Thyristor based on ion implantation type temperature sensor and preparation method thereof

Abstract

The application discloses a thyristor based on an ion implantation type temperature sensor and a preparation method thereof, wherein a substrate, a buffer layer, a drift layer and a base region are sequentially arranged from bottom to top in the thyristor; a PiN temperature sensor is arranged in the base region through ion implantation; the PiN temperature sensor is a lateral PiN temperature sensor with an isolation region and is P-type doped and N-type doped; gate electrodes are arranged at two ends of the base region; an anode layer is arranged on an upper surface of the base region, a region between the PiN temperature sensor and the gate electrodes; an anode is arranged on an upper surface of the anode layer; and a cathode is arranged on a lower surface of the substrate. The application uses a semiconductor device as the temperature sensor, has the advantages of high linearity and sensitivity, integrates the temperature sensor into the interior of the thyristor, greatly improves the integration of the thyristor, combines the temperature sensor with the thyristor, and makes the thyristor temperature measurement system more compact and efficient.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor manufacturing, and particularly relates to a thyristor based on an ion implantation type temperature sensor and a preparation method thereof. BACKGROUND

[0002] In the use process of power devices such as thyristors, many temperature-related problems are often encountered. The increase of working temperature not only reduces the long-term working reliability of the device, but also causes the device to fail in high-temperature applications such as short-circuit, pulse and switching, thereby causing irreversible damage to the system. Taking a silicon carbide thyristor as an example, it needs to withstand a high current peak in a pulse switching system. High current may cause the anode metal to melt or slowly increase the device leakage current under the action of repeated discharge thermal stress, thereby reducing the reliability of the pulse power system.

[0003] At present, in order to monitor the temperature change of the thyristor, an external temperature measurement circuit or a shell temperature of the thyristor is generally used for temperature monitoring. The external temperature measurement circuit generally collects characteristic parameters of the thyristor during operation, and calculates the junction temperature by establishing a thermal resistance model in a data calculation module.

[0004] The existing method for monitoring the temperature change of the thyristor has the disadvantages of being unable to monitor the internal junction temperature change of the thyristor in real time, inaccurate measurement of temperature, affecting the operation of the thyristor, large occupied area and low integration. SUMMARY

[0005] In order to solve the above problems in the prior art, the present application provides a thyristor based on an ion implantation type temperature sensor and a preparation method thereof. The technical problem to be solved by the present application is solved by the following technical scheme:

[0006] In a first aspect, the present application provides a thyristor based on an ion implantation type temperature sensor, comprising:

[0007] a substrate, a buffer layer, a drift layer, a base region, a PiN temperature sensor, a gate electrode, an anode layer, an anode and a cathode; wherein,

[0008] The substrate, the buffer layer, the drift layer and the base region are sequentially arranged from bottom to top;

[0009] The PiN temperature sensor is arranged in the base region by ion implantation; the PiN temperature sensor is a lateral PiN temperature sensor with an isolation region;

[0010] The gate electrode is arranged at both ends of the base region;

[0011] The anode layer is arranged on the upper surface of the base region, and the region between the PiN temperature sensor and the gate electrode.

[0012] The anode is arranged on the upper surface of the anode layer;

[0013] The cathode is arranged on the lower surface of the substrate.

[0014] In one embodiment of the present application, the material of the substrate comprises silicon carbide; the doping type of the substrate is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0015] In one embodiment of the present application, the material of the buffer layer comprises silicon carbide, and the thickness is 1-3 μm; the buffer layer is P-type light doping, and the doping concentration is 2.2×10 17 -4×10 18 cm -3 .

[0016] In one embodiment of the present application, the material of the drift layer comprises silicon carbide, and the thickness is 20-40 μm; the drift layer is P-type light doping, and the doping concentration is 1×10 15 -5×10 15 cm -3 .

