A parallel gate light emitting device and array with carrier dual-gate current control

Abstract

This invention discloses a parallel-gate light-emitting device with carrier dual-gate current regulation, relating to the field of optoelectronic displays. It includes: a substrate, a light-emitting composite layer, a first hole transport layer and a first electron transport layer disposed on both sides of the light-emitting composite layer, a thin electron transport layer located on the side of the first hole transport layer, a first control electrode, a second hole transport layer, and an anode; and a thin hole transport layer located on the side of the first electron transport layer, a second control electrode, a second electron transport layer, and a cathode. The device provided by this invention optimizes the balance of electron and hole injection under the regulation of a second bias signal and a third bias signal, making it easy to drive. Furthermore, it drives the holes in the first hole transport layer and the electrons in the first electron transport layer to recombine and emit light within the light-emitting composite layer, thereby improving luminous efficiency.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic displays, and in particular to a parallel gate light-emitting device with carrier dual-gate current modulation. Background Technology

[0002] Compared to sandwich-structured light-emitting devices, parallel-gate structured light-emitting devices have fewer layers covering the light-emitting side of the light-emitting layer, resulting in higher light transmittance and effectively reducing transmission loss. However, because the light-emitting layer of a parallel-gate structure needs to be driven from both sides, the driving of electrons and holes is relatively difficult, requiring a relatively higher driving voltage. Furthermore, due to process conditions and material properties, there are inherent and difficult-to-eliminate differences in the mobility of electrons and holes, often leading to severe charge carrier imbalance. In summary, due to these two factors, parallel-gate charge carrier recombination is difficult to achieve ideal efficiency, thus severely negatively impacting the overall light-emitting performance of the device. Summary of the Invention

[0003] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a parallel gate light-emitting device with carrier dual-gate current regulation. It aims to solve the problems of high driving voltage and charge carrier imbalance in the light-emitting recombination layer of the prior art parallel gate structure light-emitting devices. By designing carrier dual-gate current regulation, the migration amount of carriers on both sides can be effectively regulated. On the one hand, it reduces the driving difficulty and driving voltage. On the other hand, the dual-gate current regulation is used to regulate the injection amount of electrons and holes, balance the carrier injection and improve the light-emitting recombination efficiency.

[0004] To achieve the above objectives, the present invention provides a parallel-gate light-emitting device with carrier dual-gate current modulation, the device comprising:

[0005] Substrate;

[0006] A light-emitting composite layer disposed on the substrate;

[0007] A first hole transport layer and a first electron transport layer are respectively disposed on the substrate and located on both sides of the light-emitting composite layer;

[0008] A thin electron transport layer covering the first hole transport layer;

[0009] A first control electrode is disposed on the substrate and electrically connected to the side of the thin electron transport layer;

[0010] A second hole transport layer is disposed on the thin electron transport layer;

[0011] Anode disposed on the second hole transport layer;

[0012] A thin hole transport layer covering the first electron transport layer;

[0013] A second control electrode is disposed on the substrate and electrically connected to the side of the thin hole transport layer;

[0014] A second electron transport layer is disposed on the thin hole transport layer;

[0015] A cathode disposed on the second electron transport layer;

[0016] A first driving signal is connected between the anode and the cathode, a second bias signal is connected between the anode and the first control electrode, and a third bias signal is connected between the second control electrode and the cathode. The second bias signal is used to conduct the second hole transport layer and the thin electron transport layer and to control the amount of holes injected from the anode into the first hole transport layer through the second hole transport layer and the thin electron transport layer. The third bias signal is used to conduct the second electron transport layer and the thin hole transport layer and to control the amount of electrons injected from the cathode into the first electron transport layer through the second electron transport layer and the thin hole transport layer. The first driving signal is used to optimize the balance of electron and hole injection amounts and facilitate driving under the control of the second bias signal and the third bias signal, thereby driving the holes in the first hole transport layer and the electrons in the first electron transport layer to recombine and emit light in the light-emitting composite layer and improve the luminous efficiency.

[0017] Based on the device provided by this technical solution, when the first driving signal and the second driving signal are applied, the second hole transport layer and the thin electron transport layer are turned on. Hole carriers are injected from the anode into the first hole transport layer, and electron carriers are injected from the cathode into the first electron transport layer, increasing the injection amount of electrons and holes. They then recombine and emit light in the light-emitting recombination layer, reducing the device driving voltage. Furthermore, the injection amounts of electrons and holes can be changed and balanced under the regulation of the first driving signal and the second driving signal, avoiding excessively high mobility of a single type of carrier or low mobility, and improving the light-emitting recombination efficiency.

