Graphene supercapacitor and manufacturing method thereof

Abstract

The invention discloses a graphene supercapacitor and a manufacturing method thereof, and belongs to the technical field of supercapacitors. According to the invention, an electrolyte in a traditional supercapacitor is canceled, and ceramic with a high dielectric constant is used as a dielectric medium, so that the voltage resistance of a single body is improved; graphene is used as the electrode to increase the specific surface area of the electrode material, thereby increasing the capacity of the supercapacitor. In order to enable the distance between the two electrodes to be smaller so as to obtain large capacity and increase energy density, a photoetching technology or a chemical vapor deposition technology is adopted, the thickness of the dielectric layer is 5-100 nm, meanwhile, the thickness of the electrodes is reduced, and the energy density can be further improved. In addition, due to the fact that no electrolyte is used, the risk of electrolyte leakage does not exist, performance instability at high temperature or low temperature is avoided, leakage current is greatly reduced, use safety is improved, due to the design of no electrolyte, the capacitor is more compact and light, and the energy density and the charging speed are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of supercapacitors, and more particularly to a graphene supercapacitor and a method for manufacturing the same. Background Art

[0002] The development of mobile phones, electric cars, robots, and especially electric cars has led to an increasing demand for mobile power sources. The mainstream mobile power sources currently used are still chemical power sources such as various lithium batteries and lead-acid batteries. However, these power sources have long charging times, short service lives, and potential safety hazards. Some chemical power sources may cause safety accidents such as explosions and fires under extreme conditions such as overcharging, overdischarging, and high temperatures.

[0003] Another commonly used physical energy storage device is the supercapacitor, but the energy density of supercapacitors varies due to factors such as materials and processes, and is generally in the range of 5-10Wh / kg. The energy density of some advanced supercapacitors can reach 30-50Wh / kg, and the energy density of some experimental supercapacitors in the development of new materials can theoretically exceed 100Wh / kg. Compared with traditional lead-acid batteries (30-50Wh / kg) and lithium-ion batteries (100-260Wh / kg), the energy density of supercapacitors is generally low. Moreover, the current single cell voltage of supercapacitors is low, only 2.5V-3.5V, and multiple capacitors need to be connected in series to increase the overall voltage. It also has the problem of high self-discharge, and the self-discharge rate of supercapacitors is higher than that of pure chemical power sources.

[0004] Therefore, how to provide a graphene supercapacitor and a method for manufacturing the same to improve its single cell voltage, energy density, charging speed and safety of use is a problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] In view of this, the present invention provides a graphene supercapacitor and a method for manufacturing the same, which avoids the risk of electrolyte leakage through an electrolyte-free design, improves safety, increases single-cell voltage, and increases energy density and charging speed.

[0006] In order to achieve the above object, the present invention adopts the following technical solution:

[0007] In one aspect, the present invention provides a graphene supercapacitor, comprising:

[0008] Using ceramic as a dielectric matrix, graphene structures are staggered in the dielectric matrix, and the ceramic layers between adjacent graphene structures constitute ceramic dielectric layers;

[0009] The left and right sides of the dielectric substrate are coated with metal to serve as two current collecting electrodes of the graphene supercapacitor.

[0010] Preferably, the dielectric substrate is a rectangular parallelepiped ceramic body, and the left and right sides of the dielectric substrate are two side surfaces of the rectangular parallelepiped ceramic body along the width direction; the graphene structure is a channel, and the channel is filled with graphene to form a graphene film;

[0011] A plurality of channels are arranged at intervals on the rectangular ceramic body, wherein the channels open on the left and right sides of the rectangular ceramic body, the thickness of the channels is along the thickness direction of the rectangular ceramic body and the width of the channels is equal to the thickness of the rectangular ceramic body; the width of the channels is along the length direction of the rectangular ceramic body; the length of the channels is along the width direction of the rectangular ceramic body and the length of the channels is less than the width of the rectangular ceramic body, and the channels are parallel to each other; wherein the odd-numbered channels open on the right side of the rectangular ceramic body, and the even-numbered channels open on the left side of the rectangular ceramic body.