[0017] In one embodiment of the present application, the material of the base region comprises silicon carbide, and the thickness is 4-6 μm; the base region is N-type light doping, and the doping concentration is 1×10 17 -3×10 17 cm -3 .

[0018] In one embodiment of the present application, the PiN temperature sensor comprises:

[0019] a P-type isolation region, an N-type i region, a P region, an N region, a sensor anode, a sensor cathode and an isolation electrode; wherein,

[0020] The P-type isolation region is formed by ion implantation and has a shape of a concave letter;

[0021] The N-type i region is formed by ion implantation and is arranged in the groove of the P-type isolation region;

[0022] The P region is arranged in the N-type i region at a position close to one end of the P-type isolation region;

[0023] The N region is arranged in the N-type i region at a position close to the other end of the P-type isolation region;

[0024] The sensor anode is arranged on the upper surface of the P region;

[0025] The sensor cathode is arranged on the upper surface of the N region.

[0026] The isolation electrode is arranged on both ends of the P-type isolation region.

[0027] In one embodiment of the present application, the concentration distribution of the P-type isolation region is Gaussian distribution, and the peak concentration ranges from 5×10 18 cm -3 -2×10 19 cm -3 , and the implantation depth is 0.5-2 μm.

[0028] In one embodiment of the present application, the concentration distribution of the N-type i region is Gaussian distribution, and the peak concentration ranges from 1×10 18 cm -3 -5×10 18 cm -3 , and the implantation depth is 0.2-1 μm.

[0029] In one embodiment of the present application, the material of the anode layer includes silicon carbide with a thickness of 1-3 μm; the anode layer is P-type heavily doped, and the doping concentration is 5×10 18 -1×10 20 cm -3 .

[0030] In a second aspect, the present application provides a preparation method of a thyristor based on an ion implantation type temperature sensor, and the method comprises the following steps:

[0031] Selecting a substrate, performing epitaxial growth and multi-layer ion implantation on the substrate to obtain a buffer layer, a drift layer, a base region and a silicon carbide P-type anode layer;

[0032] Etching the silicon carbide P-type anode layer to form two anode layers on the upper surface of the base region in partial regions;

[0033] Forming gate regions by ion implantation on both ends of the base region; forming P-type isolation regions by ion implantation in partial regions of the base region between the two anode layers; forming N-type i regions by ion implantation in partial regions of the P-type isolation regions; forming P regions and N regions respectively in partial regions of the N-type i regions close to both ends of the P-type isolation regions and forming corresponding ohmic contacts; preparing a sensor anode on the upper surface of the P region and a sensor cathode on the upper surface of the N region; and preparing isolation electrodes on both ends of the P-type isolation region; the P-type isolation region, the N-type i region, the P region, the N region, the sensor anode, the sensor cathode and the isolation electrodes constitute a PiN temperature sensor.

[0034] Arranging gates on both ends of the gate regions, and the gate regions and the gates constitute gate electrodes.

[0035] preparing an anode on the upper surface of the anode layer;

[0036] preparing a cathode on the lower surface of the substrate.

[0037] Advantages of the present application:

[0038] In the scheme provided by the present application, the semiconductor device is used as the temperature sensor, which has the advantages of high linearity and sensitivity; the temperature sensor is integrated into the interior of the thyristor, which greatly improves the integration of the thyristor, and the combination of the temperature sensor and the thyristor makes the thyristor temperature measurement system more compact and efficient. At the same time, real-time temperature monitoring of the interior of the thyristor is realized, which ensures the accuracy and real-time of the measurement results, and provides a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the integration of the temperature sensor, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 A structure schematic diagram of a thyristor based on an ion implantation type temperature sensor provided by an embodiment of the present application;

[0040] Figure 2 A temperature change schematic diagram in the switching process of a thyristor of an ion implantation type temperature sensor provided by an embodiment of the present application;

[0041] Figure 3 A working voltage and current change relationship diagram of an ion implantation type temperature sensor provided by an embodiment of the present application with time;

