Filtering antenna structure

Abstract

The invention relates to the technical field of wireless communication, and provides a filtering antenna structure, which comprises a first silicon-based dielectric layer, a first metal layer, a second silicon-based dielectric layer, a second metal layer, a third silicon-based dielectric layer, a third metal layer and a fourth silicon-based dielectric layer which are sequentially stacked and fixed, the first feed network structure is used for receiving externally transmitted energy in a first polarization direction and coupling the energy to the second silicon-based dielectric layer; the second feed network structure is used for receiving externally transmitted energy in a second polarization direction and coupling the energy in the first polarization direction and the energy in the second polarization direction to the third silicon-based dielectric layer; the third feed network structure receives energy excitation coupled by the first feed network structure and the second feed network structure; and the magnetoelectric dipole antenna structure on the fourth silicon-based dielectric layer is used for receiving energy coupled by the third feed network structure and performing filtering response. The filtering antenna structure has the characteristics of gain response adjustment and out-of-band filtering selection.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to a filtering antenna structure. Background Art

[0002] Antennas and filters are essential components of wireless RF front-ends. Antennas are used to receive and transmit signals, while filters selectively filter signals. In traditional wireless communication systems, they are designed independently and connected through transmission lines. This not only takes up extra space, but also brings cascade losses to the system.

[0003] Nowadays, this problem can be effectively solved by combining the two through integrated design, meeting the requirements of wireless communication systems for high integration, that is, filtering antennas. For single-line polarized antennas, the signal may produce polarization mismatch and other undesirable effects during transmission. The signal of the millimeter wave antenna will encounter relatively large losses during the propagation of the signal in the air. For this unfavorable situation, the millimeter wave antenna often needs to have high gain characteristics to compensate for the energy. Therefore, high-gain millimeter wave antennas will be in great demand in communication systems in the future.

[0004] However, the existing filtering antenna structure has a single response to high gain and poor filtering characteristics. Summary of the invention

[0005] In view of the above shortcomings of the prior art, the present invention proposes a filtering antenna structure to solve the problem of single high gain response and poor filtering characteristics of the prior filtering antenna structure.

[0006] In order to solve the above technical problems, the present invention adopts the following technical solutions: An embodiment of the present invention provides a filtering antenna structure, the filtering antenna structure comprising a first silicon-based dielectric layer, a first metal layer, a second silicon-based dielectric layer, a second metal layer, a third silicon-based dielectric layer, a third metal layer and a fourth silicon-based dielectric layer which are stacked and fixed in sequence; A first feeding circuit structure is formed on the first silicon-based dielectric layer, and the first feeding circuit structure is used to receive energy in a first polarization direction transmitted from the outside and couple it to the second silicon-based dielectric layer; A second feeding circuit structure is formed on the second silicon-based dielectric layer, and the second feeding circuit structure is used to receive energy in a second polarization direction transmitted from the outside, and couple the energy in the first polarization direction and the energy in the second polarization direction to the third silicon-based dielectric layer; wherein the first polarization direction and the second polarization direction are perpendicular to each other; A third feeding circuit structure is formed on the third silicon-based dielectric layer, and is used to receive energy excitation coupled by the first feeding circuit structure and the second feeding circuit structure; A magnetoelectric dipole antenna structure is formed on the fourth silicon-based dielectric layer, and the magnetoelectric dipole antenna structure is used to receive energy coupled by the third feeding circuit structure and perform filtering response.

[0007] Preferably, the first feeding circuit structure includes a plurality of first metal through holes arranged in a rectangular shape and etched on the first silicon-based dielectric layer, and a plurality of first metal pillars arranged in a rectangular shape and etched on the first silicon-based dielectric layer; the plurality of first metal through holes together form a first coaxial feeding port excitation cavity, the plurality of first metal pillars together form a first metal pillar cavity, and the first coaxial feeding port excitation cavity is connected to the first metal pillar cavity; a coupling groove is etched on the first metal layer, and the coupling groove is located in the first metal pillar cavity; the coupling groove is used to couple the energy transmitted by the first silicon-based dielectric layer to the second silicon-based dielectric layer.

