A semiconductor laser chip

Abstract

The present invention discloses a semiconductor laser chip, comprising, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper cladding layer, an electron blocking layer, and a second upper cladding layer. The lower waveguide layer is a lower waveguide layer for enhancing the light field localization effect. The lower waveguide layer for enhancing the light field localization effect is any one or any combination of an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInGaN superlattice, a GaN / AlGaN superlattice, or a GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm. The present invention reduces internal absorption loss of the light field, suppresses the refractive index dispersion of the laser, reduces the influence of high-concentration carrier concentration fluctuations on the effective refractive index, and enhances the confinement factor, light field localization effect, and mode gain of the laser.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser chip. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated emission of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, with the output power of a single light-emitting diode in the mW level. 2) The operating current density of lasers reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) The light-emitting diode spontaneously radiates incoherent light from high energy level to low energy level without external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating completely coherent light of the photon and the induced photon; 4) The principle is different: the light-emitting diode is under the action of external voltage, and the electron-hole transition to the active layer or pn junction generates radiative recombination and luminescence, while the laser needs to meet the lasing conditions before it can be lased. The carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor ultraviolet lasers have the following problems: the light field of the gallium nitride laser is dissipative, the refractive index of the laser is dispersed, the high-concentration carrier concentration fluctuations affect the refractive index of the active layer, and the limitation factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser; the light field mode leaks into the substrate to form a standing wave, which leads to low substrate mode suppression efficiency and poor far-field image FFP quality. Summary of the Invention

[0005] The present invention proposes a semiconductor laser chip that reduces the internal absorption loss of the light field, suppresses the refractive index dispersion of the laser, reduces the influence of high-concentration carrier concentration fluctuations on the effective refractive index, and enhances the confinement factor, light field localization effect and mode gain of the laser.

[0006] The present invention provides a semiconductor laser chip, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, a first upper cladding layer, an electron blocking layer, and a second upper cladding layer. The lower waveguide layer is a lower waveguide layer for enhancing the localization effect of a light field; the lower waveguide layer for enhancing the localization effect of a light field is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

[0007] 11. Preferably, the angle of the valley position of the photon energy absorption coefficient of the waveguide layer under the enhanced light field localization effect toward the lower cladding layer is α, and the angle of the peak position of the photon energy absorption coefficient of the waveguide layer under the enhanced light field localization effect toward the active layer is β, wherein: 30°≤α≤β≤90°;

[0008] The angle of the valley position of the light hole effective mass of the waveguide layer under the enhanced light field localization effect toward the lower cladding layer is γ, and the angle of the peak position of the light hole effective mass of the waveguide layer under the enhanced light field localization effect toward the active layer is θ, wherein: 15°≤γ≤θ≤90°;

[0009] The peak position of the hole mobility in the waveguide layer under the enhanced light field localization effect has a descending angle δ toward the lower cladding layer, and the valley position of the hole mobility in the waveguide layer under the enhanced light field localization effect has a rising angle σ toward the active layer, wherein: 45°≤δ≤σ≤90°;

[0010] The descending angle of the peak position of the saturated electron drift velocity of the waveguide layer under the enhanced light field localization effect toward the lower cladding layer is φ, and the rising angle of the valley position of the saturated electron drift velocity of the waveguide layer under the enhanced light field localization effect toward the active layer is ψ, where: 25°≤φ≤ψ≤90°.

[0011] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer, and the peak position of the hole mobility and saturated electron drift velocity of the waveguide layer enhanced by the local effect of the light field and the descending angle toward the lower cladding layer have the following relationship: 15°≤γ≤φ≤α≤δ≤90°.

