Quantum dot patterned anti-counterfeiting label and preparation method thereof

Abstract

The application discloses a quantum dot patterned anti-fake label and a preparation method thereof, and belongs to the technical field of anti-fake technology. The quantum dot patterned anti-fake label comprises a substrate; a quantum dot patterned pixel layer is arranged on the substrate; the quantum dot patterned pixel layer comprises quantum dot pixel units; the quantum dot pixel units carry patterned anti-fake information; and the quantum dot pixel units comprise at least one of blue light pixel units, green light pixel units and red light pixel units. The quantum dot patterned anti-fake label is not easy to be perceived by human eyes under sunlight, but can emit a pattern of three combined pixels of blue, green and red with bright colors under the excitation of additional irradiation of a high-energy light source, thereby achieving the functions of anti-fake and easy inspection.

Description

Technical Field

[0001] This application relates to a quantum dot patterned anti-counterfeiting label and its preparation method, belonging to the field of anti-counterfeiting technology. Background Technology

[0002] Quantum dots (QDs), a new type of semiconductor nanocrystalline material, are also known as "artificial atoms." The electrons and holes in quantum dots are spatially confined, forming an energy level structure similar to that of atoms—a phenomenon known as quantum confinement. This unique property gives quantum dots advantages such as precisely tunable spectra, narrow half-maximum width at half-maximum (HWHM), high quantum efficiency, and a wide color gamut. Quantum dots are considered the optimal color performance solution and color conversion material currently available. Displays using quantum dot technology can significantly improve the color gamut, presenting richer colors, enhancing image vibrancy, and realistically reproducing the colors of nature. Besides its application in backlight displays, the unique properties of quantum dots also have special uses in anti-counterfeiting labels and the construction of smart label databases.

[0003] The synthesis of quantum dots has undergone several technological breakthroughs. The initial breakthrough in quantum dot synthesis chemistry occurred between 1990 and 1993 with the emergence of a "metal-organic chemical vapor deposition-coordination solvent-high temperature" synthetic route. This method was invented at Bell Labs and matured in Mougi Bawendi's research group at MIT. It uses dimethylcadmium as the cadmium source to synthesize high-quality cadmium selenide quantum dots at high temperatures (around 300 degrees Celsius) in an organic coordination solvent. However, because this synthetic route borrowed from the "metal-organic vapor deposition" method and used highly toxic and explosive raw materials (dimethylcadmium), it was not conducive to large-scale application. This situation was broken around 2000 by Professor Peng Xiaogang, a Chinese scholar. Peng Xiaogang joined Paul Alivisatos's research group as a postdoctoral researcher in 1994 and began independent research in the Department of Chemistry at the University of Arkansas in 1999. Based on a deep understanding of the reaction mechanism, Peng Xiaogang's research group developed a "green" synthetic route based on safe and non-toxic non-coordination solvents, using stable and readily available oxides or carboxylates as precursors. The development of new synthetic routes has enabled the synthesis of quantum dots to gradually move into laboratories worldwide and be promoted in industry. Zhijing Technology has achieved large-scale industrialization of its in-situ synthesis method for perovskite quantum dots, making it easy to obtain perovskite blue, green, and red quantum dot polymer powder materials with good material lifespan.

[0004] The processing of quantum dot materials generally involves mixing liquid photosensitive resin or thermosetting resin with a certain viscosity for coating, inkjet printing, photolithography, and other processes, which can effectively process the required products and patterns. Inkjet printing has significant advantages in large-size pattern design and high-throughput processing, and there are mature production lines available.

[0005] With the increasing frequency of global business activities, the harm caused by counterfeiting should be taken seriously. Counterfeit everyday consumer goods affect the consumer experience, counterfeit medicines pose a significant threat to patient safety and public health, and counterfeit high-tech products cause significant economic losses in both developed and developing countries. Updating and improving anti-counterfeiting technology is a powerful way to combat counterfeit products. The demand for next-generation anti-counterfeiting technology is enormous and constantly growing in the context of global economic development, security, and human health. Therefore, developing a graphic anti-counterfeiting label that balances ease of detection and anti-counterfeiting capabilities is in line with the demands of the times. Summary of the Invention

[0006] To address the aforementioned issues, this invention provides a quantum dot patterned anti-counterfeiting label and its preparation method. The pattern information, after inkjet curing at low concentration, is not easily detected by the human eye under sunlight. However, under additional irradiation excitation from a high-energy light source, it can emit a pattern of brightly colored blue, green, and red pixels, effectively achieving both anti-counterfeiting and easy-to-check functions.