[0012] Preferably, the dielectric substrate is a ceramic film, and the graphene structure is a graphene film;

[0013] The graphene film is deposited on the ceramic film, wherein the left side of the graphene film deposited an odd number of times is left blank, so that the left side of the graphene film is narrower than the ceramic film; the right side of the graphene film deposited an even number of times is left blank, so that the right side of the graphene film is narrower than the ceramic film.

[0014] Preferably, the ceramic dielectric layer has a thickness of 5 nm to 100 nm.

[0015] Preferably, the graphene structure has a thickness of 5nm-200nm.

[0016] On the other hand, the present invention also provides a method for manufacturing a graphene supercapacitor, which is used to prepare the above-mentioned graphene supercapacitor, comprising the following steps:

[0017] Obtaining a ceramic dielectric substrate, wherein the ceramic dielectric substrate comprises a ceramic film or a rectangular parallelepiped ceramic body;

[0018] Graphene structures are arranged in an alternating manner in the ceramic dielectric matrix, wherein the graphene structures include graphene films or channels; wherein the ceramic films correspond to the graphene films, and the rectangular parallelepiped ceramic bodies correspond to the channels;

[0019] Metal is coated on the left and right sides of the ceramic dielectric substrate to serve as two current collecting electrodes of the graphene supercapacitor.

[0020] Preferably, when the ceramic dielectric matrix is ​​a rectangular parallelepiped ceramic body, the left and right sides of the dielectric matrix are two side surfaces of the rectangular parallelepiped ceramic body along the width direction, and the graphene structure is a channel, it includes:

[0021] Take a rectangular ceramic body, and cut a plurality of channels on the left and right sides by laser, wherein the channels are opened on the left and right sides of the rectangular ceramic body, the thickness of the channels is along the thickness direction of the rectangular ceramic body and the width of the channels is equal to the thickness of the rectangular ceramic body; the width of the channels is along the length direction of the rectangular ceramic body; the length of the channels is along the width direction of the rectangular ceramic body and the length of the channels is less than the width of the rectangular ceramic body, and the channels are parallel to each other; wherein the odd-numbered channels are opened on the right side of the rectangular ceramic body, and the even-numbered channels are opened on the left side of the rectangular ceramic body;

[0022] Using airflow to blow out the debris from cutting in the rectangular ceramic body, and then using a vacuum cleaner to remove dust again;

[0023] The cut rectangular ceramic body is washed again with deionized water and then heated to remove moisture;

[0024] Seal one side of the rectangular ceramic body along the length direction with an insulating film, inject graphene into each channel from another side along the length direction to make a channel, and after the injection is completed, seal the other side along the length direction with an insulating film;

[0025] The left side and the right side of the rectangular ceramic body are respectively coated with metal to manufacture current collecting electrodes.

[0026] Preferably, when the ceramic dielectric matrix is ​​a ceramic film and the graphene structure is a graphene film, it includes:

[0027] Fabrication of ceramic membranes using chemical vapor deposition;

[0028] Generating a graphene film on the ceramic film by chemical vapor deposition;

[0029] The ceramic film and the graphene film are repeatedly stacked to form the above-mentioned film. When the graphene film is formed, the left mask is left blank for odd-numbered times and the right mask is left blank for even-numbered times;

[0030] When the stacking thickness reaches a preset range, removing the composite film layer composed of the ceramic film and the graphene film, and cutting the composite film layer to a required length;

[0031] Coating metal on the left and right sides of the cut composite film layer as two current collecting electrodes of the capacitor; the two adjacent graphene film layers in the cut composite film layer serve as two electrodes of the capacitor;

[0032] The front and rear sides of the cut composite film layer are encapsulated with an insulating film.

[0033] Preferably, the graphene film is generated by chemical vapor deposition.

[0034] Preferably, the preset range is 1 mm to 2 mm.

