Method for solving topcon battery appearance watermarks

Abstract

The invention discloses a method for solving topcon battery appearance water marks, which comprises the following steps: putting a silicon wafer into a furnace tube, heating to 420 DEG C, and closing the tube for leakage detection; after the temperature is stabilized to 420 DEG C, nitrogen of 10000 sccm is introduced for furnace tube purging; after the temperature is raised to 420 DEG C, continuously raising the temperature to 450 DEG C, and carrying out secondary temperature raising; after nitrogen purging is completed, tunneling preparation is carried out by using the radio frequency power of 13000W, and the temperature is kept at 450 DEG C; after the deposition of the first tunneling layer is completed, preparing a poly layer by using 8000w radio frequency power, and keeping the temperature at 450 DEG C; temperature monitoring and control systems are arranged in the first step to the fifth step. According to the method for solving the topcon battery appearance watermarks, in the poly process, the temperature is increased to 450 DEG C from 420 DEG C, and the furnace tube temperature control system range control and high-temperature time control are adopted, so that the appearance watermarks are successfully improved, the appearance quality and the yield of products are improved, and powerful support is provided for efficient production of photovoltaic cells.

Description

Technical Field

[0001] The invention relates to the field of photovoltaic cell manufacturing, and in particular to a method for solving water mark on the appearance of a topcon cell. Background Art

[0002] The method to solve the water mark on the appearance of topcon batteries is a method to improve the water mark problem on the appearance by adjusting the temperature in the poly process of photovoltaic batteries. In the production process of photovoltaic cells, the poly process has a vital impact on the performance and appearance of the battery. With the continuous development of science and technology, people have higher and higher requirements for the method to solve the water mark on the appearance of topcon batteries.

[0003] The existing method for solving the watermark on the appearance of topcon batteries has certain disadvantages when used. The traditional poly process is carried out at a temperature of 420 degrees, but it is found in actual production that watermarks are prone to appear on the surface of photovoltaic cells produced under such temperature conditions. These watermarks not only affect the appearance quality of photovoltaic cells, but may also have a potential impact on the photoelectric conversion efficiency of the battery to a certain extent, reducing the product yield and market competitiveness. For this reason, we propose a method for solving the watermark on the appearance of topcon batteries. Summary of the invention

[0004] Technical problem solved: In view of the shortcomings of the prior art, the present invention provides a method for solving the water mark on the appearance of topcon batteries. In the poly process, the temperature is increased from 420 degrees to 450 degrees, and the range control and high temperature time control of the furnace tube temperature control system are adopted to successfully improve the water mark problem on the appearance, improve the appearance quality and yield rate of the product, provide strong support for the efficient production of photovoltaic cells, and can effectively solve the problems in the background technology.

[0005] Technical solution: To achieve the above purpose, the technical solution adopted by the present invention is: a method for solving the water mark on the appearance of topcon batteries, comprising the following steps: S1: Put the silicon wafer into the furnace tube, heat it to 420℃, and close the tube for leak detection; S2: After the temperature stabilizes to 420°C, 10000 sccm of nitrogen is introduced to purge the furnace tube; S3: After the temperature reaches 420 degrees, continue to heat up to 450 degrees for a second heating; S4: After the nitrogen purge is completed, use 13000W RF power to perform tunneling preparation and maintain the temperature at 450 degrees; S5: After the first tunneling layer is deposited, use 8000w RF power to prepare the poly layer and maintain 450 degrees; S6: In the first to fifth steps, a temperature monitoring and control system is set to monitor and control the temperature in real time; S7: After the film layer is deposited, 40,000 sccm of nitrogen is passed for back pressure and purge. After the back pressure and purge are completed, the film is taken out of the tube.

[0006] As a preferred technical solution of the present application, the watermark problem is solved in the steps S1-S7 by increasing the temperature of the poly process from 420 degrees to 450 degrees.

[0007] As a preferred technical solution of the present application, in the steps S1-S7, the heating system of the production equipment is firstly accurately calibrated to ensure that the temperature can be stably maintained at 450 degrees.

[0008] As a preferred technical solution of the present application, in the steps S1-S7, the reaction environment in the poly process is strictly monitored, including gas flow and pressure parameters.

[0009] As a preferred technical solution of the present application, the process parameters are adjusted in the steps S1-S7 to ensure the growth quality of the poly layer under the new temperature conditions.

[0010] As a preferred technical solution of the present application, the ratio of gas flow is adjusted in the process parameters to adapt to the change in reaction speed after the temperature rises, so as to prevent the problems of aggravated side reactions and uneven growth of the poly layer caused by the temperature rise.

