Miniature high-precision ceramic film resistance-capacitance dual-function element and manufacturing method thereof

Abstract

The invention discloses a miniature high-precision ceramic thin film resistance-capacitance dual-function element and a manufacturing method thereof, and relates to the technical field of integrated electronic elements, and the resistance-capacitance dual-function element is characterized in that a TaN thin film, a TiW thin film and an Au thin film are sequentially deposited on a grain boundary layer dielectric ceramic substrate through a magnetron vacuum sputtering technology; the required TaN thin film is reserved through etching to serve as a resistive film, the sheet resistance value of the resistive film is accurately adjusted in combination with a heat treatment process, and finally a resistance-capacitance integrated refined substrate is formed; a single resistor-capacitor element is obtained through a cutting-up process, and the accurate adjustment of the electrostatic capacity is realized by controlling the thickness of a cutting-up blade; the single resistance-capacitance element has the characteristics of high-precision resistance value and capacitance, small size, low parasitic parameter and high reliability, and can be widely applied to microwave communication, radio frequency modules and other high-performance electronic circuits; the problems of large circuit size and multiple parasitic parameters caused by the fact that the existing resistor and capacitor are installed in a circuit in a discrete combination manner are solved.

Description

Technical Field

[0001] The invention relates to the technical field of integrated electronic components, and in particular to a miniature high-precision ceramic thin film resistor-capacitor dual-function component and a manufacturing method thereof. Background Art

[0002] In the development of modern electronic technology, circuit integration and miniaturization have become important trends. Traditionally, functions such as electrostatic protection, signal isolation, and signal attenuation are usually achieved through a combination of discrete resistors and capacitors. However, as electronic products develop towards thinness, compactness, and high performance, this approach has gradually exposed the following problems:

[0003] 1. Large space occupation: The layout of discrete components on the circuit board requires separate mounting positions to be reserved, which increases the area of ​​the circuit board; for smartphones, wearable devices, medical electronics and other miniaturized products, this layout limits the compactness of the design.

[0004] 2. Complex component connections: Discrete resistors and capacitors require multiple soldering points and connection paths, which increases the complexity of circuit design. This not only reduces manufacturing efficiency, but also easily leads to circuit failure due to poor connections or solder joint failure, which in turn causes product quality problems.

[0005] 3. Influence of parasitic parameters: The connection of multiple discrete components will introduce more parasitic inductance and capacitance, resulting in signal distortion, delay or interference, especially in high-frequency circuits. This situation poses considerable challenges to RF communications, microwave circuits and high-speed digital signal processing.

[0006] 4. Reliability and cost issues: Discrete components require more manufacturing and assembly steps, which increases production costs. In addition, due to the large number of connection points, the long-term reliability of the circuit is reduced, and the possibility of maintenance and rework is increased, resulting in low product production yield.

[0007] Therefore, the originally discrete resistors and capacitors are integrated into one electronic component, and their resistance parameters and capacitance parameters can be precisely adjusted according to production requirements, thereby simplifying the circuit and improving the volume-performance ratio of the circuit, which will undoubtedly promote the further development of electronic technology.

[0008] In summary, it is found that the prior art has at least the following technical problems:

[0009] In existing circuits, resistors and capacitors are combined in a discrete manner, resulting in large circuit size and many parasitic parameters. Summary of the invention

[0010] The purpose of the present invention is to provide a miniature high-precision ceramic thin film resistor-capacitor dual-function element and a manufacturing method thereof. By magnetron vacuum sputtering technology, TaN film, TiW film and Au film are sequentially deposited on a grain boundary layer dielectric ceramic substrate, and the required TaN film is retained as a resistor film by etching, and then the square resistance of the resistor film is accurately adjusted by dry etching combined with a heat treatment process to finally form a refined substrate; then a single resistor-capacitor element in which a resistor and a capacitor are combined into one is obtained by a dicing process, and the electrostatic capacitance is accurately adjusted by controlling the thickness of the dicing blade; so that the single resistor-capacitor element has the characteristics of high-precision resistance value and capacitance, miniaturization, low parasitic parameters and high reliability, and can be widely used in microwave communication, radio frequency modules and other high-performance electronic circuits; so as to solve the problem that the resistor and capacitor in the existing circuit are discretely combined, resulting in a large circuit volume and many parasitic parameters.

[0011] The various technical effects that can be produced by the preferred technical solutions among the various technical solutions provided by the present invention are described in detail below.

