto-optic modulator, the arbitrary waveform generator, and the all-fiber amplifier, respectively. The Pockels cell is connected to the all-fiber amplifier and the solid-state amplifier, respectively. The photoconductive semiconductor switch is connected to the solid-state amplifier and the bias voltage source, respectively. In this embodiment:

[0005] The laser is used to output laser pulse signals;

[0006] The acousto-optic modulator is used to perform time-domain waveform processing on the laser pulse signal;

[0007] The electro-optic intensity modulator is used to modulate the processed laser pulse signal and output a seed laser;

[0008] The arbitrary waveform generator is used to provide a radio frequency signal to the electro-optic intensity modulator, and the frequency of the radio frequency signal is adjustable;

[0009] The all-fiber amplifier is used to amplify the seed laser;

[0010] The Pockels cell is used to reduce the repetition frequency of the amplified seed laser;

[0011] The solid-state amplifier is used to further amplify the seed laser after the repetition frequency has been reduced;

[0012] The photoconductive semiconductor switch is used to output a microwave signal when irradiated by the seed laser, which is further amplified.

[0013] The bias voltage source is used to provide a bias voltage for the photoconductive semiconductor switch.

[0014] The above scheme generates wide-tuning, high-power microwave signals. At the same time, since the size of photoconductive semiconductor switches is typically small and easy to integrate, the device is smaller than traditional large vacuum devices.

[0015] Optionally, the laser is driven by electrical pulses.

[0016] On the other hand, the present invention provides a method for generating wide-tuning high-power microwave signals, applicable to any of the above-mentioned devices, comprising:

[0017] Drive the laser to output laser pulse signals;

[0018] The laser pulse signal is input into an acousto-optic modulator for time-domain waveform processing.

[0019] The processed laser pulse signal is input into an electro-optic intensity modulator for modulation, and a seed laser is output. The radio frequency signal required by the electro-optic intensity modulator is provided by an arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable.

[0020] The seed laser is amplified by an all-fiber amplifier.

[0021] The amplified seed laser is input into the Pockels cell to reduce the repetition frequency;

[0022] The seed laser, after its repetition frequency has been reduced, is then further amplified by a solid-state amplifier.

[0023] The amplified seed laser is then directed onto a photoconductive semiconductor switch to output a microwave signal. The photoconductive semiconductor switch is biased by a bias voltage source.

[0024] Optionally, the laser is driven by electrical pulses. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 A schematic diagram of the frame of a wide-tuning high-power microwave signal generating device provided in an embodiment of the present invention;

[0027] Figure 2 This is a flowchart illustrating a method for generating wide-tuning high-power microwave signals according to an embodiment of the present invention. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0029] Figure 1 The framework of a wide-tunable high-power microwave signal generation device provided by an embodiment of the present invention is shown in detail. It includes a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch, and a bias voltage source. The acousto-optic modulator is connected to the laser, the signal generator, and the electro-optic intensity modulator, respectively. The electro-optic intensity modulator is connected to the acousto-optic modulator, the arbitrary waveform generator, and the all-fiber amplifier, respectively. The Pockels cell is connected to the all-fiber amplifier and the solid-state amplifier, respectively. The photoconductive semiconductor switch is connected to the solid-state amplifier and the bias voltage source, respectively. Wherein:

[0030] Lasers are used to output laser pulse signals;

[0031] Acousto-optic modulators are used for time-domain waveform processing of laser pulse signals;

[0032] An electro-optic intensity modulator is used to modulate the processed laser pulse signal and output a seed laser.

[0033] An arbitrary waveform generator is used to provide an radio frequency (RF) signal for an electro-optic intensity modulator; the frequency of the RF signal is adjustable.

[0034] All-fiber amplifiers are used to amplify seed lasers;

[0035] The Pockels cell is used to reduce the repetition frequency of the amplified seed laser;

[0036] Solid-state amplifiers are used to further amplify the seed laser after the repetition frequency has been reduced;

[0037] Photoconductive semiconductor switches are used to output microwave signals when irradiated by a seed laser that has been further amplified;

[0038] The bias voltage source is used to provide bias voltage for the photoconductive semiconductor switch.

[0039] In one example, the laser is driven by electrical pulses.

[0040] Since the waveform will be distorted when the signal is amplified, resulting in a high initial value followed by a low initial value, it is necessary to preprocess the time-domain waveform of the laser pulse signal output by the laser using an acousto-optic modulator with a high extinction ratio, so that the output pulse signal is low at the beginning and high at the end, in order to compensate for the envelope distortion caused by the subsequent gain saturation effect.

