Rapid temperature stabilization control system for crystal pulling and control method thereof

Abstract

The invention provides a rapid temperature stabilization control system for crystal pulling and a control method thereof, and the control system comprises a detection module which is used for detecting the temperature in a crucible; the first heating module is arranged at the bottom of the crucible and used for heating the bottom of the crucible; the second heating module is arranged on the periphery of the crucible and used for heating the periphery of the crucible; the third heating module is arranged in the crucible and used for heating the interior of the crucible; and the heating control module is electrically connected with the first heating module, the second heating module, the third heating module and the detection module. According to the rapid temperature stabilization control system for crystal pulling and the control method of the rapid temperature stabilization control system, rapid heating and melting of materials of the crystal pulling furnace and rapid temperature stabilization in the crystal pulling process are achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal pulling production process, and in particular to a rapid temperature stabilization control system for crystal pulling and a control method thereof. Background Art

[0002] The manufacturing of chips starts with single crystal silicon; an important process for the production of single crystal silicon is crystal pulling; crystal pulling generally uses a crystal pulling furnace. A crystal pulling furnace is a device that heats and melts polycrystalline silicon and other materials in an inert gas environment and then uses the direct pulling method to grow single crystals; its working process mainly includes: batching, melting, crystal pulling, and finishing steps; in the production process, rapid temperature stabilization technology can significantly reduce the preparation time from melting silicon to starting single crystal growth, thereby improving production efficiency. This is particularly important for achieving large-scale production. Ensure the quality of single crystals: Rapid temperature stabilization technology can reduce the problem of uneven crystal growth caused by temperature fluctuations, and help produce single crystal silicon with uniform diameter and complete crystal structure. Optimize energy consumption: Rapid temperature stabilization technology can reduce heating time and energy consumption, because the melt reaches the working temperature in a shorter time, thereby reducing energy consumption. How to achieve rapid temperature stabilization has always been the direction of improvement of crystal pulling technology. Summary of the invention

[0003] One of the purposes of the present invention is to provide a rapid temperature stabilization control system and a control method for crystal pulling, so as to achieve rapid heating and melting of materials in a crystal pulling furnace and rapid temperature stabilization during the crystal pulling process.

[0004] An embodiment of the present invention provides a rapid temperature stabilization control system for crystal pulling, comprising:

[0005] A detection module, used for detecting the temperature in the crucible;

[0006] A first heating module is arranged at the bottom of the crucible and is used to heat the bottom of the crucible;

[0007] A second heating module is arranged at the periphery of the crucible and is used to heat the periphery of the crucible;

[0008] A third heating module is disposed in the crucible and is used to heat the interior of the crucible;

[0009] The heating control module is electrically connected to the first heating module, the second heating module, the third heating module and the detection module respectively.

[0010] Preferably, the detection module comprises:

[0011] A first detection unit is used to detect the temperature of the bottom of the crucible;

[0012] A second detection unit is used to detect the temperature of the outer periphery of the crucible;

[0013] The third detection unit is used to detect the temperature in the crucible pot.

[0014] Preferably, the third detection unit comprises: a plurality of detection sensors, which are respectively arranged at different depths in the crucible pot and are used to detect the temperatures at different depths in the crucible pot.

[0015] Preferably, the third heating module comprises: a plurality of telescopic heating units, which respectively extend to different depths in the crucible pot to heat the crucible pot during initial heating.

[0016] Preferably, the telescopic heating unit comprises:

[0017] A first telescopic structure, one end of which is fixedly connected to the side wall of the main furnace chamber, and the other end of which is extended to a preset position above the crucible;

[0018] A second telescopic structure, one end of which is fixedly connected to the end of the first telescopic structure extending above the crucible, and the other end of which extends into the pot of the crucible;

[0019] The heating device is arranged at one end of the second telescopic structure extending into the pot of the crucible.

[0020] Preferably, the rapid temperature stabilization control system for crystal pulling further comprises:

[0021] The image acquisition module is arranged on the side wall of the main furnace chamber and is electrically connected to the heating control module, and is used for capturing images inside the crucible.

