Plasma gas-liquid discharge device and device control method

Abstract

The invention relates to the technical field of plasmas, and discloses a plasma gas-liquid discharge device and a device control method, the discharge device comprises a high-voltage electrode, a low-voltage electrode and an insulating substrate; wherein the first surface of the insulating substrate is provided with a plurality of groove-type channels, and the depth of each groove-type channel is in a micron order; the high-voltage electrode and the low-voltage electrode are used for forming an electric field, and the groove-type channels are located in the electric field. Therefore, the to-be-treated liquid with the micron-scale depth is provided through the groove type channel with the micron-scale depth, so that the acting area of the plasma can cover the liquid in the groove type channel, and the good treatment effect on the liquid flowing in the groove type channel is achieved; therefore, the treatment effect of the plasma on the gas-liquid two-phase medium can be comprehensively improved.

Description

Technical Field

[0001] The present invention relates to the field of plasma technology, and in particular to a plasma gas-liquid discharge device and a device control method. Background Art

[0002] Low-temperature plasma technology has been widely studied in material modification, pollution control and medical disinfection due to its advantages such as high reaction rate, high reaction activity and convenient regulation.

[0003] In a gas dielectric discharge environment with good insulating properties, when the external driving energy reaches the energy threshold of the excitation ionization of the gas molecules, it can induce a series of excitation ionization of the gas molecules to produce plasma. However, in a liquid dielectric discharge environment, since the liquid medium is usually non-insulating, under the action of an external electric field, the ions inside the liquid often undergo charge rearrangement rather than generate plasma. Therefore, the gas-liquid discharge process usually occurs in the gas phase and the gas-liquid two-phase interface, so that the plasma action area is mainly concentrated on the surface of the liquid, and cannot effectively cover the interior of the liquid, resulting in poor liquid treatment effect. The current method of increasing the plasma action area inside the liquid is mainly to increase the gas-liquid two-phase area by bubbling into the liquid, and then establish a plasma reaction zone in the liquid. However, the bubbles are randomly distributed and have a large degree of freedom of movement inside the liquid, which makes it difficult to control the plasma reaction zone inside the liquid. Summary of the invention

[0004] The purpose of the present invention is to overcome the problem in the prior art that the action area of ​​ions is mainly concentrated on the surface of the liquid and cannot effectively cover the interior of the liquid, resulting in poor liquid treatment effect, and to provide a plasma gas-liquid discharge device and a device control method.

[0005] In order to achieve the above-mentioned object, the present invention provides a plasma gas-liquid discharge device in a first aspect, wherein the discharge device comprises a high-voltage electrode, a low-voltage electrode and an insulating substrate;

[0006] Wherein, a plurality of slot-type channels are provided on the first surface of the insulating substrate, and the depth of each slot-type channel is in the micrometer level;

[0007] The high voltage electrode and the low voltage electrode are used to form an electric field, and each of the slot-type channels is located in the electric field.

[0008] In an embodiment of the present application, the high-voltage electrode is a linear high-voltage electrode, the low-voltage electrode is a linear low-voltage electrode, the linear high-voltage electrode and the linear low-voltage electrode are located in the same target plane; the target plane is parallel to the first surface.

[0009] In an embodiment of the present application, the high-voltage electrode is a linear high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The linear high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

[0010] In an embodiment of the present application, the high-voltage electrode is a plate-shaped high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The plate-shaped high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

[0011] In the embodiment of the present application, the slot-like channels are parallel to each other, and the direction of the electric field is perpendicular to the extension direction of each slot-like channel.

[0012] In an embodiment of the present application, the discharge device further comprises a hydrophobic breathable membrane, which is attached to the first surface to cover the plurality of slot-type channels; the surface of the hydrophobic breathable membrane facing the slot-type channels is hydrophobic, and the hydrophobic breathable membrane as a whole is breathable.

[0013] In the embodiment of the present application, the surface of the hydrophobic breathable membrane facing away from the trough channel is hydrophilic.

[0014] In the embodiment of the present application, the discharge device further includes a plurality of first valves, each of the first valves being correspondingly arranged on each of the slot-type channels.

[0015] In the embodiment of the present application, the distance between any two adjacent slot channels is in micrometer order.

[0016] In an embodiment of the present application, the discharge device further includes an airflow control device, which is located on one side of the first surface and is used to control the airflow direction in the gas phase discharge space, parallel to the extension direction of the slot-type channel.

[0017] The second aspect of the present invention provides a device control method for controlling the plasma gas-liquid discharge device provided in the first aspect of the present application, the control method comprising:

[0018] Determine the target reaction residence time corresponding to each of the slot-type channels;

[0019] Based on the target reaction residence time, the reaction residence time of the liquid in each of the trough channels is controlled.

[0020] In the embodiment of the present application, the step of determining the target reaction residence time corresponding to each of the slot-type channels includes:

[0021] Determining the reaction energy ratio of the plasma between the slot channels;

[0022] According to the reaction energy ratio, a first target slot channel, a second target slot channel and a third target slot channel are selected from each of the slot channels; wherein the first target slot channel is the slot channel with the highest plasma reaction energy among the slot channels, the second target slot channel is the slot channel with the lowest plasma reaction energy among the slot channels, and the plasma reaction energy of the third target slot channel is between the plasma concentration of the first target slot channel and the plasma reaction energy of the second target slot channel;

[0023] Passing a target solution into the first target trough channel, the second target trough channel, and the third target trough channel, and determining that when the treatment effect of the target solution reaches a preset effect, the first reaction residence time of the target solution in the first target trough channel, the second target trough channel, and the third target trough channel respectively corresponds to;

[0024] Based on the first reaction residence time and the relative position relationship between the second target trough type, the third target trough type channel and the first target trough type channel, a reaction residence time simulation curve is drawn;

[0025] According to the reaction residence time simulation curve and the relative position relationship between the slot-type channels, the target reaction residence time corresponding to each slot-type channel is determined.

