High-transmittance perovskite battery structure and manufacturing method thereof

Abstract

The invention discloses a high-transmittance perovskite cell structure and a manufacturing method thereof, and the structure comprises front plate glass which is provided with a light-in surface and a light-out surface which are opposite to each other, and the light-out surface is provided with a plurality of protrusions; the transparent conductive layer is arranged on the light emitting surface; p1 laser scribing is carried out, and the transparent conductive layer is cut off; the first charge transport layer is arranged on the transparent conductive layer; the perovskite cell layer is arranged on the first charge transport layer; the second charge transport layer is arranged on the perovskite cell layer; p2 laser scribing is carried out to cut off the second charge transport layer, the perovskite cell layer and the first charge transport layer; the back electrode layer is arranged on the second charge transmission layer, is filled into the P2 laser scribing channel and is electrically connected with the transparent conductive layer; p3 laser scribing is carried out to cut off the back electrode layer, the second charge transfer layer, the perovskite cell layer and the first charge transfer layer; the bus bar is used for connecting the perovskite cell layers separated by the bulges in parallel; packaging the adhesive film; back plate glass; and the butyl rubber is arranged between the front plate glass and the back plate glass and is used for isolating external water vapor.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film batteries, and in particular to a high-transmittance perovskite battery structure and a manufacturing method thereof. Background Art

[0002] At present, perovskite thin-film battery components generally require four laser scribings (i.e., P1, P2, P3, and P4 laser scribings) to achieve battery partitioning.

[0003] In certain specific application scenarios, photovoltaic modules are required to have high light transmittance. If one wants to achieve a light-transmitting photovoltaic module, the existing technology generally requires P5 laser scribing during production, using P5 laser scribing to create gaps for light transmission (currently P5 laser scribing generally uses high-energy nanosecond infrared lasers). However, P5 laser scribing will increase the damage to the perovskite cell layer and the heat-affected zone, thereby affecting the efficiency of the module. Summary of the invention

[0004] The purpose of the present invention is to design a highly light-transmitting perovskite cell structure and a method for manufacturing the same, in view of the fact that existing light-transmitting perovskite components require P5 laser scribing during production, which increases the damage to the perovskite cell layer and the heat-affected zone, thereby reducing the efficiency of the component. The present invention can reduce the damage and thermal impact of P5 laser scribing on the perovskite cell, thereby avoiding a decrease in component efficiency.

[0005] To achieve the above object, the present invention is implemented by the following technical solutions:

[0006] The present invention provides a high-transmittance perovskite battery structure, the perovskite battery structure comprising:

[0007] A front glass plate having a first direction and a second direction perpendicular to each other, and the front glass plate further having a light incident surface and a light emitting surface opposite to each other, wherein the light emitting surface is provided with a plurality of protrusions parallel to the second direction, and the protrusions are used to increase light transmittance;

[0008] A transparent conductive layer, which is stacked in the non-convex area of ​​the light-emitting surface, and the transparent conductive layer is separated by a plurality of protrusions;

[0009] A plurality of P1 laser scribing tracks arranged parallel to the first direction for scribing the transparent conductive layer;

[0010] A first charge transport layer, which is stacked on the transparent conductive layer and located in the non-protrusion area, and the first charge transport layer is also separated by a plurality of protrusions;

[0011] A perovskite cell layer, which is stacked on the first charge transport layer and located in the non-protrusion area, and the same perovskite cell layer is also separated by a plurality of protrusions to form a plurality of rows of perovskite cell strings;

[0012] A second charge transport layer is stacked on the perovskite cell layer and located in the non-protrusion area, and the second charge transport layer is also separated by a plurality of protrusions;

[0013] A plurality of P2 laser scribing lines, which are arranged parallel to the P1 laser scribing lines, and are used to scribe the second charge transport layer, the perovskite cell layer, and the first charge transport layer (without slicing the transparent conductive layer), thereby forming a plurality of perovskite sub-cells;

[0014] A back electrode layer, which is stacked on the second charge transport layer and partially fills the P2 laser scribe line and forms an electrical connection with the transparent conductive layer, thereby connecting a plurality of perovskite subcells in series;

