Method for quickly connecting three ends of MOS (Metal Oxide Semiconductor) tube

By extracting and classifying the MOS module, obtaining its three-end and boundary coordinate data, generating and positioning the punched metal layer, the problem of time-consuming and error-prone drawing of the MOS tube metal layer is solved, and the accuracy of the three-end connection of the MOS tube and the efficiency of layout design is improved.

CN119849430AInactive Publication Date: 2025-04-18博越微电子(江苏)有限公司
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Patent Information

Application Number
CN202510324548.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-19
Publication Date
2025-04-18
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

During the integrated circuit layout design process, manually drawing the metal level of MOS tube is a time-consuming and error-prone process, which affects the efficiency of layout design.

Method used

By extracting the selected MOS module, dividing it into inst type and mosaic type, obtaining the three-end coordinate data and boundary coordinate data of the MOS module according to the device type, generating metal levels and performing positioning and drilling.

Benefits of technology

It improves the accuracy of the three-end connection of MOS tube and the efficiency of layout design, and achieves fast and accurate three-end connection of MOS tube.

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Abstract

The invention discloses a method for quickly connecting three ends of a metal oxide semiconductor (MOS) tube, which relates to the technical field of data processing and comprises the following steps of: selecting an MOS module to be connected in a layout; obtaining three-terminal coordinate data of the MOS module and boundary coordinate data of the MOS module according to the device type of the MOS module; generating a metal level according to the three-end coordinate data of the MOS module and the boundary coordinate data of the MOS module; performing coordinate conversion on the three-end coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; and according to the actual coordinate data, positioning and punching are carried out on the metal layers. According to the method, the MOS module is extracted according to the unified standard, the three-end and boundary coordinate data of the MOS module are obtained according to the device type of the MOS module, the metal layer is generated according to the three-end and boundary coordinate data, positioning punching is carried out, the accuracy of connection of the three ends of the MOS tube is improved, and the efficiency of layout design is improved.
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Description

Technical Field

[0001] The invention relates to the technical field of data processing, and in particular to a method for quickly connecting three terminals of a MOS tube. Background Art

[0002] In the process of integrated circuit layout design, adding metal layers to MOS tubes is a common task. This process involves adding metal connections for the source, drain, and gate in the MOS tube structure, that is, making three-terminal connections for the MOS tube, which is done by drawing metal layers on the MOS tube, aligning the three terminals of the MOS tube, and then using tools to punch holes.

[0003] The common solution for connecting the three terminals of MOS tubes is to manually draw metal layers. Manually drawing metal layers is a time-consuming process. For complex layout designs, manually drawing metal layers may also lead to the possibility of errors, affecting the subsequent links and reducing the overall work efficiency of layout design. Therefore, a standardized and automated method for quickly connecting the three terminals of MOS tubes is needed. Summary of the invention

[0004] The purpose of the present invention is to provide a method for quickly connecting three terminals of a MOS tube. The present invention extracts selected MOS modules according to a unified standard, divides the MOS modules into inst type and mosaic type, obtains three-terminal coordinate data and boundary coordinate data of the MOS module according to the device type, generates a metal layer according to the three-terminal coordinate data and the boundary coordinate data, and positions and punches the metal layer, thereby improving the accuracy of the three-terminal connection of the MOS tube and improving the efficiency of layout design.

[0005] The purpose of the present invention is achieved by the following technical means: In a first aspect, the present invention provides a method for quickly connecting three terminals of a MOS tube, comprising the following steps: Select the MOS module to be connected in the layout; According to the device type of the MOS module, three-terminal coordinate data of the MOS module and boundary coordinate data of the MOS module are obtained; Generate a metal layer according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; Performing coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; The metal layer is positioned and punched according to the actual coordinate data.

[0006] Preferably, the device types of the MOS module include: inst type and mosaic type.

[0007] Preferably, the step of acquiring the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module according to the device type of the MOS module comprises the following steps: When the device type of the MOS module is an inst type, extracting diffusion layer data of the MOS unit, polysilicon layer data of the MOS unit, and boundary coordinate data of the MOS unit; The three-terminal coordinate data of the MOS unit are acquired according to the diffusion layer data of the MOS unit and the polysilicon layer data of the MOS unit.