[0035] It can be known from the above technical scheme that compared with the prior art, the present invention discloses a graphene supercapacitor and a method for manufacturing the same, eliminating the electrolyte in the supercapacitor and using ceramics with a high dielectric constant as the dielectric, so as to improve the withstand voltage of the monomer; using graphene as an electrode to increase the specific surface area of ​​the electrode material, thereby increasing the capacity of the supercapacitor. In order to make the distance between the two electrodes smaller to obtain a large capacity and increase the energy density, the present invention adopts photolithography technology or chemical vapor deposition technology to make the thickness of the dielectric layer 5nm-100nm, while reducing the distance between the electrodes, which is conducive to further improving the energy density and increasing the capacitance. In addition, since no electrolyte is used, the present invention does not have the risk of electrolyte leakage, and the performance will not be unstable at high or low temperatures, which greatly reduces the leakage current and improves the safety of use. The design without electrolyte makes the capacitor more compact and lightweight, and improves the energy density and charging speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0037] Figure 1 is a schematic diagram of a rectangular ceramic body;

[0038] Figure 2 It is a side view of an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0040] On the one hand, an embodiment of the present invention provides a graphene supercapacitor, comprising:

[0041] Ceramic is used as a dielectric matrix, graphene structures are arranged in an alternating manner in the dielectric matrix, and the ceramic layers between adjacent graphene structures constitute a ceramic dielectric layer 3; the thickness of the ceramic dielectric layer 3 is 5nm to 100nm; the thickness of the graphene structure is 5nm-200nm.

[0042] The left and right sides of the dielectric substrate are coated with metal to serve as two current collecting electrodes 4 of the graphene supercapacitor.

[0043] On the other hand, an embodiment of the present invention further provides a method for manufacturing a graphene supercapacitor, which is used to prepare the above-mentioned graphene supercapacitor, comprising the following steps:

[0044] Obtain a ceramic dielectric substrate, the ceramic dielectric substrate comprising a ceramic film or a rectangular parallelepiped ceramic body 1;

[0045] according to Figure 1 The distance between the left and right sides of the rectangular ceramic body 1 is the width, the distance between the upper and lower sides is the length, and the distance between the front and rear sides is the thickness.

[0046] A graphene structure is staggeredly arranged in a ceramic dielectric matrix, wherein the graphene structure includes a graphene film or a channel 2; the ceramic film corresponds to the graphene film, and the rectangular ceramic body 1 corresponds to the channel 2;

[0047] Metal is coated on the left and right sides of the ceramic dielectric substrate to serve as two current collecting electrodes 4 of the graphene supercapacitor.

[0048] Embodiment 1: Take the dielectric substrate as a rectangular ceramic body 1 and the graphene structure as a channel 2 as an example.

[0049] In this embodiment, the left and right sides of the dielectric matrix are two side surfaces of the rectangular ceramic body 1 along the width direction (ie, two side surfaces whose size is length×thickness); the channel 2 is filled with graphene to form a graphene film.

[0050] The structure of the graphene supercapacitor obtained in this embodiment is as follows:

[0051] A plurality of channels 2 are arranged at intervals on the rectangular ceramic body 1, and the channels 2 open on the left and right sides of the rectangular ceramic body 1. The thickness of the channels 2 is along the thickness direction of the rectangular ceramic body 1 and the width of the channels 2 is equal to the thickness of the rectangular ceramic body 1; the width of the channels 2 is along the length direction of the rectangular ceramic body 1; the length of the channels 2 is along the width direction of the rectangular ceramic body 1 and the length of the channels 2 is less than the width of the rectangular ceramic body 1, and the channels 2 are parallel to each other; wherein the odd-numbered channels open on the right side of the rectangular ceramic body 1, and the even-numbered channels open on the left side of the rectangular ceramic body 1, and the side view thereof is as shown in FIG. Figure 1 shown.

[0052] The manufacturing method is as follows:

[0053] S11. Cutting the ceramic body: take a rectangular ceramic body 1 with a length of 10 mm, a width of 5 mm and a thickness of 2 mm, and use a laser to cut a number of grooves 2 on the left and right sides (10 mm×2 mm). The width of the groove 2 is along the length direction of the rectangular ceramic body 1; the thickness of the groove 2 is along the thickness direction of the rectangular ceramic body 1 and the thickness of the groove 2 is equal to the thickness of the rectangular ceramic body 1 (2 mm); the length of the groove 2 is along the width direction of the rectangular ceramic body 1 and the length of the groove 2 is less than the width of the rectangular ceramic body 1 (5 mm), and the grooves 2 are parallel to each other; wherein, the odd-numbered grooves open on the right side of the rectangular ceramic body 1, and the even-numbered grooves open on the left side of the rectangular ceramic body 1.