[0022] The present invention also provides a rapid temperature stabilization control method for crystal pulling, which is applied to any of the above-mentioned rapid temperature stabilization control systems for crystal pulling, comprising:

[0023] When a discharge control instruction of the crystal pulling furnace is monitored, the first telescopic structure of each telescopic heating unit of the third heating module is controlled to extend to a preset position above the crucible, and the second telescopic structure is controlled to extend into the pot of the crucible, so that the heating devices of each telescopic heating unit are located at different depths in the pot of the crucible;

[0024] When the crystal pulling furnace starts heating instructions, an image acquisition module is used to capture an image in the crucible, the image is analyzed, and the depth corresponding to each heating device is adjusted based on the analysis result;

[0025] Controlling the first heating module, the second heating module and the third heating module to work in their respective corresponding preset first modes;

[0026] When any of the temperatures detected by the first detection unit, the second detection unit, and the third detection unit reaches a corresponding preset temperature threshold; the second telescopic mechanism is controlled to contract, the first telescopic mechanism is controlled to contract, and the heating device is removed from the crucible;

[0027] The first heating module and the second heating module are controlled to work in their respective corresponding preset second modes, and the third heating module is controlled to stop working.

[0028] Preferably, the rapid temperature stabilization control method for crystal pulling further comprises:

[0029] When crystal pulling starts, the first heating module and the second heating module are controlled to work in their respective corresponding preset third modes.

[0030] Preferably, analyzing the image and adjusting the depth corresponding to each heating device based on the analysis result includes:

[0031] Matching the image with the configuration images corresponding to each control set in the pre-configured control library;

[0032] Extracting a control set corresponding to a configuration image matching the image in a control library;

[0033] According to the control set, the corresponding depth of each heating device is determined and adjusted.

[0034] Preferably, the rapid temperature stabilization control method for crystal pulling further comprises:

[0035] The image is tracked and analyzed, and when the material in the crucible changes from solid to liquid, the corresponding depth of the heating device is adjusted again based on the control library.

[0036] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the written description and the accompanying drawings.

[0037] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0039] Figure 1 A schematic diagram of a rapid temperature stabilization control system for crystal pulling according to an embodiment of the present invention;

[0040] Figure 2 Schematic diagram of a telescopic heating unit in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0042] Example 1

[0043] The embodiment of the present invention provides a rapid temperature stabilization control system for crystal pulling, such as Figure 1 and Figure 2 As shown, including:

[0044] Detection module 1, used to detect the temperature in the crucible;

[0045] A first heating module 2, arranged at the bottom of the crucible, for heating the bottom of the crucible;

[0046] A second heating module 3 is arranged at the periphery of the crucible and is used to heat the periphery of the crucible;

[0047] A third heating module 4 is arranged in the crucible and is used to heat the inside of the crucible;

[0048] The heating control module 5 is electrically connected to the first heating module 2 , the second heating module 3 , the third heating module 4 and the detection module 1 , respectively.

[0049] Wherein, the detection module 1 comprises:

[0050] A first detection unit is used to detect the temperature of the bottom of the crucible;

[0051] A second detection unit is used to detect the temperature of the outer periphery of the crucible;

[0052] The third detection unit is used to detect the temperature in the crucible pot.

[0053] Wherein, the third detection unit comprises: a plurality of detection sensors, which are respectively arranged at different depths in the crucible pot and are used to detect the temperatures at different depths in the crucible pot.

[0054] The third heating module 4 comprises: a plurality of retractable heating units, which respectively extend to different depths in the crucible pot to heat the crucible pot during initial heating.

[0055] Wherein, the telescopic heating unit comprises:

[0056] A first telescopic structure, one end of which is fixedly connected to the side wall of the main furnace chamber, and the other end of which is extended to a preset position above the crucible;

[0057] A second telescopic structure, one end of which is fixedly connected to the end of the first telescopic structure extending above the crucible, and the other end of which extends into the pot of the crucible;

[0058] The heating device is arranged at one end of the second telescopic structure extending into the pot of the crucible.

[0059] The control method corresponding to the above-mentioned rapid temperature stabilization control system for crystal pulling includes: when a discharge control instruction of a crystal pulling furnace is monitored, controlling the first telescopic structure of each telescopic heating unit of the third heating module to extend to a preset position above the crucible, controlling the second telescopic structure to extend into the pot of the crucible, so that the heating devices of each telescopic heating unit are located at different depths in the pot of the crucible;

[0060] When a heating start instruction of the crystal pulling furnace is detected, the first heating module, the second heating module and the third heating module are controlled to work in their respective corresponding preset first modes;

[0061] When any of the temperatures detected by the first detection unit, the second detection unit, and the third detection unit reaches a corresponding preset temperature threshold; the second telescopic mechanism is controlled to contract, the first telescopic mechanism is controlled to contract, and the heating device is removed from the crucible;

[0062] The first heating module and the second heating module are controlled to work in their respective corresponding preset second modes, and the third heating module is controlled to stop working.

