Quality judgment method and device for simulation semiconductor quantum dot device

Abstract

The invention relates to the technical field of quantum computers, in particular to a quality judgment method and device for a simulated semiconductor quantum dot device, and the method comprises the steps: simulating the semiconductor quantum dot device in a simulation mode, then determining a plurality of wave functions corresponding to a limiting potential distribution diagram of the simulated semiconductor quantum dot device, and obtaining a plurality of wave functions corresponding to the limiting potential distribution diagram; constructing a plurality of wave function images corresponding to the wave functions; whether the simulation semiconductor quantum dot device can form the quantum dots or not is judged by determining the state of the wave function corresponding to the limiting potential of the simulation semiconductor quantum dot device, and when the simulation semiconductor quantum dot device can form the quantum dots, the quality of the simulation semiconductor quantum dot device meets the requirement. Production can be carried out according to the simulation semiconductor quantum dot device, the yield of the semiconductor quantum dot device in actual production is improved, and the cost is saved.

Description

Technical Field

[0001] The present invention relates to the field of quantum computer technology, and in particular to a quality judgment method and device for simulating semiconductor quantum dot devices. Background Art

[0002] Semiconductor quantum dot devices are made by making a series of electrodes on the surface of semiconductor heterojunction or MOS (metal oxide semiconductor), and by adjusting the electrode voltage, electrons are bound in a very small area to form quantum dots. However, in the semiconductor quantum dot devices actually produced, many semiconductor quantum dot devices cannot form quantum dots, and the yield rate of semiconductor quantum dot devices is low during actual production. In order to find feasible semiconductor quantum dot devices, in actual production, they can only be screened by mass-producing samples of semiconductor quantum dot devices, which will result in extremely high production costs. Summary of the invention

[0003] The present invention provides a quality judgment method and device for simulating semiconductor quantum dot devices, which are used to solve the problems of low yield rate and extremely high production cost of semiconductor quantum dot devices during experimental production.

[0004] The embodiment of this specification provides a method for judging the quality of a simulated semiconductor quantum dot device, comprising:

[0005] Determine a plurality of wave functions corresponding to the confining potential distribution diagram of the simulated semiconductor quantum dot device, and construct a plurality of wave function images corresponding to the wave functions;

[0006] Determine the maximum value of the wave function in the wave function image and the value of the wave function on the boundary, and preset a weight for the maximum value of the wave function;

[0007] Comparing the value of the wave function at the boundary in the wave function image with the maximum value of the wave function after preset weights, to determine the states of the plurality of wave functions;

[0008] The quality of the simulated semiconductor quantum dot device is determined based on the states of the plurality of wave functions.

[0009] Optionally, before determining a plurality of wave functions corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device, the method includes:

[0010] Call the three-dimensional finite element mesh generator to draw the simulated semiconductor quantum dot device;

[0011] Simulation parameters are set for the simulated semiconductor quantum dot device.

[0012] Optionally, the calculating a wave function corresponding to the confinement potential distribution diagram of the simulated semiconductor quantum dot device includes:

[0013] Calculating the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and a preset potential distribution function;

[0014] constructing a potential distribution map according to the potential distribution data;

[0015] A potential distribution diagram of a limited area selected from the potential distribution diagram of the simulated semiconductor quantum dot device to obtain a restricted potential distribution diagram;

[0016] The Schrödinger equation solver is called to calculate the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device.

[0017] Optionally, the preset potential distribution function includes a Poisson equation;

[0018] The calculating the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and the preset potential distribution function comprises:

[0019] The potential distribution data of the simulated semiconductor quantum dot device is calculated according to the simulation parameters and the Poisson's equation.

[0020] Optionally, determining the states of the plurality of wave functions comprises:

[0021] When the values ​​of the wave functions on the boundary in the wave function image are all less than the maximum value of the wave function after the preset weight, the wave function is in a bound state;

[0022] When the value of the wave function at the boundary in the wave function image is greater than or equal to the maximum value of the wave function after preset weights, the wave function is in a scattering state.

