Display panel, preparation method of display panel and display equipment

Abstract

The invention provides a display panel, a preparation method of the display panel and display equipment, and relates to the technical field of display, and the display panel comprises a back plate which comprises N pixel electrodes; the flat layer comprises N grooves, each groove comprises a through hole, and an opening of one through hole is opposite to one pixel electrode; the anode metal layer comprises N sub anode metal layers, is positioned in the groove and covers the through hole; the pixel definition layer covers the edge of the sub-anode metal layer in the groove; the metal ring layer comprises N metal rings which are correspondingly located on the outer edges of the N grooves, and the film layer structure of the metal ring layer is the same as the film layer structure of the anode metal layer; the N grooves are correspondingly covered with the N evaporation layers; and the cathode metal layer comprises N sub cathode metal layers which correspondingly cover the N evaporation layers, and every two adjacent sub cathode metal layers are connected through a metal ring layer. The preparation complexity of the display panel is relatively low, so that the manufacturing cost is reduced, and the display panel has relatively high pixel aperture ratio and pixel density.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a display panel, a method for preparing a display panel, and a display device. Background Art

[0002] With the development of display technology, organic light-emitting diode (OLED) display technology has gradually matured, and accordingly, OLED panels have gradually become the mainstream display panels at this stage.

[0003] In order to ensure that the OLED panel has a high resolution, an OLED panel manufacturing technology based on a fine metal mask (FMM) is proposed. The FMM is provided with dense through holes, which correspond to the positions of the pixel units specified by the OLED panel. In the production process of the OLED panel, organic substances with specific colors can be evaporated onto the OLED panel covered with the FMM by evaporation. These organic substances pass through the through holes on the FMM and are deposited to the specified pixel area, thereby forming pixels.

[0004] However, FMM is a consumable part in the production process of OLED panels and needs to be replaced regularly. FMM itself is not easy to manufacture and the cost is relatively high, which makes the process complexity and cost of OLED panel manufacturing high. The accuracy and usage of FMM also directly affect the display performance of OLED display screens. Due to the limitations of FMM preparation process, the pixel opening rate and pixel density in OLED panels prepared based on FMM are subject to corresponding restrictions. Summary of the invention

[0005] The present application provides a display panel, a method for preparing a display panel, and a display device. By using photolithography technology to achieve OLED film patterning, it is possible to avoid the use of FMM in the manufacturing process of the OLED panel, reduce the process complexity of preparing the OLED panel, thereby helping to reduce the manufacturing cost of the OLED panel, and also help to further increase the pixel aperture ratio and pixel density of the OLED panel.

[0006] In a first aspect, a display panel is provided, comprising: a backplane, a first surface of which comprises N pixel electrodes; a flat layer, which is located on the first surface, the flat layer comprising N grooves, the grooves comprising through holes, an opening of a through hole being opposite to a pixel electrode; an anode metal layer, the anode metal layer comprising N sub-anode metal layers, the sub-anode metal layers being located in the grooves and covering the through holes; a pixel definition layer, which is located in the N grooves and covers edges of the sub-anode metal layers in the grooves; a metal ring layer, which comprises N metal rings, the N metal rings being located at outer edges of the N grooves correspondingly, the film structure of the metal ring layer being the same as that of the anode metal layer; N evaporated layers, the N evaporated layers correspondingly covering the N grooves, and two adjacent evaporated layers being isolated by the metal ring layer; a cathode metal layer, which comprises N sub-cathode metal layers, the N sub-cathode metal layers correspondingly covering the N evaporated layers, and two adjacent sub-cathode metal layers being connected by the metal ring layer.

[0007] In combination with the first aspect, in certain implementations of the first aspect, the metal ring layer includes a first protective layer, a conductive layer, and a second protective layer, the conductive layer is located between the first protective layer and the second protective layer, and the width of the conductive layer is smaller than the width of the first protective layer and the second protective layer.

[0008] In combination with the first aspect, in certain implementations of the first aspect, the above-mentioned N sub-cathode metal layers include a first sub-cathode metal layer and a second sub-cathode metal layer, the first sub-cathode metal layer is adjacent to the second sub-cathode metal layer, the first part of the first sub-cathode metal layer fills the first gap between the first protective layer and the second protective layer, and the second part of the second sub-cathode metal layer fills the second gap between the first protective layer and the second protective layer.

[0009] In combination with the first aspect, in some implementations of the first aspect, the display panel further includes: a packaging layer, which covers the cathode metal layer and the metal ring layer.

[0010] In combination with the first aspect, in some implementations of the first aspect, the pixel definition layer includes a light absorbing material.

[0011] In combination with the first aspect, in some implementations of the first aspect, the display panel further includes: a light shielding layer, the light shielding layer includes a light absorbing material, the light shielding layer is embedded in the encapsulation layer, and the light shielding layer covers the pixel definition layer.

[0012] In a second aspect, a method for preparing a display panel is provided, the method comprising: preparing a flat layer, the flat layer being located on a back plate, the flat layer comprising N grooves, the grooves comprising through holes, the through holes being used to expose pixel electrodes arranged on the back plate; preparing an anode metal layer, the anode metal layer covering the flat layer; preparing a first photoresist and a second photoresist on the anode metal layer, the first photoresist being located outside the N grooves and surrounding the N grooves, the second photoresist being located inside the N grooves and at least part of the second photoresist covering the through holes of the N grooves, so as to obtain a first film layer structure; etching the first film layer structure, and stripping off the first photoresist and the second photoresist, so as to obtain a second film layer structure, the outer edges of the N grooves of the second film layer structure retain a metal ring layer, the metal ring layer comprising N metal rings, the part inside the metal rings being used to prepare a vapor-deposited layer, and among the M metal rings arranged along the first direction, the colors of the vapor-deposited layers in two adjacent metal rings are different.

[0013] In combination with the second aspect, in certain implementations of the second aspect, the metal ring layer includes a first protective layer, a first conductive layer, and a second protective layer, the first conductive layer is located between the first protective layer and the second protective layer, and the first conductive layer is etched to obtain the second conductive layer, and the width of the second conductive layer is smaller than the first protective layer and the second protective layer of the metal ring layer.

[0014] In combination with the second aspect, in certain implementations of the second aspect, a pixel definition layer is prepared, which surrounds a portion of the anode metal layer retained in each groove and covers an edge of a portion of the anode metal layer to obtain a third film layer structure.

[0015] In combination with the second aspect, in certain implementations of the second aspect, a first evaporated layer is evaporated on the first groove set of the third film layer structure to obtain a fourth film layer structure, the first groove set includes J grooves, J is less than N, and the first evaporated layer is a first color.

[0016] In combination with the second aspect, in certain implementations of the second aspect, a first process evaporated layer is evaporated on the first surface of the third film layer structure, and the first process evaporated layer is a first color; a third photoresist is prepared, and the third photoresist covers the first groove set; the third film layer structure after the third photoresist is set is etched, and the portion of the first process evaporated layer outside the coverage of the third photoresist is removed to obtain the first evaporated layer; and the third photoresist is stripped off.