[0008] Preferably, the long axis edge of the excitation cavity of the first coaxial feeding port is extended along the second polarization direction, and the short axis edge of the excitation cavity of the first coaxial feeding port is extended along the first polarization direction; The long axis of the first metal column cavity is extended along the first polarization direction, and the short axis of the first metal column cavity is extended along the second polarization direction; The width of the first metal column cavity is smaller than the length of the first coaxial feeding port excitation cavity.

[0009] Preferably, the second feeding circuit structure includes a plurality of second metal through holes arranged in a rectangular shape and etched in the second silicon-based dielectric layer, and a plurality of second metal pillars arranged in a rectangular shape and etched in the second silicon-based dielectric layer; the plurality of second metal through holes together form a second coaxial feeding port excitation cavity, the plurality of second metal pillars together form a second metal pillar cavity, and the second coaxial feeding port excitation cavity is connected to the second metal pillar cavity; the coupling slot couples the energy transmitted by the first silicon-based dielectric layer to the second metal pillar cavity.

[0010] Preferably, the metal through-hole waveguide for transmitting energy through the first silicon-based dielectric layer and the metal through-hole waveguide for transmitting energy through the second silicon-based dielectric layer are arranged orthogonally.

[0011] Preferably, the filtering antenna structure further comprises an orthogonal cross-shaped groove etched on the second metal layer, wherein the cross-shaped groove is used to couple energy transmitted by the first silicon-based dielectric layer and the second silicon-based layer to the third silicon-based dielectric layer.

[0012] Preferably, the third feeding circuit structure comprises a plurality of third metal through holes arranged in a rectangular shape and formed by etching in the third silicon-based dielectric layer, and a third metal column cavity surrounded by the plurality of third metal through holes; A plurality of first cross slits in a cross shape are etched on the third metal layer, and the plurality of first cross slits are evenly distributed above the third metal column cavity.

[0013] Preferably, the first cross gaps include four gaps, which are arranged in a matrix.

[0014] Preferably, the magnetoelectric dipole antenna structure includes a plurality of fourth metal through holes arranged in a rectangular shape and etched in the fourth silicon-based dielectric layer, a fourth metal column cavity surrounded by the plurality of fourth metal through holes, and a plurality of magnetoelectric dipole antennas evenly arranged and etched in the fourth silicon-based dielectric layer; an orthographic projection of the fourth metal column cavity in the direction of the third silicon-based dielectric layer is at least partially located within the range of the third metal column cavity; the magnetoelectric dipole antennas are located within the range of the fourth metal column cavity and are spaced apart from the hole walls of the fourth metal through holes, respectively, and each of the magnetoelectric dipole antennas is directly opposite to one of the first cross gaps.

[0015] Preferably, the magnetoelectric dipole antenna includes four fifth metal pillars etched on the fourth silicon-based dielectric layer and a metal patch bonded and fixed to each of the fifth metal pillars; the four metal patches are spaced apart from each other to form a second cross gap, and the second cross gap is arranged opposite to the first cross gap.

[0016] Compared with the related art, in an embodiment of the present invention, a first feeding circuit structure is used to receive energy in a first polarization direction transmitted externally and couple it to a second silicon-based dielectric layer; a second feeding circuit structure is used to receive energy in a second polarization direction transmitted externally, and couple the energy in the first polarization direction and the energy in the second polarization direction to a third silicon-based dielectric layer; the first polarization direction is perpendicular to the second polarization direction; the third feeding circuit structure receives energy excitation coupled by the first feeding circuit structure and the second feeding circuit structure; a magnetoelectric dipole antenna structure is used to receive energy coupled by the third feeding circuit structure, and perform filtering response, so as to improve the gain and directivity of the antenna; and at the same time, the out-of-band filtering selection characteristics of the gain response can be adjusted by adjusting the size of the magnetoelectric dipole antenna structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings: Figure 1 Schematic diagram of the structural decomposition of the filtering antenna structure provided by the embodiment of the present invention Figure 1 ; Figure 2 Schematic diagram of the structural decomposition of the filtering antenna structure provided by the embodiment of the present invention Figure 2 ; Figure 3 A side view of a filtering antenna structure provided by an embodiment of the present invention; Figure 4 A top view of a filtering antenna structure provided by an embodiment of the present invention; Figure 5 A curve diagram showing how the port reflection coefficient of the filtering antenna structure provided by an embodiment of the present invention varies with frequency; Figure 6 A curve diagram showing how the gain of the filtering antenna structure provided by an embodiment of the present invention varies with frequency; Figure 7 The radiation pattern of the filtering antenna structure provided by the embodiment of the present invention in the x-polarization direction at 25 GHz; Figure 8 The radiation pattern of the y-polarization direction of the filtering antenna structure provided in an embodiment of the present invention at 25 GHz.