[0012] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0013] The present invention provides a miniature high-precision ceramic thin film resistor-capacitor dual-function element, comprising a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN film, by placing the grain boundary layer dielectric ceramic substrate on a carrier of a magnetron vacuum sputtering machine, and sending it into a receiving chamber of the magnetron vacuum sputtering machine, filling the receiving chamber with a mixed gas, and using the magnetron vacuum sputtering machine to sputter with a Ta target for 5 to 30 minutes, so that a layer of the TaN film is deposited on the surface of the grain boundary layer dielectric ceramic substrate; the thickness of the TaN film increases with the length of the sputtering time, and the thickness of the TaN film is controlled to be 0.1 to 0.6 μm; and a TiW film, by switching the magnetron vacuum sputtering machine to a TiW target, sputtering the surface of the grain boundary layer dielectric ceramic substrate with the TaN film and another surface of the grain boundary layer dielectric ceramic substrate with the TaN film The TiW target is sputtered on the opposite surface of the TaN film and the other opposite surface; and the Au film is switched to the Au target by the magnetron vacuum sputtering machine, and the Au target is sputtered on the surface of the grain boundary layer dielectric ceramic substrate with the TiW film, and a layer of the Au film is deposited on the TiW films on the two opposite surfaces of the grain boundary layer dielectric ceramic substrate, so as to obtain a preliminary substrate; the overall structure of the preliminary substrate from bottom to top is: the Au film-the TiW film-the grain boundary layer dielectric ceramic substrate-the TaN film-the TiW film-the Au film; wherein the TiW film-the Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; a circuit is etched on the preliminary substrate, leaving the TaN film as a resistor film, and the initial square resistance of the resistor film is 20 to 200Ω ， Different initial square resistance values ​​are obtained by controlling the thickness of the TaN film during sputtering; the square resistance value of the resistor film is precisely adjusted through alternating treatments of dry etching and heat treatment and baking, thereby obtaining a refined substrate; the electrodes on both sides and the grain boundary layer dielectric ceramic substrate constitute the capacitor part; the resistor film and the electrodes on the side form a circuit connection to constitute the resistor part; the refined substrate is cut by a dicing machine to form a single resistor and capacitor element that integrates resistors and capacitors; and blades with sizes of 30 to 120 um and various thicknesses are used to precisely adjust the electrostatic capacitance value of the single resistor and capacitor element.

[0014] In one of the embodiments, the mixing ratio of argon and nitrogen in the mixed gas is 1:2.

[0015] In one of the embodiments, the temperature of the heat treatment baking is 300-450° C.; the dry etching and the heat treatment baking are performed alternately for 1-5 times.

[0016] In one embodiment, the alternating treatment of the dry etching and the heat treatment baking adjusts the square resistance of the resistor film within the range of 5-35Ω.

[0017] In one of the embodiments, the electrostatic capacitance value of the single resistor and capacitor element is adjusted within a range of 10% by using blades with various thicknesses ranging from 30 to 120 um.

[0018] A manufacturing method is also provided, comprising the following steps: S1, preparing materials: preparing a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm;

[0019] S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in turn to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate;

[0020] S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside;

[0021] S4, sputter coating the dielectric ceramic substrate of the grain boundary layer in three steps:

[0022] S4.1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 on a carrier of a magnetron vacuum sputtering machine, and send it into a receiving chamber of the magnetron vacuum sputtering machine, and evacuate the receiving chamber to a pressure less than 1.0E-3Pa;

[0023] S4.2, filling the containing chamber with a mixture of argon and nitrogen to make the gas pressure reach 1.0E-2Pa; wherein the ratio of argon to nitrogen is 1:2;

[0024] S4.3. Use Ta to perform target sputtering on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere, and control the sputtering time to be 5min to 30min, so that a layer of TaN film is deposited on the surface of the grain boundary layer dielectric ceramic substrate, and the thickness of the TaN film is controlled to be 0.10 to 0.6um;

[0025] S4.31. When depositing TaN thin film, the magnetron vacuum sputtering machine adopts the movement mode of revolution and rotation for the dielectric ceramic substrate of the grain boundary layer to ensure the uniformity of TaN thin film deposition;

[0026] S4.4, the containing chamber is evacuated again, and then filled with argon gas, and the target is switched to the TiW target by a magnetron vacuum sputtering machine; and then a target sputtering is performed by the magnetron vacuum sputtering machine to deposit a layer of TiW film on the TaN film of the grain boundary layer dielectric ceramic substrate;

[0027] S4.5, switching to the Au target by the magnetron vacuum sputtering machine, performing target sputtering by the magnetron vacuum sputtering machine, and depositing a layer of Au film on the TiW film;

[0028] S5. After the coating step of S4, spin-coat a photosensitive adhesive on the grain boundary layer dielectric ceramic substrate and dry it:

[0029] S5.1, placing the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier of a spin coater, dropping a proper amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, driving the grain boundary layer dielectric ceramic substrate to rotate at a speed of 2000 rpm / min, and evenly coating the photosensitive adhesive on the surface of the grain boundary layer dielectric ceramic substrate to form a layer of photosensitive adhesive film;

[0030] S5.2, transfer the grain boundary layer dielectric ceramic substrate coated with photosensitive adhesive to a drying table at 110°C for 1 minute;

[0031] S6, exposing the grain boundary layer dielectric ceramic substrate coated with the photosensitive adhesive film, and washing away the residual adhesive:

[0032] S6.1, placing the grain boundary layer dielectric ceramic substrate obtained in the glue coating step of S5 on the substrate stage of the exposure machine, and then placing a pre-designed mask template to cover the grain boundary layer dielectric ceramic substrate, exposing the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate;

[0033] S6.2, soaking the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then washing away the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate;

[0034] S7. Wash off two layers of adhesive-free protective patterns on the grain boundary layer dielectric ceramic substrate:

[0035] S7.1, washing the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern;

[0036] S7.2, washing away the TiW film under the Au film without the protective pattern with an oxidizing acid solution, leaving the TaN film as a resistor film;

