Junction temperature detection method and device of power module

Abstract

The invention relates to the technical field of junction temperature detection, and provides a junction temperature detection method and device for a power module. The method comprises the following steps: determining the passive heating temperature of an IGBT (Insulated Gate Bipolar Transistor) according to the power loss of a diode in a power module and the coupling thermal resistance of the IGBT in the power module; determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupling thermal resistance of the diode; and determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the heating temperature of the IGBT and the heating temperature of the diode. The junction temperature detection method of the power module provided by the embodiment of the invention can improve the junction temperature detection accuracy of the power module.

Description

Technical Field

[0001] The present application relates to the technical field of junction temperature detection, and in particular to a method and device for detecting the junction temperature of a power module. Background Art

[0002] The power module is one of the main components in the electric drive system of new energy electric vehicles, which includes IGBT (Insulated Gate Bipolar Transistor) and diodes connected to both ends of the IGBT. The temperature of the power module is the main factor affecting the performance of the electric drive system, so it is usually necessary to detect the junction temperature of the power module.

[0003] In the related art, the junction temperature detection of the power module is to predict the junction temperature of the power module by detecting the loss of the power module. However, this method only considers the heat source of the power module itself, which affects the accuracy of the junction temperature detection. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems existing in the related art. To this end, the present application proposes a junction temperature detection method of a power module, which can improve the accuracy of the junction temperature detection of the power module.

[0005] A method for detecting junction temperature of a power module according to an embodiment of the first aspect of the present application includes:

[0006] Determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module;

[0007] Determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode;

[0008] Determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0009] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0010] By determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module, and determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode, and determining the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, the junction temperature detection of the power module takes into account the thermal coupling effect between the power module and other devices, thereby improving the accuracy of the junction temperature detection of the power module.

[0011] According to one embodiment of the present application, it also includes:

[0012] Determining the power loss of the IGBT according to the on-state loss of the IGBT and the switching loss of the IGBT;

[0013] The on-state loss of the IGBT is determined according to the saturation voltage drop of the IGBT, and the switching loss of the IGBT is determined according to the switching frequency of the IGBT, the energy loss of the IGBT during the switching process, the standard voltage of the power module and the bus voltage.

[0014] According to one embodiment of the present application, it also includes:

[0015] Determining the power loss of the diode according to the conduction loss of the diode and the switching loss of the diode;

[0016] Among them, the conduction loss of the diode is determined according to the saturation voltage drop of the diode, and the switching loss of the diode is determined according to the switching frequency of the IGBT, the energy loss of the diode during the IGBT switching process, the standard voltage of the power module and the bus voltage.

[0017] According to one embodiment of the present application, it also includes:

[0018] The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the diode and the test temperature of the IGBT in the thermal coupling test of the power module, and the test power loss of the diode.

[0019] According to one embodiment of the present application, it also includes:

[0020] The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the IGBT and the initial temperature of the diode in the thermal coupling test of the power module, and the test power loss of the IGBT.

[0021] According to one embodiment of the present application, it also includes:

[0022] The coupling thermal resistance of the diode is obtained according to the temperature difference between the test temperature of the diode and the initial temperature of the IGBT and the test power loss of the diode in the thermal coupling test of the power module.

[0023] According to an embodiment of the present application, determining the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode includes:

[0024] Obtaining a junction temperature detection result of the IGBT according to the passive heating temperature of the IGBT, the self-heating temperature of the IGBT, and the initial temperature of the coolant inlet connected to the power module;

[0025] Obtaining a junction temperature detection result of the diode according to the passive heating temperature of the diode, the self-heating temperature of the diode, and the initial temperature of the coolant inlet connected to the power module;

[0026] The junction temperature detection result of the power module is obtained according to the junction temperature detection result of the IGBT and the junction temperature detection result of the diode.

[0027] A junction temperature detection device for a power module according to an embodiment of the second aspect of the present application includes:

[0028] A first detection module, used to determine the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupling thermal resistance of the IGBT in the power module;

[0029] A second detection module is used to determine the passive heating temperature of the diode according to the power loss of the IGBT and the coupling thermal resistance of the diode;

[0030] A junction temperature detection module, used to determine the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0031] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0032] An electronic device according to an embodiment of the third aspect of the present application includes a processor and a memory storing a computer program, and when the processor executes the computer program, the method for detecting the junction temperature of the power module described in any of the above embodiments is implemented.

