Current distribution monitoring assembly of integrated gate commutated thyristor

Abstract

The invention provides a current distribution monitoring assembly of an integrated gate commutated thyristor. The current distribution monitoring assembly comprises two double-D Rogowski coil groups which are arranged in a crossed manner; wherein each D Rogowski coil group is composed of two coils which are wound reversely and connected in series, and the direction of a middle boundary of the two coils of one of the two double-D Rogowski coil groups is consistent with the current direction of the integrated gate commutated thyristor; the two ferrite shielding layers are respectively attached to the lower part of each double-D Rogowski coil assembly; and the Hall effect sensor is arranged on the ferrite shielding layer at the bottommost layer. The current distribution monitoring assembly of the integrated gate commutated thyristor provided by the embodiment of the invention has the advantages of small size, high compactness and wide measurement bandwidth.

Description

Technical Field

[0001] The invention relates to the technical field of performance monitoring of integrated gate-commutated thyristors, and in particular to a current distribution monitoring component of an integrated gate-commutated thyristor. Background Art

[0002] Integrated Gate-Commutated Thyristor (IGCT) is a high-voltage and large-capacity power electronic component. With its high operating current, low loss and no need for additional shutdown absorption circuit, it has shown great application potential in the field of flexible DC grid. In a certain power transmission project, the failure rate of power electronic modules was as high as 55.6%, and the mechanical DC circuit breaker used in the project was equipped with 840 IGCTs.

[0003] At present, when configuring the parameters of the circuit breaker, the redundant number of submodules is used to evaluate whether the valve assembly meets the commutation capacity standard; at the same time, the valve assembly has the characteristics of multiple sub-units working together, which makes the fault correlation complicated. When the IGCT is in the on state, there are limitations on the current rise rate di / dt and current cutting capacity that it can withstand. When the DC circuit breaker is activated, the electrical-thermal stress that the IGCT is subjected to at the moment of conducting and cutting off the fault current may cause damage to the device and fail, thereby bringing a greater risk of breaking failure. In addition, even if the DC circuit breaker does not operate, the electrical stress accumulated by the oscillation component for a long time may cause the performance of the IGCT to degrade, thereby reducing its reliability. Summary of the invention

[0004] The present invention provides a current distribution monitoring component for an integrated gate-commutated thyristor, the purpose of which is to solve the following problems in the prior art:

[0005] When monitoring the current distribution of integrated gate-commutated thyristors, it is easy to be interfered by the surrounding electromagnetic fields. Especially for current measurement of electrical equipment in a compact space, it is easy to couple electromagnetic interference from different directions in the space into the measurement probe, thus causing large measurement errors.

[0006] In order to achieve the above objectives, in a first aspect, the present invention provides a current distribution monitoring component for an integrated gate-commutated thyristor, comprising:

[0007] Two double D Rogowski coil groups are arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction of the middle dividing line between the two coils of one of the two double D Rogowski coil groups is consistent with the current direction of the integrated gate commutated thyristor;

[0008] Two ferrite shielding layers are respectively attached to the lower part of each double D Rogowski coil group;

[0009] The Hall Effect sensor is placed on the bottom ferrite shield.

[0010] In some embodiments of the present invention, a current distribution monitoring component of an integrated gate-commutated thyristor further includes:

[0011] The groove is arranged in the bottom ferrite shielding layer and is used for embedding the Hall effect sensor.

[0012] In some embodiments of the present invention, both coils in the double-D Rogowski coil assembly are rectangular.

[0013] In some embodiments of the present invention, when the current in the integrated gate-commutated thyristor is a direct current or a low-frequency current, the Hall effect sensor is used to measure the current distribution in the integrated gate-commutated thyristor.

[0014] In some embodiments of the present invention, when the current in the integrated gate-commutated thyristor is a high-frequency current, the two double-D Rogowski coil groups are used to measure the current distribution in the integrated gate-commutated thyristor.

[0015] In some embodiments of the present invention, input terminals of the two coils are led out from the middle dividing line.

