Radiation induction direction sensor
By designing a radiation sensing direction sensor based on semiconductor photoelectric induction and diffraction optics, the problems of traditional star radiation sensors are solved, and high-precision sensing of small aircraft and satellite navigation positioning are achieved.
Patent Information
- Application Number
- CN202411762152.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-03
- Publication Date
- 2025-04-22
AI Technical Summary
Traditional astral radiation sensors have many unfavorable limitations such as large size, large weight, high energy consumption and expensive cost, and are difficult to meet the navigation and positioning needs of small aircraft and satellites.
A radiation sensing direction sensor based on semiconductor photoinduction and imaging principles and combined with diffraction optics is designed to achieve high-precision sensing of star radiation through diffraction micro-through holes and radiation isolation cavity.
This design can reduce volume, weight, energy consumption, and cost, while improving sensing accuracy and speed, and is suitable for navigation and positioning of small aircraft and satellites.
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Figure CN119860764A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of aerospace equipment, and in particular to a radiation sensing direction sensor. Background Art
[0002] For satellites or other spacecraft equipped with directional sensors, the sun and other celestial bodies provide sunlight radiation or starlight radiation, and the directional angles of these radiations relative to the sensing coordinates on the satellite or spacecraft play an important role in the flight orbit, attitude determination, navigation control, etc. of the satellite or spacecraft. With the rapid growth of various space vehicles, stellar radiation sensors, as an important part of the measurement package required for parallel orbit and attitude determination, are constantly expanding their application.
[0003] However, the traditional stellar radiation sensor is a photoelectric sensing electromechanical device used for spatial angle measurement. Even if it is further miniaturized, it still has many disadvantageous limitations such as large size, heavy weight, high energy consumption and high cost. Summary of the invention
[0004] In order to solve the problems existing in the prior art, the present invention provides a radiation sensing direction sensor.
[0005] The present invention provides a radiation-sensing direction sensor, comprising: a radiation shielding cover sheet, comprising at least one diffraction micro-through hole, wherein the diffraction micro-through hole is used to allow radiation to enter a radiation isolation cavity; an imaging substrate, a surface of which is provided with a radiation sensing unit array formed by a plurality of regularly arranged radiation sensing units, wherein the radiation sensing unit array is used to sense external radiation; and a radiation isolation cavity formed by the imaging substrate, the radiation shielding cover sheet and a side wall therebetween.
[0006] Optionally, the imaging substrate includes: a sensing signal readout and processing circuit connected to the radiation sensing unit array, and the sensing signal readout and processing circuit is composed of a silicon semiconductor CMOS.
[0007] Optionally, the material of the imaging substrate is at least one of silicon, germanium and compounds thereof.
[0008] Optionally, the radiation sensing direction sensor further comprises: a radiation bandpass filter cover, which is disposed on the radiation shielding cover sheet and covers the diffraction micro-through holes, and is used to receive radiation with limited sensing bandwidth and radiate it to the diffraction micro-through holes.
[0009] Optionally, the diameter of the diffraction micro-through hole is within the wavelength range of the radiation of the limited sensing bandwidth.
[0010] Optionally, the radiation sensing unit includes: at least one photodiode, the material of the photodiode is at least one of silicon, germanium, indium gallium arsenide, and mercury cadmium telluride, and the wavelength range of the electromagnetic wave radiated by the radiation sensing direction sensor is 0.4-12.0 μm.
[0011] Optionally, the photodiode is made of silicon semiconductor, and the wavelength range of the electromagnetic wave radiated by the radiation sensing direction sensor is 0.4-1.0 μm.
[0012] Optionally, the radiation shielding cover sheet includes: a radiation blocking layer and a cover substrate constructed thereunder, the radiation blocking layer is provided with a first through hole, the cover substrate is provided with a second through hole, and the first through hole and the second through hole together constitute the diffraction micro-through hole.