[0023] Optionally, determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions comprises:

[0024] When there is a wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality;

[0025] When there is no wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device cannot form quantum dots and the quality of the simulated semiconductor quantum dot device is unqualified.

[0026] Optionally, after determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions, the method further comprises:

[0027] The set simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

[0028] The embodiment of this specification also provides a quality judgment device for a simulated semiconductor quantum dot device, comprising:

[0029] A wave function image construction module, used to determine a plurality of wave functions corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device, and to construct a plurality of wave function images corresponding to the wave functions;

[0030] A value determination module, used to determine the maximum value of the wave function in the wave function image, the value of the wave function on the boundary, and preset a weight for the maximum value of the wave function;

[0031] A wave function state determination module, used for comparing the value of the wave function at the boundary in the wave function image with the maximum value of the wave function after preset weights, to determine the states of the plurality of wave functions;

[0032] A quality determination module is used to determine the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions.

[0033] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the method described above.

[0034] A storage medium, characterized in that a computer program is stored in the storage medium, and the computer program is configured to execute the above-mentioned method when running.

[0035] Its beneficial effects are as follows: the present invention simulates a semiconductor quantum dot device by means of simulation, and then determines a plurality of wave functions corresponding to a limiting potential distribution diagram of the simulated semiconductor quantum dot device, and constructs a plurality of wave function images corresponding to the wave functions; by determining the state of the wave function corresponding to the limiting potential of the simulated semiconductor quantum dot device, it is judged whether the simulated semiconductor quantum dot device can form quantum dots. When the simulated semiconductor quantum dot device can form quantum dots, the quality of the simulated semiconductor quantum dot device meets the requirements, and production can be carried out based on the simulated semiconductor quantum dot device, thereby improving the yield of semiconductor quantum dot devices in actual production and saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0037] Figure 1 A schematic diagram of a one-dimensional finite depth square potential well provided in this specification;

[0038] Figure 2 A schematic diagram of a wave function image provided in the embodiments of this specification;

[0039] Figure 3 Another schematic diagram of a wave function image provided in an embodiment of this specification;

[0040] Figure 4 Another schematic diagram of a wave function image provided in an embodiment of this specification;

[0041] Figure 5 Another schematic diagram of a wave function image provided in an embodiment of this specification;

[0042] Figure 6 Another schematic diagram of a wave function image provided in an embodiment of this specification;

[0043] Figure 7 A schematic diagram of the principle of a method for judging the quality of a simulated semiconductor quantum dot device of a quantum bit driving line provided in an embodiment of this specification;

[0044] Figure 8 A schematic diagram of the structure of a quality judgment device for a simulated semiconductor quantum dot device of a quantum bit driving line provided in an embodiment of this specification;

[0045] Fig. 9 A schematic diagram of the structure of an electronic device provided in an embodiment of this specification;

[0046] Fig.10 A schematic diagram of a computer-readable medium provided for an embodiment of this specification. DETAILED DESCRIPTION

[0047] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but should not be construed as limiting the present invention.

[0048] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but should not be construed as limiting the present invention.

[0049] It should be noted that the relative arrangement of components and steps, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0050] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

[0051] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0052] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0053] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0054] The criterion for whether a semiconductor quantum dot device can form a quantum dot is whether the wave function solved by the Schrödinger equation has a bound state. The characteristics of the bound state are: a. The energy level is discrete, and b. The wave function is localized in a limited range. However, in the actual QTCAD (Quantum-Technology Computer-Aided Design) simulation, due to the limitation of computing power, we can only select a limited area for simulation. Since the area is limited, the energy level solved by the Schrödinger equation is always discrete, and it cannot be used to determine the bound state. Figure 1 The figure shows a one-dimensional finite-depth square potential well with a potential well depth of 50 eV. The analytical solution tells us that only quantum states with energies below infinity are bound states, while quantum states with energies greater than 50 eV belong to extended states. Figure 1 The horizontal axis represents the width of the selected finite area, and the vertical axis represents the potential well depth energy value.

