Light emitting device and display panel

Abstract

The invention discloses a light-emitting device and a display panel, the light-emitting device comprises a light-emitting part, a first electrode and a second electrode, and the light-emitting part comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; the first electrode is connected with the first semiconductor layer; the second electrode is connected with the second semiconductor layer; in a plane view of the light-emitting device, the patterns of the light-emitting layer are centrosymmetric patterns. The light-emitting efficiency of the light-emitting device can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device and a display panel. Background Art

[0002] Micro light emitting diodes have the advantages of high brightness, high transmittance and high contrast, and are increasingly valued by people. Traditional micro light emitting diodes usually include a first semiconductor layer, a light emitting layer, a second semiconductor layer, a first electrode and a second electrode, and the light emitting layer and the second semiconductor layer are sequentially stacked on one side of the first semiconductor layer.

[0003] In order to facilitate the subsequent binding of the light-emitting device to the substrate, the first electrode and the light-emitting layer are arranged on the same side of the first semiconductor layer. Since the first electrode and the light-emitting layer are arranged on the same side, the first electrode occupies the setting space of the light-emitting layer. When the light-emitting device emits light, the light output brightness of the side of the light-emitting device where the first electrode is arranged is low, and the light output brightness of the side of the light-emitting device where the second electrode is arranged is high, which makes the light output of the light-emitting device asymmetric, affecting the display effect of the light-emitting device.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a light-emitting device and a display panel to improve the display effect of the light-emitting device.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, the present application provides a light emitting device, comprising:

[0008] A light emitting portion, the light emitting portion comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer which are stacked;

[0009] a first electrode connected to the first semiconductor layer; and

[0010] a second electrode connected to the second semiconductor layer;

[0011] In a plan view of the light emitting device, the pattern of the light emitting layer is a centrally symmetrical pattern.

[0012] In one embodiment of the present application, an opening is provided in the thickness direction of the light-emitting layer, the opening penetrates the light-emitting layer, and the light-emitting layer is provided around the opening;

[0013] In a plan view of the light emitting device, the pattern of the openings is a pattern symmetrical about the center point.

[0014] In one embodiment of the present application, the light emitting device further includes:

[0015] a first connection portion connected to the first semiconductor layer, the first electrode being disposed on the first connection portion, and the first electrode being electrically connected to the first semiconductor layer through the first connection portion; and

[0016] The second connection portion is connected to the second semiconductor layer. The second electrode is arranged on the second connection portion. The second electrode is electrically connected to the second semiconductor layer through the second connection portion.

[0017] In one embodiment of the present application, the opening also penetrates the first semiconductor layer and the second semiconductor layer;

[0018] The first connecting portion is disposed in the opening;

[0019] The second connecting portion is disposed in the opening and is spaced apart from the first connecting portion;

[0020] The first electrode and the second electrode are both located on the same side of the first semiconductor layer.

[0021] In one embodiment of the present application, the material of the first connecting portion is the same as the material of the first semiconductor layer;

[0022] The second connecting portion comprises:

[0023] A first sub-portion, connected to a side of the first semiconductor layer close to the opening, the first sub-portion being spaced apart from the first connecting portion;

[0024] a second sub-section connected to a side of the light-emitting layer close to the opening, the second sub-section being stacked with the first sub-section; and

[0025] a third sub-portion connected to a side of the second semiconductor layer close to the opening, the third sub-portion being located on a side of the second sub-portion away from the first sub-portion, and a side of the third sub-portion away from the second sub-portion being connected to the second electrode, and a material of the third sub-portion being the same as that of the second semiconductor layer;

[0026] The material of the first sub-section is the same as that of the first semiconductor layer, and the material of the second sub-section is different from that of the light-emitting layer; or

[0027] The material of the first sub-portion is different from that of the first semiconductor layer, and the material of the second sub-portion is the same as that of the light emitting layer.

[0028] In one embodiment of the present application, the opening also penetrates the second semiconductor layer and ends at the first semiconductor layer, and the first electrode is disposed at a portion of the first semiconductor layer exposed to the opening;

[0029] The light emitting device further comprises a second connecting portion connected to the second semiconductor layer, the second electrode is arranged on the second connecting portion, and the second electrode is electrically connected to the second semiconductor layer through the second connecting portion;

[0030] The second connection portion is stacked on a side of the first semiconductor layer close to the second semiconductor layer and connected to a side of the second semiconductor layer close to the opening, and the second electrode is disposed on a side of the second connection portion away from the first semiconductor layer.

[0031] In one embodiment of the present application, the second connecting portion includes:

[0032] A second sub-section connected to a side of the light-emitting layer close to the opening; and

[0033] a third sub-portion connected to a side of the second semiconductor layer close to the opening, the third sub-portion being located on a side of the second sub-portion away from the first semiconductor layer, and a side of the third sub-portion away from the second sub-portion being connected to the second electrode, and a material of the third sub-portion being the same as that of the second semiconductor layer;

[0034] The material of the second sub-section is different from the material of the light-emitting layer.