[0026] In the embodiment of the present application, determining the reaction energy ratio of the plasma between the slot-type channels includes:

[0027] A color developing solution is introduced into each of the trough channels, and the color developing solution is taken out at the outlet of each of the trough channels, and a color reduction calibration is performed using a calibration solution;

[0028] The reaction energy ratio of the plasma between the slot-type channels is determined according to the consumption of the calibration liquid.

[0029] Through the above-mentioned plasma gas-liquid discharge device, the discharge device includes a high-voltage electrode, a low-voltage electrode and an insulating substrate; wherein, a plurality of slot channels are provided on the first surface of the insulating substrate, and the depth of each slot channel is in the micrometer level; the high-voltage electrode and the low-voltage electrode are used to form an electric field, and each slot channel is located in the electric field. Thus, the slot channel with a depth of micrometer level can provide a liquid to be treated with a depth of micrometer level, which corresponds to the depth of the liquid surface layer that can be covered by the plasma action area, so that the plasma action area can cover the liquid in the slot channel, and then the liquid flowing in the slot channel has a better treatment effect, thereby comprehensively improving the treatment effect of plasma on the gas-liquid two-phase medium.

[0030] Other features and advantages of the embodiments of the present application will be described in detail in the subsequent specific implementation section. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the following specific implementations, they are used to explain the embodiments of the present application, but do not constitute a limitation on the embodiments of the present application. In the accompanying drawings:

[0032] Figure 1 and Figure 2 A schematic diagram of the structure of a plasma gas-liquid discharge device according to an embodiment of the present application is shown;

[0033] Figure 3 A schematic diagram of the structure of another plasma gas-liquid discharge device according to an embodiment of the present application is shown;

[0034] Figure 4 A schematic diagram of the structure of another plasma gas-liquid discharge device according to an embodiment of the present application is shown;

[0035] Figure 5 A schematic diagram of the structure of another plasma gas-liquid discharge device according to an embodiment of the present application is shown;

[0036] Figure 6 A schematic diagram of a flow chart of a device control method according to an embodiment of the present application is shown;

[0037] Figure 7 A schematic diagram of a flow chart of another device control method according to an embodiment of the present application is shown;

[0038] Figure 8 A schematic diagram of a reaction residence time simulation curve according to an embodiment of the present application is schematically shown.

[0039] Description of Reference Numerals

[0040] 100—plasma gas-liquid discharge device; 101—high voltage electrode; 102—low voltage electrode; 103—insulating substrate; 1031—groove channel; 104—hydrophobic breathable membrane; 105—first valve. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the specific implementation methods described herein are only used to illustrate and explain the embodiments of the present application, and are not used to limit the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0042] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0043] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0044] As described in the background technology, for the liquid medium in the gas-liquid two-phase discharge, the discharge process usually occurs at the gas-liquid two-phase interface, that is, the liquid surface; the non-insulating nature of the liquid causes ion charge rearrangement to often occur inside the liquid, rather than generating plasma. Therefore, for the liquid medium, the plasma action area is mainly concentrated on the liquid surface, and cannot effectively cover the liquid interior, resulting in poor treatment of the liquid (such as pollutants in the liquid, etc.).

[0045] To this end, a plasma gas-liquid discharge device 100 is provided in one embodiment of the present application. The discharge device 100 may include a high-voltage electrode 101, a low-voltage electrode 102 and an insulating substrate 103; a first surface of the insulating substrate 103 is provided with a plurality of slot channels 1031, and a depth of each slot channel 1031 is in the micron level; the high-voltage electrode 101 and the low-voltage electrode 102 are used to form an electric field, and each slot channel 1031 is located in the electric field.

[0046] The high voltage electrode 101 and the low voltage electrode 102 can form a discharge space under the drive of an external power supply to form an electric field. Specifically, the high voltage electrode 101 can be connected to the high voltage terminal A, and the low voltage electrode 102 can be connected to the ground terminal B, so as to form a discharge circuit for discharge. The high voltage electrode 101 and the low voltage electrode 102 can be made of metal, such as copper, stainless steel, etc.

[0047] In practical applications, in order to achieve a better treatment effect of the subsequent plasma gas-liquid discharge device 100 on the liquid in the slot channels 1031 , the slot channels 1031 may be parallel to each other, and the direction of the electric field is perpendicular to the extension direction of each slot channel 1031 .

[0048] In the embodiment of the present application, in order to achieve a better discharge effect of the gas-liquid two-phase, the high-voltage electrode 101 can be arranged on one side of the first surface of the insulating substrate 103, and thus closer to the liquid in the trough channel 103. The low-voltage electrode 102 can be arranged on one side of the first surface of the insulating substrate 103, or on one side of the second surface of the insulating substrate 103, according to the electrode form, and the second surface is opposite to the first surface.

