Anti-fuse switch

Abstract

The invention provides an anti-fuse switch. The anti-fuse switch comprises a first heating layer, a fusing connection layer and a second heating layer. The first heating layer is used for connecting a first electrode of an external heating circuit. The fusing connecting layer comprises a fusing piece and connecting pieces, the first surface of the fusing piece is connected with the first heating layer, the first surface of the fusing piece is opposite to the second surface of the fusing piece, the third surface of at least one connecting piece is isolated from the third surface of the fusing piece through a dielectric layer with a preset thickness, and the connecting pieces are used for connecting a first end point of the editable element. The first surface of the second heating layer is connected with the second surface of the fuse element, the second heating layer is used for being connected with a second electrode of the external heating circuit and a second end point of the editable element, and the heating coefficient of the first heating layer is larger than that of the second heating layer. After the external heating circuit is powered on, the fusing piece is fused and breaks down the dielectric layer, and the fusing piece is connected with the third face of the connecting piece, so that the editable element is short-circuited.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an anti-fuse switch. Background Art

[0002] At present, the development stage chip is often trimmed through the anti-fuse switch, that is, the original conduction area or cut-off area of ​​the anti-fuse switch is melted or connected through additional voltage or stress. At present, the polysilicon fuse type (interface fuse) anti-fuse switch with low cost and area occupation is the most commonly used trimming device, but the polysilicon fuse of the anti-fuse switch is easy to generate stress on the upper and lower sides when it is melted, which is easy to damage the related circuit structure, resulting in poor trimming effect of the chip, and even causing the chip to be scrapped. Summary of the invention

[0003] The present application provides an anti-fuse switch. The advantage of this anti-fuse switch is that it can be implemented without the use of an additional mask, has good stress control capabilities, can moderately guide the direction of stress generated by the anti-fuse switch when it is blown, and reduce the impact of stress in a preset direction on the chip, and has the advantage of low cost.

[0004] In a first aspect, an embodiment of the present application provides an anti-fuse switch, the anti-fuse switch comprising: a first heating layer, the first heating layer being used to connect to a first electrode of an external heating circuit; A fuse connection layer, the fuse connection layer comprising a fuse and a connection member, the first surface of the fuse is connected to the first heating layer, the first surface of the fuse is opposite to the second surface, the third surface of at least one of the connection members is isolated from the third surface of the fuse by a dielectric layer of a preset thickness, and the connection member is used to connect the first end point of the editable element; a second heating layer, wherein a first surface of the second heating layer is connected to a second surface of the fuse, the second heating layer is used to respectively connect a second electrode of the external heating circuit and a second end point of the editable element, a heating coefficient of the first heating layer is greater than a heating coefficient of the second heating layer, and the heating coefficient is a superposition of a heating capacity of the heating layer and a heat dissipation capacity around the connection; After the external heating circuit is powered on, the fuse is blown and the thermal strain generated by the blown fuse breaks through the dielectric layer, forming a connection with the third surface of the connector to short-circuit the editable element.

[0005] In some embodiments, the connecting member comprises an open ring, and the third surfaces of the two connecting members are isolated from the third surface of the fuse by the dielectric layer.

[0006] In some embodiments, the length of the first surface of the fuse element ranges from: .

[0007] In some embodiments, the shape of the first surface of the fuse includes: rectangle, cross and black-mouth shape.

[0008] In some embodiments, the anti-fuse switch further comprises: a first metal layer, the first metal layer is used to replace the first heating layer and connect to the first electrode of the external heating circuit, and the first metal layer is connected to the first surface of the first heating layer; The second metal layer is used to replace the second heating layer and is respectively connected to the second electrode of the external heating circuit and the second end of the editable element, and the second metal layer is connected to the second surface of the second heating layer.

[0009] In some embodiments, an area of ​​the first surface of the first metal layer is smaller than an area of ​​the first surface of the second metal layer.

[0010] In some embodiments, the first heating layer and the second heating layer are made of the same material, and a contact area between the first heating layer and the fuse is smaller than a contact area between the second heating layer and the fuse.

