Organic electroluminescent materials and devices

Abstract

The invention relates to organic electroluminescent materials and devices. There is provided a compound comprising a first ligand LA of formula I # imgabs0 #. In the compound, moiety B is a monocyclic or polycyclic fused ring system; each of X1 to X6 is C or N; k is a direct bond or a linking group; at least one RA comprises a silyl group or a germanyl group; any RA, which is silyl or germanyl, does not form a 5-membered ring with the other RA; each substituent is hydrogen or a universal substituent as defined herein; the first ligand LA is coordinated with the metal M through a dotted line. Formulations, OLEDs, and consumer products containing the compounds are also provided.

Description

[0001] CROSS REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority under 35 USC §119(e) to U.S. Provisional Application No. 63 / 591,659, filed on October 19, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates generally to organic or metal coordination compounds and formulations and various uses thereof, including as emitters, sensitizers, charge transporters, or exciton transporters in devices such as organic light emitting diodes and related electronic devices and consumer products. Background Art

[0004] For various reasons, optoelectronic devices utilizing organic materials are becoming increasingly desirable. Many materials used to manufacture the devices are relatively inexpensive, so organic optoelectronic devices have the potential for cost advantages over inorganic devices. In addition, the inherent properties of organic materials (e.g., their flexibility) can make them very suitable for specific applications, such as manufacturing on flexible substrates. Examples of organic optoelectronic devices include organic light emitting diodes / devices (OLEDs), organic phototransistors, organic photovoltaic cells, and organic photodetectors. For OLEDs, organic materials can have performance advantages over conventional materials.

[0005] OLEDs utilize organic thin films that emit light when a voltage is applied across the device.OLED Applications in Such As Flat Panel Displays, Illumination, and Backlighting OLEDs are becoming an increasingly attractive technology in applications such as displays, illumination, and backlighting.

[0006] One application of phosphorescent emitting molecules is full-color displays. Industry standards for such displays require pixels suitable for emitting specific colors (called "saturated" colors). Specifically, these standards require saturated red, green, and blue pixels. Alternatively, OLEDs can be designed to emit white light. In conventional liquid crystal displays, an absorption filter is used to filter the emission from a white backlight to produce red, green, and blue emissions. The same technology can also be used for OLEDs. White OLEDs can be single-emission layer (EML) devices or stacked structures. Color can be measured using CIE coordinates well known in the art. Summary of the invention

[0007] In one aspect, the present disclosure provides a compound comprising a first ligand L of formula I A , in:

[0008] L A coordinated to the metal M by the indicated dashed line;

[0009] The metal M has an atomic mass of at least 40 and can be coordinated with other ligands;

[0010] The moiety B is a monocyclic or polycyclic fused ring system, wherein each ring in the monocyclic or polycyclic fused ring system is independently a 5-membered or 6-membered carbocyclic or heterocyclic ring;

[0011] X 1 To X 6 Each of is independently C or N;

[0012] K is selected from the group consisting of: direct key, O, S, N (R α )、P(R α )、B(R α )、C(R α )(R β ) and Si(R α )(R β );

[0013] At least one R A The substituent comprises a silane group or a germanium group;

[0014] Z 1 and Z 2 Each of which is independently selected from the group consisting of O, S and NR;

[0015] Any R being a silyl group or a germanyl group A Not with another R A Forming a 5-membered ring;

[0016] R A , R B and R C Each of represents mono-substitution to the maximum permissible substitution or no substitution;

[0017] Each R α , R β , R A , R B and R C are independently hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thiol, sulfinyl, sulfonyl, phosphino, selenanyl, and combinations thereof;

[0018] L A can be joined with other ligands to form tridentate, tetradentate, pentadentate, or hexadentate ligands; and

[0019] Any two substituents may be joined or fused to form a ring.

[0020] In another aspect, the present disclosure provides a formulation comprising a first ligand L comprising Formula I as described herein A of compounds.

[0021] In another aspect, the present disclosure provides an OLED having an organic layer comprising a first ligand L comprising Formula I described herein. A of compounds.

[0022] In another aspect, the present disclosure provides a consumer product comprising an OLED having an organic layer comprising a first ligand L comprising Formula I described herein. A of compounds. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 An organic light emitting device is shown.

[0024] Figure 2 An inverted organic light-emitting device without a separate electron transport layer is demonstrated. DETAILED DESCRIPTION

[0025] A. Terminology

[0026] Unless otherwise specified, the following terms used herein are defined as follows:

[0027] As used herein, "top" means farthest from the substrate, while "bottom" means closest to the substrate. Where a first layer is described as being "disposed above" a second layer, the first layer is disposed farther from the substrate. Unless it is specified that the first layer is "in contact with" the second layer, there may be other layers between the first and second layers. For example, a cathode may be described as being "disposed above" an anode even though various organic layers are present between the cathode and the anode.

[0028] As used herein, "solution processable" means capable of being dissolved, dispersed or transported in and / or deposited from a liquid medium in the form of a solution or suspension.

[0029] As used herein, and as will be generally understood by one skilled in the art, a first "Highest Occupied Molecular Orbital" (HOMO) or "Lowest Unoccupied Molecular Orbital" (LUMO) energy level is "greater than" or "higher than" a second HOMO or LUMO energy level if the first energy level is closer to the vacuum energy level. Since the ionization potential (IP) is measured as a negative energy relative to the vacuum energy level, a higher HOMO energy level corresponds to an IP with a smaller absolute value (a less negative IP). Similarly, a higher LUMO energy level corresponds to an electron affinity (EA) with a smaller absolute value (a less negative EA). On a conventional energy level diagram with the vacuum energy level at the top, the LUMO energy level of a material is higher than the HOMO energy level of the same material. A "higher" HOMO or LUMO energy level appears closer to the top of this diagram than a "lower" HOMO or LUMO energy level.

[0030] As used herein, and as one skilled in the art would generally understand, a first work function is "greater than" or "higher than" a second work function if the first work function has a higher absolute value. Because work functions are typically measured as negative numbers relative to the vacuum level, this means that a "higher" work function is more negative. On a conventional energy level diagram with the vacuum level at the top, a "higher" work function is illustrated as being farther away from the vacuum level in a downward direction. Thus, the definition of HOMO and LUMO energy levels follows different rules than work functions.

[0031] Layers, materials, regions, and devices may be described herein with reference to the color of light they emit. Generally, as used herein, an emissive region described as producing a particular color of light may include one or more emissive layers disposed above each other in a stacked manner.

[0032] As used herein, a "NIR," "red," "green," "blue," or "yellow" layer, material, region, or device refers to a layer, material, region, or device that emits light in a wavelength range of about 700-1500 nm, 580-700 nm, 500-600 nm, 400-500 nm, or 540-600 nm, respectively, or a layer, material, region, or device having the highest emission spectrum peak in the corresponding wavelength region. In some arrangements, separate regions, layers, materials, or devices may provide separate "deep blue" and "light blue" emissions. As used herein, a "deep blue" emission component refers to an emission having a peak emission wavelength that is at least about 4 nm less than the peak emission wavelength of a "light blue" emission component. Typically, the peak emission wavelength of the "light blue" emission component is in the range of about 465-500 nm, and the peak emission wavelength of the "deep blue" emission component is in the range of about 400-470 nm, but these ranges may vary for some configurations.

[0033] In some arrangements, a color-changing layer is provided that converts, modifies or changes the color of light emitted by another layer to an emission having a different wavelength. This color-changing layer can be configured to shift the wavelength of light emitted by another layer by a defined amount, as measured by the difference between the wavelength of the emitted light and the wavelength of the resulting light. In general, there are two types of color-changing layers: color filters that modify the spectrum by removing light of non-desired wavelengths, and color-changing layers that convert higher energy photons into lower energy. For example, there may be a "red" filter to filter the input light to remove light with wavelengths outside the range of about 580-700nm. A component of "color" refers to a component that produces or otherwise emits light having a specific color as previously described when activated or used. For example, a "first emission region of a first color" and a "second emission region of a second color different from the first color" describe two emission regions that emit two different colors as previously described when activated within the device.

[0034] As used herein, emissive materials, layers, and regions may be distinguished from each other and from other structures based on the light that the material, layer, or region initially produces as opposed to the light that the same or different structure ultimately emits. Initial light generation is typically the result of a change in energy levels that results in photon emission. For example, an organic emissive material may initially produce blue light, which may be converted to red or green light by a color filter, quantum dots, or other structure, such that the complete emissive stack or sub-pixel emits red or green light. In this case, the initial emissive material, region, or layer may be referred to as the "blue" component, even if the sub-pixel is the "red" or "green" component.

[0035] In some cases, it may be preferred to describe the color of a component, such as the color of an emitting region, a sub-pixel, a color-changing layer, etc., in terms of 1931 CIE coordinates. For example, a yellow emitting material may have multiple peak emission wavelengths, one in or near the edge of a "green" region, and one in or near the edge of a "red" region, as previously described. Thus, as used herein, each color term also corresponds to a shape in the 1931 CIE coordinate color space. Shapes in the 1931 CIE color space are constructed by tracing the trajectory between two color points and any other interior points. For example, the interior shape parameters for red, green, blue, and yellow may be defined as follows:

[0036]

[0037]

[0038] The terms "halo," "halogen," and "halo" are used interchangeably and refer to fluorine, chlorine, bromine, and iodine.

[0039] The term "acyl" refers to a substituted carbonyl (-C(O)-R s ).

[0040] The term "ester" refers to a substituted oxycarbonyl (-OC(O)-R s OR-C(O)-OR s ) group.

[0041] The term "ether" refers to -OR s Group.

[0042] The terms "thio" or "thioether" are used interchangeably and refer to -SR s Group.

[0043] The term "selenoalkyl" refers to -SeR s Group.

[0044] The term "sulfinyl" refers to -S(O)-R s Group.

[0045] The term "sulfonyl" refers to -SO2-R s Group.

[0046] The term "phosphino" refers to a group containing at least one phosphorus atom bonded to a related structure. Common examples of phosphino groups include, but are not limited to, -P(R s )2 group or -PO(R s )2 groups, wherein each R s Can be the same or different.

[0047] The term "silyl group" refers to a group containing at least one silicon atom bonded to the structure of interest. Common examples of silyl groups include, but are not limited to, -Si(R s )3 groups, wherein each R s Can be the same or different.

[0048] The term "germanyl" refers to a group containing at least one germanium atom bonded to an associated structure. Common examples of germanyl groups include, but are not limited to, -Ge(R s )3 groups, wherein each R s Can be the same or different.

[0049] The term "boryl" refers to a group containing at least one boron atom bonded to the structure of interest. Common examples of boryl groups include, but are not limited to, -B(R s )2 group or its Lewis adduct -B(R s )3 groups, wherein R s Can be the same or different.

[0050] In each of the above, R s It may be hydrogen or a substituent selected from the group consisting of general substituents defined in this application. s is selected from the group consisting of: deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, and combinations thereof. More preferably, R s Selected from the group consisting of alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof.

[0051] The term "alkyl" refers to and includes both straight and branched chain alkyl groups having alkyl carbon atoms bonded to the relevant structure. Preferred alkyl groups are those containing one to fifteen carbon atoms, preferably one to nine carbon atoms, and include methyl, ethyl, propyl, 1-methylethyl, butyl, 1-methylpropyl, 2-methylpropyl, pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1,1-dimethylpropyl, 1,2-dimethylpropyl, 2,2-dimethylpropyl, and the like. In addition, the alkyl group may be further substituted.

[0052] The term "cycloalkyl" refers to and includes monocyclic, polycyclic and spirocycloalkyl groups having cycloalkyl carbon atoms bonded to the related structure. Preferred cycloalkyl groups are cycloalkyl groups containing 3 to 12 ring carbon atoms and include cyclopropyl, cyclopentyl, cyclohexyl, bicyclo[3.1.1]heptyl, spiro[4.5]decyl, spiro[5.5]undecyl, adamantyl, and the like. In addition, the cycloalkyl group may be further substituted.

[0053] The term "heteroalkyl" or "heterocycloalkyl" refers to an alkyl or cycloalkyl group having at least one carbon atom replaced by a heteroatom, respectively. Optionally, the at least one heteroatom is selected from O, S, N, P, B, Si and Se, preferably O, S or N. In addition, the heteroalkyl or heterocycloalkyl group may be further substituted.

[0054] The term "alkenyl" refers to and includes both straight and branched olefin groups.Alkenyl is essentially an alkyl group including at least one carbon-carbon double bond in the alkyl chain, wherein one carbon atom is from a carbon-carbon double bond bonded to a related structure.Cycloalkenyl is essentially a cycloalkyl group including at least one carbon-carbon double bond in a cycloalkyl ring.As used herein, the term "heteroalkenyl" refers to an alkenyl group having at least one carbon atom replaced by a heteroatom.Optionally, at least one heteroatom is selected from O, S, N, P, B, Si, Ge and Se, preferably O, S or N.Preferred alkenyl, cycloalkenyl or heteroalkenyl groups are those groups containing two to fifteen carbon atoms.In addition, alkenyl, cycloalkenyl or heteroalkenyl groups may be further substituted.

[0055] The term "alkynyl" refers to and includes both straight and branched alkyne groups. Alkynyl groups are essentially alkyl groups that include at least one carbon-carbon triple bond in the alkyl chain, wherein one carbon atom is from a carbon-carbon triple bond that is bonded to a related structure. Preferred alkynyl groups are alkynyl groups containing two to fifteen carbon atoms. In addition, alkynyl groups may be further substituted.

[0056] The terms "aralkyl" or "arylalkyl" are used interchangeably and refer to an alkyl group substituted with an aryl group bonded to an alkyl carbon atom of the associated structure. Additionally, the aralkyl group may be further substituted.

[0057] The term "heterocyclic group" refers to and includes aromatic and non-aromatic cyclic groups containing at least one heteroatom. Optionally, at least one heteroatom is selected from O, S, Se, N, P, B, Si, Ge and Se, preferably O, S, N or B. Heteroaromatic cyclic groups can be used interchangeably with heteroaryl. Preferred non-aromatic heterocyclic groups are non-aromatic heterocyclic groups containing 3 to 10 ring atoms, preferably non-aromatic heterocyclic groups containing 3 to 7 ring atoms including at least one heteroatom, and include cyclic amines, such as morpholinyl, piperidinyl, pyrrolidinyl, etc., and cyclic ethers / thioethers, such as tetrahydrofuran, tetrahydropyran, tetrahydrothiophene, etc. In addition, the heterocyclic group can be further substituted or fused.

[0058] The term "aryl" refers to and includes both monocyclic and polycyclic aromatic hydrocarbon groups. Polycyclics may have two or more rings in which two carbons are common to two adjacent rings (the rings are "fused"). Preferred aryl groups are those containing six to thirty carbon atoms, preferably six to twenty-four carbon atoms, six to eighteen carbon atoms, and more preferably six to twelve carbon atoms. Particularly preferred are aryl groups having six carbons, ten carbons, twelve carbons, fourteen carbons, or eighteen carbons. Suitable aryl groups include phenyl, biphenyl, terphenyl, triphenylene, tetraphenylene, naphthalene, anthracene, phenanthrene, phenanthrene, pyrene, Perylene and azulene, preferably phenyl, biphenyl, terphenyl, triphenylene and naphthalene. In addition, the aryl group may be further substituted or fused, such as but not limited to fluorene.

[0059] The term "heteroaryl" refers to and includes both monocyclic aromatic groups and polycyclic aromatic ring systems having at least one heteroatom. Heteroatoms include, but are not limited to, O, S, Se, N, P, B, Si, Ge, and Se. In many cases, O, S, N, or B are preferred heteroatoms. Monocyclic heteroaromatic systems are preferably monocyclic rings having 5 or 6 ring atoms, and the rings may have one to six heteroatoms. Polycyclic heterocyclic ring systems may have two or more aromatic rings, wherein two atoms are common to two adjacent rings (the rings are "fused"), wherein at least one of the rings is a heteroaryl. Polycyclic heteroaromatic ring systems may have one to six heteroatoms in each ring of the polycyclic aromatic ring system. Preferred heteroaryls are heteroaryls containing three to thirty carbon atoms, preferably three to twenty-four carbon atoms, three to eighteen carbon atoms, and more preferably three to twelve carbon atoms. Suitable heteroaryl groups include dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridyl indole, pyrrolobipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, Indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuranopyridine, furanodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, selenophenodipyridine, azaborane, borazine, 5λ 2 ,9λ 2 -diaza-13b-borazinnaphtho[2,3,4-de]anthracene, 5λ 2-benzo[d]benzo[4,5]imidazo[3,2-a]imidazole and 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene; preferably dibenzothiophene, dibenzofuran, dibenzoselenophene, carbazole, indolocarbazole, imidazole, pyridine, triazine, benzimidazole, 5λ 2 ,9λ 2 -diaza-13b-borazinnaphtho[2,3,4-de]anthracene, 5λ 2 -benzo[d]benzo[4,5]imidazo[3,2-a]imidazole and 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene. In addition, the heteroaryl group may be further substituted or fused.

[0060] Among the aryl and heteroaryl groups listed above, triphenylene, naphthalene, anthracene, dibenzothiophene, dibenzofuran, dibenzoselenophene, carbazole, indolocarbazole, imidazole, pyridine, pyrazine, pyrimidine, triazine, benzimidazole, 5λ 2 ,9λ 2 -diaza-13b-borazinnaphtho[2,3,4-de]anthracene, 5λ 2 -benzo[d]benzo[4,5]imidazo[3,2-a]imidazole, 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene groups, and the corresponding aza analogs of each are of particular interest.

[0061] In many cases, the universal substituents are selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thio, selenanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof.

[0062] In some cases, preferred universal substituents are selected from the group consisting of deuterium, fluorine, alkyl, cycloalkyl, heteroalkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, aryl, heteroaryl, nitrile, isonitrile, thio, and combinations thereof.