[0012] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field, the descending angle of the peak position of the light hole effective mass toward the active layer, and the hole mobility of the waveguide layer enhanced by the local effect of the light field, and the rising angle of the valley position of the saturated electron drift velocity toward the active layer have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

[0013] Preferably, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer, the hole mobility and the peak position of the saturated electron drift velocity of the waveguide layer enhanced by the local effect of the light field and the descending angle toward the lower cladding layer, the photon energy absorption coefficient of the waveguide layer enhanced by the local effect of the light field and the peak position of the light hole effective mass and the rising angle toward the active layer of the valley position of the hole mobility and the saturated electron drift velocity of the waveguide layer enhanced by the local effect of the light field have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

[0014] Preferably, the photon energy absorption coefficient distribution of the waveguide layer under the enhanced light field localization effect has a function y=(a x +1) / (a x -1)(0<a<1) the second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer under the enhanced light field local effect has a function y=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer under the enhanced light field localization effect has a function y=(c x +1) / (c x -1)(c>1) the third quadrant curve distribution; the saturated electron drift velocity distribution of the waveguide layer under the enhanced light field localization effect has a function y=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

[0015] Preferably, the photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution, and saturated electron drift velocity distribution of the waveguide layer under the light field localization effect enhancement have the following relationship: 0<b≤a<1<d≤c.

[0016] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 ≥ m ≥ 1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. any combination thereof, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0017] Preferably, the lower cladding layer, the lower waveguide layer, the first upper cladding layer, the electron blocking layer, and the second upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0018] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0019] Compared with the prior art, the semiconductor laser chip provided by the embodiment of the present invention has the following beneficial effects: designing the changing trend and distribution of the photon energy absorption coefficient and the effective mass of the light hole, reducing the internal absorption loss of the light field, suppressing the refractive index dispersion of the laser, reducing the influence of the high-concentration carrier concentration fluctuation on the effective refractive index, and enhancing the confinement factor, light field localization effect and mode gain of the laser; at the same time, designing the light field localization effect to enhance the changing trend and distribution of the hole mobility and saturated electron drift velocity of the lower waveguide layer, controlling the carrier distribution of the lower waveguide layer, and then regulating the overlapping position of the electron-hole wave function of the active layer, controlling the lasing position of the laser in the active layer, reducing light field dissipation, improving laser coherence and light field localization, reducing the slow axis divergence angle, and improving far-field image quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 1 is a schematic structural diagram of a semiconductor laser element according to an embodiment of the present invention;

[0021] Figure 2 This is a SIMS secondary ion mass spectrum of the structure of a semiconductor laser element according to an embodiment of the present invention;

[0022] Figure 3 This is a SIMS secondary ion mass spectrum diagram (partially enlarged diagram) of the structure of a semiconductor laser element according to an embodiment of the present invention;

[0023] Figure 4 This is a TEM lens electron microscope image of a semiconductor laser element according to an embodiment of the present invention;

[0024] Figure 5 This is a TEM lens electron microscope image (partial magnification) of a semiconductor laser element according to an embodiment of the present invention;

[0025] Figure 6 This is a TEM lens electron microscope image (partial magnification) of a semiconductor laser element according to an embodiment of the present invention;

[0026] Reference numerals: 100: substrate; 101: lower cladding layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: first upper cladding layer, 106: electron blocking layer, 107: second upper cladding layer. DETAILED DESCRIPTION

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0028] In order to solve the above problems, a semiconductor laser chip provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0029] Reference Figure 1-6 The present invention provides a semiconductor laser chip, which includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a first upper cladding layer 105, an electron blocking layer 106, and a second upper cladding layer 107. The lower waveguide layer 102 is a lower waveguide layer 102 with enhanced light field localization effect. The lower waveguide layer 102 with enhanced light field localization effect is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, and GaN / AlInGaN superlattice, and has a thickness of 10 to 1000 nm.