[0011] In some embodiments, the first heating layer and the second heating layer are made of different materials, and the resistance of the first heating layer is greater than the resistance of the second heating layer.

[0012] In some embodiments, the number of the first heating layers ranges from 1 to 5, and the number of the second heating layers ranges from 2 to 10.

[0013] In some embodiments, the preset thickness of the dielectric layer ranges from 1 nm to 1000 nm.

[0014] An embodiment of the present application provides an anti-fuse switch, comprising: a first heating layer, a fuse connection layer, and a second heating layer. The first heating layer is used to connect the first electrode of an external heating circuit. The fuse connection layer includes a fuse and a connector, the first surface of the fuse is connected to the first heating layer, the first surface of the fuse is opposite to the second surface, the third surface of at least one connector is isolated from the third surface of the fuse by a dielectric layer of a preset thickness, and the connector is used to connect the first end point of an editable element. The first surface of the second heating layer is connected to the second surface of the fuse, and the second heating layer is used to connect the second electrode of the external heating circuit and the second end point of the editable element respectively, and the heating coefficient of the first heating layer is greater than the heating coefficient of the second heating layer. After the external heating circuit is powered on, the fuse melts and breaks through the dielectric layer, forming a connection with the third surface of the connector to short-circuit the editable element. Through the above-mentioned anti-fuse switch, by setting the heating coefficient of the first heating layer to be greater than the heating coefficient of the second heating layer, when power is turned on, the charge passes from the first heating layer through the fuse to the second heating layer. Since the heat generated by the first heating layer is greater than the heat generated by the second heating layer and the carriers migrate and accumulate to the fuse and the second heating layer, the fuse is controlled to start to melt from the first surface close to the first heating layer, and then the melting stress is controlled to be released toward the third surface of the fuse, thereby reducing the stress toward the first surface and the stress toward the second surface of the anti-fuse switch when melting, and also reducing the impact on the circuit structure facing the second surface of the first heating layer, thereby increasing the available space for the chip layout, and without the need to add an additional mask layer, which has the advantage of reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0016] Figure 1 A schematic diagram of the structure of a first anti-fuse switch provided in an embodiment of the present application; Figure 2 A schematic top view of a fuse connection layer provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of a fuse provided in an embodiment of the present application; Figure 4 A schematic diagram of the structure of a second anti-fuse switch provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of a third anti-fuse switch provided in an embodiment of the present application; Figure 6A schematic diagram of the structure of a first trimming circuit provided in an embodiment of the present application; Figure 7 A schematic diagram of the structure of a second trimming circuit provided in an embodiment of the present application.

[0017] Figure Number: 400, trimming circuit; 300, external heating circuit; 200, editable component; 100, anti-fuse switch; 11, first heating layer; 12, fuse connection layer; 121, fuse; 122, connection; 13, second heating layer; 14, first metal layer; 15, second metal layer; S1, first surface; S2, second surface; S3, third surface. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] The flowcharts shown in the accompanying drawings are only examples and do not necessarily include all the contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may also be decomposed, combined or partially merged, so the actual execution order may change according to actual conditions.

[0020] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0021] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0022] See also Figure 1 , Figure 1 is a schematic diagram of the structure of the first anti-fuse switch provided in the embodiment of the present application. Figure 1 As shown, the anti-fuse switch 100 includes: a first heating layer 11 , a fuse connection layer 12 and a second heating layer 13 . The fuse connection layer 12 includes a fuse element 121 and a connection element 122 .

[0023] The first heating layer 11 is used to connect to a first electrode of the external heating circuit 300 .

[0024] It should be noted that the external heating circuit 300 is used to provide heating current for the first heating layer 11 , the fuse connection layer 12 , and the second heating layer 13 .

[0025] Exemplarily, the first heating layer 11 and the second heating layer 13 are both made of conductive materials, such as manganese-iron alloy or tungsten-iron alloy, and the melting points of the first heating layer 11 and the second heating layer 13 are both greater than the melting point of the fuse 121, thereby preventing the first heating layer 11 and the second heating layer 13 from being blown before the fuse 121 is blown.

