Thinning processing control method for LED chip

Abstract

The invention discloses an LED chip thinning processing control method comprising the following steps: obtaining the model size and initial thickness of a chip workpiece, and setting an initial removal rate; carrying out thinning processing on the chip workpiece based on the initial removal rate, carrying out multi-point thickness detection on the thinned chip, and calculating a thickness mean value and a thickness difference value of the thinned chip; calculating the actual removal rate of the thinned chip, and adjusting the initial removal rate into the actual removal rate; calculating a contrastive analysis value of the chip workpiece in the same grinding and polishing period according to the thickness difference value, generating a temperature adjustment value of the water chiller based on the contrastive analysis value, and adjusting the working temperature of the water chiller based on the temperature adjustment value of the water chiller; whether the average thickness value meets the model and size requirements of the chip workpiece or not is detected, a plurality of grinding and polishing periods are divided, dynamic adjustment is conducted according to the actual removal rate of the detected grinding and polishing periods, real-time adjustment control over the working temperature of the ice water machine is matched, and the grinding and polishing machining stability and grinding and polishing machining quality of the grinding and polishing equipment on the chip workpiece are improved.

Description

Technical Field

[0001] The invention relates to the technical field of LED chip processing, and in particular to a thinning processing control method for an LED chip. Background Art

[0002] During the processing of LED chips, it is necessary to perform grinding and polishing according to the LED chip model and size required by the LED device, so that the thickness of the LED chip meets the actual use requirements. The existing grinding and polishing equipment is mainly composed of a grinding and polishing disc, a chiller and a control host. The LED chip is polished and thinned by the grinding and polishing disc. However, the current grinding and polishing equipment generally performs batch grinding and polishing on LED chips according to preset grinding and polishing parameters. Due to the differences in the working temperature and the contact relationship between the grinding and polishing disc and different chips during the long-term working process of the grinding and polishing disc of the grinding and polishing equipment, the grinding and polishing processing stability of multiple LED chips is insufficient through the fixed parameter grinding and polishing method, and the finished product quality of each LED chip is poor. Summary of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the prior art. The present invention provides a thinning processing control method for LED chips. By dividing the process into multiple grinding and polishing cycles and dynamically adjusting the actual removal rate of the grinding and polishing cycles, the real-time adjustment and control of the working temperature of the ice machine are combined to improve the grinding and polishing stability and grinding and polishing quality of the chip workpiece by the grinding and polishing equipment.

[0004] The present invention provides a processing control method for thinning an LED chip, the control method comprising:

[0005] S11: obtaining the model size of the chip workpiece and the initial thickness of the chip workpiece, and setting the initial removal rate according to the model size of the chip workpiece;

[0006] S12: performing thinning processing on the chip workpiece based on the initial removal rate, obtaining the thinned processed chip, performing multi-point thickness detection on the thinned processed chip, obtaining a plurality of measured thickness values ​​of the thinned processed chip, and calculating the thickness average and thickness difference of the thinned processed chip based on the plurality of measured thickness values;

[0007] S13: Calculate the actual removal rate of the thinned chip by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and adjust the initial removal rate to the actual removal rate;

[0008] S14: calculating a comparative analysis value of the chip workpiece in the same grinding and polishing cycle according to the thickness difference, comparing the comparative analysis value with a preset standard threshold, generating a chiller temperature adjustment value according to the comparison result, and adjusting the operating temperature of the chiller based on the chiller temperature adjustment value;

[0009] S15: Check whether the thickness average meets the model size requirements of the chip workpiece. If so, obtain the chip product. If not, repeat steps S12 to S15.

[0010] Further, the obtaining of the model size of the chip workpiece and the initial thickness of the chip workpiece and setting the initial removal rate according to the model size of the chip workpiece includes:

[0011] Place the chip workpiece in the repairing equipment and detect the model and size of the chip workpiece based on the MES system;

[0012] According to the model and size of the chip workpiece, the thickness data of the finished chip product after the chip workpiece has been thinned is queried in the MES system.

[0013] Furthermore, the calculation formula of the initial removal rate is:

[0014] C1 = (T2-T3) / 10min;

[0015] Wherein, C1 is the initial removal rate, T2 is the initial thickness of the chip workpiece, T3 is the thickness data of the finished chip product, and 10min is the processing time corresponding to the chip workpiece.

[0016] Further, the thinning process is performed on the chip workpiece based on the initial removal rate, the thinned chip is obtained, the thickness of the thinned chip is detected at multiple points, a plurality of measured thickness values ​​of the thinned chip is obtained, and the thickness mean and thickness difference of the thinned chip are calculated based on the plurality of measured thickness values, including:

[0017] Setting a plurality of measuring points on the thinned chip, wherein the plurality of measuring points are arranged to be evenly distributed, or the plurality of measuring points are arranged to be randomly distributed;

[0018] Furthermore, the distribution range of the plurality of measuring points completely covers the top surface of the thinned chip.