[0033] According to the computer-readable storage medium of the fourth aspect of the present application, a computer program is stored thereon, and when the computer program is executed by a processor, the junction temperature detection method of the power module described in any of the above embodiments is implemented.

[0034] The vehicle according to the fifth embodiment of the present application includes the electronic device described in the above embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A schematic diagram of a process flow of a junction temperature detection method for a power module provided in an embodiment of the present application;

[0037] Figure 2 is a schematic diagram of a thermal coupling test of a power module provided in an embodiment of the present application;

[0038] Figure 3 is a structural schematic diagram of a junction temperature detection device for a power module provided in an embodiment of the present application;

[0039] Figure 4 It is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] The following will introduce and illustrate in detail the junction temperature detection method and device of the power module provided in the embodiments of the present application through several specific embodiments.

[0042] The power module is one of the main components in the electric drive system of new energy electric vehicles, which includes IGBT (Insulated Gate Bipolar Transistor) and diodes connected to both ends of the IGBT. The temperature of the power module is the main factor affecting the performance of the electric drive system, so it is usually necessary to detect the junction temperature of the power module.

[0043] In the related art, the junction temperature detection of the power module is to predict the junction temperature of the power module by detecting the loss of the power module. However, this method only considers the heat source of the power module itself, but does not consider the thermal coupling effect of other devices on the power module, which affects the accuracy of the junction temperature detection.

[0044] To this end, in one embodiment, a method for detecting the junction temperature of a power module is provided, which is applied to a terminal device for detecting the junction temperature of the power module. The terminal device may include a mobile terminal, a desktop terminal or a vehicle terminal, and the vehicle terminal may be a VCU (Vehicle Control Unit) or MCU (Microcontroller Unit) of a vehicle.

[0045] like Figure 1 As shown, a junction temperature detection method of a power module provided in this embodiment includes:

[0046] Step 101, determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupling thermal resistance of the IGBT in the power module;

[0047] Step 102, determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupling thermal resistance of the diode;

[0048] Step 103, determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0049] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0050] In some embodiments, the power module includes an IGBT and a diode connected to both ends of the IGBT. The power loss of the IGBT and the power loss of the diode both include conduction loss and switching loss. Among them, the conduction loss is the static characteristic of the device itself, which refers to the power loss caused by the saturation voltage drop of the device, and the switching loss is the power loss of the device during the switching process.

[0051] In some embodiments, the conduction loss P of the IGBT in the power module can be determined in advance by performing a simulation test on the power module or by using the saturation voltage drop. con_IGBT and the conduction loss of the diode P con_DiodeAs for the switching loss of IGBT and diode, the switching loss P of IGBT can be determined by loss detection, such as oscilloscope detection. sw_IGBT and the diode switching loss P sw_Diode When determining the conduction loss P of the IGBT con_IGBT and switching loss P sw_IGBT After that, the power loss P of IGBT can be obtained. loss_IGBT =P con_IGBT +P sw_IGBT Similarly, the power loss P of the diode can be obtained loss_Diode =P con_Diode +P sw_Diode .

[0052] In some embodiments, the coupled thermal resistance R th,igbt_passive , refers to the thermal resistance generated by the connection between the IGBT and the device it is connected to. Similarly, the coupling thermal resistance of the diode R th,Diode_passive , refers to the thermal resistance generated by the connection method between the diode and the device it is connected to. The coupled thermal resistance of the IGBT and the diode can be determined by coupling thermal resistance measurement or simulation test.

[0053] The power loss P of the IGBT is obtained. loss_IGBT , diode power loss P loss_Diode 、The coupled thermal resistance R of IGBT th,igbt_passive And the diode's coupled thermal resistance R th,Diode_passive After that, the power loss P of the diode can be loss_Diode The coupled thermal resistance R of the IGBT in the power module th,igbt_passive , the passive heating temperature of IGBT is P loss_Diode ×R th,igbt_passive At the same time, according to the IGBT power loss P loss_IGBT and the diode’s coupled thermal resistance R th,Diode_passive , the passive heating temperature of the diode is P loss_IGBT ×R th,Diode_passive .