[0016] In some embodiments of the present invention, output terminals of the two coils are led out from the middle dividing line.

[0017] In some embodiments of the present invention, the relative directions of the two coils in the magnetic flux direction are opposite.

[0018] In some embodiments of the present invention, the mutual inductance between the two double-D Rogowski coil groups is zero.

[0019] In some embodiments of the present invention, the coupling coefficient of the two coils in the direction of magnetic flux is a positive number.

[0020] From the above description, it can be seen that an embodiment of the present invention provides a current distribution monitoring component for an integrated gate-commutated thyristor, comprising: two double D Rogowski coil groups arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction of the middle dividing line between the two coils of one double D Rogowski coil group in the two double D Rogowski coil groups is consistent with the current direction of the integrated gate-commutated thyristor; two ferrite shielding layers are respectively attached to the bottom of each double D Rogowski coil group; and a Hall effect sensor is arranged on the bottom ferrite shielding layer.

[0021] The present invention can realize non-invasive measurement of the current distribution of the integrated gate-commutated thyristor. The entire sensor is small in size, compact, and easy to install in actual measurement. Secondly, the current sensor of the present invention has a large measurement bandwidth and can measure the current distribution from direct current to high-frequency current. Finally, the present invention uses a double D Rogowski coil group and a ferrite shield. The double D coil shields external magnetic field interference, which can make the coil output more accurate. In this structure, the double D Rogowski coil group generates a magnetic field perpendicular to the Hall effect sensor, and the Hall effect sensor is insensitive to the magnetic field in this direction, so it has little effect on the measurement of the Hall effect sensor. The ferrite shield added at last can change the surrounding magnetic field distribution, making the magnetic field more concentrated on the ferrite surface, thereby reducing the interference of the external magnetic field on the Hall effect sensor. In summary, the current distribution monitoring component of the integrated gate-commutated thyristor provided by the present invention has good anti-interference ability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 A schematic structural diagram (front view) of a current distribution monitoring assembly of an integrated gate-commutated thyristor provided in an embodiment of the present invention;

[0024] Figure 2 It is a structural schematic diagram of a double D Rogowski coil assembly provided in an embodiment of the present invention;

[0025] Figure 3 It is a structural schematic diagram (back side) of a current distribution monitoring component of an integrated gate-commutated thyristor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0028] In the prior art, commonly used measuring devices for monitoring the current distribution state of integrated gate-commutated thyristors include: Rogowski coil, current transformer (CT), and Hall effect sensor.

[0029] Rogowski coil is an AC current sensor, mainly used to measure high frequency and high current. It is a hollow ring-shaped coil, available in flexible and rigid types, which can be directly put on the conductor to be measured to measure AC current. At present, many current distribution state measurements use PCB Rogowski coils, because this type of coil is relatively small in size, so it is easier to integrate into high-density power electronic systems, and it also helps to reduce stray reactance, thereby expanding its bandwidth. Rogowski coils have the characteristics of a wide frequency response range, fast instantaneous response capability and almost zero phase error, but Rogowski coils are limited in the measurement of low frequency and DC current.

[0030] The Hall effect sensor is a sensor based on the Hall effect that is used to detect the presence and strength of a magnetic field. It is usually composed of a Hall element, an amplifier, and an output circuit. The Hall sensor can measure DC current well, but its bandwidth is usually less than 1MHz to avoid overheating caused by core losses. Its measurement range is also limited by possible core saturation, which often introduces unexpected output offsets. Therefore, the accuracy of the Hall sensor is affected, and coupled with its large size and expensive price, it is not the most suitable choice in actual measurements.

[0031] A current transformer (CT) is a device that converts current in proportion. It can convert large current into standard small current in proportion to achieve standardization and miniaturization of measuring instruments, protection equipment, and automatic control equipment. Its accuracy is satisfactory, and its bandwidth can be as high as tens of MHz. It is only used for AC current sensing (DC cannot be measured). However, it has flux saturation and size limitations, which makes it unsuitable for compact power electronic systems.