[0054] Specifically, in this embodiment, the width of the channel 2 (ie, the thickness of the graphene structure) is 5 nm to 100 nm, the length is 4.9 mm, and the distance between adjacent channels 2 (ie, the thickness of the ceramic dielectric layer 3) is 5 nm to 200 nm.

[0055] S12. Remove cutting dust: Use airflow to blow out the debris from the cutting of the rectangular ceramic body 1, and then use a vacuum cleaner to remove dust again;

[0056] S13 washing and drying: washing the cut rectangular ceramic body 1 again with deionized water, and then heating to remove moisture;

[0057] S14. Edge sealing and graphene filling: seal one side surface (10mm×5mm) along the length direction of the rectangular ceramic body 1 with an insulating film, and fill graphene into each channel 2 from the other side surface (10mm×5mm) along the length direction to make the channel 2. After the filling is completed, seal the other side surface along the length direction with an insulating film.

[0058] S15. Making the current collecting electrode 4: Use metal to coat the left side and the right side of the rectangular parallelepiped ceramic body 1 respectively to make the current collecting electrode 4.

[0059] Example 2: Take the dielectric substrate as a ceramic film and the graphene structure as a graphene film as an example.

[0060] The structure of the graphene supercapacitor obtained in this embodiment is as follows:

[0061] The graphene film is deposited on the ceramic film, wherein the left side of the graphene film deposited an odd number of times is left blank, so that the left side of the graphene film is narrower than the ceramic film; the right side of the graphene film deposited an even number of times is left blank, so that the right side of the graphene film is narrower than the ceramic film.

[0062] The manufacturing method is as follows:

[0063] S21. Using chemical vapor deposition to prepare a barium titanate ceramic film, comprising the following steps:

[0064] S211. Preparation

[0065] Material preparation: Use titanium source such as butyl titanate [Ti(OC 4 H 9 ) 4 ], barium sources such as diisopropoxybarium [Ba(OC 3 H 7 ) 2 ] and other metal organic compounds, and oxygen (O 2 ), argon (Ar), etc.

[0066] Equipment preparation: Use chemical vapor deposition equipment, including reaction chamber, gas delivery system, heating system, vacuum system, etc., to ensure that the equipment operates normally and is clean. At the same time, prepare substrates, such as silicon (Si) wafers, sapphire (Al 2 O 3 ) sheets, etc., clean and dry them to ensure the surface is clean and smooth.

[0067] S212.Deposition process

[0068] Gas delivery: The precisely measured titanium source and barium source vapors are mixed with a carrier gas (such as Ar) through a gas delivery system and introduced into the reaction chamber, while an appropriate amount of O 2 as a reaction gas.

[0069] Reactive deposition: The substrate in the chamber is heated to a suitable temperature, generally 600-900°C. Under this condition, the titanium source, barium source and O 2 Chemical reactions occur, such as butyl titanate decomposing titanium oxide and barium diisopropoxide decomposing barium oxide, which further react to form BaTiO 3 :

[0070]

[0071] The reaction products are deposited on the substrate surface to form BaTiO 3 Ceramic membrane.

[0072] Film thickness control: By controlling the reaction time, gas flow, deposition temperature and other parameters, the BaTiO 3 The thickness of the ceramic membrane. Generally, the longer the reaction time and the greater the gas flow rate, the thicker the membrane. The membrane thickness is controlled at 5nm-100nm.

[0073] S213. Post-processing

[0074] Annealing treatment: The deposited sample is annealed at a high temperature (such as 800-1000°C), generally in an oxygen atmosphere, to eliminate stress within the film, improve the crystal structure, and enhance the performance of the ceramic film.

[0075] S22. Depositing a graphene film on the ceramic film.

[0076] This embodiment uses chemical vapor deposition (CVD) to produce graphene film, using gaseous carbon sources (such as methane, ethylene, gaseous carbon sources generated by high-temperature cracking of lignin, etc.) to decompose under high temperature or catalyst, and carbon atoms are deposited on the surface of the substrate and chemically react to form graphene. Carbon atoms will be arranged on the substrate according to a certain lattice structure, and the number and quality of graphene growth layers can be controlled by controlling the reaction conditions. The relevant introduction is as follows:

[0077] Main Equipment

[0078] Reaction chamber: Provides reaction space, and ensures that the internal environment is clean and the vacuum degree is controllable.