[0019] Furthermore, the multi-point thickness detection of the thinned chip to obtain a plurality of measured thickness values ​​of the thinned chip includes:

[0020] Placing the thinned chip on the detection position of the thickness detection mechanism, and performing laser ranging operation on the table surface of the carrier where the thinned chip is located through the thickness detection mechanism;

[0021] Recording the distance between the thickness measuring mechanism and the table surface of the carrying platform, and using the distance between the thickness measuring mechanism and the table surface of the carrying platform as a reference distance;

[0022] Laser ranging operation is performed on each measuring point of the thinned chip, and based on the detection distance obtained by measuring each measuring point, difference calculation is performed in combination with the reference distance to obtain thickness detection data of each measuring point of the thinned chip.

[0023] Furthermore, the actual removal rate of the thinned chip is calculated by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and the initial removal rate is adjusted to the actual removal rate, which includes:

[0024] The calculation formula of the actual removal rate is:

[0025] C2=(T2-T4) / S1;

[0026] Among them, C2 is the actual removal rate, T2 is the initial thickness of the chip workpiece, T4 is the average thickness of the thinned workpiece, and S1 is the time that the MES system spends on grinding and polishing the chip workpiece in a single grinding and polishing cycle.

[0027] Furthermore, the actual removal rate of the thinned chip is calculated by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and the initial removal rate is adjusted to the actual removal rate, which further includes:

[0028] The MES system records the actual grinding and polishing time of the chip workpiece by the grinding disc equipment according to the contact feedback between the grinding disc equipment and the chip workpiece.

[0029] Further, the comparative analysis value of the chip workpiece in the same grinding and polishing cycle is calculated according to the thickness difference, the comparative analysis value is compared with a preset standard threshold, and a chiller temperature adjustment value is generated according to the comparison result. Adjusting the working temperature of the chiller based on the chiller temperature adjustment value includes:

[0030] Obtaining measured thickness values ​​of a plurality of measuring points of the thinned chip according to the thickness measuring mechanism, and extracting a maximum thickness value and a minimum thickness value of the thinned chip from the measured thickness values ​​of the plurality of measuring points;

[0031] The maximum thickness value and the minimum thickness value of the thinned chip are calculated to obtain the difference between the maximum thickness value and the minimum thickness value of the thinned chip, and the difference is marked as the thickness difference.

[0032] Further, the comparative analysis value of the chip workpiece in the same grinding and polishing cycle is calculated according to the thickness difference, the comparative analysis value is compared with a preset standard threshold, and a chiller temperature adjustment value is generated according to the comparison result. Adjusting the working temperature of the chiller based on the chiller temperature adjustment value also includes:

[0033] According to the order of grinding and polishing, the thickness difference of the chip workpiece that is first ground and polished is calculated by difference with the thickness difference of the chip workpiece that is last ground and polished to obtain a comparative analysis value, and the temperature of the chiller is adjusted based on the comparative analysis value.

[0034] Further, adjusting the temperature of the ice machine based on the comparative analysis value includes:

[0035] When the comparative analysis value is a positive value, and the absolute value of the comparative analysis value is greater than the preset standard threshold, the cooling temperature of the water chiller is increased, that is, the water chiller is heated up;

[0036] When the comparative analysis value is a negative value, and the absolute value of the comparative analysis value is greater than a preset standard threshold, the cooling temperature of the water chiller is lowered, that is, the water chiller is temperature-lowered.

[0037] The present invention provides a method for controlling the thinning processing of an LED chip. In the process of thinning the LED chip, the grinding and polishing thinning processing of a chip workpiece is divided into a plurality of grinding and polishing processing cycles, and the grinding and polishing removal rate of the next grinding and polishing cycle is adjusted based on the actual grinding and polishing removal rate of the current grinding and polishing cycle; by real-time detection of the TTV chip value of the chip workpiece in each grinding and polishing cycle, the temperature of a water chiller is adjusted according to the grinding and polishing processing conditions of the chip workpiece, so that the grinding and polishing system can autonomously perform dynamic adjustment of the grinding and polishing removal rate and real-time adaptive adjustment of the temperature of the water chiller, thereby improving the processing effect of the grinding and polishing thinning of the chip workpiece. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 1 is a flow chart of a method for controlling thinning of an LED chip according to a first embodiment of the present invention;

[0040] Figure 2 It is a flow chart of a thinning process control method for an LED chip according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] Figure 1 The flowchart of the thinning process control method of the LED chip in the embodiment of the present invention is shown. The process control method includes:

[0043] S11: Obtain the model size of the chip workpiece and the initial thickness of the chip workpiece, and set the initial removal rate according to the model size of the chip workpiece.