[0008] Preferably, the step of acquiring the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module according to the device type of the MOS module comprises the following steps: When the device type of the MOS module is a mosaic type, extracting row and column distribution data of the MOS module; Extracting boundary coordinate data of the first MOS unit; Calculating the boundary coordinate data of each MOS unit according to the row and column distribution data of the MOS module and the boundary coordinate data of the first MOS unit; Traverse each MOS unit and extract the diffusion layer data of each MOS unit and the polysilicon layer data of each MOS unit; The three-terminal coordinate data of each MOS unit is acquired according to the diffusion layer data of each MOS unit and the polysilicon layer data of each MOS unit.

[0009] Preferably, the row and column distribution data of the MOS module includes: the number of rows, the number of columns, the row interval and the column interval.

[0010] Preferably, the coordinate conversion of the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain the actual coordinate data comprises the following steps: Obtain the origin coordinate data, rotation state data and scaling data of the MOS module; Calculating the coordinate translation amount according to the origin coordinate data; Calculating the coordinate rotation amount according to the rotation state data; Calculating a coordinate scaling amount according to the scaling data; According to the coordinate translation amount, the coordinate rotation amount and the coordinate scaling amount, coordinate transformation is performed on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain the actual coordinate data.

[0011] Preferably, the rotation state data of the MOS module includes: R0, MX, MY and R180.

[0012] In a second aspect, the present invention provides a system for quickly connecting three terminals of a MOS tube, applying the above-mentioned method for quickly connecting three terminals of a MOS tube, comprising: a MOS module selection unit, a coordinate data acquisition unit, a metal layer generation unit, a coordinate data conversion unit and a MOS three-terminal connection unit; The MOS module selection unit is used to select a MOS module to be connected in the layout; The coordinate data acquisition unit is used to acquire the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module according to the device type of the MOS module; The metal level generation unit is used to generate a metal level according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; The coordinate data conversion unit is used to perform coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; The MOS three-terminal connection unit is used to locate and punch holes in the metal layer according to the actual coordinate data.

[0013] In a third aspect, the present invention provides an electronic device, including a processor and a memory, wherein the memory is used to store computer program code, and the computer program code includes computer instructions. When the processor executes the computer instructions, the electronic device executes the above-mentioned method for quickly connecting the three terminals of a MOS tube.

[0014] In a fourth aspect, the present invention provides a computer-readable storage medium, in which a computer program is stored. The computer program includes program instructions. When the program instructions are executed by a processor of an electronic device, the processor executes the above-mentioned method of quickly connecting the three terminals of a MOS tube.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The present invention extracts and selects MOS modules according to a unified standard, divides the MOS modules into inst type and mosaic type, obtains three-terminal coordinate data and boundary coordinate data of the MOS modules according to the device type, generates a metal layer according to the three-terminal coordinate data and the boundary coordinate data, and performs positioning and punching on the metal layer, thereby improving the accuracy of the three-terminal connection of the MOS tube and improving the efficiency of the layout design; The present invention sets two device types, the inst type and the mosaic type, and unifies the process of obtaining the coordinate data of the MOS module according to the device type, so that multiple MOS modules can be processed quickly and accurately at the same time, thereby improving the accuracy and efficiency of the three-terminal connection of the MOS tube; The present invention transforms the coordinate data, and on the basis of quickly acquiring the hierarchical coordinate data, converts the hierarchical coordinate data into a layout coordinate system by calculating the translation, rotation and scaling of the coordinates, thereby realizing the positioning of the metal layer and the MOS tube and improving the accuracy of the three-terminal connection of the MOS tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0018] Figure 1 A schematic diagram of a flow chart of a method for quickly connecting three terminals of a MOS tube provided in this embodiment; Figure 2 A schematic diagram of a flow chart of step S2 provided in this embodiment, which is to obtain three-terminal coordinate data of the MOS module and boundary coordinate data of the MOS module according to the device type of the MOS module; Figure 3 Step S4 provided in this embodiment is a flow chart of performing coordinate exchange on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain the actual coordinate data; Figure 4 A schematic diagram of the structure of a system for quickly connecting three terminals of a MOS tube provided in this embodiment; Figure 5 A schematic diagram of the structure of an electronic device provided in this embodiment. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0021] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0022] Embodiment 1 This embodiment provides a method for quickly connecting the three terminals of a MOS tube. Figure 1 As shown, the following steps are included: S1, select the MOS module to be connected in the layout; S2, according to the device type of the MOS module, obtaining the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; S3, generating a metal layer according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; S4, performing coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; S5, positioning and punching the metal layer according to the actual coordinate data.