[0063] In some cases, more preferred universal substituents are selected from the group consisting of deuterium, fluorine, alkyl, cycloalkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, aryl, heteroaryl, nitrile, thio, and combinations thereof.

[0064] In some cases, even more preferred universal substituents are selected from the group consisting of deuterium, fluorine, alkyl, cycloalkyl, silane, aryl, heteroaryl, nitrile, and combinations thereof.

[0065] In still other cases, the most preferred universal substituents are selected from the group consisting of deuterium, alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof.

[0066] The terms "substituted" and "substituted" refer to the bonding of substituents other than H to the relevant positions, such as carbon or nitrogen. For example, when R 1 When it represents a single substitution, one R 1 must not be H (i.e., substituted). Similarly, when R 1 When it indicates disubstituted, the two R 1 must not be H. Similarly, when R 1 When it indicates zero or no substitution, R 1 For example, it can be hydrogen with all available valences of the ring atoms, such as the carbon atoms of benzene and the nitrogen atoms in pyrrole, or simply none for ring atoms with fully saturated valences, such as the nitrogen atoms in pyridine. The maximum number of substitutions possible in the ring structure will depend on the total number of available valences in the ring atoms.

[0067] As used herein, "combinations thereof" means that one or more members of the applicable list are combined to form a known or chemically stable arrangement that a person of ordinary skill in the art can envision from the applicable list. For example, alkyl and deuterium can be combined to form partially or fully deuterated alkyl; halogen and alkyl can be combined to form haloalkyl substituents; and halogen, alkyl and aryl can be combined to form haloaralkyl. In one example, the term substitution includes a combination of two to four of the listed groups. In another example, the term substitution includes a combination of two to three groups. In yet another example, the term substitution includes a combination of two groups. Preferred combinations of substituents are combinations containing up to fifty atoms that are not hydrogen or deuterium, or combinations including up to forty atoms that are not hydrogen or deuterium, or combinations including up to thirty atoms that are not hydrogen or deuterium. In many cases, preferred combinations of substituents will include up to twenty atoms that are not hydrogen or deuterium.

[0068] The "aza" designation in the fragments described herein, i.e., aza-dibenzofuran, aza-dibenzothiophene, etc., means that one or more of the CH groups in the corresponding aromatic ring can be replaced by a nitrogen atom, for example and without any limitation, azatriphenylene encompasses dibenzo[f,h]quinoxaline and dibenzo[f,h]quinoline. Other nitrogen analogs of the aza-derivatives described above can be readily envisioned by one of ordinary skill in the art, and all such analogs are intended to be covered by the term as set forth herein.

[0069] As used herein, "deuterium" refers to an isotope of hydrogen. Deuterated compounds can be easily prepared using methods known in the art. For example, U.S. Patent No. 8,557,400, Patent Publication No. WO 2006 / 095951 and U.S. Patent Application Publication No. US2011 / 0037057 (which are incorporated herein by reference in their entirety) describe the preparation of deuterium-substituted organometallic complexes. Further reference is made to Ming Yan et al., Tetrahedron 2015, 71, 1425-30 and Atzrodt et al., German Applied Chemistry (Angew. Chem. Int. Ed. (Review) 2007, 46, 7744-65 (which are incorporated by reference in their entirety) respectively describe the deuteration of methylene hydrogen in benzylamine and the effective way to replace aromatic ring hydrogen with deuterium.

[0070] As used herein, any specific listed substituent, such as but not limited to methyl, phenyl, pyridyl, etc., includes its non-deuterated, partially deuterated, and fully deuterated forms. Similarly, substituents such as but not limited to alkyl, aryl, cycloalkyl, heteroaryl, etc. also include their non-deuterated, partially deuterated, and fully deuterated forms. Unless otherwise specified, atoms in a chemical structure that do not have a valence fully filled by H or D should be considered to include their non-deuterated, partially deuterated, and fully deuterated forms. For example, the chemical structure It is meant to include C6H6, C6D6, C6H3D3 and any other partially deuterated variants thereof. Some common basic partially or fully deuterated groups include, but are not limited to, CD3, CD2C(CH3)3, C(CD3)3 and C6D5.

[0071] It should be understood that when a molecular fragment is described as a substituent or otherwise attached to another part, its name can be written as if it is a fragment (e.g., phenyl, phenylene, naphthyl, dibenzofuranyl) or as if it is a whole molecule (e.g., benzene, naphthalene, dibenzofuran). As used herein, these different ways of naming substituents or attaching fragments are considered equivalent.

[0072] In some cases, a pair of substituents in a molecule can be optionally joined or fused to form a ring. Preferred rings are five- to nine-membered carbocyclic or heterocyclic rings, including two cases in which the portion of the ring formed by the pair of substituents is saturated and the portion of the ring formed by the pair of substituents is unsaturated. In other cases, a pair of adjacent substituents can be optionally joined or fused to form a ring. As used herein, "adjacent" means that the two substituents involved can be adjacent to each other on the same ring, or on two adjacent rings with two closest available substitutable positions (such as 2, 2' positions in biphenyl or 1, 8 positions in naphthalene).

[0073] B. Compounds of the Disclosure

[0074] The present disclosure relates to complexes with unique ligand structures and substitution characteristics that are expected to be important for improving material properties including emission color, emission spectral line shape, alignment in emissive film layers, and OLED performance when used as emissive dopants.

[0075] In one aspect, the present disclosure provides a compound comprising a first ligand L of formula I A ,

[0076] in:

[0077] L A coordinated to the metal M by the indicated dashed line;

[0078] The metal M has an atomic mass of at least 40 and can be coordinated with other ligands;

[0079] The moiety B is a monocyclic or polycyclic fused ring system, wherein each ring in the monocyclic or polycyclic fused ring system is independently a 5-membered or 6-membered carbocyclic or heterocyclic ring;

[0080] X 1 To X 6 Each of is independently C or N;

[0081] K is selected from the group consisting of: direct key, O, S, N (R α )、P(R α )、B(R α )、C(R α )(R β ) and Si(R α )(R β );

[0082] At least one R A The substituent comprises a silane group or a germanium group;

[0083] Z 1 and Z 2 Each of which is independently selected from the group consisting of O, S and NR;

[0084] Any R being a silyl group or a germanyl group A Not with another R A Forming a 5-membered ring;

[0085] R A , R B and R C Each of represents mono-substitution to the maximum permissible substitution or no substitution;

[0086] Each Ra1, Rb1, Rc1, Rd1, R α, R β , R A , R B and R C is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein;

[0087] L A can be joined with other ligands to form tridentate, tetradentate, pentadentate, or hexadentate ligands; and

[0088] Any two substituents may be joined or fused to form a ring.

[0089] In some embodiments, if an R A The substituent comprises a silane group and the metal M is Ir, then the compound comprises at least one ligand L selected from the group consisting of C : Formula IIa Formula IIb Formula IIc Formula IId wherein each of Ra1, Rb1, Rc1 and Rd1 is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein.

[0090] In some embodiments, the compound is not

[0091]

[0092] In some embodiments, at least one R B In some embodiments, at least one R B is a silane group or a germanium group. In some embodiments, at least one R C In some embodiments, at least one R C is a silane group or a germanium group. In some embodiments, 5 R C In some embodiments, the 5 R C is a silane group or a germanium group. In some embodiments, 6 R C In some embodiments, the 6 R C It is a silane group or a germanium group.

[0093] In some embodiments of Formula I, at least one of R, R', R A , R B or R Cis partially or fully deuterated. In some embodiments, at least one R A is partially or fully deuterated. In some embodiments, at least one R B is partially or fully deuterated. In some embodiments, at least one R C In some embodiments, at least one R or R' is partially or fully deuterated.

[0094] In some embodiments, each of Ra1, Rb1, Rc1, Rd1, R α , R β , R A , R B and R C is independently hydrogen or a substituent selected from the group consisting of preferred general substituents defined herein. α , R β , R A , R B and R C is independently hydrogen or a substituent selected from the group consisting of the more preferred general substituents defined herein. α , R β , R A , R B and R C is independently hydrogen or a substituent selected from the group consisting of the most preferred general substituents defined herein.

[0095] In some embodiments, moiety B is selected from the group consisting of benzene, pyridine, pyrimidine, pyridazine, pyrazine, triazine, imidazole, pyrazole, pyrrole, oxazole, furan, thiophene, thiazole, triazole, naphthalene, quinoline, isoquinoline, quinazoline, benzofuran, aza-benzofuran, benzoxazole, aza-benzoxazole, benzothiophene, aza-benzothiophene, benzothiazole, aza-benzothiazole, benzoselenophene, aza-benzoselenophene, indene, aza-indene, indole, aza-indole, benzimidazole, aza-benzimidazole, carbazole, aza-carbazole, dibenzofuran, aza-dibenzofuran, dibenzothiophene, aza-dibenzothiophene, quinoxaline, phthalazine, phenanthrene, aza-phenanthrene, anthracene, aza-anthracene, phenanthridine, fluorene, and aza-fluorene. In some embodiments, aza variants include one N on the benzo ring.

[0096] In some embodiments, moiety B is a monocyclic ring. In some embodiments, moiety B is selected from the group consisting of benzene, pyridine, pyrimidine, pyridazine, pyrazine, triazine, imidazole, pyrazole, pyrrole, oxazole, furan, thiophene, thiazole and triazole. In some embodiments, moiety B is benzene.

[0097] In some embodiments, moiety B is a polycyclic fused ring system. In some embodiments, moiety B is selected from the group consisting of naphthalene, quinoline, isoquinoline, quinazoline, benzofuran, aza-benzofuran, benzoxazole, aza-benzoxazole, benzothiophene, aza-benzothiophene, benzothiazole, aza-benzothiazole, benzoselenophene, aza-benzoselenophene, indene, aza-indene, indole, aza-indole, benzimidazole, aza-benzimidazole, carbazole, aza-carbazole, dibenzofuran, aza-dibenzofuran, dibenzothiophene, aza-dibenzothiophene, quinoxaline, phthalazine, phenanthrene, aza-phenanthrene, anthracene, aza-anthracene, phenanthridine, fluorene, and aza-fluorene. In some embodiments, moiety B is naphthalene.

[0098] In some embodiments, the metal M is selected from the group consisting of Ir, Rh, Re, Ru, Os, Pt, Pd, Ag, Au, and Cu. In some embodiments, the metal M is Ir. In some embodiments, the metal M is Pt or Pd. In some embodiments, the metal M is Pt. In some embodiments, the metal M is Pd.

[0099] In some embodiments, X 1 To X 6 Each of them is C.

[0100] In some embodiments, X 1 To X 4 Each of them is C.

[0101] In some embodiments, X 1 To X 4 At least one of is N. In some embodiments, X 1 To X 4 Exactly one of them is N.

[0102] In some embodiments, X 5 and X 6 All are N.

[0103] In some embodiments, X 5 or X 6 At least one of is N. In some embodiments, X 5 or X 6 Exactly one of them is N.

[0104] In some embodiments, K is a direct bond.

[0105] In some embodiments, K is O or S. In some embodiments, K is O. In some embodiments, K is S. In some embodiments, K is N(R α )、P(R α ) or B(R αIn some embodiments, K is C(R α )(R β ) or Si(R α )(R β ).

[0106] In some embodiments, the compound comprises at least one ligand L coordinated to the metal M. C , where L C Selected from the group consisting of: Formula IIa Formula IIb Formula IIc Formula IId

[0107] In some embodiments, the compound comprises a compound having Formula IIa At least one ligand L of the structure C In some embodiments, at least one of Ra1, Rb1, or Rc1 comprises at least one C. In some embodiments, at least two of Ra1, Rb1, or Rc1 comprise at least one C. In some embodiments, each of Ra1, Rb1, and Rc1 comprises at least one C.

[0108] In some embodiments of Formula IIa, Z 1 and Z 2 All O.

[0109] In some embodiments of Formula IIa, Z 1 or Z 2 At least one of is S or NR. In some such embodiments, Z 1 or Z 2 The other one is O.

[0110] In some embodiments of Formula IIa, Z 1 and Z 2 Each of is independently S or NR.

[0111] In some embodiments, the compound comprises a compound having Formula IIb At least one ligand L of the structure C In some embodiments, at least one of Ra1, Rb1, or Rc1 comprises at least one C. In some embodiments, at least two of Ra1, Rb1, or Rc1 comprise at least one C. In some embodiments, each of Ra1, Rb1, and Rc1 comprises at least one C.

[0112] In some embodiments, the compound comprises a compound having Formula IIc At least one ligand L of the structure CIn some embodiments, at least one of Ra1, Rb1, Rc1, or Rd1 comprises at least one C. In some embodiments, at least two of Ra1, Rb1, Rc1, or Rd1 comprise at least one C.

[0113] In some embodiments, the compound comprises a compound having Formula IId At least one ligand L of the structure C In some embodiments, at least one of Ra1, Rb1, Rc1, or Rd1 comprises at least one C. In some embodiments, at least two of Ra1, Rb1, Rc1, or Rd1 comprise at least one C.

[0114] In some embodiments, at least one R A is a germanyl group or a silyl group. In some embodiments, at least one R A In some embodiments, at least one R A It is a silane group.

[0115] In some embodiments, at least one R A The Ge or Si atom is not directly bonded to ring A. In some embodiments, at least one R A The Ge atom is not directly bonded to ring A. In some embodiments, at least one R A A silyl group is included, and the Si atom is not directly bonded to the ring A.

[0116] In some embodiments, X 1 R A In some embodiments, X 1 R A In some embodiments, X 1 R A Contains germanium groups.

[0117] In some embodiments, X 1 R A is a silane group or a germanium group. In some embodiments, X 1 R A In some embodiments, X 1 R A is a germyl group. In some such embodiments, the silyl group or the germyl group may be selected from List AA as defined herein. In some embodiments, the silyl group or the germyl group may be selected from List AB as defined herein.

[0118] In some embodiments, X 2 R A In some embodiments, X2 R A In some embodiments, X 2 R A Contains germanium groups.

[0119] In some embodiments, X 2 R A is a silane group or a germanium group. In some embodiments, X 2 R A In some embodiments, X 2 R A is a germyl group. In some such embodiments, the silyl group or the germyl group may be selected from List AA as defined herein. In some embodiments, the silyl group or the germyl group may be selected from List AB as defined herein.

[0120] In some embodiments, X 3 R A In some embodiments, X 3 R A In some embodiments, X 3 R A Contains germanium groups.

[0121] In some embodiments, X 3 R A is a silane group or a germanium group. In some embodiments, X 3 R A In some embodiments, X 3 R A In some embodiments, when R A Contains a silane group or a germanium group and is connected to X 3 When R A Not connected to X 3 In some embodiments, when R A Not connected to X 3 When , it is not a silane group or a germanium group.

[0122] In some embodiments, X 4 R A In some embodiments, X 4 R A In some embodiments, X 4 R A Contains germanium groups.

[0123] In some embodiments, X 4 R A is a silane group or a germanium group. In some embodiments, X 4 R A In some embodiments, X 4 R A is a germyl group. In some such embodiments, the silyl group or the germyl group may be selected from List AA as defined herein. In some embodiments, the silyl group or the germyl group may be selected from List AB as defined herein.

[0124] In some embodiments, at least one R A is a germanium or silane group selected from the group consisting of the structures in List 1 below: SiMe3, SiEt3, Si( i Pr)3、Si( t Bu)3, SiPh3, Si(CD3)3, GeMe3, GeEt3, Ge( i Pr)3、Ge( t Bu)3, GePh3, Ge(CD3)3,

[0127] In some embodiments, a silane group refers to -Si(R s )3 groups, wherein each R s can be the same or different, and the germanyl group refers to –Ge(R s )3 groups, wherein each R s can be the same or different. In some of these embodiments, R s R may be hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, and combinations thereof. s is independently selected from the group consisting of: alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof. s Independently selected from methyl, ethyl, tert-butyl, cyclohexyl, phenyl, 4-methylphenyl and 3,5-dimethylphenyl.

[0128] In some embodiments, exactly one R A In some embodiments, the remaining R A Each of the substituents is H.

[0129] In some embodiments, at least one RA In some embodiments, at least one R A is a substituent selected from the group consisting of alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof.

[0130] In some embodiments, the silane group may have the formula -SiR 1g R 2g R 3g In some embodiments, the germanyl group may have the formula -GeR 1g R 2g R 3g , where R 1g , R 2g and R 3g Each of is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein.

[0131] In some embodiments, R 1g , R 2g and R 3g In some embodiments, at least one of R 1g , R 2g and R 3g In some embodiments, at least one of R 1g , R 2g and R 3g In some embodiments, at least one of R 1g , R 2g and R 3g In some embodiments, each of R 1g , R 2g and R 3g Each of is an alkyl group, an aryl group or a combination thereof.

[0132] In some embodiments, R 1g , R 2g and R 3g At least two of them are not hydrogen or deuterium.

[0133] In some embodiments, R 1g , R 2g and R 3g In some embodiments, the ring is saturated. In some embodiments, the ring is unsaturated. In some embodiments, the ring is a 6-membered ring. In some embodiments, the ring comprises two Si atoms. In some embodiments, the ring is further substituted.

[0134] In some embodiments, R 1g , R 2g and R3g Each of is independently selected from the group consisting of an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, a silane group, and combinations thereof.

[0135] In some embodiments, R 1g , R 2g and R 3g Each of the groups is independently selected from the group consisting of phenyl, methyl, ethyl, propyl, 1-methylethyl, butyl, 1-methylpropyl, 2-methylpropyl, pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1,1-dimethylpropyl, 1,2-dimethylpropyl, 2,2-dimethylpropyl, cyclopentyl, cyclohexyl, and partially or fully deuterated variants thereof.