[0049] For example, in one embodiment, Figure 1 and Figure 2 As shown ( Figure 2 for Figure 1 ), the high voltage electrode 101 is a linear high voltage electrode, the low voltage electrode 102 is a linear low voltage electrode, the linear high voltage electrode and the linear low voltage electrode are located in the same target plane; the target plane is parallel to the first surface. More specifically, the extension direction of the linear high voltage electrode is the same as the extension direction of the slot-type channel 1031, and the extension direction of the linear low voltage electrode is the same as the extension direction of the slot-type channel 1031.

[0050] In a specific implementation, the linear high voltage electrode and the linear low voltage electrode are spaced apart by a first preset distance to form a discharge space. The first preset distance can be set according to actual needs, for example, 10 mm, 20 mm, 30 mm, etc.

[0051] In the above embodiment, a linear high-voltage electrode and a linear low-voltage electrode can constitute a set of electrodes. In practical applications, the plasma gas-liquid discharge device 100 can be provided with only one set of electrodes or multiple sets of electrodes, so that when there are a large number of slot channels 1031, each slot channel 1031 can be covered by the electric field.

[0052] When multiple groups of electrodes are arranged in the plasma gas-liquid discharge device 100, the arrangement order of the electrodes is: high voltage electrode 101, low voltage electrode 102, high voltage electrode 101, low voltage electrode 102... Among them, an electric field can be formed not only between the high voltage electrode 101 and the low voltage electrode 102 in the same group of electrodes, but also between the low voltage electrode 102 in the previous group of electrodes and the high voltage electrode 101 in the next group of electrodes. Thus, each slot channel 1031 can be covered by the electric field.

[0053] Or for example, in another embodiment, Figure 3 As shown, the high voltage electrode 101 is a linear high voltage electrode, and the low voltage electrode 102 is a plate-like low voltage electrode. The linear high voltage electrode is located on one side of the first surface, and the plate-like low voltage electrode is located on one side of the second surface of the insulating substrate 103 .

[0054] In a specific implementation, the linear high voltage electrode and the plate-shaped low voltage electrode are spaced apart by a second preset distance to form a discharge space. The second preset distance can be set according to actual needs, for example, 5 mm, 10 mm, etc.

[0055] Or for example, in yet another embodiment, Figure 4 As shown, the high voltage electrode 101 is a plate-shaped high voltage electrode, the low voltage electrode 102 is a plate-shaped low voltage electrode, the plate-shaped high voltage electrode is located on one side of the first surface, and the plate-shaped low voltage electrode is located on one side of the second surface of the insulating substrate 103 .

[0056] In a specific implementation, the plate-shaped high voltage electrode and the plate-shaped low voltage electrode are spaced apart by a third preset distance to form a discharge space. The third preset distance can be set according to actual needs, for example, 5 mm, 10 mm, etc.

[0057] The insulating substrate 103 can be used to form each slot channel 1031. The cross-section of the slot channel 1031 can include but is not limited to a square, a circle, etc. For example, the cross-section of the slot channel 1031 can be a square of 100 μm×100 μm. The insulating substrate 103 can be made of a material with good insulation performance, such as quartz, ceramic, polydimethylsiloxane, etc.

[0058] Each slot-type channel 1031 opened on the insulating substrate 103 can be used to carry and circulate liquid. Each slot-type channel 1031 has an upward opening, so that the liquid flowing therein can be exposed to the gas phase, thereby forming a gas-liquid two-phase discharge environment.

[0059] In the embodiment of the present application, by setting the depth of each slot channel 1031 to be micron-level, the depth of the liquid flowing in the slot channel 1031 is also micron-level, that is, the depth of the liquid to be treated is micron-level. In other words, the slot channel 1031 with a depth of micron-level can be used to provide liquid to be treated with a depth of micron-level. The depth of the slot channel 1031 can be, for example, 10 μm to 500 μm.

[0060] As described in the background of the present application, for the liquid medium in the gas-liquid two-phase discharge, the discharge process usually occurs on the liquid surface, and the plasma action area can only cover the liquid surface layer. However, by setting the groove channel 1031 with a depth of micrometer level, the depth of the liquid to be treated is also micrometer level, which is close to the depth of the liquid surface layer. Therefore, the plasma action area can cover the liquid in the groove channel 1031.

[0061] In other words, in the prior art, the interior of the liquid (or the deep layer of the water body) is too far away from the surface of the liquid, so that the action area of ​​the plasma cannot cover the interior of the liquid, resulting in poor treatment effect on the interior of the liquid. For example, if the object to be treated is sewage, then only the pollutants on the surface of the water body can be effectively treated, and the pollutants inside the water body cannot be effectively treated, which leads to poor treatment effect of the liquid. However, the liquid in the slot channel 1031 in the embodiment of the present application, because the depth is only micron level, makes the liquid in the channel close to the surface of the liquid or located in the surface of the liquid, and there is no liquid in the channel that is too far away from the surface of the liquid. Therefore, the action area of ​​the plasma can cover the liquid in the slot channel 1031, and then the liquid circulating in the slot channel 1031 has a better treatment effect.

[0062] In a specific implementation, liquid can be introduced into each trough channel 1031 from the first main line C, and the liquid in each trough channel 1031 flows out and converges into the second main line D. Each trough channel 1031, the first main line C, the second main line D, and other pipelines E for distributing liquid to each trough channel 1031 can be as follows: Figure 5 Shown (top view).