[0035] In an embodiment of the present application, in a plan view of the light-emitting device, the pattern of the light-emitting device has a center line, and the pattern of the light-emitting layer is a pattern symmetrical about the center line.

[0036] In an embodiment of the present application, in a plan view of the light-emitting device, an area of ​​the light-emitting layer is larger than an area of ​​the opening.

[0037] In the second aspect, the present application proposes a display panel, including a light-emitting device, wherein the light-emitting device includes a light-emitting portion, a first electrode and a second electrode, the light-emitting portion includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are stacked; the first electrode is connected to the first semiconductor layer; the second electrode is connected to the second semiconductor layer; in a plan view of the light-emitting device, the pattern of the light-emitting layer has a center point, and the pattern of the light-emitting layer is a pattern symmetrical about the center point.

[0038] In one embodiment of the present application, the display panel further includes:

[0039] A substrate, wherein the plurality of light emitting devices are arranged on one side of the substrate;

[0040] An encapsulation layer, disposed on one side of the substrate and covering the plurality of light-emitting devices;

[0041] A plurality of lenses are arranged on a side of the packaging layer away from the substrate, one lens is arranged corresponding to one light-emitting device, and the projection center point of the orthographic projection of the lens on the substrate coincides with the symmetry center of the orthographic projection of the corresponding light-emitting layer on the substrate.

[0042] In the present application, the light-emitting device has a center point in its plan view. By making the pattern of the light-emitting layer symmetrical about the center point of the light-emitting device, the light output of the light-emitting device is made symmetrical, thereby solving the problem of asymmetric light output of traditional light-emitting devices and improving the display effect of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a schematic diagram of a conventional light emitting device;

[0044] Figure 2 yes Figure 1 A plan view of the light emitting device shown;

[0045] Figure 3 is a schematic diagram of a display panel of the present application;

[0046] Figure 4 is a schematic diagram of the light emitting device and lens of the present application;

[0047] Figure 5 is a plan view of an embodiment of a light emitting device of the present application;

[0048] Figure 6 is a plan view of another embodiment of the light emitting device of the present application;

[0049] Figure 7 yes Figure 6 A cross-sectional view of the light-emitting device of the present application taken along the AA' section line;

[0050] Figure 8 is a graph showing the relationship between normalized brightness and viewing angle for the experimental group and the control group in this application;

[0051] Fig. 9 is a plan view of another embodiment of the light emitting device of the present application;

[0052] Fig.10 yes Fig. 9 A cross-sectional view of the light-emitting device of the present application taken along the BB' cross-sectional line;

[0053] Fig.11 is a schematic diagram of a first embodiment of a light emitting device of the present application;

[0054] Fig.12 yes Fig.11 A first cross-sectional view of the light-emitting device of the present application taken along the CC' cross-sectional line is shown;

[0055] Fig.13 yes Fig.11 A second cross-sectional view of the light-emitting device of the present application taken along the CC' cross-sectional line is shown;

[0056] Fig.14 yes Fig.11 A third cross-sectional view of the light-emitting device of the present application taken along the CC' cross-sectional line is shown;

[0057] Fig.15 yes Fig.11 A fourth cross-sectional view of the light-emitting device of the present application taken along the CC' cross-sectional line is shown;

[0058] Fig.16 is a schematic diagram of a second embodiment of a light emitting device of the present application;

[0059] Fig.17 yes Fig.16 A first cross-sectional view of the light-emitting device of the present application taken along the DD' cross-sectional line is shown;

[0060] Fig.18 yes Fig.16 A second cross-sectional view along the DD' cross-sectional line of the light-emitting device of the present application is shown. DETAILED DESCRIPTION

[0061] The meanings of the terms used in this specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which this application belongs. The terms used in this specification and claims are only for the purpose of facilitating the description and understanding of this application, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0062] See also Figure 1 The conventional light emitting device 100a includes a first semiconductor layer 11a, a light emitting layer 12a, a second semiconductor layer 13a, a first electrode 20a, and a second electrode 30a. The light emitting layer 12a and the second semiconductor layer 13a are sequentially stacked on one side of the first semiconductor layer 11a. In order to facilitate the subsequent bonding of the conventional light emitting device 100a to the substrate, the first electrode 20a and the light emitting layer 12a are disposed on the same side of the first semiconductor layer 11a.

[0063] See also Figure 2In the plan view of the conventional light-emitting device 100a, the conventional light-emitting device 100a has a center line CL'. Since the first electrode 20a and the light-emitting layer 12a are arranged on the same side, the first electrode 20a occupies the arrangement space of the light-emitting layer 12a close to the first electrode 20a, so that the light-emitting layer 12a cannot be symmetrical about the center line CL' of the conventional light-emitting device 100a. When the conventional light-emitting device 100a emits light, the side of the conventional light-emitting device 100a where the first electrode 20a is arranged has low light brightness, and the side of the conventional light-emitting device 100a where the second electrode 30a is arranged has high light brightness. The light output of the conventional light-emitting device 100a is asymmetric on the left and right, which affects the display effect of the conventional light-emitting device 100a.