[0044] The chip workpiece is placed in the disk repairing equipment, the model and size of the chip workpiece is detected based on the MES system, and the thickness data of the chip finished product after the chip workpiece completes the thinning process is queried in the MES system according to the model and size of the chip workpiece.

[0045] The thickness measurement component of the MES system detects the initial thickness of the chip workpiece, and the initial removal rate is set based on the initial thickness of the chip workpiece and the thickness data of the chip finished product. The calculation formula of the initial removal rate is:

[0046] C1 = (T2-T3) / 10min;

[0047] Wherein, C1 is the initial removal rate, T2 is the initial thickness of the chip workpiece, T3 is the thickness data of the finished chip product, and 10min is the processing time corresponding to the chip workpiece.

[0048] Furthermore, the grinding and polishing time of the chip workpiece can be set according to actual processing requirements and experience in grinding and polishing of chip workpieces. In this embodiment, it is set to 10 minutes to meet the processing requirements of the chip workpiece.

[0049] The MES system sets a repairing cycle according to the model and size of the chip workpiece, grinds and polishes the chip workpiece at an initial removal rate, and grinds the chip workpiece according to a preset repairing cycle so that the size of the chip workpiece can meet the chip processing requirements.

[0050] Furthermore, the Manufacturing Execution System (MES) is a production information management system at the execution level of the workshop of a manufacturing enterprise. Based on the MES system, automated processing management of the production line can be achieved to improve the production efficiency of the production line.

[0051] Furthermore, the MES system is provided with a grinding and polishing algorithm for chip workpieces, which is set as follows:

[0052] T1 = T2 - T3;

[0053] Among them, T1 is the thickness of the chip workpiece that needs to be removed by grinding and polishing, T2 is the initial thickness of the chip workpiece, and T3 is the thickness data of the finished chip.

[0054] S12: performing thinning processing on the chip workpiece based on the initial removal rate to obtain a thinned chip;

[0055] The multi-point thickness detection is performed on the thinned chip to obtain a plurality of measured thickness values ​​of the thinned chip, and the thickness average and thickness difference of the thinned chip are calculated based on the plurality of measured thickness values.

[0056] The thickness of the thinned chip is detected by a thickness measuring mechanism. A plurality of measuring points are set on the thinned chip. The plurality of measuring points can be configured to be evenly distributed. By setting a preset spacing, the plurality of measuring points can be arranged in an array. The array arrangement structure formed by the plurality of measuring points can cover the entire top surface of the thinned chip, thereby improving the accuracy of the thickness detection of the thinned chip.

[0057] Furthermore, the thickness measuring mechanism can be configured as a laser ranging mechanism, which emits a ranging laser to each measuring point of the thinned chip so that the ranging laser is in contact with the surface of the thinned chip, and based on the reflection from the surface of the thinned chip, the ranging laser is fed back to the thickness measuring mechanism. The thickness measuring mechanism calculates the thickness of the corresponding measuring point of the thinned chip based on the laser information received after reflection.

[0058] Furthermore, the chip is placed on the detection position of the thickness detection mechanism, and the thickness detection mechanism is used to perform laser ranging operation on the table top of the carrier platform where the thinned processing chip is located, so as to record the distance between the thickness measuring mechanism and the table top of the carrier platform, and the distance between the thickness measuring mechanism and the table top of the carrier platform is used as the reference distance. By performing laser ranging operation on each measuring point of the thinned processing chip, a difference calculation is performed based on the detection distance obtained by measuring each measuring point and the reference distance, so as to obtain the thickness detection data of the thinned processing chip corresponding to each measuring point.

[0059] Furthermore, a plurality of the measuring points may be randomly distributed on the surface of the thinned chip, and the distribution range of the plurality of the measuring points may completely cover the thinned chip.

[0060] Specifically, the thickness data of the thinned chip obtained by detecting several measuring points are summarized and calculated, and the average is calculated according to the number of detections at several detection points, so as to obtain the average thickness data of the thinned chip. By setting several measuring points, the accuracy of the thickness detection of the thinned chip can be met.

[0061] Furthermore, the thickness data of the thinned chip can be measured by manual detection, based on the staff performing thickness measurements at different measurement points of the thinned chip, and inputting the measurement data into the MES system, so that the MES system can adjust the actual removal rate of the chip workpiece according to the grinding and polishing thickness of the thinned chip.

[0062] Furthermore, when the thinned chip is automatically detected based on the thickness measurement mechanism, the number of the measuring points is set to be more than 15 points. By setting a certain number of measuring points, the thickness detection accuracy of the thinned chip is improved.