[0054] In some embodiments, after obtaining the power loss of the IGBT and the power loss of the diode, the self-heating temperature of the IGBT can be determined based on the power loss of the IGBT. For example, the self-heating temperature of the IGBT, that is, the temperature generated by the IGBT itself, can be tested under different power losses by conducting a conduction test and a switch test on the IGBT without an external heat source, so as to obtain a fitting function model of the power loss and the self-heating temperature of the IGBT. After obtaining the fitting model, the acquired power loss of the IGBT can be input into the fitting function model to obtain the self-heating temperature of the IGBT. Similarly, the fitting function model of the power loss and the self-heating temperature of the diode can be obtained by testing, and the acquired power loss of the diode can be input into the fitting function model to obtain the self-heating temperature of the diode.

[0055] Alternatively, the IGBT’s self-thermal resistance R can be detected first. th,igbt_Active And the diode's self-thermal resistance R th,diode_Active , where self-thermal resistance refers to the thermal resistance generated when there is no external heat source and the heat generated by the internal loss of the device cannot be dissipated in time, causing the internal temperature of the device to rise. th,igbt_Active And the diode's self-thermal resistance R th,diode_Active It can be pre-calibrated through factory test of power module or self-thermal resistance test. th,igbt_Active And the diode's self-thermal resistance R th,diode_Active After that, the self-thermal resistance of IGBT and the power loss P of IGBT can be calculated. loss_IGBT , to get the IGBT's own heating temperature P loss_IGBT ×R th,igbt_Active , and according to the diode's self-thermal resistance R th,diode_Active and the diode power loss P loss_Diode , to get the diode's own heating temperature P loss_Diode ×R th,diode_Active .

[0056] After obtaining the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, the passive heating temperature of the IGBT and the self-heating temperature of the IGBT can be superimposed to obtain the junction temperature detection result of the IGBT, and the passive heating temperature of the diode and the self-heating temperature of the diode can be superimposed to obtain the junction temperature detection result of the diode, so that the junction temperature detection result of the IGBT and the junction temperature detection result of the diode can be determined as the junction temperature detection result of the power module.

[0057] By determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module, and determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode, and determining the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, the junction temperature detection of the power module takes into account the thermal coupling effect between the power module and other devices, thereby improving the accuracy of the junction temperature detection of the power module.

[0058] In order to improve the accuracy of the acquired IGBT power loss and to improve the accuracy of junction temperature detection, in some embodiments, the method further includes: determining the power loss of the IGBT based on the on-state loss of the IGBT and the switching loss of the IGBT; wherein, the on-state loss of the IGBT is determined based on the saturation voltage drop of the IGBT, and the switching loss of the IGBT is determined based on the switching frequency of the IGBT, the energy loss of the IGBT during the switching process, the standard voltage of the power module, and the bus voltage.

[0059] In some embodiments, a bridge circuit including a power module can be built based on the power electronics simulation software Simpoler, such as a half-bridge circuit composed of multiple power modules. The saturation voltage drop VCE(ON) of the IGBT is obtained through the bridge circuit equipped with the simulation software, so as to determine the conduction loss caused by the saturation voltage drop of the IGBT, that is, the on-state loss of the IGBT, according to the conduction loss calculation formula of the power device.

[0060] As for the switching loss of IGBT, the double pulse test method can be used to obtain the energy loss of IGBT during the switching process, so as to determine the switching loss of IGBT based on the switching frequency of IGBT, the energy loss of IGBT during the switching process, the standard voltage of the power module and the bus voltage.

[0061] For example, the energy loss E of IGBT during switching is sw,IGBT for:

[0062]

[0063] Among them, E on,IGBT Indicates the energy loss when the IGBT is turned on during the switching process, E off,IGBT represents the energy loss when the IGBT is turned off during the switching process, i(t) represents the three-phase current connected to the power module, I nom Indicates the rated current of the power module, V dc Indicates the bus voltage to which the power module is connected.

[0064] After obtaining the energy loss of the IGBT during the switching process, the switching loss P of the IGBT can be obtained. sw_IGBT for:

[0065] P sw_IGBT =f sw ×(E on,IGBT +E off,IGBT )×V dc / V dc_norm

[0066] Among them, f sw Indicates the switching frequency of the IGBT, V dc_norm Indicates the standard voltage of the power module.

[0067] In order to improve the accuracy of the power loss of the diode obtained, so as to improve the accuracy of junction temperature detection, in some embodiments, the method further includes: determining the power loss of the diode based on the conduction loss of the diode and the switching loss of the diode; wherein the conduction loss of the diode is determined based on the saturation voltage drop of the diode, and the switching loss of the diode is determined based on the switching frequency of the IGBT, the energy loss of the diode during the switching process of the IGBT, the standard voltage of the power module and the bus voltage.