[0064] The present application proposes a display device, which may be a mobile phone, a tablet computer, an e-reader, an electronic display screen, a laptop computer, a mobile phone, an augmented reality (AR) or virtual reality (VR) device, a media player, a wearable device, a digital camera, a car navigation system, etc. The display device includes a display panel 1000 .

[0065] Optionally, the display panel 1000 may be a micro light emitting diode (Micro Light Emitting Diode, Micro LED) display panel 1000 , or the display panel 1000 may be a sub-millimeter light emitting diode (Mini Light Emitting Diode, Mini LED) display panel 1000 .

[0066] Optionally, the display panel 1000 is a micro light emitting diode display panel 1000. The micro light emitting diode display panel 1000 is a direct display panel 1000. Compared with the liquid crystal display panel 1000, the micro light emitting diode display panel 1000 has a higher contrast ratio. The embodiment of the present application is described by taking the micro light emitting diode display panel 1000 as an example.

[0067] Optional, see Figure 3 The display panel 1000 includes a substrate 200, a plurality of light emitting devices 100, an encapsulation layer 300 and a light extraction structure 400. The plurality of light emitting devices 100 are disposed on one side of the substrate 200. The encapsulation layer 300 is disposed on one side of the substrate 200 and covers the plurality of light emitting devices 100.

[0068] Optionally, the light emitting device 100 includes a red light emitting device 100, a green light emitting device 100, and a blue light emitting device 100, and three adjacent light emitting devices 100 with different light colors form a light emitting unit 500. In the display panel 1000, each light emitting device 100 is a sub-pixel, and three adjacent sub-pixels of different colors form a light emitting unit 500, and the light emitting unit 500 is a pixel.

[0069] Optionally, the light extraction structure 400 includes a plurality of lenses 410. The plurality of lenses 410 are disposed on a side of the encapsulation layer 300 away from the substrate 200, and one light extraction structure 400 is disposed corresponding to one light emitting unit 500. The design of the light extraction structure 400 can improve the front light emitting efficiency of the light emitting unit 500, thereby improving the display effect. At the same time, the design of one light extraction structure 400 corresponding to one light emitting unit 500 can ensure that each light emitting unit 500 has good symmetry in the upper, lower, left and right viewing angles in the overall optical design of the display panel 1000, which helps to achieve a wide viewing angle specification design, improves the light output symmetry of each light emitting unit 500, and thus improves the display effect.

[0070] Optionally, the light extraction structure 400 includes three lenses 410, see Figure 4 , one lens 410 is provided corresponding to one light emitting device 100. The projection center point of the orthographic projection of the lens 410 on the substrate 200 coincides with the symmetry center of the orthographic projection of the corresponding light emitting layer 12 on the substrate 200. In this embodiment, one lens 410 is designed to correspond to one sub-pixel, which can ensure that each light emitting unit 500 has good symmetry in the upper, lower, left and right viewing angles in the overall optical design of the display panel 1000, which helps to achieve a wide viewing angle specification design, improve the light symmetry of each light emitting device 100, and thus improve the display effect.

[0071] Optional, see Figure 5 The present application proposes a light-emitting device 100, comprising a light-emitting portion 10, a first electrode 20 and a second electrode 30. The light-emitting portion 10 comprises a first semiconductor layer 11, a light-emitting layer 12 and a second semiconductor layer 13 which are stacked. The first electrode 20 is connected to the first semiconductor layer 11, and the second electrode 30 is connected to the second semiconductor layer 13. In a plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 is a centrally symmetrical pattern.

[0072] Optionally, the pattern of the light emitting layer 12 has a center point CP, and the pattern of the light emitting layer 12 is a central symmetric pattern that is symmetric about the center point CP.

[0073] See also Figure 5In the present embodiment, the light emitting layer 12 has a center point CP in the plan view of the light emitting device 100. By making the pattern of the light emitting layer 12 symmetrical about the center point CP, the light emission of the light emitting device 100 is made symmetrical, thereby solving the problem of asymmetric light emission of the traditional light emitting device 100a and improving the display effect of the light emitting device 100.

[0074] Optional, see Figure 6 In a plan view of the light emitting device 100 , the pattern of the light emitting layer 12 has a center line CL, and the pattern of the light emitting layer 12 is a pattern symmetrical about the center line CL.

[0075] In this embodiment, the pattern of the light-emitting layer 12 in the plan view of the light-emitting device 100 is both an axially symmetrical pattern and a centrally symmetrical pattern, so that the light-emitting device 100 has more symmetrical light emission at the four sides corresponding to the center point CP, solves the problem of asymmetric light emission at the four sides of the traditional light-emitting device 100a, and improves the display effect.