[0042] Figure 4 A sensor measured temperature and actual temperature of a thyristor relationship diagram provided by an embodiment of the present application;

[0043] Figures 5a-5c A simulation result diagram of forward conduction characteristics, switching characteristics and forward blocking characteristics simulation of a thyristor integrated with a temperature sensor and a thyristor without integrated sensor provided by an embodiment of the present application;

[0044] Figure 6 A step schematic diagram of a preparation method of a thyristor based on an ion implantation type temperature sensor provided by an embodiment of the present application;

[0045] Figures 7a-7d A process schematic diagram of a thyristor based on an ion implantation type temperature sensor provided by an embodiment of the present application.

[0046] REFERENCE NUMERALS

[0047] 1-substrate, 2-buffer layer, 3-drift layer, 4-base region, 5-PiN temperature sensor, 6-gate electrode, 7-anode layer, 8-anode, 9-cathode, 51-P-type isolation region, 52-N-type i region, 53-P region, 54-N region, 55-sensor anode, 56-sensor cathode, 57-isolation electrode, 61-gate region, 62-gate. DETAILED DESCRIPTION

[0048] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0049] In order to achieve the purpose of real-time monitoring of the internal temperature of a thyristor, an embodiment of the present invention provides a thyristor based on an ion implantation temperature sensor and a preparation method thereof.

[0050] Below, a thyristor based on an ion implantation type temperature sensor provided by an embodiment of the present invention is first introduced.

[0051] like Figure 1 As shown, a thyristor based on an ion implantation temperature sensor provided by an embodiment of the present invention may include:

[0052] The substrate 1, the buffer layer 2, the drift layer 3 and the base region 4 are arranged in sequence from bottom to top;

[0053] The PiN temperature sensor 5 is provided in the base region 4 by ion implantation; the PiN temperature sensor 5 is a lateral PiN temperature sensor with an isolation region;

[0054] The gate electrodes 6 are provided at both ends of the base region 4;

[0055] The anode layer 7 is provided on the upper surface of the base region 4, in the region between the PiN temperature sensor 5 and the gate electrode 6;

[0056] The anode 8 is provided on the upper surface of the anode layer 7;

[0057] The cathode 9 is disposed on the lower surface of the substrate 1 .

[0058] The thyristor based on the ion-implanted temperature sensor provided in the embodiment of the present invention uses a semiconductor device as a temperature sensor, which has the advantages of high linearity and sensitivity. The temperature sensor is integrated into the interior of the thyristor, which greatly improves the integration level of the thyristor. The combination of the temperature sensor and the thyristor makes the thyristor temperature measurement system more compact and efficient. At the same time, real-time temperature monitoring of the thyristor is achieved, ensuring the accuracy and real-time performance of the measurement results, and providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the integration of the temperature sensor, the basic operating characteristics of the thyristor are not affected, and it still maintains excellent performance and reliability.

[0059] Preferably, the material of the substrate 1 can include silicon carbide; the doping type of the substrate 1 is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0060] Preferably, the material of the buffer layer 2 can include silicon carbide, and the thickness is 1-3 μm; the buffer layer 2 is P-type light doping, and the doping concentration is 2.2×10 17 -4×10 18 cm -3 .

[0061] It can be understood that the role of the buffer layer in the thyristor can include:

[0062] Prevent overvoltage and overcurrent: during the opening and closing of the thyristor, due to the inductance effect in the circuit, voltage spikes and overvoltage will be generated. The buffer layer absorbs these voltage spikes to prevent the thyristor from being damaged by overvoltage.

[0063] Reduce switching loss: the buffer layer limits the rate of change of current and voltage, reducing the loss of the thyristor during switching, thereby prolonging its service life.