[0063] The first heating module and the second heating module are controlled separately to ensure that they are operated at different powers in the temperature stabilization link, so as to ensure that the temperature distribution in the crucible can reach the pre-configured state, the temperature is uniform or the temperature can decrease from the surface to the bottom in a gradient; in addition, the third heating module is configured as multiple (more than 2) can also achieve a gradient situation from the initial stage of heating;

[0064] After the application of rapid temperature stabilization in the crystal pulling process, production efficiency can be improved: the preparation time from melting silicon to starting single crystal growth can be significantly reduced, thereby improving production efficiency. This is particularly important for achieving large-scale production. Ensure the quality of single crystals: Rapid temperature stabilization technology can reduce the problem of uneven crystal growth caused by temperature fluctuations, and help produce single crystal silicon with uniform diameter and complete crystal structure. Optimize energy consumption: Rapid temperature stabilization technology can reduce heating time and energy consumption, because the melt reaches the working temperature in a shorter time, thereby reducing energy consumption. Improve equipment utilization: Rapid temperature stabilization technology enables the crystal furnace to complete a growth cycle in a short time, which helps to improve equipment utilization and production rhythm. Reduce thermal stress: Rapid temperature stabilization technology can reduce the thermal stress of silicon melt and single crystal during temperature changes, thereby reducing the risk of crystal cracking and equipment damage. Control the thermal field: Through rapid temperature stabilization technology, the thermal field distribution can be controlled more accurately to ensure the temperature uniformity of the melt and crystal, which is crucial for growing high-quality single crystal silicon.

[0065] Example 2

[0066] The rapid temperature stabilization control system for crystal pulling provided by the present invention comprises:

[0067] A detection module, used for detecting the temperature in the crucible;

[0068] A first heating module is arranged at the bottom of the crucible and is used to heat the bottom of the crucible;

[0069] A second heating module is arranged at the periphery of the crucible and is used to heat the periphery of the crucible;

[0070] A third heating module is disposed in the crucible and is used to heat the interior of the crucible;

[0071] A heating control module is electrically connected to the first heating module, the second heating module, the third heating module and the detection module respectively;

[0072] The image acquisition module is arranged on the side wall of the main furnace chamber and is electrically connected to the heating control module, and is used for capturing images inside the crucible.

[0073] Wherein, the detection module includes:

[0074] A first detection unit is used to detect the temperature of the bottom of the crucible;

[0075] A second detection unit is used to detect the temperature of the outer periphery of the crucible;

[0076] The third detection unit is used to detect the temperature in the crucible pot.

[0077] The third detection unit includes: a plurality of detection sensors, which are respectively arranged at different depths in the crucible pot, and are used to detect the temperature at different depths in the crucible pot. That is, the detection sensors are arranged in an array from top to bottom;

[0078] Wherein, the third heating module comprises: a plurality of telescopic heating units, which respectively extend to different depths in the crucible pot to heat the crucible pot during initial heating.

[0079] Wherein, the telescopic heating unit comprises:

[0080] A first telescopic structure, one end of which is fixedly connected to the side wall of the main furnace chamber, and the other end of which is extended to a preset position above the crucible;

[0081] A second telescopic structure, one end of which is fixedly connected to the end of the first telescopic structure extending above the crucible, and the other end of which extends into the pot of the crucible;

[0082] The heating device is arranged at one end of the second telescopic structure extending into the pot of the crucible.

