Nonvolatile tunable ferroelectric three-terminal light emitting diode and preparation method thereof

Abstract

The invention discloses a nonvolatile tunable ferroelectric three-terminal light emitting diode and a preparation method thereof, the device comprises an n-type layer, a light emitting layer and a p-type layer which are arranged in sequence, and a ferroelectric layer and a ferroelectric control terminal electrode are arranged on the n-type layer or the p-type layer. Therefore, the non-volatile tuning of the light-emitting wavelength is realized. The response time of ferroelectric polarization flipping is in the nanosecond order, the ferroelectric three-section light emitting diode is allowed to achieve efficient write-in and read operation, and through dynamic wavelength tuning, the ferroelectric three-section light emitting diode can be used for efficient optical communication, and the bandwidth and the spectrum utilization rate are improved. Meanwhile, through the nonvolatile storage function of the ferroelectric capacitor, information can be stored in the ferroelectric capacitor, light waves with different wavelengths are excited to be output, the optical logic unit can serve as a programmable logic unit in photon calculation, different calculation states are coded through different wavelengths, and optical logic operation is achieved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor devices, and particularly relates to a non-volatile tunable ferroelectric three-terminal diode (FTTD) and a preparation method thereof. Background Art

[0002] Traditional two-terminal light-emitting diodes (LEDs) are widely used in solid-state lighting, optical communications, and sensors due to their simple structure and mature process. In particular, the fast amplitude modulation characteristics of LED-based optical transmitters make them very suitable for optical wireless communication (OWC) technology, and have broad application prospects in light fidelity (LiFi), non-line-of-sight communication, and optical interconnection applications. However, with the growing demand for high-performance, multifunctional optoelectronic devices, the limitations of traditional LEDs are gradually emerging: 1. Traditional two-terminal LEDs only have the function of emitting light, and cannot flexibly adjust the luminous intensity or realize dynamic storage and control, which limits their application potential in multifunctional optoelectronic devices; 2. External bias circuits (such as T-type bias circuits) are required to realize the modulation function, which increases power consumption and system complexity; 3. The modulation frequency of traditional LEDs is limited by the carrier recombination time, which can usually only reach tens of MHz, which is difficult to meet the needs of modern high-speed optical communications. Summary of the invention

[0003] In order to overcome the shortcomings of the above-mentioned prior art, the purpose of the present invention is to provide a non-volatile tunable ferroelectric three-terminal light emitting diode and a preparation method thereof, aiming to solve the problems of insufficient functionality, performance and energy efficiency of traditional two-terminal light emitting diodes, especially to meet the needs of high-speed optical communication and real-time control.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is:

[0005] A non-volatile tunable ferroelectric three-terminal light emitting diode comprises an n-type layer, a light emitting layer and a p-type layer arranged in sequence, a ferroelectric layer and a ferroelectric control terminal electrode are arranged in the n-type layer or the p-type layer, and the control of the light emitting characteristics and non-volatile tuning are achieved through the bias of the ferroelectric control terminal electrode;

[0006] The bias is a negative write voltage that causes the ferroelectric domains in the ferroelectric layer to flip downward or a positive write voltage that causes the ferroelectric domains in the ferroelectric layer to flip upward.

[0007] The device of the present invention integrates a double-terminal pn light-emitting diode and a ferroelectric capacitor monolithically by directly depositing a metal / ferroelectric layer on the p-type layer. When working in the emitter mode, the bias applied to the ferroelectric control terminal will tune the energy band of the p-type layer and affect the electron and hole energy levels of the light-emitting layer, thereby causing the modulation of the light intensity.

[0008] In one embodiment, the material of the light emitting diode is AlGaN, the n-type layer introduces electron carriers by doping Si elements into AlGaN, and the p-type layer introduces holes by doping Mg elements into AlGaN and GaN; or,

[0009] The material of the light emitting diode is AlGaInP, the n-type layer is introduced with electron carriers by doping Se or Si elements in AlGaInP, and the p-type layer is introduced with holes by doping Zn or Mg elements in AlGaInP; or

[0010] The material of the light emitting diode is AlGaAs / GaAs, the n-type layer introduces electron carriers by doping Si element into AlGaAs, and the p-type layer introduces holes by doping Zn element into AlGaAs; or,

[0011] The material of the light emitting diode is ZnSe, the n-type layer introduces electron carriers by doping halogen elements into ZnSe, and the p-type layer introduces holes by doping N elements into ZnSe.