[0064] ‌Suppress transient overvoltage: when the thyristor is turned off, the supply voltage will suddenly increase on the thyristor, causing transient overvoltage. The buffer layer can also suppress this transient overvoltage through a parallel RC network to prevent the thyristor from being triggered by excessive junction capacitance current.

[0065] Through these effects, the buffer layer ensures the stability and reliability of the thyristor during switching, protects the equipment from damage, and improves the overall performance of the circuit.

[0066] Preferably, the material of the drift layer 3 can include silicon carbide, and the thickness is 20-40 μm; the drift layer 3 is P-type light doping, and the doping concentration is 1×10 15 -5×10 15 cm -3 .

[0067] It can be understood that the working principle of the drift layer is based on its light doping characteristics. Due to the low doping concentration, the number of carriers in the drift layer is small, resulting in poor conductivity and high resistance. This characteristic allows the drift layer to remain stable at high voltage and not be broken down by excessive voltage.

[0068] Preferably, the material of the base region 4 can include silicon carbide, and the thickness is 4-6 μm; the base region 4 is N-type light doping, and the doping concentration is 1×10 17 -3×10 17 cm-3 .

[0069] It can be understood that the role of the base region in the thyristor can include:

[0070] Controlling the opening and closing of the thyristor: the base region plays a key role in the thyristor, by controlling the current between the base region and the cathode, the opening and closing of the thyristor can be achieved. When a positive voltage is applied to the gate electrode, a current channel is formed between the base region and the cathode, thereby turning on the thyristor; conversely, when a negative voltage is applied, the channel is cut off, and the thyristor is turned off.

[0071] ‌Providing internal positive feedback: the thyristor contains two sub-transistors, a pnp transistor and an npn transistor. When a base current is applied to the npn transistor, it will draw an amplified current from the collector, which will provide a base current for the pnp transistor, forming an internal positive feedback loop. This positive feedback mechanism allows the thyristor to remain in the on state after being turned on, even if the gate drive current is removed, the thyristor can still remain in the on state.

[0072] Influencing the performance of the thyristor: the structure and parameters of the base region have an important influence on the performance of the thyristor. For example, the doping concentration and thickness of the base region will affect the opening voltage and on-resistance of the thyristor. Higher doping concentration and thinner base region can reduce the opening voltage, but may increase the on-resistance; conversely, lower doping concentration and thicker base region will increase the opening voltage, but reduce the on-resistance.

[0073] It can be understood that the gate electrode 6 can include: a gate electrode 62 and a gate region 61; wherein the gate region 61 is arranged at both ends of the base region 4, and the gate electrode 62 is arranged on the upper surface of the gate region 61.

[0074] Preferably, the material of the anode layer 7 can include: silicon carbide, with a thickness of 1-3 μm; the anode layer 7 is P-type heavily doped, with a doping concentration of 5×10 18 -1×10 20 cm -3 .

[0075] Preferably, the PiN temperature sensor 5 can include:

[0076] P-type isolation region 51, N-type i region 52, P region 53, N region 54, sensor anode 55, sensor cathode 56 and isolation electrode 57; wherein,

[0077] The P-type isolation region 51 is formed by ion implantation and has a concave shape;

[0078] The N-type i region 52 is formed by ion implantation and is arranged in the groove of the P-type isolation region 51;

[0079] The P region 53 is arranged in the N-type i region 52 near one end of the P-type isolation region 51;

[0080] The N region 54 is arranged in the N-type i region 52 near the other end of the P-type isolation region 51;

[0081] The sensor anode 55 is arranged on the upper surface of the P region 53;

[0082] The sensor cathode 56 is arranged on the upper surface of the N region 54;

[0083] The isolation electrode 57 is arranged at both ends of the P-type isolation region 51.

[0084] Preferably, the concentration distribution of the P-type isolation region 51 is Gaussian distribution, the peak concentration ranges from 5*10 18 cm -3 -2*10 19 cm -3 , and the implantation depth is 0.5-2 μm.