[0083] Corresponding to this embodiment, the present invention further provides a rapid temperature stabilization control method for crystal pulling, comprising:

[0084] When a discharge control instruction of the crystal pulling furnace is monitored, the first telescopic structure of each telescopic heating unit of the third heating module is controlled to extend to a preset position above the crucible, and the second telescopic structure is controlled to extend into the pot of the crucible, so that the heating devices of each telescopic heating unit are located at different depths in the pot of the crucible;

[0085] When the crystal pulling furnace starts heating instructions, an image acquisition module is used to capture an image in the crucible, the image is analyzed, and the depth corresponding to each heating device is adjusted based on the analysis result;

[0086] Controlling the first heating module, the second heating module and the third heating module to work in their respective corresponding preset first modes; each heating module heats according to the corresponding first mode configured therein, wherein the first mode is that each heating module heats the material in the crucible at the initial stage of heating the material in the crucible so as to melt the material in the crucible quickly;

[0087] When any of the temperatures detected by the first detection unit, the second detection unit, and the third detection unit reaches a corresponding preset temperature threshold; the second telescopic mechanism is controlled to contract, the first telescopic mechanism is controlled to contract, and the heating device is removed from the crucible; wherein, the temperature thresholds corresponding to the temperatures detected by the first detection unit, the second detection unit, and the third detection unit are not the same, but when any of them reaches the temperature threshold, it can be considered that the rapid heating stage of the crucible has been completed; therefore, the third heating module in the crucible needs to be removed to avoid its influence on the crystal pulling action;

[0088] The first heating module and the second heating module are controlled to work in their respective corresponding preset second modes, and the third heating module is controlled to stop working. After the initial heating stage is completed, the temperature stabilization stage before crystal pulling begins. At this time, the first heating module and the second heating module are operated in their respective corresponding second modes to maintain the temperature in the crucible stable. In addition, the second heating module can be layered from top to bottom to form multiple heating devices to achieve layered heating;

[0089] Since the crystal pulling action has a certain influence on the temperature of the surface layer, mainly reducing the temperature of the surface layer, the rapid temperature stabilization control method for crystal pulling of this embodiment further includes:

[0090] When crystal pulling begins, the first heating module and the second heating module are controlled to work in their respective corresponding preset third modes. By switching the working modes of the first heating module and the second heating module to the third mode, a stable temperature can be achieved during the crystal pulling process. In addition, in the third working mode, the heating control module will adjust the working power of the first heating module and the second heating module according to the action parameters of the crystal pulling, which can be specifically adjusted through a pre-configured power and action parameter comparison table; in the power and action parameter comparison table, the action parameters correspond to the working power one by one; wherein the action parameters include: crucible rotation speed, crystal pulling head rotation speed, cross-sectional area of ​​the seed crystal, lifting speed of the crystal pulling head, etc.;

[0091] In addition, in order to optimize the heating efficiency and heating position of the third heating module during the rapid heating process and ensure that a gradient temperature distribution from the surface to the bottom can be easily formed, the image is analyzed, and the corresponding depth of each heating device is adjusted based on the analysis results, including:

[0092] Matching the image with the configuration images corresponding to each control set in the pre-configured control library;

[0093] Extracting a control set corresponding to a configuration image matching the image in a control library;

[0094] According to the control set, the corresponding depth of each heating device is determined and adjusted.

[0095] Since the liquid level will drop when the solid turns into liquid, the rapid temperature stabilization control method for crystal pulling also includes:

[0096] The image is tracked and analyzed, and when the material in the crucible changes from solid to liquid, the corresponding depth of the heating device is adjusted again based on the control library.

[0097] The above-mentioned control library for position adjustment in the initial heating stage is constructed in advance. In order to improve the matching efficiency, the solid configuration image and the liquid configuration image are divided into a sub-library respectively. When calling, only the corresponding sub-library needs to be called. In the two sub-libraries, the configuration images and the control sets are associated one-to-one. The control set is called through the matching between the images. The control set stipulates the elongation of the second telescopic structure of each telescopic heating unit, thereby realizing the accurate determination of layered heating.

[0098] Example 3

[0099] The rapid temperature stabilization control system for crystal pulling provided by the present invention comprises:

[0100] A detection module, used for detecting the temperature in the crucible;

[0101] A first heating module is arranged at the bottom of the crucible and is used to heat the bottom of the crucible;

[0102] A second heating module is arranged at the periphery of the crucible and is used to heat the periphery of the crucible;

[0103] A third heating module is disposed in the crucible and is used to heat the interior of the crucible;

[0104] A heating control module is electrically connected to the first heating module, the second heating module, the third heating module and the detection module respectively;

[0105] The image acquisition module is arranged on the side wall of the main furnace chamber and is electrically connected to the heating control module, and is used for capturing images inside the crucible.

[0106] Wherein, the detection module includes:

[0107] A first detection unit is used to detect the temperature of the bottom of the crucible;

[0108] A second detection unit is used to detect the temperature of the outer periphery of the crucible;

[0109] The third detection unit is used to detect the temperature in the crucible pot.