[0055] In the numerical method, we can only select a finite area. When the energy of the quantum state is less than 50eV, these quantum states belong to bound states, the energy is discrete, and the wave function is localized. At this time, the energy and wave function in the numerical results are close to the analytical solution, such as Figure 2 , Figure 3 , Figure 4 When the quantum state energy is greater than 50 eV, the analytical solution tells us that the quantum state is a scattered state and the energy should be some continuous values. However, the numerical solution can only give discrete energy, such as Figure 5 , Figure 6 As shown. From the above analysis, we can know that we cannot directly use analytical solutions or numerical solutions to determine the state of the wave function solved by the Schrödinger equation, nor can we determine whether the semiconductor quantum dot device can form a quantum dot, so we cannot guarantee that the quality of the produced semiconductor quantum dot device is qualified. Therefore, a quality judgment method and device for simulating semiconductor quantum dot devices are proposed. Among them, Figures 2 to 6 The horizontal axis represents the width of the selected finite area, the vertical axis represents the value of the wave function, and the eigenvalue is the energy value of the quantum state.

[0056] Reference Figure 7A schematic diagram of the principle of a method for judging the quality of a simulated semiconductor quantum dot device provided in an embodiment of this specification includes:

[0057] S101: determining a plurality of wave functions corresponding to the confining potential distribution diagram of the simulated semiconductor quantum dot device, and constructing a plurality of wave function images corresponding to the wave functions;

[0058] In an optional embodiment, before determining the multiple wave functions corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device, it is necessary to call a three-dimensional finite element mesh generator to draw the simulated semiconductor quantum dot device, and then set simulation parameters for the simulated semiconductor quantum dot device, the simulation parameters including electrode size, thickness of each layer of material in the simulated semiconductor quantum dot device, material of each layer of material, etc.; calculate the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and the Poisson equation in the preset potential distribution function, and display the potential distribution data in the form of a potential distribution diagram on the QTCAD simulation interface, and then, select the potential distribution diagram of a limited area in the potential distribution diagram of the simulated semiconductor quantum dot device to obtain the confined potential distribution diagram, and calculate the Schrödinger equation by calling the Schrödinger equation solver in combination with the potential distribution data in the confined potential distribution diagram to obtain the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device. Taking three-dimensional space as an example, the wave function is expressed as Wherein, i is the number of wave functions, and (x, y, z) is the position coordinate of the wave function in three-dimensional space. The online simulation of semiconductor quantum dot devices is realized by the above-mentioned simulation method, which avoids the cost loss caused by offline production. When the simulated semiconductor quantum dot device can form quantum dots in the subsequent judgment, production can be carried out based on the simulated semiconductor quantum dot device, thereby improving the yield of semiconductor quantum dot devices in actual production and saving costs.

[0059] S102: determining the maximum value of the wave function in the wave function image and the value of the wave function on the boundary, and presetting a weight for the maximum value of the wave function;

[0060] S103: Compare the value of the wave function on the boundary in the wave function image with the maximum value of the wave function after preset weights to determine the states of the plurality of wave functions.

[0061] Optionally, determining the states of the plurality of wave functions comprises:

[0062] When the values ​​of the wave functions on the boundary in the wave function image are all less than the maximum value of the wave function after the preset weight, the wave function is in a bound state;

[0063] When the value of the wave function at the boundary in the wave function image is greater than or equal to the maximum value of the wave function after preset weights, the wave function is in a scattering state.