[0076] Optionally, in the plan view of the light-emitting device 100 , the pattern of the light-emitting layer 12 is one of the shapes that are both axially symmetrical and centrally symmetrical, such as a circle, a rectangle, a square, a rhombus, a regular polygon, etc.

[0077] Optional, see Figure 7 An opening 40 is provided in the thickness direction of the light emitting layer 12, the opening 40 penetrates the light emitting layer 12, and the light emitting layer 12 is arranged around the opening 40. In the plan view of the light emitting device 100, the pattern of the opening 40 is a symmetrical pattern about the center point CP.

[0078] In this embodiment, an opening 40 is set in the light-emitting layer 12, and the first electrode 20 and the second electrode 30 can be set in the opening 40, and the first electrode 20 and the second electrode 30 can also be set on the periphery of the light-emitting portion 10, so as to avoid the first electrode 20 or the second electrode 30 occupying the setting space of the light-emitting layer 12, and by making the pattern of the opening 40 symmetrical about the center point CP of the light-emitting layer 12, the light emitting symmetry of the light-emitting device 100 is further improved, the problem of asymmetric light emission of the traditional light-emitting device 100a is solved, and the display effect of the light-emitting device 100 is further improved.

[0079] In this embodiment, since the pattern of the opening 40 is symmetrical about the center point CP, the light emission of the light emitting device 100 corresponding to the center point CP is more symmetrical, thereby solving the problem of asymmetric light emission of the traditional light emitting device 100a on the four sides, thereby improving the display effect.

[0080] Optional, see Figure 6In the plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 is similar to the pattern of the opening 40, and the pattern of the light-emitting layer 12 and the pattern of the opening 40 are similar figures, so that the light output of the light-emitting device 100 corresponding to the center point CP is more symmetrical, which solves the problem of asymmetric light output on the four sides of the traditional light-emitting device 100a and improves the display effect.

[0081] Optionally, the material of the first semiconductor layer 11 is one of N-type gallium nitride (N-GaN) and P-type gallium nitride (P-GaN), and the second semiconductor layer 13 is the other of N-type gallium nitride and P-type gallium nitride. The subsequent embodiments of the present application are described by taking the material of the first semiconductor layer 11 as N-type gallium nitride and the material of the second semiconductor layer 13 as P-type gallium nitride as an example. In the subsequent embodiments, the first semiconductor layer 11 is used to transport electrons, and the second semiconductor layer 13 is used to transport holes.

[0082] Optionally, the light-emitting layer 12 is a multi-quantum well layer.

[0083] Optionally, the material of the first electrode 20 is an N-pole metal, and the material of the second electrode 30 is a P-pole metal.

[0084] Optional, see Figure 7 In the plan view of the light emitting device 100, the first electrode 20 and the second electrode 30 are located in the opening 40. In this embodiment, under the premise that the size of the opening 40 remains unchanged, the first electrode 20 and the second electrode 30 are arranged in the opening 40, and the light emitting layer 12 can be extended to the outside away from the opening 40 as required, thereby increasing the ratio of the area of ​​the light emitting layer 12 to the area of ​​the opening 40, thereby increasing the amount of light emitted from the front of the light emitting device 100 and improving the display effect of the light emitting device 100.

[0085] Optionally, the light-emitting portion 10 further includes a transparent conductive layer 14. The transparent conductive layer 14 is disposed on a side of the second semiconductor layer 13 away from the light-emitting layer 12. In this embodiment, the second electrode 30 may directly contact the second semiconductor layer 13 to achieve electrical connection between the second electrode 30 and the second semiconductor layer 13. The second electrode 30 may also directly contact the transparent conductive layer 14. Since the transparent conductive layer 14 is in direct contact with the second semiconductor layer 13, the transparent conductive layer 14 acts as a current spreading layer, which can improve the transmission efficiency of the carriers generated by the second electrode 30. In a micro-light-emitting diode, the hole transmission efficiency of the second semiconductor layer 13 is lower than the electron transmission efficiency of the first semiconductor layer 11. The provision of the transparent conductive layer 14 can improve the transmission efficiency of the holes, thereby making the recombination of the holes and electrons in the light-emitting layer 12 more balanced, increasing the number of photons formed by the recombination of the holes and electrons, and thus improving the front luminous efficiency of the light-emitting device 100. The material of the transparent conductive layer 14 includes transparent indium tin oxide (ITO). The opening 40 also penetrates the second semiconductor layer 13 and the transparent conductive layer 14.

[0086] Optionally, the light emitting portion 10 further includes a reflective layer 15 . The reflective layer 15 is disposed on a side of the transparent conductive layer 14 away from the second semiconductor layer 13 . The opening 40 also penetrates the reflective layer 15 .

[0087] Optionally, the reflective layer 15 is a distributed Bragg reflector (DBR) reflective layer 15. The DBR reflective layer 15 reflects the light originally propagating downward back to the top by reflecting the light emitted from the inside of the light emitting device 100, thereby improving the light emission efficiency, which is very important for improving the brightness and efficiency of the light emitting device 100.

