Ultra-wideband notch antenna for 5G millimeter wave communication systems

Abstract

The present invention discloses an ultra-wideband notch antenna for a 5G millimeter wave communication system, comprising a first metal layer, a second metal layer and a third metal layer; the second metal layer is a metal ground, the third metal layer is a feeding part, and the first metal layer is a radiating part, comprising a radiating patch and a parasitic patch; the radiating patch is a dipole structure, comprising two dipole arms, and the end of each dipole arm is bent inward on the side away from the symmetry axis; the parasitic patch comprises a first parasitic patch and a second parasitic patch, the first parasitic patch is located outside the end of each dipole arm, and is used to excite a current in the same direction as the dipole arm within the working frequency band to improve the impedance matching of the antenna; the second parasitic patch is located between the ends of each dipole arm, and is equivalent to a half-wavelength resonator at the center frequency of the required filtering band. When the antenna operates within this frequency band, the surface current of the antenna will be concentrated on the parasitic patch, thereby causing impedance mismatch and achieving effective filtering of this frequency band.

Description

Technical Field

[0001] The present invention belongs to the field of wireless communication technology and relates to a 5G millimeter wave communication system antenna, and in particular to an ultra-wideband notch antenna for a 5G millimeter wave communication system. Background Art

[0002] With the rapid development of modern wireless communication systems, the demand for high speed, high capacity, and low latency in communication frequencies is increasing. The millimeter wave band has attracted widespread attention due to its abundant available frequency resources. For example, the N257 (26.5–29.5 GHz), N258 (24.25–27.5 GHz), N259 (39.5–43.5 GHz), and N260 (37–40 GHz) bands have been licensed for 5G millimeter wave communications. To improve system compatibility, communication systems need to cover as many frequency bands as possible. Therefore, the design of ultra-wideband millimeter wave antennas capable of covering multiple frequency bands has important research value and application prospects.

[0003] However, ultra-wideband antennas cover an extremely broad spectrum, and in practical applications, they are susceptible to interference from certain narrowband frequency bands, significantly impacting overall system performance. To address this issue, effective filtering of the interfering frequency bands is often required. Traditional filtering methods achieve this by adding filters to the antenna. However, this approach often increases antenna size, limiting the feasibility of miniaturized designs. In contrast, ultra-wideband notch antennas, through their inherent notch structure, filter within a specific frequency band, effectively suppressing interference and optimizing spectrum resource utilization. Consequently, they have attracted considerable attention in recent years.

[0004] In 2023, scholars such as Qingquan Tan and Kuikui Fan proposed a compact ultra-wideband planar folded dipole antenna. Based on the half-wavelength dipole, the antenna reduces the input resistance of the antenna by placing two half-wavelength dipoles in parallel, achieving broadband impedance matching, and adopts a coupling slot feeding method to feed the antenna unit. The capacitance provided by the coupling slot can offset the inductance generated by the parallel folded dipole, thereby improving the impedance matching in the low-frequency band. On this basis, the end of the dipole is folded, which greatly reduces the size of the antenna. The final antenna unit is 0.53λ c ×0.53λ c ×0.15λ c (where λ c An impedance bandwidth of better than 64% is achieved within a size of (the free space wavelength at the center frequency).

[0005] In 2024, scholars such as Jiawang Li and Yuanwei Zhu proposed a millimeter-wave ultra-wideband antenna with a hybrid resonant mode. This antenna unit combines multiple resonant modes, including slot resonant mode, patch resonant mode, quasi-monopole resonant mode, and microstrip line resonant mode with an open terminal. By flexibly designing the resonant frequency of each mode, the antenna unit successfully achieved ultra-wideband performance. After processing and field measurement verification, the antenna unit achieved an impedance bandwidth exceeding 69.4%. Both of the above units achieve ultra-wideband operation in the millimeter-wave band, but they do not have a notch structure, making it difficult to effectively filter interference bands without adding a filter.