[0023] It should be noted that the three terminals of the MOS tube are the source, drain and gate of the MOS tube. To realize the connection of the three terminals of the MOS tube, it is necessary to cover the MOS tube with metal and punch holes in the metal layer according to the positions of the three terminals. In this embodiment, by selecting a MOS module to be connected in the layout, obtaining and analyzing the parameters of the MOS module to obtain the boundary coordinates and three-terminal coordinates of the MOS module, a metal layer of corresponding size is generated and holes are punched at the three-terminal positions to realize the three-terminal connection of the MOS tube.

[0024] Specifically, according to the device type of the selected MOS module, the three-terminal coordinate data and boundary coordinate data of the MOS module are obtained. The device types of the MOS module include inst type and mosaic type, wherein the inst type refers to a MOS unit constituting a MOS module instance, and the mosaic type refers to a plurality of identical MOS units combined into a MOS module instance according to design parameters. When multiple MOS modules are selected for three-terminal connection, it is necessary to traverse each MOS module, determine the device type of each MOS module respectively, and generate a metal layer for each MOS module.

[0025] After obtaining the three-terminal coordinate data and boundary coordinate data of the MOS module, a metal layer is generated according to the coordinate data, and the metal layer is positioned and punched. In this process, there is a problem that the acquired three-terminal coordinate data and boundary coordinate data are different from the actual coordinate data of the layout. This is because when obtaining the three-terminal coordinate data and boundary coordinate data of the MOS module, the coordinate system of each layer in the MOS module is used. This coordinate system is different from the coordinate system used in the layout. In order to locate the metal layer and the three-terminal position to the layout for punching, it is necessary to convert the coordinate system used by the acquired coordinate data to the coordinate system of the layout, and perform coordinate conversion on the coordinate data.

[0026] In this embodiment, the MOS modules are selected by extracting them according to a unified standard, the MOS modules are divided into inst type and mosaic type, the three-terminal coordinate data and boundary coordinate data of the MOS modules are obtained according to the device type, and the metal layer is generated according to the three-terminal coordinate data and the boundary coordinate data, and the metal layer is positioned and punched, thereby improving the accuracy of the three-terminal connection of the MOS tube and improving the efficiency of the layout design.

[0027] In some embodiments, step S2, according to the device type of the MOS module, obtain the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module, such as Figure 2 As shown, the following steps are included: S21, when the device type of the MOS module is inst type, extracting diffusion layer data of the MOS unit, polysilicon layer data of the MOS unit, and boundary coordinate data of the MOS unit; S22, acquiring three-terminal coordinate data of the MOS unit according to the diffusion layer data of the MOS unit and the polysilicon layer data of the MOS unit.

[0028] It should be noted that the inst type means that a MOS unit constitutes a MOS module instance. Therefore, when the device type of the MOS module is the inst type, only the parameters of a single MOS unit need to be extracted. When the device type of the MOS module is the inst type, the data of each level and the bounding box data of the MOS unit are extracted, where each level of data includes the diffusion layer data and the polysilicon layer data. Note that the coordinate data in each level of data and the bounding box data obtains the three-terminal coordinate data and boundary coordinate data of the MOS unit.

[0029] In some embodiments, step S2, according to the device type of the MOS module, obtain the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module, such as Figure 2 As shown, the following steps are included: S23, when the device type of the MOS module is a mosaic type, extracting row and column distribution data of the MOS module; S24, extracting the boundary coordinate data of the first MOS unit; S25, calculating the boundary coordinate data of each MOS unit according to the row and column distribution data of the MOS module and the boundary coordinate data of the first MOS unit; S26, traversing each MOS unit, extracting diffusion layer data of each MOS unit and polysilicon layer data of each MOS unit; S27, acquiring three-terminal coordinate data of each MOS unit according to the diffusion layer data of each MOS unit and the polysilicon layer data of each MOS unit.