[0063] When the staff conducts manual inspection of the thinned chips, the number of the measurement points can be set to between 7 and 10, and the thickness measurement points are selected based on the operator's assessment of the chip's polishing appearance, thereby ensuring the thickness inspection efficiency of the thinned chips and the accuracy of manual inspection.

[0064] Specifically, thickness detection is performed at multiple measuring points in the thinned chip, the highest thickness detection value and the lowest thickness detection value are extracted from the thickness detection values ​​of the several measuring points, and the difference between the highest thickness detection value and the lowest thickness detection value is calculated to obtain the thickness difference of the thinned chip.

[0065] S13: Calculate the actual removal rate of the thinned chip based on the average thickness of the thinned chip and the initial thickness of the chip workpiece, and adjust the initial removal rate to the actual removal rate.

[0066] Specifically, after the MES system performs grinding and polishing on the chip workpiece with a set grinding and polishing cycle, the thickness of the thinned chip is detected to obtain the average thickness of the thinned chip. The average thickness of the thinned chip can reflect the thinning effect of the MES system on the chip workpiece, so that the MES system can adjust the grinding and polishing removal rate of the chip workpiece according to the actual processing requirements of the chip workpiece.

[0067] Specifically, the calculation formula of the actual removal rate is:

[0068] C2=(T2-T4) / S1;

[0069] Among them, C2 is the actual removal rate, T2 is the initial thickness of the chip workpiece, T4 is the average thickness of the thinned workpiece, and S1 is the time that the MES system spends on grinding and polishing the chip workpiece in a single grinding and polishing cycle.

[0070] Furthermore, the MES system can record the actual grinding and polishing time of the chip workpiece by the grinding disc device according to the contact feedback between the grinding disc device and the chip workpiece, thereby improving the accuracy of calculating the actual grinding and polishing removal rate of the chip workpiece.

[0071] S14: Calculate the comparative analysis value of the chip workpiece in the same grinding and polishing cycle according to the thickness difference, compare the comparative analysis value with the preset standard threshold, generate a chiller temperature adjustment value according to the comparison result, and adjust the operating temperature of the chiller based on the chiller temperature adjustment value.

[0072] Specifically, the thickness difference is within the TTV chip of the thinned chip, and TTV (Total Thickness Variation) is the difference between the maximum thickness value and the minimum thickness value of the thinned chip, that is, the thickness difference of the thinned chip. Based on the thickness difference, the uniformity of the grinding and polishing of the thinned chip can be measured.

[0073] Specifically, at least three chip workpieces are placed in the same grinding and polishing plate for simultaneous grinding and polishing. According to the order of grinding and polishing, the thickness difference of the chip workpiece positioned first for grinding and polishing and the thickness difference of the chip workpiece positioned last for grinding and polishing are calculated to obtain a comparative analysis value, and the temperature of the chiller is adjusted based on the comparative analysis value.

[0074] Furthermore, when the comparative analysis value is positive and the absolute value of the comparative analysis value is greater than the preset standard threshold, it means that the temperature of the water chiller is too low, and the cooling effect on the polishing disc is large, resulting in insufficient heat generation due to the contact between the polishing disc and the chip workpiece, affecting the polishing effect of the polishing disc on the chip workpiece, causing the polishing amount of the chip workpiece to decrease during the long-term polishing of the chip workpiece by the polishing disc, resulting in a decrease in the TTV on-chip value of a single chip workpiece, and the cooling temperature of the water chiller needs to be increased, that is, the temperature of the water chiller needs to be increased.

[0075] Furthermore, when the comparative analysis value is negative and the absolute value of the comparative analysis value is greater than the preset standard threshold, it means that the temperature of the water chiller is too high and the cooling effect on the grinding and polishing disc is insufficient, which causes the grinding and polishing disc to heat up seriously during the long-term grinding and polishing of the chip workpiece, resulting in a large amount of grinding and polishing removal of the chip workpiece by the grinding and polishing disc, which increases the TTV on-chip value of a single chip workpiece. It is necessary to lower the cooling temperature of the water chiller, that is, to cool the water chiller, so as to reduce the thickness difference between the grinding and polishing processes of each chip workpiece.

[0076] S15: Check whether the thickness average meets the model size requirements of the chip workpiece. If so, obtain the chip product. If not, repeat steps S12 to S15.

[0077] Specifically, a plurality of measuring points are set on the top surface of the chip workpiece, and the thickness of the chip workpiece is detected and recorded based on different measuring points. The average value of the thickness detection values ​​obtained by the detection of several measuring points is calculated to obtain the chip thickness after the chip workpiece is ground and polished, and to detect whether the chip thickness meets the model size requirements of the chip workpiece. In this embodiment, the detection conditions of the thickness of the chip workpiece after grinding and polishing are:

[0078] T4-0.5μm≤T3≤T4+0.5μm.