[0064] In an optional embodiment, still taking three-dimensional space as an example, for each wave function First calculate the wave function The corresponding square of the three-dimensional space coordinates Then, in multiple modular squares Find the largest square of the modulus, that is, the maximum value of the wave function in the wave function image, and record the maximum value of the wave function in the wave function image as And the maximum value of the wave function in the wave function image Set the weight λ; then, find the value of the wave function on the boundary in the wave function image, that is, the square of the modulus of the wave function image on the boundary in three-dimensional space, recorded as Afterwards, compare With λ Since the wave function image is located at the square of the modulus on the boundary in three-dimensional space More than one, so you need to and the maximum value λ of the wave function in the wave function image For comparison, Both are less than λ When , the wave function is in a bound state; when There exists a value greater than or equal to λ When , the wave function is in a scattering state; the above method is used to determine the states of multiple wave functions, thereby providing data support for subsequent determination of whether the simulated semiconductor quantum dot device can form a quantum dot, wherein λ is a number close to 0 and can be set according to demand.

[0065] S104: Determine the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions.

[0066] Optionally, determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions comprises:

[0067] When there is a wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality;

[0068] When there is no wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device cannot form quantum dots and the quality of the simulated semiconductor quantum dot device is unqualified.

[0069] In an alternative embodiment, when i wave functions There is a wave function in the state When the state is in a bound state, it means that the simulated semiconductor quantum dot device can form quantum dots, and the simulated semiconductor quantum dot device is of qualified quality. The corresponding finished product can be made based on the simulated semiconductor quantum dot device, so that the semiconductor quantum dot device actually produced can form quantum dots, improve the yield of semiconductor quantum dot devices in actual production, and save costs; when the i wave function When the states are not in bound states, the simulated semiconductor quantum dot device cannot be like a quantum dot, the quality of the simulated semiconductor quantum dot device is unqualified, and the relevant data of the simulated semiconductor quantum dot device cannot be used as a basis for actual production, thereby indirectly improving the yield of the actual production of semiconductor quantum dot devices.

[0070] Optionally, after determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions, the method further comprises:

[0071] The set simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

[0072] In an alternative embodiment, when i wave functions When the states of are not in bound states, the simulated semiconductor quantum dot device cannot be like a quantum dot, the simulated semiconductor quantum dot device is of unqualified quality and cannot meet actual needs. At this time, we can optimize the simulated semiconductor quantum dot device by adjusting the simulation parameters of the simulated semiconductor quantum dot device in the QTCAD simulation interface until there is a wave function The state is in a bound state, thereby greatly reducing the probability of defective semiconductor quantum dot devices in actual production.

[0073] In an optional embodiment, taking one-dimensional space as an example, referring to Figure 2-5 It is a multiple wave function image corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device in one-dimensional space. At this time, the wave function The maximum value of is |-0.4| 2 , the wave function image in one-dimensional space is at the boundary of the square of the modulus is |-0.01| 2 , the weight λ is 0.1, then the wave function image in one-dimensional space is at the square of the modulus on the boundary Less than λ The wave function is in a bound state, so that the simulated semiconductor quantum dot device can form a quantum dot. Similarly, Figure 3 , Figure 4 The corresponding wave function is also in a bound state; although Figure 5 Medium wave function The maximum value of is |-0.62| 2, the wave function image in one-dimensional space is at the boundary of the square of the modulus is |-0.65| 2 、|0.65| 2 , the weight λ is 0.1, then the wave function image in one-dimensional space is at the square of the modulus on the boundary Greater than λ The wave function In the scattering state, similarly, Figure 6 The corresponding wave function is also in a scattered state, but since the basis for whether the simulated semiconductor quantum dot device can form a quantum dot is that there is a bound state wave function to form a quantum dot, the simulated semiconductor quantum dot device in this embodiment can form a quantum dot and meet the quality requirements for producing semiconductor quantum dot devices. It should be noted that this embodiment is only described using one-dimensional space as a representative. In practice, the state of the wave function is generally judged in three-dimensional space. The present invention does not limit the spatial dimension, and the method of the present invention can be used to achieve quality judgment of simulated semiconductor quantum dot devices in different spatial dimensions.