[0015] A plurality of P3 laser scribing lines, which are arranged parallel to the P2 laser scribing lines and are used to scribing the back electrode layer, the second charge transport layer, the perovskite cell layer and the first charge transport layer, but not the transparent conductive layer;

[0016] A bus bar, which is used to connect the perovskite battery layers separated by the protrusions in parallel, that is, to connect several rows of perovskite battery strings in parallel through the bus bar;

[0017] A packaging film, which is stacked on the back electrode layer;

[0018] A back plate glass, which is laminated on the packaging film;

[0019] And butyl rubber is arranged between the front glass and the back glass to isolate external water vapor and prevent water vapor from entering the perovskite cell layer.

[0020] Furthermore, a highly light-transmitting perovskite cell structure: the protrusions are configured as continuous or discontinuous strip structures.

[0021] Furthermore, a highly light-transmittance perovskite battery structure: the height H of the protrusion is set to 0.5 μm≤H≤1.0 μm, the width W of the protrusion is set to 500.0 μm≤W≤5000.0 μm; the spacing S between adjacent protrusions is set to S≥50.0 mm.

[0022] Specifically, the position corresponding to the protruding structure is a light-transmitting area, and the light transmittance of the perovskite cell structure is determined by the width W of the protruding structure and the number of settings.

[0023] Furthermore, a highly light-transmittance perovskite cell structure is provided: the angle between the protrusion and the light-emitting surface is α, and α>70°.

[0024] Furthermore, a highly light-transmitting perovskite cell structure is provided: the top of the protrusion is configured as a planar structure.

[0025] The top of the raised structure is set as a flat structure, which can increase the light transmittance of the glass.

[0026] The present invention also provides a method for manufacturing a high-transmittance perovskite cell structure, the method comprising the following steps:

[0027] S1, providing a glass substrate having a first direction and a second direction, and forming a plurality of protrusions parallel to the second direction on the surface of the glass substrate through a rolling process, thereby obtaining a front plate glass;

[0028] S2, depositing a transparent conductive layer on the non-convex area of ​​the front glass, wherein the transparent conductive layer is separated by a plurality of protrusions, and then performing P1 laser scribing along a first direction, thereby forming a plurality of P1 laser scribing lines that cut through the transparent conductive layer (P1 does not cut through the protrusions);

[0029] S3, depositing a first charge transport layer on the transparent conductive layer;

[0030] S4, depositing a perovskite battery layer on the first charge transport layer, wherein the perovskite battery layer is separated by a plurality of protrusions to form a plurality of rows of perovskite battery strings;

[0031] S5, depositing a second charge transport layer on the perovskite battery layer, and then performing P2 laser scribing along the first direction, thereby forming a plurality of P2 laser scribing lines that scribe the second charge transport layer, the perovskite battery layer and the first charge transport layer, and obtaining a plurality of perovskite sub-batteries after slicing the perovskite battery layer;

[0032] S6, depositing a back electrode layer on the second charge transport layer, and allowing the deposited material of the back electrode layer to partially fill the P2 laser scribe line and form an electrical connection with the transparent conductive layer, so as to connect a plurality of perovskite sub-cells in series;

[0033] S7, performing P3 laser scribing along the first direction to obtain a plurality of P3 laser scribing tracks that scribe the back electrode layer, the second charge transport layer, the perovskite cell layer, and the first charge transport layer;

[0034] S8, welding the busbars, so that the perovskite battery layers separated by the protrusions are connected in parallel, that is, a plurality of rows of perovskite battery strings are connected in parallel through the busbars;

[0035] S9. Stacking the packaging film and the back glass in sequence on the back electrode layer, and then setting butyl rubber between the front glass and the back glass to isolate external water vapor, performing P4 laser scribing for edge cleaning, and installing the photovoltaic junction box after lamination to complete the production of the high-transmittance perovskite battery structure.