[0012] In one embodiment, the n-type layer is arranged on the substrate, an n-region electrode is arranged above the exposed area of ​​the n-type layer, a p-region electrode is arranged above the p-type layer, and a ferroelectric layer and a ferroelectric control terminal electrode are stacked.

[0013] In one embodiment, the light-emitting layer adopts a periodic multi-quantum well structure in which quantum wells and quantum barrier layers are alternately stacked, and both ends of the structure are quantum barrier layers.

[0014] In one embodiment, the quantum well is AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, the quantum barrier layer is AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, and the aluminum content in the quantum barrier layer is higher than that in the quantum well layer; the thicknesses of a single quantum well layer and a single quantum barrier layer are controlled at 2-5nm and 5-10nm respectively, the number of quantum wells is 5-10, and the total thickness is between 50nm and 150nm.

[0015] In one embodiment, the ferroelectric layer is any one of HZO, HfAlO, BiFeO3, ZnSnO3, SBT, BaTiO3, Cd2Nb2O7 and AlScN.

[0016] In one embodiment, the luminescence characteristics are controlled by the ferroelectric control terminal electrode as follows:

[0017] When the three-terminal light-emitting diode works in the emitter mode, by writing a voltage on the ferroelectric control terminal electrode, the ferroelectric domain in the ferroelectric layer is flipped, and an additional electrostatic potential difference appears on the top of the p-type layer or the n-type layer, forming an additional electric field on the light-emitting layer, causing the wavelength of the emitted light of the light-emitting layer to change, thereby achieving wavelength tuning.

[0018] In one embodiment, when the ferroelectric domains in the ferroelectric layer are in an upward flipping state, the emission wavelength is red-shifted; when the ferroelectric domains in the ferroelectric layer are in a downward flipping state, the emission wavelength is blue-shifted.

[0019] In one embodiment, information is written into the ferroelectric layer by writing voltage, and the polarization state of the ferroelectric layer is determined by measuring the wavelength of the emitted light to obtain the stored data. Different wavelengths are used to encode different computing states to implement optical logic operations.

[0020] The present invention also provides a method for preparing the non-volatile tunable ferroelectric three-terminal light-emitting diode, comprising the following steps:

[0021] 1) Growing an n-type layer or a p-type layer on the substrate surface;

[0022] 2) growing a light-emitting layer on the n-type layer or the p-type layer;

[0023] 3) growing a p-type layer or an n-type layer on the light-emitting layer;

[0024] 4) depositing a ferroelectric layer on the p-type layer or n-type layer obtained in the previous step;

[0025] 5) Growing electrodes on the n-type layer, p-type layer and ferroelectric layer.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] 1. The present invention realizes non-volatile tuning of the wavelength of the light-emitting diode by introducing a ferroelectric layer and a ferroelectric control terminal electrode into the light-emitting diode. The light-emitting and wavelength tuning functions are integrated on a single device, which reduces the system complexity and power consumption compared with the traditional wavelength modulation by adding an external circuit. The response time of the ferroelectric polarization reversal is in the nanosecond order, allowing the ferroelectric three-segment light-emitting diode to achieve efficient writing and reading operations. By dynamically tuning the wavelength, it can be used for efficient optical communication, improving bandwidth and spectrum utilization.

[0028] 2. The three-terminal light-emitting diode of the present invention can store information in a ferroelectric capacitor through the non-volatile storage function of the ferroelectric capacitor, and can be used as a programmable logic unit in photon computing by stimulating light wave outputs of different wavelengths, using different wavelengths to encode different computing states and realize optical logic operations. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1It is a schematic diagram of the structure of the ferroelectric three-terminal light-emitting diode device of the present invention.

[0030] Figure 2 It is the ferroelectric thin film hysteresis loop of the present invention.

[0031] Figure 3 It is the energy band diagram of the ferroelectric control end of the present invention.

[0032] Figure 4 It is a schematic diagram of wavelength tuning of the ferroelectric three-terminal light-emitting diode of the present invention. DETAILED DESCRIPTION

[0033] The embodiments of the present invention are described in detail below with reference to the accompanying drawings and examples.

[0034] Aiming at the energy efficiency optimization pressure of traditional LEDs and the integration requirements of optoelectronic systems, the present invention proposes a non-volatile tunable ferroelectric three-terminal diode (FTTD) suitable for high-speed optical communication and real-time control and a preparation method thereof. The diode introduces a ferroelectric capacitor control terminal on the LED, combines the non-volatile storage and dynamic regulation characteristics of the ferroelectric capacitor, and realizes the unification of light-emitting, storage and tuning functions. By changing the polarization state of the ferroelectric capacitor, the FTTD can dynamically switch between different functional modes (such as light-emitting, detection or logical operation), meet diversified requirements, and provide a new direction for the integration of optoelectronic systems.