[0026] The first surface S1 of the fuse 121 is connected to the first heating layer 11, the first surface S1 of the fuse 121 is opposite to the second surface S2, the third surface S3 of at least one connecting member 122 is isolated from the third surface S3 of the fuse 121 by a dielectric layer of a preset thickness, and the connecting member 122 is used to connect the first end point D1 of the editable element 200.

[0027] It should be noted that the editable element 200 includes a resistor and a capacitor. Figure 1 As shown, the first terminal D1 and the second terminal D2 of the editable element 200 are used to receive the control signal.

[0028] In some embodiments, the preset thickness T of the dielectric layer is in the range of 1 nm to 1000 nm, so that the fuse 121 can easily break through the dielectric layer after being blown, thereby improving the success rate of connection between the fuse 121 and the connector 122 .

[0029] Exemplarily, the fuse 121 is a sheet-shaped component, the planes where the long side and the wide side of the fuse 121 are located are the first surface S1 and the second surface S2 respectively, and the plane where the high side of the fuse 121 is located is the third surface S3. It should be noted that when other layers or other components are sheet-shaped, the first surface S1, the second surface S2 and the third surface S3 are the same as those of the fuse 121, and are not described in detail here.

[0030] The first surface S1 of the second heating layer 13 is connected to the second surface S2 of the fuse 121. The second heating layer 13 is used to connect the second electrode of the external heating circuit 300 and the second end of the editable element 200 respectively. The heating coefficient of the first heating layer 11 is greater than the heating coefficient of the second heating layer 13.

[0031] By setting the heating coefficient of the first heating layer 11 to be greater than the heating coefficient of the second heating layer 13, the fuse 121 is quickly heated while the first surface S1 and the second surface S2 of the fuse 121 are heated unevenly, and the charge is transferred from the first heating layer 11 to the second heating layer 13 through the fuse 121. This controls the second surface S2 of the fuse 121 to maintain its original shape when the first surface S1 of the fuse 121 begins to melt, and the carriers migrate and accumulate toward the second heating layer 13, thereby controlling the melting stress of the fuse 121 to be released toward the third surface S3 of the fuse 121, so as to prevent the circuit structure facing the second surface S2 of the fuse 121 from being destroyed.

[0032] After the external heating circuit 300 is powered on, the fuse 121 generates a melting stress and breaks through the dielectric layer, thereby forming a connection with the third surface S3 of the connector 122 to short-circuit the editable component 200 .

[0033] Exemplarily, after the external heating circuit 300 is powered on, the heat required for the fuse 121 to melt mainly comes from the first heating element and the second heating element, wherein the heating coefficient of the first heating element must be greater than the heating coefficient of the second heating element. This heating coefficient is the superposition of the heating capacity of the heating layer and the heat dissipation capacity around the connection. After the fuse 121 melts, the fuse 121 is connected to the connector 122, and the connector 122, the fuse 121 and the second heating layer 13 form a short-circuit channel between the first terminal D1 and the second terminal D2 of the editable element 200, so as to short-circuit the editable element 200, thereby rendering the editable element 200 inoperable, and thus completing the adjustment of the chip.

[0034] An embodiment of the present application provides an anti-fuse switch, comprising: a first heating layer, a fuse connection layer, and a second heating layer. The first heating layer is used to connect the first electrode of an external heating circuit. The fuse connection layer includes a fuse and a connector, the first surface of the fuse is connected to the first heating layer, the first surface of the fuse is opposite to the second surface, the third surface of at least one connector is isolated from the third surface of the fuse by a dielectric layer of a preset thickness, and the connector is used to connect the first end point of an editable element. The first surface of the second heating layer is connected to the second surface of the fuse, and the second heating layer is used to connect the second electrode of the external heating circuit and the second end point of the editable element respectively, and the heating coefficient of the first heating layer is greater than the heating coefficient of the second heating layer. After the external heating circuit is powered on, the fuse melts and breaks through the dielectric layer, forming a connection with the third surface of the connector to short-circuit the editable element. Through the above-mentioned anti-fuse switch, by setting the heating coefficient of the first heating layer to be greater than the heating coefficient of the second heating layer, when power is turned on, the heat generated by the first heating layer is greater than the heat generated by the second heating layer, thereby controlling the fuse to start melting from the first surface close to the first heating layer, and then controlling the release of the melting stress toward the third surface of the fuse, which can appropriately guide the direction of the stress generated by the anti-fuse switch when it melts, reduces the stress toward the first surface and the stress toward the second surface of the anti-fuse switch when it melts, and also reduces the impact on the circuit structure facing the second surface of the first heating layer, thereby increasing the available space for the chip layout, and does not require the addition of an additional mask layer, which has the advantage of reducing costs.