[0063] In each slot channel 1031, the distance between any two adjacent slot channels 1031 may also be micrometer-level, for example, 0 μm to 30 μm, thereby increasing the density of the slot channels 1031, improving the utilization rate of plasma, and further improving the processing efficiency of the liquid.

[0064] When the plasma gas-liquid discharge device 100 is actually used, each slot channel 1031 can be used to circulate the liquid to be treated, such as sewage, etc. The liquid to be treated contains substances that can consume plasma, such as pollutants in sewage.

[0065] It can be understood that the plasma gas-liquid discharge device 100 provided in the embodiment of the present application includes a high-voltage electrode 101, a low-voltage electrode 102 and an insulating substrate; a plurality of slot channels 1031 are provided on the first surface of the insulating substrate 103, and the depth of each slot channel 1031 is in the micron level; the high-voltage electrode 101 and the low-voltage electrode 102 are used to form an electric field, and each slot channel 1031 is located in the electric field. Thus, the slot channel 1031 with a depth of microns can provide a liquid to be treated with a depth of microns, which corresponds to the depth of the liquid surface layer that can be covered by the plasma action area, so that the plasma action area can cover the liquid in the slot channel 1031, and then the liquid flowing in the slot channel 1031 has a good treatment effect, thereby improving the treatment effect of the liquid.

[0066] In practical applications, in order to prevent the liquid in the slot channel 1031 from overflowing and causing the liquid load in other slot channels 1031 to increase, thereby causing poor liquid treatment effects in other slot channels 1031, in one embodiment, the plasma gas-liquid discharge device 100 provided in the embodiment of the present application further includes a hydrophobic breathable membrane 104, such as Figure 1 and Figure 2 As shown, the hydrophobic breathable membrane 104 is attached to the first surface to cover each of the slot channels 1031 ; the surface of the hydrophobic breathable membrane 104 facing the slot channels 1031 is hydrophobic, and the hydrophobic breathable membrane 104 as a whole is breathable.

[0067] The surface of the hydrophobic breathable membrane 104 facing the slot-type channel 1031 is hydrophobic, which can prevent liquid from passing through to a certain extent, thereby preventing overflow in the slot-type channel 1031 .

[0068] The hydrophobic breathable membrane 104 is breathable as a whole, so that the gas can smoothly contact the liquid in the slot channel 1031, thereby smoothly performing gas-liquid two-phase discharge.

[0069] Furthermore, in order to prevent the overflow of liquid in the slot-type channel 1031 from causing an increase in the liquid load in other slot-type channels 1031 , the surface of the hydrophobic breathable membrane 104 facing away from the slot-type channel 1031 has hydrophilicity.

[0070] Therefore, when liquid passes through the hydrophobic breathable membrane 104 and escapes from the slot-type channel 1031, the surface of the hydrophobic breathable membrane 104 in contact with the escaped liquid is hydrophilic, so that the escaped liquid can return to the slot-type channel 1031. Thus, the escaped liquid can be prevented from flowing into other slot-type channels 1031 to a certain extent.

[0071] Considering the convenience of controlling the liquid flow in each slot channel 1031, in one embodiment, the plasma gas-liquid discharge device 100 provided in the embodiment of the present application further includes a plurality of first valves 105, such as Figure 5 As shown, each of the first valves 105 is correspondingly arranged on each of the slot-type channels 1031 .

[0072] The size of each first valve 105 may be in the micrometer level, so that the first valve 105 may be disposed on the slot channel 1031 to control the liquid flow in the slot channel 1031 .

[0073] In specific implementation, the portion of the slot channel 1031 near the inlet can be in a closed pipeline state, so that the first valve 105 is set on the closed pipeline. Correspondingly, the first main pipeline C and other distribution pipelines E for distributing liquid to each slot channel 1031 can also be closed pipelines.

[0074] In order to avoid the influence of airflow on the plasma concentration in the corresponding area above each slot channel 1031, in one embodiment, the plasma gas-liquid discharge device 100 provided in the embodiment of the present application also includes an airflow control device (not shown in the figure), which is located on one side of the first surface, and the airflow control device is used to control the airflow direction in the gas phase discharge space, which is parallel to the extension direction of the slot channel 1031.

[0075] The airflow control device can be used to control the direction of the airflow in the gas phase discharge space, and can also be used to provide gas.

[0076] In the embodiment of the present application, the airflow direction in the gas phase discharge space is controlled to be parallel to the extension direction of the slot-type channel 1031 by the airflow control device, so that the plasma generated in the corresponding area above the slot-type channel 1031 can be prevented from moving to the corresponding area above other slot-type channels 1031. Thus, the plasma reaction energy in the corresponding area above each slot-type channel 1031 can be in a relatively stable state, and then the plasma reaction energy in the liquid in each slot-type channel 1031 can be in a relatively stable state. Therefore, when the plasma gas-liquid discharge device 100 is controlled by the device control method described later, the treatment effect on the liquid can be improved.

[0077] Based on the plasma gas-liquid discharge device provided in the above embodiment of the present application, the embodiment of the present application also provides a device control method, which can be used to control the plasma gas-liquid discharge device in the above embodiment. Figure 6 As shown, the control method may include the following steps:

[0078] Step 201, determining the target reaction residence time corresponding to each slot channel.