[0013] Optionally, the radiation shielding cover sheet also includes: a continuous, hole-free radiation-perspective interlayer constructed between the radiation blocking layer and the cover substrate, wherein the external radiation passes through the radiation-perspective interlayer in a diffraction manner after passing through the first through hole, and the diffraction waves passing through the radiation-perspective interlayer enter the radiation isolation cavity from the second through hole and are emitted to the radiation sensing unit array on the surface of the imaging substrate.
[0014] Optionally, the material of the radiation-perspective interlayer is silicon oxide, the radiation-blocking layer and the cover substrate are made of silicon, silicon compounds or a composite, and the wavelength range of the electromagnetic wave radiated by the radiation-sensitive direction sensor is 0.4-2.0 μm.
[0015] Optionally, the material of the radiation-perspective interlayer includes at least one of silicon, germanium or sulfide glass, the radiation-isolating cavity is a vacuum-sealed cavity, and the wavelength range of the electromagnetic wave radiated by the radiation-sensing direction sensor is 8-12 μm.
[0016] Optionally, the radiation sensing unit includes: a suspended radiation absorbing thermal resistance piece body, wherein the radiation absorbing thermal resistance piece body is made of vanadium oxide or amorphous silicon.
[0017] The present invention also provides a method for sensing the direction angle of the above-mentioned radiation-sensitive direction sensor, comprising: setting an onboard direction-sensitive Cartesian coordinate system (x, y, z) fixed to the aircraft; using the positive and negative sides of the x-axis, y-axis and z-axis of the onboard direction-sensitive Cartesian coordinate system as references, respectively setting a radiation-sensitive direction sensor in the six directions, the six radiation-sensitive direction sensors all facing the direction away from the aircraft; and sensing the star radiation at any orientation relative to the aircraft through the six radiation-sensitive direction sensors.
[0018] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
[0019] The radiation sensing direction sensor provided by the present invention is a radiation sensing direction sensitive device for sensing stellar radiation based on semiconductor photoelectric sensing and imaging principles and combined with diffraction optics. For autonomous and remote control orbit and attitude determination and control of small and micro aircraft and satellites, as an important member of the navigation and positioning sensing system package, the radiation sensing direction sensor can reduce size, weight, energy consumption, and cost, and can further improve performance indicators such as sensing accuracy and speed. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0021] Figure 1 It is a schematic diagram of the three-dimensional structure of the radiation sensing direction sensor according to an embodiment of the present disclosure;
[0022] Figure 2 is a schematic cross-sectional structural diagram of a radiation sensing direction sensor according to an embodiment of the present disclosure;
[0023] Figure 3 It is a schematic cross-sectional structure diagram of a radiation shielding cover sheet of a radiation sensing direction sensor according to an embodiment of the present disclosure;
[0024] Figure 4 Schematic diagram of the diffraction beam angle calculation principle of the embodiment of the present disclosure;
[0025] Figure 5 FIG. 4 is a schematic diagram of the operation of the radiation sensing direction sensor according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0026] The preferred embodiments of the present invention will be described in more detail below. Although the preferred embodiments of the present invention are described below, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein.
[0027] In the present invention, unless otherwise specified, the directional words used, such as "upper and lower", generally refer to the upper and lower parts of the device in normal use, and "inside and outside" refer to the outline of the device. In addition, the terms "first, second, third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first, second, third" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined. In the present invention, it is an electrical device, so connection and interconnection both refer to conductive interconnection. Since the accompanying drawings are descriptions of the same device, the same numbers in the drawings represent the same components.
[0028] In order to provide a further understanding of the purpose, structure, features and functions of the present invention, specific examples of the present invention are further described in detail below in conjunction with the accompanying drawings.