[0079] Heating system: Heats the reaction chamber and substrate to the required temperature, usually using resistance heating, radio frequency heating, etc.

[0080] Gas supply system: accurately control the flow and ratio of carbon source gas, carrier gas, etc.

[0081] Vacuum system: removes air and other impurities from the chamber to create a low-pressure reaction environment.

[0082] Production steps

[0083] S221. System preparation: Place the barium titanate film substrate in S21 into the reaction chamber, evacuate the chamber and introduce inert gas for purge to remove impurity gases.

[0084] S222. Growth reaction: Heat the substrate to a suitable temperature, introduce carbon source gas and an appropriate amount of auxiliary gas such as hydrogen, the carbon source gas decomposes under the action of high temperature and catalyst, and carbon atoms are deposited on the surface of the substrate to grow into graphene.

[0085] S223. Film thickness control: By controlling the reaction time, gas flow, deposition temperature and other parameters, the BaTiO 3 The thickness of the ceramic membrane. Generally, the longer the reaction time and the greater the gas flow rate, the thicker the membrane. The membrane thickness is controlled between 5nm and 200nm.

[0086] S224. Post-treatment: After the reaction is completed, stop introducing gas and cool.

[0087] S23. Repeated stacking: Repeat S21 and S22. When the graphene film is generated, the left mask is left blank for odd-numbered times and the right mask is left blank for even-numbered times.

[0088] S24. When the stacking thickness reaches a preset range (1mm-2mm), remove the composite film layer composed of the ceramic film and the graphene film, and cut the composite film layer to the required length.

[0089] In actual production, the furnace body usually has a large length dimension, which is to meet the requirements of chemical vapor deposition and other processes for space and reaction conditions. When the ceramic film and graphene film are stacked and grown in the furnace body, since the length of the furnace body is much longer than the length of the composite film layer required for the final product, the generated composite film layer will grow continuously in the furnace body, and the length is far beyond the actual use requirements. If it is not cut, it cannot adapt to various capacitor packaging equipment and required modules of different sizes. Therefore, this embodiment needs to cut the composite film layer into the required size.

[0090] S25. Due to the staggered stacking of the films, two adjacent layers of graphene films can serve as two electrodes of a capacitor.

[0091] Metal is coated on the left and right sides of the cut composite film layer as the current collecting electrode of the capacitor, and the two adjacent graphene film layers in the cut composite film layer serve as the two electrodes of the capacitor.

[0092] The front and rear sides of the cut composite film layer are encapsulated with an insulating film.

[0093] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0094] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A graphene supercapacitor, characterized in that: include: Using ceramic as a dielectric matrix, graphene structures are alternately arranged on the left and right sides of the dielectric matrix, and the ceramic layers between adjacent graphene structures constitute a ceramic dielectric layer (3); The left and right sides of the dielectric substrate are coated with metal to serve as two current collecting electrodes (4) of the graphene supercapacitor.

2. A graphene supercapacitor according to claim 1, characterized in that: The dielectric matrix is ​​a rectangular parallelepiped ceramic body (1), and the left and right sides of the dielectric matrix are two side surfaces of the rectangular parallelepiped ceramic body (1) along the width direction; the graphene structure is a channel (2), and the channel (2) is filled with graphene to form a graphene film; A plurality of channels (2) are arranged at intervals on the rectangular ceramic body (1), the channels (2) are opened on the left and right sides of the rectangular ceramic body (1), the thickness of the channels (2) is along the thickness direction of the rectangular ceramic body (1) and the thickness of the channels (2) is equal to the thickness of the rectangular ceramic body (1); the width of the channels (2) is along the length direction of the rectangular ceramic body (1); the length of the channels (2) is along the width direction of the rectangular ceramic body (1) and the length of the channels (2) is less than the width of the rectangular ceramic body (1), and the channels (2) are parallel to each other; wherein the odd-numbered channels are opened on the right side of the rectangular ceramic body (1), and the even-numbered channels are opened on the left side of the rectangular ceramic body (1).