[0007] To achieve the above-mentioned objectives, this application adopts the following technical solution:

[0008] On the one hand, this application provides a quantum dot patterned anti-counterfeiting label, the quantum dot patterned anti-counterfeiting label including a substrate;

[0009] The substrate is provided with a quantum dot patterned pixel layer;

[0010] The quantum dot patterned pixel layer includes quantum dot pixel units;

[0011] The quantum dot pixel unit carries patterned anti-counterfeiting information;

[0012] The quantum dot pixel unit includes at least one of blue light pixel units, green light pixel units, and red light pixel units.

[0013] Optionally, the quantum dot pixel unit does not display the patterned anti-counterfeiting information under sunlight.

[0014] Optionally, the quantum dot pixel unit displays the patterned anti-counterfeiting information under irradiation excitation by a high-energy light source.

[0015] Optionally, the emission wavelength of the high-energy light source is 200~400nm.

[0016] Optionally, the quantum dot patterned pixel layer is sequentially inkjet printed and photocured, and then bonded to the surface of the substrate.

[0017] Optionally, the quantum dot patterned pixel layer is formed by combining the quantum dot pixel units.

[0018] Optionally, the thickness of the quantum dot patterned pixel layer is 100~500μm.

[0019] Optionally, the quantum dot pixel unit is formed by a combination of at least one of the blue light pixel unit, green light pixel unit, and red light pixel unit.

[0020] Secondly, this application provides a method for preparing the aforementioned quantum dot patterned anti-counterfeiting label, comprising the following steps:

[0021] (1) A mixture containing quantum dot system, polymer and solvent is stirred, dissolved and sprayed in sequence to obtain quantum dot polymer powder I;

[0022] (2) The quantum dot polymer powder I is subjected to secondary growth to obtain quantum dot polymer powder II;

[0023] (3) The mixture containing the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is stirred and dissolved to obtain quantum dot ink;

[0024] (4) The quantum dot ink is inkjet printed onto the substrate and then photocured to obtain the quantum dot patterned anti-counterfeiting label.

[0025] Optionally, in step (1), the quantum dot system includes at least one of CsPbCl3, MAPbCl3, FAPbCl3, CsSnCl3, MASnCl3, FASnCl3, CsPbBr3, MAPbBr3, FAPbBr3, CsSnBr3, MASnBr3, FASnBr3, CsPbI3, MAPbI3, FAPbI3, CsSnI3, MASnI3, and FASnI3.

[0026] Optionally, in step (1), the polymer includes an organic polymer.

[0027] Optionally, the organic polymer includes at least one of polycarbonate (PC), polymethyl methacrylate (PMMA), polyvinylidene fluoride (PVDF), ethylene-vinyl alcohol copolymer (EVOH), acrylonitrile-butadiene-styrene copolymer (ABS), and polyvinylidene chloride (PVDC).

[0028] Optionally, in steps (1) and (3), the solvent independently includes at least one of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and propylene glycol methyl ether acetate (PGMEA).

[0029] Optionally, in step (1), the mass ratio of the quantum dot system, polymer, and solvent is 1~4:3~10:1000~5000.

[0030] Optionally, in step (1), the temperature of the spray is 60~100℃;

[0031] The gas pressure of the spray is 70~100MPa;

[0032] The frequency of the spray fan is 20~50Hz.

[0033] Optionally, in step (1), the temperature of the spray is independently selected from any value or a range between 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, and 100°C.

[0034] Optionally, the gas pressure of the spray is independently selected from any value of 70MPa, 75MPa, 80MPa, 85MPa, 90MPa, 95MPa, 100MPa or a range between any two.

[0035] Optionally, the fan frequency of the spray is independently selected from any value of 20Hz, 25Hz, 30Hz, 35Hz, 40Hz, 45Hz, 50Hz or a range between any two.

[0036] Optionally, in step (2), the temperature of the secondary growth is 80~130℃;

[0037] The secondary growth time is 5-20 minutes.