[0030] It should be noted that the mosaic type refers to a combination of multiple identical MOS units into a MOS module instance. Therefore, when the device type of the MOS module is a mosaic type, it is necessary to extract parameters for each MOS unit in the MOS module. When the device type of the MOS module is a mosaic, parameter extraction for the MOS module can only extract the various levels of data and boundary box data of a MOS unit, where the various levels of data include diffusion layer data and polysilicon layer data. Therefore, it is necessary to extract the row and column distribution data of the MOS module, and calculate the boundary coordinate data of each MOS unit based on the row and column distribution data of the MOS module and the boundary coordinate data of the first MOS unit.

[0031] The row and column distribution data of the MOS module is used to describe the spatial distribution of each MOS unit in the MOS module. The row and column distribution data of the MOS module includes the number of rows, the number of columns, the row spacing and the column spacing; the first MOS unit is the MOS unit to which data is extracted, generally the MOS unit located at the lower left corner of the MOS module, and the boundary coordinate data of the first MOS unit can determine the position and size of the first MOS unit. Combined with the row and column distribution data of the MOS module, the boundary coordinate data of each MOS unit can be calculated, thereby obtaining the three-terminal coordinate data of each MOS unit. Specifically, when the number of rows, the number of columns, the row spacing and the column spacing of the obtained MOS module are [2, 3, 1, 1], that is, the MOS module is composed of two rows and three columns of MOS units, the row spacing and column spacing of the MOS unit are both 1. The boundary coordinate data of the first MOS unit is the coordinate data of the diagonal points of the boundary box of the first MOS unit, generally the coordinate data of the lower left corner and the upper right corner of the boundary box of the MOS unit. The size of the MOS unit is calculated by obtaining the boundary coordinate data of the first MOS unit. The boundary coordinate data of each MOS unit can be calculated in combination with the row spacing and the column spacing, and then the data of each level of each MOS unit is extracted to obtain the three-terminal coordinate data of each MOS unit.

[0032] In this embodiment, by setting two device types, inst type and mosaic type, the process of obtaining the coordinate data of the MOS module is unified according to the device type, so that multiple MOS modules can be processed quickly and accurately at the same time, thereby improving the accuracy and efficiency of the three-terminal connection of the MOS tube.

[0033] In some embodiments, step S4 is to perform coordinate transformation on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data, such as Figure 3 As shown, the following steps are included: S41, obtaining origin coordinate data, rotation state data and scaling data of the MOS module; S42, calculating the coordinate translation amount according to the origin coordinate data; S43, calculating the coordinate rotation amount according to the rotation state data; S44, calculating the coordinate scaling amount according to the scaling data; S45, performing coordinate transformation on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module according to the coordinate translation amount, the coordinate rotation amount and the coordinate scaling amount to obtain actual coordinate data.

[0034] It should be noted that the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module are located in different levels. In the hierarchical view, the coordinate system used is different from the coordinate system used by the layout. As a result, no matter how the position of the MOS module in the layout changes, the extracted three-terminal coordinate data and boundary coordinate data will not change. In addition, the MOS module will also be rotated and scaled in the hierarchical view. Therefore, it is necessary to obtain the origin coordinate data of the corresponding level, and also obtain the rotation state data and scaling data of the MOS module to determine the direction and layout of the MOS module in the layout.

[0035] The origin coordinate data is the coordinate data of the origin of the coordinate system used by the MOS module hierarchy in the coordinate system used by the layout. By obtaining the origin coordinate data, the coordinate translation is calculated. Specifically, by extracting the origin coordinate data, xy (-8, 2) is obtained, that is, the coordinates of the origin of the hierarchical coordinate system of the MOS module in the layout coordinate system are (-8, 2), and the translation of the X axis is -8, and the translation of the Y axis is 2. The rotation state data is the orientation mode of the MOS module, which describes whether the MOS module is placed by rotating or mirroring the MOS unit relative to the original placement state of the layout. The original placement state of the layout is a certain rotation or mirroring of the default placement state, and the extracted MOS module is displayed in the view of the default placement state, which ensures that the three-terminal positions of the MOS module can be obtained according to a unified standard, so as to quickly obtain the three-terminal coordinate data of the MOS module. The rotation state data includes: R0, MX, MY and R180. R0 means that the MOS module is not rotated, MX means that the MOS module is mirrored about the X axis, MY means that the MOS module is mirrored about the Y axis, and R180 means that the MOS module is rotated 180 degrees. The scaling data is the ratio of the MOS module to the layout. By obtaining the scaling data, the coordinate scaling amount is calculated.