[0085] Preferably, the concentration distribution of the N-type i region 52 is Gaussian distribution, the peak concentration ranges from 1*10 18 cm -3 -5*10 18 cm -3 , and the implantation depth is 0.2-1 μm.

[0086] It can be understood that, in order to enable the temperature sensor inside the thyristor to work normally, the isolation region needs to be implanted outside the lateral PiN temperature sensor, and the isolation is performed in the manner of PN junction isolation, that is, a negative voltage is biased at the isolation electrode of the sensor. When the thyristor works, a constant current source needs to be biased to the lateral PiN temperature sensor. When the working current is constant, the working voltage of the PiN temperature sensor is approximately linearly related to the temperature. The temperature inside the thyristor can be obtained through the voltage drop of the temperature sensor.

[0087] It can be understood that, the semiconductor device is adopted as the PiN temperature sensor in the embodiment of the present application, and the temperature sensor made of the semiconductor device has the advantages of high linearity and sensitivity. The semiconductor temperature sensor is selected to be integrated inside the thyristor, which greatly improves the integration degree of the power device, and can monitor the temperature change inside the thyristor in real time.

[0088] In order to verify the feasibility and beneficial effects of the thyristor based on the ion implantation type temperature sensor provided in the embodiment of the present application, a switching circuit is built for simulation, the temperature change in the actual switching process of the thyristor and the working condition of the integrated temperature sensor are simulated by setting the material parameters and thermal resistance coefficient of silicon carbide, the temperature change in the switching process is as shown in Figure 2 , and the working condition of the integrated temperature sensor is as shown in Figure 2As can be seen from the above, the temperature change of the thyristor mainly occurs in the turn-off process, because the thyristor needs to bear a large voltage and current in the turn-off process, so the temperature change is large, and the working voltage of the sensor will also change in the turn-off process. The relationship between the working voltage and current of the sensor and time is shown in the following table: Figure 3 As can be seen from the above, the temperature change of the thyristor mainly occurs in the turn-off process, because the thyristor needs to bear a large voltage and current in the turn-off process, so the temperature change is large, and the working voltage of the sensor will also change in the turn-off process. The relationship between the working voltage and current of the sensor and time is shown in the following table: Figure 3 As can be seen from the above, the temperature change of the thyristor mainly occurs in the turn-off process, because the thyristor needs to bear a large voltage and current in the turn-off process, so the temperature change is large, and the working voltage of the sensor will also change in the turn-off process. The relationship between the working voltage and current of the sensor and time is shown in the following table:

[0089] The relationship between the measured temperature of the sensor and the actual temperature of the thyristor is shown in the following table: Figure 4 As can be seen from the above, the temperature change of the thyristor mainly occurs in the turn-off process, because the thyristor needs to bear a large voltage and current in the turn-off process, so the temperature change is large, and the working voltage of the sensor will also change in the turn-off process. The relationship between the working voltage and current of the sensor and time is shown in the following table: Figure 4 As can be seen from the above, the temperature change of the thyristor mainly occurs in the turn-off process, because the thyristor needs to bear a large voltage and current in the turn-off process, so the temperature change is large, and the working voltage of the sensor will also change in the turn-off process. The relationship between the working voltage and current of the sensor and time is shown in the following table:

[0090] The simulation results of the forward conduction characteristics, switching characteristics and forward blocking characteristics of the thyristor integrated with the temperature sensor and the thyristor without the integrated sensor are shown in the following tables: Figure 5a , Figure 5b and Figure 5c respectively. The comparison chart of the forward conduction characteristics of the thyristor integrated with the temperature sensor and the thyristor without the integrated sensor is shown in the following table: Figure 5a The comparison chart of the switching characteristics of the thyristor integrated with the temperature sensor and the thyristor without the integrated sensor is shown in the following table: Figure 5b The comparison chart of the forward blocking characteristics of the thyristor integrated with the temperature sensor and the thyristor without the integrated sensor is shown in the following table: Figure 5c As can be seen from the simulation results in the above tables, the basic working characteristics of the thyristor integrated with the temperature sensor are not affected. Figure 5a , Figure 5b and Figure 5c