[0011] As a preferred technical solution of the present application, the temperature monitoring and control system includes a temperature sensor, a gas flow sensor, a pressure sensor, a data transmitter, a central processing unit, a display and a controller. The temperature sensor, gas flow sensor and pressure sensor are all connected to the data transmitter, the data transmitter is connected to the central processing unit, and the central processing unit is connected to the display and the controller.

[0012] As a preferred technical solution of the present application, the output ends of the temperature sensor, gas flow sensor and pressure sensor are electrically connected to the input end of the data transmitter, the output end of the data transmitter is electrically connected to the input end of the central processing unit, and the output end of the central processing unit is electrically connected to the input end of the display and controller.

[0013] Beneficial effects: Compared with the prior art, the present invention provides a method for solving the watermark on the appearance of topcon batteries, which has the following beneficial effects: In the method for solving the watermark on the appearance of topcon batteries, in the poly process, the temperature is increased from 420 degrees to 450 degrees, and the range control and high temperature time control of the furnace tube temperature control system are adopted to successfully improve the watermark problem on the appearance, improve the appearance quality and yield rate of the product, and provide strong support for the efficient production of photovoltaic cells. The silicon wafer is brought into the furnace tube, the temperature is raised to 420°C, and the tube is closed for leak detection; after the temperature is stabilized to 420°C, 10000sccm of nitrogen is introduced to purge the furnace tube; after the temperature is raised to 4 After 20 degrees, continue to heat up to 450 degrees for a second temperature increase; after the nitrogen purge is completed, use 13000W RF power to prepare the tunneling layer and maintain the temperature at 450 degrees; after the first tunneling layer is deposited, use 8000w RF power to prepare the poly layer and maintain it at 450 degrees; in the first to fifth steps, a temperature monitoring and control system are set to monitor and control the temperature in real time; after the film layer is deposited, 40000sccm of nitrogen is passed for back pressure and purge. After the back pressure and purge are completed, the film is taken out of the tube. The whole method for solving the water mark on the appearance of topcon batteries is simple in structure, easy to operate, and has better effect than traditional methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The present invention is a schematic diagram of the overall process of a method for solving the water mark on the appearance of a topcon battery. DETAILED DESCRIPTION

[0015] The technical scheme of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and specific embodiments, but it will be understood by those skilled in the art that the following described embodiments are part of embodiments of the present invention, rather than all embodiments, and are only used to illustrate the present invention, and should not be considered as limiting the scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of protection of the present invention. If specific conditions are not specified in the embodiments, they are carried out according to normal conditions or conditions recommended by the manufacturer. If the manufacturer is not specified in the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0016] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0017] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0018] like Figure 1 As shown, a method for solving the water mark on the appearance of topcon batteries includes the following steps: S1: Put the silicon wafer into the furnace tube, heat it to 420℃, and close the tube for leak detection; S2: After the temperature stabilizes to 420°C, 10000 sccm of nitrogen is introduced to purge the furnace tube; S3: After the temperature reaches 420 degrees, continue to heat up to 450 degrees for a second heating; S4: After the nitrogen purge is completed, use 13000W RF power to perform tunneling preparation and maintain the temperature at 450 degrees; S5: After the first tunneling layer is deposited, use 8000w RF power to prepare the poly layer and maintain 450 degrees; S6: In the first to fifth steps, a temperature monitoring and control system is set to monitor and control the temperature in real time; S7: After the film layer is deposited, 40,000 sccm of nitrogen is passed for back pressure and purge. After the back pressure and purge are completed, the film is taken out of the tube.

[0019] In the poly process, the temperature was raised from 420 degrees to 450 degrees, and the furnace tube temperature control system extreme difference control and high temperature time control were used to successfully improve the appearance water mark problem, improve the product's appearance quality and yield rate, and provide strong support for the efficient production of photovoltaic cells.

[0020] Furthermore, in steps S1-S7, the watermark problem is solved by increasing the temperature of the poly process from 420 degrees to 450 degrees.

[0021] Furthermore, in steps S1-S7, the heating system of the production equipment is first accurately calibrated to ensure that the temperature can be stably maintained at 450 degrees.

[0022] Furthermore, in steps S1-S7, the reaction environment in the poly process is strictly monitored, including gas flow and pressure parameters.

[0023] Furthermore, the process parameters are adjusted in steps S1-S7 to ensure the growth quality of the poly layer under the new temperature conditions.

[0024] Furthermore, in the process parameters, the ratio of gas flow is adjusted to adapt to the change in reaction speed after the temperature rises, so as to prevent the problems of aggravated side reactions and uneven growth of the poly layer caused by the temperature rise.

[0025] Furthermore, the temperature monitoring and control system includes a temperature sensor, a gas flow sensor, a pressure sensor, a data transmitter, a central processing unit, a display and a controller. The temperature sensor, the gas flow sensor and the pressure sensor are all connected to the data transmitter, the data transmitter is connected to the central processing unit, and the central processing unit is connected to the display and the controller.