[0136] In some embodiments, the formula -SiR 1g R 2g R 3g Or -GeR 1g R 2g R 3g The corresponding Si-containing structure or Ge-containing structure in List AA below may be selected from the group consisting of:

[0137]

[0138]

[0139]

[0140]

[0141] In some embodiments, the formula -SiR 1g R 2g R 3g Or -GeR 1g R 2g R 3g The corresponding Si-containing structure or Ge-containing structure in the following list AB may be selected from the group consisting of:

[0142]

[0143]

[0144]

[0145]

[0146] In some embodiments, no two R A joined or fused to form a ring.

[0147] In some embodiments, two R AIn some embodiments, two R A Joined or fused to form a 5- or 6-membered aromatic ring. In some of these embodiments, the aromatic ring can be benzene, pyridine, pyrimidine, pyridazine, pyrazine, triazine, imidazole, pyrazole, pyrrole, oxazole, furan, thiophene, triazole or thiazole.

[0148] In some embodiments, at least one R B is not hydrogen. In some embodiments, at least one R B In some embodiments, at least one R B Contains a substituent selected from the group consisting of alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof.

[0149] In some embodiments, at least one R C is not hydrogen. In some embodiments, X 5 R C is not hydrogen. In some embodiments, X 6 R C Not hydrogen.

[0150] In some embodiments, at least one R C In some embodiments, at least one R C Contains at least two C atoms. In some embodiments, at least one R C Contains at least three C atoms. In some embodiments, at least one R C Contains at least four C atoms.

[0151] In some embodiments, X 5 R C In some embodiments, X 6 R C Contains at least one C atom.

[0152] In some embodiments, at least one R C The invention further comprises a substituent selected from the group consisting of an alkyl group, a cycloalkyl group, a silyl group, a germyl group, an aryl group, a heteroaryl group, and combinations thereof. 5 R C comprises a substituent selected from the group consisting of: alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof. In some embodiments, X 6 R C Contains a substituent selected from the group consisting of alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof.

[0153] In some embodiments, at least one R CIn some embodiments, X 5 R C In some embodiments, X 6 R C Contains branched alkyl or cycloalkyl groups.

[0154] In some embodiments, at least one R comprising a silane group or a germanium group A With another R A A ring is formed which is fused to ring A comprising at least 6 ring atoms.

[0155] In some embodiments, Formula I comprises an electron withdrawing group. In some embodiments, the electron withdrawing group has a Hammett constant greater than 0. In some embodiments, the electron withdrawing group has a Hammett constant equal to or greater than 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, or 1.1.

[0156] In some embodiments, Formula I comprises an electron withdrawing group selected from the group consisting of the structures listed in the following EWG1: F, CF3, CN, COCH3, CHO, COCF3, COOMe, COOCF3, NO2, SF3, SiF3, PF4, SF5, OCF3, SCF3, SeCF3, SOCF3, SeOCF3, SO2F, SO2CF3, SeO2CF3, OSeO2CF3, OCN, SCN, SeCN, NC, + N(R k2 )3、(R k2 )2CCN、(R k2 )2CCF3, CNC(CF3)2, BR k3 R k2 , substituted or unsubstituted dibenzoborole, 1-substituted carbazole, 1,9-substituted carbazole, substituted or unsubstituted carbazole, substituted or unsubstituted pyridine, substituted or unsubstituted pyrimidine, substituted or unsubstituted pyrazine, substituted or unsubstituted pyridoxine, substituted or unsubstituted triazine, substituted or unsubstituted oxazole, substituted or unsubstituted benzoxazole, substituted or unsubstituted thiazole, substituted or unsubstituted benzothiazole, substituted or unsubstituted imidazole, substituted or unsubstituted benzimidazole, ketone, carboxylic acid, ester, nitrile, isonitrile, sulfinyl, sulfonyl, partially and fully fluorinated alkyl, partially and fully fluorinated aryl, partially and fully fluorinated heteroaryl, cyano-containing alkyl, cyano-containing aryl, cyano-containing heteroaryl, isocyanate,

[0157]

[0158] Each R k1 indicates mono-substitution to the maximum permissible substitution or no substitution;

[0159] where Y G Select from the group consisting of: BR e NR e , PR e ,O,S,Se,C=O,S=O,SO2,CR e R f 、SiR e R f and GeR e R f ;and

[0160] R k1 , R k2 , R k3 , R e and R f Each of is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein.

[0161] In some embodiments, Formula I comprises an electron withdrawing group selected from the group consisting of the structures in the following EWG2 list:

[0162]

[0163]

[0164] In some embodiments, Formula I comprises an electron withdrawing group selected from the group consisting of the following structures listed in EWG3:

[0165]

[0166]

[0167] In some embodiments, Formula I comprises an electron withdrawing group selected from the group consisting of the following structures listed in EWG4:

[0168]

[0169]

[0170] In some embodiments, Formula I comprises an electron withdrawing group, which is a π-electron deficient electron withdrawing group. In some embodiments, the π-electron deficient electron withdrawing group is selected from the group consisting of the structures listed in the π-EWG: CN, COCH3, CHO, COCF3, COOMe, COOCF3, NO2, SF3, SiF3, PF4, SF5, OCF3, SCF3, SeCF3, SOCF3, SeOCF3, SO2F, SO2CF3, SeO2CF3, OSeO2CF3, OCN, SCN, SeCN, NC, + N(R k2 )3. BR k2 R k3 , substituted or unsubstituted dibenzoborole, 1-substituted carbazole, 1,9-substituted carbazole, substituted or unsubstituted carbazole, substituted or unsubstituted pyridine, substituted or unsubstituted pyrimidine, substituted or unsubstituted pyrazine, substituted or unsubstituted pyridazine, substituted or unsubstituted triazine, substituted or unsubstituted oxazole, substituted or unsubstituted benzoxazole, substituted or unsubstituted thiazole, substituted or unsubstituted benzothiazole, substituted or unsubstituted imidazole, substituted or unsubstituted benzimidazole, ketone, carboxylic acid, ester, nitrile, isonitrile, sulfinyl, sulfonyl, partially and fully fluorinated aryl, partially and fully fluorinated heteroaryl, cyano-containing aryl, cyano-containing heteroaryl, isocyanate,

[0171] The variables are the same as defined previously.

[0172] In some embodiments of Formula I, at least one R A is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0173] In some embodiments of Formula I, at least one R B is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R Bis or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0174] In some embodiments of Formula I, at least one R C is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0175] In some embodiments, compounds comprising Formula I comprise at least one electron withdrawing group in the EWG1 list as defined herein. In some embodiments, compounds comprising Formula I comprise at least one electron withdrawing group in the EWG2 list as defined herein. In some embodiments, compounds comprising Formula I comprise at least one electron withdrawing group in the EWG3 list as defined herein. In some embodiments, compounds comprising Formula I comprise at least one electron withdrawing group in the EWG4 list as defined herein. In some embodiments, compounds comprising Formula I comprise at least one electron withdrawing group in the π-EWG list as defined herein.

[0176] In some embodiments, the ligand L A Selected from the group consisting of the following structures of Listing 2:

[0177]

[0178] in:

[0179] Y B1 and Y B2Each of which is independently absent or selected from the group consisting of: direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR' and GeRR';

[0180] At each occurrence, X is independently C or N;

[0181] Each R BB indicates mono-substitution to the maximum permissible substitution or no substitution;

[0182] R, R' and R BB Each of is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0183] Any two substituents may be fused or joined to form a ring.

[0184] In which ligand L A In some embodiments selected from List 2, at least one R C In some embodiments, at least one R C is a silane group or a germanium group. In some embodiments, at least one R BB In some embodiments, at least one R BB is a silane group or a germanium group. In some embodiments, at least one R C Selected from List AA. In some embodiments, at least one R C Selected from List AB. In some embodiments, at least one R BB Selected from List AA. In some embodiments, at least one R BB Selected from List AB. In some embodiments, X 6 is C and connected to X 6 R C In some embodiments, X 6 is C and connected to X 6 R C is a silane group or a germanium group. In some embodiments, X 6 is C and connected to X 6 R C Select from List AA.

[0185] In which ligand L A In some embodiments selected from List 2, at least one of R, R', R A , R BB or R C is partially or fully deuterated. In some embodiments, at least one RA is partially or fully deuterated. In some embodiments, at least one R BB is partially or fully deuterated. In some embodiments, at least one R C In some embodiments, at least one R or R' is partially or fully deuterated.

[0186] In which ligand L A In some embodiments selected from List 2, at least one R A is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0187] In which ligand L A In some embodiments selected from List 2, at least one R BB is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0188] In which ligand L A In some embodiments selected from List 1, at least one R C is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R Cis or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0189] In some embodiments, the ligand L A Selected from the group consisting of the following structures of Listing 3:

[0190]

[0191]

[0192]

[0193] in:

[0194] Y A , Y B1 , Y B2 and L D each of which is independently selected from the group consisting of BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR' and GeRR';

[0195] L is selected from the group consisting of a direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', GeRR', alkylene, cycloalkyl, aryl, cycloalkylene, arylene, heteroarylene, and combinations thereof;

[0196] G is Si or Ge;

[0197] R AA and R BB Each of represents mono-substitution to the maximum permissible substitution or no substitution;

[0198] Each R, R', Q 1 , Q 2 , Q 3 , R AA and R BB is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0199] Any two substituents may be fused or joined to form a ring.

[0200] In ligand L AIn some embodiments selected from List 3, at least one of R, R', R AA , R BB or R C is partially or fully deuterated. In some embodiments, at least one R AA is partially or fully deuterated. In some embodiments, at least one R BB is partially or fully deuterated. In some embodiments, at least one R C In some embodiments, at least one R or R' is partially or fully deuterated.

[0201] In ligand L A In some embodiments selected from Listing 3, at least one R AA is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R AA is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R AA is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R AA is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R AA is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0202] In ligand L A In some embodiments selected from Listing 3, at least one R BB is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R BB is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0203] In ligand L A In some embodiments selected from Listing 3, at least one R C is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one RC is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0204] In ligand L A In some embodiments selected from Listing 3, Q 1 is or comprises an electron withdrawing group from the EWG1 list as defined herein. 1 is or comprises an electron withdrawing group from the EWG2 list as defined herein. 1 is or comprises an electron withdrawing group from the EWG3 list as defined herein. 1 is or comprises an electron withdrawing group from the EWG4 list as defined herein. 1 is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0205] In ligand L A In some embodiments selected from Listing 3, Q 2 is or comprises an electron withdrawing group from the EWG1 list as defined herein. 2 is or comprises an electron withdrawing group from the EWG2 list as defined herein. 2 is or comprises an electron withdrawing group from the EWG3 list as defined herein. 2 is or comprises an electron withdrawing group from the EWG4 list as defined herein. 2 is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0206] In ligand L A In some embodiments selected from Listing 3, Q 3 is or comprises an electron withdrawing group from the EWG1 list as defined herein. 3 is or comprises an electron withdrawing group from the EWG2 list as defined herein. 3 is or comprises an electron withdrawing group from the EWG3 list as defined herein. 3 is or comprises an electron withdrawing group from the EWG4 list as defined herein. 3is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0207] In some embodiments, the ligand L A Choose from L Ai (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ) and L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ), wherein i is an integer from 1 to 28, and i' is an integer from 29 to 56; and R EA , R EB , R ED , R EE and R EF Each of which is independently selected from R1 to R 136 Group composed of EC Select R from those defined in List AA Z1 to R Z144 , and where L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1) to L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ) each has the structure defined in Listing 4a below:

[0208]

[0209]

[0210]

[0211]

[0212] Where L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1) to L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R136 )(R 136 ) each has the structure defined in Listing 4b below:

[0213]

[0214]

[0215]

[0216]

[0217] Where R1 to R 136 With the following structure in Listing 5:

[0218]

[0219]

[0220]

[0221] In some embodiments, the compound has M(L A ) p (L B ) q (L C ) r The formula, where L B and L C Each is a bidentate ligand; and wherein p is 1, 2 or 3; q is 0, 1 or 2; r is 0, 1 or 2; and p+q+r is the oxidation state of the metal M.

[0222] In some embodiments, the compound has a structural formula selected from the group consisting of: Ir(L A )3、Ir(L A )(L B )2、Ir(L A )2(L B )、Ir(L A )2(L C ) and Ir(L A )(L B )(L C ); and where L A , L B and L C Different from each other.

[0223] In some embodiments, L B is a substituted or unsubstituted phenylpyridine, and L C It is a substituted or unsubstituted acetylacetonate.

[0224] In some embodiments, the compound has the formula Pt(L A )(L B ); and where L A With L B Can be the same or different.

[0225] In some embodiments, L A With L B connected to form a tetradentate ligand.

[0226] In some embodiments, L B and L C Each of which is independently selected from the group consisting of the structures of Listing 6 below:

[0227]

[0228]

[0229]

[0230] But if R A Contains a silane group and the metal M is Ir, then L C Select from the group consisting of the following structures of Listing 8:

[0231] in:

[0232] T is selected from the group consisting of B, Al, Ga and In;

[0233] K 1 'Selected from the group consisting of: single bond, O, S, NR e , PR e , BR e , CR e R f and SiR e R f ;

[0234] Y 1 To Y 13 Each of which is independently selected from the group consisting of C and N;

[0235] Y'Select from the group consisting of: BR e , BR e R f NR e , PR e 、P(O)R e 、O、S、Se、C=O、

[0236] C=S、C=Se、C=NRe 、C=CR e R f 、S=O、SO2、CR e R f 、SiR e R f and GeR e R f ;

[0237] R e and R f may be fused or joined to form a ring;

[0238] Each R a , R b , R c and R d can independently represent mono-substitution to the maximum permissible substitution or no substitution;

[0239] R a1 , R b1 , R c1 , R d1 , R a , R b , R c , R d , R e and R f Each of is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0240] R a1 , R b1 , R c1 , R d1 , R a , R b , R c and R d Any two substituents of may be fused or joined to form a ring or to form a polydentate ligand.

[0241] In some embodiments, L B and L C Each of is independently selected from the group consisting of the structures of Listing 7 below:

[0242]

[0243]

[0244]

[0245]

[0246]

[0247]

[0248] But if R A Contains a silane group and the metal M is Ir, then L C Select from the group consisting of the following structures of Listing 8:

[0249] in:

[0250] R a '、R b '、R c '、R d ' and R e 'Each independently represents zero substitution, monosubstitution or up to the maximum allowed number of substitutions on its associated ring;

[0251] R a1 , R b1 , R c1 , R d1 , R a '、R b '、R c '、R d ' and R e ' are each independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0252] R a1 , R b1 , R c1 , R d1 , R a '、R b '、R c '、R d ' and R e The two substituents of ' may be fused or joined to form a ring or to form a multidentate ligand.

[0253] In some embodiments, metal M is Ir; p is 1 or 2; q is 0 or 1, and L C Freestyle IIa Formula IIb Formula IIc Formula IId Groups composed of.

[0254] In some embodiments, q is 0. In some embodiments, q is 1.

[0255] In some embodiments, L B Include wherein the variables are the same as previously defined. In some embodiments, Y 1 To Y 4In some embodiments, Y 1 To Y 4 At least one of is N. In some embodiments, Y 1 To Y 4 Exactly one of is N. In some embodiments, Y 1 is N. In some embodiments, Y 2 is N. In some embodiments, Y 3 is N. In some embodiments, Y 4 is N. In some embodiments, at least one R a is a tertiary alkyl group, a silane group or a germanium group. In some embodiments, at least one R a In some embodiments, Y 3 is C and connected to it R a is a tertiary alkyl group, a silane group or a germanium group. 1 To Y 3 It's C, Y 4 is N, and with Y 3 Connected R a is a tertiary alkyl group, a silane group or a germanium group. 1 To Y 3 It's C, Y 4 is N, and with Y 2 Connected R a is a tertiary alkyl group, a silane group or a germanium group. In some embodiments, at least one R b is a tertiary alkyl, a silane group or a germanium group. In some embodiments, the tertiary alkyl group is a tert-butyl group. In some embodiments, at least one pair of R a , a pair of R b or a pair of R a and R b Join or condense into a ring.

[0256] In some embodiments, the compound has the formula Ir(L A )3, Formula Ir(L A )(L Bk )2, Formula Ir(L A )2(L Bk ), formula Ir(L A )2(L Cj-I ) or formula Ir(L A )2(L Cj-II ),

[0257] Where L A According to any of the embodiments described herein including L A1 (R1)(R1)(R1)(R1)(R1)(R1) to L A56 (R136 )(R 136 )(R 136 )(R 136 )(R 136 )(R 136 );

[0258] Where k is an integer from 1 to 530, and each L Bk With the following structure defined in Listing 9:

[0259]

[0260]

[0261]

[0262]

[0263]

[0264]

[0265]

[0266]

[0267]

[0268]

[0269]

[0270]

[0271]

[0272] Where j is an integer from 1 to 1416, and each L Cj-I Based on the formula structure; and

[0273] Each L Cj-II Based on the formula The structure of Cj-I and L Cj-II Each L Cj , R 201 and R 202 Defined in Listing 10 below:

[0274]

[0275]

[0276]

[0277]

[0278]

[0279]

[0280]

[0281]

[0282]

[0283] Where R D1 To R D246 With the following structure in Listing 11:

[0284]

[0285]

[0286]

[0287] In some embodiments, the compound is selected from the group consisting of only L Bk The group consisting of those compounds corresponding to one of the following: L B1 , L B30 , L B31 , L B109 , L B110 , L B112 , L B113 , L B114 , L B125 , L B127 , L B138 , L B140 , L B149 , L B150 , L B170 , L B171 , L B172 , L B174 , L B208 , L B241 , L B312 , L B315 , L B356 , L B367 , L B371 , L B382 , L B439 , L B440 , LB455 , L B456 , L B457 , L B458 , L B461 , L B462 , L B463 , L B469 and L B476 .

[0288] In some embodiments, the compound is selected from the group consisting of only L Bk The group consisting of those compounds corresponding to one of the following: L B1 , L B30 , L B31 , L B125 , L B138 , L B171 , L B172 , L B356 , L B357 , L B367 , L B371 , L B382 , L B455 and L B456 .