[0035] like Figure 1 As shown, the present invention is a non-volatile tunable ferroelectric three-terminal light emitting diode, comprising an n-type layer 2, a light emitting layer 3 and a p-type layer 4 arranged in sequence, wherein the n-type layer 2, the light emitting layer 3 and the p-type layer 4 constitute the main structure of a conventional LED. The present invention adds a ferroelectric capacitor control terminal, namely a ferroelectric layer 7 and a ferroelectric control terminal electrode 6 connected thereto, and the ferroelectric layer 7 can be arranged on the n-type layer 2 or the p-type layer 4. Based on the characteristics of the ferroelectric material, the ferroelectric control terminal electrode 6, the ferroelectric layer 7 and the n-type layer 2 or the p-type layer 4 semiconductor form a ferroelectric capacitor (similar to the Metal-Oxide-Semiconductor metal-oxide layer-semiconductor capacitor in MOSFET).

[0036] The present invention increases the ferroelectric capacitor control terminal, utilizes the polarization reversibility and non-volatility of the ferroelectric material, and realizes precise control and non-volatile tuning of the luminescence characteristics through the bias of the ferroelectric control terminal electrode 6. Specifically, when the FTTD works in the emitter mode, by writing a voltage on the ferroelectric control terminal electrode 6, when the ferroelectric domain in the ferroelectric layer 7 is flipped, an additional electrostatic potential difference appears at the top of the p-type layer 4 or the n-type layer 2, forming an additional electric field to the luminescent layer 3, so that the wavelength of the emitted light of the luminescent layer 3 changes, thereby realizing wavelength tuning. Compared with the existing structure, this design has lower power consumption, higher response speed and better thermal stability, providing technical support for the next generation of high-efficiency optoelectronic systems.

[0037] exist Figure 1 In the structure shown, the ferroelectric layer 7 is arranged on the p-type layer 4, the n-type layer 2 is arranged on the substrate 1, the n-region electrode 8 is arranged above the exposed area of ​​the n-type layer 2, the p-region electrode 5 is arranged above the p-type layer 4, and the ferroelectric control terminal electrode 6 is stacked on the ferroelectric layer 7. The following description is based on this structure, that is, the substrate 1 is n-type doped. However, when the p-type layer 4 is arranged on the substrate 1 and the ferroelectric layer 7 is arranged on the n-type layer 2, those skilled in the art should be able to know that there are similar principles and application methods. At this time, the substrate 1 should also be replaced with p-type doping.

[0038] There are many options for the LED material of the present invention. The embodiments list several common light emitting diode materials, as shown in the following table:

[0039] Material n-type layer—n-type doping element p-type layer—p-type doping element Substrate AlGaN AlGaN—Si AlGaN and GaN-Mg Sapphire, SiC or Si AlGaInP AlGaInP—Se or Si AlGaInP—Zn or Mg GaAs or Ge AlGaAs / GaAs AlGaAs—Si AlGaAs—Zn Si-doped n-type GaAs ZnSe ZnSe—Halogen Elements ZnSe—N GaAs, InP or ZnSe

[0040] By doping Si elements in AlGaN, Se / Si elements in AlGaInP, Si elements in AlGaAs / GaAs, or halogen elements in ZnSe, electron carriers are introduced to form an n-type layer 2. By doping Mg elements in AlGaN and GaN, Zn or Mg elements in AlGaInP, Zn elements in AlGaAs, or N elements in ZnSe, holes are introduced to form a p-type layer 4. The corresponding substrate 1 is shown in the table above. When the p-type layer 4 uses AlGaN and GaN, GaN is above AlGaN, and the band gap of AlGaN is wider than that of GaN (with the increase of aluminum content, the band gap increases), forming an energy barrier in the pn junction, blocking the electrons injected from the n-type layer 2 from entering the p-type layer 4, and improving the luminous efficiency. GaN has higher conductivity and lower Schottky barrier, which reduces the resistance of the p-type layer 4 and the contact resistance of the electrode-semiconductor, and improves the efficiency of the device.