[0079] Among them, T4 is the average thickness of the thinned workpiece, and T3 is the standard thickness value of the model size corresponding to the chip workpiece.

[0080] An embodiment of the present invention provides a method for controlling the thinning processing of an LED chip. During the thinning processing of the LED chip, the grinding and polishing thinning processing of the chip workpiece is divided into multiple grinding and polishing processing cycles, and the grinding and polishing removal rate of the next grinding and polishing cycle is adjusted based on the actual grinding and polishing removal rate of the current grinding and polishing cycle; by real-time detection of the TTV chip value of the chip workpiece in each grinding and polishing cycle, the temperature of the chiller is adjusted according to the grinding and polishing processing conditions of the chip workpiece, so that the grinding and polishing system can independently perform dynamic adjustment of the grinding and polishing removal rate and real-time adaptive adjustment of the temperature of the chiller, thereby improving the grinding and polishing thinning processing effect of the chip workpiece.

[0081] Embodiment 2:

[0082] Figure 2 The flowchart of the thinning process control method of the LED chip in the embodiment of the present invention is shown. The thinning process control method of the LED chip includes:

[0083] S101: measuring the initial thickness of the chip workpiece.

[0084] The chip workpiece is placed in the processing area of ​​the grinding and polishing equipment, and a plurality of the chip workpieces are placed in the same grinding and polishing plate, so that the grinding and polishing equipment can perform grinding and polishing thinning processing on each chip workpiece in turn within the same grinding and polishing cycle.

[0085] In this embodiment, the grinding and polishing processing of the chip workpiece is automatically managed and controlled based on the MES system. By setting up a thickness measuring mechanism, the thickness of the chip workpiece is detected based on laser ranging. The initial thickness data of several chip workpieces in the polishing disk of the grinding and polishing equipment are used to enable the MES system to set up the grinding and polishing processing of the chip workpiece.

[0086] S102: Setting an initial removal rate.

[0087] The thickness measurement component of the MES system detects the initial thickness of the chip workpiece, and the initial removal rate is set based on the initial thickness of the chip workpiece and the thickness data of the chip finished product. The calculation formula of the initial removal rate is:

[0088] C1 = (T2-T3) / 10min;

[0089] Wherein, C1 is the initial removal rate, T2 is the initial thickness of the chip workpiece, T3 is the thickness data of the finished chip product, and 10min is the processing time corresponding to the chip workpiece.

[0090] The MES system sets a repairing cycle according to the model and size of the chip workpiece, grinds and polishes the chip workpiece at an initial removal rate, and grinds the chip workpiece according to a preset repairing cycle so that the size of the chip workpiece can meet the chip processing requirements.

[0091] S103: Setting the grinding and polishing cycle.

[0092] Specifically, according to the chip model sizes corresponding to several chip workpieces in the grinding and polishing equipment, the MES system matches the chip finished product thickness required for the corresponding chip model size in the database, and sets the grinding and polishing cycle of the grinding and polishing equipment in combination with the initial thickness of each chip workpiece. By setting multiple grinding and polishing cycles, several chip workpieces are ground and polished for thinning, so that the chip workpieces can meet the chip finished product thickness requirements of the corresponding chip model size.

[0093] S104: Calculate the actual removal rate.

[0094] Specifically, after the MES system performs grinding and polishing on the chip workpiece with a set grinding and polishing cycle, the thickness of the thinned chip is detected to obtain the average thickness of the thinned chip. The average thickness of the thinned chip can reflect the thinning effect of the MES system on the chip workpiece, so that the MES system can adjust the grinding and polishing removal rate of the chip workpiece according to the actual processing requirements of the chip workpiece.

[0095] Specifically, the calculation formula of the actual removal rate is:

[0096] C2=(T2-T4) / S1;

[0097] Among them, C2 is the actual removal rate, T2 is the initial thickness of the chip workpiece, T4 is the average thickness of the thinned workpiece, and S1 is the time that the MES system spends on grinding and polishing the chip workpiece in a single grinding and polishing cycle.

[0098] Furthermore, the MES system can record the actual grinding and polishing time of the chip workpiece by the grinding disc device according to the contact feedback between the grinding disc device and the chip workpiece, thereby improving the accuracy of calculating the actual grinding and polishing removal rate of the chip workpiece.

[0099] S105: Adjusting the polishing removal rate of the next polishing cycle.