[0074] The present invention simulates a semiconductor quantum dot device by means of simulation, then determines a plurality of wave functions corresponding to a limiting potential distribution diagram of the simulated semiconductor quantum dot device, and constructs a plurality of wave function images corresponding to the wave functions; by determining the state of the wave function corresponding to the limiting potential of the simulated semiconductor quantum dot device, it is judged whether the simulated semiconductor quantum dot device can form quantum dots. When the simulated semiconductor quantum dot device can form quantum dots, the quality of the simulated semiconductor quantum dot device meets the requirements, and production can be carried out based on the simulated semiconductor quantum dot device, thereby improving the yield of semiconductor quantum dot devices in actual production and saving costs.

[0075] Reference Figure 8 A schematic diagram of a quality judgment device for simulating semiconductor quantum dot devices provided in an embodiment of this specification includes:

[0076] A wave function image construction module 201 is used to determine a plurality of wave functions corresponding to the confining potential distribution diagram of the simulated semiconductor quantum dot device, and to construct a plurality of wave function images corresponding to the wave functions;

[0077] A value determination module 202, used to determine the maximum value of the wave function in the wave function image, the value of the wave function at the boundary, and preset a weight for the maximum value of the wave function;

[0078] A wave function state determination module 203, used to compare the value of the wave function at the boundary in the wave function image with the maximum value of the wave function after preset weights, to determine the states of the plurality of wave functions;

[0079] The quality determination module 204 is used to determine the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions.

[0080] Optionally, the device further comprises:

[0081] A drawing module, used for calling a three-dimensional finite element mesh generator to draw a simulated semiconductor quantum dot device;

[0082] A parameter setting module is used to set simulation parameters for the simulated semiconductor quantum dot device.

[0083] Optionally, the wave function image construction module 201 includes:

[0084] A potential distribution data calculation unit, used to calculate the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and a preset potential distribution function;

[0085] A potential distribution map construction unit, used to construct a potential distribution map according to the potential distribution data;

[0086] A potential distribution map selection unit is used to select a potential distribution map of a limited area in the potential distribution map of the simulated semiconductor quantum dot device to obtain a restricted potential distribution map;

[0087] The wave function calculation unit is used to call the Schrödinger equation solver to calculate the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device.

[0088] Optionally, the preset potential distribution function includes a Poisson equation;

[0089] The electric potential distribution data calculation unit comprises:

[0090] The potential distribution data calculation subunit is used to calculate the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and the Poisson equation.

[0091] Optionally, the wave function state determination module 203 includes:

[0092] A first state determination unit, configured to determine that the wave function is in a bound state when the values ​​of the wave functions on the boundary in the wave function image are all less than the maximum value of the wave function after preset weights;

[0093] The second state determination unit is used to determine that the wave function is in a scattering state when the value of the wave function on the boundary in the wave function image is greater than or equal to the maximum value of the wave function after a preset weight.

[0094] Optionally, the quality determination module 204 includes:

[0095] A first quality determination unit, configured to determine that when there is a wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device can form a quantum dot and the simulated semiconductor quantum dot device is of qualified quality;

[0096] The second quality determination unit is used to determine that when there is no wave function in a bound state among the multiple wave functions, the simulated semiconductor quantum dot device cannot form quantum dots and the quality of the simulated semiconductor quantum dot device is unqualified.

[0097] Optionally, the device further comprises:

[0098] The optimization module is used to adjust the set simulation parameters to optimize the quality of the simulated semiconductor quantum dot device.

[0099] Regarding the device in the above embodiment, the process of executing the operation in each step has been described in detail in the embodiment of the method, and will not be elaborated here.

[0100] Based on the same inventive concept, an embodiment of this specification also provides an electronic device.