[0088] Optionally, the DBR reflective layer 15 is composed of multiple layers of alternating high-refractive index and low-refractive index materials. This periodic structure can achieve high reflectivity within a specific wavelength range, which is very beneficial for improving the luminous brightness of the light-emitting device 100 .

[0089] Optionally, in the plan view of the light emitting device 100, the area of ​​the light emitting layer 12 is larger than the area of ​​the opening 40. Relatively increasing the area of ​​the light emitting layer 12 can increase the amount of light emitted from the front side of each device, thereby improving the display effect.

[0090] Optionally, in the plan view of the light emitting device 100, the ratio of the area of ​​the light emitting layer 12 to the area of ​​the opening 40 is in the range of 1.1 to 20. The ratio of the area of ​​the light emitting layer 12 to the area of ​​the opening 40 is 1.1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, 20.

[0091] In order to further study the improvement of the symmetrical light-emitting performance of the light-emitting device 100 by the symmetrical arrangement of the light-emitting layer 12 and the symmetrical arrangement of the opening 40, Figure 5 The light emitting device 100 of the present application is used as an experimental group. Figure 1 The conventional light emitting device 100a shown in the figure is used as the control group. The same power voltage is input to the experimental group and the control group, and the light output at each viewing angle is normalized to obtain the following: Figure 8 The relationship between normalized brightness and viewing angle of the experimental group and the control group is shown.

[0092] See also Figure 8 From the comparison of the normalized brightness and viewing angle of the experimental group and the control group, it can be seen that in the conventional light-emitting device 100a, the normalized brightness of the side of the conventional light-emitting device 100a with the first electrode 20a is lower, and the normalized brightness of the side of the conventional light-emitting device 100a without the first electrode 20a is higher. The light emission of the conventional light-emitting device 100a is asymmetric, which affects the display effect. In the light-emitting device 100 of the present application, since the light-emitting layer 12 and the opening 40 are symmetrically designed, the normalized brightness of the left and right sides or the upper and lower sides of the light-emitting device 100 of the present application is evenly distributed, symmetrical light emission is achieved, and the display effect is improved.

[0093] Optional, see Fig. 9 In the plan view of the light emitting device 100, the first electrode 20 and the second electrode 30 are located at the periphery of the light emitting portion 10. In this embodiment, the arrangement of the first electrode 20 and the second electrode 30 will not affect the symmetrical light emission of the light emitting layer 12. At the same time, the area of ​​the opening 40 can be relatively reduced, and the area of ​​the light emitting layer 12 can be relatively increased, thereby reducing the proportion of the side wall of the light emitting layer 12 in the surface area of ​​the light emitting layer 12, weakening the side wall light emission of the light emitting layer 12, improving the front light emission efficiency of the light emitting layer 12, and improving the display effect. Please refer to Fig.10 The first electrode 20 is connected to the first semiconductor layer 11 , and the second electrode 30 is connected to the second semiconductor layer 13 .

[0094] In the first embodiment of the present application:

[0095] Optional, see Fig.11 The opening 40 also penetrates the first semiconductor layer 11 and the second semiconductor layer 13 .

[0096] Optional, see Fig.12 , the light emitting device 100 further includes a first connection portion 50 and a second connection portion 60. The first connection portion 50 is connected to the first semiconductor layer 11. The first electrode 20 is disposed on the first connection portion 50. The first electrode 20 is electrically connected to the first semiconductor layer 11 through the first connection portion 50. The second connection portion 60 is connected to the second semiconductor layer 13. The second electrode 30 is disposed on the second connection portion 60. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connection portion 60. The first connection portion 50 is disposed in the opening 40. The second connection portion 60 is disposed in the opening 40 and is spaced apart from the first connection portion 50. Among them, the first electrode 20 and the second electrode 30 are both located on the same side of the first semiconductor layer 11.

[0097] In the first embodiment, in a plan view of the light emitting device 100, the first electrode 20 and the second electrode 30 are disposed in the opening 40, and the first electrode 20 is electrically connected to the first semiconductor layer 11 through the first connecting portion 50. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connecting portion 60. The materials of the first connecting portion 50 and the second connecting portion 60 are conductive materials.

[0098] Optional, see Fig.12 , the thickness of the second connection part 60 is the same as the thickness of the second semiconductor layer 13. The light emitting device 100 further includes a spacer 70, which is stacked on the side of the second connection part 60 away from the second electrode 30, and the spacer 70 is connected to the side of the light emitting layer 12 close to the opening 40 and the side of the first semiconductor layer 11 close to the opening 40. The spacer 70 plays a role in supporting the second connection part 60 and improving the stability of the light emitting device 100. The spacer 70 is spaced apart from the first connection part 50, and the material of the spacer 70 is an insulating material.