[0091] In a second aspect, corresponding to the above-mentioned thyristor embodiments, the present application also provides a preparation method of a thyristor based on an ion implantation type temperature sensor, as shown in the following table: Figure 6 The preparation method can include the following steps:

[0092] S1, a substrate 1 is selected, and epitaxial growth and multi-layer ion implantation are performed on the substrate 1 to obtain a buffer layer 2, a drift layer 3, a base region 4 and a silicon carbide P-type anode layer.

[0093] Specifically, in the preparation process, the doping type of the substrate 1 is selected as N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 ​After the substrate 1 is obtained, a buffer layer 2 of P-type light doping with a thickness of 1-3 μm and a doping concentration of 2.2 x 10 17 -4 x 10 18 cm -3 is first formed. Then, a drift layer 3 of P-type light doping with a thickness of 20-40 μm and a doping concentration of 1 x 10 15 -5 x 10 15 cm -3 is formed. Next, a base region 4 of N-type light doping with a thickness of 4-6 μm and a doping concentration of 1 x 10 17 -3 x 10 17 cm -3 is formed. Finally, a silicon carbide P-type anode layer with a thickness of 1-3 μm and a doping concentration of 1 x 10 18 -5 x 10 19 cm -3 is formed.

[0094] S2, the silicon carbide P-type anode layer is etched to form two anode layers 7 on the upper surface of the base region 4.

[0095] Specifically, after the epitaxy is completed, etching is performed to form the anode region of the thyristor.

[0096] S3, gate regions 61 are formed at both ends of the base region 4 by ion implantation; P-type isolation regions 51 are formed in the base region between the two anode layers by ion implantation; N-type i regions 52 are formed in the P-type isolation regions 51 by ion implantation; P regions 53 and N regions 54 are formed in the N-type i regions 52 near both ends of the P-type isolation regions 51, and corresponding ohmic contacts are formed; sensor anodes 55 are prepared on the upper surface of the P regions 53, sensor cathodes 56 are prepared on the upper surface of the N regions 54, and isolation electrodes 57 are prepared at both ends of the P-type isolation regions 51; the P-type isolation regions 51, the N-type i regions 52, the P regions 53, the N regions 54, the sensor anodes 55, the sensor cathodes 56, and the isolation electrodes 57 constitute a PiN temperature sensor 5.

[0097] Specifically, two gate regions 61 are formed on the upper surface at both ends of the base region 4 by ion implantation; P-type isolation regions 51 are formed in the base region between the two anode layers by ion implantation, the implantation depth of the P-type isolation regions 51 is 0.5-2 μm, the concentration distribution is Gaussian distribution, and the peak concentration ranges from 5 x 10 18 cm -3 -2 x 10 19 cm -3 , and the structure diagram of the obtained device is as shown in Figure 7aAs shown in the figure. The N-type i region 52 is formed by ion implantation in the partial region of the P-type isolation region 51, the implantation depth of the N-type i region 52 is 0.2-1 μm, the concentration distribution is Gaussian distribution, and the peak concentration range is 1×10 18 cm -3 -5×10 18 cm -3 The structure diagram of the obtained device is shown in the figure. Figure 7b The P region 53 and the corresponding ohmic contact are formed in the partial region of the N-type i region 52 close to one end of the P-type isolation region 51, and the N region 54 and the corresponding ohmic contact are formed in the partial region of the N-type i region 52 close to the other end of the P-type isolation region 51, and the structure diagram of the obtained device is shown in the figure. Figure 7c The sensor anode 55 is prepared on the upper surface of the P region 53, the sensor cathode 56 is prepared on the upper surface of the N region 54, and the isolation electrode 57 is prepared at both ends of the P-type isolation region 51; it can be understood that the preparation method of the sensor anode 55, the sensor cathode 56 and the isolation electrode 57 is the same as that of the gate 62, the anode 8 and the cathode 9, and the specific steps are described below. The P-type isolation region 51, the N-type i region 52, the P region 53, the N region 54, the sensor anode 55, the sensor cathode 56 and the isolation electrode 57 constitute the PiN temperature sensor 5. Through the above preparation process, the PIN temperature sensor is integrated in the thyristor.