[0289] In some embodiments, the compound is selected from the group consisting of only Cj-I or L Cj-II The group of compounds consisting of ligands corresponding to R 201 and R 202 is defined as one of the following structures: R D1 , R D3 , R D4 , R D5 , R D9 , R D10 , R D17 , R D18 , R D20 , R D22 , R D37 , R D40 , R D41 , R D42 , R D43 , R D48 , R D49 , R D50 , R D54 , R D55 , R D58 , R D59 , R D78 , R D79 , R D81 , R D87 , R D88 , R D89 , R D93 , R D116, R D117 , R D118 , R D119 , R D120 , R D133 , R D134 , R D135 , R D136 , R D143 , R D144 , R D145 , R D146 , R D147 , R D149 , R D151 , R D154 , R D155 , R D161 , R D175 , R D190 , R D193 , R D200 , R D201 , R D206 , R D210 , R D214 , R D215 , R D216 , R D218 , R D219 , R D220 , R D227 , R D237 , R D241 , R D242 , R D245 and R D246 .

[0290] In some embodiments, the compound is selected from the group consisting of only Cj-I or L Cj-II The group of compounds of the ligands: the corresponding R 201 and R 202 is defined as one selected from the following structures: R D1 , R D3 , R D4 , R D5 , R D9 , R D10 , R D17 , R D22 , R D43 , R D50 , R D78 , R D116 , R D118 , R D133 , R D134 , R D135 , R D136 , R D143 , R D144 , R D145 , RD146 , R D149 , R D151 , R D154 , R D155 , R D190 , R D193 , R D200 , R D201 , R D206 , R D210 , R D214 , R D215 , R D216 , R D218 , R D219 , R D220 , R D227 , R D237 , R D241 , R D242 , R D245 and R D246 .

[0291] In some embodiments, the compound is selected from the group consisting of only Cj-I The group consisting of those compounds whose ligand has one of the structures of List 12 below:

[0294] In some embodiments, the compound has a A )3、Ir(L A )2(L B )、Ir(L A )(L B )2、Ir(L A )2(L C ) and Ir(L A )(L B )(L C ) is a formula of a group consisting of. In some embodiments, L A Selected from the group consisting of the structures of Listing 2, Listing 3, and Listings 4a and 4b, L B Selected from List 6, List 7 and List 9 (L Bk ) structure, and L C Selected from List 7 or selected from L defined in List 10 Cj-I and L Cj-II A group of structures.

[0295] In some embodiments, L A is selected from the group consisting of the structures of Listing 2, and L B Choose from L Bk In some embodiments, L Ais selected from the group consisting of the structures of Listing 3, and L B Choose from L Bk In some embodiments, L A is selected from List 4b as defined herein, and L B Choose from L Bk wherein k is an integer from 1 to 530. In some embodiments, L A is selected from List 4a as defined herein, and L C Selected from the group consisting of List 8. In some embodiments, L A is selected from List 4a as defined herein, and L C Choose from L Cj-I and L Cj-II A group of structures consisting of, where j is an integer from 1 to 1416.

[0296] In some embodiments, the compound may have a A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))3 to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))3 is a compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))3, by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))(L B1 )2 to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))(L B530 )2 is a compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))(L Bk)2, by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))2(L B1 ) to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))2(L B530 ) of the compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))2(L Bk ), by Ir(L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1))2(L C1-I ) to Ir(L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))2(L C1416-I ) of the compound of formula Ir(L Ai (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))2(L Cj-I ), by Ir(L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1))2(L C1-II ) to Ir(L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))2(L C1416-II ) of the compound of formula Ir(L Ai (R EA )(R EB )(R EC )(R ED )(R EE)(R EF ))2(L Cj-II ), by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))2(L C1-I ) to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))2(L C1416-I ) of the compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))2(L Cj-I ), by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))2(L C1-II ) to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))2(L C1416-II ) of the compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))2(L Cj-II ), by Ir(L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1))(L B1 )(L C1-I ) to Ir(L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))(L B530 )(L C1416-I ) of the compound of formula Ir(L Ai (R EA )(REB )(R EC )(R ED )(R EE )(R EF ))(L Bk )(L Cj-I ), by Ir(L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1))(L B1 )(L C1-II ) to Ir(L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))(L B530 )(L C1416-II ) of the compound of formula Ir(L Ai (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))(L Bk )(L Cj-II ), by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))(L B1 )(L C1-I ) to Ir(L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))(L B530 )(L C1416-I ) of the compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))(L Bk )(L Cj-I ), by Ir(L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1))(L B1 )(L C1-II ) to Ir(L A56 (R136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ))(L B530 )(L C1416-II ) of the compound of formula Ir(L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ))(L Bk )(L Cj-II ), where L Ai (R EA )(R EB )(R EC )(R ED )(R EE )(R EF )、L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF )、L Bk and L Cj-I and L Cj-II are defined in this article.

[0297] In some embodiments, the compound is selected from the group consisting of the structures of Listing 13 below:

[0298]

[0299]

[0300]

[0301]

[0302]

[0303] In some embodiments, the compound has the structure of Formula III:

[0304]

[0305] in:

[0306] M 1 is Pd or Pt;

[0307] Moieties E and F are each independently a monocyclic or polycyclic structure comprising a 5-membered and / or 6-membered carbocyclic or heterocyclic ring;

[0308] Z 3 and Z 4 each independently is C or N;

[0309] K 3 and K 4 Each is independently selected from the group consisting of a direct bond, O and S, wherein the K 3 and K 4 At least two of them are direct bonds;

[0310] L 1 , L 2 and L 3 Each independently does not exist or is selected from the group consisting of a direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', GeRR', alkylene, cycloalkyl, aryl, cycloalkylene, arylene, heteroarylene and combinations thereof, wherein L 1 and L 2 At least one of them exists;

[0311] R E and R F Each independently represents zero substitution, monosubstitution, or up to the maximum permissible number of substitutions on its associated ring;

[0312] R, R', R E and R F Each of is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0313] Two adjacent R A , R B , R C , R E and R F May be joined or fused together to form a ring.

[0314] In some embodiments, R, R', R E and R F Each of which is independently hydrogen or a substituent selected from the group consisting of deuterium, fluorine, alkyl, cycloalkyl, heteroalkyl, alkoxy, aryloxy, amino, silanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, aryl, heteroaryl, nitrile, isonitrile, thio, and combinations thereof.

[0315] In some embodiments of Formula III, R A , R B , RC , R E or R F At least one of R A is partially or fully deuterated. In some embodiments, at least one R B is partially or fully deuterated. In some embodiments, at least one R C is partially or fully deuterated. In some embodiments, at least one R E is partially or fully deuterated. In some embodiments, at least one R F In some embodiments of Formula III, at least R or R' is present and is partially or fully deuterated.

[0316] In some embodiments, Formula III comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, Formula III comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, Formula III comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, Formula III comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, Formula III comprises an electron withdrawing group from the π-EWG list as defined herein.

[0317] In some embodiments of Formula III, at least one R A , R B , R C , R E or R F is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R A , R B , R E or R F is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R A , R B , R E or R F is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R A , R B , R E or R F is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R A , R B , R E or R Fis or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0318] In some embodiments of Formula III, at least one R A is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R A is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0319] In some embodiments of Formula III, at least one R B is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R B is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0320] In some embodiments of Formula III, at least one R C is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R C is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0321] In some embodiments of Formula III, at least one R E is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one RE is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R E is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R E is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R E is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0322] In some embodiments of Formula III, at least one R F is or comprises an electron withdrawing group from the EWG1 list as defined herein. In some embodiments, at least one R F is or comprises an electron withdrawing group from the EWG2 list as defined herein. In some embodiments, at least one R F is or comprises an electron withdrawing group from the EWG3 list as defined herein. In some embodiments, at least one R F is or comprises an electron withdrawing group from the EWG4 list as defined herein. In some embodiments, at least one R F is or comprises an electron withdrawing group from the π-EWG list as defined herein.

[0323] In some embodiments of Formula III, both moiety E and moiety F are 6-membered aromatic rings.

[0324] In some embodiments of Formula III, the moiety F is a 5- or 6-membered heteroaromatic ring.

[0325] In some embodiments of Formula III, L 1 It is O or CRR'.

[0326] In some embodiments of Formula III, Z 4 is N and Z 3 is C. In some embodiments of Formula III, Z 4 is C and Z 3 It is N.

[0327] In some embodiments of Formula III, L 2 is a direct bond. In some embodiments of Formula III, L 2 It is NR.

[0328] In some embodiments of Formula III, K, K 3 and K 4 They are all direct keys.

[0329] In some embodiments of Formula III, K, K 3 and K4 One of them is O.

[0330] In some embodiments of Formula III, the compound is selected from the group consisting of A' The group consisting of compounds of the formula (Ly):

[0331] Where L A' Selected from the group consisting of the following structures of Listing 14:

[0332]

[0333] Where L y Selected from the group consisting of the following structures of Listing 15:

[0334]

[0335]

[0336]

[0337]

[0338] in:

[0339] Each Y B1 and R N , X Z Each occurrence is independently selected from the group consisting of BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', and GeRR';

[0340] L is selected from the group consisting of a direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', GeRR', alkylene, cycloalkyl, aryl, cycloalkylene, arylene, heteroarylene, and combinations thereof;

[0341] G is Si or Ge;

[0342] R AA and R BB Each of represents mono-substitution to the maximum permissible substitution or no substitution;

[0343] Each R, R', Q 1 , Q 2 , Q 3 , R N , R AA and RBB is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0344] Any two substituents may be fused or joined to form a ring.

[0345] In some embodiments of Formula III, the compound is selected from the group consisting of Pt(L A' The group consisting of compounds of the formula (Ly):

[0346]

[0347] Where L A' Choose from L A'x (R EA )(R EB )(R EC )(R ED )(R EE )(R EF )(R EG )(R EH )(W)(G), where x is an integer from 1 to 4, R EA , R EB , R EC , R ED and R EE Each of which is independently selected from R1 to R 136 , W is an integer from 1 to 5, and G is Si for G1 or Ge for G2; wherein L A'1 (R1)(R1)(R1)(R1)(R1)(R1)(R1)(R1)(1)(G1) to L A'4 (R 136 )(R 136 )(R 136 )(R 136 )(R 136 )(R 136 )(R 136 )(R 136 Each of )(5)(G2) is defined in the following Listing 16:

[0348]

[0349]

[0350] Where L y Choose from L Yt (R FA )(R FB ), where t is an integer from 1 to 4, and R FA and R FB Each independently selected from R1 to R136 ; where L Y1 (R1)(R1) to L Y4 (R 136 )(R 136 ) has the structure defined in Listing 17 below:

[0351]

[0352] Where R1 to R 136 Each of has the structure defined in Listing 5 as defined herein;

[0353] where for each W from 1 to 5, L 3 Has the structure defined in the following listing:

[0354] W＝1 W＝2 W＝3 W＝4 W＝5 <![CDATA[L 3 =Direct key]]> <![CDATA[L 3 =O]]> <![CDATA[L 3 =S]]> <![CDATA[L 3 =Se]]> <![CDATA[L 3 =N(CH3)]]> .

[0355] In some embodiments of Formula III, the compound is selected from the group consisting of the structures of Listing 18 below:

[0356]

[0357] In some embodiments, the first ligand L described herein having formula I A The compound can be at least 30% deuterated, at least 40% deuterated, at least 50% deuterated, at least 60% deuterated, at least 70% deuterated, at least 80% deuterated, at least 90% deuterated, at least 95% deuterated, at least 99% deuterated or 100% deuterated. As used herein, the deuterated percentage has its ordinary meaning and includes the percentage of all possible hydrogen atoms (such as hydrogen or deuterium positions) occupied by deuterium atoms in the compound. In some embodiments, the carbon atoms constituting the ring coordinated to the metal M are completely or partially deuterated. In some embodiments, the carbon atoms contained by the polycyclic system coordinated to the metal M are completely or partially deuterated. In some embodiments, the substituents connected to the monocyclic or fused polycyclic system coordinated to the metal M are completely or partially deuterated.

[0358] In some embodiments, the emission of the compound of Formula I at room temperature has a full width at half maximum (FWHM) equal to or less than 50, 45, 40, 35, 30, 25, 20, 15, 10, or 5 nm. Narrower FWHM means better color purity for OLED display applications.

[0359] In the case of a compound having the formula M(L A ) p (L B ) q (L C ) rIn some embodiments of the heteroleptic compound, the ligand L A Having a first substituent R I , wherein the first substituent R I The first atom aI in the ligand L A The ligand L is the farthest from the metal M among all the atoms in B (if present) has a second substituent R II , where the second substituent R II The first atom a-II in the ligand L B The ligand L is the farthest from the metal M among all the atoms in C (if present) has a third substituent R III , where the third substituent R III The first atom in a-III is in the ligand L C It is the farthest from the metal M among all the atoms in the atom.

[0360] In such heteroleptic compounds, the vector V can be defined as follows D1 、V D2 and V D3 . V D1 represents the direction from the metal M to the first atom aI, and the vector V D1 The value of D 1 Represents the metal M and the first substituent R I The straight-line distance between the first atom aI in V D2 represents the direction from the metal M to the first atom a-II, and the vector V D2 The value of D 2 Represents the metal M and the second substituent R II The straight-line distance between the first atom a-II in V D3 represents the direction from the metal M to the first atom a-III, and the vector V D3 The value of D 3 Represents the metal M and the third substituent R III The straight-line distance between the first atoms a-III in .

[0361] In such heteroleptic compounds, a sphere with radius r is defined, the center of which is the metal M and the radius r is the radius that allows the sphere to enclose the non-substituents R in the compound. I , R II and R III is the smallest radius of all atoms that are part of 1 , D 2 and D 3 At least one of them is larger than the radius r by at least In some embodiments, D 1 , D 2 and D3 At least one of the following is greater than the radius r by at least 2.9, 3.0, 4.3, 4.4, 5.2, 5.9, 7.3, 8.8, 10.3, 13.1, 17.6 or In some embodiments, D 1 , D 2 and D 3 At least two of the radius r are at least 1.5, 2.9, 3.0, 4.3, 4.4, 5.2, 5.9, 7.3, 8.8, 10.3, 13.1, 17.6 or more greater than the radius r.

[0362] In some embodiments of such heteroleptic compounds, the compound has a transition dipole moment axis and the transition dipole moment axis is aligned with the vector V D1 、V D2 and V D3 The angle between the transition dipole moment axis and the vector V is determined. D1 、V D2 and V D3 At least one angle between the transition dipole moment axis and the vector V is less than 40°. D1 、V D2 and V D3 At least one angle between the transition dipole moment axis and the vector V is less than 30°, 20°, 15°, or 10°. D1 、V D2 and V D3 At least two angles between the transition dipole moment axis and the vector V are less than 20°. D1 、V D2 and V D3 At least two of the angles therebetween are smaller than 15° or 10°.

[0363] In some embodiments, the transition dipole moment axis is aligned with the vector V D1 、V D2 and V D3 All three angles between are less than 20°. In some embodiments, the transition dipole moment axis and the vector V D1 、V D2 and V D3 All three angles between are less than 15° or 10°.

[0364] In some embodiments of such heteroleptic compounds, the compound has a vertical dipole ratio (VDR) of 0.33 or less. In some embodiments of such heteroleptic compounds, the compound has a VDR of 0.30, 0.25, 0.20, or 0.15 or less.

[0365] A person skilled in the art will readily understand the meaning of the terms transition dipole moment axis of a compound and vertical dipole ratio of a compound. However, the meaning of these terms can be found in U.S. Pat. No. 10,672,997, the disclosure of which is incorporated herein by reference in its entirety. In U.S. Pat. No. 10,672,997, the horizontal dipole ratio (HDR) of a compound is discussed, not VDR. However, a person skilled in the art will readily understand that VDR=1-HDR.

[0366] In some embodiments, the compound can be an emitting dopant. In some embodiments, the compound can generate emission via phosphorescence, fluorescence, thermally activated delayed fluorescence, triplet-triplet elimination or a combination of these methods. In some embodiments, the emitting dopant can be a racemic mixture, or can be enriched in one enantiomer. In some embodiments, the compounds of the present invention can have different stereoisomers, such as fac and mer. The current compound relates to a mixture of various isomers of individual isomers and any mixing ratio. In some embodiments, the compound can be homogeneous (each ligand is the same). In some embodiments, the compound can be mixed (at least one ligand is different from the others). In some embodiments, when there is more than one ligand coordinated to the metal, the ligands can be all the same. In some other embodiments, at least one ligand is different from other ligands. In some embodiments, each ligand can be different from all other ligands. This is also true in the following embodiments, that is, the ligand coordinated to the metal can be connected to other ligands coordinated to the metal to form a tridentate, tetradentate, pentadentate or hexadentate ligand. Thus, where coordinating ligands are linked together, in some embodiments all of the ligands may be identical, and in some other embodiments at least one of the linked ligands may be different from the other ligands.

[0367] In yet another aspect of the present disclosure, a formulation comprising the novel compounds disclosed herein is described. The formulation may include one or more components disclosed herein selected from the group consisting of: a solvent, an emitter, a host, a hole injection material, a hole transport material, an electron blocking material, a hole blocking material, and an electron transport material.

[0368] The present disclosure encompasses any chemical structure comprising novel compounds of the present disclosure or their monovalent or multivalent variants. In other words, the compounds of the present invention or their monovalent or multivalent variants can be part of a larger chemical structure. Such chemical structures can be selected from the group consisting of: monomers, polymers, macromolecules and supramolecules (also referred to as supermolecules). As used herein, "monovalent variants of compounds" refer to the same part as the compound, but one of the hydrogens has been removed and replaced with a bond to the rest of the chemical structure. As used herein, "multivalent variants of compounds" refer to the same part as the compound, but more than one hydrogen has been removed and replaced with one or more bonds to the rest of the chemical structure. In the case of supramolecules, the compounds of the present invention can also be incorporated into supramolecular complexes without covalent bonds. As used in this context, the description that structure A includes part B means that structure A includes the structure of part B, and the structure of part B does not include H or D atoms that can be connected to part B. This is because at least one H or D on a given part structure must be replaced with a substituent so that part B can be a part of structure A, and after it becomes a part of structure A, one or more of H or D on a given part B structure can be further replaced.