[0037] S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate:

[0038] S8.1, by controlling the thickness of the TaN film during construction, the initial square resistance of the resistor film is obtained to be 20 to 200Ω;

[0039] S8.2, accurately adjusting the square resistance value of the resistor film by alternately performing dry etching and baking in a temperature range of 300 to 450°C;

[0040] S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element:

[0041] S9.1, placing the grain boundary layer dielectric ceramic substrate obtained in S8 on the carrier of a circular knife water-cooled dicing machine, removing excess material of the grain boundary layer dielectric ceramic substrate by using a blade of predetermined thickness and dicing size indexing, and dicing to form a single resistor and capacitor element;

[0042] S9.2, by using blades of various thicknesses ranging from 30 to 120 um, the capacitance value of the single resistor and capacitor components can be precisely adjusted;

[0043] S9.21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor is within 10%.

[0044] In one of the embodiments, in S4.4: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the TiW target is controlled to be 450S, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

[0045] In one of the embodiments, in S4.5: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the Au target is controlled to be 900S, and the deposition thickness of the Au film is controlled to be 0.4 micrometers.

[0046] In one embodiment, in S5.1: the thickness of the photosensitive adhesive film is controlled to be 7 to 10 microns.

[0047] In one embodiment, the oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

[0048] The beneficial effects of the present invention are as follows:

[0049] The structure and process of the miniature high-precision ceramic thin film resistor-capacitor dual-function element of the present invention have the following significant effects: 1. Component miniaturization: by integrating a resistor film formed by a TaN thin film, a resistor part formed by a TiW thin film-Au thin film as an electrode, and a capacitor part formed by a TiW thin film, an Au thin film and a grain boundary layer dielectric ceramic substrate on the same element, the performance of the resistor and the capacitor are unified, the number of discrete components of the resistor and capacitor required for the circuit and the space occupied are significantly reduced, and the volume proportion of the resistor and capacitor in the circuit is reduced, which helps to meet the needs of modern electronic products for miniaturization and high integration.

[0050] 2. Reduce parasitic parameters: By adopting an integrated design, the electrical components with two kinds of performance, the resistance part and the capacitance part, are combined to form a single resistor and capacitor component, eliminating the welding and connection path between the discrete components of resistance and capacitance, thereby reducing the generation of parasitic parameters and greatly improving the performance stability of high-frequency and microwave circuits.

[0051] 3. High precision and adjustability: The single resistor and capacitor element of the present invention can accurately adjust the square resistance of the resistor film through alternating treatments of dry etching and heat treatment and baking, and adjust the electrostatic capacitance value by cutting, thereby achieving high-precision adjustment and matching of resistor and capacitor parameters to meet the requirements of precision circuits.

[0052] 4. Excellent material properties: Based on the SrTiO3 grain boundary layer dielectric ceramic substrate, it provides the advantage of high dielectric constant (15000~45000), which significantly improves the performance of the capacitor part in the single resistor and capacitor element; at the same time, TaN is used as the resistor film material, so that the resistor part has the performance advantages of low noise, high high temperature stability and high corrosion resistance, ensuring the long-term application reliability of the single resistor and capacitor element.

[0053] 5. Advanced technology: TaN film, TiW film and Au film are deposited in layers through magnetron vacuum sputtering technology, achieving high-quality uniform coverage and precise thickness control of the film, providing technical guarantee for the controllability and consistency of the resistance and capacitance performance of single RC components.

[0054] 6. Simplify assembly and improve reliability: Integrating discrete resistors and capacitors into single resistor and capacitor components reduces the number of welding points of the original discrete resistor and capacitor components in the circuit, reduces the risk of circuit failure due to poor welding and long-term use, and thus improves the reliability of electronic products using single resistor and capacitor components; at the same time, the simplified assembly process of electronic products also reduces production costs.

[0055] 7. Broad application prospects: The single RC element of the present invention has dual functions of resistance and capacitance, and is suitable for microwave communications, radio frequency circuits, 5G equipment, medical electronics and other electronic fields that require high-density and miniaturized design, and has broad market application space. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solution of the present invention, the drawings required for use in the implementation mode will be briefly introduced below. Obviously, the drawings described below are only some implementation modes of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0057] Figure 1 It is a structural schematic diagram of a single resistor and capacitor element of the present invention in which the resistor and capacitor are connected in parallel;

[0058] Figure 2 It is an equivalent circuit diagram of the resistance and capacitance of the single RC element of the present invention connected in parallel;

[0059] Figure 3It is a schematic diagram of the structure of the resistor and capacitor of the single resistor and capacitor element of the present invention connected in series;

[0060] Figure 4 It is an equivalent circuit diagram of the resistance and capacitance of the single resistance and capacitance element of the present invention connected in series.

[0061] The reference numerals are as follows:

[0062] 1. Grain boundary layer dielectric ceramic substrate;

[0063] 2. TaN thin film;

[0064] 3. TiW film;

[0065] 4. Au thin film;

[0066] 5. Electrode;

[0067] 6. Single resistor and capacitor components. DETAILED DESCRIPTION

[0068] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0069] A specific embodiment provides a miniature high-precision ceramic thin film resistor-capacitor dual-function element and a manufacturing method thereof, which effectively solves the problem that the existing circuit uses a discrete combination of resistors and capacitors, resulting in a large circuit size and many parasitic parameters.