[0068] In some embodiments, a bridge circuit including a power module can be built based on the power electronics simulation software Simpoler, such as a half-bridge circuit composed of multiple power modules. The saturation voltage drop of the diode of the power module is obtained through the bridge circuit equipped with the simulation software, so as to determine the conduction loss caused by the saturation voltage drop of the diode, that is, the conduction loss of the diode, according to the conduction loss calculation formula of the power device.

[0069] As for the switching loss of the diode, the double pulse test method can be used to obtain the energy loss of the diode during the switching process. The switching loss of the diode can be determined based on the switching frequency of the IGBT, the energy loss of the diode during the IGBT switching process, the standard voltage of the power module, and the bus voltage.

[0070] Exemplarily, during the IGBT switching process, the diode will generate reverse energy recovery energy consumption, so that the energy loss generated by the diode during the IGBT switching process is:

[0071]

[0072] Among them, E sw,Diode Represents the energy loss of the diode during the IGBT switching process, V nom Indicates the rated voltage of the power module, E rec Represents the reverse energy recovery energy consumption of the diode, I cmIndicates the maximum operating current of the diode.

[0073] After obtaining the energy loss of the diode during the IGBT switching process, the switching loss P of the diode can be obtained. sw_Diode for:

[0074] P sw_Diode =f sw ×(E on,Diode +E off,Diode )×V dc / V dc_norm

[0075] After obtaining the power loss of the IGBT and the power loss of the diode, the passive heating temperature of the IGBT can be determined based on the power loss of the diode and the coupled thermal resistance of the IGBT in the power module, and the passive heating temperature of the diode can be determined based on the power loss of the IGBT and the coupled thermal resistance of the diode.

[0076] In order to more accurately determine the coupled thermal resistance of the IGBT to improve the accuracy of the junction temperature detection of the power module, in some embodiments, the method further includes:

[0077] The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the diode and the test temperature of the IGBT in the thermal coupling test of the power module, and the test power loss of the diode.

[0078] In some embodiments, a bridge circuit can be constructed by using multiple power modules with the same product information, such as using six power modules S1-S6 to construct a three-phase full-bridge circuit, and the three-phase full-bridge circuit is connected to a voltage source U dc , and connect the collector of each power module in the three-phase full-bridge circuit to the power supply Power supply, such as Figure 2 At the same time, the temperature of the three-phase full-bridge circuit is adjusted by the coolant, and the IGBT junction temperature corresponding to the thermal coupling effect under different water inlet flow rates is tested by adjusting the flow rate of the coolant water inlet.

[0079] For example, Figure 2 As shown, the positive voltage can be applied to S1, S2, S4, S5, and S6 respectively, and the negative voltage can be applied to the power module S3 by supplying the power supply 10. The S3 thyristor is in the upper bridge arm locked state, and the lower bridge arm thyristor is in the working state. At this time, the IGBT of the power module S3 is not working. When the PWM pulse wave is applied to each power module, the thermal resistance affected by the thermal coupling other than the self-heating of the IGBT of the power module S3 can be obtained, that is, the coupled thermal resistance of the IGBT. Through testing, the formula △T=P*R coupling, to fit the computational model of the coupled thermal resistance of the IGBT, the computational model of the coupled thermal resistance of the IGBT obtained at this time is:

[0080] R th,igbt_Passive =(T diode -T igbt ) / P diode_loss

[0081] Among them, R th,igbt_Passive Represents the coupled thermal resistance of the IGBT in the power module, T diode It represents the test temperature of the diode in the power module, that is, the temperature of the diode measured in the thermal coupling test, T igbt Indicates the test temperature of the IGBT, that is, the temperature of the IGBT measured in the thermal coupling test, P diode_loss Represents the test power loss of the diode, that is, the power loss of the diode measured in the thermal coupling test.

[0082] Through thermal coupling test, the test temperature of the diode, the test temperature of the IGBT and the test power loss of the diode can be measured. Substituting the test temperature of the diode, the test temperature of the IGBT and the test power loss of the diode into the above formula, the coupling thermal resistance R of the IGBT can be obtained. th,igbt_Passive .

[0083] In addition, the self-thermal resistance R of the IGBT can be determined by thermal coupling test. th,igbt_Active ,Right now:

[0084] R th,igbt_Active =(T igbt -T Coolant ) / P igbt_loss

[0085] Among them, T Coolant Indicates the initial temperature of the coolant inlet, P igbt_loss Represents the test power loss of the IGBT, that is, the power loss of the IGBT measured in the thermal coupling test.