[0041] By combining an acousto-optic modulator and an electro-optic intensity modulator, burst-mode seed lasers with an average power in the milliwatt range can be obtained.

[0042] The adjustable radio frequency signal provided by the arbitrary waveform generator enables wide tuning of the microwave signal. High-power microwave signals can be obtained by exciting the photoconductor semiconductor switch with the laser signal after passing through the all-fiber amplifier and solid-state amplifier. The high power of the microwave signal can reach the kilowatt level.

[0043] In one example, the repetition frequency and duration of the laser pulse signal are 20 kHz and 100 ns, respectively, and the RF signal provided by the arbitrary waveform generator has an adjustment range of 0.8 GHz to 1.2 GHz. The Pockels cell reduces the repetition frequency of the amplified laser signal from 25 kHz to 50 Hz.

[0044] The above scheme generates wide-tuning, high-power microwave signals. At the same time, since the size of photoconductive semiconductor switches is typically small and easy to integrate, the device is smaller than traditional large vacuum devices.

[0045] Based on the same inventive concept Figure 2 The flowchart illustrates a wide-tuning high-power microwave signal generation method according to an embodiment of the present invention, applied to the above-mentioned apparatus, including:

[0046] Drive the laser to output laser pulse signals;

[0047] The laser pulse signal is input into an acousto-optic modulator for time-domain waveform processing.

[0048] The processed laser pulse signal is input into an electro-optic intensity modulator for modulation, and a seed laser is output. The radio frequency signal required by the electro-optic intensity modulator is provided by an arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable.

[0049] The seed laser is amplified by inputting it into an all-fiber amplifier;

[0050] The amplified seed laser is input into the Pockels cell to reduce the repetition frequency;

[0051] The seed laser, after its repetition frequency has been reduced, is then further amplified by a solid-state amplifier.

[0052] The amplified seed laser is then directed onto the photoconductive semiconductor switch, which outputs a microwave signal. The photoconductive semiconductor switch is biased by a bias voltage source.

[0053] In one example, the laser is driven by electrical pulses.

[0054] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the invention.

[0055] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A wide-tuning, high-power microwave signal generating device, characterized in that, The system includes a laser, an acousto-optic modulator, a signal generator, an electro-optic intensity modulator, an arbitrary waveform generator, an all-fiber amplifier, a Pockels cell, a solid-state amplifier, a photoconductive semiconductor switch, and a bias voltage source. The acousto-optic modulator is connected to the laser, the signal generator, and the electro-optic intensity modulator. The electro-optic intensity modulator is connected to the acousto-optic modulator, the arbitrary waveform generator, and the all-fiber amplifier. The Pockels cell is connected to the all-fiber amplifier and the solid-state amplifier. The photoconductive semiconductor switch is connected to the solid-state amplifier and the bias voltage source. Wherein: The laser is used to output laser pulse signals; The acousto-optic modulator is used to perform time-domain waveform processing on the laser pulse signal; The electro-optic intensity modulator is used to modulate the processed laser pulse signal and output a seed laser; The arbitrary waveform generator is used to provide a radio frequency signal to the electro-optic intensity modulator, and the frequency of the radio frequency signal is adjustable; The all-fiber amplifier is used to amplify the seed laser; The Pockels cell is used to reduce the repetition frequency of the amplified seed laser. The solid-state amplifier is used to further amplify the seed laser after the repetition frequency has been reduced; The photoconductive semiconductor switch is used to output a microwave signal when irradiated by the seed laser, which is further amplified. The bias voltage source is used to provide a bias voltage for the photoconductive semiconductor switch.

2. The apparatus according to claim 1, characterized in that, The laser is driven by electrical pulses.

3. A method for generating wide-tuning high-power microwave signals, applied to the apparatus described in claim 1 or 2, characterized in that, include: Drive the laser to output laser pulse signals; The laser pulse signal is input into an acousto-optic modulator for time-domain waveform processing. The processed laser pulse signal is input into an electro-optic intensity modulator for modulation, and a seed laser is output. The radio frequency signal required by the electro-optic intensity modulator is provided by an arbitrary waveform generator, and the frequency of the radio frequency signal is adjustable. The seed laser is amplified by an all-fiber amplifier. The amplified seed laser is input into the Pockels cell to reduce the repetition frequency; The seed laser, after its repetition frequency has been reduced, is then further amplified by a solid-state amplifier. The amplified seed laser is then directed onto a photoconductive semiconductor switch to output a microwave signal. The photoconductive semiconductor switch is biased by a bias voltage source.

4. The method according to claim 3, characterized in that, The laser is driven by electrical pulses.

Images