[0018] Wherein, 100, filtering antenna structure, 1, first silicon-based dielectric layer, 11, first feeding circuit structure, 111, first metal through hole, 112, first metal column, 113, first coaxial feeding port excitation cavity, 114, first metal column cavity, 2, first metal layer, 21, coupling slot, 3, second silicon-based dielectric layer, 31, second feeding circuit structure, 311, second metal through hole, 312, second metal column, 313, second coaxial feeding port excitation cavity, 314, second metal column cavity body, 4, second metal layer, 41, cross-shaped groove, 5, third silicon-based dielectric layer, 51, third feeding circuit structure, 511, third metal through hole, 512, third metal column cavity, 6, third metal layer, 61, first cross gap, 7, fourth silicon-based dielectric layer, 71, magnetoelectric dipole antenna structure, 711, fourth metal through hole, 712, fourth metal column cavity, 713, magnetoelectric dipole antenna, 7131, fifth metal column, 7132, metal patch, 7133, second cross gap. DETAILED DESCRIPTION

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of the present application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0020] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] See also Figure 1-Figure 4 As shown, an embodiment of the present invention provides a filtering antenna structure 100, and the filtering antenna structure 100 includes a first silicon-based dielectric layer 1, a first metal layer 2, a second silicon-based dielectric layer 3, a second metal layer 4, a third silicon-based dielectric layer 5, a third metal layer 6, and a fourth silicon-based dielectric layer 7, which are stacked and fixed in sequence. The first silicon-based dielectric layer 1, the first metal layer 2, the second silicon-based dielectric layer 3, the second metal layer 4, the third silicon-based dielectric layer 5, the third metal layer 6, and the fourth silicon-based dielectric layer 7 are stacked in sequence along the z-axis direction.

[0023] A first feeding circuit structure 11 is formed on the first silicon-based dielectric layer 1, and the first feeding circuit structure 11 is used to receive energy in a first polarization direction (y-axis) transmitted from the outside and couple it to the second silicon-based dielectric layer 3. The first feeding circuit structure 11 is etched on the first silicon-based dielectric layer 1.

[0024] A second feeding circuit structure 31 is formed on the second silicon-based dielectric layer 3, and the second feeding circuit structure 31 is used to receive energy in a second polarization direction (x-axis) transmitted from the outside, and couple the energy in the first polarization direction and the energy in the second polarization direction to the third silicon-based dielectric layer 5; wherein the first polarization direction is perpendicular to the second polarization direction. The z-axis is perpendicular to the first polarization direction and the second polarization direction, respectively. The second feeding circuit structure 31 is etched on the second silicon-based dielectric layer 3.

[0025] A third feeding circuit structure 51 is formed on the third silicon-based dielectric layer 5 for receiving energy excitation coupled between the first feeding circuit structure 11 and the second feeding circuit structure 31. The third feeding circuit structure 51 is etched on the third silicon-based dielectric layer 5.

[0026] A magnetoelectric dipole antenna structure 71 is formed on the fourth silicon-based dielectric layer 7, and the magnetoelectric dipole antenna structure 71 is used to receive energy coupled by the third feeding circuit structure 51 and perform filtering response. The magnetoelectric dipole antenna structure 71 is etched on the fourth silicon-based dielectric layer 7.

[0027] Specifically, the energy excitation coupled by the first feeding circuit structure 11 and the second feeding circuit structure 31 is received by the third feeding circuit structure 51 and transmitted to the magnetoelectric dipole antenna structure 71 on the fourth silicon-based dielectric layer 7. The magnetoelectric dipole antenna structure 71 has a high-pass characteristic, so a bandpass filtering response can be achieved, while improving the gain and directivity of the antenna.