[0029] The present invention provides a radiation-sensing direction sensor, comprising: a radiation shielding cover sheet, comprising at least one diffraction micro-through hole, wherein the diffraction micro-through hole is used to allow radiation to enter a radiation isolation cavity; an imaging substrate, a surface of which is provided with a radiation sensing unit array formed by a plurality of regularly arranged radiation sensing units, wherein the radiation sensing unit array is used to sense external radiation; and a radiation isolation cavity formed by the imaging substrate, the radiation shielding cover sheet and a side wall therebetween.
[0030] Attached Figure 1 FIG. 1 shows a spatial schematic diagram of a radiation sensing direction sensor 100 receiving electromagnetic wave radiation 29 from a star 20 and forming an induction. Figure 1 As shown, the radiation-sensitive direction sensor 100 includes a radiation shielding cover sheet 190 and an imaging substrate 110. The radiation shielding cover sheet 190, the imaging substrate 110 and the side wall 130 therebetween together form a radiation isolation cavity 150, and the radiation isolation cavity 150 is in a low-pressure or vacuum sealed state. The radiation shielding cover sheet 190 includes at least one diffraction micro-through hole 195, and the radiation 29 transmitted from the star 20 to the radiation-sensitive direction sensor 100 is diffracted through the diffraction micro-through hole 195 at the center of the radiation shielding cover sheet 190, and then enters the radiation isolation cavity 150 under the radiation shielding cover sheet 190. The imaging substrate 110 is arranged at the bottom of the radiation isolation cavity 150, and a radiation sensing unit array 121 formed by a plurality of regularly arranged radiation sensing units 111 is arranged on the surface. The radiation sensing unit array 121 is used to sense external radiation. The radiation 29 emitted from the diffraction micro-through hole 195 forms a light beam 39 with a certain scattering angle. The light beam 39 is irradiated onto the imaging substrate 110 at the bottom of the radiation isolation cavity 150. The radiation sensing unit array 121 absorbs and senses the diffracted and penetrated diffracted light beam 39 to form a grayscale pattern.
[0031] like Figure 2-3 As shown, the radiation shielding cover sheet 190 includes: a radiation blocking layer 194 and a cover substrate 192 disposed thereunder, and a continuous radiation perspective interlayer 193 without holes is further disposed between the radiation blocking layer 194 and the cover substrate 192. A first through hole is disposed on the radiation blocking layer 194, and a second through hole is disposed on the cover substrate 194. The first through hole, the second through hole and the radiation perspective interlayer 193 therebetween together constitute a diffraction micro-through hole 195. The radiation blocking layer 194 is used to selectively allow the received stellar radiation 29 to enter the radiation isolation cavity 150, and fully block or absorb the remaining radiation 29. When the radiation sensing direction sensor 100 is working, the stellar radiation 29 passes through the first through hole and then passes through the radiation perspective interlayer 193 in a diffraction manner. The diffracted wave passing through the radiation perspective interlayer 193 enters the radiation isolation cavity 150 from the second through hole and is emitted to the radiation sensing unit array 121 on the surface of the imaging substrate 110.
[0032] In the working state, the star 20 emits a radiation beam 25, and part of the radiation in the radiation beam 25 is transmitted to the radiation sensing direction sensor 100, that is, Figure 2-3 The radiation 29 is diffracted through the diffraction micro-through hole 195 at the center of the radiation shielding cover sheet 190 , and the diffracted light beam is the diffracted light beam 39 .
[0033] In the embodiment of the present disclosure, a radiation bandpass filter cover 198 is also configured on the radiation shielding cover sheet 190. Figure 2 As shown, the radiation bandpass filter cover 198 covers the diffraction micro-through hole 195, and is used to receive radiation with a limited sensing bandwidth and radiate it to the diffraction micro-through hole 195. In the embodiment of the present disclosure, the radiation bandpass filter cover 198 only allows radiation with a limited sensing bandwidth to enter and radiates it to the diffraction micro-through hole 195.
[0034] In some embodiments, the diameter of the diffractive micro-through hole is within the wavelength range of the radiation of the limited sensing bandwidth.