[0017] In combination with the second aspect, in certain implementations of the second aspect, a first cathode metal layer is prepared, the first cathode metal layer covers the first process evaporated layer, and the portions of the first cathode metal layer corresponding to two adjacent grooves are connected by a metal ring layer.

[0018] In combination with the second aspect, in some implementations of the second aspect, a first encapsulation layer is prepared, the first encapsulation layer covers the first cathode metal layer; and a third photoresist is prepared on the first encapsulation layer.

[0019] In combination with the second aspect, in certain implementations of the second aspect, a second evaporated layer is evaporated on the second groove set of the fourth film layer structure to obtain a fifth film layer structure, the second groove set includes L grooves, L is less than N, and the second evaporated layer is a second color.

[0020] In combination with the second aspect, in certain implementations of the second aspect, a second process evaporated layer is evaporated on the second surface of the fourth film layer structure, and the second process evaporated layer is a second color; a second cathode metal layer is prepared, and the second cathode metal layer covers the second process evaporated layer, and the parts of the second cathode metal layer corresponding to two adjacent grooves are connected by a metal ring layer; a second encapsulation layer is prepared, and the second encapsulation layer covers the second cathode metal layer; a fourth photoresist is prepared on the second encapsulation layer, and the fourth photoresist covers the second groove set; the fourth film layer structure after the fourth photoresist is set is etched, and the part of the second process evaporated layer outside the coverage of the fourth photoresist is removed to obtain the second evaporated layer; the fourth photoresist is stripped off.

[0021] In combination with the second aspect, in some implementations of the second aspect, the pixel definition layer includes a light absorbing material.

[0022] In combination with the second aspect, in certain implementations of the second aspect, a light shielding layer is prepared, the light shielding layer includes a light absorbing material, and the light shielding layer covers the pixel definition layer.

[0023] In combination with the second aspect, in some implementations of the second aspect, a panel encapsulation layer is prepared, where the panel encapsulation layer covers the first encapsulation layer and the second encapsulation layer.

[0024] In a third aspect, a display device is provided, comprising a display panel in any possible implementation of the display panel design of the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic flow chart of a method 100 for manufacturing a display panel proposed in an embodiment of the present application;

[0026] Figure 2 is a schematic diagram of the structure of a flat layer proposed in an embodiment of the present application;

[0027] Figure 3 is a schematic structural diagram of an anode metal layer proposed in an embodiment of the present application;

[0028] Figure 4 is a schematic diagram of a first film layer structure proposed in an embodiment of the present application;

[0029] Figure 5 is a schematic diagram of a second film layer structure proposed in an embodiment of the present application;

[0030] Figure 6 This is a schematic diagram of a cathode metal layer electrically connected based on a metal ring layer, as proposed in an embodiment of the present application;

[0031] Figure 7 is a schematic diagram of a third film layer structure proposed in an embodiment of the present application;

[0032] Figure 8 is a schematic flow chart of a method 800 for evaporating a first evaporation layer proposed in an embodiment of the present application;

[0033] Fig. 9 is a schematic diagram of a third film layer structure having a first process evaporated layer evaporated thereon, as proposed in an embodiment of the present application;

[0034] Fig.10 is a schematic diagram of a third film layer structure having a first cathode metal layer prepared according to an embodiment of the present application;

[0035] Fig.11 is a schematic diagram of a third film layer structure covered with a first packaging layer proposed in an embodiment of the present application;

[0036] Fig.12 is a schematic diagram of a third photoresist setting position proposed in an embodiment of the present application;

[0037] Fig.13 is a schematic diagram of a fourth film layer structure proposed in an embodiment of the present application;

[0038] Fig.14 is a schematic flow chart of a second vapor deposition method 1400 proposed in an embodiment of the present application;

[0039] Fig.15 is a schematic diagram of a fourth film layer structure having a second process evaporated layer evaporated thereon, as proposed in an embodiment of the present application;

[0040] Fig.16 is a schematic diagram of a fifth film layer structure proposed in an embodiment of the present application;

[0041] Fig.17 It is a structural schematic diagram of a display panel prepared with a panel encapsulation layer proposed in an embodiment of the present application;

[0042] Fig.18 is a schematic diagram of a display panel 1800 proposed in an embodiment of the present application;

[0043] Fig.19It is a schematic diagram of another display panel 1800 proposed in an embodiment of the present application. DETAILED DESCRIPTION

[0044] The technical solution in this application will be described below in conjunction with the accompanying drawings.

[0045] The embodiments of the present application will present various aspects, embodiments or features around a system including multiple devices, components, modules, etc. It should be understood and appreciated that each system may include additional devices, components, modules, etc., and / or may not include all devices, components, modules, etc. discussed in conjunction with the figures. In addition, combinations of these schemes may also be used.

[0046] In addition, in the embodiments of the present application, words such as "exemplary" and "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplary" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the word "exemplary" is intended to present concepts in a concrete way.

[0047] The business scenarios described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Ordinary technicians in this field can know that with the evolution of technology and the emergence of new business scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0048] References to "one embodiment" or "some embodiments" etc. described in this specification mean that a particular feature, structure or characteristic described in conjunction with the embodiment is included in one or more embodiments of the present application. Thus, the phrases "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear at different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0049] In the embodiments of the present application, "at least one" refers to one or more, and "plurality" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can be represented by: including the existence of A alone, the existence of A and B at the same time, and the existence of B alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and subsequent associated objects are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can be represented by: a, b, c, ab, ac, bc, or abc, where a, b, c can be single or multiple.

[0050] In order to ensure the accuracy of the color evaporation position of the pixel of the OLED panel, an OLED panel manufacturing technology based on FMM is proposed at this stage. Among them, FMM is a thin metal mask with small and dense holes. Taking the preparation of RGB display screen as an example, it is mainly used to deposit RGB organic substances (such as evaporation materials) through the mask and form pixels during the OLED preparation process. The positions of these through-hole designs correspond to the pixel positions to ensure that the evaporation material can be accurately deposited at the specified pixel position. At least 3 patterns of FMM are required in this process, and each pattern of FMM is used to complete the evaporation of a color of the evaporation layer.

[0051] Considering that the screen usually includes pixels of multiple colors, taking the most common OLED panel based on red, yellow and blue (RGB) pixels as an example, it is necessary to complete the evaporation of three colors on the OLED panel, and usually, for a row of pixels, the colors of two adjacent pixels are different, so the evaporation layers corresponding to these two pixels should be two different colors, but when the evaporation layers of different colors are connected, crosstalk of pixel colors will occur, resulting in color distortion of the picture, which requires a separate isolation layer (also called isolation column or isolation ring, etc.) to be prepared between the evaporation layers of different colors to increase the distance between the two evaporation layers of different colors, thereby avoiding the generation of pixel color crosstalk. And based on this isolation layer, it is also necessary to realize the electrical connection between the cathode metal layer covered on each evaporation layer.