[0018] In one specific embodiment, the thin electron transport layer, the second hole transport layer, and the anode are arranged at a first inclination, and the thin hole transport layer, the second electron transport layer, and the cathode are arranged at a second inclination. The first inclination and the second inclination are arranged in an open shape so that the light emitted by the light-emitting composite layer is emitted towards the light-emitting port side.

[0019] In this technical solution, the opening design increases the light emission opening angle of the light-emitting device, thereby improving the display viewing angle.

[0020] In one specific embodiment, the first driving signal is connected to the anode at an anode potential higher than the cathode potential connected to the cathode; the second bias signal is configured to apply a first positive voltage to the anode relative to the first control electrode; and the third bias signal is configured to apply a second positive voltage to the first control electrode relative to the cathode.

[0021] Based on this technical solution, the device can control the gate conduction and further inject electrons and holes into the light-emitting composite layer.

[0022] In one specific embodiment, the first positive phase voltage is greater than the conduction threshold voltage of the second hole transport and the thin electron transport layer, and the magnitude of the first positive phase voltage is adjusted according to the hole injection amount required by the composite light-emitting layer.

[0023] Based on this technical solution, the amount of hole injection can be controlled.

[0024] In one specific embodiment, the second positive phase voltage is greater than the conduction threshold voltage of the thin hole transport layer and the second electron transport layer, and the magnitude of the second positive phase voltage is adjusted according to the amount of electron injection required by the composite light-emitting layer.

[0025] Based on this technical solution, the amount of electron injection can be controlled.

[0026] In one specific embodiment, a first current-limiting resistor is connected in series in the circuit loop of the second bias signal, and a second current-limiting resistor is connected in series in the circuit loop of the third bias signal.

[0027] This technical solution can limit the circuit loop current and prevent excessive inter-electrode current from burning out the device.

[0028] In one specific embodiment, the second bias signal and the third bias signal are current-type drive signals or voltage-type drive signals; the voltage-type drive signal includes an adjustable DC power supply, an energy storage capacitor, or high and low potential nodes.

[0029] In one specific embodiment, the light-emitting composite layer is an LED light-emitting material, an OLED light-emitting material, or a QLED light-emitting material.

[0030] In one specific embodiment, the device further includes a first light-blocking isolation post and a second light-blocking isolation post; the first light-blocking isolation post is disposed on the side of the first control electrode, and the second light-blocking isolation post is disposed on the side of the second control electrode.

[0031] In this technical solution, considering the array of light-emitting devices, occlusion between different pixels is achieved, thereby reducing crosstalk between pixels.

[0032] In a second aspect of the invention, a carrier-controlled dual-gate current-modulated parallel gate light-emitting array is provided, the array comprising parallel gate light-emitting devices as provided in any one of the first aspects of the invention arranged in an array.

[0033] The beneficial effects of this invention are as follows: 1) In this invention, the first driving signal and the second driving signal are activated, turning on the second hole transport layer and the thin electron transport layer. Hole carriers are injected from the anode into the first hole transport layer, and electron carriers are injected from the cathode into the first electron transport layer, increasing the injection amount of electrons and holes. This results in recombination and light emission within the light-emitting recombination layer, reducing the device driving voltage. Furthermore, the injection amounts of both electrons and holes can be changed and balanced under the regulation of the first and second driving signals, avoiding excessively high or low mobility of any single type of carrier and improving the light-emitting recombination efficiency. 2) This invention, through its opening design, increases the light-emitting opening angle of the light-emitting device, thereby improving the display viewing angle. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of a parallel gate light-emitting device with carrier dual-gate current modulation according to a specific embodiment of the present invention.

[0035] Figure 2 This is a schematic diagram of the light emission of a parallel gate light-emitting device with carrier dual-gate current regulation according to a specific embodiment of the present invention. Detailed Implementation

[0036] The embodiments of this patent are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this patent, and should not be construed as limiting this patent.

[0037] In the description of this patent, it should be understood that the terms “center,” “upper,” “lower,” “front,” “back,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this patent and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this patent.

[0038] In the description of this patent, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "setting" should be interpreted broadly. For example, they can refer to a fixed connection or setting, a detachable connection or setting, or an integral connection or setting. Those skilled in the art can understand the specific meaning of the above terms in this patent according to the specific circumstances.