[0070] In addition, all the contents of the configurations shown in the following embodiments are not necessarily limited to the solutions of the invention described in the claims.

[0071] The first implementation of a miniature high-precision ceramic thin film resistor-capacitor dual-function component Figure 1 and Figure 2As shown, it includes a grain boundary layer dielectric ceramic substrate 1 made of SrTiO3 as the main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN film 2, by placing the grain boundary layer dielectric ceramic substrate 1 on a carrier of a magnetron vacuum sputtering machine, and sending it into a receiving chamber of the magnetron vacuum sputtering machine, filling the receiving chamber with a mixed gas, and using the magnetron vacuum sputtering machine to sputter with a Ta target for 5 to 30 minutes, so that a layer of TaN film 2 is deposited on the surface of the grain boundary layer dielectric ceramic substrate 1; Ta The thickness of the N film 2 increases with the sputtering time, and the thickness of the TaN film 2 is controlled to be 0.1-0.6μm; and the TiW film 3, which is switched to the TiW target by the magnetron vacuum sputtering machine, and the surface of the grain boundary layer dielectric ceramic substrate 1 with the TaN film 2 and the other opposite surface is subjected to TiW target sputtering, and a layer of TiW film 3 is deposited on the TaN film 2 and the other opposite surface; and the Au film 4, which is switched to the Au target by the magnetron vacuum sputtering machine, and the surface of the grain boundary layer dielectric ceramic substrate 1 with the TiW film 3 is subjected to Au target sputtering. , a layer of Au film 4 is deposited on the TiW film 3 on two opposite sides of the grain boundary layer dielectric ceramic substrate, so as to obtain a primary substrate; the overall structure of the primary substrate from bottom to top is: Au film-TiW film-grain boundary layer dielectric ceramic substrate-TaN film-TiW film-Au film; wherein, the TiW film-Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; a circuit is etched into the primary substrate, leaving the TaN film 2 as a resistor film, and the initial square resistance of the resistor film is 20 to 200Ω, and the sputtering timing is controlled The thickness of the TaN film 2 is made to obtain different initial square resistance values; then, through alternating treatments of dry etching and heat treatment and baking, the square resistance value of the resistor film is accurately adjusted to obtain a refined substrate; the electrodes 5 on both sides and the grain boundary layer dielectric ceramic substrate constitute the capacitor part; the resistor film and the electrode 5 on the side form a circuit connection to constitute the resistor part; the refined substrate is cut by a dicing machine to form a single resistor and capacitor element 6 that combines resistors and capacitors; by using blades with a size of 30 to 120 um and various thicknesses, the electrostatic capacitance value of the single resistor and capacitor element 6 is accurately adjusted.

[0072] Specifically, the above-mentioned Ta target sputtering requires the use of a mixed gas to convert the Ta material into TaN during target sputtering. In order to accurately control the generation of TaN and deposit it on the grain boundary layer dielectric ceramic substrate 1 within the required thickness, it is necessary to control the mixing ratio of argon and nitrogen in the mixed gas to 1:2.

[0073] As one optional implementation,

[0074] Regarding the precise adjustment method of the square resistance value of the resistor film of the above-mentioned single resistor and capacitor element 6, the temperature of the heat treatment baking is 300-450°C; dry etching and heat treatment baking are alternately performed 1-5 times in sequence until the target resistance value is obtained.

[0075] During application, dry etching and heat treatment baking are alternately processed to adjust the square resistance of the resistor film within the range of 5-35Ω, and the adjustment accuracy is 5Ω per unit.

[0076] Regarding the precise control method of the electrostatic capacitance value of the above-mentioned single RC element 6, the electrostatic capacitance value of the single RC element 6 is adjusted within a range of 10% by using blades of various thicknesses ranging from 30 to 120 um.

[0077] The structure and process of the miniature high-precision ceramic thin film resistor-capacitor dual-function element have the following significant effects: 1. Component miniaturization: The resistor film formed by TaN thin film 2, the resistor part formed by TiW thin film-Au thin film as electrodes, and the capacitor part formed by TiW thin film 3, Au thin film 4 and grain boundary layer dielectric ceramic substrate 1 are integrated on the same element, thereby achieving the unification of the performance of resistors and capacitors, significantly reducing the number of discrete components of resistors and capacitors required for the circuit and the space occupied, reducing the volume share of resistors and capacitors in the circuit, and helping to meet the needs of modern electronic products for miniaturization and high integration.

[0078] 2. Reduce parasitic parameters: By adopting an integrated design, the electrical components with two kinds of performance, the resistance part and the capacitance part, are combined to form a single resistor and capacitor element 6, eliminating the welding and connection path between the discrete components of resistance and capacitance, thereby reducing the generation of parasitic parameters and greatly improving the performance stability of high-frequency and microwave circuits.

[0079] 3. High precision and adjustability: The single resistor and capacitor element 6 of the present invention can accurately adjust the square resistance of the resistor film through alternating treatments of dry etching and heat treatment and baking, and adjust the electrostatic capacitance value by cutting, thereby achieving high-precision adjustment and matching of resistance and capacitance parameters to meet the requirements of precision circuits.