[0110] The third detection unit includes: a plurality of detection sensors, which are respectively arranged at different depths in the crucible pot, and are used to detect the temperature at different depths in the crucible pot. That is, the detection sensors are arranged in an array from top to bottom;

[0111] Wherein, the third heating module comprises: a plurality of telescopic heating units, which respectively extend to different depths in the crucible pot to heat the crucible pot during initial heating.

[0112] Wherein, the telescopic heating unit comprises:

[0113] A first telescopic structure, one end of which is fixedly connected to the side wall of the main furnace chamber, and the other end of which is extended to a preset position above the crucible;

[0114] A second telescopic structure, one end of which is fixedly connected to the end of the first telescopic structure extending above the crucible, and the other end of which extends into the pot of the crucible;

[0115] The heating device is arranged at one end of the second telescopic structure extending into the pot of the crucible.

[0116] Corresponding to this embodiment, the present invention further provides a rapid temperature stabilization control method for crystal pulling, comprising:

[0117] When a discharge control instruction of the crystal pulling furnace is monitored, the first telescopic structure of each telescopic heating unit of the third heating module is controlled to extend to a preset position above the crucible, and the second telescopic structure is controlled to extend into the pot of the crucible, so that the heating devices of each telescopic heating unit are located at different depths in the pot of the crucible;

[0118] When the crystal pulling furnace starts heating instructions, an image acquisition module is used to capture an image in the crucible, the image is analyzed, and the depth corresponding to each heating device is adjusted based on the analysis result;

[0119] Controlling the first heating module, the second heating module and the third heating module to work in their respective corresponding preset first modes;

[0120] When any of the temperatures detected by the first detection unit, the second detection unit, and the third detection unit reaches a corresponding preset temperature threshold; the second telescopic mechanism is controlled to contract, the first telescopic mechanism is controlled to contract, and the heating device is removed from the crucible; wherein, the temperature thresholds corresponding to the temperatures detected by the first detection unit, the second detection unit, and the third detection unit are not the same, but when any of them reaches the temperature threshold, it can be considered that the rapid heating stage of the crucible has been completed; therefore, the third heating module in the crucible needs to be removed to avoid its influence on the crystal pulling action;

[0121] The first heating module and the second heating module are controlled to work in their respective corresponding preset second modes, and the third heating module is controlled to stop working.

[0122] Since the crystal pulling action has a certain influence on the temperature of the surface layer, mainly reducing the temperature of the surface layer, the rapid temperature stabilization control method for crystal pulling of this embodiment further includes:

[0123] When crystal pulling starts, the first heating module and the second heating module are controlled to work in their respective corresponding preset third modes.

[0124] The image is analyzed, and the depth of each heating device is adjusted based on the analysis result, including:

[0125] Matching the image with the configuration images corresponding to each control set in the pre-configured control library;

[0126] Extracting a control set corresponding to a configuration image matching the image in a control library;

[0127] According to the control set, the corresponding depth of each heating device is determined and adjusted.

[0128] Since the liquid level will drop when the solid turns into liquid, the rapid temperature stabilization control method for crystal pulling also includes:

[0129] The image is tracked and analyzed to determine whether the material in the crucible changes from solid to liquid; if so, the image and the detection data of the third detection unit are comprehensively analyzed, and the corresponding depth of the heating device is adjusted again according to the pre-configured adjustment library.

[0130] During adjustment, this embodiment comprehensively analyzes the detection data of the third unit, further improving the accuracy of the adjustment. Specifically, the steps of comprehensively analyzing the image and the detection data of the third detection unit are: identifying the image to determine the depth parameter of the distance between the liquid surface and the opening of the crucible; parsing the detection data to determine the temperature detection value of each detection unit, arranging them in order according to the depth parameter, the temperature detection value, and the current elongation of each second telescopic structure to form a call data set; calling the corresponding adjustment parameter set from the adjustment library based on the call parameter set; and adjusting the position according to the adjustment amount of each second telescopic structure specified in the adjustment parameter set.