[0038] Optionally, in step (2), the temperature of the secondary growth is independently selected from any value or a range between any two of 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, and 130℃.

[0039] Optionally, the time for the secondary growth is independently selected from any value of 5 min, 8 min, 10 min, 13 min, 15 min, 18 min, 20 min, or a range between any two.

[0040] Optionally, in step (3), the oligomer includes at least one of aliphatic polyurethane acrylate, aliphatic polyurethane hexaacrylate, tin-free aliphatic polyurethane diacrylate, aromatic polyurethane acrylate, aromatic polyurethane hexaacrylate, fluorinated polyurethane acrylate, silicone-modified polyurethane acrylate, 2-hydroxy-3-phenoxypropyl acrylate, epoxy acrylate, modified epoxy acrylate, epoxy methacrylate, and fatty acid-modified epoxy acrylate.

[0041] Optionally, in step (3), the monomer includes at least one of 4-tert-butylcyclohexyl acrylate, methacrylate ethylurea ethoxylate, m-phenoxybenzyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl ethoxylate, ethoxyphenoxylate, 3,3,5-trimethylcyclohexyl acrylate, and o-phenylphenoxyethyl acrylate.

[0042] Optionally, in step (3), the initiator includes at least one of 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino]-1-propanone, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, benzoin dimethyl ether, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxy-cyclohexyl-phenyl ketone, benzophenone, isopropylthioxanthonone (2,4 isomer mixture), ethyl 4-(N,N-dimethylamino)benzoate, isooctyl 4-(N,N-dimethyl)benzoate, 2-isopropylthioxanthonone, 2-benzyl-2-(dimethylamino)-4-morpholino, 4-phenylxylene ketone, and methyl o-benzoylbenzoate.

[0043] Optionally, in step (3), the mass ratio of the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is 1~3:1~4:2~5:5~10:0.1~0.3.

[0044] Optionally, in step (4), the inkjet printing flow rate is 20~80ml / min.

[0045] Optionally, in step (4), the inkjet printing flow rate is independently selected from any value of 20ml / min, 30ml / min, 40ml / min, 50ml / min, 80ml / min or any range between two.

[0046] Optionally, in step (4), the photocuring is performed using UV blue light.

[0047] Optionally, the wavelength of the UV blue light is 350~400nm.

[0048] Preferably, the wavelength of the UV blue light is 365nm.

[0049] Optionally, in step (4), the photocuring time is 1~10s.

[0050] Optionally, in step (4), the photocuring time is independently selected from any value of 1s, 2s, 3s, 4s, 6s, 8s, 10s or any range between the two.

[0051] The beneficial effects that this application can produce include:

[0052] (1) The quantum dot patterned anti-counterfeiting label provided in this application utilizes the fact that the pattern information after inkjet curing at low concentration is not easily detected by the human eye under sunlight, but can emit a pattern of three combinations of bright blue, green and red pixels under the additional irradiation of high-energy light source, which effectively plays the functions of anti-counterfeiting and easy inspection; the quantum dot patterned anti-counterfeiting label can be adapted to flexible and stretchable device applications, and combined with the rich colors of quantum dots, it can realize patterned information labeling of multiple colors, and establish a more complex intelligent label database; the quantum dot patterned information constructed in this application takes into account both easy detection and anti-counterfeiting capabilities, which can help distinguish and identify the product competition judgment of non-main enterprise raw materials in various assembly line operations, and improve product competitiveness.

[0053] (2) The method for preparing a quantum dot patterned anti-counterfeiting label provided in this application utilizes an in-situ spraying method, which can obtain quantum dot polymer powder on a large scale. The process is simple, the raw materials are cheap, and the powder has excellent performance. The quantum dot polymer powder is mixed with UV photosensitive resin to form ink, which has controllable viscosity, good compatibility, and is suitable for mass inkjet printing. The inkjet printing method can achieve the printing of patterned information above 100μm, and it is permanently retained after curing. It has strong adhesion to the bottom material and can meet the long-term use requirements. In addition, inkjet printing can achieve high-throughput printing in a production line, with low mass production cost and strong operability. Attached Figure Description

[0054] Figure 1 This is a schematic diagram illustrating the design process of the quantum dot patterned anti-counterfeiting label for this application;