[0036] Beneficial effects of the present invention:

[0037] Generally speaking, the same size of light-transmitting photovoltaic modules sacrifice the effective power generation area and increase the light-transmitting gap compared to ordinary photovoltaic modules, so their power generation efficiency is lower than that of non-light-transmitting photovoltaic modules (ordinary photovoltaic modules), but for some specific application scenarios, the light transmittance of the module is required to be higher, so light-transmitting photovoltaic modules are needed. When the existing light-transmitting perovskite modules are manufactured, P5 laser scribing is generally required after completing four laser scribings (P1, P2, P3, and P4 laser scribings) to mark out the light-transmitting area, but P5 laser scribing will increase the damage to the perovskite battery layer and the heat-affected zone, resulting in the problem of power reduction in the module. The present invention can reduce the damage and thermal impact of the P5 laser scribing on the battery layer by setting a protrusion on the front glass and using this protrusion as the light-transmitting area; the high light-transmitting perovskite battery structure of the present invention can increase its power generation efficiency by more than 2.0% compared to the light-transmitting perovskite module manufactured by P5 laser scribing.

[0038] At the same time, the high-transmittance perovskite cell structure of the present invention reduces a laser scribing process (P5 laser scribing), which not only simplifies the production process but also significantly reduces the production cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0040] Figure 1 A top view of the front glass provided in Example 1 of the present invention;

[0041] Figure 2 A cross-sectional view of the front glass provided in Example 1 of the present invention;

[0042] Figure 3 A top view of the high-transmittance perovskite cell structure provided in Example 1 of the present invention;

[0043] Figure 4 for Figure 3 Cross-section view in the AA direction;

[0044] Figure 5 for Figure 3 Cross-section along the middle BB direction;

[0045] Figure 6 A top view of the front glass provided in Example 3 of the present invention;

[0046] Figure 7 A top view of the high-transmittance perovskite cell structure produced in Comparative Example 1;

[0047] Figure 8 for Figure 7 Cross-section view along the AA direction.

[0048] Markings in the figure: 1-front glass, 2-transparent conductive layer, 3-P1 laser scribe, 4-first charge transport layer, 5-perovskite cell layer, 6-second charge transport layer, 7-P2 laser scribe, 8-back electrode layer, 9-P3 laser scribe, 10-bus bar, 11-light incident surface, 12-light output surface, 13-protrusion, 14-non-protrusion area, 15-encapsulation film, 16-back glass, 17-butyl adhesive, 18-P5 laser scribe, 51-perovskite sub-cell, 52-perovskite cell string. DETAILED DESCRIPTION

[0049] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", "top", "bottom", etc., indicating the position or positional relationship, are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein.

[0051] Example 1

[0052] like Figures 1 to 5 As shown, this embodiment 1 designs a high-transmittance perovskite battery structure, and the perovskite battery structure includes:

[0053] A front glass plate 1 having a first direction and a second direction perpendicular to each other, and the front glass plate 1 further having a light incident surface 11 and a light emitting surface 12 opposite to each other, the light emitting surface 12 being provided with a plurality of protrusions 13 parallel to the second direction, and the protrusions 13 being provided as a continuous long strip structure, with a height H of 0.8 μm, a width W of 1.0 mm, a spacing S between adjacent protrusions 13 of 100.0 mm, the protrusions 13 being provided perpendicular to the light emitting surface 12 (i.e., α=90°), and the top of the protrusions 13 being provided as a plane structure for increasing light transmittance;

[0054] A transparent conductive layer 2 is stacked in a non-convex area 14 on the light emitting surface 12, that is, the transparent conductive layer 2 is separated by the protrusions 13;

[0055] A plurality of P1 laser scribing tracks 3 arranged parallel to the first direction for scribing the transparent conductive layer 2 but not scribing the protrusions 13;

[0056] A first charge transport layer 4, which is stacked on the transparent conductive layer 2 and located in the non-convex area 14, and the first charge transport layer 4 is also separated by the protrusion 13;

[0057] A perovskite cell layer 5, which is stacked on the first charge transport layer 4 and located in the non-protrusion area 14, and the same perovskite cell layer 5 is also separated by the protrusion 13, so as to form a plurality of rows of perovskite cell strings 52 parallel to the second direction;

[0058] A second charge transport layer 6, which is stacked on the perovskite cell layer 5 and located in the non-protrusion area 14, and the second charge transport layer 6 is also separated by the protrusion 13;