[0006] In 2023, Z. Zhao and other scholars proposed a miniaturized antenna with multiple notched bands. This antenna achieves notched bands in five different frequency bands through notched band branches at the center of the radiating patch, spiral parasitic patches on both sides of the feed line, and long and short parasitic patches at the bottom of the dielectric plate. Test results show that the antenna's bandwidth covers 2.56-12.7 GHz, and the antenna's notched bands are 2.58-3.21 GHz, 4.05-4.29 GHz, 5-5.64 GHz, 8.60-9.05 GHz, and 9.20-10.32 GHz, respectively. The notched bands in the 4.05-4.29 GHz and 8.60-9.05 GHz bands are achieved through spiral parasitic patches on both sides of the feed line, while the notched bands in the 5-5.64 GHz and 9.20-10.32 GHz bands are achieved through long and short parasitic patches at the bottom of the dielectric plate, respectively.

[0007] In 2024, H. Gan et al. proposed a high-gain array antenna loaded with parasitic patches. To achieve broadband impedance matching, this antenna was loaded with three types of parasitic patches. Loading the first square parasitic patch above the radiating patch increased the antenna's relative bandwidth from 1.91% to 6.38%. Further optimization of the slot structure increased the bandwidth to 20.85%. Finally, loading two layers of rectangular patches increased the antenna's bandwidth while preventing warping of the antenna's dielectric plate. Test results showed that the -10dB bandwidth of the 8×8 array covered 85.2–110 GHz, with a relative bandwidth exceeding 26.6%.

[0008] Through the above analysis, the existing technology mainly has the following deficiencies:

[0009] (1) The bandwidth of existing millimeter-wave ultra-wideband antennas is relatively narrow, and the relative bandwidth of most antennas is less than 70%, so there is still a lot of room for expansion.

[0010] (2) Some existing millimeter-wave ultra-wideband antennas do not have a notch structure and cannot effectively avoid the adverse effects of interference frequency bands on system performance.

[0011] (3) Most existing ultra-wideband notch antennas operate at low frequencies and face significant adaptability challenges when used in antenna arrays, especially tightly coupled array antennas. Summary of the Invention

[0012] In order to overcome the above-mentioned shortcomings of the narrow bandwidth of millimeter wave antennas in the prior art and the inability to effectively avoid the influence of interference frequency bands, and the low operating frequency of most existing ultra-wideband notch antennas and low adaptability when applied to antenna arrays, especially tightly coupled array antennas, the purpose of the present invention is to provide an ultra-wideband notch antenna for 5G millimeter wave communication systems, which can cover the 15.97-45.55GHz frequency band, avoiding the problem of arranging multiple antennas to adapt to different 5G millimeter wave communication frequency bands. At the same time, by loading parasitic patches, it acts as a half-wavelength resonator at the center frequency of the interference frequency band. When the antenna operates within the interference frequency band, the surface current of the antenna will be concentrated on the parasitic patch, resulting in impedance mismatch, thereby achieving effective filtering of the interference frequency band. The antenna has a simple structure, is easy to process, and has important practical engineering application value.

[0013] In order to achieve the above object, the technical solution adopted by the present invention is:

[0014] An ultra-wideband notch antenna for a 5G millimeter wave communication system, comprising a first metal layer, a second metal layer, and a third metal layer;

[0015] The first metal layer is a radiating portion, comprising a radiating patch and a parasitic patch; the radiating patch is a dipole structure, comprising two axially symmetrical dipole arms, with the end of each dipole arm bent inward on a side away from the axis of symmetry; the parasitic patch comprises a first parasitic patch and a second parasitic patch, wherein the first parasitic patch is located outside the end of each dipole arm and is used to excite a current in the same direction as the dipole arm within the operating frequency band; the second parasitic patch is located between the ends of each dipole arm and is used to achieve filtering in a certain frequency band of the operating frequency band;

[0016] The second metal layer is a metal ground and is electrically connected to the radiation patch;

[0017] The third metal layer is a feeding part, which feeds power to the radiation patch through the H-shaped coupling slot etched on the second metal layer.

[0018] In one embodiment, the antenna further comprises a first dielectric layer, an adhesive layer, and a second dielectric layer;

[0019] The first metal layer is located on the upper surface of the first dielectric layer, and the second metal layer and the third metal layer are located on the upper surface and the lower surface of the second dielectric layer respectively; the adhesive layer is used to bond the first dielectric layer and the second dielectric layer.

[0020] In one embodiment, three metal holes are provided in the unbent portion of each dipole arm, and the metal holes penetrate the first dielectric layer and the adhesive layer and are connected to the second metal layer.