[0032] The main problem with the above method is that it is easily interfered by the surrounding electromagnetic field, especially for current measurement of electrical equipment in a compact space, it is easy to couple electromagnetic interference from different directions in the space into the measurement probe, thus causing large measurement errors. Therefore, it is necessary to design a current sensor that is small, compact, and has a wide bandwidth (capable of measuring DC to high-frequency current).

[0033] Based on the above reasons, an embodiment of the present invention provides a specific implementation of a current distribution monitoring component for an integrated gate-commutated thyristor. Figure 1 as well as Figure 2 The current distribution monitoring component of the integrated gate-commutated thyristor specifically includes the following contents:

[0034] Two double D Rogowski coil groups 1 are arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction 3 of the middle dividing line between the two coils of one of the two double D Rogowski coil groups is consistent with the current direction of the integrated gate commutated thyristor;

[0035] Two ferrite shielding layers 2 are respectively attached to the lower part of each double D Rogowski coil group;

[0036] Hall Effect Sensor 3 (See Figure 3 ), which is arranged on the bottom ferrite shielding layer.

[0037] From the above description, it can be seen that an embodiment of the present invention provides a current distribution monitoring component for an integrated gate-commutated thyristor, comprising: two double D Rogowski coil groups arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction of the middle dividing line between the two coils of one double D Rogowski coil group in the two double D Rogowski coil groups is consistent with the current direction of the integrated gate-commutated thyristor; two ferrite shielding layers are respectively attached to the bottom of each double D Rogowski coil group; and a Hall effect sensor is arranged on the bottom ferrite shielding layer.

[0038] The current distribution monitoring component of the integrated gate-commutated thyristor provided in the embodiment of the present invention has the advantages of small size, high compactness, wide measurement bandwidth (capable of measuring direct current to high-frequency current), etc.

[0039] Since the Rogowski coil is usually placed on the IGCT for measurement, which takes up a lot of space and is a non-invasive measurement, it is not easy to install in actual measurement. Therefore, the Rogowski coil can be placed outside the IGCT to achieve non-invasive measurement.

[0040] Considering the interference of surrounding magnetic field, this application adopts double D Rogowski coil. Double D coil PCB diagram as shown below Figure 2 However, the distribution of low frequency and DC current cannot be measured by using only Rogowski coils. Therefore, Hall effect sensors need to be introduced.

[0041] The Hall effect describes that when the current in a conductive material is perpendicular to the direction of the magnetic field, a potential difference will be generated in the perpendicular direction of the material. This potential difference is called the Hall voltage. The main components of the Hall effect sensor include:

[0042] Hall element: This is the core part of the sensor, usually made of semiconductor materials such as gallium arsenide (GaAs) or germanium (Ge). When current passes through the Hall element and is affected by a perpendicular magnetic field, a Hall voltage is generated.

[0043] Signal processing circuit: amplifies the weak Hall voltage generated by the Hall element and converts it into a signal form that is easier to use, such as analog voltage, digital signal or pulse signal.

[0044] Package and housing: protect the Hall element and circuit, provide mechanical strength and environmental protection.

[0045] Classification of Hall Effect Sensors:

[0046] Hall effect sensors can be classified according to their different functions and applications:

[0047] Switch type Hall sensor: The output is a digital signal (high or low level) used to detect the presence or absence of a magnetic field. For example, it is used for position detection, limit switches, etc.

[0048] Linear Hall sensor: Outputs an analog voltage signal proportional to the magnetic field strength and is used to measure magnetic field strength or position changes. For example, it is used for current sensing, speed detection, etc.

[0049] Latching Hall sensor: After detecting a magnetic field, it maintains its output state until an opposite magnetic field is detected to change state.

[0050] The advantages of Hall effect sensors include: non-contact measurement, reduced mechanical wear and contact resistance. High sensitivity and fast response. Simple structure, low cost and high reliability.

[0051] The limitations of Hall effect sensors include: they are sensitive to external magnetic field interference and may require shielding measures. They are sensitive to temperature changes and may require temperature compensation. The output signal is small and requires a high gain amplifier circuit.