[0052] Moreover, FMM is not easy to make. In order to avoid color crosstalk between two adjacent colors of vapor-deposited layers, a certain position needs to be reserved between the positions of the vapor-deposited layers corresponding to the two colors in the FMM, which further increases the difficulty of preparing FMM for OLED panels, resulting in high manufacturing costs and process complexity for OLED panels prepared based on FMM lithography technology. Moreover, under the limitation of FMM preparation process bars, it is difficult for OLED panels prepared based on FMM lithography technology to further increase the pixel aperture ratio and pixel density of the panel.

[0053] In view of this, the embodiments of the present application propose a display panel, a method for preparing a display panel, and a display device, which adopt photolithography technology to execute a specially designed display panel preparation process to sequentially form corresponding film layers on the OLED backplane, thereby avoiding the use of FMM in the manufacturing process of the OLED panel and reducing the process complexity of preparing the OLED panel, thereby helping to reduce the manufacturing cost of the OLED panel. In addition, while ensuring the accuracy of pixel evaporation, it also helps to further increase the pixel opening ratio and pixel density of the OLED panel.

[0054] Photolithography is one of the core processes in microelectronics manufacturing. It transfers precise patterns onto semiconductor materials or thin films by utilizing light irradiation. In the photolithography process, a layer of photosensitive material (such as photoresist) is first coated on the surface of the material, and then a specific pattern is projected onto the photoresist through a mask. Then, the principle of photochemical reaction is used to distinguish the exposed part from the unexposed part of the photoresist, and the exposed part of the photoresist or the unexposed part of the photoresist is removed through steps such as development (depending on whether the photoresist is negative photoresist or positive photoresist), thereby forming the desired pattern on the surface of the material.

[0055] In the embodiments of the present application, photolithography technology is mainly used to define the pixel shape and position of the OLED panel, so that a high-precision pixel pattern is formed on the OLED backplane, thereby achieving a high-resolution and high-definition display effect.

[0056] In addition, the film layer structure proposed in the embodiment of the present application refers to a film layer structure prepared on the OLED backplane for pixel imaging. These film layers may include: a flat layer, a pixel definition layer, an anode metal layer, a vapor-deposited layer (including multiple colors), an isolation layer (or isolation column, isolation ring, etc.), a cathode metal layer, and an encapsulation layer.

[0057] In the conventional preparation process of OLED panels based on photolithography technology, it is necessary to first prepare a flat layer on the OLED backplane, and the flat layer includes multiple raised table tops, and the gaps between the multiple table tops are used to expose the pixel electrodes on the OLED backplane; then, an anode metal layer and a pixel definition layer are sequentially prepared on the multiple table tops of the flat layer, and both of these film layers need to cover the pixel electrodes located in the gaps between the multiple table tops; then, a vapor-deposited layer of the corresponding pixel color is evaporated on the pixel definition layer, and in this process, it is necessary to separately prepare an isolation layer between the vapor-deposited layers of the two pixel colors to avoid crosstalk between the vapor-deposited layers of the two pixel colors, and the preparation of the isolation layer requires a separate mask plate to prepare the isolation layer.

[0058] Based on the above description of photolithography technology, it can be known that even if photolithography technology is used, a corresponding mask is required in the process of preparing the corresponding film structure, but this ordinary mask is significantly lower in manufacturing difficulty and cost than the FMM mentioned above. Even so, based on the specially designed display panel preparation process proposed in the embodiment of the present application, the use of masks can be reduced as much as possible, and the preparation of an isolation layer for isolating the vapor-deposited layer of two pixel colors can be avoided separately, thereby further reducing the manufacturing process complexity and manufacturing cost of the OLED panel.

[0059] Figure 1 It is a schematic flow chart of a method 100 for manufacturing a display panel proposed in an embodiment of the present application.

[0060] refer to Figure 1 As shown, the above preparation method 100 comprises the following steps:

[0061] S110: preparing a flat layer.

[0062] Figure 2 It is a schematic diagram of the structure of a flat layer proposed in an embodiment of the present application.

[0063] refer to Figure 2 As shown, the planar layer is located on the back plate, and the planar layer includes N grooves, and the grooves include through holes, and the through holes are used to expose the pixel electrodes arranged on the back plate.

[0064] It can be seen that the flat layer prepared based on S110 includes three height levels, namely the level where the through hole is located, the level where the bottom of the groove (excluding the through hole part) is located, and the level outside the groove. Figure 2 In the figure, the lighter the color, the lower the height.

[0065] In some possible embodiments, the flat layer may be prepared using a halftone exposure process, wherein the material of the flat layer is exposed for the same length of time using three exposure intensities, so that the portion of the flat layer that remains after development has Figure 2 The three height levels shown form three step differences.

[0066] In some possible embodiments, the backplane may be a backplane of an OLED display screen.

[0067] S120: preparing an anode metal layer.

[0068] Figure 3 It is a schematic diagram of the structure of an anode metal layer proposed in an embodiment of the present application.

[0069] refer to Figure 3 As shown, the anode metal layer covers the above-mentioned planar layer.

[0070] It should be understood that since the through hole is part of the groove, and the groove is part of the flat layer, the through hole is also a part of the structure of the flat layer. Therefore, the anode metal layer covering the flat layer not only includes covering the groove part, but also includes covering the through hole and the part outside the groove. In other words, the entire flat layer located on the back plate is fully covered.

[0071] In some possible embodiments, the anode metal layer is a three-layer metal structure, and the anode metal layer can be prepared using a sputtering coating process to coat the three-layer metal structure. The three film layers serve as a first protective layer, a first conductive layer, and a second protective layer, respectively, and the first conductive layer is sandwiched between the two protective layers.

[0072] In some possible embodiments, the materials of the three film layers of the above-mentioned anode metal layer can correspond to titanium (Ti), aluminum (Al) and titanium (Ti) in sequence, or indium tin oxide (ITO), silver (Ag) and indium tin oxide (ITO), or other metal material combinations suitable as anodes.

[0073] S130: preparing a first photoresist and a second photoresist on the anode metal layer to obtain a first film layer structure.

[0074] Figure 4 It is a schematic diagram of a first film layer structure proposed in an embodiment of the present application.

[0075] refer to Figure 4 As shown in the cross-sectional side view in FIG. 1 , the first photoresist is located outside the N grooves and surrounds the N grooves, the second photoresist is located inside the N grooves and at least a portion of the second photoresist covers the through holes of the N grooves. Figure 4 As shown in the top view in FIG. 1 , the blank part in the figure is the shape and distribution form of the first photoresist or the second photoresist.