[0039] like Figure 1 As shown, this embodiment of the invention provides a parallel-gate light-emitting device with carrier dual-gate current modulation, the device comprising:

[0040] Substrate 101;

[0041] A light-emitting composite layer 102 is disposed on the substrate 101;

[0042] A first hole transport layer 103 and a first electron transport layer 104 are respectively disposed on the substrate 101 and located on both sides of the light-emitting composite layer 102;

[0043] A thin electron transport layer 105 covering the first hole transport layer 103;

[0044] A first control electrode 106 is disposed on the substrate 101 and electrically connected to the side of the thin electron transport layer 105;

[0045] A second hole transport layer 107 is disposed on the thin electron transport layer 105;

[0046] Anode 108 disposed on the second hole transport layer 107;

[0047] A thin hole transport layer 109 is coated on the first electron transport layer 104;

[0048] The second control electrode 110 is disposed on the substrate 101 and electrically connected to the side of the thin hole transport layer 109;

[0049] A second electron transport layer 111 is disposed on the thin hole transport layer 109;

[0050] Cathode 112 disposed on the second electron transport layer 111;

[0051] A first driving signal 113 is connected between the anode 108 and the cathode 112; a second bias signal 114 is connected between the anode 108 and the first control electrode 106; and a third bias signal 115 is connected between the second control electrode 110 and the cathode 112. The second bias signal 114 is used to conduct the second hole transport layer 107 and the thin electron transport layer 105, and to control the amount of holes injected from the anode 108 into the first hole transport layer 103 via the second hole transport layer 107 and the thin electron transport layer 105. The third bias signal 115... The first driving signal 113 is used to conduct the second electron transport layer 111 and the thin hole transport layer 109 and to regulate the amount of electrons injected from the cathode 112 into the first electron transport layer 104 through the second electron transport layer 111 and the thin hole transport layer 109; the first driving signal 113 is used to optimize the balance of electron and hole injection under the regulation of the second bias signal 114 and the third bias signal 115 and to facilitate driving, thereby driving the holes of the first hole transport layer 103 and the electrons of the first electron transport layer 104 to recombine and emit light in the light-emitting composite layer 102 and improve the luminous efficiency.

[0052] In this embodiment, the control gate can inject electrons and holes after being turned on, which can reduce the overall device driving voltage. Furthermore, the magnitudes of the first driving signal 113 and the second driving signal can be set to adjust the injection amount of electrons and holes to achieve a balance between the two and improve the composite luminescence efficiency.

[0053] like Figure 2 As shown, preferably, the thin electron transport layer 105, the second hole transport layer 107, and the anode 108 are arranged at a first inclination, and the thin hole transport layer 109, the second electron transport layer 111, and the cathode 112 are arranged at a second inclination. The first inclination and the second inclination are arranged in an open shape so that the light emitted by the light-emitting composite layer 102 is emitted towards the light outlet side.

[0054] Typically, in this embodiment, the first drive signal 113 is connected to the anode 108, where the anode 108 potential is higher than the cathode 112 potential; the second bias signal 114 is configured to apply a first positive voltage to the anode 108 relative to the first control electrode 106; and the third bias signal 115 is configured to apply a second positive voltage to the first control electrode 106 relative to the cathode 112.

[0055] Furthermore, the first positive phase voltage is greater than the conduction threshold voltage of the second hole transport and the thin electron transport layer 105, and the magnitude of the first positive phase voltage is adjusted according to the hole injection amount required by the composite light-emitting layer.

[0056] Furthermore, the second positive phase voltage is greater than the conduction threshold voltage of the thin hole transport layer 109 and the second electron transport layer 111, and the magnitude of the second positive phase voltage is adjusted according to the amount of electron injection required by the composite light-emitting layer.

[0057] In this embodiment, a first current-limiting resistor is connected in series in the circuit loop of the second bias signal 114, and a second current-limiting resistor is connected in series in the circuit loop of the third bias signal 115.

[0058] In this embodiment, the second bias signal 114 and the third bias signal 115 are current-type drive signals or voltage-type drive signals; the voltage-type drive signal includes an adjustable DC power supply, an energy storage capacitor, or high and low potential nodes.

[0059] The present invention does not limit the material of the light-emitting composite layer 102. Optionally, in this embodiment, the light-emitting composite layer 102 is an LED light-emitting material, an OLED light-emitting material, or a QLED light-emitting material.

[0060] Optionally, in this embodiment, the device further includes a first light-blocking isolation pillar and a second light-blocking isolation pillar; the first light-blocking isolation pillar is disposed on the side of the first control electrode 106, and the second light-blocking isolation pillar is disposed on the side of the second control electrode 110.