[0086] In this way, the coupled thermal resistance of the IGBT can be determined through the thermal coupling test, so as to improve the accuracy of the subsequent junction temperature detection of the power module using the coupled thermal resistance.

[0087] In some embodiments, the obtained calculation model of the coupling thermal resistance of the IGBT may also be:

[0088] R th,igbt_Passive =(T igbt -T diode_initial ) / P igbt_loss

[0089] Among them, T diode_initial Indicates the initial temperature of the diode.

[0090] Based on this, the test temperature of the IGBT, the initial temperature of the diode and the test power loss of the IGBT in the thermal coupling test of the power module can be obtained. The temperature difference between the test temperature of the IGBT and the initial temperature of the diode, as well as the test power loss of the IGBT, can be substituted into the above calculation model to obtain the coupled thermal resistance of the IGBT.

[0091] In order to more accurately determine the coupled thermal resistance of the diode to improve the accuracy of junction temperature detection of the power module, in some embodiments, the method further includes: obtaining the coupled thermal resistance of the diode based on the temperature difference between the test temperature of the diode and the initial temperature of the IGBT in the thermal coupling test of the power module, and the test power loss of the diode.

[0092] In some embodiments, through the thermal coupling test of the power module, in addition to obtaining the coupled thermal resistance of the IGBT in the power module, the coupled thermal resistance of the diode in the power module can also be obtained. For example, through the thermal coupling test, the computational model of the coupled thermal resistance of the diode can be fitted, and the computational model of the coupled thermal resistance of the diode obtained at this time is:

[0093] R th,Diode_Passive =(T diode -T igbt_initial ) / P diode_loss

[0094] Among them, R th,Diode_Passive Represents the coupled thermal resistance of the diode in the power module, T igbt_initial Indicates the initial temperature of the IGBT in the power module.

[0095] Through thermal coupling test, the test temperature of the diode, the initial temperature of the IGBT and the test power loss of the diode can be measured. By substituting the temperature difference between the test temperature of the diode and the initial temperature of the IGBT, as well as the test power loss of the diode into the above formula, the coupling thermal resistance R of the diode can be obtained. th,Diode_Passive .

[0096] In addition, the self-thermal resistance R of the diode can be determined by thermal coupling test. th,Diode_Active ,Right now:

[0097] R th,Diode_Active =(T Diode -T Coolant ) / P Diode_loss

[0098] In this way, the coupled thermal resistance of the diode can be determined through the thermal coupling test, so as to improve the accuracy of the subsequent junction temperature detection of the power module using the coupled thermal resistance.

[0099] After determining the coupled thermal resistance of the IGBT in the power module and the coupled thermal resistance of the diode, the power loss P of the IGBT in the power module can be calculated. loss_IGBT , diode power loss P loss_Diode 、The coupled thermal resistance R of IGBT th,igbt_passive And the diode's coupled thermal resistance R th,Diode_passive , the passive heating temperature of IGBT is P loss_Diode ×R th,igbt_passive , and the passive heating temperature of the diode is P loss_IGBT ×R th,Diode_passive At the same time, based on the self-thermal resistance R th,igbt_Active And the diode's self-thermal resistance R th,diode_Active , to determine the IGBT's own heating temperature P loss_IGBT ×R th,igbt_Active , and the diode's own heating temperature P loss_Diode ×R th,diode_Active The passive heating temperature of the IGBT is superimposed with the self-heating temperature of the IGBT to obtain the junction temperature detection result of the IGBT, and the passive heating temperature of the diode is superimposed with the self-heating temperature of the diode to obtain the junction temperature detection result of the diode, so that the junction temperature detection result of the IGBT and the junction temperature detection result of the diode are determined as the junction temperature detection result of the power module.

[0100] Considering that the power module is usually connected to a coolant for cooling, in order to make the junction temperature detection of the power module more accurate, in some embodiments, the junction temperature detection result of the power module is determined according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, including:

[0101] Obtaining a junction temperature detection result of the IGBT according to the passive heating temperature of the IGBT, the self-heating temperature of the IGBT, and the initial temperature of the coolant inlet connected to the power module;

[0102] Obtaining a junction temperature detection result of the diode according to the passive heating temperature of the diode, the self-heating temperature of the diode, and the initial temperature of the coolant inlet connected to the power module;

[0103] The junction temperature detection result of the power module is obtained according to the junction temperature detection result of the IGBT and the junction temperature detection result of the diode.