[0079] In specific implementation, the electric field between the high-voltage electrode and the low-voltage electrode can be adjusted to a certain intensity so that the electric field can stimulate the gas molecules in the discharge space to undergo an ionization process (the intensity of ionization during the discharge process can be monitored by parameters such as voltage and current). After stable discharge is achieved, the target reaction residence time corresponding to each slot channel is determined.

[0080] The target reaction residence time corresponding to each slot channel can be understood as the residence time of the liquid in each slot channel, that is, the time required for the liquid to pass through the slot channel.

[0081] For any slot channel, its corresponding target reaction residence time matches the plasma reaction energy in the slot channel. In other words, the liquid reaction residence time in the slot channel (i.e., residence time, the time required for the liquid to pass through the slot channel) is set to its corresponding target reaction residence time, so that the reaction energy of the plasma in the slot channel just matches the amount of the substance to be treated in the liquid passing through the target reaction residence time in the channel. Furthermore, there will be no situation where the liquid reaction residence time is too short, resulting in poor treatment effect, or the liquid reaction residence time is too long, resulting in plasma waste and low liquid treatment efficiency.

[0082] In the embodiment of the present application, the target reaction residence time corresponding to each of the slot channels is determined, such as Figure 7 As shown, it may include:

[0083] Step 2011, determining the reaction energy ratio of the plasma between the slot channels.

[0084] Among them, the reaction energy ratio of the plasma between each slot channel can be recorded as n1:n2:n3:n4:n5......

[0085] In a specific implementation, determining the reaction energy ratio of the plasma between each of the slot channels may include: introducing a color developing solution into each of the slot channels, taking the color developing solution at the outlet of each of the slot channels, and performing color reduction calibration using a calibration solution; and determining the reaction energy ratio of the plasma between each of the slot channels based on the consumption of the calibration solution.

[0086] In the above embodiment, the color developing solution contains a substance that can react with plasma, and the color of the color developing solution changes after reacting with plasma. After the color developing solution reacts with plasma, a reaction product is generated, and the calibration substance in the calibration solution can react with the reaction product. Therefore, the reaction energy ratio of the plasma between the slot-type channels can be determined according to the consumption of the calibration substance in the calibration solution.

[0087] Wherein, the color developing solution may be, for example, a potassium iodide solution, and the calibration solution may be, for example, a sodium thiosulfate solution. Potassium iodide solution is a colorless transparent solution. When potassium iodide reacts with plasma, iodine is generated and the color developing solution develops color. When sodium thiosulfate solution is used for calibration, sodium thiosulfate can react with iodine, so that the consumption of sodium thiosulfate corresponds to the amount of plasma consumed by potassium iodide in the color developing solution, and the reaction energy ratio of the plasma between the slot channels can be determined.

[0088] Generally speaking, the plasma content is higher in the area closer to the electrode, so the liquid in the slot channel closer to the electrode will show greater plasma reaction energy, and the color of the color-developing liquid in the slot channel closer to the electrode will be more obvious. If in actual applications, the color of the color-developing liquid in each slot channel is not obvious, especially the color of the color-developing liquid in the slot channel close to the electrode is not obvious; it means that the electrode may be far away from the insulating substrate, resulting in most plasma unable to enter the liquid in the slot channel, resulting in low plasma utilization. At this time, the distance between the electrode and the insulating substrate can be reduced until each slot channel has a more obvious color, especially the slot channel close to the electrode.

[0089] Step 2012: selecting a first target trough channel, a second target trough channel, and a third target trough channel from each of the trough channels according to the reaction energy ratio.

[0090] Among them, the first target slot channel is the slot channel with the highest plasma reaction energy among the slot channels, the second target slot channel is the slot channel with the lowest plasma reaction energy among the slot channels, and the plasma reaction energy of the third target slot channel is between the plasma reaction energy of the first target slot channel and the plasma reaction energy of the second target slot channel.

[0091] Specifically, a first target slot channel, a second target slot channel, and a plurality of third target slot channels can be determined according to the reaction energy ratio n1:n2:n3:n4:n5... of the plasma between the slot channels. In order to make the subsequent reaction residence time simulation curve more accurate, the number of the third target slot channels is preferably multiple, such as 3, 4, 5, etc.

[0092] Step 2013, introducing the target solution into the first target trough channel, the second target trough channel and the third target trough channel, and determining the first reaction residence time corresponding to the first target trough channel, the second target trough channel and the third target trough channel respectively when the treatment effect of the target solution reaches a preset effect.

[0093] The target solution may be a liquid to be treated by the plasma gas-liquid discharge device, such as ammonium sulfite solution, calcium sulfite solution, azo dye (AO7) solution or other pollutant solution, etc. The first target trough channel, the second target trough channel and the third target trough channel are fed with the same target solution and have the same concentration.

[0094] Based on Q=V / t (where Q is the flow rate, V is the volume of the slot channel, and t is the length of time the liquid stays in the slot channel, i.e., the length of time it passes through the channel), the length of time the liquid stays in the channel can be controlled by controlling the flow rate of the liquid in the slot channel.

[0095] Taking the first target trough channel as an example, under a constant external voltage, the residence time of the target solution in the channel is controlled by controlling the flow rate of the target solution in the first target trough channel. At the same time, the solution at the outlet of the first target trough channel is monitored to monitor the residual concentration of the substance to be treated (such as pollutants) in the solution.