[0021] In one embodiment, the second metal layer covers the entire upper surface of the second dielectric layer, and an H-shaped coupling slot is etched thereon that is symmetrical about its center. The H-shaped coupling slot consists of a main slot and two slot branches. The main slot is opposite to the projection of the symmetry axis of the two dipole arms. The two slot branches are vertically connected to the main slot near the end, and the width of the main slot is greater than the width of the slot branches.

[0022] In one embodiment, the slot branch is opposite to the projections of the bending parts of the two dipole arms.

[0023] In one embodiment, the third metal layer is a microstrip feeder designed based on a T-junction power divider, and its two feeder branch projections are located between the connection between the second metal layer and the radiation patch and the gap branch, and are parallel to the gap branch, with the end being a T-shaped structure.

[0024] In one embodiment, the dipole arms are designed to be of equal width, with rounded corners at the bends, and the distances between the two ends of a dipole arm and the second parasitic patch therebetween are equal.

[0025] In one embodiment, there are four first parasitic patches, which excite a current in the same direction as the dipole arm within the strip.

[0026] In one embodiment, there are two second parasitic patches, and the length of the second parasitic patches is used to adjust the in-band filtering frequency band. When the length of the second parasitic patches increases, the filtering frequency band moves toward low frequency.

[0027] In one embodiment, the total length of the two second parasitic patches is half the wavelength of the microstrip line at the center frequency of the filtering band.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] First, the present invention employs first parasitic patches, including but not limited to rectangular or semicircular shapes, on the sides of each dipole arm. This pattern is not limited to this type of placement; more patches can be used for even better performance. These first parasitic patches stimulate currents in the same direction as the dipole arms within the operating frequency band, further improving antenna performance. When the antenna is unloaded with a resonant structure, it achieves a relative bandwidth of 87.7%. This significantly extends the bandwidth compared to other millimeter-wave ultra-wideband antennas.

[0030] Second, the present invention incorporates a second parasitic patch between the ends of the two dipole arms, including but not limited to rectangular or T-shaped patches. This method achieves notching because these second parasitic patches act as half-wavelength resonators at the center frequency of the corresponding filtering band. When the antenna operates within this frequency range, the surface current on the antenna concentrates on the second parasitic patch, resulting in an impedance mismatch and filtering within that frequency range. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of the three-dimensional structure of the millimeter-wave ultra-wideband notch antenna of the present invention is given.

[0032] Figure 2 A top view of the antenna of the present invention is given, showing the structures of the first and second metal layers.

[0033] Figure 3 A top view of the antenna of the present invention is given, showing the structure of the first metal layer.

[0034] Figure 4 A top view of the antenna of the present invention is given, showing the structures of the second and third metal layers.

[0035] Figure 5 The reflection coefficient simulation result diagram of the antenna of the present invention is given.

[0036] Figure 6 The influence of whether the first parasitic patch of the antenna of the present invention is loaded or not on the antenna reflection coefficient is given.

[0037] Figure 7 The influence of the length of the second parasitic patch of the antenna of the present invention on the antenna reflection coefficient is given.

[0038] Figure 8 The gain simulation result diagram of the antenna of the present invention is given.

[0039] Figure 9 The simulated radiation patterns of the antenna of the present invention at 24 and 41.4 GHz are given; among them, (a) is the E-plane simulated radiation pattern of the antenna at 24 GHz; (b) is the H-plane simulated radiation pattern of the antenna at 24 GHz; (c) is the E-plane simulated radiation pattern of the antenna at 41.4 GHz; and (d) is the H-plane simulated radiation pattern of the antenna at 41.4 GHz. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0041] In view of the shortcomings of some existing millimeter wave antennas that have narrow bandwidth and cannot effectively avoid the influence of interference frequency bands, the present invention proposes a millimeter wave ultra-wideband notch antenna.

[0042] like Figure 1 、 Figure 2 、 Figure 3 and Figure 4 As shown, the antenna of the present invention mainly includes a first metal layer 1, a second metal layer 5 and a third metal layer 7. It is easy to understand that when the present invention refers to the first layer, the second layer and the like, it means that these layers are different layers along the vertical direction.