[0055] Figure 2 This is a schematic diagram of the green quantum dot patterned anti-counterfeiting label design for this application;

[0056] Figure 3 This is a schematic diagram of the design of the red quantum dot patterned anti-counterfeiting label for this application;

[0057] Figure 4 This is a schematic diagram of the blue quantum dot patterned anti-counterfeiting label design for this application;

[0058] Figure 5 This is a schematic diagram of the green, red, and blue quantum dot patterned anti-counterfeiting label design for this application. Detailed Implementation

[0059] The present application is described in detail below with reference to the embodiments, but the present application is not limited to these embodiments.

[0060] Unless otherwise specified, all raw materials used in the embodiments of this application were purchased through commercial channels.

[0061] Example 1

[0062] CsPbBr3 green quantum dot polymer ink is used for anti-counterfeiting pattern design:

[0063] Figure 2 For the design of green quantum dot patterned anti-counterfeiting labels, the five components of the quantum dot precursor raw materials—cesium bromide, lead bromide, octylamine bromide, PMMA, and DMF—are first weighed, heated, stirred, and mixed according to a mass ratio (4.7:4.3:1:80:1250) to form a stable quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is then transported to the nozzle of a spraying device via a peristaltic pump and rubber tubing. High-pressure nitrogen gas (80MPa) is used to atomize the solution into droplets, and the droplets undergo a high-temperature thermal field (70℃) to instantly remove most of the polar solvent, allowing the precursor raw materials to ionize and crystallize. The entire process involves droplet atomization and instantaneous drying in a high-temperature thermal field, forming microsphere polymer powder which is collected by the cyclone collector of the spraying device. The obtained microsphere polymer powder was spread evenly on tin foil and baked in a forced-air oven at high temperature (110℃) for 10 minutes to remove the solvent twice. The crystal structure regenerated, and the powder transformed into a green powder. After cooling to room temperature, it was ground in an agate mortar, sieved, and bottled. Next, 0.5g of quantum dot polymer powder (CsPbBr3@PMMA) was mixed with 2g of oligomer (fluorinated polyurethane acrylate), 3g of monomer (dicyclopentenyl ethoxylate), 5g of solvent (PGMEA), and 0.2g of initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Then, the ink was sprayed onto a substrate using an inkjet printer, controlling the droplet size and flow rate (30ml / min). After printing, the resin was cured by UV blue light irradiation at 365nm for 3 seconds, resulting in anti-counterfeiting label sample 1.

[0064] Example 2

[0065] CsPbI3 red quantum dot polymer ink is used for anti-counterfeiting pattern design:

[0066] Figure 3For the design of the red quantum dot patterned anti-counterfeiting label, firstly, the five components of the quantum dot precursor raw materials—cesium iodide, lead iodide, octylamine iodide, PMMA, and DMF—are weighed, heated, stirred, and mixed according to a mass ratio (4.7:4.3:1:80:1250) to form a stable quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is then transported to the nozzle of a spraying device via a peristaltic pump and rubber tubing. High-pressure nitrogen (80MPa) is used to atomize the solution into droplets, and the droplets undergo a high-temperature thermal field (70℃) to instantly remove most of the polar solvent, allowing the precursor raw materials to ionize and crystallize. The entire process involves droplet atomization and instantaneous drying in a high-temperature thermal field, forming microsphere polymer powder which is collected by the cyclone collector of the spraying device. The obtained microsphere polymer powder was spread evenly on tin foil and baked in a forced-air oven at high temperature (110℃) for 10 minutes to remove the solvent a second time. The crystal structure regenerated, and the powder turned red. After cooling to room temperature, it was ground in an agate mortar, sieved, and bottled. Next, 0.5g of quantum dot polymer powder (CsPbI3@PMMA) was mixed with 2g of oligomer (fluorinated polyurethane acrylate), 3g of monomer (dicyclopentenyl ethoxylate), 5g of solvent (PGMEA), and 0.2g of initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Then, the ink was sprayed onto a substrate using an inkjet printer, controlling the droplet size and flow rate (30ml / min). After printing, the resin was cured by UV blue light irradiation at 365nm for 3 seconds. Anti-counterfeiting label sample 2 was obtained.