[0059] A plurality of P2 laser scribing lines 7, which are arranged parallel to the P1 laser scribing lines 3, and are used to scribe the second charge transport layer 6, the perovskite cell string 52, and the first charge transport layer 4 (without slicing the transparent conductive layer 2), thereby forming a plurality of perovskite sub-cells 51;

[0060] A back electrode layer 8, which is stacked on the second charge transport layer 6 and partially fills the P2 laser scribe line 7 and forms an electrical connection with the transparent conductive layer 2, thereby connecting a plurality of perovskite subcells 51 in series;

[0061] A plurality of P3 laser scribing tracks 9, which are arranged parallel to the P2 laser scribing tracks 7 and are used to scribing the back electrode layer 8, the second charge transport layer 6, the perovskite cell layer 5 and the first charge transport layer 4;

[0062] The bus bar 10 is used to connect the perovskite battery layers 5 separated by the protrusions 13 in parallel, that is, to connect several perovskite battery strings 52 in parallel through the bus bar 10;

[0063] A packaging film 15, which is stacked on the back electrode layer 8;

[0064] A back plate glass 16, which is laminated on the packaging film 15;

[0065] And butyl rubber 17, which is arranged between the front glass 1 and the back glass 16, is used to isolate external water vapor from entering the perovskite cell layer.

[0066] Example 2

[0067] A method for manufacturing a high-transmittance perovskite cell structure is provided for the above-mentioned embodiment 1, and the method comprises the following steps:

[0068] S1, providing a glass substrate having a first direction and a second direction perpendicular to each other, and forming a plurality of long strip-shaped protrusions 13 parallel to the second direction on the surface of the glass substrate by a rolling process, thereby obtaining a front plate glass 1;

[0069] S2, depositing an ITO conductive film on the non-raised area 14 on the front glass 1 to form a transparent conductive layer 2, wherein the transparent conductive layer 2 is separated by the raised areas 13, and then performing P1 laser scribing along the first direction (without scribing the raised areas 13), thereby forming a plurality of P1 laser scribing lines 3 that scribble the transparent conductive layer 2;

[0070] S3, depositing NiO on the transparent conductive layer 2 to form a first charge transport layer 4, and the first charge transport layer 4 is separated by the protrusion 13;

[0071] S4, depositing a perovskite battery layer 5 on the first charge transport layer 4, and the perovskite battery layer 5 is separated by the protrusions 13, so as to form a plurality of rows of perovskite battery strings 52 parallel to the second direction;

[0072] S5, depositing SnO2 on the perovskite cell layer 5 (i.e., on each perovskite cell string 52) to form a second charge transport layer 6, and then performing P2 laser scribing along the first direction to form a plurality of P2 laser scribing tracks 7 that cut through the second charge transport layer 6, each perovskite cell string 52, and the first charge transport layer 4, but do not cut through the transparent conductive layer 2 and the protrusion 13, and after cutting through the perovskite cell string 52, obtain a plurality of perovskite sub-cells 51;

[0073] S6, depositing a back electrode layer 8 on the second charge transport layer 6, and allowing the deposited material of the back electrode layer to partially fill the P2 laser scribe line 7 and form an electrical connection with the transparent conductive layer 2, thereby connecting a plurality of perovskite sub-cells 51 in series;

[0074] S7, performing P3 laser scribing along the first direction to obtain a plurality of P3 laser scribing tracks 9 that scribe the back electrode layer 8, the second charge transport layer 6, the perovskite cell layer 5 and the first charge transport layer 4, but do not scribe the transparent conductive layer 2;

[0075] S8, welding the busbar 10, so that the perovskite battery layers 5 separated by the protrusions 13 are connected in parallel, that is, a plurality of perovskite battery strings 52 are connected in parallel through the busbar 10;

[0076] S9, stacking the packaging film 15 and the back glass 16 in sequence on the back electrode layer 8, and then setting butyl rubber 17 between the front glass 1 and the back glass 16 for isolating external water vapor, performing P4 laser scribing for edge cleaning, and installing the photovoltaic junction box after lamination to complete the production of the high-transmittance perovskite battery structure.

[0077] Example 3

[0078] The difference between Example 3 and Example 1 is that the protrusions 13 arranged on the light emitting surface 12 of the front glass plate 1 in Example 3 are non-continuous long strip structures, such as Figure 6 As shown, the rest is the same as Example 1.