[0035] In order to more clearly introduce the technical solution of the present application, the technical solution of the present application will be introduced through specific embodiments below. It should be noted that the specific embodiments are used to expand the technical solution of the present application, but are not intended to limit the present application.

[0036] For example, all embodiments of the present application are implemented using a semiconductor 180nm process, wherein the minimum dielectric layer thickness T is 220nm, and the minimum metal length of the first metal layer 14 is The following specific embodiments all define the value ranges of their parameters based on the process used in the embodiments.

[0037] In some embodiments, see Figure 2 , Figure 2 is a top view schematic diagram of a fuse connection layer provided in an embodiment of the present application. Figure 2 As shown, the connecting member 122 includes an open ring, and the third surface S3 of the two connecting members 122 and the third surface S3 of the fuse 121 are isolated by a dielectric layer.

[0038] By changing the shape of the connecting member 122 and thereby changing the number of the third surfaces S3 of the connecting member 122 , the success rate of connection between the fuse 121 and the connecting member 122 can be increased.

[0039] In some embodiments, Figure 2 As shown, the length L of the first surface S1 of the fuse 121 has a value range of: .

[0040] By setting the length of the first surface S1 of the fuse 121, it is ensured that the fuse 121 has enough molten material to connect with the connector 122, thereby improving the connection stability and thus improving the chip trimming result.

[0041] In some embodiments, see Figure 3 , Figure 3 Schematic diagram of the structure of a fuse provided in an embodiment of the present application. Figure 3 As shown, the shapes of the first surface S1 of the fuse 121 include: rectangle, cross and black mouth. It should be noted that polygons based on the above shapes are within the protection scope of this application.

[0042] Exemplarily, different shapes have different welding effects. In addition to the above shapes, all existing shapes are within the protection scope of this application.

[0043] In some embodiments, see Figure 4 , Figure 4 is a schematic diagram of the structure of a second anti-fuse switch provided in an embodiment of the present application. Figure 4 As shown, the anti-fuse switch 100 further includes: a first metal layer 14 and a second metal layer 15. The first metal layer 14 is used to replace the first heating layer 11 to connect to the first electrode of the external heating circuit 300, and the first metal layer 14 is connected to the first surface S1 of the first heating layer 11. The second metal layer 15 is used to replace the second heating layer 13 to connect to the second electrode of the external heating circuit 300 and the second end of the editable element 200, and the second metal layer 15 is connected to the second surface S2 of the second heating layer 13.

[0044] Exemplarily, since the first heating layer 11 and the second heating layer 13 are small in size and difficult to weld, the first metal layer 14 and the second metal layer 15 are used to increase the operability of welding so as to facilitate connection with the external heating circuit 300 and the editable element 200 .

[0045] It should also be noted that the first metal layer 14 and the second metal layer 15 also have the function of maintaining structural stability to protect the corresponding circuit structure from being damaged during the fusing process.

[0046] At the same time, the first metal layer 14 and the second metal layer 15 also have the effect of heat conduction and heat dissipation.

[0047] In some embodiments, see Figure 5 , Figure 5is a schematic diagram of the structure of the third anti-fuse switch provided in the embodiment of the present application. Figure 5 The view of the anti-fuse switch 100 is a top view from a first surface S1 perpendicular to the first metal layer 14 (the first heating layer 11 and the second heating layer 13 are not shown in the figure).