[0076] It should be understood that the first photoresist being located outside the N grooves means that the first photoresist is located at the highest terrace portion of the flat layer.

[0077] In some possible embodiments, the first photoresist and the second photoresist may be prepared in the following manner:

[0078] The photoresist is evenly coated on the anode metal layer; then a mask is prepared, the mask comprising a light-shielding portion and a light-transmitting portion. When the photoresist is a negative photoresist, the light-transmitting portion of the mask corresponds to the above Figure 4 The positions of the first photoresist and the second photoresist shown in the figure, when the photoresist is a positive photoresist, the light shielding portion of the mask corresponds to the above Figure 4 The positions of the first photoresist and the second photoresist are shown; then the back plate coated with the photoresist is placed in a photolithography machine and exposed using the above mask; finally, the photoresist after exposure is developed using a developer to dissolve or swell the exposed (for positive photoresist) or unexposed (for negative photoresist) parts, and a cleaning agent is used to clean and retain the exposed (for positive photoresist) or unexposed (for negative photoresist) parts. Figure 4 The first photoresist and the second photoresist shown in the figure are used to obtain the above Figure 4 The first film layer structure is shown.

[0079] S140: etching the first film layer structure, and stripping off the first photoresist and the second photoresist to obtain a second film layer structure.

[0080] Figure 5 It is a schematic diagram of a second film layer structure proposed in an embodiment of the present application.

[0081] refer to Figure 5 As shown in the cross-sectional side view in FIG. 1 , the outer edges of the N grooves of the second film structure retain a metal ring layer, and the metal ring layer includes N metal rings. Figure 5 As shown in the top view in FIG. 1 , the portion inside the metal ring is used to prepare the evaporated layer. Among the M metal rings arranged along the first direction, the colors of the evaporated layers in two adjacent metal rings are different.

[0082] It should be understood that the outer edges of the N grooves of the second film layer structure refer to the highest terrace portion in the flat layer.

[0083] In addition, based on the structural description of the above metal ring layer, it can be seen that Figure 5 Taking the metal ring layer shown as an example, the edge of each metal ring can be used to isolate evaporated layers of different colors, thereby achieving the function of the above-mentioned isolation layer.

[0084] In some possible embodiments, the shape of the metal ring is not limited to a rectangle. Based on the preparation method 100 proposed in the embodiment of the present application, the shape of the metal ring can be adaptively adjusted to different groove shapes to adapt to the groove structure of the platform layer.

[0085] Based on the above technical solution, through a specially designed display panel preparation process, the flat layer is prepared into a layer structure with three heights, namely, a table, a groove and a through hole, and when preparing the anode metal layer, the entire flat layer is covered, and in the photolithography process, only one exposure operation is required to immediately realize the preparation of the isolation layer, that is, the unnecessary part of the anode metal layer is removed during the exposure operation, and in particular, part of the anode metal layer on the table of the flat layer is retained as an isolation layer for isolating adjacent different color vapor-deposited layers, thereby avoiding the separate preparation of the isolation layer, simplifying the display panel preparation process, and helping to reduce the preparation cost of the OLED panel.

[0086] In some possible embodiments, considering that a cathode metal layer needs to be prepared on the evaporated layer prepared in each metal ring in the metal ring layer, and the cathode metal layers in each metal ring need to be electrically connected, and the metal ring layer is obtained after exposure operation based on the anode metal layer, the intralayer structure and material of the metal ring layer should be consistent with the anode metal layer, so the metal ring layer also corresponds to a first protective layer, a first conductive layer and a second protective layer.

[0087] In some possible embodiments, the first conductive layer may be located on the first protective layer, and the second protective layer may be located on the first conductive layer; or the first conductive layer may be located on the second protective layer, and the first protective layer may be located on the first conductive layer.

[0088] It should be understood that based on the materials of the three film layers of the anode metal layer, the first protective layer and the second protective layer are also metals and have a certain degree of conductivity.

[0089] In some possible embodiments, in order to meet the requirement of electrical connection between the cathode metal layers, after obtaining the second film layer structure, the following operations may be performed:

[0090] The first conductive layer of the metal ring layer is etched to obtain a second conductive layer, wherein the width of the second conductive layer is smaller than the first protective layer and the second protective layer of the metal ring layer.

[0091] In some possible embodiments, the etching process for the metal ring layer may be wet etching, and the etching is in the form of lateral etching. Taking a metal ring in the metal ring layer as an example, lateral etching refers to etching the first conductive layer corresponding to the edge of the metal ring from both sides inward to form an undercut structure, which may also be called a roof structure, an undercut structure, etc. Of course, other etching methods may also be adaptively adopted under different preparation conditions.

[0092] It should be understood that the reason for the selective etching of the metal ring layer is that the material property of the first conductive layer is more active, so the difficulty of etching the first conductive layer is lower and the rate is faster.

[0093] In some possible embodiments, based on the fact that the metal ring layer can be used to realize the function of electrically connecting two adjacent cathode metal layers, the metal ring layer can also be called an auxiliary cathode structure.

[0094] Figure 6 This is a schematic diagram of an electrical connection of a cathode metal layer based on a metal ring layer proposed in an embodiment of the present application.

[0095] In some possible embodiments, taking the second conductive layer being located on the first protective layer as an example, refer to Figure 6 As shown, cathode metal layers are respectively arranged on both sides of one edge of the metal ring layer, and one end of the two cathode metal layers can be directly placed on both sides of the first protective layer and connected through the metal ring layer. Further, one end of the two cathode metal layers can be connected through the second conductive layer of the metal ring layer.

[0096] It can be seen from this that based on the metal ring layer with an undercut structure, the two cathode metal layers can be more easily fixed on both sides of the second conductive layer and achieve electrical connection.

[0097] Based on the above technical solution, by laterally etching the first conductive layer of the metal ring layer, each edge of the metal ring layer can present an undercut structure, so that the cathode metal layers on both sides of the edge can overlap the protective layer located under the first conductive layer and be electrically connected through the first conductive layer. This method is easy to implement and has a fast speed, thereby further reducing the difficulty of preparing the isolation layer.

[0098] It should be understood that the above-mentioned second film layer structure is only a film layer structure for completing the preparation of the metal ring layer, and is not a complete OLED panel structure.

[0099] In some possible embodiments, after the preparation of the second film layer structure is completed, the following subsequent operations need to be performed: preparing a pixel definition layer to obtain a third film layer structure.

[0100] The pixel definition layer is used to define the boundaries of the pixels of the display screen, prevent light crosstalk and current crosstalk between adjacent pixels, and affect the aperture ratio and display efficiency of the pixels.

[0101] Figure 7 It is a schematic diagram of a third film layer structure proposed in an embodiment of the present application.

[0102] refer to Figure 7 As shown, the pixel definition layer surrounds the portion of the anode metal layer retained in each groove and covers the edge of the portion of the anode metal layer.