[0041] Above the n-type layer 2 is the light emitting layer 3, above the light emitting layer is the p-type layer 4, above the p-type layer 4 is the p-region electrode 5 and the stack of the ferroelectric layer 7 and the ferroelectric control terminal electrode 6. Above the exposed drain region of the n-type layer 2 is the n-region electrode 8.

[0042] The light-emitting layer 3 of the present invention uses a multi-quantum well (MQWs) structure, which is a periodic structure in which quantum wells and quantum barrier layers are alternately stacked, and both ends of the structure are quantum barrier layers. For example, the quantum well is AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, and correspondingly, the quantum barrier layer is also AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, that is, the material of the quantum barrier layer is preferably the same as that of the quantum well, but the aluminum content in the quantum barrier layer is higher than that in the quantum well layer.

[0043] The ferroelectric layer 7 of the present invention can be any ferroelectric material selected from the group consisting of HZO, HfAlO, BiFeO3, ZnSnO3, SBT, BaTiO3, Cd2Nb2O7 and AlScN. Figure 2 and Figure 3 The hysteresis loop of the ferroelectric material and the energy band diagram of the ferroelectric control end are shown. The change of the ferroelectric polarization state will form an additional electrostatic potential difference or space charge distribution near the surface of the p-type layer 4, so that the bending of the energy band of the p-type layer 4 changes. In the present invention, bias refers to a negative write voltage that causes the ferroelectric domain in the ferroelectric layer 7 to flip downward or a positive write voltage that causes the ferroelectric domain in the ferroelectric layer 7 to flip upward. Among them, when the bias is a negative write voltage, the negative charge at the metal / ferroelectric layer interface increases, and the positive charge at the ferroelectric layer / semiconductor heterojunction accumulates, causing the energy band on the surface of the p-type layer 4 to bend upward. When the bias is a positive write voltage, positive charges accumulate at the metal / ferroelectric layer interface, and negative charges accumulate at the ferroelectric layer / semiconductor heterojunction, causing the energy band on the surface of the p-type layer 4 to bend downward. Since the ferroelectric material is non-volatile, that is, when the external bias is removed, the ferroelectric domain still maintains the direction of polarization unchanged, the tuning effect of the ferroelectric control end on the light-emitting diode is non-volatile.

[0044] The FTTD of the present invention has the following mechanism for tuning the emission wavelength based on the ferroelectric control end: when the voltage is written to flip the ferroelectric domain of the ferroelectric layer 7, an additional electrostatic potential difference appears at the top of the p-type layer 4, and the energy band near the surface is bent, which eventually changes the Fermi level position and barrier distribution of the p-region, and changes the potential energy difference between the quantum well, forming an additional electric field for the multi-quantum well region. Due to the quantum confined Stark effect (QCSE), when the multi-quantum well is subjected to an external or built-in electric field, the energy band of the quantum well will tilt, the spatial overlap of electrons and holes will change, the recombination energy will change, and the wavelength of the emitted light will also change, thereby achieving wavelength tuning.

[0045] The FTTD of the present invention has storage and light-emitting functions. When in working state, the electric domain of the ferroelectric layer 7 will tune the wavelength. The specific light-emitting color is determined by the light-emitting diode material. The two polarization states of the ferroelectric material will blue-shift and red-shift the light-emitting wavelength respectively.

[0046] Furthermore, when the ferroelectric domains of the ferroelectric layer 7 are in an upward flipping state, an additional electric field is formed on the surface of the p-type layer 4, causing the energy band of the p-type layer 4 to bend downward, thereby enhancing the net electric field in the quantum well region, and making the wave function separation of electrons and holes more serious, thereby reducing the recombination energy of electrons and holes (the equivalent band gap becomes smaller), resulting in a red shift in the luminescence wavelength. On the contrary, when the ferroelectric domains of the ferroelectric layer 7 are in a downward flipping state, the energy band of the p-type layer 4 bends upward, the wave function separation of electrons and holes in the multi-quantum well region is reduced, the spatial overlap is enhanced, and the recombination energy is increased, resulting in a blue shift in the luminescence wavelength.