[0048] The second metal layer 15 is: The first metal layer 14 is a polygonal metal layer in the shape of a “convex” character.

[0049] It should be noted that if Figure 4 The structural diagram of the second anti-fuse switch 100 is shown as follows Figure 5 The structural schematic diagram of the third anti-fuse switch 100 is a cross-sectional schematic diagram along line bb′.

[0050] In some embodiments, an area of ​​the first surface S1 of the first metal layer 14 is smaller than an area of ​​the first surface S1 of the second metal layer 15 .

[0051] By setting the area of ​​the first surface S1 of the first metal layer 14 to be smaller than the area of ​​the first surface S1 of the second metal layer 15, the thermal conductivity of the second metal layer 15 is better than that of the first metal layer 14, so that the heating speed of the first heating layer 11 is faster than that of the second heating layer 13.

[0052] In some embodiments, the first heating layer 11 and the second heating layer 13 are made of the same material, and the contact area between the first heating layer 11 and the fuse 121 is smaller than the contact area between the second heating layer 13 and the fuse 121 .

[0053] Through the above design, the resistance of the first heating layer 11 is greater than the resistance of the second heating layer 13 or the area of ​​the first metal layer 14 is smaller than the area of ​​the second metal layer 15, so that the heating coefficient of the first heating layer 11 is greater than the heating coefficient of the second heating layer 13.

[0054] In some embodiments, the first heating layer 11 and the second heating layer 13 are made of different materials, and the resistance of the first heating layer 11 is greater than the resistance of the second heating layer 13 .

[0055] Through the above design, the resistance of the first heating layer 11 is greater than the resistance of the second heating layer 13 or the area of ​​the first metal layer 14 is smaller than the area of ​​the second metal layer 15, so that the heating coefficient of the first heating layer 11 is greater than the heating coefficient of the second heating layer 13.

[0056] In some embodiments, the number of first heating layers 11 ranges from 1 to 5, and the number of second heating layers 13 ranges from 2 to 10.

[0057] like Figure 4As shown, the number of the first heating layer 11 is 1, and the number of the second heating layers 13 is 2.

[0058] Through the above design, the total resistance of the first heating layer 11 is in the range of 5ohm-10ohm, the total resistance of the second heating layer 13 is in the range of 4ohm-8ohm, and at the same time, the side length L1 of the first metal layer 14 is in the range of: , so that the side length L2 of the second metal layer 15 has a value range of , which is beneficial to quickly conduct the heat on the second heating layer 13 to the second metal layer 15, so that the heating coefficient of the first heating layer 11 is greater than the heating coefficient of the second heating layer 13.

[0059] In some embodiments, the preset thickness of the dielectric layer ranges from 220 nm to 440 nm.

[0060] In some other embodiments, the ratio of the preset thickness of the dielectric layer to the minimum dielectric layer thickness ranges from 1 to 2.

[0061] In this way, it is convenient for the fuse 121 to break through the dielectric layer after melting, thereby improving the success rate of connecting the fuse 121 and the connector 122 .

[0062] In some embodiments, see Figure 6 , Figure 6 is a schematic diagram of the structure of the first trimming circuit provided by the embodiment of the present application. Figure 6 As shown, the trimming circuit 400 includes: an anti-fuse switch 100 , an editable element 200 and an external heating circuit 300 .

[0063] Exemplarily, the external heating circuit 300 includes a preset voltage source VDD, a first switch tube QN and a second switch tube QM, wherein the first end of the first switch tube QN is connected to VDD, the second end of the first switch tube QN is connected to the first end of the anti-fuse switch 100, the second end of the anti-fuse switch 100 is connected to the first end of the second switch tube QM, and the second end of the second switch tube QM is grounded. By turning on the first switch tube QN and the second switch tube QM, a fuse current is provided to the anti-fuse switch 100, and the anti-fuse switch 100 is used to short-circuit the first terminal D1 and the second terminal D2 of the editable element 200.