[0080] 4. Excellent material properties: Based on the SrTiO3 grain boundary layer dielectric ceramic substrate 1, it provides the advantage of high dielectric constant (15000~45000), which significantly improves the performance of the capacitor part in the single resistor and capacitor element 6; at the same time, TaN is used as the resistor film material, so that the resistor part has the performance advantages of low noise, high high temperature stability and high corrosion resistance, ensuring the long-term application reliability of the single resistor and capacitor element 6.

[0081] 5. Advanced technology: The TaN film 2, TiW film 3 and Au film 4 are deposited in layers by magnetron vacuum sputtering technology, achieving high-quality uniform coverage and precise thickness control of the films, providing technical guarantee for the controllability and consistency of the resistance and capacitance performance of the single resistor and capacitor element 6.

[0082] 6. Simplify assembly and improve reliability: Integrating discrete resistor and capacitor components into a single resistor and capacitor component 6 reduces the number of welding points of the original discrete resistor and capacitor components in the circuit, reduces the risk of circuit failure due to poor welding and long-term use, and thus improves the reliability of electronic products using the single resistor and capacitor component 6; at the same time, the simplified assembly process of electronic products also reduces production costs.

[0083] 7. Broad application prospects: The single RC element 6 of the present invention has dual functions of resistance and capacitance, and is suitable for microwave communications, radio frequency circuits, 5G equipment, medical electronics and other electronic fields that require high-density and miniaturized design, and has broad market application space.

[0084] Based on the above embodiment of the miniature high-precision ceramic thin film resistor-capacitor dual-function element, a manufacturing method is provided, comprising the following steps: S1, material preparation: preparing a grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm;

[0085] S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in turn to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate;

[0086] S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside;

[0087] S4, sputter coating the dielectric ceramic substrate of the grain boundary layer in three steps:

[0088] S4.1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 on a carrier of a magnetron vacuum sputtering machine, and send it into a receiving chamber of the magnetron vacuum sputtering machine, and evacuate the receiving chamber to a pressure less than 1.0E-3Pa;

[0089] S4.2, filling the containing chamber with a mixture of argon and nitrogen to make the gas pressure reach 1.0E-2Pa; wherein the ratio of argon to nitrogen is 1:2;

[0090] S4.3. Use Ta to perform target sputtering on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere, and control the sputtering time to be 5min to 30min, so that a layer of TaN film is deposited on the surface of the grain boundary layer dielectric ceramic substrate, and the thickness of the TaN film is controlled to be 0.10 to 0.6um;

[0091] S4.31. When depositing TaN thin film, the magnetron vacuum sputtering machine adopts the movement mode of revolution and rotation for the dielectric ceramic substrate of the grain boundary layer to ensure the uniformity of TaN thin film deposition;

[0092] S4.4, the containing chamber is evacuated again, and then filled with argon gas, and the target is switched to the TiW target by a magnetron vacuum sputtering machine; and then a target sputtering is performed by the magnetron vacuum sputtering machine to deposit a layer of TiW film on the TaN film of the grain boundary layer dielectric ceramic substrate;

[0093] S4.5, switching to the Au target by the magnetron vacuum sputtering machine, performing target sputtering by the magnetron vacuum sputtering machine, and depositing a layer of Au film on the TiW film;

[0094] S5. After the coating step of S4, spin-coat a photosensitive adhesive on the grain boundary layer dielectric ceramic substrate and dry it:

[0095] S5.1, placing the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier of a spin coater, dropping a proper amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, driving the grain boundary layer dielectric ceramic substrate to rotate at a speed of 2000 rpm / min, and evenly coating the photosensitive adhesive on the surface of the grain boundary layer dielectric ceramic substrate to form a layer of photosensitive adhesive film;

[0096] S5.2, transfer the grain boundary layer dielectric ceramic substrate coated with photosensitive adhesive to a drying table at 110°C for 1 minute;

[0097] S6, exposing the grain boundary layer dielectric ceramic substrate coated with the photosensitive adhesive film, and washing away the residual adhesive:

[0098] S6.1, placing the grain boundary layer dielectric ceramic substrate obtained in the glue coating step of S5 on the substrate stage of the exposure machine, and then placing a pre-designed mask template to cover the grain boundary layer dielectric ceramic substrate, exposing the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate;

[0099] S6.2, soaking the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then washing away the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate;

[0100] S7. Wash off two layers of adhesive-free protective patterns on the grain boundary layer dielectric ceramic substrate:

[0101] S7.1, washing the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern;

[0102] S7.2, washing away the TiW film under the Au film without the protective pattern with an oxidizing acid solution, leaving the TaN film as a resistor film;

[0103] S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate:

[0104] S8.1, controlling the thickness of the TaN film during sputtering to obtain an initial square resistance value of the resistor film in the range of 20 to 200Ω;

[0105] S8.2, accurately adjusting the square resistance value of the resistor film by alternately performing dry etching and baking in a temperature range of 300 to 450°C;

[0106] S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element:

[0107] S9.1, placing the grain boundary layer dielectric ceramic substrate obtained in S8 on the carrier of a circular knife water-cooled dicing machine, removing excess material of the grain boundary layer dielectric ceramic substrate by using a blade of predetermined thickness and dicing size indexing, and dicing to form a single resistor and capacitor element;

[0108] S9.2, by using blades of various thicknesses ranging from 30 to 120 um, the capacitance value of the single resistor and capacitor components can be precisely adjusted;

[0109] S9.21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor is within 10%.