[0099] Optionally, the thickness of the second connecting portion 60 is greater than the thickness of the second semiconductor layer 13. Fig.13 The second connecting portion 60 includes a first sub-portion 61, a second sub-portion 62 and a third sub-portion 63. The first sub-portion 61 is connected to a side of the first semiconductor layer 11 close to the opening 40. The first sub-portion 61 is spaced apart from the first connecting portion 50. The second sub-portion 62 is connected to a side of the light emitting layer 12 close to the opening 40. The second sub-portion 62 is stacked with the first sub-portion 61. The third sub-portion 63 is connected to a side of the second semiconductor layer 13 close to the opening 40. The third sub-portion 63 is located on a side of the second sub-portion 62 away from the first sub-portion 61. The side of the third sub-portion 63 away from the second sub-portion 62 is connected to the second electrode 30.

[0100] Optionally, in one embodiment, the material of the third sub-section 63 is a conductive material, and the material of the first sub-section 61 and the material of the second sub-section 62 are insulating materials.

[0101] In this embodiment, the first sub-portion 61 and the second sub-portion 62 play a role in supporting the third sub-portion 63 , thereby improving the structural stability of the light emitting device 100 .

[0102] The first method for manufacturing the light emitting device 100 according to this embodiment includes the following steps:

[0103] S11 : forming a light emitting portion 10 on a substrate 80 , wherein the light emitting portion 10 includes a first semiconductor layer 11 , a light emitting layer 12 , a second semiconductor layer 13 , a transparent conductive layer 14 and a reflective layer 15 which are stacked.

[0104] S12: performing patterning on the light emitting portion 10. In the plan view of the light emitting device 100, the pattern of the light emitting layer 12 has a center point CP, and the pattern of the light emitting layer 12 is a pattern symmetrical about the center point CP.

[0105] S13: Etching the side of the reflective layer 15 away from the transparent conductive layer 14 to form an opening 40, which penetrates the reflective layer 15, the transparent conductive layer 14, the second semiconductor layer 13, the light emitting layer 12 and the first semiconductor layer 11. The opening 40 exposes a portion of the substrate 80. The light emitting layer 12 is disposed around the opening 40.

[0106] S14: forming a first material layer in the opening 40 , the first material layer being connected to a side of the first semiconductor layer 11 close to the opening 40 , and the first material layer being a conductive material. The first material layer is patterned to form a first connecting portion 50 .

[0107] S15: forming a second material layer in the opening 40, the second material layer is connected to the side of the first semiconductor layer 11 close to the opening 40, and the second material layer is an insulating material. The second material layer is patterned to form a first sub-portion 61. The first sub-portion 61 is spaced apart from the first connecting portion 50.

[0108] S16: forming a third material layer in the opening 40, the third material layer is connected to the side of the light emitting layer 12 close to the opening 40, and the third material layer is an insulating material. The third material layer is patterned to form a second sub-section 62. The second sub-section 62 is stacked with the first sub-section 61.

[0109] S17: forming a fourth material layer in the opening 40, the fourth material layer is connected to the side of the second semiconductor layer 13 close to the opening 40, and the fourth material layer is a conductive material. The fourth material layer is patterned to form a third sub-section 63. The third sub-section 63 is disposed on a side of the second sub-section 62 away from the first sub-section 61.

[0110] S18 : Connecting the first electrode 20 to the side of the first connecting portion 50 away from the substrate 80 , and connecting the second electrode 30 to the side of the third sub-portion 63 away from the second sub-portion 62 .

[0111] S19: The substrate 80 is peeled off.

[0112] Optionally, the material of the substrate 80 is glass, sapphire or polyimide.

[0113] Optionally, in another embodiment, see Fig.14 The material of the first connecting portion 50 is the same as that of the first semiconductor layer 11 , and the material of the third sub-portion 63 is the same as that of the second semiconductor layer 13 .

[0114] The material of the first sub-portion 61 is different from that of the first semiconductor layer 11. The material of the second sub-portion 62 is the same as that of the light-emitting layer 12. The material of the first sub-portion 61 is an insulating material, so the overlapped portion of the second sub-portion 62 and the first sub-portion 61 does not emit light.

[0115] In this embodiment, compared with the previous embodiment, in the production process of the light emitting device 100, the steps corresponding to forming the first connecting portion 50, the second sub-portion 62, and the third sub-portion 63 can be reduced, thereby improving production efficiency and reducing production costs.

[0116] It should be understood that in this embodiment, even if the material of the second sub-portion 62 is the same as that of the light-emitting layer 12 , it is not a component of the light-emitting layer 12 , and the pattern of the light-emitting layer 12 in a plan view does not include the second sub-portion 62 .

[0117] Optionally, in another embodiment, see Fig.15 The material of the first connecting portion 50 is the same as that of the first semiconductor layer 11 , and the material of the third sub-portion 63 is the same as that of the second semiconductor layer 13 .

[0118] The material of the first sub-portion 61 is the same as that of the first semiconductor layer 11. The material of the second sub-portion 62 is different from that of the light-emitting layer 12. The material of the second sub-portion 62 does not contain a light-emitting material, so the overlapped portion of the second sub-portion 62 and the first sub-portion 61 does not emit light.