[0028] In this embodiment, the first feeding circuit structure 11 includes a plurality of first metal through holes 111 etched in a rectangular arrangement on the first silicon-based dielectric layer 1 and a plurality of first metal pillars 112 etched in a rectangular arrangement on the first silicon-based dielectric layer 1; the plurality of first metal through holes 111 together form a first coaxial feeding port excitation cavity 113, and the plurality of first metal pillars 112 together form a first metal pillar cavity 114, and the first coaxial feeding port excitation cavity 113 is connected to the first metal pillar cavity 114; a coupling groove 21 is etched on the first metal layer 2, and the coupling groove 21 is located in the first metal pillar cavity 114; the coupling groove 21 is used to couple the energy transmitted by the first silicon-based dielectric layer 1 to the second silicon-based dielectric layer 3.

[0029] Specifically, a row of dielectric integrated first feeding circuit structures 11 for transmitting energy is etched on the first silicon-based dielectric layer 1, which is used to transmit energy in a first polarization direction. At the initial end of the first feeding circuit structure 11, a first coaxial feeding port excitation cavity 113 is connected, which can trap out-of-band signals in the high-frequency band and produce a low-pass filter response. At the end of the first feeding circuit structure 11 is a row of closed metal pillars. At a certain distance from the end metal pillar, a coupling groove 21 is etched on the upper surface of the first metal layer 2, which can couple the energy in the first polarization direction transmitted from the first silicon-based dielectric layer 1 upward to the metal cavity of the second silicon-based dielectric layer 3.

[0030] By exciting the cavity 113 through the first coaxial feeding port, the energy outside the high-frequency band can be suppressed. At the out-of-band radiation zero frequency of the high-frequency band, the energy is confined in the cavity and cannot be transmitted to the metal waveguide for energy transmission, thereby suppressing the radiation of high-frequency out-of-band signals. By adjusting the size of the first coaxial feeding port excitation cavity 113, the position of the radiation zero point can be moved, thereby adjusting the frequency response of the antenna.

[0031] In this embodiment, the long axis edge of the first coaxial feeding port excitation cavity 113 extends along the second polarization direction, and the short axis edge of the first coaxial feeding port excitation cavity 113 extends along the first polarization direction; the long axis edge of the first metal column cavity 114 extends along the first polarization direction, and the short axis edge of the first metal column cavity 114 extends along the second polarization direction; the width of the first metal column cavity 114 is smaller than the length of the first coaxial feeding port excitation cavity 113.

[0032] In this embodiment, the second feeding circuit structure 31 includes a plurality of second metal through holes 311 arranged in a rectangular shape and etched in the second silicon-based dielectric layer 3, and a plurality of second metal pillars 312 arranged in a rectangular shape and etched in the second silicon-based dielectric layer 3; the plurality of second metal through holes 311 together form a second coaxial feeding port excitation cavity 313, and the plurality of second metal pillars 312 together form a second metal pillar cavity 314, and the second coaxial feeding port excitation cavity 313 is connected to the second metal pillar cavity 314; the coupling slot 21 is used to couple the energy transmitted by the first silicon-based dielectric layer 1 to the second metal pillar cavity 314.

[0033] Specifically, the second coaxial feeding port excitation cavity 313 is connected to the second metal column cavity 314. The three sides of the second metal column cavity 314 are surrounded by the metal walls of the second metal column 312, and the second coaxial feeding port excitation cavity 313 is formed together at the end of the second feeding circuit structure 31 through the second metal through hole 311, which can trap the out-of-band signal in the high frequency band and generate a low-pass filter response.

[0034] In this embodiment, the metal through hole waveguide for energy transmitted by the first silicon-based dielectric layer 1 is orthogonally arranged with the metal through hole waveguide for energy transmitted by the second silicon-based dielectric layer 3, so that the isolation between the energy in the first polarization direction and the energy in the second polarization direction is good.