[0030] like Figure 2-3 As shown, the rising angle of the valley position of the photon energy absorption coefficient of the waveguide layer 102 under the enhanced light field localization effect toward the lower cladding layer 101 is α, and the descending angle of the peak position of the photon energy absorption coefficient of the waveguide layer 102 under the enhanced light field localization effect toward the active layer 103 is β, wherein: 30°≤α≤β≤90°;

[0031] The angle of the valley position of the light hole effective mass of the waveguide layer 102 under the enhanced light field localization effect toward the lower cladding layer 101 is γ, and the angle of the peak position of the light hole effective mass of the waveguide layer 102 under the enhanced light field localization effect toward the active layer 103 is θ, wherein: 15°≤γ≤θ≤90°;

[0032] The peak position of the hole mobility of the waveguide layer 102 under the enhanced light field localization effect has a descending angle δ toward the lower cladding layer 101 , and the valley position of the hole mobility of the waveguide layer 102 under the enhanced light field localization effect has a rising angle σ toward the active layer 103 , wherein: 45°≤δ≤σ≤90°;

[0033] The peak position of the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field has a descending angle of φ toward the lower cladding layer 101, and the valley position of the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field has a rising angle of ψ toward the active layer 103, wherein: 25°≤φ≤ψ≤90°.

[0034] In the present invention, the photon energy absorption coefficient of the lower waveguide layer 102 enhanced by the localized light field effect, the rising angle of the valley position of the light hole effective mass toward the lower cladding layer 101, and the descending angle of the peak position of the hole mobility and saturated electron drift velocity of the lower waveguide layer 102 enhanced by the localized light field effect toward the lower cladding layer 101 have the following relationship: 15°≤γ≤φ≤α≤δ≤90°.

[0035] In the present invention, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field, the descending angle of the peak position of the light hole effective mass toward the active layer 103, and the hole mobility of the waveguide layer 102 enhanced by the local effect of the light field, and the rising angle of the valley position of the saturated electron drift velocity toward the active layer 103 have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

[0036] In the present invention, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer 101, the hole mobility and the peak position of the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field and the descending angle toward the lower cladding layer 101, the photon energy absorption coefficient of the waveguide layer 102 enhanced by the local effect of the light field and the peak position of the light hole effective mass and the descending angle toward the active layer 103, and the rising angle toward the valley position of the hole mobility and the saturated electron drift velocity of the waveguide layer 102 enhanced by the local effect of the light field and the active layer 103 have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

[0037] In the present invention, the photon energy absorption coefficient distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(a x +1) / (a x -1)(0<a<1) the second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(c x +1) / (c x -1)(c>1) the third quadrant curve distribution; the saturated electron drift velocity distribution of the waveguide layer 102 under the enhanced light field localization effect has a function y=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

[0038] In the present invention, the photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution, and saturated electron drift velocity distribution of the light field localization effect enhanced lower waveguide layer 102 have the following relationship: 0<b≤a<1<d≤c.

[0039] like Figure 4-6 As shown, the present invention designs the light field localization effect to enhance the change trend and distribution of the hole mobility and saturated electron drift velocity of the lower waveguide layer 102, control the carrier distribution of the lower waveguide layer 102, and then regulate the overlapping position of the electron-hole wave function of the active layer 103, control the lasing position of the laser in the active layer 103, reduce light field dissipation, improve laser coherence and light field localization, reduce the slow axis divergence angle, and improve far-field image quality. As shown in the following table:

[0040] project Traditional lasers Laser of the present invention Range of change Slow axis divergence angle 20～30° 5～20° Limiting Factor 1.50％ 2.41％ 61％