[0119] In this embodiment, during the production process of the light emitting device 100, the steps corresponding to forming the first connecting portion 50, the first sub-portion 61, and the third sub-portion 63 can be reduced, thereby improving production efficiency and reducing production costs.

[0120] In the second embodiment of the present application:

[0121] Optional, see Fig.16The opening 40 also penetrates the second semiconductor layer 13 and ends at the first semiconductor layer 11 . The first electrode 20 is disposed at a portion of the first semiconductor layer 11 exposed to the opening 40 .

[0122] The light emitting device 100 further includes a second connection portion 60. The second connection portion 60 is connected to the second semiconductor layer 13. The second electrode 30 is disposed on the second connection portion 60. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connection portion 60. The second connection portion 60 is stacked and disposed on a side of the first semiconductor layer 11 close to the second semiconductor layer 13, and is connected to a side of the second semiconductor layer 13 close to the opening 40, and the second electrode 30 is disposed on a side of the second connection portion 60 away from the first semiconductor layer 11.

[0123] In the second embodiment, in the plan view of the light emitting device 100, the first electrode 20 and the second electrode 30 are disposed in the opening 40, and the first electrode 20 is in direct contact with the first semiconductor layer 11, so that the first electrode 20 is electrically connected to the first semiconductor layer 11. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connecting portion 60. The material of the second connecting portion 60 is a conductive material. Compared with the first embodiment, the second embodiment saves the patterning process of the first connecting portion 50, improves production efficiency, and reduces production costs.

[0124] Optional, see Fig.17 The second connecting portion 60 includes a second sub-portion 62 and a third sub-portion 63. The second sub-portion 62 is connected to a side of the light emitting layer 12 close to the opening 40. The third sub-portion 63 is connected to a side of the second semiconductor layer 13 close to the opening 40. The third sub-portion 63 is located on a side of the second sub-portion 62 away from the first semiconductor layer 11. The side of the third sub-portion 63 away from the second sub-portion 62 is connected to the second electrode 30.

[0125] Optional, see Fig.17 In one embodiment, the material of the third sub-portion 63 is a conductive material, and the material of the second sub-portion 62 is an insulating material.

[0126] In this embodiment, the second sub-portion 62 plays a role in supporting the third sub-portion 63 , thereby improving the structural stability of the light emitting device 100 .

[0127] The second method for manufacturing the light emitting device 100 according to this embodiment includes the following steps:

[0128] S31 : forming a light emitting portion 10 on a substrate 80 , wherein the light emitting portion 10 includes a first semiconductor layer 11 , a light emitting layer 12 , a second semiconductor layer 13 , a transparent conductive layer 14 and a reflective layer 15 which are stacked.

[0129] S32: performing patterning on the light emitting portion 10. In the plan view of the light emitting device 100, the pattern of the light emitting layer 12 has a center point CP, and the pattern of the light emitting layer 12 is a pattern symmetrical about the center point CP.

[0130] S33: Etching the side of the reflective layer 15 away from the transparent conductive layer 14 to form an opening 40, the opening 40 penetrates the reflective layer 15, the transparent conductive layer 14, the second semiconductor layer 13 and the light emitting layer 12. The opening 40 ends at the first semiconductor layer 11. The opening 40 exposes a portion of the first semiconductor layer 11. The light emitting layer 12 is disposed around the opening 40.

[0131] S34: forming a third material layer in the opening 40, the third material layer is connected to the side of the light emitting layer 12 close to the opening 40, and the third material layer is an insulating material. The third material layer is patterned to form a second sub-section 62. The second sub-section 62 is stacked with the portion of the first semiconductor layer 11 exposed to the opening 40.

[0132] S35: forming a fourth material layer in the opening 40, the fourth material layer is connected to the side of the second semiconductor layer 13 close to the opening 40, and the fourth material layer is a conductive material. The fourth material layer is patterned to form a third sub-section 63. The third sub-section 63 is disposed on a side of the second sub-section 62 away from the first sub-section 61.

[0133] S36 : connecting the first electrode 20 to the side of the portion of the first semiconductor layer 11 exposed to the opening 40 away from the substrate 80 , and connecting the second electrode 30 to the side of the third sub-portion 63 away from the second sub-portion 62 .

[0134] S37: The substrate 80 is peeled off.

[0135] Compared with the first manufacturing method of the light-emitting device 100 of the present application, in the second manufacturing method of the light-emitting device 100 of the present application, the process related to the first connecting part 50 can be reduced, the production efficiency of the light-emitting device 100 can be improved, and the production cost can be reduced.

[0136] Optionally, in another embodiment, see Fig.18 , the material of the second sub-portion 62 is different from the material of the light-emitting layer 12, and the material of the third sub-portion 63 is the same as the material of the second semiconductor layer 13. In this embodiment, compared with the previous embodiment, in the production process of the light-emitting device 100, the process corresponding to forming the third sub-portion 63 can be reduced, the production efficiency is improved, and the production cost is reduced.