[0035] In this embodiment, the filtering antenna structure 100 further includes an orthogonal cross-shaped groove 41 etched on the second metal layer 4, and the cross-shaped groove 41 is used to couple the energy transmitted by the first silicon-based dielectric layer 1 and the second silicon-based layer to the third silicon-based dielectric layer 5. An orthogonal cross-shaped groove 41 is etched on the second metal layer 4 above the second metal cavity in the second silicon-based dielectric layer 3, so that the energy in the first polarization direction from the first layer and the energy in the second polarization direction from the second layer can be coupled upward to the high-order mode metal cavity of the third silicon-based dielectric layer 5.

[0036] In this embodiment, the operating frequency of the port in the first polarization direction is 24.25-29.5 GHz; the operating frequency of the port in the second polarization direction is 24.8-30.5 GHz; the gain response of each port presents a high gain filtering characteristic. The out-of-band filtering selection characteristic of the gain response can be adjusted by adjusting the size of the cavity excited by the coaxial port or the size of the patch.

[0037] In this embodiment, the third feeding circuit structure 51 includes a plurality of third metal through holes 511 arranged in a rectangular shape and etched on the third silicon-based dielectric layer 5, and a third metal column cavity 512 surrounded by the plurality of third metal through holes 511; a plurality of first cross slits 61 in a cross shape are etched on the third metal layer 6, and the plurality of first cross slits 61 are evenly distributed above the third metal column cavity 512.

[0038] In this embodiment, the first cross slots 61 include four and are arranged in a matrix. The first cross slots 61 are arranged in a rectangular shape above the third metal column cavity 512 .

[0039] Specifically, the third metal column cavity 512 of the high-order mode receives energy excitation from the second silicon-based dielectric layer 3 below, which can excite multiple high-order modes, divide one part of energy into four parts, and then transmit the energy to the magnetoelectric dipole antenna structure 71 in the fourth silicon-based dielectric layer 7 through four first cross slots 61 etched at symmetrical positions on the third metal layer 6 above the third silicon-based dielectric layer, thereby realizing a bandpass filtering response, thereby improving the gain and directivity of the antenna.

[0040] In this embodiment, the third metal column cavity 512 of the third silicon-based dielectric layer 5 has multiple high-order modes, and the third metal column cavity 512 can excite TE140, TE410, TE340, and TE430 modes, and can simultaneously divide the energy of two orthogonal polarizations without causing mutual interference. The equally divided energy is respectively excited to four dual-polarized magneto-electric dipole antennas 713 through the first cross slot 61, thereby improving the gain.

[0041] In this embodiment, the magneto-electric dipole antenna structure 71 includes a plurality of fourth metal through holes 711 arranged in a rectangular shape and etched in the fourth silicon-based dielectric layer 7, a fourth metal column cavity 712 surrounded by the plurality of fourth metal through holes 711, and a plurality of magneto-electric dipole antennas 713 evenly arranged and etched in the fourth silicon-based dielectric layer 7; the orthographic projection of the fourth metal column cavity 712 toward the third silicon-based dielectric layer 5 is at least partially located within the range of the third metal column cavity 512; the magneto-electric dipole antennas 713 are located within the range of the fourth metal column cavity 712 and are spaced apart from the hole walls of the fourth metal through holes 711, respectively, and each of the magneto-electric dipole antennas 713 is directly opposite to one of the first cross gaps 61.

[0042] The plurality of magnetoelectric dipole antennas 713 include four, and the sizes of the four magnetoelectric dipole antennas 713 are completely the same. The magnetoelectric dipole antenna 713 has a high-pass radiation characteristic curve, and has a radiation zero point in a frequency band lower than the operating frequency. By adjusting the size of the magnetoelectric dipole patch, the frequency of the radiation zero point can be moved, and the frequency response of the antenna can be adjusted.

[0043] In this embodiment, the magnetoelectric dipole antenna 713 includes four fifth metal pillars 7131 etched and formed on the fourth silicon-based dielectric layer 7 and metal patches 7132 attached and fixed to each of the fifth metal pillars 7131; the four metal patches 7132 are spaced apart from each other to form a second cross gap 7133, and the second cross gap 7133 is arranged opposite to the first cross gap 61. Optionally, the orthographic projection of the second cross gap 7133 in the direction of the third silicon-based dielectric layer 5 completely falls within the range of the first cross gap 61.