[0110] Among them, for controlling the generation of TiW film, in S4.4: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the TiW target sputtering is controlled to be 450S, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

[0111] For controlling the generation of the Au thin film, in S4.5: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the Au target sputtering is controlled to be 900S, and the deposition thickness of the Au thin film is controlled to be 0.4 micrometers.

[0112] In order to ensure that the pattern on the mask can be accurately and clearly projected onto the thin film on the surface of the grain boundary layer dielectric ceramic substrate during exposure, in S5.1: the thickness of the photosensitive adhesive film is controlled to be 7 to 10 microns.

[0113] For the above-mentioned solution capable of washing away the TiW film and retaining the TaN film as a resistor film without affecting the performance of the TaN film, when applied, the oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

[0114] Based on the micro high-precision ceramic thin film resistor-capacitor dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film resistor-capacitor dual-function element based on the embodiment, experiment 1 was performed:

[0115] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 15000, a length and width of 38 mm, a square shape, and an initial thickness of 0.35 mm was ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0116] (2) The substrate obtained in (1) is placed on the carrier of a magnetron vacuum sputtering machine and sent into the containing chamber of the magnetron vacuum sputtering machine. The containing chamber is evacuated to a pressure less than 1.0E-3Pa. A mixed gas of argon and nitrogen (mixing ratio of 1:2) is filled until the pressure in the containing chamber reaches 1.0E-2Pa. A tantalum (Ta) target is used for sputtering in the atmosphere of the mixed gas for 5 minutes. A tantalum nitride (TaN) film with a thickness of about 0.1 um is deposited on the surface through a sputtering chemical reaction.

[0117] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0118] Switch the Au target to deposit an Au film on the TiW film. Magnetron sputtering uses revolution and rotation to ensure the uniformity of the TaN film.

[0119] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 min.

[0120] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, insert a mask template with preset specifications, expose for 20 seconds, and soak and develop with NaOH solution to remove the glue on the surface of the pattern to be etched.

[0121] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then washed with oxidizing acid solution to remove the TiW layer under the original Au layer of the non-glue protective pattern, leaving the TaN film as the resistor film.

[0122] (6) The initial square resistance of the resistor film is controlled to be 165 ohms. The square resistance of the resistor film is precisely adjusted to 200 ohms by alternating dry etching and baking at 300°C, and the adjustment value is 35Ω.

[0123] (7) The substrate obtained in (6) is placed on the stage of a circular knife water-cooled dicing machine, and the substrate is diced into the first single resistor and capacitor components by using a 35um thick blade and dicing size graduation.

[0124] The electrical performance test results of the first single resistor and capacitor are shown in the following table:

[0125]

[0126] Note: Dielectric constant 15000, initial thickness of substrate T1 = 0.35 mm, mask specification: 0402.

[0127] Based on the micro high-precision ceramic thin film resistor-capacitor dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film resistor-capacitor dual-function element based on the embodiment, experiment 2 was conducted:

[0128] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 30000, a length and width of 38 mm, a square shape, and an initial thickness of 0.20 mm was ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0129] (2) The substrate obtained in (1) is placed on the carrier of a magnetron vacuum sputtering machine and sent into the containing chamber of the magnetron vacuum sputtering machine. The containing chamber is evacuated to a pressure less than 1.0E-3Pa. A mixed gas of argon and nitrogen (mixing ratio of 1:2) is filled until the pressure in the containing chamber reaches 1.0E-2Pa. A tantalum (Ta) target is used for sputtering in the atmosphere of the mixed gas for 15 minutes. A tantalum nitride (TaN) film with a thickness of about 0.3um is deposited on the surface through a sputtering chemical reaction.

[0130] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0131] Switch the Au target to deposit an Au film on the TiW film. Magnetron sputtering uses revolution and rotation to ensure the uniformity of the TaN film.

[0132] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 min.

[0133] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, insert a mask template with the same preset specifications as in Experiment 1, expose for 30 seconds, and soak and develop with NaOH solution to remove the glue on the surface of the pattern to be etched.

[0134] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then washed with oxidizing acid solution to remove the TiW layer under the original Au layer of the non-glue protective pattern, leaving the TaN film as the resistor film.

[0135] (6) The initial square resistance of the resistor film is controlled to be 85 ohms. The square resistance of the resistor film is precisely adjusted to 100 ohms by alternating dry etching and baking at 400°C, and the adjustment value is 15Ω.

[0136] (7) Place the substrate obtained in (6) on the stage of a circular knife water-cooled dicing machine, and cut the substrate into a second single resistor and capacitor element by using a 50um thick blade and a dicing size scale.

[0137] The electrical performance test results of the second single resistor and capacitor are shown in the following table:

[0138]

[0139] Note: Dielectric constant 30000, initial thickness of substrate T2 = thickness 0.20mm, mask specification: 0402.