[0103] In some possible embodiments, reference Figure 7 As shown in (a), the pixel definition layer covers the through hole portion covered by the anode metal layer, i.e., fills up the depression caused by the anode metal layer covering the through hole. Based on the covering structure of the pixel definition layer, the difficulty of evaporation caused by the depression of the anode metal layer when preparing the evaporation layer on the entire film layer structure can be reduced.

[0104] In some possible embodiments, reference Figure 7 As shown in (b), the pixel definition layer does not cover the through hole portion covered by the anode metal layer. Based on the covering structure of the pixel definition layer, the overlapping area of ​​the vapor-deposited layer and the anode metal layer can be increased as much as possible, thereby increasing the pixel aperture ratio and the pixel density of the OLED panel.

[0105] In some possible embodiments, after completing the preparation of the third film layer structure, the following subsequent operations are required: evaporating a first evaporated layer on the first groove set of the third film layer structure to obtain a fourth film layer structure, wherein the first groove set includes J grooves, J is less than N, and the first evaporated layer is a first color.

[0106] Taking an RGB display screen as an example, the first groove set may be used to evaporate a deposition layer of one color, namely, the first deposition layer, and the first deposition layer may be red, green or blue.

[0107] Figure 8 It is a schematic flow chart of a method 800 for evaporating a first evaporation layer proposed in an embodiment of the present application.

[0108] refer to Figure 8 As shown, the evaporation method 800 includes the following steps:

[0109] S810: vapor-depositing a first-process vapor-deposited layer on a first surface of the third film layer structure, wherein the first-process vapor-deposited layer is a first color.

[0110] Fig. 9 It is a schematic diagram of a third film layer structure having a first process evaporated layer evaporated therein proposed in an embodiment of the present application.

[0111] refer to Fig. 9 As shown, the first surface of the third film layer structure refers to the surface of the third film layer structure that is exposed upward as a whole. The first surface may include the upper surface of part of the platform of the above-mentioned flat layer, the upper surface of the metal ring layer, the upper surface of the pixel definition layer, and the upper surface of part of the anode metal layer, and the above-mentioned first process evaporation layer is a layer of evaporation material with a specified color evaporated on these surfaces.

[0112] In some possible embodiments, in order to meet the working principle and performance requirements of the display screen, it is necessary to introduce a cathode metal layer into the above film layer structure, so as to provide the display screen with necessary conductivity, ensure the injection efficiency and stability of electrons, and realize the normal and stable light emission of the display screen. Therefore, after completing the evaporation of the above first process evaporation layer, the following operation can also be performed: preparing the first cathode metal layer.

[0113] Fig.10 It is a schematic diagram of a third film layer structure having a first cathode metal layer prepared in an embodiment of the present application.

[0114] refer to Fig.10 As shown, the first cathode metal layer covers the first process vapor deposition layer, and the first cathode metal layer corresponding to two adjacent grooves is connected by the metal ring layer. At this time, the metal ring layer acts as an auxiliary cathode and performs the function of conducting electricity outward.

[0115] In some possible embodiments, parts of the first cathode metal layers of two adjacent grooves may be directly connected through a conductive layer in the metal ring layer.

[0116] In some possible embodiments, the cathode metal layer may be prepared by spin evaporation.

[0117] In some possible embodiments, the material of the cathode metal layer may be a material with high conductivity and high electron transmittance, such as magnesium (Mg), silver (Ag), and the like.

[0118] In some possible embodiments, considering that the materials used in each film layer in the third film layer structure prepared with the first cathode metal layer are usually sensitive to moisture and oxygen, and are prone to react, which eventually leads to dark spots on the display screen, and in addition, subsequent process flows are required after obtaining the third film layer structure prepared with the first cathode metal layer, so it is necessary to provide a relatively flat surface for the subsequent process flows while protecting the currently obtained film layer structure accordingly, so as to prepare the subsequent corresponding film layer structure. In this regard, the embodiment of the present application proposes that after completing the preparation of the first cathode metal layer, the following operation can also be performed: preparing a first encapsulation layer.

[0119] Fig.11It is a schematic diagram of a third film layer structure covered with a first packaging layer proposed in an embodiment of the present application.

[0120] refer to Fig.11 As shown, the first packaging layer covers the first cathode metal layer.

[0121] In some possible embodiments, the first encapsulation layer can be prepared by a chemical vapor deposition process, and the first cathode metal layer can fully cover the cathode metal layer underneath and the first process evaporation layer to prevent operations such as water washing processes in subsequent process flows from causing failure of the evaporation material.

[0122] In some possible embodiments, the material of the first encapsulation layer may be silicon nitride (SiNx), silicon-based oxide (SiOx) or other composite materials used for isolation.

[0123] Since the first process evaporation layer fully covers all the grooves and is not targeted at the first groove set, the following operations need to be continued.

[0124] S820: preparing a third photoresist.

[0125] Fig.12 It is a schematic diagram of a third photoresist setting position proposed in an embodiment of the present application.

[0126] refer to Fig.12 As shown, the third photoresist covers the first groove set.

[0127] In some possible embodiments, when preparing the first encapsulation layer, a third photoresist may be prepared on the upper surface of the first encapsulation layer. The distribution position of the third photoresist may refer to Fig.11 shown.

[0128] In some possible embodiments, without preparing the first encapsulation layer, a third photoresist may be prepared on the upper surface of the first cathode metal layer.

[0129] S830: Etching the third film layer structure after the third photoresist is set, and removing a portion of the first process evaporated layer outside the coverage of the third photoresist to obtain the first evaporated layer.

[0130] The process of etching the third film layer structure may refer to the aforementioned photolithography process, which will not be repeated here.

[0131] S840: stripping off the third photoresist to obtain a fourth film layer structure.

[0132] Fig.13 It is a schematic diagram of a fourth film layer structure proposed in an embodiment of the present application.

[0133] refer to Fig.13 As shown, in the above method 800, part of the first process evaporated layer outside the coverage of the third photoresist is removed, and part of the first process evaporated layer is also covered by part of the first cathode metal layer, and part of the first packaging layer may also be covered on the first cathode metal layer. Therefore, after removing this part of the first process evaporated layer, part of the film layer structure covered by this part of the first process evaporated layer will also be removed synchronously, thereby forming Fig.13 As shown, only the fourth film layer structure of the first evaporated layer, the first cathode metal layer and the first encapsulation layer is retained above the first groove set, and as for the rest, the pixel definition layer, the anode metal layer and the platform portion of the planar layer are still exposed.

[0134] Based on the above technical solution, the preparation of a single-color vapor-deposited layer in some grooves can be achieved through photolithography technology, and the preparation process is relatively simple. It is only necessary to prepare the vapor-deposited layer, the cathode metal layer and the packaging layer in sequence on the entire film layer structure, and through etching technology, the film layer structure of the first groove collection part can be retained.