[0079] Comparative Example 1

[0080] like Figures 7-8 As shown, Comparative Example 1 provides a method for manufacturing a high-transmittance perovskite component, the method comprising the following steps:

[0081] S1, providing a glass substrate having a first direction and a second direction perpendicular to each other, and using the glass substrate as a front glass 1;

[0082] S2, depositing an ITO conductive film on the front glass 1 to form a transparent conductive layer 2, and then performing P1 laser scribing along a first direction to form a plurality of P1 laser scribing tracks 3 that scribe the transparent conductive layer 2;

[0083] S3, depositing NiO on the transparent conductive layer 2 to form a first charge transport layer 4;

[0084] S4, depositing a perovskite battery layer 5 on the first charge transport layer 4;

[0085] S5, depositing SnO2 on the perovskite battery layer 5 to form a second charge transport layer 6, and then performing P2 laser scribing along the first direction, thereby forming a plurality of P2 laser scribing tracks 7 that scribe the second charge transport layer 6, the perovskite battery layer 5, and the first charge transport layer 4, but do not scribe the transparent conductive layer 2;

[0086] S6, depositing a back electrode layer 8 on the second charge transport layer 6, and allowing the deposited material of the back electrode layer to partially fill the P2 laser scribe line 7 and form an electrical connection with the transparent conductive layer 2;

[0087] S7, continue to perform P3 laser scribing along the first direction to obtain a plurality of P3 laser scribing tracks 9 that scribe the back electrode layer 8, the second charge transport layer 6, the perovskite cell layer 5 and the first charge transport layer 4, but do not scribe the transparent conductive layer 2;

[0088] S8, performing P5 laser scribing along the second direction to scribe the back electrode layer 8, the second charge transport layer 6, the perovskite cell layer 5, the first charge transport layer 4 and the transparent conductive layer 2, forming a plurality of P5 laser scribing lanes 18;

[0089] S9, welding the busbar 10, so that the perovskite cell layer 5 cut by the P5 laser scribing 18 is connected in parallel;

[0090] S10, stacking the packaging film 15 and the back glass 16 in sequence on the back electrode layer 8, and then setting butyl rubber 17 between the front glass 1 and the back glass 16 for isolating external water vapor, performing P4 laser scribing for edge cleaning, and installing the photovoltaic junction box after lamination to complete the production of the high-transmittance perovskite component.

[0091] The difference between Comparative Example 1 and Example 2 is that the high-transmittance perovskite component produced in Comparative Example 1 was subjected to P5 laser scribing.

[0092] The test found that the power generation efficiency of the high-transmittance perovskite component of Comparative Example 1 is about 2.0% lower than that of the high-transmittance perovskite cell structure produced in Example 2. The reason is that the high-transmittance perovskite cell structure produced by the present invention reduces one laser scribing (P5 laser scribing) process, so the perovskite cell layer of the present invention suffers less damage and thermal impact caused by laser scribing, thereby avoiding the decrease of component power.

[0093] At the same time, the high-transmittance perovskite battery structure provided by the present invention reduces a laser scribing process, and its manufacturing process is simpler and the manufacturing cost is lower.

[0094] The above are preferred embodiments of the present invention and are only used to explain the present invention, not to limit the present invention. Any obvious changes or modifications derived from the technical solution of the present invention are still within the protection scope of the present invention.