[0043] The first metal layer 1 is the radiating portion of the present invention and includes a radiating patch 8 and a parasitic patch. Radiating patch 8 is a dipole structure, comprising two axially symmetrical dipole arms. The ends of each dipole arm bend inward on the side away from the axis of symmetry, forming an unclosed semicircular ring-like structure. The parasitic patch is a key feature of the present invention and includes a first parasitic patch 9 and a second parasitic patch 10.

[0044] The first parasitic patch 9 is located outside the end of each dipole arm. "Outside" here refers to the side away from the bending direction, that is, the side away from the axis of symmetry of the individual dipole arms. By loading the first parasitic patch 9 here, a current in the same direction as the dipole arm is excited within the operating frequency band, thereby changing the current distribution in the radiating portion. Furthermore, the coupling between the first parasitic patch 9 and the radiating patch 8 helps smooth out changes in the antenna's reactance at high frequencies, further optimizing the antenna's impedance matching performance.

[0045] The second parasitic patch 10 is located between the ends of each dipole arm, essentially being "sandwiched" by the two dipole ends but spaced apart from them. By placing the second parasitic patch 10 there, it acts as a half-wavelength resonator at the center frequency of the filtering band. When the antenna operates within the corresponding frequency band, the surface current of the antenna concentrates on the second parasitic patch 10, thereby stimulating a strong resonance. This resonance causes an impedance mismatch in the antenna, preventing energy from being effectively radiated into free space, ultimately achieving filtering within that frequency band.

[0046] The second metal layer 5 is the metal ground of the present invention, which is electrically connected to the radiation patch 8. The third metal layer 7 is the feeding part of the present invention, which is configured to be able to feed power to the radiation patch 8 through the H-shaped coupling slot 11 etched on the second metal layer 5.

[0047] In a specific embodiment of the present invention, two dielectric layers are provided, namely a first dielectric layer 3 and a second dielectric layer 6, to support the metal layers. The first metal layer 1 is printed on the upper surface of the first dielectric layer 3, the second metal layer 5 is printed on the upper surface of the second dielectric layer 6, and the third metal layer 7 is printed on the lower surface of the second dielectric layer 6. For example, the second metal layer 5 can also be printed on the lower surface of the first dielectric layer 3. In the present invention, the first metal layer 1, the second metal layer 5, and the third metal layer 7 are arranged sequentially from top to bottom, so that the first dielectric layer 3 is located above the second dielectric layer 6, and the two can be bonded together by an adhesive layer 4.

[0048] In a specific embodiment of the present invention, a number of metal holes 2 are evenly arranged in a row in the middle position of each dipole arm, that is, in the central area of ​​the unbent part, to electrically connect the radiation patch 8 and the second metal layer 5, so as to achieve a relatively uniform distribution of resonance points within the frequency band. The present invention designs three metal holes 2 to enable the antenna to demonstrate the potential for ultra-wideband performance. The number of metal holes 2 has a great influence on the antenna performance. If the number is changed, the antenna needs to be readjusted. This embodiment designs the number of metal holes 2 on each dipole arm to be three, and there are a total of six metal holes 2 on the two dipole arms. Each metal hole 2 passes through the first dielectric layer 3 and the adhesive layer 4, connecting the dipole arm to the second metal layer 5.

[0049] In a specific embodiment of the present invention, the second metal layer 5 covers the entire surface of the dielectric layer in which it is located, and an H-type coupling gap 11 is etched in the middle position. The overall structure of the H-type coupling gap 11 is symmetrical about the center of the second metal layer 5. It consists of a main gap and two gap branches. The main gap and the gap branches are both long strips. The width of the main gap is greater than the width of the gap branches, and is vertically connected to the gap branches. The length direction of the main gap is parallel to the symmetry axis of the two dipole arms, and it is best to be able to project onto the symmetry axis. The two gap branches are connected near the end of the main gap, that is, the main gap can continue to extend a part at the connection. The specific connection position of the gap branch can be controlled to be opposite to the projection of the bend of the two dipole arms.

[0050] In a specific embodiment of the present invention, the third metal layer 7 is a microstrip feeder designed based on a T-junction power divider, and its two feeder branch projections are located between the connection between the second metal layer 5 and the radiation patch 8 and the gap branch, and are parallel to the gap branch, and the end is a T-shaped structure.