[0036] In this embodiment, by performing coordinate transformation on the coordinate data, on the basis of quickly acquiring the hierarchical coordinate data, the hierarchical coordinate data is converted into the layout coordinate system by calculating the translation, rotation and scaling of the coordinates, thereby realizing the positioning of the metal layer and the MOS tube and improving the accuracy of the three-terminal connection of the MOS tube.

[0037] Embodiment 2 This embodiment provides a system for quickly connecting three terminals of a MOS tube, and applies the above-mentioned method for quickly connecting three terminals of a MOS tube, such as Figure 4 As shown, it includes: a MOS module selection unit, a coordinate data acquisition unit, a metal layer generation unit, a coordinate data conversion unit and a MOS three-terminal connection unit; A MOS module selection unit is used to select a MOS module to be connected in the layout; A coordinate data acquisition unit, used to acquire three-terminal coordinate data of the MOS module and boundary coordinate data of the MOS module according to the device type of the MOS module; A metal layer generation unit, used for generating a metal layer according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; A coordinate data conversion unit, used for performing coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; The MOS three-terminal connection unit is used to locate and punch holes in the metal layer according to the actual coordinate data.

[0038] In this embodiment, the MOS modules are selected by extracting them according to a unified standard, the MOS modules are divided into inst type and mosaic type, the three-terminal coordinate data and boundary coordinate data of the MOS modules are obtained according to the device type, and the metal layer is generated according to the three-terminal coordinate data and the boundary coordinate data, and the metal layer is positioned and punched, thereby improving the accuracy of the three-terminal connection of the MOS tube and improving the efficiency of the layout design.

[0039] It should be understood that the disclosed system can be implemented in other ways. For example, the system embodiments described above are merely schematic. For example, the division of the above modules is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, each functional module can be integrated into a processing module, or each module can exist physically separately, or two or more modules can be integrated into one module. The above integrated modules can be implemented in the form of hardware or in the form of software functional modules.

[0040] Embodiment 3 This embodiment provides an electronic device 2, such as Figure 5 As shown, a processor 21 and a memory 22, the memory 22 is used to store computer program codes, the computer program codes include computer instructions, when the processor 21 executes the computer instructions, the electronic device executes the above-mentioned method of quickly connecting the three terminals of the MOS tube.

[0041] The electronic device 2 includes a processor 21, a memory 22, an output device 23, and an input device 24. The processor 21, the memory 22, the output device 23, and the input device 24 are coupled via a connector, and the connector includes various interfaces, transmission lines, or buses, etc., which are not limited in the embodiments of the present invention. It should be understood that in various embodiments of the present invention, coupling refers to mutual connection in a specific manner, including direct connection or indirect connection through other devices, for example, through various interfaces, transmission lines, buses, etc.

[0042] The processor 21 may be one or more graphics processing units (GPUs). When the processor 21 is a GPU, the GPU may be a single-core GPU or a multi-core GPU. Optionally, the processor 21 may be a processor group consisting of multiple GPUs, and the multiple processors are coupled to each other via one or more buses. Optionally, the processor 21 may also be other types of processors, etc., which are not limited in the embodiments of the present invention.

[0043] The memory 22 can be used to store computer program instructions and various computer program codes including program codes for executing the scheme of the present invention. Optionally, the memory 22 includes but is not limited to random access memory (RAM), read-only memory (ROM), erasable programmable read only memory (EPROM), or portable read only memory (CD-ROM), and the memory 22 is used for related instructions and data.

[0044] The input device 24 is used to input data and / or signals, and the output device 23 is used to output data and / or signals. The output device 23 and the input device 24 can be independent devices or an integrated device.

[0045] This embodiment provides a computer-readable storage medium, in which a computer program is stored. The computer program includes program instructions. When the program instructions are executed by a processor of an electronic device, the processor executes the above-mentioned method for quickly connecting three terminals of a MOS tube.