[0140] Experiment 3 was performed based on the micro high-precision ceramic thin film resistor-capacitor dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film resistor-capacitor dual-function element based on the embodiment:

[0141] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 45000, a length and width of 38 mm, and a thickness of 0.10 mm is ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface, and then dried for use; (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 45000, a length and width of 38 mm, a square shape, and an initial thickness of 0.10 mm is ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0142] (2) The substrate obtained in (1) is placed on a carrier of a magnetron vacuum sputtering machine and sent into a receiving chamber of the magnetron vacuum sputtering machine, and the receiving chamber is evacuated to a pressure less than 1.0E-3Pa; an argon-nitrogen mixed gas (mixing ratio of 1:2) is filled until the pressure in the receiving chamber reaches 1.0E-2Pa, and a tantalum (Ta) target is used for sputtering in an atmosphere of the mixed gas for 30 minutes. A tantalum nitride (TaN) film with a thickness of about 0.6 um is deposited on the surface through a sputtering chemical reaction.

[0143] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0144] Switch the Au target to deposit an Au film on the TiW film. Magnetron sputtering uses revolution and rotation to ensure the uniformity of the TaN film.

[0145] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 min.

[0146] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, insert a mask template with the same preset specifications as in Experiment 1, expose for 40 seconds, and soak and develop with NaOH solution to remove the glue on the surface of the pattern to be etched.

[0147] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then washed with oxidizing acid solution to remove the TiW layer under the original Au layer of the non-glue protective pattern, leaving the TaN film as the resistor film.

[0148] (6) The initial square resistance of the resistor film is controlled to be 15 ohms. The square resistance of the resistor film is precisely adjusted to 20 ohms by alternating dry etching and baking at 450°C, and the adjustment value is 5Ω.

[0149] (7) The substrate obtained in (6) is placed on the stage of a circular knife water-cooled dicing machine, and the substrate is diced into a third monomer resistor and capacitor component by using a 120um thick blade and a dicing size division.

[0150] The electrical performance test results of the third single resistor and capacitor are shown in the following table:

[0151]

[0152] Note: Dielectric constant 45000, initial thickness of substrate T3 = 0.10 mm, mask specification: 0402.

[0153] It can be seen from the above three experiments that in a single RC component, the value of the electrostatic capacitance Cp of the capacitor part is affected by the blade thickness and the dicing size division used by the circular knife water-cooled dicing machine, that is, the electrostatic capacitance of the single RC component can be adjusted by controlling the blade thickness and the dicing size division used, and in the blade size range of 30 to 120 um and the dicing size division, the larger the blade thickness and the dicing size division used, the higher the retained electrostatic capacitance value; and by adopting blades of different sizes and dicing size divisions, the value of the insulation IR can also be adjusted, and the larger the blade thickness and the dicing size division used, the lower the retained insulation IR value.

[0154] The resistance value (resistance value) of the resistor film of the resistor part in the single resistor and capacitor element is affected by the temperature of the alternating treatment of dry etching and heat treatment baking. In the temperature range of 300-450℃, the resistance value will be adjusted higher, and the higher the temperature, the smaller the adjusted resistance value, and the smaller the increase in resistance value.

[0155] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described.

Claims

1. A miniature high-precision ceramic thin film resistor-capacitor dual-function element, characterized in that: It includes a grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN film, by placing the grain boundary layer dielectric ceramic substrate on a carrier of a magnetron vacuum sputtering machine, and sending it into a receiving chamber of the magnetron vacuum sputtering machine, filling the receiving chamber with a mixed gas, and using the magnetron vacuum sputtering machine to sputter with a Ta target for 5-30 minutes to deposit a layer of the TaN film on the surface of the grain boundary layer dielectric ceramic substrate; The thickness of the TaN film increases with the sputtering time, and the thickness of the TaN film is controlled to be 0.1-0.6 μm; and a TiW film, switching the magnetron vacuum sputtering machine to a TiW target, sputtering the TiW target on the surface of the grain boundary layer dielectric ceramic substrate with the TaN film and another opposite surface, and depositing a layer of the TiW film on the TaN film and another opposite surface; and Au thin film, switching to Au target by the magnetron vacuum sputtering machine, sputtering the Au target on the surface of the grain boundary layer dielectric ceramic substrate with the TiW thin film, depositing a layer of the Au thin film on the TiW thin films on two opposite surfaces of the grain boundary layer dielectric ceramic substrate, thereby obtaining a primary substrate; The overall structure of the primary substrate from bottom to top is: the Au film-the TiW film-the grain boundary layer dielectric ceramic substrate-the TaN film-the TiW film-the Au film; wherein the TiW film-the Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; Etching a circuit onto the primary substrate, leaving the TaN film as a resistor film, and making the initial square resistance of the resistor film between 20 and 200 Ω ， Different initial square resistance values ​​are obtained by controlling the thickness of the TaN film during sputtering; Then, the square resistance value of the resistor film is precisely adjusted by alternately performing dry etching and heat treatment and baking, thereby obtaining a refined substrate; The electrodes on both sides and the grain boundary layer dielectric ceramic substrate constitute a capacitor part; the resistor film forms a circuit connection with the electrodes on the side to constitute a resistor part; The refined substrate is cut by a dicing machine to form a single resistor and capacitor element integrating resistors and capacitors; blades with various thicknesses ranging from 30 to 120 um are used to accurately adjust the electrostatic capacitance value of the single resistor and capacitor element.