[0369] C. OLEDs and Devices of the Present Disclosure

[0370] In another aspect, the present disclosure also provides an OLED device comprising a first organic layer containing a compound as disclosed in the above compound section of the present disclosure.

[0371] In some embodiments, an OLED comprises: an anode; a cathode; and an organic layer disposed between the anode and the cathode, wherein the organic layer comprises a first ligand L comprising Formula I disclosed herein. A of compounds.

[0372] In some embodiments, the organic layer is selected from the group consisting of: HIL, HTL, EBL, EML, HBL, ETL, and EIL. In some embodiments, the organic layer may be an emissive layer and the compound as described herein may be an emissive dopant or a non-emissive dopant.

[0373] In some embodiments, the organic layer may further include a host, wherein the host includes at least one chemical group selected from the group consisting of triphenylene, carbazole, indolecarbazole, dibenzothiophene, dibenzofuran, dibenzoselenophene, 5λ 2-benzo[d]benzo[4,5]imidazo[3,2-a]imidazole, 5,9-dioxa-13b-borazinonaphtho[3,2,1-de]anthracene, azaborane, oxaborabine, dihydroacridine, xanthene, dihydrobenzoazasiline, dibenzooxasiline, phenoxazine, phenoxathiol, phenothiazine, dihydrophenazine, fluorene, naphthalene, anthracene, phenanthrol, phenanthroline, benzoquinoline, quinoline, isoquinoline, quinazoline, pyrimidine, pyrazine, pyridine, triazine, borane, silane, aza-triphenylene, aza-carbazole, aza-indolocarbazole, aza-dibenzothiophene, aza-dibenzofuran, aza-dibenzoselenophene, aza-5λ 2 -benzo[d]benzo[4,5]imidazo[3,2-a]imidazole and aza-(5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene).

[0374] In some embodiments, the subject can be selected from the group consisting of the following structures in subject group 1:

[0375]

[0376]

[0377]

[0378]

[0379]

[0380]

[0381]

[0382] in:

[0383] Each of J1 to J6 is independently C or N;

[0384] L' is a direct bond or an organic linking group;

[0385] Each Y AA , Y BB , Y CC and Y DD independently selected from the group consisting of: absence of bond, direct bond, O, S, Se, CRR', SiRR', GeRR', NR, BR, BRR';

[0386] R A '、R B '、R C '、R D'、R E '、R F ' and R G Each of ' independently represents mono-substitution, up to maximum substitution, or no substitution;

[0387] Each R, R', R A '、R B '、R C '、R D '、R E '、R F ' and R G ' is independently hydrogen or a substituent selected from the group consisting of general substituents as defined herein; any two substituents may be joined or fused to form a ring;

[0388] Also, where possible, each unsubstituted aromatic carbon atom is optionally replaced with N to form an aza-substituted ring.

[0389] In some embodiments, at least one of J1 to J3 is N. In some embodiments, at least two of J1 to J3 are N. In some embodiments, all three of J1 to J3 are N. In some embodiments, each Y CC and Y DD is independently O, S or SiRR', or more preferably O or S. In some embodiments, at least one unsubstituted aromatic carbon atom is replaced by N to form a nitrogen heterocycle.

[0390] In some embodiments, the host is selected from the group consisting of EG1-MG1-EG1 to EG53-MG27-EG53 having the formula EGa-MGb-EGc, or EG1-EG1 to EG53-EG53 having the formula EGa-EGc when MGb is absent, wherein a is an integer from 1 to 53, b is an integer from 1 to 27, and c is an integer from 1 to 53. The structures of EG1 to EG53 are shown below:

[0391]

[0392]

[0393] The structures of MG1 to MG27 are shown below:

[0394]

[0395] In the MGb structures shown above, the two bonding positions in the asymmetric structures MG10, MG11, MG12, MG13, MG14, MG17, MG24 and MG25 are labeled with numbers for identification purposes.

[0396] In some embodiments, the host can be any of its aza-substituted variants, its fully or partially deuterated variants, and combinations thereof. In some embodiments, the host has the formula EGa-MGb-Egc and is selected from the group consisting of h1 to h112 as defined in the following List of Host Group 2, wherein each of MGb, EGa, and EGc is defined as follows:

[0397] h MGb EGa Ec h MGb EGa Ec h MGb EGa Ec h1 MG1 EG3 EG36 h39 MG13 3-EG17 9-EG4 h77 MG23 EG3 EG4 h2 MG1 EG8 EG12 h40 MG13 3-EG17 9-EG13 h78 MG23 EG3 EG5 h3 MG1 EG13 EG14 h41 MG13 3-EG17 9-EG31 h79 MG23 EG4 EG4 h4 MG1 EG13 EG18 h42 MG13 3-EG17 9-EG45 h80 MG23 EG4 EG5 h5 MG1 EG13 EG25 h43 MG13 3-EG17 9-EG46 h81 MG24 2-EG1 10-EG33 h6 MG1 EG13 EG36 h44 MG13 3-EG17 9-EG48 h82 MG24 2-EG4 10-EG36 h7 MG1 EG22 EG36 h45 MG13 3-EG17 9-EG49 h83 MG24 2-EG21 10-EG36 h8 MG1 EG25 EG46 h46 MG13 3-EG32 9-EG31 h84 MG24 2-EG23 10-EG36 h9 MG1 EG27 EG46 h47 MG13 3-EG44 9-EG3 h85 MG25 2-EG1 9-EG33 h10 MG1 EG27 EG48 h48 MG14 3-EG13 5-EG45 h86 MG25 2-EG3 9-EG36 h11 MG1 EG32 EG50 h49 MG14 3-EG23 5-EG45 h87 MG25 2-EG4 9-EG36 h12 MG1 EG35 EG46 h50 MG15 EG3 EG48 h88 MG25 2-EG17 9-EG27 h13 MG1 EG36 EG45 h51 MG15 EG17 EG31 h89 MG25 2-EG17 9-EG36 h14 MG1 EG36 EG49 h52 MG15 EG31 EG36 h90 MG25 2-EG21 9-EG36 h15 MG1 EG40 EG45 h53 MG16 EG17 EG17 h91 MG25 2-EG23 9-EG27 h16 MG2 EG3 EG36 h54 MG17 EG17 EG17 h92 MG25 2-EG23 9-EG36 h17 MG2 EG25 EG31 h55 MG18 EG16 EG24 h93 MG26 EG1 EG9 h18 MG2 EG31 EG33 h56 MG18 EG16 EG30 h94 MG26 EG1 EG10 h19 MG2 EG36 EG45 h57 MG18 EG20 EG41 h95 MG26 EG1 EG21 h20 MG2 EG36 EG46 h58 MG19 EG16 EG29 h96 MG26 EG1 EG23 h21 MG3 EG4 EG36 h59 MG20 EG1 EG31 h97 MG26 EG1 EG26 h22 MG3 EG34 EG45 h60 MG20 EG17 EG18 h98 MG26 EG3 EG3 h23 MG4 EG13 EG17 h61 MG21 EG23 EG23 h99 MG26 EG3 EG9 h24 MG5 EG13 EG45 h62 MG22 EG1 EG45 h100 MG26 EG3 EG23 h25 MG5 EG17 EG36 h63 MG22 EG1 EG46 h101 MG26 EG3 EG26 h26 MG5 EG18 EG36 h64 MG22 EG3 EG46 h102 MG26 EG4 EG10 h27 MG6 EG17 EG17 h65 MG22 EG4 EG46 h103 MG26 EG5 EG10 h28 MG7 EG43 EG45 h66 MG22 EG4 EG47 h104 MG26 EG6 EG10 h29 MG8 EG1 EG28 h67 MG22 EG9 EG45 h105 MG26 EG10 EG10 h30 MG8 EG6 EG7 h68 MG23 EG1 EG3 h106 MG26 EG10 EG14 h31 MG8 EG7 EG7 h69 MG23 EG1 EG6 h107 MG26 EG10 EG15 h32 MG8 EG7 EG11 h70 MG23 EG1 EG14 h108 MG27 EG52 EG53 h33 MG9 EG1 EG43 h71 MG23 EG1 EG18 h109 - EG13 EG18 h34 MG10 4-EG1 2-EG37 h72 MG23 EG1 EG19 h110 - EG17 EG31 h35 MG10 4-EG1 2-EG38 h73 MG23 EG1 EG23 h111 - EG17 EG50 h36 MG10 EG1 EG42 h74 MG23 EG1 EG51 h112 - EG40 EG45 h37 MG11 4-EG1 2-EG39 h75 MG23 EG2 EG18 h38 MG12 1-EG17 9-EG31 h76 MG23 EG3 EG3

[0398] In the table above, EGa and EGc structures bonded to one of the asymmetric structures MG10, MG11, MG12, MG13, MG14, MG17, MG24 and MG25 are annotated with a numerical prefix identifying its bonding position in the MGb structure.

[0399] In some embodiments, the organic layer may further include a host, wherein the host includes a metal complex.

[0400] In some embodiments, the emission layer may include two main bodies: a first main body and a second main body. In some embodiments, the first main body is a hole transport main body, and the second main body is an electron transport main body. In some embodiments, the first main body is a hole transport main body, and the second main body is a bipolar main body. In some embodiments, the first main body is an electron transport main body, and the second main body is a bipolar main body. In some embodiments, the first main body and the second main body may form an exciplex. In some embodiments, the emission layer may include a third main body. In some embodiments, the third main body is selected from the group consisting of: an insulating main body (wide bandgap main body), a hole transport main body, and an electron transport main body. In some embodiments, the third main body forms an exciplex with one of the first main body and the second main body or with both the first main body and the second main body. In some embodiments, the emission layer may include a fourth main body. In some embodiments, the fourth main body is selected from the group consisting of: an insulating main body (wide bandgap main body), a hole transport main body, and an electron transport main body. In some embodiments, the fourth main body forms an exciplex with one of the first main body, the second main body, and the third main body, with both of the first main body, the second main body, and the third main body, or with each of the first main body, the second main body, and the third main body. In some embodiments, the LUMO of the electron transport subject is less than -2.4eV, less than -2.5eV, less than -2.6eV or less than -2.7eV. In some embodiments, the HOMO of the hole transport subject is higher than -5.6eV, higher than -5.5eV, higher than -5.4eV or higher than -5.35eV. HOMO and LUMO values ​​can be determined using solution electrochemistry. Solution cyclic voltammetry and differential pulse voltammetry can be performed using a CH instrument model 6201B potentiostat, using anhydrous dimethylformamide (DMF) solvent and tetrabutylammonium hexafluorophosphate as supporting electrolytes. Glassy carbon, platinum wire and silver wire are used as working electrode, counter electrode and reference electrode, respectively. By measuring the peak potential difference by differential pulse voltammetry, the electrochemical potential can be referenced to the internal ferrocene-ferrocene salt redox pair (Fc / Fc+). The corresponding highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energies were determined by reference to the cationic and anionic redox potentials of ferrocene (4.8 eV vs. vacuum) according to literature ((a) Fink, R.; Heischkel, Y.; Thelakkat, M.; Schmidt, H.-W., "Chem. Mater. 1998, 10, 3620-3625).(b) Pommerehne, J.; Vestweber, H.; Guss, W.; Mahrt, R. F.; Bassler, H.; Porsch, M.; Daub, "Journal of Advanced Materials (J. Adv. Mater. 1995, 7, 551).

[0401] In some embodiments, the compounds as described herein may be sensitizers or components of sensitizers; wherein the device may further comprise an acceptor that receives energy from the sensitizer. In some embodiments, the acceptor is an emitter in the device. In some embodiments, the acceptor may be a fluorescent material. In some embodiments, the compounds described herein may be used as phosphorescent sensitizers in OLEDs, wherein one or more layers in the OLED contain an acceptor in the form of one or more non-delayed fluorescent and / or delayed fluorescent materials. In some embodiments, the compounds described herein may be used as a component of an excited complex used as a sensitizer. As a phosphorescent sensitizer, the compound must be able to transfer energy to the acceptor and the acceptor will emit energy or further transfer energy to the final emitter. The acceptor concentration may be in the range of 0.001% to 99.9%. The acceptor may be in the same layer as the phosphorescent sensitizer or in one or more different layers. In some embodiments, the acceptor is a thermally activated delayed fluorescent (TADF) material. In some embodiments, the acceptor is a non-delayed fluorescent material. In some embodiments, emission may be generated by any one or all of the sensitizer, the acceptor, and the final emitter. In some embodiments, the emission of the acceptor at room temperature has a full width at half maximum (FWHM) equal to or less than 50, 45, 40, 35, 30, 25, 20, 15, 10, or 5 nm. Narrower FWHM means better color purity for OLED display applications.

[0402] As used herein, phosphorescence generally refers to the emission of photons when the electron spin quantum number changes, that is, the initial and final states of the emission have different electron spin quantum numbers, such as from T1 to S0 state. Most of the Ir and Pt complexes currently used in OLEDs are phosphorescent emitters. In some embodiments, if the excited complex formation involves a triplet emitter, such excited complexes can also emit phosphorescence. On the other hand, a fluorescent emitter generally refers to the emission of photons when the electron spin quantum number does not change, such as from S1 to S0 state, or from D1 to D0 state. Fluorescent emitters can be delayed fluorescent or non-delayed fluorescent emitters. Depending on the spin state, the fluorescent emitter can be a singlet emitter or a doublet emitter or other multiplet emitter. It is believed that the internal quantum efficiency (IQE) of fluorescent OLEDs can exceed the 25% spin statistical limit through delayed fluorescence. There are two types of delayed fluorescence, namely P-type and E-type delayed fluorescence. P-type delayed fluorescence is produced by triplet-triplet annihilation (TTA). On the other hand, E-type delayed fluorescence does not rely on the collision of two triplets, but on the thermal population between the triplet and singlet excited states. Thermal energy can activate the triplet transition back to the singlet state. This type of delayed fluorescence is also known as TADF. E-type delayed fluorescence characteristics can be seen in exciplex systems or single compounds. Without being bound by theory, it is believed that TADF emission requires a small singlet-triplet energy gap (ΔE) of less than or equal to 400, 350, 300, 250, 200, 150, 100 or 50 meV. S-T ) compounds or excited complexes. There are two main types of TADF emitters, one is called donor-acceptor type TADF and the other is called multi-resonance (MR) TADF. Typically, a single compound donor-acceptor TADF compound is constructed by connecting an electron donor portion (such as an amino or carbazole derivative) and an electron acceptor portion (such as an N-containing six-membered aromatic ring or a cyano-substituted aromatic ring). A donor-acceptor excited complex can be formed between a hole transport compound and an electron transport compound. Examples of MR-TADF materials include highly conjugated fused ring systems. In some embodiments, MR-TADF materials contain boron, carbon, and nitrogen atoms. Such materials may also contain other atoms, such as oxygen. In some embodiments, the reverse intersystem crossing time from T1 to S1 of delayed fluorescence emission at 293K is less than or equal to 10 microseconds. In some embodiments, such time may be greater than 10 microseconds and less than 100 microseconds.

[0403] In some embodiments, the OLED may include additional compounds selected from the group consisting of: non-delayed fluorescent materials, delayed fluorescent materials, phosphorescent materials, and combinations thereof.

[0404] In some embodiments, the compounds of the invention described herein are phosphorescent materials.

[0405] In some embodiments, the phosphorescent material is an emitter that emits light within the OLED. In some embodiments, the phosphorescent material does not emit light within the OLED. In some embodiments, the phosphorescent material energy transfers its excited state to another material within the OLED. In some embodiments, the phosphorescent material participates in charge transport within the OLED. In some embodiments, the phosphorescent material is a sensitizer or a component of a sensitizer, and the OLED further comprises an acceptor. In some embodiments, the phosphorescent material forms an exciplex with another material (e.g., a host material, an emitter material) within the OLED.

[0406] In some embodiments, the non-delayed fluorescent material or delayed fluorescent material is an emitter that emits light in the OLED. In some embodiments, the non-delayed fluorescent material or delayed fluorescent material does not emit light in the OLED. In some embodiments, the non-delayed fluorescent material or delayed fluorescent material energy transfers its excited state to another material in the OLED. In some embodiments, the non-delayed fluorescent material or delayed fluorescent material participates in charge transport in the OLED. In some embodiments, the non-delayed fluorescent material or delayed fluorescent material is an acceptor, and the OLED further comprises a sensitizer.

[0407] In some embodiments of the OLED, the delayed fluorescent material comprises at least one donor group and at least one acceptor group. In some embodiments, the delayed fluorescent material is a metal complex. In some embodiments, the delayed fluorescent material is a non-metal complex. In some embodiments, the delayed fluorescent material is a Pt, Pd, Zn, Cu, Ag or Au complex (some of which are also called metal-assisted (MA) TADF). In some embodiments, the metal-assisted delayed fluorescent material comprises a metal-carbenium bond. In some embodiments, the non-delayed fluorescent material or the delayed fluorescent material comprises at least one chemical group selected from the group consisting of: aryl-amine, aryloxy, arylthio, triphenylene, carbazole, indolecarbazole, dibenzothiophene, dibenzofuran, dibenzoselenophene, 5λ 2 -Benzo[d]benzo[4,5]imidazo[3,2-a]imidazole, 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene, 5λ 2 9λ 2 -diaza-13b-borazinnaphtho[2,3,4-de]anthracene, 5-oxa-9λ 2-aza-13b-borazinnaphtho[3,2,1-de]anthracene, azacyclohexaborane, oxaborin, dihydroacridine, xanthracene, dihydrobenzazasilane, dibenzooxasilane, phenoxazine, phenoxathiol, phenothiazine, dihydrophenazine, fluorene, naphthalene, anthracene, phenanthrol, phenanthroline, benzoquinoline, quinoline, isoquinoline, quinazoline, pyrimidine, pyrazine, pyridine, triazine, borane, amino, silane, aza variants thereof, and combinations thereof. In some embodiments, the non-delayed fluorescent material or delayed fluorescent material comprises tri(aryl / heteroaryl)borane, wherein one or more pairs of substituents from aryl / heteroaryl groups are joined to form a ring. In some embodiments, the fluorescent material comprises at least one chemical group selected from the group consisting of naphthalene, anthracene, phenanthracene, phenanthracene, fluorene, pyrene, Perylene and Azulene.