Claims

1. A high-transmittance perovskite cell structure, characterized in that: The perovskite battery structure comprises: A front glass plate (1) having a first direction and a second direction, and the front glass plate (1) further having a light incident surface (11) and a light emitting surface (12) opposite to each other, wherein the light emitting surface (12) is provided with a plurality of protrusions (13) parallel to the second direction, and the protrusions (13) are used to increase light transmittance; A transparent conductive layer (2) is stacked in a non-convex area (14) on the light emitting surface (12), wherein the transparent conductive layer (2) is separated by a plurality of protrusions (13); A plurality of P1 laser scribing tracks (3) arranged parallel to the first direction and used for scribing the transparent conductive layer (2); A first charge transport layer (4) stacked on the transparent conductive layer (2); A perovskite cell layer (5), which is stacked on the first charge transport layer (4); A second charge transport layer (6), which is stacked on the perovskite cell layer (5); A plurality of P2 laser scribing tracks (7) arranged parallel to the P1 laser scribing tracks (3) for scribing the second charge transport layer (6), the perovskite cell layer (5) and the first charge transport layer (4), thereby forming a plurality of perovskite subcells (51); A back electrode layer (8) which is stacked on the second charge transport layer (6) and partially fills the P2 laser scribe line (7) and forms an electrical connection with the transparent conductive layer (2), thereby connecting a plurality of perovskite subcells (51) in series; A plurality of P3 laser scribing tracks (9) are arranged parallel to the P2 laser scribing tracks (7) and are used to scribing the back electrode layer (8), the second charge transport layer (6), the perovskite cell layer (5) and the first charge transport layer (4); A bus bar (10) used to connect in parallel the perovskite battery layers (5) separated by the protrusions (13); A packaging adhesive film (15) stacked on the back electrode layer (8); A back panel glass (16) which is laminated on the packaging adhesive film (15); And butyl rubber (17), which is arranged between the front plate glass (1) and the back plate glass (16) and is used to isolate external water vapor.

2. A highly transparent perovskite cell structure according to claim 1, characterized in that: The protrusion (13) is configured as a continuous or discontinuous long strip structure.

3. A highly light-transmitting perovskite cell structure according to claim 1 or 2, characterized in that: The height H of the protrusion (13) is set to 0.5 μm≤H≤1.0 μm, and the width W is set to 500.0 μm≤W≤5000.0 μm; the spacing S between adjacent protrusions (13) is set to S≥50.0 mm.

4. A highly transparent perovskite cell structure according to claim 1 or 2, characterized in that: The included angle between the protrusion (13) and the light emitting surface (12) is α, and satisfies α>70°.

5. A highly transparent perovskite cell structure according to claim 1 or 2, characterized in that: The top of the protrusion (13) is configured as a planar structure.

6. A method for manufacturing a high-transmittance perovskite cell structure according to any one of claims 1 to 5, characterized in that: The method comprises the following steps: S1, providing a glass substrate having a first direction and a second direction, and forming a plurality of protrusions (13) parallel to the second direction on the surface of the glass substrate through a rolling process, thereby obtaining a front plate glass (1); S2, depositing a transparent conductive layer (2) on a non-convex area (14) on the front glass plate (1), wherein the transparent conductive layer (2) is separated by a plurality of protrusions (13), and then performing P1 laser scribing along a first direction, thereby forming a plurality of P1 laser scribing lines (3) that scribe the transparent conductive layer (2); S3, depositing a first charge transport layer (4) on the transparent conductive layer (2); S4, depositing a perovskite battery layer (5) on the first charge transport layer (4); S5, depositing a second charge transport layer (6) on the perovskite battery layer (5), and then performing P2 laser scribing along the first direction, thereby forming a plurality of P2 laser scribing lines (7) that scribe the second charge transport layer (6), the perovskite battery layer (5), and the first charge transport layer (4), and obtaining a plurality of perovskite sub-batteries (51) after slicing the perovskite battery layer (5); S6, depositing a back electrode layer (8) on the second charge transport layer (6), and allowing the deposited material of the back electrode layer to partially fill the P2 laser scribe line (7) and form an electrical connection with the transparent conductive layer (2), so as to connect a plurality of perovskite subcells (51) in series; S7, performing P3 laser scribing along the first direction to obtain a plurality of P3 laser scribing tracks (9) that scribe the back electrode layer (8), the second charge transport layer (6), the perovskite cell layer (5) and the first charge transport layer (4); S8, welding the busbar (10), so that the perovskite battery layers (5) separated by the protrusions (13) are connected in parallel; S9, stacking the packaging film (15) and the back plate glass (16) in sequence on the back electrode layer (8), and then setting butyl rubber (17) between the front plate glass (1) and the back plate glass (16) for isolating external water vapor, performing P4 laser scribing for edge cleaning, and installing the photovoltaic junction box after lamination to complete the production of the high-transmittance perovskite battery structure.

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