[0096] Record the treatment effect of the target solution corresponding to different residence times. The treatment effect can be characterized by the residual concentration of the substance to be treated in the solution. As the residence time continues to increase, the reaction degree of the target solution gradually deepens, and the deepening trend gradually slows down with the increase in residence time. The treatment effect of the target solution also tends to be optimal and eventually reaches a plateau. The preset effect can correspond to the plateau, and accordingly, the residual concentration of the substance to be treated in the solution at the outlet of the first target trough channel is the concentration corresponding to the plateau. The treatment effect trend of the target solution in the first target trough channel can be as follows: Figure 8 shown.

[0097] The first reaction residence time corresponding to the first target trough channel may be the time corresponding to when the treatment effect of the target solution initially reaches a plateau. Figure 8 In the figure, the first reaction residence time is the time corresponding to the black dot block in the treatment effect trend line of the first target slot channel.

[0098] The determination process of the first reaction residence time corresponding to the second target trough channel and the determination process of the first reaction residence time corresponding to the third target trough channel can refer to the determination process of the first reaction residence time of the first target trough channel, which will not be repeated here. Among them, the treatment effect trend of the target solution in the second target trough channel and the treatment effect trend of the target solution in the third target trough channel can be as follows: Figure 8 As shown. Figure 8In the figure, the first reaction dwell time corresponding to the second target slot channel may be the time corresponding to the black dot block in the treatment effect trend line of the second target slot channel. The first reaction dwell time corresponding to the third target slot channel may be the time corresponding to the black dot block in the treatment effect trend line of the third target slot channel.

[0099] The first reaction residence times corresponding to the first target trough channel, the second target trough channel and the third target trough channel respectively are the target reaction residence times corresponding to the first target trough channel, the second target trough channel and the third target trough channel respectively.

[0100] Step 2014: draw a reaction residence time simulation curve based on the first reaction residence time and the relative position relationship between the second target trough type, the third target trough type channel and the first target trough type channel.

[0101] In specific implementation, the position of the first target trough channel can be recorded as the starting point, that is, the distance is 0. In the embodiment of the present application, the relative position relationship between the second target trough channel, the third target trough channel and the first target trough channel can refer to the distance between the second target trough channel and the first target trough channel, and the distance between the third target trough channel and the first target trough channel.

[0102] Furthermore, based on the first reaction residence time corresponding to the first target trough channel, the second target trough channel and the third target trough channel, respectively, the distance between the second target trough channel and the first target trough channel, and the distance between the third target trough channel and the first target trough channel, a relationship curve between the target reaction residence time and the relative position of the trough channel can be drawn, and the curve can be simulated to obtain a reaction residence time simulation curve, which can be shown as follows: Figure 8 The general formula of the reaction residence time simulation curve is: D(t) = a*t 2 +b*t+D0, where t is the target reaction residence time, D(t) is the distance between each trough channel and the first target trough channel, and the specific values ​​of a, b and D0 are obtained after simulation.

[0103] Step 2015, determining the target reaction residence time corresponding to each of the slot-type channels according to the reaction residence time simulation curve and the relative position relationship between the slot-type channels.

[0104] Generally speaking, the distance between each slot channel and the first target slot channel is known, and then the target reaction residence time corresponding to each slot channel can be determined according to the above reaction residence time simulation curve.

[0105] Step 202: Based on the target reaction residence time, the reaction residence time of the liquid in each of the trough channels is controlled.

[0106] That is, the reaction residence time of the liquid in each slot channel (ie, the time required for the liquid to pass through the slot channel) can be controlled to be the target reaction residence time corresponding to each slot channel.

[0107] In a specific implementation, the reaction residence time of the liquid in each slot channel can be controlled by controlling the first valve and controlling the flow rate.

[0108] To facilitate the description of the effects of the plasma gas-liquid discharge device and the device control method provided in the embodiments of the present application, the following will be described in combination with specific embodiments and comparative examples.

[0109] In the following embodiments and comparative examples, linear high-voltage electrodes and linear low-voltage electrodes are used, and the spacing between the two is 5 mm. The arrangement positions of the linear high-voltage electrodes and the linear low-voltage electrodes can refer to the above content and will not be repeated here. 40 mutually parallel slot channels are provided on the insulating substrate, which are marked as No. 1, No. 2, No. 3, No. 4, No. 5... No. 40 in order of arrangement. The cross-section of each slot channel is a square of 100μm×100μm, and the spacing between any two adjacent slot channels is 20μm.

[0110] Under the discharge condition of an applied voltage of 18 kV, potassium iodide colorimetric solution was introduced into each slot channel, and the residence time of the potassium iodide colorimetric solution in the channel was controlled to be 4 minutes. The colorimetric solution was taken at the outlet of each slot channel and calibrated with sodium thiosulfate calibration solution. After calculation, the ratio of calibration liquid consumed for calibration of the colorimetric liquid sampled from the outlet of each trough channel in the order of arrangement is 0.97: 0.99: 1: 0.99: 0.99: 0.97: 0.93: 0.88: 0.86: 0.85: 0.81: 0.72: 0.68: 0.65: 0.63: 0.57: 0.5: 0.46: 0.4: 0.3: 0.32: 0.4: 0.47: 0.53: 0.59: 0.63: 0.68: 0.71: 0.75: 0.79: 0.83: 0.85: 0.88: 0.93: 0.97: 0.98: 0.99: 1.1: 0.98: 0.95. According to the calibration liquid consumption ratio, a slot channel with the largest calibration liquid consumption is determined as the first target slot channel, a slot channel with the smallest calibration liquid consumption is determined as the second target slot channel, and four third target slot channels are determined, and the calibration liquid consumption of the four third target slot channels is between the first target slot channel and the second target slot channel.