[0047] like Figure 4 As shown, different polarization states of the ferroelectric domains will switch the output resonant wavelength of the light-emitting diode to between two different wavelengths, and due to the non-volatility of the ferroelectric dielectric layer, when the bias voltage of the ferroelectric control terminal is disconnected, the modulated emission wavelength remains unchanged. The polarization reversal of the ferroelectric capacitor occurs in the range of nanoseconds to picoseconds, making the wavelength tuning speed extremely fast and suitable for high-speed optical communications. The light-emitting diode can be used to improve the energy efficiency of optical interconnection. By adjusting the output wavelength of the laser in a non-volatile manner, the need for calibrating the laser wavelength and consuming a large amount of power for heaters and drive circuits is eliminated. Traditional optical communication circuits require additional additional circuits to tune light waves, which not only increases the circuit area and power consumption, but also greatly prolongs the time of modulating optical signals. The FTTD of the present invention can tune the wavelength of the optical signal by introducing a ferroelectric control terminal, reducing power consumption and area, and the polarization reversal of the ferroelectric layer occurs in the range of nanoseconds to picoseconds, with an extremely fast modulation speed, and can be used in efficient optical communications.

[0048] Since the polarization state of the ferroelectric layer 7 will modulate the wavelength of light emission, the information is written into the ferroelectric layer by writing voltage, and then the wavelength of light emission can be measured to determine the polarization state of the ferroelectric layer (stored data). The FTTD of the present invention directly stores data on the photonic integrated circuit, reducing the amount of data transmitted outside the chip and further saving power consumption and time. The state 0 or 1 is stored by switching the polarization state of the ferroelectric dielectric layer, and then the stored data is read by measuring the output light wavelength of the light emitting diode, thereby realizing optical storage. Furthermore, by storing information in a ferroelectric capacitor and stimulating the output of light waves of different wavelengths as a programmable logic unit in photonic computing, different wavelengths are used to encode different computing states, thereby realizing optical logic operations.

[0049] The method for preparing the non-volatile tunable ferroelectric three-terminal light emitting diode of the present invention comprises the following steps:

[0050] 1) Metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) technology is used. Group III precursors are trimethylaluminum (TMA, Al source) and trimethylgallium (TMG, Ga source). Group V precursors are ammonia (NH3). Doping source is silane (SiH4, Si source), with a doping concentration of 10 17 ~10 19 cm -3 A 3-5 μm n-type layer 2 is grown on the surface of substrate 1. The material is AlGaN. Substrate 1 can be any one of sapphire, SiC or high-resistance Si. The material of n-type layer 2 can also be replaced by materials such as AlGaAs, ZnSe or SiC. Correspondingly, substrate 1 also needs to be replaced by materials such as GaAs, Ge, InP, ZnSe or SiC.

[0051] 2) Using MOCVD or MBE technology, quantum wells (AlGaN) and quantum barrier layers (AlGaN) are grown alternately. The thickness of the quantum well layer and quantum barrier layer are controlled at 2-5nm and 5-10nm respectively. The number of quantum wells is 5-10, and the total thickness is between 50nm and 150nm. The aluminum content of the barrier layer is generally higher than that of the quantum well layer (the aluminum content is 20%-40%). The light-emitting layer 3 can also be replaced by structures such as AlGaInP multiple quantum wells, AlGaAs / GaAs multiple quantum wells and ZnSe multiple quantum wells.

[0052] 3) Using MOCVD or MBE technology, AlGaN and GaN are grown on the light-emitting layer 3 respectively, and bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the Mg source with a doping concentration of 10 17 ~10 18 cm -3 , obtained as the p-type layer 4. The AlGaN layer has an aluminum content of about 20%-30%, a thickness of 20-50nm, and a GaN thickness of 50-100nm. After doping, heat treatment (600-800℃) is required to activate magnesium atoms and release holes. The p-type layer can also be replaced by materials such as AlGaInP, AlGaAs and ZnSe

[0053] 4) A ferroelectric layer 7 is deposited on the p-type layer 4 by atomic layer deposition (ALD) technology, using TEMAHf (hafnium source) and TEMAZr (zirconium source), H2O or O3 as oxygen source, and 5-10nm of HZO, i.e., ferroelectric layer 7, is reactively deposited at a temperature of 250°C-350°C. The ferroelectric layer 7 can also use any one of HfAlO, BiFeO3, ZnSnO3, SBT, BaTiO3, Cd2Nb2O7 and AlScN.

[0054] 5) Using magnetron sputtering technology, grow 50-100nm thick electrodes on the n-type layer 2, the p-type layer 4 and the ferroelectric layer 7. The electrodes can be any one of Ti / Au, TiN and TaN. The electrodes of the n-type layer 2 and the p-type layer 4 can also be made of transparent conductive oxide materials (ITO or AZO) to ensure light transmittance.