[0100] Specifically, the actual removal rate calculated and obtained in the current polishing cycle is set as the polishing removal rate of the next polishing cycle. When the polishing equipment completes a polishing cycle on the chip workpiece, the MES system detects the average thickness of the thinned chip after polishing based on the thickness measurement mechanism, and calculates the actual removal rate of each chip workpiece based on the thickness average. By setting the actual removal rate as the polishing removal rate of the next polishing cycle, the accuracy of the polishing equipment on the chip workpiece can be effectively improved.

[0101] S106: Detect TTV inside the chip workpiece.

[0102] Specifically, after the grinding and polishing equipment completes the grinding and polishing of the chip workpiece, the thickness of the chip workpiece is measured at several measuring points based on the thickness measuring mechanism. Based on the measured thickness of each measuring point, the measured maximum value and the measured minimum value are extracted from the measured thickness values ​​of multiple measuring points of the same chip workpiece, and the difference between the measured maximum value and the measured minimum value is used as the TTV chip of the chip workpiece.

[0103] Furthermore, by detecting and acquiring the TTV in-chip data of each chip workpiece, the polishing uniformity of several chip workpieces in the polishing equipment can be detected, thereby improving the accuracy of the polishing of the chip workpiece by the polishing equipment, thereby improving the polishing and thinning processing quality of the chip workpiece.

[0104] S107: Calculate the comparative analysis value.

[0105] According to the grinding and polishing sequence of several chip workpieces placed in the grinding and polishing equipment, the thickness difference of the chip workpiece located in the first grinding and polishing process and the thickness difference of the chip workpiece located in the last grinding and polishing process are calculated to obtain a comparative analysis value, and the temperature of the chiller is adjusted based on the comparative analysis value.

[0106] Furthermore, when the comparative analysis value is positive and the absolute value of the comparative analysis value is greater than the preset standard threshold, it means that the temperature of the water chiller is too low, and the cooling effect on the polishing disc is large, resulting in insufficient heat generation due to the contact between the polishing disc and the chip workpiece, affecting the polishing effect of the polishing disc on the chip workpiece, causing the polishing amount of the chip workpiece to decrease during the long-term polishing of the chip workpiece by the polishing disc, resulting in a decrease in the TTV on-chip value of a single chip workpiece, and the cooling temperature of the water chiller needs to be increased, that is, the temperature of the water chiller needs to be increased.

[0107] Furthermore, when the comparative analysis value is negative and the absolute value of the comparative analysis value is greater than the preset standard threshold, it means that the temperature of the water chiller is too high and the cooling effect on the grinding and polishing disc is insufficient, which causes the grinding and polishing disc to heat up seriously during the long-term grinding and polishing of the chip workpiece, resulting in a large amount of grinding and polishing removal of the chip workpiece by the grinding and polishing disc, which increases the TTV on-chip value of a single chip workpiece. It is necessary to lower the cooling temperature of the water chiller, that is, to cool the water chiller, so as to reduce the thickness difference between the grinding and polishing processes of each chip workpiece.

[0108] S108: Adjust the operating temperature of the chiller.

[0109] Specifically, the MES system is internally provided with corresponding adjustment relationship data between the temperature of the water chiller and the comparative analysis value, so that the MES system can query the temperature adjustment scheme of the water chiller according to the comparative analysis value and adjust the working temperature of the water chiller in real time.

[0110] Specifically, the adjustment relationship between the comparative analysis value and the operating temperature of the chiller is as follows:

[0111] Table 1: Comparison table of working temperature adjustment relationships of chillers

[0112] Comparative analysis value Chiller temperature adjustment (℃) Comparative analysis value Chiller temperature adjustment (℃) 8 2 -8 -2 10 4 -10 -4 12 6 -12 -6

[0113] According to the comparative analysis value, the difference in the grinding and polishing thickness of the chip workpiece within the same grinding and polishing cycle is obtained, that is, the grinding and polishing uniformity of the chip workpiece by the grinding and polishing equipment is detected, so as to improve the uniformity and reliability of the grinding and polishing of the chip workpiece by the grinding and polishing equipment by controlling the working temperature of the ice water machine.

[0114] Furthermore, the temperature of the water chiller is adjusted based on the comparative analysis value, thereby improving the processing quality of the grinding and polishing equipment on the chip workpiece to meet the grinding and polishing processing requirements of the chip workpiece. Based on the real-time adjustment of the temperature of the water chiller, it can be ensured that the grinding and polishing disc of the grinding and polishing equipment is within the appropriate grinding and polishing working temperature, thereby improving the grinding and polishing quality of the chip workpiece by the grinding and polishing equipment, and at the same time, it can improve the stability of the actual removal rate of the chip workpiece by the grinding and polishing equipment, so that the MES system can make adaptive adjustments according to the actual removal rate of the chip workpiece by the grinding and polishing equipment to meet the grinding and polishing processing requirements of the chip workpiece by the grinding and polishing equipment.