[0044] Specifically, the four magnetoelectric dipole antennas 713 are of exactly the same size, and each magnetoelectric dipole antenna 713 is composed of four short-circuited fifth metal pillars 7131 and four metal patches 7132 connected to each fifth metal pillar 7131. Since the magnetoelectric dipole antenna 713 has a high-pass characteristic, the silicon-based medium-based antenna can achieve a bandpass filtering response, and the magnetoelectric dipole antenna 713 is surrounded by four rows of short-circuited fourth metal through holes 711, further improving the gain and directivity of the antenna.

[0045] In this embodiment, the energy in the first polarization direction (y-axis) of the dual-polarized filtering antenna structure 100 is excited by the coaxial feeding port of the cavity 113 of the first coaxial feeding port in the first silicon-based dielectric layer 1, the metal column transmission structure in the first silicon-based dielectric layer 1, the coupling groove 21 between the first silicon-based dielectric layer 1 and the second silicon-based dielectric layer 3, the second metal column cavity 314 in the second silicon-based dielectric layer 3, the cross groove 41 between the second silicon-based dielectric layer 3 and the third silicon-based dielectric layer 5, the third metal column cavity 512 in the third silicon-based dielectric layer 5, the first cross gap 61 between the third silicon-based dielectric layer 5 and the fourth silicon-based dielectric layer 7, and the magneto-electric dipole antenna 713 in the fourth silicon-based dielectric layer 7 to form an antenna channel.

[0046] In this embodiment, the energy in the second polarization direction (x-axis) of the dual-polarized filtering antenna structure 100 is excited by the coaxial feeding port of the second coaxial feeding port in the second silicon-based dielectric layer 3, the metal column transmission structure in the second silicon-based dielectric layer 3, the second metal column cavity 314 of the second silicon-based dielectric layer 3, the cross groove 41 between the second silicon-based dielectric layer 3 and the third silicon-based dielectric layer 5, the third metal column cavity 512 in the third silicon-based dielectric layer 5, the first cross gap 61 between the third silicon-based dielectric layer 5 and the fourth silicon-based dielectric layer 7, and the magneto-electric dipole antenna 713 in the fourth silicon-based dielectric layer 7 to form an antenna channel.

[0047] In the specific implementation of the present invention, the energy in the first polarization direction and the energy in the second polarization direction are respectively started from the first coaxial feeding port excitation cavity 113 and the second coaxial feeding port excitation cavity 313, pass through the first metal column cavity 114 and the second metal column cavity 314 formed by the metal column, and couple the energy upward through the coupling groove 21, the first cross gap 61 and the cross gap etched on the metal layer, and then radiate outward through the magnetoelectric dipole antenna 713. Figure 5 shows how the reflection coefficient of the port for x-polarization and the port for y-polarization varies with frequency. Figure 6 The gain of the two polarization ports is shown as a function of frequency. Figure 7 is the radiation pattern of x-polarization at 25 GHz, Figure 8 It is the radiation pattern of the y-polarization direction at 25 GHz. From the above, it can be seen that the out-of-band filtering selection characteristics of the gain response can be adjusted by adjusting the size of the cavity excited by the coaxial port or the size of the patch.

[0048] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims

1. A filtering antenna structure, characterized in that: The filtering antenna structure comprises a first silicon-based dielectric layer, a first metal layer, a second silicon-based dielectric layer, a second metal layer, a third silicon-based dielectric layer, a third metal layer and a fourth silicon-based dielectric layer which are stacked and fixed in sequence; A first feeding circuit structure is formed on the first silicon-based dielectric layer, and the first feeding circuit structure is used to receive energy in a first polarization direction transmitted from the outside and couple it to the second silicon-based dielectric layer; A second feeding circuit structure is formed on the second silicon-based dielectric layer, and the second feeding circuit structure is used to receive energy in a second polarization direction transmitted from the outside, and couple the energy in the first polarization direction and the energy in the second polarization direction to the third silicon-based dielectric layer; wherein the first polarization direction and the second polarization direction are perpendicular to each other; A third feeding circuit structure is formed on the third silicon-based dielectric layer, and is used to receive energy excitation coupled by the first feeding circuit structure and the second feeding circuit structure; A magnetoelectric dipole antenna structure is formed on the fourth silicon-based dielectric layer, and the magnetoelectric dipole antenna structure is used to receive energy coupled by the third feeding circuit structure and perform filtering response.