[0046] The above are only specific embodiments of the present invention, which enable those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A method for quickly connecting three terminals of a MOS tube, characterized in that: The following steps are involved: Select the MOS module to be connected in the layout; According to the device type of the MOS module, three-terminal coordinate data of the MOS module and boundary coordinate data of the MOS module are obtained; Generate a metal layer according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; Performing coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; Positioning and punching holes in the metal layer according to the actual coordinate data; The coordinate conversion of the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data includes the following steps: Obtain the origin coordinate data, rotation state data and scaling data of the MOS module; Calculating the coordinate translation amount according to the origin coordinate data; Calculating the coordinate rotation amount according to the rotation state data; Calculating a coordinate scaling amount according to the scaling data; According to the coordinate translation amount, the coordinate rotation amount and the coordinate scaling amount, coordinate transformation is performed on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain the actual coordinate data.

2. A method for quickly connecting three terminals of a MOS tube according to claim 1, characterized in that: The device types of the MOS module include: inst type and mosaic type.

3. A method for quickly connecting three terminals of a MOS tube according to claim 2, characterized in that: The method of obtaining the three-terminal coordinate data and the boundary coordinate data of the MOS module according to the device type of the MOS module comprises the following steps: When the device type of the MOS module is an inst type, extracting diffusion layer data of the MOS unit, polysilicon layer data of the MOS unit, and boundary coordinate data of the MOS unit; The three-terminal coordinate data of the MOS unit are acquired according to the diffusion layer data of the MOS unit and the polysilicon layer data of the MOS unit.

4. A method for quickly connecting three terminals of a MOS tube according to claim 2, characterized in that: The method of obtaining the three-terminal coordinate data and the boundary coordinate data of the MOS module according to the device type of the MOS module comprises the following steps: When the device type of the MOS module is a mosaic type, extracting row and column distribution data of the MOS module; Extracting boundary coordinate data of the first MOS unit; Calculating the boundary coordinate data of each MOS unit according to the row and column distribution data of the MOS module and the boundary coordinate data of the first MOS unit; Traverse each MOS unit and extract the diffusion layer data of each MOS unit and the polysilicon layer data of each MOS unit; The three-terminal coordinate data of each MOS unit is acquired according to the diffusion layer data of each MOS unit and the polysilicon layer data of each MOS unit.

5. A method for quickly connecting three terminals of a MOS tube according to claim 4, characterized in that: The row and column distribution data of the MOS module includes: the number of rows, the number of columns, the row interval and the column interval.

6. A method for quickly connecting three terminals of a MOS tube according to claim 1, characterized in that: The rotation state data of the MOS module includes: R0, MX, MY and R180.

7. A system for quickly connecting three terminals of a MOS tube, using a method for quickly connecting three terminals of a MOS tube as claimed in any one of claims 1 to 6, characterized in that: include: MOS module selection unit, coordinate data acquisition unit, metal layer generation unit, coordinate data conversion unit and MOS three-terminal connection unit; The MOS module selection unit is used to select a MOS module to be connected in the layout; The coordinate data acquisition unit is used to acquire the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module according to the device type of the MOS module; The metal level generation unit is used to generate a metal level according to the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module; The coordinate data conversion unit is used to perform coordinate conversion on the three-terminal coordinate data of the MOS module and the boundary coordinate data of the MOS module to obtain actual coordinate data; The MOS three-terminal connection unit is used to locate and punch holes in the metal layer according to the actual coordinate data.

8. An electronic device, characterized in that: The electronic device comprises a processor and a memory, wherein the memory is used to store computer program codes, and the computer program codes include computer instructions. When the processor executes the computer instructions, the electronic device executes a method for quickly connecting three terminals of a MOS tube as described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, which includes program instructions. When the program instructions are executed by a processor of an electronic device, the processor executes a method for quickly connecting three terminals of a MOS tube as described in any one of claims 1 to 6.

Citation Information

Patent Citations

  • An interactive drilling method for a gate electrode of a MOS transistor

    CN109145511A

  • Data set construction method and layout generation method for simulating IC layout and wiring collaboration

    CN116933721A

  • Wiring method for quickly connecting MOS (Metal Oxide Semiconductor) pin and input / output pin

    CN117151025A