3. A graphene supercapacitor according to claim 1, characterized in that: The dielectric substrate is a ceramic film, and the graphene structure is a graphene film; The graphene film is deposited on the ceramic film, wherein the left side of the graphene film deposited an odd number of times is left blank, so that the left side of the graphene film is narrower than the ceramic film, and the right side of the graphene film deposited an even number of times is left blank, so that the right side of the graphene film is narrower than the ceramic film.

4. A graphene supercapacitor according to claim 1, characterized in that: The ceramic dielectric layer (3) has a thickness of 5 nm to 100 nm.

5. The graphene supercapacitor according to claim 1, characterized in that: The graphene structure has a thickness of 5nm-200nm.

6. A method for manufacturing a graphene supercapacitor, characterized in that: The following steps are involved: Obtaining a ceramic dielectric matrix, wherein the ceramic dielectric matrix comprises a ceramic film or a rectangular parallelepiped ceramic body (1); Graphene structures are arranged in an alternating manner in the ceramic dielectric matrix, wherein the graphene structures include graphene films or channels (2); wherein the ceramic films correspond to the graphene films, and the rectangular parallelepiped ceramic bodies (1) correspond to the channels (2); Metal is coated on the left and right sides of the ceramic dielectric substrate to serve as two current collecting electrodes (4) of the graphene supercapacitor.

7. The method for manufacturing a graphene supercapacitor according to claim 6, characterized in that: When the ceramic dielectric matrix is ​​a rectangular parallelepiped ceramic body (1), the left and right sides of the dielectric matrix are two side surfaces of the rectangular parallelepiped ceramic body (1) along the width direction, and the graphene structure is a channel (2), the method comprises: A rectangular ceramic body (1) is taken, and a plurality of channels (2) are cut on the left and right sides by laser, wherein the channels (2) are opened on the left and right sides of the rectangular ceramic body (1), the thickness of the channels (2) is along the thickness direction of the rectangular ceramic body (1) and the thickness of the channels (2) is equal to the thickness of the rectangular ceramic body (1); the width of the channels (2) is along the length direction of the rectangular ceramic body (1); the length of the channels (2) is along the width direction of the rectangular ceramic body (1) and the length of the channels (2) is less than the width of the rectangular ceramic body (1), and the channels (2) are parallel to each other; wherein odd-numbered channels are opened on the right side of the rectangular ceramic body (1), and even-numbered channels are opened on the left side of the rectangular ceramic body (1); Using airflow to blow out the debris from cutting in the rectangular ceramic body (1), and then using a vacuum cleaner to remove dust again; The cut rectangular ceramic body (1) is washed again with deionized water, and then heated to remove moisture; A side surface of the rectangular ceramic body (1) along the length direction is sealed with an insulating film, and graphene is injected into each channel (2) from another side surface along the length direction to produce the channel (2), and after the injection is completed, another side surface along the length direction is sealed with an insulating film; The left side and the right side of the rectangular ceramic body (1) are coated with metal respectively to produce a current collecting electrode (4).

8. The method for manufacturing a graphene supercapacitor according to claim 6, characterized in that: When the ceramic dielectric substrate is a ceramic film and the graphene structure is a graphene film, the method comprises: Fabrication of ceramic membranes using chemical vapor deposition; Depositing a graphene film on the ceramic film; Repeatedly stacking to generate the ceramic film and the graphene film, when the graphene film is generated, the left mask is left blank for odd-numbered times, and the right mask is left blank for even-numbered times; When the stacking thickness reaches a preset range, removing the composite film layer composed of the ceramic film and the graphene film, and cutting the composite film layer to a required length; Coating metal on the left and right sides of the cut composite film layer as two current collecting electrodes of the capacitor, and the two adjacent graphene film layers in the cut composite film layer as two electrodes of the capacitor; The front and rear sides of the cut composite film layer are encapsulated with an insulating film.

9. The method for manufacturing a graphene supercapacitor according to claim 8, characterized in that: The graphene film is generated by chemical vapor deposition.

10. The method for manufacturing a graphene supercapacitor according to claim 8, characterized in that: The preset range is 1 mm to 2 mm.

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