[0408] In yet another aspect, the OLED of the present disclosure may further comprise an emission region comprising a compound or formulation of compounds as disclosed in the above compound section of the present disclosure. In some embodiments, the emission region may comprise: a first ligand L comprising formula I as defined herein; A In some embodiments, the emissive region is composed of one or more organic layers, wherein at least one of the one or more organic layers has a minimum thickness selected from the group consisting of: 350, 400, 450, 500, 550, 600, 650, and In some embodiments, at least one of the one or more organic layers is formed of an emissive system having a figure of merit (FOM) equal to or greater than a value selected from the group consisting of: 2.50, 2.55, 2.60, 2.65, 2.70, 2.75, 2.80, 2.85, 2.90, 2.95, 3.00, 5.00, 10.0, 15.0, and 20.0. The definition of FOM can be found in U.S. Patent Application Publication No. 2023 / 0292605, and the entire contents are incorporated herein by reference. In some embodiments, at least one of the one or more organic layers comprises a compound or formulation of a compound as disclosed in Sections A and D of the present disclosure.

[0409] In some embodiments, the OLED or emission region comprising the compounds of the present invention disclosed herein can be incorporated into a full-color pixel arrangement of a device. The full-color pixel arrangement of such a device includes at least one pixel, wherein the at least one pixel includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first OLED, which includes a first emission region. The second sub-pixel includes a second OLED, which includes a second emission region. In some embodiments, the first and / or second OLED, the first and / or second emission regions may be the same or different and each may independently have various device features and various embodiments of the compounds of the present invention included therein, as well as various combinations and sub-combinations of various device features and various embodiments of the compounds of the present invention included therein, as disclosed herein.

[0410] In some embodiments, the first emission region is configured to emit a wavelength having a peak wavelength λ max1 The second emission region is configured to emit light having a peak wavelength λ max2 In some embodiments, the peak wavelength λ max1 With λ max2 The difference between is at least 4 nm but within the same color. For example, light blue and dark blue light as described above. In some embodiments, the first emission region is configured to emit a light having a peak wavelength λ in one region of the visible spectrum of 400-500 nm, 500-600 nm, 600-700 nm. max1 and the second emission region is configured to emit light having a peak wavelength λ in one of the remaining regions of the visible spectrum of 400-500nm, 500-600nm, 600-700nm max2 light. In some embodiments, the first emission region comprises (if more than one) a first number of emission layers deposited one above the other; and the second emission region comprises (if more than one) a second number of emission layers deposited one above the other; and the first number is different from the second number. In some embodiments, both the first emission region and the second emission region comprise phosphorescent materials, which may be the same or different. In some embodiments, the first emission region comprises a phosphorescent material and the second emission region comprises a fluorescent material. In some embodiments, both the first emission region and the second emission region comprise fluorescent materials, which may be the same or different.

[0411] In some embodiments, at least one pixel of an OLED or an emissive region comprises a total of N subpixels; wherein the N subpixels comprise a first subpixel and a second subpixel; wherein each of the N subpixels comprises an emissive region; wherein the total number of emissive regions within at least one pixel is equal to or less than N-1. In some embodiments, the second emissive region is identical to the first emissive region; and each subpixel of at least one pixel comprises an emissive region that is identical to the first emissive region. In some embodiments, a full-color pixel arrangement may have a plurality of pixels comprising a first pixel region and a second pixel region; wherein at least one display feature in the first pixel region is different from a corresponding display feature in the second pixel region, and wherein at least one display feature is selected from the group consisting of: resolution, cavity mode, color, outcoupling, and color filter.

[0412] In some embodiments, the OLED is a stacked OLED comprising one or more charge generation layers (CGLs). In some embodiments, the OLED comprises a first electrode, a first emission region disposed above the first electrode, a first CGL disposed above the first emission region, a second emission region disposed above the first CGL, and a second electrode disposed above the second emission region. In some embodiments, the first emission region and / or the second emission region may have various device features as described above for the pixelated device. In some embodiments, the stacked OLED is configured to emit white. In some embodiments, one or more of the emission regions in the pixelated OLED or stacked OLED comprises a sensitizer and an acceptor having various sensitizing device features and various embodiments of the compounds of the present invention disclosed herein. For example, the first emission region is included in the sensitizing device, while the second emission region is not included in the sensitizing device; in some cases, both the first emission region and the second emission region are included in the sensitizing device.

[0413] In some embodiments, the OLED can emit light having at least 1%, 5%, 10%, 30%, 50%, 70%, 80%, 90%, 95%, 99% or 100% from a plasmon mode. In some embodiments, at least one of the anode, cathode, or a new layer disposed above the organic emission layer is used as an enhancement layer. The enhancement layer comprises a plasmon material exhibiting a surface plasmon resonance, the plasmon material non-radiatively couples to the emitter material, and transfers excited state energy from the emitter material to a non-radiative mode of a surface plasmon polariton. In some embodiments, the enhancement layer is disposed at a distance from the organic emission layer that does not exceed a threshold distance, wherein the emitter material has a total non-radiative decay rate constant and a total radiative decay rate constant due to the presence of the enhancement layer. The threshold distance is the position where the total non-radiative decay rate constant is equal to the total radiative decay rate constant. Another threshold distance is the distance at which the total radiative decay rate constant divided by the sum of the total non-radiative decay rate constant and the total radiative decay rate constant is equal to the photoluminescence yield of the emitting material in the absence of the enhancement layer.

[0414] In some embodiments, the OLED further comprises an outcoupling layer. In some embodiments, the outcoupling layer is disposed on a side above the enhancement layer opposite to the organic emission layer. The outcoupling layer scatters energy from surface plasmon polaritons. In some embodiments, this energy is scattered into free space as photons. In other embodiments, energy is scattered from the surface plasmon mode of the device into other modes, such as but not limited to an organic waveguide mode, a substrate mode, or another waveguide mode. In some embodiments, one or more intermediate layers may be disposed between the enhancement layer and the outcoupling layer. Examples of intermediate layers may be dielectric materials, including organic, inorganic, perovskite, oxides, and may include stacks and / or mixtures of these materials.

[0415] The enhancement layer changes the effective properties of the medium in which the emitter material resides, causing any or all of the following: reduced emissivity, changed emission line shape, variation in emission intensity with angle, changed emitter material stability, changed OLED efficiency, and reduced roll-off efficiency of the OLED device. Placing the enhancement layer on the cathode side, the anode side, or both, or placing the enhancement layer itself as a CGL, produces an OLED device that utilizes any of the above effects. In addition to the specific functional layers described in the various OLED examples mentioned herein and shown in the figures, the OLED according to the present disclosure may also include any other functional layers commonly found in OLEDs.

[0416] In some embodiments, the enhancement layer may include a plasmonic material, an optically active metamaterial, or a hyperbolic metamaterial. In some embodiments, the plasmonic material includes at least one metal. In such embodiments, the metal may include at least one of: Ag, Al, Au, Ir, Pt, Ni, Cu, W, Ta, Fe, Cr, Mg, Ga, Rh, Ti, Ru, Pd, In, Bi, or Ca, alloys or mixtures of these materials, and stacks of these materials. In some embodiments, the enhancement layer is configured as a planar layer. In other embodiments, the enhancement layer has wavelength-sized features that are periodically, quasi-periodically, or randomly arranged, or has sub-wavelength-sized features that are periodically, quasi-periodically, or randomly arranged.

[0417] In some embodiments, the outcoupling layer has wavelength-sized features or sub-wavelength-sized features that are arranged periodically, quasi-periodically, or randomly. In some embodiments, the outcoupling layer may be composed of a plurality of nanoparticles. In some embodiments, the outcoupling layer is composed of a plurality of nanoparticles disposed above a material. In these embodiments, the outcoupling layer may be adjusted by at least one of: changing the size of the plurality of nanoparticles, changing the shape of the plurality of nanoparticles, changing the material of the plurality of nanoparticles, adjusting the thickness of the material, changing the refractive index of the material, adding an additional layer disposed on the plurality of nanoparticles, changing the thickness of the enhancement layer, or changing the material of the enhancement layer. The plurality of nanoparticles of the device may be formed of at least one of: a metal, a dielectric material, a semiconductor material, a metal alloy, a mixture of dielectric materials, a stack or layering of one or more materials, and / or a core of one type of material and coated with a shell of another type of material. In some embodiments, the outcoupling layer is composed of at least metal nanoparticles, wherein the metal is selected from the group consisting of: Ag, Al, Au, Ir, Pt, Ni, Cu, W, Ta, Fe, Cr, Mg, Ga, Rh, Ti, Ru, Pd, In, Bi, and Ca, alloys or mixtures of these materials, and stacks of these materials. In some embodiments, the outcoupling layer is formed by photolithography.

[0418] In some embodiments of plasmonic devices, the emitter and / or host compound used in the emissive layer has a vertical dipole ratio (VDR) of 0.33 or greater. In some such embodiments, the emitter and / or host compound has a VDR of 0.40, 0.50, 0.60, 0.70, or greater.

[0419] In yet another aspect, the present disclosure also provides a consumer product comprising an organic light-emitting device (OLED) having an anode; a cathode; and an organic layer disposed between the anode and the cathode, wherein the organic layer may comprise a compound or a formulation of compounds as disclosed in the above compound section of the present disclosure.

[0420] In some embodiments, the consumer product comprises an OLED having an anode; a cathode; and an organic layer disposed between the anode and the cathode, wherein the organic layer may comprise a first ligand L comprising Formula I as defined herein. A of compounds.

[0421] In general, an OLED comprises at least one organic layer disposed between and electrically connected to an anode and a cathode. When an electric current is applied, the anode injects holes and the cathode injects electrons into the organic layer. The injected holes and electrons each migrate toward the oppositely charged electrode. When electrons and holes are localized on the same molecule, an "exciton" is formed, which is a localized electron-hole pair with an excited energy state. When the exciton relaxes through a light emission mechanism, light is emitted. In some cases, the exciton can be localized as an excimer or an excited complex. Non-radiative mechanisms (such as thermal relaxation) may also occur, but are generally considered undesirable.

[0422] Figure 1 An organic light-emitting device 100 is shown. The figures are not necessarily drawn to scale. The device 100 may include a substrate 110, an anode 115, a hole injection layer (HIL) 120, a hole transport layer (HTL) 125, an electron blocking layer (EBL) 130, an emission layer (EML) 135, a hole blocking layer (HBL) 140, an electron transport layer (ETL) 145, an electron injection layer (EIL) 150, a protective layer 155, a cathode 160, and a blocking layer 170. The cathode 160 is a composite cathode having a first conductive layer 162 and a second conductive layer 164. The device 100 can be manufactured by depositing the layers in sequence. The properties and functions of these various layers and example materials are described in more detail in US 7,279,704, columns 6-10, which are incorporated by reference.

[0423] More examples of each of these layers are available. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Patent No. 5,844,363, which is incorporated by reference in its entirety. An example of a p-doped hole transport layer is m-MTDATA doped with F4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. Patent Application Publication No. 2003 / 0230980, which is incorporated by reference in its entirety. Examples of luminescent and host materials are disclosed in U.S. Patent No. 6,303,238 to Thompson et al., which is incorporated by reference in its entirety. An example of an n-doped electron transport layer is BPhen doped with Li at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2003 / 0230980, which is incorporated by reference in its entirety. U.S. Patent Nos. 5,703,436 and 5,707,745, which are incorporated by reference in their entirety, disclose examples of cathodes comprising a composite cathode having a thin layer of a metal (e.g., Mg:Ag) with an overlying transparent, conductive, sputter-deposited ITO layer. The theory and use of barrier layers are described in more detail in U.S. Patent No. 6,097,147 and U.S. Patent Application Publication No. 2003 / 0230980, which are incorporated by reference in their entirety. Examples of injection layers are provided in U.S. Patent Application Publication No. 2004 / 0174116, which is incorporated by reference in its entirety. A description of protective layers can be found in U.S. Patent Application Publication No. 2004 / 0174116, which is incorporated by reference in its entirety.

[0424] Figure 2 An inverted OLED 200 is shown. The device includes a substrate 210, a cathode 215, an emissive layer 220, a hole transport layer 225, and an anode 230. Device 200 can be manufactured by depositing the layers in order. Because the most common OLED configuration has a cathode disposed above the anode, and device 200 has cathode 215 disposed below anode 230, device 200 can be referred to as an "inverted" OLED. Materials similar to those described with respect to device 100 can be used in the corresponding layers of device 200. Figure 2 An example is provided of how some layers may be omitted from the structure of device 100 .

[0425] Figure 1 and 2The simple layered structures described in are provided by way of non-limiting examples, and it should be understood that embodiments of the present disclosure may be used in conjunction with various other structures. The specific materials and structures described are exemplary in nature, and other materials and structures may be used. Functional OLEDs may be obtained by combining the various layers described in different ways, or the layers may be omitted entirely based on design, performance, and cost factors. Other layers not specifically described may also be included. Materials other than the specifically described materials may be used. Although many of the examples provided herein describe the various layers as comprising a single material, it should be understood that a combination of materials may be used, such as a mixture of a host and a dopant, or more generally, a mixture. In addition, the layers may have various sublayers. The names given to the various layers herein are not intended to be strictly limiting. For example, in device 200, hole transport layer 225 transports holes and injects holes into emissive layer 220, and may be described as a hole transport layer or a hole injection layer. In one embodiment, the OLED may be described as having an "organic layer" disposed between a cathode and an anode. This organic layer may comprise a single layer, or may further comprise, for example, Figure 1 and 2 Multiple layers of said different organic materials.

[0426] Structures and materials not specifically described may also be used, such as OLEDs containing polymeric materials (PLEDs), such as disclosed in U.S. Pat. No. 5,247,190 to Friend et al., which is incorporated by reference in its entirety. By way of another example, an OLED having a single organic layer may be used. OLEDs may be stacked, such as described in U.S. Pat. No. 5,707,745 to Forrest et al., which is incorporated by reference in its entirety. OLED structures may deviate from Figure 1 and 2 For example, the substrate may include angled reflective surfaces to improve out-coupling, such as a mesa structure as described in U.S. Pat. No. 6,091,195 to Forrest et al., and / or a pit structure as described in U.S. Pat. No. 5,834,893 to Bulovic et al., which are incorporated by reference in their entirety.

[0427] Unless otherwise specified, any of the layers of the various embodiments may be deposited by any suitable method. For organic layers, preferred methods include thermal evaporation, inkjet (as described in U.S. Pat. Nos. 6,013,982 and 6,087,196, incorporated by reference in their entirety), organic vapor phase deposition (OVPD) (as described in U.S. Pat. No. 6,337,102 to Forrest et al., incorporated by reference in their entirety), and deposition by organic vapor jet printing (OVJP, also referred to as organic vapor jet deposition (OVJD)) (as described in U.S. Pat. No. 7,431,968, incorporated by reference in their entirety). Other suitable deposition methods include spin coating and other solution-based processes. Solution-based processes are preferably carried out in nitrogen or an inert atmosphere. For other layers, preferred methods include thermal evaporation, sputtering, chemical vapor deposition, atomic layer deposition, and electron beam deposition. Preferred patterning methods include deposition through a mask, photolithography, and cold welding (as described in U.S. Pat. Nos. 6,294,398 and 6,468,819, which are incorporated by reference in their entirety) and patterning associated with some of the deposition methods such as inkjet and organic vapor jet printing (OVJP). Other methods may also be used. The material to be deposited may be modified to make it compatible with a specific deposition method. For example, branched or unbranched, preferably containing at least 3 carbons, such as alkyl and aryl substituents, may be used in small molecules to enhance their ability to withstand solution processing. Substituents having 20 or more carbons may be used, and 3 to 20 carbons are a preferred range. Materials having asymmetric structures may have better solution processability than materials having symmetric structures because asymmetric materials may have a lower tendency to recrystallize. Dendritic polymer substituents may be used to enhance the ability of small molecules to withstand solution processing.

[0428] The device manufactured according to the embodiments of the present disclosure may further optionally include a barrier layer. One purpose of the barrier layer is to protect the electrode and the organic layer from being exposed to harmful substances in an environment including moisture, steam and / or gas. The barrier layer can be deposited on the substrate, above the electrode, below the substrate, or next to the substrate, electrode, or above any other part (including the edge) of the device. The barrier layer may include a single layer or multiple layers. The barrier layer can be formed by various known chemical vapor deposition techniques and may include a composition having a single phase and a composition having multiple phases. Any suitable material or combination of materials may be used for the barrier layer. The barrier layer may be combined with an inorganic compound or an organic compound or both. Preferred barrier layers include multiple alternate layers of the following materials: polymeric materials and non-polymeric materials; organic materials and inorganic materials; or a mixture of polymeric materials and non-polymeric materials, an example of which is described in U.S. Patent No. 7,968,146, PCT Patent Application Nos. PCT / US2007 / 023098 and PCT / US2009 / 042829, which are incorporated herein by reference in their entirety.