[0137] The above is a detailed description of the specific implementation of the present application. The above implementation disclosed in the present application is only the preferred implementation of the present application. For ordinary technicians in this field, many modifications and improvements can be made without departing from the concept of the present application. These modifications and improvements all fall within the scope of protection defined by the claims of the present application.

Claims

1. A light emitting device, characterized in that: include: A light emitting portion, the light emitting portion comprising a first semiconductor layer, a light emitting layer, and a second semiconductor layer which are stacked; a first electrode connected to the first semiconductor layer; as well as a second electrode connected to the second semiconductor layer; In a plan view of the light emitting device, the pattern of the light emitting layer is a centrally symmetrical pattern.

2. The light emitting device according to claim 1, characterized in that: An opening is provided in the thickness direction of the light-emitting layer, the opening penetrates the light-emitting layer, and the light-emitting layer is provided around the opening; In a plan view of the light emitting device, the pattern of the light emitting layer has a center point, the pattern of the light emitting layer is symmetrical about the center point, and the pattern of the opening is a pattern symmetrical about the center point.

3. The light emitting device according to claim 2, characterized in that: The light emitting device further comprises: a first connection portion connected to the first semiconductor layer, the first electrode being disposed on the first connection portion, and the first electrode being electrically connected to the first semiconductor layer through the first connection portion; and The second connection portion is connected to the second semiconductor layer. The second electrode is arranged on the second connection portion. The second electrode is electrically connected to the second semiconductor layer through the second connection portion.

4. The light emitting device according to claim 3, characterized in that: The opening also penetrates the first semiconductor layer and the second semiconductor layer; The first connecting portion is disposed in the opening; The second connecting portion is disposed in the opening and is spaced apart from the first connecting portion; The first electrode and the second electrode are both located on the same side of the first semiconductor layer.

5. The light emitting device according to claim 4, characterized in that: The material of the first connecting portion is the same as that of the first semiconductor layer; The second connecting portion comprises: A first sub-portion, connected to a side of the first semiconductor layer close to the opening, the first sub-portion being spaced apart from the first connecting portion; a second sub-section connected to a side of the light-emitting layer close to the opening, the second sub-section being stacked with the first sub-section; and a third sub-portion connected to a side of the second semiconductor layer close to the opening, the third sub-portion being located on a side of the second sub-portion away from the first sub-portion, and a side of the third sub-portion away from the second sub-portion being connected to the second electrode, and a material of the third sub-portion being the same as that of the second semiconductor layer; The material of the first sub-section is the same as that of the first semiconductor layer, and the material of the second sub-section is different from that of the light-emitting layer; or The material of the first sub-portion is different from that of the first semiconductor layer, and the material of the second sub-portion is the same as that of the light emitting layer.

6. The light emitting device according to claim 2, characterized in that: The opening also penetrates the second semiconductor layer and ends at the first semiconductor layer, and the first electrode is disposed at a portion of the first semiconductor layer exposed to the opening; The light emitting device further comprises a second connecting portion connected to the second semiconductor layer, the second electrode is arranged on the second connecting portion, and the second electrode is electrically connected to the second semiconductor layer through the second connecting portion; The second connection portion is stacked on a side of the first semiconductor layer close to the second semiconductor layer and connected to a side of the second semiconductor layer close to the opening, and the second electrode is disposed on a side of the second connection portion away from the first semiconductor layer.

7. The light emitting device according to claim 6, characterized in that: The second connecting portion comprises: A second sub-section connected to a side of the light-emitting layer close to the opening; and a third sub-portion connected to a side of the second semiconductor layer close to the opening, the third sub-portion being located on a side of the second sub-portion away from the first semiconductor layer, and a side of the third sub-portion away from the second sub-portion being connected to the second electrode, and a material of the third sub-portion being the same as that of the second semiconductor layer; The material of the second sub-section is different from the material of the light-emitting layer.

8. The light emitting device according to any one of claims 1 to 7, characterized in that: In a plan view of the light emitting device, the pattern of the light emitting layer has a center line, and the pattern of the light emitting layer is a pattern symmetrical about the center line.

9. The light emitting device according to any one of claims 1 to 7, characterized in that: In a plan view of the light emitting device, an area of ​​the light emitting layer is larger than an area of ​​the opening.

10. A display panel, characterized in that: The invention comprises a light emitting device as claimed in any one of claims 1 to 9.

11. The display panel according to claim 10, wherein: The display panel further includes: A substrate, wherein the plurality of light emitting devices are arranged on one side of the substrate; An encapsulation layer, disposed on one side of the substrate and covering the plurality of light-emitting devices; A plurality of lenses are arranged on a side of the packaging layer away from the substrate, one lens is arranged corresponding to one light-emitting device, and the projection center point of the orthographic projection of the lens on the substrate coincides with the symmetry center of the orthographic projection of the corresponding light-emitting layer on the substrate.

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