[0035] In some embodiments, the radiation sensing unit includes: a suspended radiation absorbing thermal resistance piece, wherein the radiation absorbing thermal resistance piece is made of vanadium oxide or amorphous silicon.
[0036] In the embodiments of the present disclosure, Figure 2 As shown, the imaging substrate 110 further includes a sensing signal reading and processing circuit 129 , which is connected to the radiation sensing unit array 121 , and is composed of a silicon semiconductor CMOS.
[0037] In some embodiments, the imaging substrate is made of at least one of silicon, germanium and compounds thereof.
[0038] In the embodiment of the present disclosure, the diffracted light beam 39 forms a grayscale pattern on the imaging substrate 110, such as Figure 1 As shown in FIG. 1 , the highest gray point 135 is surrounded by a series of equal gray closed curves 131. Figure 1-4 According to the diffraction principle, the positioning coordinates xyz of the imaging substrate 110 are exactly in the same direction as the positioning coordinates of the star 20 and its radiation 29 , and the direction angles 21 and 22 of the star 20 and its radiation 29 directly correspond to and are equivalent to the direction angles 31 and 32 of the diffracted light beam corresponding to the highest grayscale point 135 sensed by the sensing unit array 121 on the imaging substrate 110 .
[0039] exist Figure 2 In the embodiment shown, with the Cartesian coordinate system as a reference, although the radiation 29 of the star 20 is irradiated to the diffraction micro-through hole 195 at a certain elevation angle a relative to the xy plane, after diffraction occurs at the diffraction micro-through hole 195, the elevation angle b between the highest brightness optical axis 35 of the diffracted light beam 39 and the xy plane may be different from that of the incident radiation beam 25. According to the diffraction principle, there is a certain corresponding relationship between the two: the elevation angle b of the diffracted light beam 39 = f(a), and when the elevation angle a of the radiation 29 = 90°, the elevation angle b of the diffracted light beam 39 = 90°; the specific corresponding relationship depends on the microstructure of the diffraction micro-through hole 195, as well as the radiation wavelength and spectrum characteristics of the incident wave, and can also be determined by calibration. Figure 2 , the elevation angle of the diffracted beam 39 The elevation angle a of the incident radiation 29 is calculated from this, where n is the distance from the radiation perspective interlayer 193 to the imaging substrate 110, that is, Figure 2 of 133.
[0040] Because the deflection and fan-out shape of the diffraction wave relative to the incident wave are directly related to the wavelength, spectrum of the incident wave, and the microstructure and characteristic size of the diffraction micro-through hole 195, in order to improve the sensing accuracy and reduce the system noise signal intensity, preferably, in the embodiment disclosed herein, a radiation bandpass filter cover 198 is also provided. Before the radiation 29 of the star body 20 reaches the diffraction micro-through hole 195, the radiation beam 25 first passes through the radiation bandpass filter cover 198, so that radiation 29 of a fixed band can reach the diffraction micro-through hole 195, and the average wavelength of the radiation 29 of this fixed band can be used as a reference for constructing the characteristic size of the diffraction micro-through hole 195, such as the opening diameter.
[0041] In some embodiments, the radiation sensing unit includes: at least one photodiode, the material of the photodiode is at least one of silicon, germanium, indium gallium arsenide, and mercury cadmium telluride, and the wavelength range of the electromagnetic wave radiated by the radiation sensing direction sensor is 0.4-12.0 μm.
[0042] In the disclosed embodiment, the radiation passing through the radiation bandpass filter cover 198 includes visible light, near infrared, short-wave infrared, medium-wave infrared and long-wave far-infrared light radiation in the wavelength range of 0.4-12.0 μm. In different embodiments, by setting different radiation bandpass filter covers 198, targeted diffraction micro-through holes 195 can be accurately constructed, especially confirming their characteristic dimensions such as diameter, so as to configure corresponding semiconductor optoelectronic radiation sensing units 111 and radiation sensing unit arrays 121.