[0052] In view of the above-mentioned defects of Rogowski coil measurement, the current distribution monitoring component of the integrated gate-commutated thyristor proposed in the present invention comprises two double-D Rogowski coil groups arranged in a cross-shaped manner. There is no magnetic field coupling between the two double-D Rogowski coil groups, thereby achieving the purpose of decoupling measurement and being able to independently measure the currents in two orthogonal directions. Figure 1 shown.

[0053] In some embodiments of the present invention, each double-D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, which not only establish an electromagnetic coupling relationship with the measured current, but also have coupling magnetic fluxes in opposite directions with external electromagnetic interference, forming a mutual cancellation effect and effectively shielding interference from the external magnetic field.

[0054] In some embodiments of the present invention, it can be understood that two double-D Rogowski coil groups and a Hall element are combined to form a small, compact, wide-bandwidth current sensor. A ferrite shielding layer is attached behind the double-D Rogowski coil group, and then a gap is dug out in the ferrite shielding layer, and a Hall effect sensor is embedded in the gap. Among them, the Hall effect sensor and the double-D Rogowski coil are respectively located on both sides of the ferrite, and output signals respectively, and the two are not connected to each other.

[0055] The measured current and output voltage of each double D Rogowski coil group have the following relationship:

[0056]

[0057] Where i is the measured current, v is the output voltage, t is the measurement time, and M is the inductance of the double D Rogowski coil group.

[0058] In some embodiments of the present invention, in the current distribution monitoring component of the integrated gate-commutated thyristor proposed by the present invention, each coil group is composed of two coils wound in opposite directions and connected in series, which not only establish an electromagnetic coupling relationship with the measured current, but also have coupling magnetic flux directions opposite to those of the external electromagnetic interference, forming a mutual cancellation effect, thereby effectively shielding the interference of the external magnetic field.

[0059] In some embodiments of the present invention, see Figure 3 , a current distribution monitoring component for an integrated gate-commutated thyristor, further comprising:

[0060] The groove is provided in the bottom ferrite shielding layer 2 and is used for embedding the Hall effect sensor 4 .

[0061] It should be pointed out that the Hall effect sensor 4 and the double D Rogowski coil 1 are respectively located on both sides of the bottom ferrite shielding layer 2 and output signals respectively, and are not connected to each other.

[0062] It is understandable that the added ferrite shielding layer 2 can change the surrounding magnetic field distribution, so that the magnetic field is more concentrated on the ferrite surface, thereby reducing the interference of the external magnetic field on the Hall effect sensor 4.

[0063] Ferrite (usually refers to iron oxide such as Fe 3 O 4 or Fe 2 O 3 ) is a magnetic ceramic material with good magnetic permeability and high electrical resistance, which enables it to effectively suppress the propagation of electromagnetic waves.

[0064] When ferrite material is used as a shielding layer, its magnetic properties are mainly used to block and absorb electromagnetic waves. The specific principles are as follows:

[0065] Magnetic field absorption: Ferrite materials have high magnetic permeability and can effectively absorb and consume energy from electromagnetic waves. When electromagnetic waves pass through the ferrite shielding layer, the magnetic field components will be absorbed by the magnetic particles in the ferrite material, reducing the propagation of electromagnetic waves.

[0066] Dissipation factor: The dissipation factor (i.e. the material's ability to absorb electromagnetic waves) in ferrite materials is superior within a certain frequency range, which enables the ferrite shielding layer to effectively eliminate high-frequency noise.

[0067] Reflection and absorption: When electromagnetic waves come into contact with the ferrite shielding layer, part of the wave is reflected back and part of the wave is absorbed. The energy of the absorbed part is converted into heat energy, thereby reducing the penetration of the electromagnetic wave.

[0068] Features of ferrite shielding layer:

[0069] High magnetic permeability: Ferrite has high magnetic permeability, so it can effectively shield electromagnetic interference from the outside world or inside the device.