[0111] Example 1

[0112] Under the discharge condition of an applied voltage of 18 kV, an ammonium sulfite solution is input into the first target trough channel. By controlling the flow rate of the ammonium sulfite solution in the first target trough channel, the reaction residence time of the ammonium sulfite solution in the channel is controlled to determine the target reaction residence time corresponding to the first target trough channel when the reaction tends to stabilize.

[0113] In the same manner, the target reaction residence time corresponding to the second target slot-type channel and the target reaction residence time corresponding to each of the four third target slot-type channels are obtained.

[0114] Based on the target reaction residence time corresponding to the first target trough channel, the second target trough channel and the four third target trough channels, the distance between the second target trough channel and the first target trough channel, and the distance between the four third target trough channels and the first target trough channel, a relationship curve between the target reaction residence time and the relative position of the trough channels is drawn, and the curve is simulated to obtain a reaction residence time simulation curve D(t)=134.5-39.4t+2.9t 2 .

[0115] Based on the above reaction residence time simulation curve, the target reaction residence time corresponding to other slot channels is determined, and the reaction residence time of the ammonium sulfite solution in each slot channel is controlled to be the corresponding target reaction residence time.

[0116] After calculation, after the above control is performed on the ammonium sulfite solution in each slot channel, the total flow rate of all slot channels is 17uL / min.

[0117] The second main pipe where the outflow of each trough channel converges was sampled to detect the concentration of ammonium sulfite in the treated liquid. According to calculation, the removal rate of ammonium sulfite was 86%.

[0118] Example 2

[0119] Under the discharge condition of an applied voltage of 20 kV, a calcium sulfite solution is input into the first target trough channel. By controlling the flow rate of the calcium sulfite solution in the first target trough channel, the reaction residence time of the calcium sulfite solution in the channel is controlled to determine the target reaction residence time corresponding to the first target trough channel when the reaction tends to stabilize.

[0120] In the same manner, the target reaction residence time corresponding to the second target slot-type channel and the target reaction residence time corresponding to each of the four third target slot-type channels are obtained.

[0121] Based on the target reaction residence time corresponding to the first target trough channel, the second target trough channel and the four third target trough channels, the distance between the second target trough channel and the first target trough channel, and the distance between the four third target trough channels and the first target trough channel, a relationship curve between the target reaction residence time and the relative position of the trough channels is drawn, and the curve is simulated to obtain a reaction residence time simulation curve D(t)=142.7-43.6t+3.8t 2 .

[0122] Based on the above reaction residence time simulation curve, the target reaction residence time corresponding to other slot channels is determined, and the reaction residence time of the calcium sulfite solution in each slot channel is controlled to be the corresponding target reaction residence time.

[0123] After calculation, after the above control is performed on the calcium sulfite solution in each slot channel, the total flow rate of all slot channels is 18.7uL / min.

[0124] Samples were taken from the second main pipe where the outflow from each trough channel converged to detect the concentration of calcium sulfite in the treated liquid. According to calculation, the removal rate of calcium sulfite was 81%.

[0125] Example 3

[0126] Under the discharge condition of an applied voltage of 20 kV, AO7 solution is input into the first target trough channel. By controlling the flow rate of AO7 solution in the first target trough channel, the reaction residence time of AO7 solution in the channel is controlled to determine the target reaction residence time corresponding to the first target trough channel when the reaction tends to stabilize.

[0127] In the same manner, the target reaction residence time corresponding to the second target slot-type channel and the target reaction residence time corresponding to each of the four third target slot-type channels are obtained.

[0128] Based on the target reaction residence time corresponding to the first target trough channel, the second target trough channel and the four third target trough channels, the distance between the second target trough channel and the first target trough channel, and the distance between the four third target trough channels and the first target trough channel, a relationship curve between the target reaction residence time and the relative position of the trough channels is drawn, and the curve is simulated to obtain a reaction residence time simulation curve D(t)=128.3-30.1t+1.7t 2 .

[0129] Based on the above reaction residence time simulation curve, the target reaction residence time corresponding to other trough channels is determined, and the reaction residence time of the AO7 solution in each trough channel is controlled to be the corresponding target reaction residence time.

[0130] After calculation, after the above control of the AO7 solution in each slot channel, the total flow rate of all slot channels is 22.3uL / min.

[0131] The second main pipe where the outflow of each trough channel converges was sampled to detect the concentration of AO7 in the treated liquid. According to calculation, the removal rate of AO7 was 70%.

[0132] Comparative Example 1

[0133] Under the condition of an applied voltage of 18 kV, an ammonium sulfite solution was introduced into each trough channel, and the concentration was the same as that in Example 1. The flow rate of the ammonium sulfite solution in each trough channel was one fortieth of 17 uL / min.

[0134] The second main pipe where the outflow of each trough channel converges is sampled to detect the concentration of ammonium sulfite in the treated liquid. According to calculation, the removal rate of ammonium sulfite is 60%.