[0061] Furthermore, in a second embodiment of the present invention, a parallel gate light-emitting array with carrier dual-gate current modulation is provided, the array including the parallel gate light-emitting devices arranged in an array in the first embodiment.

[0062] The preferred embodiments of the present invention have been described in detail above. It should be understood that those skilled in the art can make numerous modifications and variations based on the concept of the present invention without creative effort. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of the present invention through logical analysis, reasoning, or limited experimentation on the basis of existing technology should be within the scope of protection defined by the claims.

Claims

1. A parallel-gate light-emitting device with carrier dual-gate current modulation, characterized in that, The device includes: Substrate; A light-emitting composite layer disposed on the substrate; A first hole transport layer and a first electron transport layer are respectively disposed on the substrate and located on both sides of the light-emitting composite layer; A thin electron transport layer covering the first hole transport layer; A first control electrode is disposed on the substrate and electrically connected to the side of the thin electron transport layer; A second hole transport layer is disposed on the thin electron transport layer; Anode disposed on the second hole transport layer; A thin hole transport layer covering the first electron transport layer; A second control electrode is disposed on the substrate and electrically connected to the side of the thin hole transport layer; A second electron transport layer is disposed on the thin hole transport layer; A cathode disposed on the second electron transport layer; A first driving signal is connected between the anode and the cathode, a second bias signal is connected between the anode and the first control electrode, and a third bias signal is connected between the second control electrode and the cathode. The second bias signal is used to conduct the second hole transport layer and the thin electron transport layer and to control the amount of holes injected from the anode into the first hole transport layer through the second hole transport layer and the thin electron transport layer. The third bias signal is used to conduct the second electron transport layer and the thin hole transport layer and to control the amount of electrons injected from the cathode into the first electron transport layer through the second electron transport layer and the thin hole transport layer. The first driving signal is used to optimize the balance of electron and hole injection amounts and facilitate driving under the control of the second bias signal and the third bias signal, thereby driving the holes in the first hole transport layer and the electrons in the first electron transport layer to recombine and emit light in the light-emitting composite layer and improve the luminous efficiency.

2. The parallel gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, The thin electron transport layer, the second hole transport layer, and the anode are arranged at a first inclination, and the thin hole transport layer, the second electron transport layer, and the cathode are arranged at a second inclination. The first inclination and the second inclination are arranged in an open shape so that the light emitted by the light-emitting composite layer is emitted towards the light-emitting port side.

3. The parallel gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, The first drive signal is connected to the anode at an anode potential higher than the cathode potential connected to the cathode; the second bias signal is configured to apply a first positive voltage to the anode relative to the first control electrode; the third bias signal is configured to apply a second positive voltage to the second control electrode relative to the cathode.

4. The parallel gate light-emitting device with carrier dual-gate current modulation as described in claim 3, characterized in that, The first positive phase voltage is greater than the conduction threshold voltage of the second hole transport and the thin electron transport layer, and the magnitude of the first positive phase voltage is adjusted according to the hole injection amount required by the light-emitting composite layer.

5. A parallel-gate light-emitting device with carrier dual-gate current modulation as described in claim 3, characterized in that, The second positive phase voltage is greater than the conduction threshold voltage of the thin hole transport layer and the second electron transport layer, and the magnitude of the second positive phase voltage is adjusted according to the amount of electron injection required by the light-emitting composite layer.

6. The parallel gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, A first current-limiting resistor is connected in series in the circuit loop of the second bias signal, and a second current-limiting resistor is connected in series in the circuit loop of the third bias signal.

7. A parallel-gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, The second bias signal and the third bias signal are current-type drive signals or voltage-type drive signals; the voltage-type drive signal includes an adjustable DC power supply, an energy storage capacitor, or high and low potential nodes.

8. A parallel-gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, The luminescent composite layer is an LED luminescent material, an OLED luminescent material, or a QLED luminescent material.

9. A parallel-gate light-emitting device with carrier dual-gate current modulation as described in claim 1, characterized in that, The device further includes a first light-blocking isolation post and a second light-blocking isolation post; the first light-blocking isolation post is disposed on the side of the first control electrode, and the second light-blocking isolation post is disposed on the side of the second control electrode.

10. A parallel gate light-emitting array with carrier dual-gate current modulation, characterized in that, The array includes parallel gate light-emitting devices as described in any one of claims 1-9 arranged in an array.

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