[0064] In the above external heating circuit 300, the first switch tube QN is a PMOS, and the second switch tube QM is an NMOS. The switch tube is controlled to provide a fusing current, and the value range of the fusing current is: 90mA-100mA, and the fusing time is 1ms-100ms. It should be noted that in some other embodiments, only one of the first switch tube QN and the second switch tube QM is retained to allow the external heating circuit 300 to achieve complete functions.

[0065] In some embodiments, see Figure 7 , Figure 7 is a schematic diagram of the structure of the second trimming circuit provided in the embodiment of the present application. Figure 7 As shown, the trimming circuit 400 includes: a plurality of anti-fuse switches 100 , a plurality of programmable resistors and an external heating circuit 300 .

[0066] In the above-mentioned trimming circuit 400, the anti-fuse switch is controlled by the N-bit Bit signal, including N groups of fuse switches, specifically, N=8, corresponding to the first switch tubes QN1, ..., the first switch tube QN7 and the first switch tube QN8, and the corresponding editable resistors R1, ..., the editable resistor R7 and the editable resistor R8, and also corresponding to the first switch tubes QM1, ..., the first switch tube QM7 and the first switch tube QM8. The above-mentioned trimming circuit 400 performs a fusing action on the anti-fuse switch 100 according to the control of the selection signal (the N-bit Bit signal).

[0067] By using the trimming circuit 400 , the required layout area can be reduced without affecting the operation.

[0068] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. An anti-fuse switch, characterized in that: The anti-fuse switch comprises: a first heating layer, the first heating layer being used to connect to a first electrode of an external heating circuit; A fuse connection layer, the fuse connection layer comprising a fuse and a connection member, the first surface of the fuse is connected to the first heating layer, the first surface of the fuse is opposite to the second surface, the third surface of at least one of the connection members is isolated from the third surface of the fuse by a dielectric layer of a preset thickness, and the connection member is used to connect the first end point of the editable element; a second heating layer, wherein a first surface of the second heating layer is connected to a second surface of the fuse, the second heating layer is used to respectively connect a second electrode of the external heating circuit and a second end point of the editable element, and a heating coefficient of the first heating layer is greater than a heating coefficient of the second heating layer; After the external heating circuit is powered on, the fuse melts and breaks through the dielectric layer, forming a connection with the third surface of the connector to short-circuit the editable element.

2. The anti-fuse switch according to claim 1, wherein: The connecting piece comprises an open ring, and the third surfaces of the two connecting pieces are isolated from the third surface of the fuse by the dielectric layer.

3. The anti-fuse switch according to claim 2, wherein: The length of the first side of the fuse element has a value range of: .

4. The anti-fuse switch according to claim 1, wherein: The shapes of the first surface of the fuse include: rectangle, cross and black-mouth shape.

5. The anti-fuse switch according to claim 1, wherein: The anti-fuse switch also includes: a first metal layer, the first metal layer is used to replace the first heating layer and connect to the first electrode of the external heating circuit, and the first metal layer is connected to the first surface of the first heating layer; The second metal layer is used to replace the second heating layer and is respectively connected to the second electrode of the external heating circuit and the second end of the editable element, and the second metal layer is connected to the second surface of the second heating layer.

6. The anti-fuse switch according to claim 5, characterized in that: An area of ​​the first surface of the first metal layer is smaller than an area of ​​the first surface of the second metal layer.

7. The anti-fuse switch according to any one of claims 1 to 6, characterized in that: The first heating layer and the second heating layer are made of the same material, and a contact area between the first heating layer and the fuse is smaller than a contact area between the second heating layer and the fuse.

8. The anti-fuse switch according to any one of claims 1 to 6, characterized in that: The first heating layer and the second heating layer are made of different materials, and the resistance of the first heating layer is greater than the resistance of the second heating layer.

9. The anti-fuse switch according to any one of claims 1 to 6, characterized in that: The number of the first heating layers ranges from 1 to 5, and the number of the second heating layers ranges from 2 to 10.

10. The anti-fuse switch according to claim 1, wherein: The preset thickness of the dielectric layer ranges from 1 nm to 1000 nm.

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