[0051] In a specific embodiment of the present invention, the dipole arms are designed to be of equal width, and the bends are rounded to improve the reflection coefficient. The distances between the two ends of a dipole arm and the second parasitic patch 10 therebetween are equal. For example, the distance range here can be 0.22mm-0.3mm.

[0052] In a specific embodiment of the present invention, four first parasitic patches 9 are provided to excite a current in the same direction as the dipole arms within the band. To achieve optimal excitation, the length of the first parasitic patches 9 should be adjusted according to the antenna's impedance. During design using simulation software, parameter sweeps can be used to analyze the effect of different first parasitic patch lengths on the smoothness of the antenna's input impedance curve. Furthermore, consideration should be given to the potential degradation of high-frequency reflection coefficients caused by excessive patch length. Ultimately, based on the simulation analysis results, an appropriate patch length is selected to further improve the antenna's impedance matching.

[0053] The specific shape of the first parasitic patch 9 loaded in the present invention includes but is not limited to a rectangular, semicircular, or annular shape, and the number of the first parasitic patch 9 may be greater to achieve better results. These patches excite currents in the same direction as the dipole arms within the operating frequency band, thereby improving the performance of the antenna.

[0054] In a specific embodiment of the present invention, there are two second parasitic patches 10 . The length of the second parasitic patch 10 is used to adjust the in-band filtering frequency band. When the length of the second parasitic patch 10 increases, the filtering frequency band moves toward low frequencies.

[0055] In a specific embodiment of the present invention, the total length of the two second parasitic patches 10 is used to adjust the in-band filtering frequency band, which is usually half the wavelength of the microstrip line at the center frequency of the filtering frequency band.

[0056] The specific shape of the second parasitic patch 10 added in the present invention includes, but is not limited to, a rectangular shape and a T-shape. The principle of achieving notch filtering through this method is that these second parasitic patches 10 are equivalent to half-wavelength resonators at the center frequency of the corresponding filtering band. When the antenna operates within this frequency range, the current on the antenna surface will be concentrated on the parasitic patch, resulting in impedance mismatch and filtering in this frequency band.

[0057] Taking the dielectric layer using Taconic TSM-DS3, the adhesive layer using FR27-0040-43F, and the metal layer using copper as an example, the electromagnetic simulation software HFSS is used for simulation optimization. The detailed dimensions of the antenna unit are shown in Table 1 (the parameters in the table are shown in the appendix of the manual). Figure 3 and Figure 4 ).

[0058]

[0059] Figure 5 This is a reflection coefficient simulation result diagram of the antenna unit of the present invention. It can be seen that the frequency bands with reflection coefficient less than -10dB are 16.04-31.98GHz and 37.43-45.60GHz, and filtering is achieved in the 31.98-37.43GHz frequency band.

[0060] Figure 6The figure shows the influence of the first parasitic patch 9 of the antenna unit of the present invention on the antenna reflection coefficient, which intuitively reflects that the impedance matching of the antenna can be improved by the first parasitic patch 9 in the design, and this improvement is more obvious at high frequencies.

[0061] Figure 7 The figure shows the influence of the total length 2*ljs2 of the second parasitic patch 10 of the antenna unit of the present invention on the antenna reflection coefficient, which intuitively reflects the frequency band in which the filtering effect can be achieved by adjusting the length of the second parasitic patch in the design. The total length 2*ljs2 of the parasitic patch is generally half the wavelength of the microstrip line at the center frequency of the suppressed frequency band.

[0062] Figure 8 3 is a gain simulation result diagram of the antenna unit of the present invention. It can be seen that the loading of the second parasitic patch achieves a reduction in gain in the 31.98-37.43 GHz frequency band, further verifying the filtering effect of the structure.

[0063] Figure 9 (a)-(b) show the simulated radiation patterns of the antenna unit of the present invention at 24 GHz E-plane and H-plane, respectively. It can be seen from the figures that the radiation patterns have good symmetry, and the cross-polarization of the E-plane and H-plane are both less than -50 dB.

[0064] Figure 9 (c)-(d) show the simulated radiation patterns of the antenna unit of the present invention at 41.5 GHz in the E-plane and H-plane, respectively. It can be seen from the figures that the radiation patterns have good symmetry, and the cross-polarization of the E-plane and H-plane are both less than -50 dB.