[0067] Example 3

[0068] CsPbCl3 blue quantum dot polymer ink is used for anti-counterfeiting pattern design:

[0069] Figure 4For the design of blue quantum dot patterned anti-counterfeiting labels, the five components of the quantum dot precursor raw materials—cesium chloride, lead chloride, octylamine chloride, PMMA, and DMF—are weighed, heated, stirred, and mixed in a mass ratio (4.7:4.3:1:80:1250) to form a stable quantum dot polymer precursor solution. The prepared quantum dot polymer precursor solution is then pumped through a peristaltic pump and rubber tubing to the nozzle of a spraying device. High-pressure nitrogen (80MPa) is used to atomize the solution into droplets, which are then subjected to a high-temperature thermal field (70℃) to instantly remove most of the polar solvent, allowing the precursor raw materials to ionize and crystallize. The entire process involves droplet atomization and instantaneous drying in a high-temperature thermal field, forming microsphere polymer powder which is collected by the cyclone collector of the spraying device. The obtained microsphere polymer powder was spread evenly on tin foil and baked in a forced-air oven at high temperature (110℃) for 10 minutes to remove the solvent a second time. The crystal structure regenerated, and the powder turned into a blue powder. After cooling to room temperature, it was ground in an agate mortar, sieved, and bottled. Next, 0.5g of quantum dot polymer powder (CsPbCl3@PMMA) was mixed with 2g of oligomer (fluorinated polyurethane acrylate), 3g of monomer (dicyclopentenyl ethoxylate), 5g of solvent (PGMEA), and 0.2g of initiator (2-hydroxy-2-methyl-1-phenyl-1-propanone) to prepare ink. Then, the ink was sprayed onto a substrate using an inkjet printer, controlling the droplet size and flow rate (30ml / min). After printing, the substrate was irradiated with UV blue light at 365nm for 3 seconds to cure the resin. Anti-counterfeiting label sample 3 was obtained.

[0070] Example 4

[0071] Green, red, and blue quantum dot polymer inks are used simultaneously for printing anti-counterfeiting patterns.

[0072] Figure 5 To design a three-color quantum dot patterned anti-counterfeiting label, green, red, and blue quantum dots from Examples 1-3 were first obtained and configured into three colors of ink. The ink was then applied side-by-side to a substrate using an inkjet printer, with each nozzle controlling the droplet size and flow rate (30 ml / min). After printing, the label was cured by irradiating it with a 365nm UV blue light source for 3 seconds. This resulted in anti-counterfeiting label sample 4.

[0073] The above description is merely a few embodiments of this application and is not intended to limit this application in any way. Although this application discloses preferred embodiments as described above, it is not intended to limit this application. Any changes or modifications made by those skilled in the art without departing from the scope of the technical solution of this application using the disclosed technical content are equivalent to equivalent implementation cases and fall within the scope of the technical solution.

Claims

1. A quantum dot patterned anti-counterfeiting label, characterized in that, The quantum dot patterned anti-counterfeiting label includes a substrate; The substrate is provided with a quantum dot patterned pixel layer; The quantum dot patterned pixel layer includes quantum dot pixel units; The quantum dot pixel unit carries patterned anti-counterfeiting information; The quantum dot pixel unit includes at least one of blue light pixel unit, green light pixel unit, and red light pixel unit; The method for preparing a quantum dot patterned anti-counterfeiting label includes the following steps: (1) A mixture containing a quantum dot system, a polymer, and a solvent is stirred, dissolved, sprayed, and dried sequentially to obtain quantum dot polymer powder I; (2) The quantum dot polymer powder I is subjected to secondary growth to obtain quantum dot polymer powder II; (3) The mixture containing the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is stirred and dissolved to obtain quantum dot ink; (4) The quantum dot ink is inkjet printed onto the substrate and then photocured to obtain the quantum dot patterned anti-counterfeiting label.

2. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, The thickness of the quantum dot patterned pixel layer is 100~500μm.

3. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, The quantum dot pixel unit does not display the patterned anti-counterfeiting information under sunlight.

4. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, The quantum dot pixel unit displays the patterned anti-counterfeiting information under the irradiation excitation of a high-energy light source.