[0135] Comparative Example 2

[0136] Under the condition of an applied voltage of 20 kV, a calcium sulfite solution was introduced into each trough channel, and the concentration was the same as that in Example 2. The flow rate of the calcium sulfite solution in each trough channel was one fortieth of 18.7 uL / min.

[0137] The second main pipe where the outflow of each trough channel converges was sampled to detect the concentration of calcium sulfite in the treated liquid. According to calculation, the removal rate of calcium sulfite was 56%.

[0138] Comparative Example 3

[0139] Under the condition of an applied voltage of 20 kV, AO7 solution was introduced into each slot channel, and the concentration was the same as that in Example 3. The flow rate of AO7 solution in each slot channel was one fortieth of 22.3 uL / min.

[0140] The second main pipe where the outflow of each trough channel converges was sampled to detect the concentration of AO7 in the treated liquid. According to calculation, the removal rate of AO7 was 50%.

[0141] Based on the comparison results between Example 1 and Comparative Example 2, the comparison results between Example 2 and Comparative Example 2, and the comparison results between Example 3 and Comparative Example 3, it can be seen that the device control method provided in the embodiments of the present application can effectively improve the liquid treatment effect.

[0142] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0143] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A plasma gas-liquid discharge device, characterized in that: The discharge device comprises a high voltage electrode, a low voltage electrode and an insulating substrate; Wherein, a plurality of slot-type channels are provided on the first surface of the insulating substrate, and the depth of each slot-type channel is in the micrometer level; The high voltage electrode and the low voltage electrode are used to form an electric field, and each of the slot-type channels is located in the electric field.

2. The plasma gas-liquid discharge device according to claim 1, characterized in that: The high-voltage electrode is a linear high-voltage electrode, the low-voltage electrode is a linear low-voltage electrode, the linear high-voltage electrode and the linear low-voltage electrode are located in the same target plane; the target plane is parallel to the first surface.

3. The plasma gas-liquid discharge device according to claim 1, characterized in that: The high-voltage electrode is a linear high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The linear high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

4. The plasma gas-liquid discharge device according to claim 1, characterized in that: The high-voltage electrode is a plate-shaped high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The plate-shaped high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

5. The plasma gas-liquid discharge device according to any one of claims 1 to 4, characterized in that: The slot-type channels are parallel to each other, and the direction of the electric field is perpendicular to the extension direction of the slot-type channels.

6. The plasma gas-liquid discharge device according to claim 1, characterized in that: The discharge device further comprises a hydrophobic breathable membrane, which is attached to the first surface to cover the plurality of slot-type channels; the surface of the hydrophobic breathable membrane facing the slot-type channels is hydrophobic, and the hydrophobic breathable membrane as a whole is breathable.

7. The plasma gas-liquid discharge device according to claim 6, characterized in that: The surface of the hydrophobic breathable membrane facing away from the trough channel is hydrophilic.

8. The plasma gas-liquid discharge device according to claim 1, characterized in that: The discharge device further comprises a plurality of first valves, each of which is correspondingly arranged on each of the slot-type channels.

9. The plasma gas-liquid discharge device according to claim 1, characterized in that: The distance between any two adjacent slot channels is in the micron order.

10. The plasma gas-liquid discharge device according to claim 1, characterized in that: The discharge device further comprises an airflow control device, which is located on one side of the first surface and is used to control the airflow direction in the gas phase discharge space, parallel to the extension direction of the slot-type channel.

11. A device control method, characterized in that: The control method is used to control the plasma gas-liquid discharge device according to any one of claims 1 to 10, and the control method comprises: Determine the target reaction residence time corresponding to each of the slot-type channels; Based on the target reaction residence time, the reaction residence time of the liquid in each of the trough channels is controlled.

12. The device control method according to claim 11, characterized in that: Determining the target reaction residence time corresponding to each of the slot-type channels includes: Determining the reaction energy ratio of the plasma between the slot channels; According to the reaction energy ratio, a first target slot channel, a second target slot channel and a third target slot channel are selected from each of the slot channels; wherein the first target slot channel is the slot channel with the highest plasma reaction energy among the slot channels, the second target slot channel is the slot channel with the lowest plasma reaction energy among the slot channels, and the plasma reaction energy of the third target slot channel is between the plasma reaction energy of the first target slot channel and the plasma reaction energy of the second target slot channel; Passing a target solution into the first target trough channel, the second target trough channel, and the third target trough channel, and determining that when the treatment effect of the target solution reaches a preset effect, the first reaction residence time of the target solution in the first target trough channel, the second target trough channel, and the third target trough channel respectively corresponds to; Based on the first reaction residence time and the relative position relationship between the second target trough type, the third target trough type channel and the first target trough type channel, a reaction residence time simulation curve is drawn; According to the reaction residence time simulation curve and the relative position relationship between the slot-type channels, the target reaction residence time corresponding to each slot-type channel is determined.

13. The device control method according to claim 12, characterized in that: Determining the reaction energy ratio of the plasma between the slot channels comprises: A color developing solution is introduced into each of the trough channels, and the color developing solution is taken out at the outlet of each of the trough channels, and a color reduction calibration is performed using a calibration solution; The reaction energy ratio of the plasma between the slot-type channels is determined according to the consumption of the calibration liquid.

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