[0043] In the embodiment of the present disclosure, the photodiode is composed of a silicon semiconductor, the wavelength range of the electromagnetic wave of the radiation sensed by the radiation sensing direction sensor 100 is 0.4-1.0 μm, that is, the visible light plus near-infrared band, the diameter of the diffraction micro-through hole 195 can be selected to be between 0.4-1.0 μm, the radiation-transmitting interlayer 193 contained in the diffraction micro-through hole 195 can be composed of SiO2, the radiation blocking layer 194 can be composed of silicon and silicon metal or its compounds, and the radiation sensing unit is composed of a silicon diode.
[0044] In some embodiments, the radiation-transmitting interlayer is made of silicon oxide, the radiation-blocking layer and the cover substrate are made of silicon, silicon compounds or a composite, and the radiation-sensitive direction sensor senses electromagnetic waves with a wavelength range of 0.4-2.0 μm.
[0045] In some embodiments, when the radiation 29 is in the short-wave infrared band of 1.0-2.0 μm, the diameter of the diffraction micro-through hole can be selected between 1.0-2.0 μm, the radiation perspective interlayer is made of SiO2, the radiation blocking layer can be composed of silicon and silicon metal or its compounds, and the radiation sensing unit is composed of germanium or indium gallium arsenide diode.
[0046] In some embodiments, when the radiation 29 is in the far infrared band of 8.0-12.0 μm, the diameter of the diffraction micro-through hole can be between 8.0-12.0 μm, and the radiation perspective interlayer can be composed of silicon, germanium or sulfide glass, and also acts as a vacuum seal for the isolation cavity; and the radiation sensing unit 111 can be composed of a mercury cadmium telluride semiconductor diode, a suspended vanadium oxide or amorphous silicon thermistor, or a suspended silicon thermoelectric diode.
[0047] Because precise microstructures are required to achieve controllable and predictable diffraction of the received incident radiation beam, in some embodiments, the radiation shielding cover sheet and the diffraction micro-holes contained therein can be based on a silicon substrate, i.e., a silicon wafer, and completed through commonly used silicon-based micromachining processes.
[0048] The present disclosure also provides a method for preparing a radiation-sensitive direction sensor, comprising the steps of: providing a substrate, and arranging an induction signal readout and processing circuit on the substrate; arranging a plurality of radiation sensing units on the induction signal readout and processing circuit, wherein the substrate and the induction signal readout and processing circuit and the plurality of radiation sensing units thereon constitute an imaging substrate; arranging a side wall, wherein one end of the side wall is connected to the edge of the imaging substrate; arranging a cover substrate at the other end of the side wall, wherein the cover substrate comprises a second through hole located at the center of the cover substrate; forming a continuous and hole-free radiation perspective interlayer on the cover substrate; arranging a radiation blocking layer on the radiation perspective interlayer, wherein the radiation blocking layer comprises a first through hole located at the center of the radiation blocking layer, wherein the position of the first through hole corresponds to the position of the second through hole, wherein the cover substrate, the radiation perspective interlayer and the radiation blocking layer constitute a radiation shielding cover sheet, wherein the first through hole and the second through hole constitute a diffraction micro-through hole; arranging a radiation bandpass filter cover on the radiation shielding cover sheet, wherein the radiation bandpass filter cover covers the diffraction micro-through hole.
[0049] The disclosed embodiment also provides a method for directional angle sensing of a radiation-sensitive direction sensor, comprising: setting an onboard directional sensing Cartesian coordinate system (x, y, z) fixed to the aircraft; using the positive and negative sides of the x-axis, y-axis and z-axis of the onboard directional sensing Cartesian coordinate system as references, respectively setting a radiation-sensitive direction sensor in the six directions, wherein the six radiation-sensitive direction sensors all face the direction away from the aircraft; through the six radiation-sensitive direction sensors, the radiation of stellar bodies in any orientation relative to the aircraft can be sensed in all directions and at all angles.