[0135] In some possible embodiments, the fourth film layer structure can also be prepared directly based on the mask plate, and the method is as follows: first, a mask plate with a special structure is prepared, and the position of the light-transmitting part of the mask plate corresponds to the first groove set; then the mask plate is aligned with the third film layer structure, and then based on the mask plate, the first evaporated layer, the first cathode metal layer and the first packaging layer are prepared in sequence on the third film layer structure.

[0136] In some possible embodiments, since the fourth film layer structure only includes one pixel color, for the RGB display screen, on the basis of the fourth film layer structure, it is necessary to continue to prepare two evaporated layers of different colors. Therefore, after obtaining the fourth film layer structure, the following operation can also be performed: evaporate the second evaporated layer on the second groove set of the fourth film layer structure to obtain the fifth film layer structure, the second groove set includes L grooves, L is less than N, and the second evaporated layer is the second color.

[0137] For example, taking an RGB display screen as an example, when the first color is red, the second color may be green or blue.

[0138] Fig.14 It is a schematic flow chart of a second vapor deposition method 1400 proposed in an embodiment of the present application.

[0139] The evaporation method 1400 may be followed by the evaporation method 800 described above. Fig.14 As shown, the evaporation method 1400 includes the following steps:

[0140] S1410: vapor-depositing a second process vapor-deposited layer on the second surface of the fourth film layer structure, wherein the second process vapor-deposited layer is a second color.

[0141] Fig.15 It is a schematic diagram of a fourth film layer structure having a second process evaporated layer evaporated therein proposed in an embodiment of the present application.

[0142] Refer to the above Fig.15 As shown, the second surface of the fourth film layer structure refers to the surface of the fourth film layer structure that is exposed upward as a whole, and the second surface may include the upper surface of part of the platform of the flat layer, the upper surface of the metal ring layer, the upper surface of the pixel definition layer, and the upper surface of part of the anode metal layer, and the second process evaporation layer is a layer of evaporation material with a specified color evaporated on these surfaces.

[0143] S1420: preparing a second cathode metal layer, wherein the second cathode metal layer covers the second process evaporated layer, and parts of the second cathode metal layer corresponding to two adjacent grooves are connected by a metal ring layer.

[0144] In some possible embodiments, parts of the second cathode metal layers of two adjacent grooves may be directly connected through a conductive layer of a metal ring layer.

[0145] S1430: Prepare a second packaging layer, where the second packaging layer covers the second cathode metal layer.

[0146] Similar to the preparation of the first cathode metal layer and the first packaging layer, the second cathode metal layer and the second packaging layer are prepared on the entire upper surface of the fourth film layer structure on which the second process vapor-deposited layer is vapor-deposited.

[0147] S1440: Prepare a fourth photoresist on the second encapsulation layer, where the fourth photoresist covers the second groove set.

[0148] S1450: etching the fourth film layer structure after the fourth photoresist is set, and removing part of the second process evaporated layer outside the coverage of the fourth photoresist to obtain the above-mentioned second evaporated layer.

[0149] The process of etching the fourth film layer structure may refer to the aforementioned photolithography process, which will not be repeated here.

[0150] In some possible embodiments, since the second process evaporated layer is usually an organic material and the first encapsulation layer is usually an inorganic material, when etching the fourth film layer structure, it is possible to directly etch the organic material exposed outside the coverage of the fourth photoresist, thereby removing part of the second process evaporated layer outside the coverage of the fourth photoresist to obtain the above-mentioned second evaporated layer.

[0151] S1460: stripping off the fourth photoresist to obtain a fifth film layer structure.

[0152] Fig.16 It is a schematic diagram of a fifth film layer structure proposed in an embodiment of the present application.

[0153] refer to Fig.16 It can be seen that after the above-mentioned evaporation method 1400 is completed, the fifth film layer structure already has two colors of evaporation layers and is also covered with the corresponding second cathode metal layer and the second packaging layer. As for the remaining part, the process flow proposed by the evaporation method 1400 can be used to prepare the third evaporation layer of the third color, the third cathode metal layer and the third packaging layer at the remaining designated positions. This application does not elaborate on this.

[0154] Based on the above technical solution, not only can the second evaporated layer, the second cathode metal layer and the second packaging layer be evaporated in the second groove set, but also in the process of preparing these three film layers, the structures of the first evaporated layer, the first cathode metal layer and the first packaging layer that have been prepared before will not be affected, and the process flow of this method is relatively simple and the cost is low.

[0155] In some possible embodiments, the material of the pixel definition layer may include a light absorbing material.

[0156] Among them, light-absorbing materials refer to materials that, when light shines on an object made of this material, most of the light is absorbed rather than transmitted or reflected.

[0157] Based on the above technical solution, light absorbing materials are used in the pixel definition layer, which can effectively reduce the interference from light outside the display screen during use of the display screen and improve the display effect of the display screen.

[0158] In some possible embodiments, after the first encapsulation layer and the second encapsulation layer are completed, a light shielding layer may be prepared on the first encapsulation layer and the second encapsulation layer, and the light shielding layer is used to cover the pixel definition layer.

[0159] In some possible embodiments, the light shielding layer may further cover the metal ring layer.

[0160] In some possible embodiments, the material of the light shielding layer may be the light absorbing material.

[0161] Based on the above technical solution, by introducing a light shielding layer into the display screen, the interference from light outside the display screen can also be effectively reduced, thereby improving the display effect of the display screen.

[0162] In some possible embodiments, taking the RGB display screen as an example, after completing the evaporation of the above-mentioned three-color evaporation layers, and the cathode metal layer and the packaging layer (for example, the first packaging layer, the second packaging layer and the third packaging layer) covering the three-color evaporation layers, the following operation can also be performed: prepare a panel packaging layer to obtain a display screen panel.

[0163] Fig.17 It is a schematic diagram of the structure of a display panel with a panel packaging layer proposed in an embodiment of the present application.

[0164] refer to Fig.17 As shown, the panel encapsulation layer covers the first encapsulation layer and the second encapsulation layer. Of course, for the RGB display screen, the panel encapsulation layer will also cover the third encapsulation layer. The upper surface of the panel encapsulation layer is flat, so that the entire display screen has a flat surface, so that other protective layers or functional layers, such as color film layers, touch layers, etc., can be added to the panel encapsulation layer of the display screen in the future. In addition, the panel encapsulation layer can effectively prevent external foreign matter such as water and oxygen from entering the interior of the display panel.

[0165] In some possible embodiments, taking the first packaging layer as an example, the panel packaging layer and the first packaging layer can be used to form a three-layer packaging structure. It can be seen that the panel packaging layer can be a double-layer structure, wherein the material of the first layer structure can be an organic ink material, the material of the second layer structure can be silicon nitride (SiN), and the first layer structure can be located between the second layer structure and the first packaging layer, wherein the material of the first packaging layer can also be SiN.