[0131] In addition, during the heating process, the detection data of the first detection unit, the second detection unit and the third detection unit are comprehensively analyzed, and the power of the first heating module, the second heating module and the third heating module are adjusted in real time; specifically, this can be achieved through a pre-configured power correction library, in which a correction analysis set constructed based on the detection data is associated with an adjustment parameter set for power adjustment of each heating device in a one-to-one correspondence; the correction analysis set is constructed by arranging the temperature detection values ​​in the detection data of the first detection unit, the second detection unit and the third detection unit in order; each data in the adjustment parameter set corresponds to the adjustment value of the power of each heating device in order; by adjusting the original power through the adjustment value, monitoring and adjustment of the entire heating process is achieved.

[0132] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A rapid temperature stabilization control system for crystal pulling, characterized in that: include: A detection module, used for detecting the temperature in the crucible; A first heating module is arranged at the bottom of the crucible and is used to heat the bottom of the crucible; A second heating module is arranged at the periphery of the crucible and is used to heat the periphery of the crucible; A third heating module is disposed in the crucible and is used to heat the interior of the crucible; The heating control module is electrically connected to the first heating module, the second heating module, the third heating module and the detection module respectively.

2. The rapid temperature stabilization control system for crystal pulling according to claim 1, characterized in that: The detection module comprises: A first detection unit is used to detect the temperature of the bottom of the crucible; A second detection unit is used to detect the temperature of the outer periphery of the crucible; The third detection unit is used to detect the temperature in the crucible pot.

3. The rapid temperature stabilization control system for crystal pulling according to claim 2, characterized in that: The third detection unit includes: a plurality of detection sensors, which are respectively arranged at different depths in the crucible pot and are used to detect the temperatures at different depths in the crucible pot.

4. The rapid temperature stabilization control system for crystal pulling according to claim 1, characterized in that: The third heating module includes: a plurality of telescopic heating units, which respectively extend to different depths in the crucible pot to heat the crucible pot during initial heating.

5. The rapid temperature stabilization control system for crystal pulling according to claim 4, characterized in that: The telescopic heating unit comprises: A first telescopic structure, one end of which is fixedly connected to the side wall of the main furnace chamber, and the other end of which is extended to a preset position above the crucible; A second telescopic structure, one end of which is fixedly connected to the end of the first telescopic structure extending above the crucible, and the other end of which extends into the pot of the crucible; The heating device is arranged at one end of the second telescopic structure extending into the pot of the crucible.

6. The rapid temperature stabilization control system for crystal pulling according to claim 1, characterized in that: Also includes: The image acquisition module is arranged on the side wall of the main furnace chamber and is electrically connected to the heating control module, and is used for capturing images inside the crucible.

7. A rapid temperature stabilization control method for crystal pulling, applied to the rapid temperature stabilization control system for crystal pulling as claimed in any one of claims 1 to 6, characterized in that: include: When a discharge control instruction of the crystal pulling furnace is monitored, the first telescopic structure of each telescopic heating unit of the third heating module is controlled to extend to a preset position above the crucible, and the second telescopic structure is controlled to extend into the pot of the crucible, so that the heating devices of each telescopic heating unit are located at different depths in the pot of the crucible; When the crystal pulling furnace starts heating instructions, an image acquisition module is used to capture an image in the crucible, the image is analyzed, and the depth corresponding to each heating device is adjusted based on the analysis result; Controlling the first heating module, the second heating module and the third heating module to work in their respective corresponding preset first modes; When any of the temperatures detected by the first detection unit, the second detection unit, and the third detection unit reaches a corresponding preset temperature threshold; the second telescopic mechanism is controlled to contract, the first telescopic mechanism is controlled to contract, and the heating device is removed from the crucible; The first heating module and the second heating module are controlled to work in their respective corresponding preset second modes, and the third heating module is controlled to stop working.

8. The rapid temperature control method for crystal pulling according to claim 7, characterized in that: Also includes: When crystal pulling starts, the first heating module and the second heating module are controlled to work in their respective corresponding preset third modes.

9. The rapid temperature control method for crystal pulling according to claim 7, characterized in that: The image is analyzed, and the depth of each heating device is adjusted based on the analysis result, including: Matching the image with the configuration images corresponding to each control set in the pre-configured control library; Extracting a control set corresponding to a configuration image matching the image in a control library; According to the control set, the corresponding depth of each heating device is determined and adjusted.

10. The rapid temperature control method for crystal pulling according to claim 7, characterized in that: Also includes: The image is tracked and analyzed, and when the material in the crucible changes from solid to liquid, the corresponding depth of the heating device is adjusted again based on the control library.

Images