[0050] Figure 5The radiation sensing direction sensor 100 and its isomorphic bodies 200, 300, 400, 500 and 600 provided by the present invention are shown, wherein the six radiation sensing direction sensors are mounted on an aircraft 800, so as to sense the spatial form of the electromagnetic wave radiation 29 of the star 20. The aircraft 800 flies along an orbit 890 relative to the earth 90, and the aircraft 800 has a Cartesian coordinate system fixed relative to the earth, including a longitudinal x-axis, a transverse y-axis and a normal z-axis. Preferably, in some embodiments, in order to sense the electromagnetic wave radiation 29 of the celestial body 20 in all directions, the celestial body 20 mentioned here refers to a celestial body outside the earth 90, such as the sun; six isomorphic and isomorphic radiation-sensing direction sensors 100, 200, 300, 400, 500 and 600 are respectively arranged perpendicular to the longitudinal x-axis, the lateral y-axis and the normal z-axis in six directions of the aircraft 800, namely, front and back, i.e., longitudinally, left and right, i.e., laterally, and up and down, i.e., normally, to synchronously sense the electromagnetic wave radiation 29 of the celestial body 20, so as to sense and determine the direction angle of the celestial body 20 relative to the fixed Cartesian coordinate system on the aircraft 800.
[0051] The radiation sensing direction sensor provided by the present invention is installed on an aviation or aerospace vehicle and is used to measure the direction angle of a space star as a radiation source relative to the radiation sensing direction sensor, that is, the direction angle of the aircraft. The radiation sensing direction sensor comprises a semiconductor radiation sensing array imaging substrate and a radiation shielding cover sheet with a diffraction micro-through hole arranged on the top of the radiation sensing direction sensor. The radiation generated by the space star can only be transmitted to the imaging substrate through the diffraction of the diffraction micro-through hole and sensed by the radiation sensing unit array on its surface. According to the position of the highest radiation value of the receiving radiation area indicated by the sensing signal image, the relative direction angle of the space star and its main radiation is determined, which can further improve the performance indicators such as sensing accuracy and speed.
[0052] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A radiation sensing direction sensor, characterized in that: include: a radiation shielding cover sheet, comprising at least one diffractive micro-through hole, wherein the diffractive micro-through hole is used to allow radiation to enter the radiation isolation cavity; An imaging substrate, a surface of which is provided with a radiation sensing unit array formed by a plurality of regularly arranged radiation sensing units, wherein the radiation sensing unit array is used to sense external radiation; A radiation isolation cavity is formed by the imaging substrate, the radiation shielding cover sheet and the side wall therebetween.
2. The radiation-sensitive direction sensor according to claim 1, characterized in that: The imaging substrate comprises: a sensing signal reading and processing circuit connected to the radiation sensing unit array, and the sensing signal reading and processing circuit is composed of a silicon semiconductor CMOS.
3. The radiation-sensitive direction sensor according to claim 1, characterized in that: The material of the imaging substrate is at least one of silicon, germanium and their compounds.
4. The radiation-sensitive direction sensor according to claim 1, characterized in that: Also includes: A radiation bandpass filter cover is constructed on the radiation shielding cover sheet, covers the diffraction micro-through hole, and is used for receiving radiation with limited sensing bandwidth and radiating it to the diffraction micro-through hole.
5. The radiation-sensitive direction sensor according to claim 4, characterized in that: The diameter of the diffractive micro-through hole is within the wavelength range of the radiation of the limited sensing bandwidth.
6. The radiation-sensitive direction sensor according to claim 1, characterized in that: The radiation sensing unit includes: at least one photodiode, the material of the photodiode is at least one of silicon, germanium, indium gallium arsenide, and mercury cadmium telluride, and the wavelength range of the electromagnetic wave radiated by the radiation sensing direction sensor is 0.4-12.0 μm.