[0104] In some embodiments, after obtaining the passive heating temperature P of the IGBT loss_Diode ×R th,igbt_passive The IGBT's own heating temperature P loss_IGBT ×Rth,igbt_Active After that, the initial temperature of the coolant inlet connected to the power module can be detected by temperature detection, such as by a temperature sensor, to combine the initial temperature T of the coolant inlet coolant , to get the IGBT junction temperature detection result T j,IGBT for:

[0105] T j,IGBT =T coolant +P loss_Diode ×R th,igbt_passive +P loss_IGBT ×R th,igbt_Active

[0106] Similarly, when the passive heating temperature P of the diode is obtained loss_IGBT ×R th,Diode_passive and the diode's own heating temperature P loss_Diode ×R th,diode_Active After that, combined with the initial temperature T of the coolant inlet coolant , the junction temperature detection result of the diode can be determined j,Diode for:

[0107] T j,Diode =T coolant +P loss_IGBT ×R th,Diode_passive +P loss_Diode ×R th,diode_Active

[0108] After the junction temperature detection results of the IGBT and the diode are determined, the junction temperature detection result of the IGBT and the junction temperature detection result of the diode can be determined as the junction temperature detection result of the power module.

[0109] The junction temperature detection device of the power module provided in the present application is described below. The junction temperature detection device of the power module described below and the junction temperature detection method of the power module described above can be referred to each other.

[0110] In one embodiment, if Figure 3 As shown, a junction temperature detection device for a power module is provided, comprising:

[0111] A first detection module 210, configured to determine the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupling thermal resistance of the IGBT in the power module;

[0112] A second detection module 220, configured to determine the passive heating temperature of the diode according to the power loss of the IGBT and the coupling thermal resistance of the diode;

[0113] A junction temperature detection module 230, configured to determine a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0114] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0115] By determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module, and determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode, and determining the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, the junction temperature detection of the power module takes into account the thermal coupling effect between the power module and other devices, thereby improving the accuracy of the junction temperature detection of the power module.

[0116] In one embodiment, the first detection module 210 is further configured to:

[0117] Determining the power loss of the IGBT according to the on-state loss of the IGBT and the switching loss of the IGBT;

[0118] The on-state loss of the IGBT is determined according to the saturation voltage drop of the IGBT, and the switching loss of the IGBT is determined according to the switching frequency of the IGBT, the energy loss of the IGBT during the switching process, the standard voltage of the power module and the bus voltage.

[0119] In one embodiment, the second detection module 220 is further configured to:

[0120] Determining the power loss of the diode according to the conduction loss of the diode and the switching loss of the diode;

[0121] Among them, the conduction loss of the diode is determined according to the saturation voltage drop of the diode, and the switching loss of the diode is determined according to the switching frequency of the IGBT, the energy loss of the diode during the IGBT switching process, the standard voltage of the power module and the bus voltage.

[0122] In one embodiment, the first detection module 210 is further configured to:

[0123] The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the diode and the test temperature of the IGBT in the thermal coupling test of the power module, and the test power loss of the diode.

[0124] In one embodiment, the first detection module 210 is further configured to:

[0125] The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the IGBT and the initial temperature of the diode in the thermal coupling test of the power module, and the test power loss of the IGBT.

[0126] In one embodiment, the second detection module 220 is further configured to:

[0127] The coupling thermal resistance of the diode is obtained according to the temperature difference between the test temperature of the diode and the initial temperature of the IGBT and the test power loss of the diode in the thermal coupling test of the power module.

[0128] In one embodiment, the junction temperature detection module 230 is specifically used for:

[0129] Obtaining a junction temperature detection result of the IGBT according to the passive heating temperature of the IGBT, the self-heating temperature of the IGBT, and the initial temperature of the coolant inlet connected to the power module;

[0130] Obtaining a junction temperature detection result of the diode according to the passive heating temperature of the diode, the self-heating temperature of the diode, and the initial temperature of the coolant inlet connected to the power module;

[0131] The junction temperature detection result of the power module is obtained according to the junction temperature detection result of the IGBT and the junction temperature detection result of the diode.