[0101] The following describes an electronic device embodiment of the present invention, which can be regarded as a specific physical implementation of the method and device embodiments of the present invention. The details described in the electronic device embodiment of the present invention should be regarded as a supplement to the above method or device embodiments; details not disclosed in the electronic device embodiment of the present invention can be implemented with reference to the above method or device embodiments.

[0102] Reference Fig. 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this specification. Fig. 9 The electronic device 300 according to the embodiment of the present invention is described. Fig. 9 The electronic device 300 shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present invention.

[0103] like Fig. 9 As shown, the electronic device 300 is in the form of a general computing device. The components of the electronic device 300 may include, but are not limited to: at least one processing unit 310, at least one storage unit 320, a bus 330 connecting different device components (including the storage unit 320 and the processing unit 310), a display unit 340, etc.

[0104] The storage unit stores program codes, which can be executed by the processing unit 310, so that the processing unit 310 performs the steps according to various exemplary embodiments of the present invention described in the above processing method section of this specification. For example, the processing unit 310 can perform the following steps: Figure 7 Steps shown.

[0105] The storage unit 320 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 3201 and / or a cache memory unit 3202 , and may further include a read-only memory unit (ROM) 3203 .

[0106] The storage unit 320 may also include a program / utility 3204 having a set (at least one) of program modules 3205, such program modules 3205 including but not limited to: operating means, one or more application programs, other program modules and program data, each of which or some combination may include the implementation of a network environment.

[0107] Bus 330 may represent one or more of several types of bus structures, including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.

[0108] The electronic device 300 may also communicate with one or more external devices 400 (e.g., keyboards, pointing devices, Bluetooth devices, etc.), one or more devices that enable a user to interact with the electronic device 300, and / or any device that enables the electronic device 300 to communicate with one or more other computing devices (e.g., routers, modems, etc.). Such communication may be performed through an input / output (I / O) interface 350. Furthermore, the electronic device 300 may also communicate with one or more networks (e.g., a local area network (LAN), a wide area network (WAN), and / or a public network, such as the Internet) through a network adapter 360. The network adapter 360 may communicate with other modules of the electronic device 300 through the bus 330. It should be understood that although Fig. 9 Not shown, other hardware and / or software modules may be used in conjunction with the electronic device 300, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID devices, tape drives, and data backup storage devices.

[0109] Through the description of the above implementation methods, it is easy for those skilled in the art to understand that the exemplary embodiments described in the present invention can be implemented by software, or by software combined with necessary hardware. Therefore, the technical solution according to the implementation method of the present invention can be embodied in the form of a software product, which can be stored in a computer-readable storage medium (which can be a CD-ROM, USB flash drive, mobile hard disk, etc.) or on a network, including a number of instructions to enable a computing device (which can be a personal computer, server, or network device, etc.) to execute the above method according to the present invention. When the computer program is executed by a data processing device, the computer-readable medium can implement the above method of the present invention, that is: Figure 7 The method shown.

[0110] Reference Fig.10 A schematic diagram of a computer-readable medium provided for an embodiment of this specification.

[0111] accomplish Figure 7 The computer program of the method shown can be stored on one or more computer readable media. The computer readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor device, device or component, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0112] The computer readable storage medium may include a data signal propagated in a baseband or as part of a carrier wave, wherein a readable program code is carried. This propagated data signal may take a variety of forms, including but not limited to an electromagnetic signal, an optical signal, or any suitable combination of the above. The readable storage medium may also be any readable medium other than a readable storage medium, which may send, propagate, or transmit a program for use by or in combination with an instruction execution device, device, or device. The program code contained on the readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination of the above.

[0113] Program code for performing the operations of the present invention may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving a remote computing device, the remote computing device may be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., through the Internet using an Internet service provider).

[0114] In summary, the present invention can be implemented in hardware, or in a software module running on one or more processors, or in a combination thereof. It should be understood by those skilled in the art that general data processing devices such as microprocessors or digital signal processors (DSPs) can be used in practice to implement some or all of the functions of some or all of the components in the embodiments of the present invention. The present invention can also be implemented as a device or apparatus program (e.g., a computer program and a computer program product) for executing part or all of the methods described herein. Such a program implementing the present invention can be stored on a computer-readable medium, or can have the form of one or more signals. Such a signal can be downloaded from an Internet website, or provided on a carrier signal, or provided in any other form.