2. The filtering antenna structure according to claim 1, characterized in that: The first feeding circuit structure includes a plurality of first metal through holes arranged in a rectangular shape and etched on the first silicon-based dielectric layer, and a plurality of first metal pillars arranged in a rectangular shape and etched on the first silicon-based dielectric layer; the plurality of first metal through holes together form a first coaxial feeding port excitation cavity, the plurality of first metal pillars together form a first metal pillar cavity, and the first coaxial feeding port excitation cavity is connected to the first metal pillar cavity; a coupling groove is etched on the first metal layer, and the coupling groove is located in the first metal pillar cavity; the coupling groove is used to couple the energy transmitted by the first silicon-based dielectric layer to the second silicon-based dielectric layer.

3. The filtering antenna structure according to claim 2, characterized in that: The long axis edge of the first coaxial feeding port excitation cavity is extended along the second polarization direction, and the short axis edge of the first coaxial feeding port excitation cavity is extended along the first polarization direction; The long axis of the first metal column cavity is extended along the first polarization direction, and the short axis of the first metal column cavity is extended along the second polarization direction; The width of the first metal column cavity is smaller than the length of the first coaxial feeding port excitation cavity.

4. The filtering antenna structure according to claim 2, characterized in that: The second feeding circuit structure includes a plurality of second metal through holes arranged in a rectangular shape and etched in the second silicon-based dielectric layer, and a plurality of second metal pillars arranged in a rectangular shape and etched in the second silicon-based dielectric layer; the plurality of second metal through holes together form a second coaxial feeding port excitation cavity, the plurality of second metal pillars together form a second metal pillar cavity, and the second coaxial feeding port excitation cavity is connected to the second metal pillar cavity; the coupling slot couples the energy transmitted by the first silicon-based dielectric layer to the second metal pillar cavity.

5. The filtering antenna structure according to claim 4, characterized in that: The metal through-hole waveguide for energy transmission through the first silicon-based dielectric layer and the metal through-hole waveguide for energy transmission through the second silicon-based dielectric layer are arranged orthogonally.

6. The filtering antenna structure according to claim 4, characterized in that: The filtering antenna structure further includes an orthogonal cross-shaped groove etched on the second metal layer, and the cross-shaped groove is used to couple the energy transmitted by the first silicon-based dielectric layer and the second silicon-based layer to the third silicon-based dielectric layer.

7. The filtering antenna structure according to claim 1, characterized in that: The third feeding circuit structure includes a plurality of third metal through holes arranged in a rectangular shape and formed by etching in the third silicon-based dielectric layer, and a third metal column cavity surrounded by the plurality of third metal through holes; A plurality of first cross-shaped slits are etched on the third metal layer, and the plurality of first cross-shaped slits are evenly distributed above the third metal column cavity.

8. The filtering antenna structure according to claim 7, characterized in that: The first cross gaps include four and are arranged in a matrix.

9. The filtering antenna structure according to claim 7, characterized in that: The magnetoelectric dipole antenna structure comprises a plurality of fourth metal through holes arranged in a rectangular shape and formed by etching in the fourth silicon-based dielectric layer, a fourth metal column cavity surrounded by the plurality of fourth metal through holes, and a plurality of magnetoelectric dipole antennas evenly arranged and formed by etching in the fourth silicon-based dielectric layer; the orthographic projection of the fourth metal column cavity toward the third silicon-based dielectric layer is at least partially located within the range of the third metal column cavity; the magnetoelectric dipole antennas are located within the range of the fourth metal column cavity and are spaced apart from the hole walls of the fourth metal through holes, respectively, and each of the magnetoelectric dipole antennas is directly opposite to one of the first cross gaps.

10. The filtering antenna structure according to claim 9, characterized in that: The magnetoelectric dipole antenna includes four fifth metal pillars etched on the fourth silicon-based dielectric layer and a metal patch attached and fixed to each of the fifth metal pillars; the four metal patches are spaced apart from each other to form a second cross gap, and the second cross gap is arranged opposite to the first cross gap.

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