[0115] S109: Detect the completion progress of the grinding and polishing cycle.

[0116] Detect whether the polishing cycle of the chip workpiece in the current polishing device is completed, and count and control the polishing process of the polishing device. In step S103, according to the processing requirements of the chip workpiece, set the number of polishing cycles m required to complete the polishing operation of the chip workpiece, set the count value n, and set n=1. After the polishing device completes the polishing of a single polishing cycle on the chip workpiece, detect n=m. If not, set n=n+1, and perform the next polishing cycle on the chip workpiece, and repeat steps S104 to S109;

[0117] If n=m, go to step S110.

[0118] S110: Detecting the thinning thickness of the chip workpiece.

[0119] Specifically, a plurality of measuring points are set on the top surface of the chip workpiece, and the thickness of the chip workpiece is detected and recorded based on different measuring points. The average value of the thickness detection values ​​obtained by the detection of several measuring points is calculated to obtain the chip thickness after the chip workpiece is ground and polished, and to detect whether the chip thickness meets the model size requirements of the chip workpiece. In this embodiment, the detection conditions of the thickness of the chip workpiece after grinding and polishing are:

[0120] T4-0.5μm≤T3≤T4+0.5μm.

[0121] Among them, T4 is the average thickness of the thinned workpiece, and T3 is the standard thickness value of the model size corresponding to the chip workpiece.

[0122] Furthermore, if the thickness of the chip workpiece after grinding and polishing is less than the standard thickness value of the model size corresponding to the chip workpiece, and the thickness of the chip workpiece after grinding and polishing does not meet the detection conditions, the MES system will mark the chip workpiece as an unqualified product and collect and organize the unqualified products so that relevant technicians can recycle them.

[0123] If the thickness of the chip workpiece after grinding and polishing is greater than the standard thickness value of the model size corresponding to the chip workpiece, and the thickness of the chip workpiece after grinding and polishing does not meet the detection conditions, the MES system drives the grinding and polishing equipment to perform grinding and polishing corrections on the chip workpiece to obtain a finished chip.

[0124] S111: Output chip finished product.

[0125] The chip workpiece that has completed the grinding and polishing process is set as a chip finished product, and the chip finished product is output based on the MES system.

[0126] An embodiment of the present invention provides a method for controlling the thinning processing of an LED chip. During the thinning processing of the LED chip, the grinding and polishing thinning processing of the chip workpiece is divided into multiple grinding and polishing processing cycles, and the grinding and polishing removal rate of the next grinding and polishing cycle is adjusted based on the actual grinding and polishing removal rate of the current grinding and polishing cycle; by real-time detection of the TTV chip value of the chip workpiece in each grinding and polishing cycle, the temperature of the chiller is adjusted according to the grinding and polishing processing conditions of the chip workpiece, so that the grinding and polishing system can independently perform dynamic adjustment of the grinding and polishing removal rate and real-time adaptive adjustment of the temperature of the chiller, thereby improving the grinding and polishing thinning processing effect of the chip workpiece.

[0127] A person skilled in the art may understand that all or part of the steps in the various methods of the above embodiments may be completed by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the storage medium may include: a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk, etc.

[0128] In addition, the embodiments of the present invention are described in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A processing control method for thinning an LED chip, characterized in that: The control method comprises: S11: obtaining the model size of the chip workpiece and the initial thickness of the chip workpiece, and setting the initial removal rate according to the model size of the chip workpiece; S12: performing thinning processing on the chip workpiece based on the initial removal rate, obtaining the thinned processed chip, performing multi-point thickness detection on the thinned processed chip, obtaining a plurality of measured thickness values ​​of the thinned processed chip, and calculating the thickness average and thickness difference of the thinned processed chip based on the plurality of measured thickness values; S13: Calculate the actual removal rate of the thinned chip by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and adjust the initial removal rate to the actual removal rate; S14: calculating a comparative analysis value of the chip workpiece in the same grinding and polishing cycle according to the thickness difference, comparing the comparative analysis value with a preset standard threshold, generating a chiller temperature adjustment value according to the comparison result, and adjusting the operating temperature of the chiller based on the chiller temperature adjustment value; S15: Check whether the thickness average meets the model size requirements of the chip workpiece. If so, obtain the chip product. If not, repeat steps S12 to S15.

2. The LED chip thinning processing control method according to claim 1, characterized in that: The step of obtaining the size of the chip workpiece and the initial thickness of the chip workpiece and setting the initial removal rate according to the size of the chip workpiece includes: Place the chip workpiece in the repairing equipment and detect the model and size of the chip workpiece based on the MES system; According to the model and size of the chip workpiece, the thickness data of the finished chip product after the chip workpiece has been thinned is queried in the MES system.