[0115] The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the present invention is not inherently related to any specific computer, virtual device or electronic device, and various general devices can also implement the present invention. The above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

[0116] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0117] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A method for judging the quality of a simulated semiconductor quantum dot device, characterized in that: include: Determine a plurality of wave functions corresponding to the confining potential distribution diagram of the simulated semiconductor quantum dot device, and construct a plurality of wave function images corresponding to the wave functions; Determine the maximum value of the wave function in the wave function image and the value of the wave function on the boundary, and preset a weight for the maximum value of the wave function; Comparing the value of the wave function at the boundary in the wave function image with the maximum value of the wave function after preset weights, to determine the states of the plurality of wave functions; The quality of the simulated semiconductor quantum dot device is determined based on the states of the plurality of wave functions.

2. The method according to claim 1, characterized in that Before determining a plurality of wave functions corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device, the method includes: Call the three-dimensional finite element mesh generator to draw the simulated semiconductor quantum dot device; Simulation parameters are set for the simulated semiconductor quantum dot device.

3. The method according to claim 2, characterized in that The calculating of the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device comprises: Calculating the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and a preset potential distribution function; constructing a potential distribution map according to the potential distribution data; A potential distribution diagram of a limited area selected from the potential distribution diagram of the simulated semiconductor quantum dot device to obtain a restricted potential distribution diagram; The Schrödinger equation solver is called to calculate the wave function corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device.

4. The method according to claim 3, characterized in that The preset potential distribution function includes Poisson's equation; The calculating the potential distribution data of the simulated semiconductor quantum dot device according to the simulation parameters and the preset potential distribution function comprises: The potential distribution data of the simulated semiconductor quantum dot device is calculated according to the simulation parameters and the Poisson's equation.

5. The method according to claim 1, characterized in that The determining of the states of the plurality of wave functions comprises: When the values ​​of the wave functions on the boundary in the wave function image are all less than the maximum value of the wave function after the preset weight, the wave function is in a bound state; When the value of the wave function at the boundary in the wave function image is greater than or equal to the maximum value of the wave function after preset weights, the wave function is in a scattering state.

6. The method according to claim 5, characterized in that The method of determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions comprises: When there is a wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device can form a quantum dot, and the simulated semiconductor quantum dot device is of qualified quality; When there is no wave function in a bound state among the plurality of wave functions, the simulated semiconductor quantum dot device cannot form quantum dots and the quality of the simulated semiconductor quantum dot device is unqualified.

7. The method according to claim 2, characterized in that After determining the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions, the method further comprises: The set simulation parameters are adjusted to optimize the quality of the simulated semiconductor quantum dot device.

8. A quality judgment device for simulating semiconductor quantum dot devices, which is implemented based on the method described in any one of claims 1 to 7, characterized in that ,include: A wave function image construction module, used to determine a plurality of wave functions corresponding to the confined potential distribution diagram of the simulated semiconductor quantum dot device, and to construct a plurality of wave function images corresponding to the wave functions; A value determination module, used to determine the maximum value of the wave function in the wave function image, the value of the wave function at the boundary, and preset a weight for the maximum value of the wave function; A wave function state determination module, used for comparing the value of the wave function at the boundary in the wave function image with the maximum value of the wave function after preset weights, to determine the states of the plurality of wave functions; A quality determination module is used to determine the quality of the simulated semiconductor quantum dot device based on the states of the plurality of wave functions.

9. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the method according to any one of claims 1 to 7.

10. A storage medium, characterized in that: The storage medium stores a computer program, and the computer program is configured to execute the method according to any one of claims 1 to 7 when running.

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