2. The miniature high-precision ceramic thin film resistor-capacitor dual-function element according to claim 1 is characterized in that: The mixing ratio of argon and nitrogen in the mixed gas is 1:

2.

3. The miniature high-precision ceramic thin film resistor-capacitor dual-function element according to claim 1 is characterized in that: The temperature of the heat treatment baking is 300-450°C; The dry etching and the heat treatment baking are performed alternately 1 to 5 times.

4. The miniature high-precision ceramic thin film resistor-capacitor dual-function element according to claim 3 is characterized in that: The dry etching and the heat treatment and baking are alternately processed to adjust the square resistance of the resistor film within the range of 5-35Ω.

5. The miniature high-precision ceramic thin film resistor-capacitor dual-function element according to claim 1, characterized in that: By using blades with various thicknesses ranging from 30 to 120 μm, the electrostatic capacitance value of the single resistor and capacitor element can be adjusted within a range of 10%.

6. A method for manufacturing a micro high-precision ceramic thin film resistor-capacitor dual-function element according to claim 1, characterized in that: The following steps are involved: S1. Material preparation: prepare a grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in turn to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate; S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside; S4, sputter coating the dielectric ceramic substrate of the grain boundary layer in three steps: S4.

1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 on a carrier of a magnetron vacuum sputtering machine, and send it into a receiving chamber of the magnetron vacuum sputtering machine, and evacuate the receiving chamber to a pressure less than 1.0E-3Pa; S4.2, filling the containing chamber with a mixture of argon and nitrogen to make the gas pressure reach 1.0E-2Pa; wherein the ratio of argon to nitrogen is 1:2; S4.

3. Use Ta to perform target sputtering on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere, and control the sputtering time to be 5min to 30min, so that a layer of TaN film is deposited on the surface of the grain boundary layer dielectric ceramic substrate, and the thickness of the TaN film is controlled to be 0.10 to 0.6um; S4.

31. When depositing TaN thin film, the magnetron vacuum sputtering machine adopts the movement mode of revolution and rotation for the dielectric ceramic substrate of the grain boundary layer to ensure the uniformity of TaN thin film deposition; S4.4, the containing chamber is evacuated again, and then filled with argon gas, and the target is switched to the TiW target by a magnetron vacuum sputtering machine; and then a target sputtering is performed by the magnetron vacuum sputtering machine to deposit a layer of TiW film on the TaN film of the grain boundary layer dielectric ceramic substrate; S4.5, switching to the Au target by the magnetron vacuum sputtering machine, performing target sputtering by the magnetron vacuum sputtering machine, and depositing a layer of Au film on the TiW film; S5. After the coating step of S4, spin-coat a photosensitive adhesive on the grain boundary layer dielectric ceramic substrate and dry it: S5.1, placing the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier of a spin coater, dropping a proper amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, driving the grain boundary layer dielectric ceramic substrate to rotate at a speed of 2000 rpm / min, and evenly coating the photosensitive adhesive on the surface of the grain boundary layer dielectric ceramic substrate to form a layer of photosensitive adhesive film; S5.2, transfer the grain boundary layer dielectric ceramic substrate coated with photosensitive adhesive to a drying table at 110°C for 1 minute; S6, exposing the grain boundary layer dielectric ceramic substrate coated with the photosensitive adhesive film, and washing away the residual adhesive: S6.1, placing the grain boundary layer dielectric ceramic substrate obtained in the glue coating step of S5 on the substrate stage of the exposure machine, and then placing a pre-designed mask template to cover the grain boundary layer dielectric ceramic substrate, exposing the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate; S6.2, soaking the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then washing away the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate; S7. Wash off two layers of adhesive-free protective patterns on the grain boundary layer dielectric ceramic substrate: S7.1, washing the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern; S7.2, washing away the TiW film under the Au film without the protective pattern with an oxidizing acid solution, leaving the TaN film as a resistor film; S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate: S8.1, controlling the thickness of the TaN film during sputtering to obtain an initial square resistance value of the resistor film in the range of 20 to 200Ω; S8.2, accurately adjusting the square resistance value of the resistor film by alternately performing dry etching and baking in a temperature range of 300 to 450°C; S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element: S9.1, placing the grain boundary layer dielectric ceramic substrate obtained in S8 on the carrier of a circular knife water-cooled dicing machine, removing excess material of the grain boundary layer dielectric ceramic substrate by using a blade of predetermined thickness and dicing size indexing, and dicing to form a single resistor and capacitor element; S9.2, by using blades of various thicknesses ranging from 30 to 120 um, the capacitance value of the single resistor and capacitor components can be precisely adjusted; S9.

21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor is within 10%.

7. The manufacturing method according to claim 6, characterized in that: In S4.4: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the TiW target is controlled to be 450S, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

8. The manufacturing method according to claim 6, characterized in that: In S4.5: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the Au target is controlled to be 900S, and the deposition thickness of the Au film is controlled to be 0.4 micrometers.

9. The manufacturing method according to claim 6, characterized in that: In S5.1: the thickness of the photosensitive adhesive film is controlled to be 7 to 10 microns.

10. The manufacturing method according to claim 6, characterized in that: The oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

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