[0132] Figure 4 An example of a physical structure diagram of an electronic device is shown in FIG. Figure 4 As shown, the electronic device may include: a processor 810, a communication interface 820, a memory 830 and a communication bus 840, wherein the processor 810, the communication interface 820, and the memory 830 communicate with each other through the communication bus 840. The processor 810 may call a computer program in the memory 830 to execute a junction temperature detection method of a power module, for example, including:

[0133] Determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module;

[0134] Determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode;

[0135] Determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0136] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0137] In addition, the logic instructions in the above-mentioned memory 830 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when it is sold or used as an independent product. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art, and the computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the various embodiments of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes.

[0138] On the other hand, an embodiment of the present application further provides a storage medium, the storage medium includes a computer program, the computer program can be stored on a non-transitory computer-readable storage medium, when the computer program is executed by a processor, the computer can execute the junction temperature detection method of the power module provided in the above embodiments, for example, including:

[0139] Determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module;

[0140] Determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode;

[0141] Determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode;

[0142] The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

[0143] On the other hand, an embodiment of the present application further provides a vehicle, which includes the electronic device as described in the above embodiment.

[0144] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, i.e., they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Those of ordinary skill in the art may understand and implement it without creative effort.

[0145] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0146] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for detecting junction temperature of a power module, characterized in that: include: Determining the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupled thermal resistance of the IGBT in the power module; Determining the passive heating temperature of the diode according to the power loss of the IGBT and the coupled thermal resistance of the diode; Determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode; The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

2. The method for detecting junction temperature of a power module according to claim 1, characterized in that: Also includes: Determining the power loss of the IGBT according to the on-state loss of the IGBT and the switching loss of the IGBT; The on-state loss of the IGBT is determined according to the saturation voltage drop of the IGBT, and the switching loss of the IGBT is determined according to the switching frequency of the IGBT, the energy loss of the IGBT during the switching process, the standard voltage of the power module and the bus voltage.

3. The junction temperature detection method of a power module according to claim 1 or 2, characterized in that: Also includes: Determining the power loss of the diode according to the conduction loss of the diode and the switching loss of the diode; Among them, the conduction loss of the diode is determined according to the saturation voltage drop of the diode, and the switching loss of the diode is determined according to the switching frequency of the IGBT, the energy loss of the diode during the IGBT switching process, the standard voltage of the power module and the bus voltage.

4. The method for detecting junction temperature of a power module according to claim 1, characterized in that: Also includes: The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the diode and the test temperature of the IGBT in the thermal coupling test of the power module, and the test power loss of the diode.

5. The method for detecting junction temperature of a power module according to claim 1, characterized in that: Also includes: The coupling thermal resistance of the IGBT is obtained according to the temperature difference between the test temperature of the IGBT and the initial temperature of the diode in the thermal coupling test of the power module, and the test power loss of the IGBT.

6. The method for detecting junction temperature of a power module according to claim 1, 4 or 5, characterized in that: Also includes: The coupling thermal resistance of the diode is obtained according to the temperature difference between the test temperature of the diode and the initial temperature of the IGBT and the test power loss of the diode in the thermal coupling test of the power module.

7. The method for detecting junction temperature of a power module according to claim 1, characterized in that: Determining a junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode, including: Obtaining a junction temperature detection result of the IGBT according to the passive heating temperature of the IGBT, the self-heating temperature of the IGBT, and the initial temperature of the coolant inlet connected to the power module; Obtaining a junction temperature detection result of the diode according to the passive heating temperature of the diode, the self-heating temperature of the diode, and the initial temperature of the coolant inlet connected to the power module; The junction temperature detection result of the power module is obtained according to the junction temperature detection result of the IGBT and the junction temperature detection result of the diode.

8. A junction temperature detection device for a power module, characterized in that: include: A first detection module, used to determine the passive heating temperature of the IGBT according to the power loss of the diode in the power module and the coupling thermal resistance of the IGBT in the power module; A second detection module is used to determine the passive heating temperature of the diode according to the power loss of the IGBT and the coupling thermal resistance of the diode; A junction temperature detection module, used to determine the junction temperature detection result of the power module according to the passive heating temperature of the IGBT, the passive heating temperature of the diode, the self-heating temperature of the IGBT and the self-heating temperature of the diode; The self-heating temperature of the IGBT is determined according to the power loss of the IGBT, and the self-heating temperature of the diode is determined according to the power loss of the diode.

9. An electronic device comprising a processor and a memory storing a computer program, characterized in that: When the processor executes the computer program, the junction temperature detection method of the power module according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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