5. A quantum dot patterned anti-counterfeiting label according to claim 4, characterized in that, The high-energy light source emits light in the range of 200~400nm.

6. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (1) of the preparation method of the quantum dot patterned anti-counterfeiting label, the quantum dot system includes at least one of CsPbCl3, MAPbCl3, FAPbCl3, CsSnCl3, MASnCl3, FASnCl3, CsPbBr3, MAPbBr3, FAPbBr3, CsSnBr3, MASnBr3, FASnBr3, CsPbI3, MAPbI3, FAPbI3, CsSnI3, MASnI3, and FASnI3.

7. The quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (1) of the preparation method of the quantum dot patterned anti-counterfeiting label, the polymer includes organic polymers.

8. A quantum dot patterned anti-counterfeiting label according to claim 7, characterized in that, The organic polymer includes at least one of polycarbonate, polymethyl methacrylate, polyvinylidene fluoride, ethylene-vinyl alcohol copolymer, acrylonitrile-butadiene-styrene copolymer, and polyvinylidene chloride.

9. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In steps (1) and (3) of the method for preparing the quantum dot patterned anti-counterfeiting label, the solvent independently includes at least one of N,N-dimethylformamide, dimethyl sulfoxide, and propylene glycol methyl ether acetate.

10. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (1) of the preparation method of the quantum dot patterned anti-counterfeiting label, the mass ratio of the quantum dot system, polymer and solvent is 1~4:3~10:1000~5000.

11. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (1) of the preparation method of the quantum dot patterned anti-counterfeiting label, the temperature of the spray is 60~100℃; The gas pressure of the spray is 70~100MPa; The frequency of the spray fan is 20~50Hz.

12. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (2) of the preparation method of the quantum dot patterned anti-counterfeiting label, the temperature of the secondary growth is 80~130℃; The secondary growth time is 5-20 minutes.

13. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (3) of the preparation method of the quantum dot patterned anti-counterfeiting label, the oligomer includes at least one of aliphatic polyurethane acrylate, aliphatic polyurethane hexaacrylate, tin-free aliphatic polyurethane diacrylate, aromatic polyurethane acrylate, aromatic polyurethane hexaacrylate, fluorinated polyurethane acrylate, silicone-modified polyurethane acrylate, 2-hydroxy-3-phenoxypropyl acrylate, epoxy acrylate, modified epoxy acrylate, epoxy methacrylate, and fatty acid-modified epoxy acrylate.

14. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (3) of the preparation method of the quantum dot patterned anti-counterfeiting label, the monomer includes at least one of 4-tert-butylcyclohexyl acrylate, methacrylate ethylurea ethoxylate, m-phenoxybenzyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl ethoxyacrylate, ethoxyphenoxyacrylate, 3,3,5-trimethylcyclohexyl acrylate, and o-phenylphenoxyethyl acrylate.

15. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (3) of the preparation method of the quantum dot patterned anti-counterfeiting label, the initiator includes at least one of 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino]-1-propanone, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, benzoin dimethyl ether, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxy-cyclohexyl-phenyl ketone, benzophenone, a mixture of 2,4 isomers of isopropylthioxanthanone, ethyl 4-(N,N-dimethylamino)benzoate, isooctyl 4-(N,N-dimethyl)benzoate, 2-isopropylthioxanthanone, 2-benzyl-2-(dimethylamino)-4-morpholino, 4-phenylxylene ketone, and methyl o-benzoylbenzoate.

16. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (3) of the preparation method of the quantum dot patterned anti-counterfeiting label, the mass ratio of the quantum dot polymer powder II, oligomer, monomer, solvent and initiator is 1~3:1~4:2~5:5~10:0.1~0.

3.

17. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (4) of the preparation method of the quantum dot patterned anti-counterfeiting label, the inkjet printing flow rate is 20~80ml / min.

18. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (4) of the preparation method of the quantum dot patterned anti-counterfeiting label, the photocuring is performed using UV blue light.

19. A quantum dot patterned anti-counterfeiting label according to claim 18, characterized in that, The wavelength of the UV blue light is 350~400nm.

20. A quantum dot patterned anti-counterfeiting label according to claim 1, characterized in that, In step (4) of the preparation method of the quantum dot patterned anti-counterfeiting label, the photocuring time is 1~10s.

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