[0065] This antenna incorporates parasitic patches on the sides of the radiating patch. These patches stimulate currents in the same direction as the antenna's radiating arms within the operating frequency band, further improving antenna performance. Without a resonant structure, the antenna achieves a relative bandwidth of 87.7%. Furthermore, the parasitic patches act as half-wavelength resonators at the center frequency of the interference band. When the antenna operates within the interference frequency band, currents on the antenna surface concentrate on the parasitic patches, resulting in impedance mismatch and effective filtering of the interference band. This antenna has a simple structure and is easy to fabricate, making it highly valuable for practical engineering applications.

[0066] The above description is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications, equivalent substitutions and improvements made by any technician familiar with this technical field within the technical scope disclosed by the present invention and within the spirit and principles of the present invention should be covered by the scope of protection of the present invention.

Claims

1. An ultra-wideband notch antenna for a 5G millimeter wave communication system, characterized in that: It comprises a first metal layer (1), a second metal layer (5) and a third metal layer (7); The first metal layer (1) is a radiation part, comprising a radiation patch (8) and a parasitic patch; the radiation patch (8) is a dipole structure, comprising two dipole arms symmetrical along an axis, the end of each dipole arm being bent inward on a side away from the axis of symmetry, forming an unclosed semicircular ring-like structure; the parasitic patch comprises a first parasitic patch (9) and a second parasitic patch (10); the first parasitic patch (9) is located outside the end of each dipole arm, and is used to excite a current in the same direction as the dipole arm within the working frequency band; the second parasitic patch (10) is located between the ends of each dipole arm, and is used to achieve filtering of a certain frequency band of the working frequency band; The second metal layer (5) is a metal ground and is electrically connected to the radiation patch (8); The third metal layer (7) is a feeding part, and feeds power to the radiation patch (8) through an H-shaped coupling gap (11) etched on the second metal layer (5).

2. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 1, wherein: The antenna further comprises a first dielectric layer (3), an adhesive layer (4) and a second dielectric layer (6); The first metal layer (1) is located on the upper surface of the first dielectric layer (3), and the second metal layer (5) and the third metal layer (7) are located on the upper surface and the lower surface of the second dielectric layer (6), respectively; and the adhesive layer (4) is used for bonding the first dielectric layer (3) and the second dielectric layer (6).

3. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 2, wherein: Three metal holes (2) are provided on the unbent portion of each dipole arm, and the metal holes (2) penetrate the first dielectric layer (3) and the adhesive layer (4) and are connected to the second metal layer (5).

4. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 2, wherein: The second metal layer (5) covers the entire upper surface of the second dielectric layer (6), and an H-shaped coupling slot (11) symmetrical about its center is etched thereon, and the H-shaped coupling slot (11) consists of a main slot and two slot branches, the main slot is opposite to the projection of the symmetry axis of the two dipole arms, the two slot branches are vertically connected to the main slot near the end, and the width of the main slot is greater than the width of the slot branches.

5. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 4, characterized in that: The slot branch is opposite to the projections of the bending parts of the two dipole arms.

6. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 4, characterized in that: The third metal layer (7) is a microstrip feeder designed based on a T-junction power divider, and its two feeder branch projections are located between the connection between the second metal layer (5) and the radiation patch (8) and the slot branch, and are parallel to the slot branch, with the ends being T-shaped structures.

7. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 1, wherein: The dipole arms are designed to be of equal width, with rounded corners at the bends, and the distances between the two ends of a dipole arm and the second parasitic patch (10) therebetween are equal.

8. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to any one of claims 1 to 7, characterized in that: There are four first parasitic patches (9) in total, which excite current in the same direction as the dipole arm in the band.

9. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to any one of claims 1 to 7, characterized in that: There are two second parasitic patches (10) in total. The length of the second parasitic patches (10) is used to regulate the in-band filtering frequency band. When the length of the second parasitic patches (10) increases, the filtering frequency band moves toward low frequency.

10. The ultra-wideband notch antenna for a 5G millimeter wave communication system according to claim 9, characterized in that: The total length of the two second parasitic patches (10) is half the wavelength of the microstrip line at the center frequency point of the filtering frequency band.

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