[0026] Furthermore, the output ends of the temperature sensor, gas flow sensor and pressure sensor are electrically connected to the input end of the data transmitter, the output end of the data transmitter is electrically connected to the input end of the central processing unit, and the output end of the central processing unit is electrically connected to the input end of the display and controller.

[0027] By increasing the temperature of the poly process from 420 degrees to 450 degrees, the watermark problem was effectively solved.

[0028] In the specific implementation process, the heating system of the production equipment is first accurately calibrated to ensure that the temperature can be stably maintained at 450 degrees. At the same time, the reaction environment in the poly process is strictly monitored, including parameters such as gas flow and pressure. Because the temperature increase may affect the reaction kinetics, the process parameters need to be adjusted accordingly to ensure the growth quality of the poly layer under the new temperature conditions. For example, the ratio of gas flow is adjusted to adapt to the change in reaction speed after the temperature rises, to prevent problems such as aggravated side reactions or uneven growth of the poly layer caused by the temperature increase.

[0029] 1. Bring silicon wafers into the furnace tube, heat it to 420℃, and close the tube to detect leaks.

[0030] 2. After the temperature stabilizes at 420°C, introduce 10,000 sccm of nitrogen to purge the furnace tube.

[0031] 3. After the temperature reaches 420 degrees, continue to heat it up to 450 degrees for a second heating.

[0032] 4. After the nitrogen purge is completed, use 13000W RF power to perform tunneling preparation and maintain the temperature at 450 degrees.

[0033] 5. After the first tunneling layer is deposited, use 8000w RF power to prepare the poly layer and maintain 450 degrees.

[0034] 6. After the film layer is deposited, 40,000 sccm of nitrogen is passed for back pressure and purge.

[0035] 7. After the back pressure purge is completed, remove the film from the tube.

[0036] It should be noted that, in this article, relational terms such as first and second (number one, number two), etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0037] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A method for solving the watermark on the appearance of topcon batteries, characterized by: The steps include: S1: Put the silicon wafer into the furnace tube, heat it to 420℃, and close the tube for leak detection; S2: After the temperature stabilizes to 420°C, 10000 sccm of nitrogen is introduced to purge the furnace tube; S3: After the temperature reaches 420 degrees, continue to heat up to 450 degrees for a second heating; S4: After the nitrogen purge is completed, use 13000W RF power to perform tunneling preparation and maintain the temperature at 450 degrees; S5: After the first tunneling layer is deposited, use 8000w RF power to prepare the poly layer and maintain 450 degrees; S6: In the first to fifth steps, a temperature monitoring and control system is set to monitor and control the temperature in real time; S7: After the film layer is deposited, 40,000 sccm of nitrogen is passed for back pressure and purge. After the back pressure and purge are completed, the film is taken out of the tube.

2. A method for solving the watermark problem on the appearance of topcon batteries according to claim 1, characterized in that: In the steps S1-S7, the watermark problem is solved by increasing the temperature of the poly process from 420 degrees to 450 degrees.

3. The method for solving the watermark problem on the appearance of topcon batteries according to claim 1, characterized in that: In the steps S1-S7, the heating system of the production equipment is firstly accurately calibrated to ensure that the temperature can be stably maintained at 450 degrees.

4. The method for solving the watermark problem on the appearance of topcon batteries according to claim 1, characterized in that: In the steps S1-S7, the reaction environment in the poly process is strictly monitored, including gas flow and pressure parameters.

5. The method for solving the watermark problem on the appearance of topcon batteries according to claim 1, characterized in that: In the steps S1-S7, the process parameters are adjusted to ensure the growth quality of the poly layer under the new temperature conditions.

6. A method for solving the watermark problem on the appearance of topcon batteries according to claim 5, characterized in that: In the process parameters, the ratio of gas flow is adjusted to adapt to the change in reaction rate after the temperature rises, so as to prevent the intensification of side reactions and uneven growth of the poly layer caused by the temperature rise.

7. The method for solving the watermark problem on the appearance of topcon batteries according to claim 1, characterized in that: The temperature monitoring and control system includes a temperature sensor, a gas flow sensor, a pressure sensor, a data transmitter, a central processing unit, a display and a controller. The temperature sensor, the gas flow sensor and the pressure sensor are all connected to the data transmitter, the data transmitter is connected to the central processing unit, and the central processing unit is connected to the display and the controller.

8. The method for solving the watermark problem on the appearance of topcon batteries according to claim 7, characterized in that: The output ends of the temperature sensor, gas flow sensor and pressure sensor are electrically connected to the input end of the data transmitter, the output end of the data transmitter is electrically connected to the input end of the central processing unit, and the output end of the central processing unit is electrically connected to the input end of the display and controller.

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