[0041] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, etc. any one or any combination thereof, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0042] In the present invention, the lower cladding layer 101, the lower waveguide layer 102, the first upper cladding layer 105, the electron blocking layer 106, and the second upper cladding layer 107 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0043] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0044] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser chip, comprising, from bottom to top, a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), a first upper cladding layer (105), an electron blocking layer (106), and a second upper cladding layer (107), characterized in that: The lower waveguide layer (102) is a light field localization effect enhanced lower waveguide layer (102); the light field localization effect enhanced lower waveguide layer (102) is any one of InGaN, GaN, InN, AlInGaN, AlInN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice or any combination thereof, and has a thickness of 10-1000 nm; The rising angle of the valley position of the photon energy absorption coefficient of the waveguide layer (102) under the enhanced light field localization effect toward the lower cladding layer (101) is α, and the falling angle of the peak position of the photon energy absorption coefficient of the waveguide layer (102) under the enhanced light field localization effect toward the active layer (103) is β, wherein: 30°≤α≤β≤90°; The rising angle of the valley position of the light hole effective mass of the waveguide layer (102) under the enhanced light field localization effect toward the lower cladding layer (101) is γ, and the falling angle of the peak position of the light hole effective mass of the waveguide layer (102) under the enhanced light field localization effect toward the active layer (103) is θ, wherein: 15°≤γ≤θ≤90°; The angle of descent of the peak position of the hole mobility of the waveguide layer (102) under the enhanced light field localization effect toward the lower cladding layer (101) is δ, and the angle of descent of the valley position of the hole mobility of the waveguide layer (102) under the enhanced light field localization effect toward the active layer (103) is σ, wherein: 45°≤δ≤σ≤90°; The peak position of the saturated electron drift rate of the waveguide layer (102) enhanced by the local effect of the light field has a descending angle of φ toward the lower cladding layer (101), and the valley position of the saturated electron drift rate of the waveguide layer (102) enhanced by the local effect of the light field has a rising angle of ψ toward the active layer (103), wherein: 25°≤φ≤ψ≤90°.

2. The semiconductor laser chip according to claim 1, characterized in that: The photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer (101), and the peak position of the hole mobility and saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field and the falling angle toward the lower cladding layer (101) have the following relationship: 15°≤γ≤φ≤α≤δ≤90°; The photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field, the descending angle of the peak position of the light hole effective mass toward the active layer (103), and the hole mobility and the rising angle of the valley position of the saturated electron drift rate of the waveguide layer (102) enhanced by the local effect of the light field toward the active layer (103) have the following relationship: 15°≤θ≤ψ≤β≤σ≤90°.

3. The semiconductor laser chip according to claim 2, characterized in that: The photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the rising angle of the valley position of the light hole effective mass toward the lower cladding layer (101), the hole mobility and the peak position of the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field and the falling angle toward the lower cladding layer (101), the photon energy absorption coefficient of the waveguide layer (102) enhanced by the local effect of the light field and the peak position of the light hole effective mass and the rising angle toward the valley position of the hole mobility and the saturated electron drift velocity of the waveguide layer (102) enhanced by the local effect of the light field and the active layer (103) have the following relationship: 15°≤γ≤φ≤α≤δ≤θ≤ψ≤β≤σ≤90°.

4. The semiconductor laser chip according to claim 2, characterized in that: The photon energy absorption coefficient distribution of the waveguide layer (102) under the light field localization effect enhancement has a function y1=(a x +1) / (a x -1)(0<a<1) second quadrant curve distribution; the light hole effective mass distribution of the waveguide layer (102) under the enhanced light field local effect has a function y2=(b x +1) / (b x -1)(0<b<1) the second quadrant curve distribution; the hole mobility distribution of the waveguide layer (102) under the enhanced light field localization effect has a function y3=(c x +1) / (c x -1)(c>1) third quadrant curve distribution; the saturated electron drift rate distribution of the waveguide layer (102) under the enhanced light field localization effect has a function y4=(d x +1) / (d x -1)(d>1) third quadrant curve distribution.

5. The semiconductor laser chip according to claim 4, characterized in that: The photon energy absorption coefficient distribution, light hole effective mass distribution, hole mobility distribution, and saturated electron drift rate distribution of the light field localization effect enhanced lower waveguide layer (102) have the following relationship: 0<b≤a<1<d≤c.

6. The semiconductor laser chip according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

7. The semiconductor laser chip according to claim 1, characterized in that: The lower cladding layer (101), the lower waveguide layer (102), the first upper cladding layer (105), the electron blocking layer (106), and the second upper cladding layer (107) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

8. The semiconductor laser chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x Composite substrate, sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and a LiAlO2 / LiGaO2 composite substrate.

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