7. The radiation-sensitive direction sensor according to claim 6, characterized in that: The photodiode is made of silicon semiconductor, and the wavelength range of the electromagnetic wave radiated by the radiation sensing direction sensor is 0.4-1.0 μm.
8. The radiation-sensitive direction sensor according to claim 1, characterized in that: The radiation shielding cover sheet comprises: a radiation blocking layer and a cover sheet substrate disposed thereunder, the radiation blocking layer is provided with a first through hole, the cover sheet substrate is provided with a second through hole, and the first through hole and the second through hole together constitute the diffraction micro-through hole.
9. The radiation-sensitive direction sensor according to claim 8, characterized in that: The radiation shielding cover sheet also includes: a continuous, hole-free radiation perspective interlayer constructed between the radiation blocking layer and the cover substrate. After passing through the first through hole, the external radiation passes through the radiation perspective interlayer in a diffraction manner. The diffraction waves passing through the radiation perspective interlayer enter the radiation isolation cavity from the second through hole and are emitted to the radiation sensing unit array on the surface of the imaging substrate.
10. The radiation-sensitive direction sensor according to claim 9, characterized in that: The material of the radiation-perspective interlayer is silicon oxide, the radiation-blocking layer and the cover substrate are made of silicon, silicon compounds or a composite, and the wavelength range of the electromagnetic wave radiated by the radiation-sensitive direction sensor is 0.4-2.0 μm.
11. The radiation-sensitive direction sensor according to claim 9, characterized in that: The material of the radiation-perspective interlayer includes at least one of silicon, germanium or sulfide glass, the radiation-isolating cavity is a vacuum-sealed cavity, and the wavelength range of the electromagnetic wave radiated by the radiation-sensing direction sensor is 8-12 μm.
12. The radiation-sensitive direction sensor according to claim 1, characterized in that: The radiation sensing unit comprises: a suspended radiation absorbing heat-resistance sheet body, wherein the radiation absorbing heat-resistance sheet body is made of vanadium oxide or amorphous silicon.
13. A method for preparing a radiation-sensitive direction sensor according to any one of claims 1 to 12, characterized in that: Includes steps: Providing a substrate, and setting a sensing signal reading and processing circuit on the substrate; A plurality of radiation sensing units are arranged on the sensing signal reading and processing circuit, and the substrate, the sensing signal reading and processing circuit, and the plurality of radiation sensing units thereon constitute an imaging substrate; Providing a side wall, one end of which is connected to the edge of the imaging substrate; A cover substrate is disposed at the other end of the side wall, wherein the cover substrate comprises a second through hole located at the center of the cover substrate; forming a continuous, hole-free radiation-perspective interlayer on the cover substrate; A radiation blocking layer is disposed on the radiation perspective interlayer, the radiation blocking layer comprises a first through hole located at the center of the radiation blocking layer, the position of the first through hole corresponds to the position of the second through hole, wherein the cover substrate, the radiation perspective interlayer and the radiation blocking layer constitute a radiation shielding cover sheet, and the first through hole and the second through hole constitute a diffraction micro through hole; A radiation bandpass filter cover is arranged on the radiation shielding cover sheet, and the radiation bandpass filter cover covers the diffraction micro-through hole.
14. A method for sensing direction angle using the radiation-sensitive direction sensor according to any one of claims 1 to 12, characterized in that: include: An onboard directional sensing Cartesian coordinate system (x, y, z) fixed to the aircraft is set on the aircraft; Taking the positive and negative sides of the x-axis, y-axis and z-axis of the onboard direction sensing Cartesian coordinate system as references, a radiation sensing direction sensor is respectively arranged in the six directions, and the six radiation sensing direction sensors all face the direction away from the aircraft; The six radiation-sensitive direction sensors sense the star radiation at any orientation relative to the aircraft.