3. The LED chip thinning processing control method according to claim 2, characterized in that: The calculation formula of the initial removal rate is: C1 = (T2-T3) / 10min; Wherein, C1 is the initial removal rate, T2 is the initial thickness of the chip workpiece, T3 is the thickness data of the finished chip product, and 10min is the processing time corresponding to the chip workpiece.

4. The LED chip thinning processing control method according to claim 1, characterized in that: The method of thinning the chip workpiece based on the initial removal rate, obtaining the thinned chip, performing multi-point thickness detection on the thinned chip, obtaining a plurality of measured thickness values ​​of the thinned chip, and calculating the thickness mean and thickness difference of the thinned chip based on the plurality of measured thickness values ​​includes: Setting a plurality of measuring points on the thinned chip, wherein the plurality of measuring points are arranged to be evenly distributed, or the plurality of measuring points are arranged to be randomly distributed; Furthermore, the distribution range of the plurality of measuring points completely covers the top surface of the thinned chip.

5. The LED chip thinning processing control method according to claim 4, characterized in that: The multi-point thickness detection of the thinned chip to obtain a plurality of measured thickness values ​​of the thinned chip includes: Placing the thinned chip on the detection position of the thickness detection mechanism, and performing laser ranging operation on the table surface of the carrier where the thinned chip is located through the thickness detection mechanism; Recording the distance between the thickness measuring mechanism and the table surface of the carrying platform, and using the distance between the thickness measuring mechanism and the table surface of the carrying platform as a reference distance; Laser ranging operation is performed on each measuring point of the thinned chip, and based on the detection distance obtained by measuring each measuring point, difference calculation is performed in combination with the reference distance to obtain thickness detection data of each measuring point of the thinned chip.

6. The LED chip thinning processing control method according to claim 1, characterized in that: The step of calculating the actual removal rate of the thinned chip by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and adjusting the initial removal rate to the actual removal rate comprises: The calculation formula of the actual removal rate is: C2=(T2-T4) / S1; Among them, C2 is the actual removal rate, T2 is the initial thickness of the chip workpiece, T4 is the average thickness of the thinned workpiece, and S1 is the time that the MES system spends on grinding and polishing the chip workpiece in a single grinding and polishing cycle.

7. The LED chip thinning processing control method according to claim 6, characterized in that: The step of calculating the actual removal rate of the thinned chip by combining the average thickness of the thinned chip and the initial thickness of the chip workpiece, and adjusting the initial removal rate to the actual removal rate also includes: The MES system records the actual grinding and polishing time of the chip workpiece by the grinding disc equipment according to the contact feedback between the grinding disc equipment and the chip workpiece.

8. The LED chip thinning processing control method according to claim 1, characterized in that: The step of calculating a comparative analysis value of a chip workpiece in the same grinding and polishing cycle according to the thickness difference, comparing the comparative analysis value with a preset standard threshold, generating a chiller temperature adjustment value according to the comparison result, and adjusting the chiller operating temperature based on the chiller temperature adjustment value includes: Obtaining measured thickness values ​​of a plurality of measuring points of the thinned chip according to the thickness measuring mechanism, and extracting a maximum thickness value and a minimum thickness value of the thinned chip from the measured thickness values ​​of the plurality of measuring points; The maximum thickness value and the minimum thickness value of the thinned chip are calculated to obtain the difference between the maximum thickness value and the minimum thickness value of the thinned chip, and the difference is marked as the thickness difference.

9. The LED chip thinning processing control method according to claim 1, characterized in that: The step of calculating the comparative analysis value of the chip workpiece in the same grinding and polishing cycle according to the thickness difference, comparing the comparative analysis value with a preset standard threshold, generating a chiller temperature adjustment value according to the comparison result, and adjusting the working temperature of the chiller based on the chiller temperature adjustment value also includes: According to the order of grinding and polishing, the thickness difference of the chip workpiece that is first ground and polished is calculated by difference with the thickness difference of the chip workpiece that is last ground and polished to obtain a comparative analysis value, and the temperature of the chiller is adjusted based on the comparative analysis value.

10. The LED chip thinning processing control method according to claim 9, characterized in that: The adjusting the temperature of the ice machine based on the comparative analysis value comprises: When the comparative analysis value is a positive value, and the absolute value of the comparative analysis value is greater than the preset standard threshold, the cooling temperature of the water chiller is increased, that is, the water chiller is heated up; When the comparative analysis value is a negative value, and the absolute value of the comparative analysis value is greater than a preset standard threshold, the cooling temperature of the water chiller is lowered, that is, the water chiller is temperature-lowered.

Images