[0166] Based on the above technical solution, the first encapsulation layer, the second encapsulation layer, etc. introduced in the process of preparing the display panel can be utilized to form a three-layer encapsulation structure with the panel encapsulation layer covering the entire display panel, which helps to increase the sealing of the display panel and keep external foreign matter such as water and oxygen from entering the interior of the display panel, thereby extending the service life of the display panel and improving the stability of the display panel.

[0167] It should be noted that the preparation method of the embodiment of the present application is described in the context of display screen preparation, and the idea of ​​performing photolithography on the prepared film layer structure and retaining a part as an isolation layer between other film layer structures proposed in the embodiment of the present application can also be applied to other types of circuit backplanes.

[0168] In addition, an embodiment of the present application further provides a display panel, which can be obtained based on any one of the display panel preparation methods provided in the embodiments of the present application.

[0169] Fig.18 It is a schematic diagram of a display panel 1800 proposed in an embodiment of the present application.

[0170] refer to Fig.18 As shown, the display panel 1800 includes:

[0171] A back plate 1810, wherein a first surface 01 of the back plate 1810 includes N pixel electrodes 1811, where N is a positive integer;

[0172] A planar layer 1820, the planar layer 1820 is located on the first surface 01, the planar layer 1820 includes N grooves 1821, the grooves 1821 include through holes 1822, and an opening of a through hole 1822 is opposite to a pixel electrode 1811;

[0173] an anode metal layer 1830 , wherein the anode metal layer 1830 includes N sub-anode metal layers 1831 , and the N sub-anode metal layers 1831 are located in the groove 1821 and cover the through hole 1822 ;

[0174] A pixel definition layer 1840 , wherein the pixel definition layer 1840 is located in the N grooves 1821 and covers the edges of the N sub-anode metal layers 1831 in the grooves 1821 ;

[0175] A metal ring layer 1850, the metal ring layer 1850 includes N metal rings 1851, the N metal rings 1851 are located at the outer edges of the N grooves 1821, and the film structure of the metal ring layer 1850 is the same as the film structure of the anode metal layer 1830;

[0176] N evaporated layers 1860 , the N evaporated layers 1860 correspondingly cover the N grooves 1821 , and two adjacent evaporated layers 1860 are isolated by a metal ring layer 1850 ;

[0177] The cathode metal layer 1870 includes N sub-cathode metal layers 1871 . The N sub-cathode metal layers 1871 correspondingly cover N evaporated layers 1860 . Two adjacent sub-cathode metal layers 1871 are connected via a metal ring layer 1850 .

[0178] Since the film structure of the metal ring layer 1850 is the same as that of the anode metal layer 1830, etching and other operations can be performed on the same film structure to prepare the metal ring layer 1850 and the anode metal layer 1830, thereby reducing the complexity of preparing the display panel 1800, thereby helping to reduce manufacturing costs. In addition, the display panel prepared using FMM-based lithography technology is avoided, providing conditions for increasing the overlapping area of ​​the vapor deposition layer and the anode metal layer as much as possible, thereby increasing the pixel aperture ratio and the pixel density of the display panel (which may be an OLED panel).

[0179] In some possible embodiments, the pixel definition layer 1840 may cover the position of the through hole 1822 of the groove 1821. Alternatively, the pixel definition layer 1840 may only cover the edge of the groove 1821, which can further increase the overlapping area of ​​the evaporated layer and the anode metal layer, thereby increasing the aperture ratio and pixel density of the pixel.

[0180] In some possible embodiments, the N evaporated layers 1860 include K colors, K is greater than 1 and less than or equal to N, and the colors of two adjacent evaporated layers 1860 are different.

[0181] In some possible embodiments, reference Fig.18 As shown, the metal ring layer 1850 includes a first protective layer 1852 , a conductive layer 1853 and a second protective layer 1854 . The conductive layer 1853 is located between the first protective layer 1852 and the second protective layer 1854 . The width of the conductive layer 1853 is smaller than the width of the first protective layer 1852 and the second protective layer 1854 .

[0182] In some possible embodiments, reference Fig.18 As shown, the above-mentioned N sub-cathode metal layers 1871 include a first sub-cathode metal layer 1872 and a second sub-cathode metal layer 1873, the first sub-cathode metal layer 1872 is adjacent to the second sub-cathode metal layer 1873, the first part 02 of the first sub-cathode metal layer 1872 fills the first gap 03 between the first protective layer 1852 and the second protective layer 1854, and the second part 04 of the second sub-cathode metal layer 1873 fills the second gap 05 between the first protective layer 1852 and the second protective layer 1854.

[0183] Based on the structural design of the display panel 1800, it can be known that the width of the conductive layer 1853 is designed to be smaller than the width of the first protective layer 1852 and the second protective layer 1854, so that the first sub-cathode metal layer 1872 and the second sub-cathode metal layer 1873 located on both sides of one side of the metal ring 1851 can be more stably connected through the conductive layer 1853 of the metal ring 1851. In addition, during the preparation process, the material of the cathode metal layer 1870 can be filled into the two gaps of each metal ring 1851, which reduces the difficulty of preparation.

[0184] In some possible embodiments, reference Fig.18 As shown, the display panel may further include: an encapsulation layer 1880, wherein the encapsulation layer 1880 covers the cathode metal layer 1870 and the metal ring layer 1850, so as to protect each film layer of the entire display panel.

[0185] In some possible embodiments, the pixel definition layer 1840 includes a light absorbing material, thereby reducing the reflectivity of the display panel and the crosstalk between pixels.

[0186] Fig.19 It is a schematic diagram of another display panel 1800 proposed in an embodiment of the present application.

[0187] In some possible embodiments, the display panel 1800 may further include: a light shielding layer 1890 , which includes a light absorbing material, is embedded in the encapsulation layer 1880 , and covers the pixel definition layer 1840 .

[0188] In some possible embodiments, when the material of the pixel definition layer 1840 includes a light absorbing material, a light shielding layer 1890 may also be provided in the encapsulation layer 1880 .

[0189] The embodiments of the present application also provide a display device, which includes any one of the display panels 1800 provided in the embodiments of the present application.

[0190] The embodiments of the present application also provide a device for preparing a display panel, which includes a module or unit for executing any one of the display panels provided in the embodiments of the present application.

[0191] In addition, an embodiment of the present application also proposes another device for preparing a display panel, which includes a processor and a memory, and the processor and the memory are connected, wherein the memory is used to store program code, and the processor is used to call the program code to execute any one of the display panel preparation methods proposed in the embodiment of the present application.