[0070] Low conductivity: Ferrite has low conductivity, which can effectively avoid the conductive effect of electric current and reduce the electromagnetic wave radiation caused by current conduction.

[0071] Wide frequency range: Ferrite materials are suitable for a variety of frequency ranges, especially for suppressing high-frequency noise.

[0072] High temperature stability: Ferrite materials generally have good high temperature stability and are suitable for working in high temperature environments.

[0073] Lightweight and compact: Ferrite materials are lightweight and can be easily made into small shielded components, making them suitable for compact electronic devices.

[0074] In some embodiments of the present invention, see Figure 1 , Figure 2 as well as Figure 3 , both coils in the double D Rogowski coil group are rectangular.

[0075] In some embodiments of the present invention, when the current in the integrated gate-commutated thyristor is a direct current or a low-frequency current, the Hall effect sensor is used to measure the current distribution in the integrated gate-commutated thyristor.

[0076] In some embodiments of the present invention, when the current in the integrated gate-commutated thyristor is a high-frequency current, the two double-D Rogowski coil groups are used to measure the current distribution in the integrated gate-commutated thyristor.

[0077] In the above two embodiments, when the current in the integrated gate-commutated thyristor is DC to low frequency, the current distribution is measured by a Hall effect sensor, and when the current in the integrated gate-commutated thyristor is high frequency, the current distribution is measured by two double D Rogowski coil groups. Therefore, the current distribution monitoring component of an integrated gate-commutated thyristor provided in the embodiment of the present application has a large measurement bandwidth and can measure the current distribution of the integrated gate-commutated thyristor from DC to high frequency current.

[0078] In some embodiments of the present invention, input terminals of the two coils are led out from the middle dividing line.

[0079] In some embodiments of the present invention, output terminals of the two coils are led out from the middle dividing line.

[0080] In some embodiments of the present invention, the relative directions of the two coils in the magnetic flux direction are opposite.

[0081] Magnetic flux direction refers to the direction of magnetic field lines, which describes the spatial distribution of the magnetic field and the direction of magnetic force. Magnetic flux is a physical quantity that describes the total magnetic flux of a magnetic field on a closed surface, while magnetic flux refers to the product of the magnetic field strength and surface area passing through a surface. Magnetic flux direction is a concept related to magnetic flux, which can be understood as the direction of magnetic flux. When magnetic flux passes through a surface, magnetic flux direction refers to the direction of the magnetic field lines when they pass through the surface.

[0082] In some embodiments of the present invention, the mutual inductance between the two double-D Rogowski coil groups is zero.

[0083] It can be understood that the mutual inductance mentioned above refers to the electromotive force induced by one of the two double-D Rogowski coil groups when the current flowing into the other double-D Rogowski coil group changes.

[0084] In some embodiments of the present invention, the coupling coefficient of the two coils in the direction of magnetic flux is a positive number.

[0085] The coupling coefficient (also called the magnetic coupling coefficient) is used to characterize the degree of magnetic coupling between two double-D Rogowski coil groups, that is, the interaction strength of the magnetic fields between them.

[0086] In some embodiments of the present invention, two double D Rogowski coil groups are arranged in a front-to-back overlapping manner to ensure that there is no magnetic field coupling or mutual inductance between them, but to achieve independent measurement in two orthogonal current directions through a cross-cross layout. Each double D Rogowski coil group includes two parallel, series-connected, and magnetically coupled reversely wound rectangular coils. The input and output terminals of the two reversely wound coils are both led out from the dividing line between them.

[0087] In some embodiments of the present invention, the middle dividing line of one of the two double-D Rogowski coil groups needs to be consistent with the current direction in the conductor being measured. It is possible to measure the current in two orthogonal directions separately, which is achieved by its two coil groups. Each counter-wound rectangular coil is composed of a multi-turn single coil, and the relative directions of the two such coils in the direction of the magnetic flux are opposite. The mutual inductance between the two decoupled coil groups is zero, and the coupling coefficient of the two counter-wound rectangular coils in the direction of the magnetic flux is positive.