[0429] The device manufactured according to the embodiments of the present disclosure can be incorporated into a variety of electronic component modules (or units), which can be incorporated into a variety of electronic products or intermediate components. Examples of the electronic products or intermediate components include display screens, lighting devices (such as discrete light source devices or lighting panels), etc. that can be utilized by end-user product manufacturers. The electronic component module may optionally include driving electronic devices and / or power supplies. The device manufactured according to the embodiments of the present disclosure can be incorporated into a variety of consumer products, and the consumer products have one or more electronic component modules (or units) incorporated therein. A consumer product comprising an OLED is disclosed, and the OLED includes a compound of the present disclosure in an organic layer in the OLED. The consumer product should include any kind of product containing one or more light sources and / or some type of visual display. Some examples of consumer products include flat panel displays, curved displays, computer monitors, medical monitors, televisions, billboards, lights for interior or exterior lighting and / or signaling, heads-up displays, fully or partially transparent displays, flexible displays, rollable displays, foldable displays, stretchable displays, laser printers, phones, cellular phones, tablet computers, tablet phones, personal digital assistants (PDAs), wearable devices, laptop computers, digital cameras, video cameras, viewfinders, microdisplays (displays with a diagonal of less than 2 inches), 3-D displays, virtual reality or augmented reality displays, vehicles, video walls comprising multiple displays tiled together, theater or stadium screens, light therapy devices, and signage. Various control mechanisms can be used to control devices manufactured according to the present disclosure, including passive matrices and active matrices. Many of the devices are intended to be used in a temperature range that is comfortable for humans, such as 18°C ​​to 30°C, and more preferably at room temperature (20-25°C), but can be used outside this temperature range (e.g., -40°C to +80°C).

[0430] More details regarding OLEDs and the definitions set forth above can be found in U.S. Patent No. 7,279,704, which is incorporated herein by reference in its entirety.

[0431] The materials and structures described herein can be applied to devices other than OLEDs. For example, other optoelectronic devices such as organic solar cells and organic photodetectors can employ the materials and structures. More generally, organic devices such as organic transistors can employ the materials and structures.

[0432] In some embodiments, the OLED has one or more features selected from the group consisting of: flexible, rollable, foldable, stretchable, and bendable. In some embodiments, the OLED is transparent or translucent. In some embodiments, the OLED further comprises a layer comprising carbon nanotubes. In some embodiments, the OLED further comprises one or more quantum dots. Such quantum dots can be in the emission layer, or in other functional layers, such as downconversion layers.

[0433] In some embodiments, the OLED comprises an RGB pixel arrangement or a white plus color filter pixel arrangement. In some embodiments, the OLED is a mobile device, a handheld device, or a wearable device. In some embodiments, the OLED is a display panel having a diagonal of less than 10 inches or an area of ​​less than 50 square inches. In some embodiments, the OLED is a display panel having a diagonal of at least 10 inches or an area of ​​at least 50 square inches. In some embodiments, the OLED is a lighting panel.

[0434] D. Other materials used in OLED

[0435] The materials described herein are various examples of specific layers that can be used in OLEDs. They can also be used in combination with a wide variety of other materials present in the device. For example, the emissive dopants disclosed herein can be used by themselves in the EML, or in combination with a wide variety of other emitters, hosts, transport layers, barrier layers, injection layers, electrodes, and other layers that may be present. The materials described or mentioned below are non-limiting examples of materials that can be used in combination with the compounds and devices disclosed herein, and those skilled in the art can easily consult the literature to identify other materials that can be used in combination.

[0436] a) Conductive dopants:

[0437] The charge transport layer can be doped with a conductivity dopant to substantially change its charge carrier density, which in turn will change its conductivity. The conductivity is increased by generating charge carriers in the matrix material, and depending on the type of dopant, a change in the Fermi level of the semiconductor can also be achieved. The hole transport layer can be doped with a p-type conductivity dopant, and an n-type conductivity dopant is used in the electron transport layer. In some embodiments, the conductive dopant comprises at least one chemical moiety selected from the group consisting of: a cyano group, a fluorinated aryl or heteroaryl group, a fluorinated alkyl or cycloalkyl group, an alkylene group, a heteroaryl group, an amide, a benzodithiophene, and a highly conjugated heteroaryl group extended by a non-cyclic double bond.

[0438] b)HIL / HTL:

[0439] The hole injection / transport material used in the present disclosure is not particularly limited, and any compound can be used as long as the compound is generally used as a hole injection / transport material. Examples of the material include (but are not limited to): phthalocyanine or porphyrin derivatives; aromatic amine derivatives; indolecarbazole derivatives; polymers containing fluorocarbons; polymers having a conductive dopant; conductive polymers such as PEDOT / PSS; self-assembling monomers derived from compounds such as phosphonic acid and silane derivatives; metal oxide derivatives such as MoO x ; p-type semiconductive organic compounds, such as 1,4,5,8,9,12-hexaazatriphenylenehexacarbonitrile; metal complexes; and crosslinkable compounds.

[0440] Examples of aromatic amine derivatives for use in HIL or HTL include, but are not limited to, the following general structure:

[0441]

[0442] Ar 1 To Ar 9 Each of the following is selected from the group consisting of aromatic hydrocarbon cyclic compounds: benzene, biphenyl, terphenyl, triphenylene, naphthalene, anthracene, phenanthrene, fluorene, pyrene, Perylene and azulene; a group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline , quinoxaline, naphthridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuranopyridine, furanodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine and selenophenodipyridine; and a group consisting of 2 to 10 cyclic structural units, which are groups of the same type or different types selected from aromatic hydrocarbon ring groups and aromatic heterocyclic groups and are directly or via at least one of oxygen atoms, nitrogen atoms, sulfur atoms, silicon atoms, phosphorus atoms, boron atoms, chain structural units and aliphatic ring groups. Ar 1 To Ar 9 Each of may be unsubstituted or may be substituted with a general substituent as described above, and any two substituents may be joined or fused to form a ring.

[0443] In some embodiments, each Ar 1 To Ar 9 independently comprising a portion selected from the group consisting of:

[0444]

[0445] Where k is an integer from 1 to 20; X 101 To X 108 is C or N; Z 101 is C, N, O or S.

[0446] Examples of metal complexes used in HIL or HTL include, but are not limited to, the following general formula:

[0447] Where Met is a metal with an atomic weight greater than 40; (Y 101 -Y 102 ) is a bidentate ligand, Y 101 and Y 102 The coordinating atoms of L are independently selected from C, N, O, P and S; 101 is another ligand; k' is an integer value from 1 to the maximum number of ligands that can be attached to the metal; and k'+k" is the maximum number of ligands that can be attached to the metal.

[0448] In some embodiments, (Y 101 -Y 102 ) is a 2-phenylpyridine or 2-phenylimidazole derivative. In some embodiments, (Y 101 -Y 102 ) is a carbene ligand. In some embodiments, Met is selected from Ir, Pt, Pd, Os, Cu and Zn. In some embodiments, the metal complex has a relative + / Fc coupling has a minimum oxidation potential in solution of less than about 0.6 V.

[0449] In some embodiments, the HIL / HTL material is selected from the group consisting of phthalocyanine and porphyrin compounds, starburst triarylamines, CF x Fluorocarbon polymers, conductive polymers (e.g., PEDOT:PSS, polyaniline, polythiophene), phosphonic acid and silane SAMs, triarylamine or polythiophene polymers containing conductive dopants, organic compounds containing conductive inorganic compounds (such as molybdenum oxide and tungsten oxide), n-type semiconductive organic complexes, metal organic metal complexes, crosslinkable compounds, polymers and copolymers based on polythiophene, triarylamines, triarylamines containing spirofluorene cores, arylamine carbazole compounds, triarylamines containing (di)benzothiophene / (di)benzofuran, indolecarbazoles, isoindole compounds and metal carbene complexes.

[0450] c) EBL:

[0451] An electron blocking layer (EBL) can be used to reduce the number of electrons and / or excitons leaving the emissive layer. The presence of such a blocking layer in a device can produce substantially higher efficiency and / or longer lifetimes than similar devices lacking a blocking layer. In addition, a blocking layer can be used to confine emission to a desired area of ​​the OLED. In some embodiments, the EBL material has a higher LUMO (closer to the vacuum level) and / or a higher triplet energy than one or more emitters closest to the EBL interface. In some embodiments, the compound used in the EBL contains at least one carbazole group and / or at least one arylamine group. In some embodiments, the HOMO energy level of the compound used in the EBL is shallower than the HOMO energy level of one or more of the hosts in the EML. In some embodiments, the compound used in the EBL contains the same molecule or the same functional group used in one of the hosts described below.

[0452] d) Subject:

[0453] The light-emitting layer of the organic EL device of the present disclosure preferably contains at least a light-emitting material as a dopant, and a host material. Examples of the host material are not particularly limited, and any metal complex or organic compound may be used as long as the host does not completely quench the emission of the dopant.

[0454] Examples of metal complexes used as hosts preferably have the following general formula:

[0455]

[0456] Where Met is a metal; (Y 103 -Y 104 ) is a bidentate ligand, Y 103 and Y 104 The coordinating atoms of L are independently selected from C, N, O, P and S; 101 is another ligand; k' is an integer value from 1 to the maximum number of ligands that can be attached to the metal; and k'+k" is the maximum number of ligands that can be attached to the metal.

[0457] In some embodiments, the metal complex is:

[0458]

[0459] where (ON) is a bidentate ligand with a metal coordinated to O and N atoms.

[0460] In some embodiments, Met is selected from Ir and Pt. In another embodiment, (Y 103 -Y 104 ) is a carbene ligand.

[0461] In some embodiments, the host compound contains at least one selected from the following group: a group consisting of aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, terphenyl, triphenylene, tetraphenylene, naphthalene, anthracene, phenanthrene, fluorene, pyrene, Perylene and azulene; a group consisting of aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridyl indole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, Oxadiazine, indole, benzimidazole, indazole, indoxazines, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, aza-dibenzothiophene, aza-dibenzofuran, aza-dibenzoselenophene, aza-carbazole, aza-indolcarbazole, aza-triphenylene, aza-tetraphenylene, 5λ 2 -benzo[d]benzo[4,5]imidazo[3,2-a]imidazole, 5,9-dioxa-13b-borazinnaphtho[3,2,1-de]anthracene; and a group consisting of 2 to 10 cyclic structural units, which are groups of the same type or different types selected from aromatic hydrocarbon ring groups and aromatic heterocyclic groups and are directly or via at least one of oxygen atoms, nitrogen atoms, sulfur atoms, silicon atoms, phosphorus atoms, boron atoms, chain structural units and aliphatic ring groups. Each option within each group may be unsubstituted or may be substituted with a general substituent as described herein or may be further condensed.

[0462] In some embodiments, the host compound comprises at least one moiety selected from the group consisting of:

[0463]

[0464]

[0465] Where k is an integer from 0 to 20 or from 1 to 20. 101 To X 108 Z is independently selected from C or N. 101 and Z 102 are independently selected from C, N, O or S.

[0466] In some embodiments, the host material is selected from the group consisting of: aryl carbazoles, metal 8-hydroxyquinolinates (e.g., alq3, balq), metal phenoxybenzothiazole compounds, conjugated oligomers and polymers (e.g., polyfluorene), aromatic fused rings, zinc complexes, Compounds, aryltriphenylene compounds, poly-fused heteroaryl compounds, donor-acceptor molecules, dibenzofuran / dibenzothiophene compounds, polymers (e.g., PVK), spirofluorene compounds, spirofluorene-carbazole compounds, indolecarbazole, 5-membered electron-deficient heterocycles (e.g., triazole, oxadiazole), tetraphenylene complexes, metal phenoxypyridine compounds, metal coordination complexes (e.g., Zn, Al containing N^N ligands), dibenzothiophene / dibenzofuran-carbazole compounds, silicon / germanium aromatic compounds, aromatic benzoyl esters, carbazoles connected by non-conjugated groups, aza-carbazole / dibenzofuran / dibenzothiophene compounds and high triplet metal organic metal complexes (e.g., metal-carbene complexes).

[0467] e) Emitter materials in EML:

[0468] One or more emitter materials may be used in combination with the compounds or devices disclosed herein. The emitter material may be emissive or non-emissive in the current device as described herein. Examples of emitter materials are not particularly limited, and any compound may be used as long as the compound is capable of producing emission in a conventional OLED device. Examples of suitable emitter materials include, but are not limited to, compounds capable of producing emission via phosphorescence, non-delayed fluorescence, delayed fluorescence (especially thermally activated delayed fluorescence, i.e., TADF (also known as E-type delayed fluorescence)), triplet-triplet annihilation, or a combination of these methods.

[0469] In some embodiments, the emitter material has the formula M(L 1 ) x (L 2 ) y (L 3 ) z ;

[0470] Where L 1 , L 2 and L 3 Can be the same or different;

[0471] where x is 1, 2, or 3;

[0472] Where y is 0, 1 or 2;

[0473] where z is 0, 1 or 2;

[0474] Wherein x+y+z is the oxidation state of the metal M;

[0475] Where L 1 Selected from the group consisting of structures in the following ligand list:

[0476]

[0477]

[0478] Each L 2 and L 3 Independently selected from the group consisting of structures in the list of and ligands in:

[0479] M is selected from the group consisting of Ir, Rh, Re, Ru, Os, Pt, Pd, Zn, Au, Ag and Cu;

[0480] T is selected from the group consisting of B, Al, Ga and In;

[0481] K 1 ' is a direct key or is selected from the group consisting of: NR e , PR e , O, S and Se;

[0482] Each Y 1 To Y 15 independently selected from the group consisting of carbon and nitrogen;

[0483] Y'Select from the group consisting of: BR e NR e , PR e ,O,S,Se,C=O,S=O,SO2,CR e R f 、SiR e R f and GeR e R f ;

[0484] Each R a , R b , R c and R d can independently represent a single substitution to the maximum possible number of substitutions, or no substitution;

[0485] Each R a1 , R b1 , R c1 , R d1 , R a , R b , R c , R d , R e and R f is independently hydrogen or a substituent selected from the group consisting of general substituents defined herein; and

[0486] Any two of the substituents may be fused or joined to form a ring or to form a polydentate ligand.

[0487] In some embodiments, the emitter material is selected from the group consisting of the following dopant group 1:

[0488]

[0489]

[0490]

[0491]

[0492]

[0493] in

[0494] X 96 To X 99 Each of is independently C or N;

[0495] Each Y 100 Independently selected from the group consisting of NR", O, S and Se;

[0496] R 10a , R 20a , R 30a , R 40a and R 50a Each of independently represents mono-substitution, up to maximum substitution, or no substitution;

[0497] R, R', R", R 10a , R 11a , R 12a , R 13a , R 20a , R 30a , R 40a , R 50a , R 60 , R 70 , R 97 , R 98 and R 99 Each of is independently hydrogen or a substituent selected from the group consisting of general substituents as defined herein; any two substituents may be joined or fused to form a ring.

[0498] In some embodiments, the emitter material is selected from the group consisting of the following dopant group 2:

[0499]

[0500]

[0501]

[0502]

[0503]

[0504]

[0505]

[0506] in:

[0507] Each Y 100 Independently selected from the group consisting of NR", O, S and Se;

[0508] L is independently selected from the group consisting of a direct bond, BR", BR"R"', NR", PR", O, S, Se, C=O, C=S, C=Se, C=NR", C=CR"R"', S=O, SO2, CR", CR"R"', SiR"R"', GeR"R"', alkyl, cycloalkyl, aryl, heteroaryl, and combinations thereof;

[0509] X 100 and X 200 at each occurrence selected from the group consisting of: O, S, Se, NR" and CR"R"';

[0510] Each R A" , R B" , R C" , R D" , R E" and R F" independently represents mono-substitution, up to maximum substitution, or no substitution;

[0511] R, R', R", R'', R A1 '、R A2 '、R A" , R B" , R C" , R D" , R E" , R F" , R G" , R H" , R I" , R J" , R K" , R L" , R M" and R N" Each of is independently hydrogen or a substituent selected from the group consisting of general substituents as defined herein; and any two substituents may be joined or fused to form a ring.

[0512] In some embodiments of the above dopant groups 1 and 2, each unsubstituted aromatic carbon atom may be replaced by N to form a nitrogen heterocycle. In some embodiments, the maximum number of N atoms in one ring is 1 or 2. In some embodiments of the above dopant group 2, each Pt atom in the formula may be replaced by a Pd atom.

[0513] In some embodiments of the OLED, the delayed fluorescent material comprises at least one donor group and at least one acceptor group. In some embodiments, the delayed fluorescent material is a metal complex. In some embodiments, the delayed fluorescent material is a non-metallic complex. In some embodiments, the delayed fluorescent material is a Zn, Cu, Ag or Au complex.

[0514] In some embodiments of OLEDs, the delayed fluorescent material has the formula M(L 5 )(L 6 ), where M is Cu, Ag or Au, L 5 and L 6 Different, and L 5 and L 6 Independently selected from the group consisting of:

[0515]

[0516]

[0517] Among them A 1 –A 9 are each independently selected from C or N;

[0518] Each R P , R Q and R U independently represents mono-substitution, up to maximum substitution, or no substitution;

[0519] Each R P , R P , R U , R SA , R SB , R RA , R RB , R RC , R RD , R RE and R RF is independently hydrogen or a substituent selected from the group consisting of general substituents as defined herein; any two substituents may be joined or fused to form a ring.

[0520] In some embodiments of the OLED, the delayed fluorescent material comprises at least one of the donor moieties selected from the group consisting of:

[0521]

[0522] where Y T , Y U , Y V and Y W Each is independently selected from the group consisting of B, C, Si, Ge, N, P, O, S, Se, C=O, S=O and SO2.

[0523] In some of the above embodiments, any carbon ring atom up to a total of up to three carbon ring atoms together with their substituents in each benzene ring of any of the above structures can be replaced by N.