[0098] S4, the gate 62 is arranged at both ends of the gate region 61, and the gate region 61 and the gate 62 constitute the gate electrode 6.

[0099] Specifically, in the process of arranging the gate electrode 6, ion implantation is performed on both ends of the base region 4 to form the gate region 61; then, the nickel metal is deposited on the upper surface of the gate region 61 by using the magnetron sputtering method, and then heat annealing is performed under the first preset annealing condition to form a good N-type ohmic contact, thereby obtaining the gate 62. The gate 62 and the gate region 61 constitute the gate electrode 6; wherein the first preset annealing condition can be selected to be set as: annealing temperature 950℃, annealing time 15 minutes.

[0100] S5, the anode 8 is prepared on the upper surface of the anode layer 7.

[0101] In the process of arranging the anode, the aluminum metal is deposited on the P-type anode region by using the magnetron sputtering method, and then heat annealing is performed under the second preset annealing condition to form a good P-type ohmic contact; wherein the second preset annealing condition can be selected to be set as: annealing temperature 1000℃, annealing time 2 minutes.

[0102] S6, the cathode 9 is prepared on the lower surface of the substrate 1.

[0103] In the process of setting the cathode, the nickel metal is deposited on the lower surface of the substrate 1 by using the magnetron sputtering, and then heat annealing is performed under the third preset annealing condition to form a good N-type ohmic contact; wherein the third preset annealing condition can be set as: annealing temperature 950℃, annealing time 15 minutes.

[0104] The thyristor based on the ion implantation type temperature sensor has the advantages of high linearity and sensitivity by adopting the semiconductor device as the temperature sensor; the temperature sensor is integrated into the interior of the thyristor, greatly improves the integration of the thyristor, combines the temperature sensor with the thyristor, and makes the thyristor temperature measurement system more compact and efficient. Meanwhile, the real-time temperature monitoring of the interior of the thyristor is realized, the accuracy and real-time performance of the measurement result are ensured, and a powerful guarantee is provided for the stable operation of the thyristor power electronic system. More importantly, after the temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained.

[0105] It should be noted that the above only describes the preferred embodiments of the present application and is not intended to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An ion implantation type temperature sensor-based thyristor, characterized by, The application relates to a silicon carbide PiN temperature sensor, which comprises a substrate (1), a buffer layer (2), a drift layer (3), a base region (4), a PiN temperature sensor (5), a gate electrode (6), an anode layer (7), an anode (8) and a cathode (9); wherein, the substrate (1), the buffer layer (2), the drift layer (3) and the base region (4) are sequentially arranged from bottom to top; the PiN temperature sensor (5) is arranged in the base region (4) through ion implantation; the PiN temperature sensor (5) is a lateral PiN temperature sensor with an isolation region; the PiN temperature sensor (5) comprises a P-type isolation region (51), an N-type i region (52), a P region (53), an N region (54), a sensor anode (55), a sensor cathode (56) and an isolation electrode (57); wherein, the P-type isolation region (51) is formed through ion implantation and has a concave shape; the N-type i region (52) is formed through ion implantation and is arranged in a groove of the P-type isolation region (51); the P region (53) is arranged in the N-type i region (52) and is located at one end of the P-type isolation region (51); the N region (54) is arranged in the N-type i region (52) and is located at the other end of the P-type isolation region (51); the sensor anode (55) is arranged on the upper surface of the P region (53); the sensor cathode (56) is arranged on the upper surface of the N region (54); and the isolation electrode (57) is arranged at both ends of the P-type isolation region (51). The gate electrode (6) is arranged at both ends of the base region (4). The anode layer (7) is arranged on the upper surface of the base region (4) and in the region between the PiN temperature sensor (5) and the gate electrode (6). The anode (8) is arranged on the upper surface of the anode layer (7). The cathode (9) is arranged on the lower surface of the substrate (1). The application also relates to a preparation method of the silicon carbide PiN temperature sensor. The substrate (1) is selected, epitaxial growth and multilayer ion implantation are carried out on the substrate (1), a buffer layer (2), a drift layer (3), a base region (4) and a silicon carbide P-type anode layer are obtained; The silicon carbide P-type anode layer is etched, and two anode layers (7) are formed in the upper surface of the base region (4) in a partial region; and 2. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The material of the substrate (1) comprises silicon carbide; the doping type of the substrate (1) is N-type heavy doping, the doping concentration is 1 x 10 18 -5 x 10 19 cm -3 .

3. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The material of the buffer layer (2) includes silicon carbide with a thickness of 1-3 μm. The buffer layer (2) is P-type lightly doped with a doping concentration of 2.2 x 1014 cm-3. 17 -4 x 1014 18 cm -3 .

4. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The material of the drift layer (3) comprises silicon carbide with a thickness of 20-40 μm. The drift layer (3) is P-type lightly doped with a doping concentration of 1 x 1014-5 x 1015 cm"3. 15 -5 x 1015 cm"3. 15 cm -3 .

5. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The material of the base region (4) comprises silicon carbide with a thickness of 4-6 μm. The base region (4) is N-type lightly doped with a doping concentration of 1 x 1016 cm-3. 17 - 3 x 1018 cm-3. 17 cm -3 .

6. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The concentration distribution of the P-type isolation region (51) is Gaussian distribution, the peak concentration ranges from 5*10 18 cm -3 -2*10 19 cm -3 , and the injection depth is 0.5-2 μm.

7. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The concentration distribution of the N-type i region (52) is Gaussian distribution, the peak concentration ranges from 1 x 1018 to 5 x 1018 cm-3 18 cm -3 -5 x 1018 cm-3 18 cm -3 , and the injection depth is 0.2-1 μm.

8. A thyristor based on an ion implantation type temperature sensor according to claim 1, characterized in that, The material of the anode layer (7) comprises silicon carbide with a thickness of 1-3 μm. The anode layer (7) is P-type heavily doped with a doping concentration of 5 x 1019cm-3. 18 -1 x 1019cm-3 20 cm -3 .

9. A method of manufacturing a thyristor based on an ion implantation type temperature sensor, characterized by, ​ ​ ​ The gate region (61) is formed by ion implantation at both ends of the base region (4); the P-type isolation region (51) is formed by ion implantation in the partial region of the base region between the two anode layers; the N-type i region (52) is formed by ion implantation in the partial region of the P-type isolation region (51); the P region (53) and the N region (54) are formed respectively in the partial region of the N-type i region (52) near both ends of the P-type isolation region (51), and the corresponding ohmic contact is formed; the sensor anode (55) is prepared on the upper surface of the P region (53), the sensor cathode (56) is prepared on the upper surface of the N region (54), and the isolation electrode (57) is prepared at both ends of the P-type isolation region (51); the P-type isolation region (51), the N-type i region (52), the P region (53), the N region (54), the sensor anode (55), the sensor cathode (56) and the isolation electrode (57) constitute the PiN temperature sensor (5); The gate (62) is arranged at both ends of the gate region (61), and the gate region (61) and the gate (62) constitute the gate electrode (6); The anode (8) is prepared on the upper surface of the anode layer (7); The cathode (9) is prepared on the lower surface of the substrate (1).

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