[0088] From the above description, it can be seen that an embodiment of the present invention provides a current distribution monitoring component for an integrated gate-commutated thyristor, comprising: two double D Rogowski coil groups arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction of the middle dividing line between the two coils of one double D Rogowski coil group in the two double D Rogowski coil groups is consistent with the current direction of the integrated gate-commutated thyristor; two ferrite shielding layers are respectively attached to the bottom of each double D Rogowski coil group; and a Hall effect sensor is arranged on the bottom ferrite shielding layer.

[0089] The present invention can realize non-invasive measurement of the current distribution of the integrated gate-commutated thyristor. The entire sensor is small in size, compact, and easy to install in actual measurement. Secondly, the current sensor of the present invention has a large measurement bandwidth and can measure the current distribution from direct current to high-frequency current. Finally, the present invention uses a double D Rogowski coil group and a ferrite shield. The double D coil shields external magnetic field interference, which can make the coil output more accurate. In this structure, the double D Rogowski coil group generates a magnetic field perpendicular to the Hall effect sensor, and the Hall effect sensor is insensitive to the magnetic field in this direction, so it has little effect on the measurement of the Hall effect sensor. The ferrite shield added at last can change the surrounding magnetic field distribution, making the magnetic field more concentrated on the ferrite surface, thereby reducing the interference of the external magnetic field on the Hall effect sensor. In summary, the current distribution monitoring component of the integrated gate-commutated thyristor provided by the present invention has good anti-interference ability.

[0090] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0091] The descriptions with reference to the terms "one embodiment", "a specific embodiment", "some embodiments", "for example", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. The order of steps involved in each embodiment is used to schematically illustrate the implementation of the present invention, and the order of steps therein is not limited and may be appropriately adjusted as needed.

[0092] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0093] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of this specification. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0094] The above is only an example of the embodiment of the present specification and is not intended to limit the embodiment of the present specification. For those skilled in the art, the embodiment of the present specification may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the embodiment of the present specification shall be included in the scope of the claims of the embodiment of the present specification.

Claims

1. A current distribution monitoring component for an integrated gate-commutated thyristor, characterized in that: include: Two double D Rogowski coil groups are arranged in a cross shape; wherein each D Rogowski coil group is composed of two coils wound in opposite directions and connected in series, and the direction of the middle dividing line between the two coils of one of the two double D Rogowski coil groups is consistent with the current direction of the integrated gate commutated thyristor; Two ferrite shielding layers are respectively attached to the lower part of each double D Rogowski coil group; Hall effect sensor, placed on the bottom ferrite shield.

2. The current distribution monitoring assembly according to claim 1, characterized in that: Also includes: The groove is arranged in the bottom ferrite shielding layer and is used for embedding the Hall effect sensor.

3. The current distribution monitoring assembly according to claim 1, characterized in that: The two coils in the double D Rogowski coil group are both rectangular.

4. The current distribution monitoring assembly according to claim 1, characterized in that: When the current in the integrated gate-commutated thyristor is a direct current or a low-frequency current, the Hall effect sensor is used to measure the current distribution in the integrated gate-commutated thyristor.

5. The current distribution monitoring assembly according to claim 1, characterized in that: When the current in the integrated gate-commutated thyristor is a high-frequency current, the two double-D Rogowski coil groups are used to measure the current distribution in the integrated gate-commutated thyristor.

6. The current distribution monitoring assembly according to claim 1, characterized in that: Input terminals of the two coils are led out from the middle dividing line.

7. The current distribution monitoring assembly according to claim 1, characterized in that: The output terminals of the two coils are led out from the middle dividing line.

8. The current distribution monitoring assembly according to claim 1, characterized in that: The two coils are in opposite directions in terms of flux linkage.

9. The current distribution monitoring assembly according to claim 1, characterized in that: The mutual inductance between the two double-D Rogowski coil groups is zero.

10. The current distribution monitoring assembly according to any one of claims 1 to 9, characterized in that: The coupling coefficient of the two coils in the direction of magnetic flux is a positive number.

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