[0524] In some embodiments, the delayed fluorescent material comprises at least one of an acceptor moiety selected from the group consisting of nitrile, isonitrile, borane, fluoride, pyridine, pyrimidine, pyrazine, triazine, aza-carbazole, aza-dibenzothiophene, aza-dibenzofuran, aza-dibenzoselenophene, aza-triphenylene, imidazole, pyrazole, oxazole, thiazole, isoxazole, isothiazole, triazole, thiadiazole, and oxadiazole. In some embodiments, the acceptor moiety and the donor moiety as described herein can be directly linked, via a conjugated linker or a non-conjugated linker (such as sp 3 carbon or silicon atoms).

[0525] In some embodiments, the fluorescent material comprises at least one of the chemical moieties selected from the group consisting of:

[0526]

[0527]

[0528] where Y F , Y G , Y H and Y I Each independently selected from the group consisting of: B, C, Si, Ge, N, P, O, S, Se, C=O, S=O and SO2;

[0529] Where X F and X G are each independently selected from the group consisting of C and N.

[0530] In some of the above embodiments, any carbon ring atom up to a total of up to three carbon ring atoms together with their substituents in each benzene ring of any of the above structures can be replaced by N.

[0531] f)HBL:

[0532] A hole blocking layer (HBL) can be used to reduce the number of holes and / or excitons that leave the emissive layer. The presence of such a blocking layer in a device can result in substantially higher efficiency and / or longer lifetime than a similar device lacking the blocking layer. In addition, a blocking layer can be used to confine emission to desired areas of the OLED. In some embodiments, the HBL material has a lower HOMO (further from the vacuum level) and / or higher triplet energy than one or more of the emitters closest to the HBL interface.

[0533] In some embodiments, the compounds used in HBL contain the same molecules or the same functional groups as used in the subjects described above.

[0534] In some embodiments, the compound used in HBL comprises at least one of the following moieties selected from the group consisting of:

[0535] Where k is an integer from 1 to 20; L 101 is another ligand, and k' is an integer from 1 to 3.

[0537] g)ETL:

[0538] The electron transport layer (ETL) may include a material capable of transporting electrons. The electron transport layer may be intrinsic (undoped) or doped. Doping may be used to enhance conductivity. Examples of ETL materials are not particularly limited, and any metal complex or organic compound may be used as long as it is generally used to transport electrons.

[0539] In some embodiments, the compounds used in the ETL comprise at least one of the following moieties in the molecule: and fullerene; wherein k is an integer from 1 to 20, X 101 To X 108 Selected from C or N; Z 101 Selected from the group consisting of C, N, O and S.

[0541] In some embodiments, the metal complex used in the ETL contains but is not limited to the following general formula:

[0542]

[0543] wherein (ON) or (NN) is a bidentate ligand having a metal coordinated to atoms O, N or N,N; L 101 is another ligand; k' is an integer value from 1 to the maximum number of ligands that can be attached to the metal.

[0544] In some embodiments, the ETL material is selected from the group consisting of anthracene-benzimidazole compounds, azatriphenylene derivatives, anthracene-benzothiazole compounds, metal 8-hydroxyquinolinates, metal hydroxybenzoquinolinates, bathocuprine compounds, 5-membered electron-deficient heterocycles (e.g., triazole, oxadiazole, imidazole, benzimidazole), thiole compounds, arylborane compounds, fluorinated aromatic compounds, fullerenes (e.g., C60), triazine complexes, and Zn(N^N) complexes.

[0545] h) Charge Generation Layer (CGL)

[0546] In a tandem or stacked OLED, the CGL plays a fundamental role in the performance and consists of an n-doped layer and a p-doped layer for injecting electrons and holes, respectively. Electrons and holes are supplied by the CGL and electrodes. The electrons and holes consumed in the CGL are refilled by electrons and holes injected from the cathode and anode, respectively; then, the bipolar current gradually reaches a steady state. Typical CGL materials contain n- and p-conductivity dopants used in the transport layer.

[0547] In any compound disclosed herein, hydrogen atom can be partially or completely deuterated. The minimum amount of deuterated hydrogen in the compound is selected from the group consisting of: 30%, 40%, 50%, 60%, 70%, 80%, 90%, 95%, 99% and 100%. As used herein, deuteration percentage has its common meaning and includes the percentage of all possible hydrogen and deuterium atoms replaced by deuterium atoms. In certain embodiments, deuterium atoms are connected to aromatic rings. In certain embodiments, deuterium atoms are connected to saturated carbon atoms, such as alkyl or cycloalkyl carbon atoms. In some other embodiments, deuterium atoms are connected to heteroatoms, such as Si or Ge atoms.

[0548] It should be understood that the various embodiments described herein are by way of example only, and are not intended to limit the scope of the present invention. For example, other materials and structures may be used to replace many materials and structures described herein without departing from the spirit of the present invention. The present invention as required may therefore include variations of specific examples and preferred embodiments described herein, as will be apparent to those skilled in the art. It should be understood that the various theories about why the present invention works are not intended to be restrictive.

[0549] E. Experimental Data

[0550] The compound 1 of the present invention can be prepared as follows.

[0551]

[0552] 4-Chloro-6-(trimethylsilyl)pyrimidine is reacted with trimethyl(3-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)naphthalen-1-yl)silane under standard Suzuki coupling reaction conditions to give 4-(trimethylsilyl)-6-(4-(trimethylsilyl)naphthalen-2-yl)pyrimidine, which is then reacted with IrCl3 in a solvent to give a chloro-bridged Ir dimer. Compound 1 of the present invention can be prepared by reacting the Ir dimer with (Z)-3,7-diethyl-6-hydroxynon-5-en-4-one and K2CO3. Other compounds of the present invention can also be prepared similarly.

[0553] Table 1. DFT results of compounds of the present invention and comparative compounds.

[0554]

[0555]

[0556]

[0557] Table 1 shows the electronic properties of the compounds of the present invention and comparative compounds calculated by DFT calculation. The T1 energy range of the examples of the present invention is 590nm to 630nm, which can be adjusted by substitution. For example, compounds 1, 3 and 4 of the present invention have T1 at 614, 616 and 623nm, which are expected to show more saturated red light than comparative compound 1.

[0558] The calculations were performed using the B3LYP function with the CEP-31G basis function set. Geometry optimization was performed in vacuum. Excitation energies were obtained under these optimized geometries using time-dependent density functional theory (TDDFT). A continuum solvent model was applied in the TDDFT calculations to simulate tetrahydrofuran solvent. All calculations were performed using the Gaussian program.

[0559] The calculated values ​​obtained using the DFT functional group and basis function group identified above are theoretical values. Comprehensive calculation schemes, such as Gaussian using the CEP-31G basis function group used herein, rely on the assumption that electronic effects are additive, and therefore, a larger basis function group can be used to extrapolate to the complete basis function group (CBS) limit. However, when the goal of a study is to understand the changes in HOMO, LUMO, S1, T1, bond dissociation energy, etc. of a series of structurally related compounds, the cumulative effect is expected to be similar. Therefore, although the absolute error caused by using B3LYP may be quite large compared to other calculation methods, the relative difference between HOMO, LUMO, S1, T1, and bond dissociation energy values ​​calculated using the B3LYP protocol is expected to reproduce the experiment well. See, for example, Hong et al., Journal of Materials Chemistry (Chem. Mater.) 2016, 28, 5791–98, 5792–93 and Supplementary Information (discussing the reliability of DFT calculations in the context of OLED materials). In addition, for iridium or platinum complexes suitable for use in the OLED field, the data obtained by DFT calculations are closely related to actual experimental data. See Tavasli et al., J. Mater. Chem. 2012, 22, 6419-29, 6422 (Table 3) (showing DFT calculations that are closely related to actual data for a variety of emissive complexes); Morello, GR, J. Mol. Model. 2017, 23: 174 (studying a variety of DFT functional groups and basis function groups and concluding that the combination of B3LYP and CEP-31G is particularly accurate for emissive complexes).

Claims

1. A compound comprising a first ligand L of formula I A : in: L A coordinated to the metal M by the indicated dashed line; The metal M has an atomic mass of at least 40 and can be coordinated with other ligands; The moiety B is a monocyclic or polycyclic fused ring system, wherein each ring in the monocyclic or polycyclic fused ring system is independently a 5-membered or 6-membered carbocyclic or heterocyclic ring; X 1 To X 6 Each of is independently C or N; K is selected from the group consisting of: direct key, O, S, N (R α )、P(R α )、B(R α )、C(R α )(R β ) and Si(R α )(R β ); At least one R A The substituent comprises a silane group or a germanium group; If R A The substituent comprises a silane group and the metal M is Ir, then the compound comprises at least one ligand L selected from the group consisting of C : Formula IIa Formula IIb Formula IIc Formula IId Z 1 and Z 2 Each of which is independently selected from the group consisting of O, S and NR; Any R being a silyl group or a germanyl group A Not with another R A Forming a 5-membered ring; R A , R B and R C Each of represents mono-substitution to the maximum permissible substitution or no substitution; Each Ra1, Rb1, Rc1, Rd1, R α , R β , R A , R B and R C are independently hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thiol, sulfinyl, sulfonyl, phosphino, selenanyl, and combinations thereof; L A can be joined with other ligands to form tridentate, tetradentate, pentadentate, or hexadentate ligands; and Any two substituents may be joined or fused to form a ring; wherein one or more of the following conditions are met: (1) At least one R B or R C Containing a silane group or a germanium group; (2) The R comprising the silane group or the germanium group A Substituents attached to X 1 , X 2 or X 4 ;or (3) If the R comprising the silane group or the germanium group A Connect to X 3 , then R A The silane or germane group is selected from the group consisting of structures in List AB, wherein List AB consists of:

2. The compound of claim 1, wherein the moiety B is selected from the group consisting of benzene, pyridine, pyrimidine, pyridazine, pyrazine, triazine, imidazole, pyrazole, pyrrole, oxazole, furan, thiophene, thiazole, triazole, naphthalene, quinoline, isoquinoline, quinazoline, benzofuran, aza-benzofuran, benzoxazole, aza-benzoxazole, benzothiophene, aza-benzothiophene, benzothiazole, aza-benzothiazole, benzoselenophene, aza-benzoselenophene, indene , aza-indene, indole, aza-indole, benzimidazole, aza-benzimidazole, carbazole, aza-carbazole, dibenzofuran, aza-dibenzofuran, dibenzothiophene, aza-dibenzothiophene, quinoxaline, phthalazine, phenanthrene, aza-phenanthrene, anthracene, aza-anthracene, phenanthridine, fluorene and aza-fluorene; and / or wherein the metal M is selected from the group consisting of Ir, Rh, Re, Ru, Os, Pt, Pd, Ag, Au and Cu; and / or wherein two R A joined or fused to form a ring.

3. The compound according to claim 1, wherein the compound comprises at least one ligand L coordinated to the metal M C , where L C Selected from the group consisting of: Formula IIa Formula IIb Formula IIc Formula IId 4. The compound according to claim 1, wherein X 1 To X 6 Each of which is C, or where X 1 To X 6 At least one of is N; and / or wherein K is a direct bond, S or O; and / or Where X 1 , X 2 or X 4 R A Contains a silane group or a germanium group; and / or At least one of the R A is a silane or germanium group selected from the group consisting of SiMe3, SiEt3, Si( i Pr)3、Si( t Bu)3, SiPh3, Si(CD3)3, GeMe3, GeEt3, Ge( i Pr)3、Ge( t Bu)3, GePh3, Ge(CD3)3, At least one of the R B comprising a substituent selected from the group consisting of a silane group, a germane group, an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, and combinations thereof; and / or At least one of the R C comprising a substituent selected from the group consisting of a silane group, a germane group, an alkyl group, a cycloalkyl group, an aryl group, a heteroaryl group, and combinations thereof; and / or wherein at least one R comprising a silane group or a germanium group A With another R A A ring is formed which is fused to ring A comprising at least 6 ring atoms.

5. The compound according to claim 1, wherein the ligand L A Select from the group consisting of: in: Y B1 and Y B2 Each of which is independently absent or selected from the group consisting of: direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR' and GeRR'; At each occurrence, X is independently C or N; Each R BB indicates mono-substitution to the maximum permissible substitution or no substitution; Each R, R' and R BB are independently hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thiol, selenanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and Any two substituents may be fused or joined to form a ring.

6. The compound according to claim 1, wherein the ligand L A Select from the group consisting of: in: Y A , Y B1 , Y B2 and L D each of which is independently selected from the group consisting of BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR' and GeRR'; L is selected from the group consisting of direct bond, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', GeRR', Alkylene, cycloalkyl, aryl, cycloalkylene, arylene, heteroarylene, and combinations thereof; G is Si or Ge; R AA and R BB Each of represents mono-substitution to the maximum permissible substitution or no substitution; Each R, R', Q 1 , Q 2 , Q 3 , R AA and R BB are independently hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thiol, selenanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and Any two substituents may be fused or joined to form a ring.

7. The compound according to claim 1, wherein the ligand L A Choose from L Ai (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ) and L Ai' (R EA )(R EB )(R EC )(R ED )(R EE )(R EF ), wherein i is an integer from 1 to 28, and i' is an integer from 29 to 56; and R EA , R EB , R ED , R EE and R EF Each of which is independently selected from R1 to R 136 Group composed of EC Select from the group consisting of: and Where L A1 (R1)(R1)(R Z1 )(R1)(R1)(R1) to L A28 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ) each has a structure defined as follows: Where L A29 (R1)(R1)(R Z1 )(R1)(R1)(R1) to L A56 (R 136 )(R 136 )(R Z144 )(R 136 )(R 136 )(R 136 ) each has a structure defined as follows: Where R1 to R 136 Has the following structure:

8. The compound according to claim 1, wherein the compound has M(L A ) p (L B ) q (L C ) r The formula, where L B and L C each is a bidentate ligand; and wherein p is 1, 2 or 3; q is 0, 1 or 2; r is 0, 1 or 2; And p+q+r is the oxidation state of the metal M.

9. The compound according to claim 8, wherein the compound has a A )3、Ir(L A )(L B )2、Ir(L A )2(L B )、Ir(L A )2(L C ) and Ir(L A )(L B )(L C ); and wherein L A , L B and L C different from each other; or Pt(L A )(L B ); and wherein L A and L B Can be the same or different.

10. The compound according to claim 9, wherein L B and L C Each of is independently selected from the group consisting of: But if R A Contains a silane group and the metal M is Ir, then L C Select from the group consisting of: in: T is selected from the group consisting of B, Al, Ga and In; K 1 'Selected from the group consisting of: single bond, O, S, NR e , PR e , BR e , CR e R f and SiR e R f ; Y 1 To Y 13 Each of which is independently selected from the group consisting of C and N; Y'Select from the group consisting of: BR e , BR e R f NR e , PR e 、P(O)R e 、O、S、Se、C=O、 C=S, C=Se, C=NR e , C=CR e R f , S=O, SO2, CR e R f , SiR e R f and GeR e R f ; R e and R f may be fused or joined to form a ring; Each R a , R b , R c and R d can independently represent mono-substitution to the maximum permissible substitution or no substitution; R a1 , R b1 , R c1 , R d1 , R a , R b , R c , R d , R e and R f each of which is independently hydrogen or a substituent selected from the group consisting of deuterium, halogen, alkyl, cycloalkyl, heteroalkyl, heterocycloalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carboxylic acid, ether, ester, nitrile, isonitrile, thiol, selenanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and R a1 , R b1 , R c1 , R d1 , R a , R b , R c and R d Any two substituents of may be fused or joined to form a ring or to form a polydentate ligand.

11. The compound according to claim 8, wherein the compound has the formula Ir(L A )3, Formula Ir(L A )(L Bk )2, Formula Ir(L A )2(L Bk ), formula Ir(L A )2(L Cj-I ) or formula Ir(L A )2(L Cj-II ), Where L A According to formula I; Where k is an integer from 1 to 530, and each L Bk Has the structure defined in the following listing: Where j is an integer from 1 to 1416, and each L Cj-I Based on the formula structure; and Each L Cj-II Based on the formula The structure of Cj-I and L Cj-II Each L Cj , R 201 and R 202 The definition is as follows: Where R D1 to R D246 Has the following structure:

12. The compound of claim 1, wherein the compound is selected from the group consisting of:

13. The compound according to claim 8, wherein the compound has the structure of Formula III: in: M 1 is Pd or Pt; Moieties E and F are each independently a monocyclic or polycyclic structure comprising a 5-membered and / or 6-membered carbocyclic or heterocyclic ring; Z 3 and Z 4 each independently is C or N; K 3 and K 4 Each is independently selected from the group consisting of a direct bond, O and S, wherein the K 3 and K 4 At least two of them are direct bonds; L 1 , L 2 and L 3 Each independently does not exist or is selected from the group consisting of: direct key, BR, BRR', NR, PR, P(O)R, O, S, Se, C=O, C=S, C=Se, C=NR, C=CRR', S=O, SO2, CR, CRR', SiRR', GeRR', alkylene, cycloalkyl, aryl, cycloalkylene, arylene, heteroarylene, and combinations thereof, wherein L 1 and L 2 At least one of them exists; R E and R F Each independently represents zero substitution, monosubstitution, or up to the maximum permissible number of substitutions on its associated ring; R, R', R E and R F Each of is independently hydrogen or a substituent selected from the group consisting of: deuterium, halide, alkyl, cycloalkyl, heteroalkyl, aralkyl, alkoxy, aryloxy, amino, silanyl, germanyl, borane, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, thio, selenoanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and When chemically feasible, two adjacent R A , R B , R C , R E and R F May be joined or fused together to form a ring.

14. An organic light emitting device (OLED), comprising: anode; cathode; and An organic layer is disposed between the anode and the cathode, wherein the organic layer comprises the compound of claim 1.

15. A consumer product comprising an organic light-emitting device, the organic light-emitting device comprising: anode; cathode; and An organic layer is disposed between the anode and the cathode, wherein the organic layer comprises the compound of claim 1.

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