Claims

1. A non-volatile tunable ferroelectric three-terminal light-emitting diode, comprising an n-type layer (2), a light-emitting layer (3) and a p-type layer (4) arranged in sequence, characterized in that: A ferroelectric layer (7) and a ferroelectric control terminal electrode (6) are arranged on the n-type layer (2) or the p-type layer (4), and the control of the light-emitting characteristics and non-volatile tuning are achieved through the bias of the ferroelectric control terminal electrode (6); The bias is a negative write voltage that causes the ferroelectric domain in the ferroelectric layer (7) to flip downward, or a positive write voltage that causes the ferroelectric domain in the ferroelectric layer (7) to flip upward.

2. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1, characterized in that: The material of the light emitting diode is AlGaN, the n-type layer (2) introduces electron carriers by doping Si elements into AlGaN, and the p-type layer (4) introduces holes by doping Mg elements into AlGaN and GaN; or, The material of the light emitting diode is AlGaInP, the n-type layer (2) introduces electron carriers by doping Se or Si elements into AlGaInP, and the p-type layer (4) introduces holes by doping Zn or Mg elements into AlGaInP; or, The material of the light emitting diode is AlGaAs / GaAs, the n-type layer (2) introduces electron carriers by doping Si element into AlGaAs, and the p-type layer (4) introduces holes by doping Zn element into AlGaAs; or, The material of the light emitting diode is ZnSe, the n-type layer (2) introduces electron carriers by doping halogen elements into ZnSe, and the p-type layer (4) introduces holes by doping N elements into ZnSe.

3. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1 or 2, characterized in that: The n-type layer (2) is arranged on the substrate (1), an n-region electrode (8) is arranged above the exposed area of ​​the n-type layer (2), a p-region electrode (5) is arranged above the p-type layer (4), and a ferroelectric layer (7) and a ferroelectric control terminal electrode (6) are stacked.

4. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1 or 2, characterized in that: The light-emitting layer (3) adopts a periodic multi-quantum well structure in which quantum wells and quantum barrier layers are alternately stacked, and both ends of the structure are quantum barrier layers.

5. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 4, characterized in that: The quantum well is AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, the quantum barrier layer is AlGaN, AlGaInP, AlGaAs / GaAs or ZnSe, and the aluminum content in the quantum barrier layer is higher than that in the quantum well layer; the thickness of a single quantum well layer and a single quantum barrier layer are controlled at 2-5nm and 5-10nm respectively, the number of quantum wells is 5-10, and the total thickness is between 50nm and 150nm.

6. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1, characterized in that: The ferroelectric layer (7) is any one of HZO, HfAlO, BiFeO3, ZnSnO3, SBT, BaTiO3, Cd2Nb2O7 and AlScN.

7. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1, characterized in that: The luminescence characteristics are controlled by the ferroelectric control terminal electrode (6), and the method is as follows: When the three-terminal light-emitting diode operates in the emitter mode, a voltage is written on the ferroelectric control terminal electrode (6) to flip the ferroelectric domain in the ferroelectric layer (7), and an additional electrostatic potential difference appears at the top of the p-type layer (4) or the n-type layer (2), forming an additional electric field on the light-emitting layer (3), causing the wavelength of the emitted light of the light-emitting layer (3) to change, thereby achieving wavelength tuning.

8. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 7, characterized in that: When the ferroelectric domain in the ferroelectric layer (7) is in an upward flipping state, the luminescence wavelength is red-shifted; when the ferroelectric domain in the ferroelectric layer (7) is in a downward flipping state, the luminescence wavelength is blue-shifted.

9. The nonvolatile tunable ferroelectric three-terminal light emitting diode according to claim 1, characterized in that: Information is written into the ferroelectric layer (7) by means of a write voltage, the polarization state of the ferroelectric layer (7) is determined by measuring the luminescent wavelength to obtain the stored data, and different calculation states are encoded by using different wavelengths to realize optical logic operations.

10. The method for preparing a non-volatile tunable ferroelectric three-terminal light emitting diode according to any one of claims 1 to 9, characterized in that: The steps include: 1) growing an n-type layer (2) or a p-type layer (4) on the surface of a substrate; 2) growing a light-emitting layer on the n-type layer (2) or the p-type layer (4); 3) growing a p-type layer (4) or an n-type layer (2) on the light-emitting layer; 4) depositing a ferroelectric layer (7) on the p-type layer (4) or the n-type layer (2) obtained in the previous step; 5) Growing electrodes on the n-type layer (2), the p-type layer (4) and the ferroelectric layer (7).

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