[0192] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0193] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0194] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0195] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0196] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0197] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0198] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A display panel, characterized in that: include: A backplane, wherein a first surface of the backplane comprises N pixel electrodes, where N is a positive integer; a planar layer, the planar layer being located on the first surface, the planar layer comprising N grooves, the grooves comprising through holes, an opening of one of the through holes being opposite to one of the pixel electrodes; an anode metal layer, the anode metal layer comprising N sub-anode metal layers, the sub-anode metal layers being located in the groove and covering the through hole; a pixel definition layer, the pixel definition layer being located in the N grooves and covering the edge of the sub-anode metal layer in the grooves; A metal ring layer, the metal ring layer comprising N metal rings, the N metal rings being located at outer edges of the N grooves correspondingly, and the film layer structure of the metal ring layer being the same as the film layer structure of the anode metal layer; N evaporated layers, the N evaporated layers correspondingly cover the N grooves, and two adjacent evaporated layers are isolated by the metal ring layer; The cathode metal layer includes N sub-cathode metal layers, the N sub-cathode metal layers correspondingly cover the N evaporated layers, and two adjacent sub-cathode metal layers are connected by the metal ring layer.

2. The display panel according to claim 1, characterized in that: The metal ring layer includes a first protective layer, a conductive layer and a second protective layer. The conductive layer is located between the first protective layer and the second protective layer. The width of the conductive layer is smaller than the width of the first protective layer and the second protective layer.

3. The display panel according to claim 2, characterized in that: The N sub-cathode metal layers include a first sub-cathode metal layer and a second sub-cathode metal layer, the first sub-cathode metal layer is adjacent to the second sub-cathode metal layer, a first portion of the first sub-cathode metal layer fills a first gap between the first protective layer and the second protective layer, and a second portion of the second sub-cathode metal layer fills a second gap between the first protective layer and the second protective layer.

4. The display panel according to any one of claims 1 to 3, characterized in that: The display panel further includes: The encapsulation layer covers the cathode metal layer and the metal ring layer.

5. The display panel according to any one of claims 1 to 4, characterized in that: The pixel definition layer includes a light absorbing material.

6. The display panel according to claim 4 or 5, characterized in that: The display panel further includes: A light shielding layer, wherein the light shielding layer comprises a light absorbing material, the light shielding layer is embedded in the encapsulation layer, and the light shielding layer covers the pixel definition layer.

7. A method for preparing a display panel, characterized in that: The preparation method comprises: Prepare a flat layer, the flat layer is located on the back plate, the flat layer includes N grooves, the grooves include through holes, the through holes are used to expose the pixel electrodes arranged on the back plate, and N is a positive integer; preparing an anode metal layer, wherein the anode metal layer covers the flat layer; Preparing a first photoresist and a second photoresist on the anode metal layer, wherein the first photoresist is located outside the N grooves and surrounds the N grooves, and the second photoresist is located inside the N grooves and at least part of the second photoresist covers the through holes of the N grooves, so as to obtain a first film layer structure; The first film layer structure is etched, and the first photoresist and the second photoresist are peeled off to obtain a second film layer structure, wherein a metal ring layer is retained at the outer edges of the N grooves of the second film layer structure, and the metal ring layer includes N metal rings. The part inside the metal ring is used to prepare a vapor-deposited layer, and among the M metal rings arranged along the first direction, the colors of the vapor-deposited layers in two adjacent metal rings are different.

8. The preparation method according to claim 7, characterized in that: The metal ring layer includes a first protective layer, a first conductive layer and a second protective layer, the first conductive layer is located between the first protective layer and the second protective layer, and the preparation method further includes: The first conductive layer is etched to obtain a second conductive layer, wherein the width of the second conductive layer is smaller than the first protective layer and the second protective layer of the metal ring layer.

9. The preparation method according to claim 8, characterized in that: The preparation method further comprises: A pixel definition layer is prepared, wherein the pixel definition layer surrounds the portion of the anode metal layer retained in each of the grooves and covers the edge of the portion of the anode metal layer to obtain a third film layer structure.

10. The preparation method according to claim 9, characterized in that: The preparation method further comprises: A first evaporated layer is evaporated on the first groove set of the third film layer structure to obtain a fourth film layer structure, the first groove set includes J grooves, the J is less than the N, and the first evaporated layer is a first color.

11. The preparation method according to claim 10, characterized in that: The step of evaporating a first evaporation layer on the first groove set of the third film layer structure comprises: Vapor-depositing a first-process vapor-deposited layer on a first surface of the third film layer structure, wherein the first-process vapor-deposited layer is the first color; preparing a third photoresist, wherein the third photoresist covers the first groove set; Etching the third film layer structure after the third photoresist is set, removing the portion of the first process evaporated layer outside the coverage of the third photoresist, so as to obtain the first evaporated layer; The third photoresist is stripped off.

12. The preparation method according to claim 11, characterized in that: Before preparing the third photoresist, the preparation method further comprises: A first cathode metal layer is prepared, wherein the first cathode metal layer covers the first process evaporated layer, and portions of the first cathode metal layer corresponding to two adjacent grooves are connected through the metal ring layer.

13. The preparation method according to claim 12, characterized in that: The preparation method further comprises: preparing a first encapsulation layer, wherein the first encapsulation layer covers the first cathode metal layer; The preparing the third photoresist includes: preparing the third photoresist on the first encapsulation layer.

14. The preparation method according to any one of claims 10 to 13, characterized in that: The preparation method further comprises: A second evaporated layer is evaporated on the second groove set of the fourth film layer structure to obtain a fifth film layer structure, the second groove set includes L grooves, the L is less than the N, and the second evaporated layer is a second color.

15. The preparation method according to claim 14, characterized in that: The step of evaporating a second evaporation layer on the second groove set of the fourth film layer structure comprises: Vapor-depositing a second-process vapor-deposited layer on the second surface of the fourth film layer structure, wherein the second-process vapor-deposited layer is the second color; preparing a second cathode metal layer, wherein the second cathode metal layer covers the second process evaporated layer, and portions of the second cathode metal layer corresponding to two adjacent grooves are connected by the metal ring layer; preparing a second encapsulation layer, wherein the second encapsulation layer covers the second cathode metal layer; Preparing a fourth photoresist on the second encapsulation layer, wherein the fourth photoresist covers the second groove set; Etching the fourth film layer structure after the fourth photoresist is set, removing the part of the second process evaporated layer outside the coverage of the fourth photoresist, so as to obtain the second evaporated layer; The fourth photoresist is stripped off.

16. The preparation method according to any one of claims 10 to 15, characterized in that: The pixel definition layer includes a light absorbing material.

17. The preparation method according to any one of claims 10 to 16, characterized in that: The preparation method further comprises: A light shielding layer is prepared, wherein the light shielding layer comprises a light absorbing material and covers the pixel definition layer.

18. The preparation method according to any one of claims 15 to 17, characterized in that: The preparation method further comprises: A panel encapsulation layer is prepared, wherein the panel encapsulation layer covers the first encapsulation layer and the second encapsulation layer.

19. A display device, characterized in that: The invention comprises the display panel as claimed in any one of claims 1 to 6.

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